ES2074586T3 - Metodo de fabricar hilos cuanticos de silicio. - Google Patents

Metodo de fabricar hilos cuanticos de silicio.

Info

Publication number
ES2074586T3
ES2074586T3 ES90917418T ES90917418T ES2074586T3 ES 2074586 T3 ES2074586 T3 ES 2074586T3 ES 90917418 T ES90917418 T ES 90917418T ES 90917418 T ES90917418 T ES 90917418T ES 2074586 T3 ES2074586 T3 ES 2074586T3
Authority
ES
Spain
Prior art keywords
layer
wafer
silicon
hydrofluoric acid
level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES90917418T
Other languages
English (en)
Inventor
Leigh-Trevor Canham
John Michael Keen
Weng Yee Leong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Secretary of State for Defence
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=10667590&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ES2074586(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Application granted granted Critical
Publication of ES2074586T3 publication Critical patent/ES2074586T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • H01L33/346—Materials of the light emitting region containing only elements of Group IV of the Periodic Table containing porous silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/96—Porous semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Weting (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)

Abstract

UN METODO PARA LA FABRICACION DE CABLES CUANTICOS SEMICONDUCTORES EN QUE SU UTILIZA UN PLAQUITA SEMICONDUCTORA (14) COMO EL MATERIAL INICIAL. LA PLAQUITA (14) ES DEL TIPO P DEBILMENTE DOPADA CON UNA CAPA P DELGADA MUY DOPADA DENTRO PARA QUE LA CORRIENTE FLUYA DE MANERA UNIFORME. LA PLAQUITA (14) SE ANODIZA EN ACIDO FLUORHIDRICO ACUSOSO AL 20% PARA PRODUCIR UNA CAPA (5) GRUESA EN MICRAS CON UNA POROSIDAD DEL 70% Y BUENA CRISTALINIDAD. A CONTINUACION SE GRABA LA CAPA CON ACIDO FLUORHIDRICO CONCENTRADO, LO CUAL PROPORCIONA UNA VELOCIDAD DE ATAQUE LENTA. EL ATAQUE HACE QUE AUMENTE LA POROSIDAD A UN NIVEL DEL 80% EN LA REGION O SUPERIOR. A TAL NIVEL, LOS POROS SE SUPERPONEN Y SE ESPERA QUE SE FORMEN CABLES CUANTICOS AISLADOS CON DIAMETROS MENORES O IGUALES A 3 NM. LA CAPA GRABADA PRESENTA UNA EMISION FOTOLUMINISCENTE A ENERGIAS FOTONICAS MUY POR ENCIMA DEL HUECO DE BANDA DE SILICIO (1,1 EV) Y QUE SE EXTIENDE HASTA LA REGION ROJA (1,6 - 2,0 EV) DEL ESPECTRO VISIBLE.
ES90917418T 1989-12-07 1990-12-06 Metodo de fabricar hilos cuanticos de silicio. Expired - Lifetime ES2074586T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB898927709A GB8927709D0 (en) 1989-12-07 1989-12-07 Silicon quantum wires

Publications (1)

Publication Number Publication Date
ES2074586T3 true ES2074586T3 (es) 1995-09-16

Family

ID=10667590

Family Applications (1)

Application Number Title Priority Date Filing Date
ES90917418T Expired - Lifetime ES2074586T3 (es) 1989-12-07 1990-12-06 Metodo de fabricar hilos cuanticos de silicio.

Country Status (10)

Country Link
US (4) US5348618A (es)
EP (2) EP0504170B1 (es)
JP (2) JP2611072B2 (es)
AT (1) ATE125066T1 (es)
CA (1) CA2073030C (es)
DE (1) DE69020906T2 (es)
DK (1) DK0504170T3 (es)
ES (1) ES2074586T3 (es)
GB (3) GB8927709D0 (es)
WO (1) WO1991009420A1 (es)

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Also Published As

Publication number Publication date
GB2254188B (en) 1994-07-20
US6147359A (en) 2000-11-14
DE69020906D1 (de) 1995-08-17
DE69020906T2 (de) 1995-12-14
GB9304855D0 (en) 1993-04-28
CA2073030C (en) 1999-02-23
GB2254188C (en) 1994-12-23
JP2611072B2 (ja) 1997-05-21
ATE125066T1 (de) 1995-07-15
GB9209555D0 (en) 1992-07-01
EP0616378A2 (en) 1994-09-21
DK0504170T3 (da) 1995-09-04
EP0504170B1 (en) 1995-07-12
GB2266994A (en) 1993-11-17
JP2963617B2 (ja) 1999-10-18
WO1991009420A1 (en) 1991-06-27
GB2254188A (en) 1992-09-30
GB8927709D0 (en) 1990-02-07
US6369405B1 (en) 2002-04-09
US5348618A (en) 1994-09-20
GB2266994B (en) 1994-08-03
JPH0774392A (ja) 1995-03-17
EP0616378A3 (en) 1998-05-06
JPH05502978A (ja) 1993-05-20
EP0504170A1 (en) 1992-09-23
CA2073030A1 (en) 1991-06-08
US5358600A (en) 1994-10-25

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