ES2048144T3 - Catodo de pulverizacion magnetron. - Google Patents
Catodo de pulverizacion magnetron.Info
- Publication number
- ES2048144T3 ES2048144T3 ES87105743T ES87105743T ES2048144T3 ES 2048144 T3 ES2048144 T3 ES 2048144T3 ES 87105743 T ES87105743 T ES 87105743T ES 87105743 T ES87105743 T ES 87105743T ES 2048144 T3 ES2048144 T3 ES 2048144T3
- Authority
- ES
- Spain
- Prior art keywords
- poles
- pole tabs
- anode
- interior
- spray cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007921 spray Substances 0.000 title abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3497—Temperature of target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3452—Magnet distribution
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Solid Thermionic Cathode (AREA)
- Gas-Filled Discharge Tubes (AREA)
- Glass Compositions (AREA)
- Coating By Spraying Or Casting (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Finishing Walls (AREA)
Abstract
MAQUETON DE CATODO DE PULVERIZACION QUE EN SU PARTE DELANTERA CONTACTAN UNOS CUERPOS PORTADORES (13) EN FORMA DE PLACAS CON EL ANODO (10) Y EN LA PARTE TRASERA CONTACTAN CON CUERPOS PORTADORES (13) CON UN SISTEMA MAGNETICO PERMANENTE EN FORMA DE PLACA. EL SISTEMA MAGNETICO PERMANENTE INTERIORMENTE DISPONE DE UNOS POLOS MAGNETICOS (16) EN FORMA DE VIGA EXTENDIDOS A LO LARGO DE LA LINEA CENTRAL, DOTADOS CON UNAS LENGUETAS DE POLO (17) CON SALIENTES EXTERIORES SEPARADOS A UNA DISTANCIA UNIFORME, Y EXTERIORMENTE DE UNOS POLOS MAGNETICOