ATE125066T1 - Herstellungsverfahren für einen quantumleiter. - Google Patents
Herstellungsverfahren für einen quantumleiter.Info
- Publication number
- ATE125066T1 ATE125066T1 AT90917418T AT90917418T ATE125066T1 AT E125066 T1 ATE125066 T1 AT E125066T1 AT 90917418 T AT90917418 T AT 90917418T AT 90917418 T AT90917418 T AT 90917418T AT E125066 T1 ATE125066 T1 AT E125066T1
- Authority
- AT
- Austria
- Prior art keywords
- layer
- wafer
- hydrofluoric acid
- level
- porosity
- Prior art date
Links
- 239000004020 conductor Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 title 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 238000005424 photoluminescence Methods 0.000 abstract 1
- 239000011148 porous material Substances 0.000 abstract 1
- 239000007858 starting material Substances 0.000 abstract 1
- 238000001429 visible spectrum Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
- H01L33/346—Materials of the light emitting region containing only elements of Group IV of the Periodic Table containing porous silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/96—Porous semiconductor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/962—Quantum dots and lines
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Weting (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Dc Machiner (AREA)
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
- Light Receiving Elements (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB898927709A GB8927709D0 (en) | 1989-12-07 | 1989-12-07 | Silicon quantum wires |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE125066T1 true ATE125066T1 (de) | 1995-07-15 |
Family
ID=10667590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT90917418T ATE125066T1 (de) | 1989-12-07 | 1990-12-06 | Herstellungsverfahren für einen quantumleiter. |
Country Status (10)
Country | Link |
---|---|
US (4) | US5348618A (de) |
EP (2) | EP0504170B1 (de) |
JP (2) | JP2611072B2 (de) |
AT (1) | ATE125066T1 (de) |
CA (1) | CA2073030C (de) |
DE (1) | DE69020906T2 (de) |
DK (1) | DK0504170T3 (de) |
ES (1) | ES2074586T3 (de) |
GB (3) | GB8927709D0 (de) |
WO (1) | WO1991009420A1 (de) |
Families Citing this family (79)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8927709D0 (en) * | 1989-12-07 | 1990-02-07 | Secretary Of The State For Def | Silicon quantum wires |
US5767020A (en) * | 1991-02-15 | 1998-06-16 | Canon Kabushiki Kaisha | Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution |
US6171512B1 (en) | 1991-02-15 | 2001-01-09 | Canon Kabushiki Kaisha | Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution |
GB9108176D0 (en) * | 1991-04-17 | 1991-06-05 | Secr Defence | Electroluminescent silicon device |
DE4126955C2 (de) * | 1991-08-14 | 1994-05-05 | Fraunhofer Ges Forschung | Verfahren zum Herstellen von elektrolumineszenten Siliziumstrukturen |
EP0534474B1 (de) * | 1991-09-27 | 2002-01-16 | Canon Kabushiki Kaisha | Verfahren zur Behandlung eines Substrats aus Silizium |
EP0536790B1 (de) * | 1991-10-11 | 2004-03-03 | Canon Kabushiki Kaisha | Verfahren zur Herstellung von Halbleiter-Produkten |
US5454915A (en) * | 1992-10-06 | 1995-10-03 | Kulite Semiconductor Products, Inc. | Method of fabricating porous silicon carbide (SiC) |
US5689603A (en) * | 1993-07-07 | 1997-11-18 | Huth; Gerald C. | Optically interactive nanostructure |
US6734451B2 (en) | 1993-11-02 | 2004-05-11 | Matsushita Electric Industrial Co., Ltd. | Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same |
DE69434745T2 (de) * | 1993-11-02 | 2006-10-05 | Matsushita Electric Industrial Co., Ltd., Kadoma | Verfahren zur Herstellung eines Aggregats von Mikro-Nadeln aus Halbleitermaterial und Verfahren zur Herstellung eines Halbleiterbauelements mit einem solchen Aggregat |
CN1142875A (zh) * | 1993-12-06 | 1997-02-12 | 英国国防部 | 多孔半导体材料 |
GB2299210B (en) * | 1993-12-06 | 1997-12-24 | Secr Defence | Porous semiconductor material |
US5510633A (en) * | 1994-06-08 | 1996-04-23 | Xerox Corporation | Porous silicon light emitting diode arrays and method of fabrication |
US5427648A (en) * | 1994-08-15 | 1995-06-27 | The United States Of America As Represented By The Secretary Of The Army | Method of forming porous silicon |
AU3894595A (en) * | 1994-11-08 | 1996-05-31 | Spectra Science Corporation | Semiconductor nanocrystal display materials and display apparatus employing same |
GB2299204A (en) * | 1995-03-20 | 1996-09-25 | Secr Defence | Electroluminescent device |
GB2313479B (en) * | 1995-03-20 | 1999-10-20 | Secr Defence | Electroluminescent device comprising porous silicon |
GB9611437D0 (en) * | 1995-08-03 | 1996-08-07 | Secr Defence | Biomaterial |
US5690807A (en) * | 1995-08-03 | 1997-11-25 | Massachusetts Institute Of Technology | Method for producing semiconductor particles |
WO1997049132A1 (en) * | 1996-06-20 | 1997-12-24 | Jeffrey Frey | Light-emitting semiconductor device |
US6074546A (en) * | 1997-08-21 | 2000-06-13 | Rodel Holdings, Inc. | Method for photoelectrochemical polishing of silicon wafers |
JP3490903B2 (ja) * | 1997-09-11 | 2004-01-26 | Kddi株式会社 | 半導体発光素子およびその製造方法 |
JPH11243076A (ja) * | 1998-02-26 | 1999-09-07 | Canon Inc | 陽極化成方法及び陽極化成装置並びに半導体基板の製造方法 |
GB9808052D0 (en) | 1998-04-17 | 1998-06-17 | Secr Defence | Implants for administering substances and methods of producing implants |
GB9815819D0 (en) * | 1998-07-22 | 1998-09-16 | Secr Defence | Transferring materials into cells and a microneedle array |
US6197654B1 (en) * | 1998-08-21 | 2001-03-06 | Texas Instruments Incorporated | Lightly positively doped silicon wafer anodization process |
US6417069B1 (en) * | 1999-03-25 | 2002-07-09 | Canon Kabushiki Kaisha | Substrate processing method and manufacturing method, and anodizing apparatus |
CA2375138A1 (en) * | 1999-06-03 | 2000-12-14 | The Penn State Research Foundation | Deposited thin film void-column network materials |
GB9929521D0 (en) | 1999-12-15 | 2000-02-09 | Secr Defence | Bonded products and methods of fabrication therefor |
GB0008494D0 (en) | 2000-04-07 | 2000-05-24 | Secr Defence | Microprojectile delivery system |
US6794265B2 (en) * | 2001-08-02 | 2004-09-21 | Ultradots, Inc. | Methods of forming quantum dots of Group IV semiconductor materials |
US20030066998A1 (en) * | 2001-08-02 | 2003-04-10 | Lee Howard Wing Hoon | Quantum dots of Group IV semiconductor materials |
US6819845B2 (en) * | 2001-08-02 | 2004-11-16 | Ultradots, Inc. | Optical devices with engineered nonlinear nanocomposite materials |
US6710366B1 (en) | 2001-08-02 | 2004-03-23 | Ultradots, Inc. | Nanocomposite materials with engineered properties |
GB0120202D0 (en) | 2001-08-18 | 2001-10-10 | Psimedica | Body fluid collection and analysis |
JP2003124574A (ja) * | 2001-10-09 | 2003-04-25 | Fujitsu Ltd | 光半導体装置及びその製造方法 |
GB0130608D0 (en) | 2001-12-21 | 2002-02-06 | Psimedica Ltd | Medical fibres and fabrics |
AU2003206031A1 (en) * | 2002-03-08 | 2003-09-22 | Koninklijke Philips Electronics N.V. | Method of manufacturing nanowires and an electronic device |
US6955745B1 (en) * | 2002-08-01 | 2005-10-18 | University Of Florida Research Foundation, Inc. | Method of spark-processing silicon and resulting materials |
CA2408483C (en) * | 2002-10-17 | 2011-01-04 | Yujie Han | Laser chemical fabrication of nanostructures |
US7357877B2 (en) * | 2002-11-18 | 2008-04-15 | Koninklijke Philips Electronics N.V. | Dispersion of nanowires of semiconductor material |
JP2004335662A (ja) * | 2003-05-06 | 2004-11-25 | Canon Inc | 部材及び部材の製造方法 |
US8399331B2 (en) | 2007-10-06 | 2013-03-19 | Solexel | Laser processing for high-efficiency thin crystalline silicon solar cell fabrication |
US8420435B2 (en) * | 2009-05-05 | 2013-04-16 | Solexel, Inc. | Ion implantation fabrication process for thin-film crystalline silicon solar cells |
US9508886B2 (en) | 2007-10-06 | 2016-11-29 | Solexel, Inc. | Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam |
JP2010505728A (ja) * | 2006-10-05 | 2010-02-25 | 日立化成工業株式会社 | 高配列、高アスペクト比、高密度のシリコンナノワイヤー及びその製造方法 |
US8193076B2 (en) | 2006-10-09 | 2012-06-05 | Solexel, Inc. | Method for releasing a thin semiconductor substrate from a reusable template |
US8084684B2 (en) | 2006-10-09 | 2011-12-27 | Solexel, Inc. | Three-dimensional thin-film solar cells |
US8053665B2 (en) * | 2008-11-26 | 2011-11-08 | Solexel, Inc. | Truncated pyramid structures for see-through solar cells |
US8512581B2 (en) * | 2006-10-09 | 2013-08-20 | Solexel, Inc. | Methods for liquid transfer coating of three-dimensional substrates |
US7999174B2 (en) * | 2006-10-09 | 2011-08-16 | Solexel, Inc. | Solar module structures and assembly methods for three-dimensional thin-film solar cells |
US8035028B2 (en) * | 2006-10-09 | 2011-10-11 | Solexel, Inc. | Pyramidal three-dimensional thin-film solar cells |
US20080264477A1 (en) * | 2006-10-09 | 2008-10-30 | Soltaix, Inc. | Methods for manufacturing three-dimensional thin-film solar cells |
US8293558B2 (en) * | 2006-10-09 | 2012-10-23 | Solexel, Inc. | Method for releasing a thin-film substrate |
US20100304521A1 (en) * | 2006-10-09 | 2010-12-02 | Solexel, Inc. | Shadow Mask Methods For Manufacturing Three-Dimensional Thin-Film Solar Cells |
US20100144080A1 (en) * | 2008-06-02 | 2010-06-10 | Solexel, Inc. | Method and apparatus to transfer coat uneven surface |
WO2010057060A2 (en) | 2008-11-13 | 2010-05-20 | Solexel, Inc. | Methods and systems for manufacturing thin-film solar cells |
US8288195B2 (en) * | 2008-11-13 | 2012-10-16 | Solexel, Inc. | Method for fabricating a three-dimensional thin-film semiconductor substrate from a template |
US9890465B2 (en) * | 2009-01-15 | 2018-02-13 | Trutag Technologies, Inc. | Apparatus and methods for uniformly forming porous semiconductor on a substrate |
WO2010083422A1 (en) * | 2009-01-15 | 2010-07-22 | Solexel, Inc. | Porous silicon electro-etching system and method |
US8906218B2 (en) * | 2010-05-05 | 2014-12-09 | Solexel, Inc. | Apparatus and methods for uniformly forming porous semiconductor on a substrate |
US9076642B2 (en) | 2009-01-15 | 2015-07-07 | Solexel, Inc. | High-Throughput batch porous silicon manufacturing equipment design and processing methods |
MY162405A (en) * | 2009-02-06 | 2017-06-15 | Solexel Inc | Trench Formation Method For Releasing A Thin-Film Substrate From A Reusable Semiconductor Template |
US8828517B2 (en) | 2009-03-23 | 2014-09-09 | Solexel, Inc. | Structure and method for improving solar cell efficiency and mechanical strength |
US8656860B2 (en) * | 2009-04-14 | 2014-02-25 | Solexel, Inc. | High efficiency epitaxial chemical vapor deposition (CVD) reactor |
US9099584B2 (en) * | 2009-04-24 | 2015-08-04 | Solexel, Inc. | Integrated three-dimensional and planar metallization structure for thin film solar cells |
EP2427914A4 (de) | 2009-05-05 | 2013-06-05 | Solexel Inc | Hochproduktionsanlage zur herstellung poröser halbleiter |
US9318644B2 (en) | 2009-05-05 | 2016-04-19 | Solexel, Inc. | Ion implantation and annealing for thin film crystalline solar cells |
US8445314B2 (en) * | 2009-05-22 | 2013-05-21 | Solexel, Inc. | Method of creating reusable template for detachable thin film substrate |
US8551866B2 (en) * | 2009-05-29 | 2013-10-08 | Solexel, Inc. | Three-dimensional thin-film semiconductor substrate with through-holes and methods of manufacturing |
US8962380B2 (en) | 2009-12-09 | 2015-02-24 | Solexel, Inc. | High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using thin planar semiconductor absorbers |
CN102844883B (zh) | 2010-02-12 | 2016-01-20 | 速力斯公司 | 用于制造光电池和微电子器件的半导体衬底的双面可重复使用的模板 |
KR20130051013A (ko) | 2010-06-09 | 2013-05-16 | 솔렉셀, 인크. | 고생산성 박막 증착 방법 및 시스템 |
US8946547B2 (en) | 2010-08-05 | 2015-02-03 | Solexel, Inc. | Backplane reinforcement and interconnects for solar cells |
RU2448741C1 (ru) | 2011-03-24 | 2012-04-27 | Закрытое акционерное общество "Институт прикладной нанотехнологии" | Способ формирования наноструктурированного биосовместимого покрытия на имплантатах |
EP2710639A4 (de) | 2011-05-20 | 2015-11-25 | Solexel Inc | Selbstaktivierte vorderseiten-vorspannung für eine solarzelle |
CA2829605C (en) | 2013-10-07 | 2016-06-14 | Springpower International Incorporated | A method for mass production of silicon nanowires and/or nanobelts, and lithium batteries and anodes using the silicon nanowires and/or nanobelts |
GB202012302D0 (en) | 2020-08-07 | 2020-09-23 | Kings College | Lithiated silicon |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS6027179B2 (ja) * | 1975-11-05 | 1985-06-27 | 日本電気株式会社 | 多孔質シリコンの形成方法 |
US4155781A (en) * | 1976-09-03 | 1979-05-22 | Siemens Aktiengesellschaft | Method of manufacturing solar cells, utilizing single-crystal whisker growth |
US4392011A (en) * | 1980-04-30 | 1983-07-05 | Rca Corporation | Solar cell structure incorporating a novel single crystal silicon material |
JPS571265A (en) * | 1980-06-02 | 1982-01-06 | Fuji Electric Co Ltd | Solar cell |
US4954182A (en) * | 1980-11-13 | 1990-09-04 | Energy Conversion Devices, Inc. | Multiple cell photoresponsive amorphous photo voltaic devices including graded band gaps |
JPS57153478A (en) * | 1981-03-19 | 1982-09-22 | Agency Of Ind Science & Technol | Photoelectric conversion device |
US4532700A (en) * | 1984-04-27 | 1985-08-06 | International Business Machines Corporation | Method of manufacturing semiconductor structures having an oxidized porous silicon isolation layer |
DE3420887A1 (de) * | 1984-06-05 | 1985-12-05 | Telefunken electronic GmbH, 7100 Heilbronn | Solarzelle |
US4581103A (en) * | 1984-09-04 | 1986-04-08 | Texas Instruments Incorporated | Method of etching semiconductor material |
US4751194A (en) * | 1986-06-27 | 1988-06-14 | American Telephone And Telegraph Company, At&T Bell Laboratories | Structures including quantum well wires and boxes |
US4775425A (en) * | 1987-07-27 | 1988-10-04 | Energy Conversion Devices, Inc. | P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same |
DE3727823A1 (de) * | 1987-08-20 | 1989-03-02 | Siemens Ag | Tandem-solarmodul |
US4801380A (en) * | 1987-12-23 | 1989-01-31 | The Texas A&M University System | Method of producing a silicon film with micropores |
US4910165A (en) * | 1988-11-04 | 1990-03-20 | Ncr Corporation | Method for forming epitaxial silicon on insulator structures using oxidized porous silicon |
US4910115A (en) * | 1988-11-21 | 1990-03-20 | The Mead Corporation | Light-sensitive polymerizable compositions containing silver compounds |
US5023200A (en) * | 1988-11-22 | 1991-06-11 | The United States Of America As Represented By The United States Department Of Energy | Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies |
US4987094A (en) * | 1989-06-02 | 1991-01-22 | Bell Communications Research, Inc. | Method of making a macroscopic stepped structure on a vicinally cut crystal |
US5156896A (en) * | 1989-08-03 | 1992-10-20 | Alps Electric Co., Ltd. | Silicon substrate having porous oxidized silicon layers and its production method |
GB8927709D0 (en) * | 1989-12-07 | 1990-02-07 | Secretary Of The State For Def | Silicon quantum wires |
US5272355A (en) * | 1992-05-20 | 1993-12-21 | Spire Corporation | Optoelectronic switching and display device with porous silicon |
US5256339A (en) * | 1992-10-30 | 1993-10-26 | The United States Of America As Represented By The Secretary Of The Army | Fabrication technique for silicon microclusters using pulsed electrical power |
US5324965A (en) * | 1993-03-26 | 1994-06-28 | The United States Of America As Represented By The Secretary Of The Army | Light emitting diode with electro-chemically etched porous silicon |
US5420049A (en) * | 1993-09-09 | 1995-05-30 | The United States Of America As Represented By The Secretary Of The Navy | Method of controlling photoemission from porous silicon using ion implantation |
-
1989
- 1989-12-07 GB GB898927709A patent/GB8927709D0/en active Pending
-
1990
- 1990-12-06 ES ES90917418T patent/ES2074586T3/es not_active Expired - Lifetime
- 1990-12-06 DE DE69020906T patent/DE69020906T2/de not_active Expired - Fee Related
- 1990-12-06 WO PCT/GB1990/001901 patent/WO1991009420A1/en active IP Right Grant
- 1990-12-06 EP EP90917418A patent/EP0504170B1/de not_active Expired - Lifetime
- 1990-12-06 DK DK90917418.7T patent/DK0504170T3/da active
- 1990-12-06 CA CA002073030A patent/CA2073030C/en not_active Expired - Fee Related
- 1990-12-06 AT AT90917418T patent/ATE125066T1/de not_active IP Right Cessation
- 1990-12-06 JP JP3500255A patent/JP2611072B2/ja not_active Expired - Lifetime
- 1990-12-06 US US07/852,208 patent/US5348618A/en not_active Expired - Lifetime
- 1990-12-06 EP EP94201681A patent/EP0616378A3/de not_active Withdrawn
-
1992
- 1992-05-01 GB GB9209555A patent/GB2254188C/en not_active Expired - Fee Related
- 1992-10-14 US US07/960,694 patent/US6147359A/en not_active Expired - Lifetime
-
1993
- 1993-03-10 GB GB9304855A patent/GB2266994B/en not_active Expired - Fee Related
- 1993-07-26 US US08/096,410 patent/US5358600A/en not_active Expired - Lifetime
-
1994
- 1994-04-26 US US08/233,338 patent/US6369405B1/en not_active Expired - Lifetime
- 1994-05-16 JP JP10119794A patent/JP2963617B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0616378A2 (de) | 1994-09-21 |
ES2074586T3 (es) | 1995-09-16 |
GB9304855D0 (en) | 1993-04-28 |
DK0504170T3 (da) | 1995-09-04 |
GB8927709D0 (en) | 1990-02-07 |
GB2254188C (en) | 1994-12-23 |
DE69020906T2 (de) | 1995-12-14 |
US6147359A (en) | 2000-11-14 |
GB9209555D0 (en) | 1992-07-01 |
EP0616378A3 (de) | 1998-05-06 |
DE69020906D1 (de) | 1995-08-17 |
GB2254188B (en) | 1994-07-20 |
US6369405B1 (en) | 2002-04-09 |
JPH05502978A (ja) | 1993-05-20 |
EP0504170B1 (de) | 1995-07-12 |
US5348618A (en) | 1994-09-20 |
EP0504170A1 (de) | 1992-09-23 |
JP2963617B2 (ja) | 1999-10-18 |
GB2266994A (en) | 1993-11-17 |
GB2266994B (en) | 1994-08-03 |
CA2073030C (en) | 1999-02-23 |
CA2073030A1 (en) | 1991-06-08 |
WO1991009420A1 (en) | 1991-06-27 |
JP2611072B2 (ja) | 1997-05-21 |
JPH0774392A (ja) | 1995-03-17 |
GB2254188A (en) | 1992-09-30 |
US5358600A (en) | 1994-10-25 |
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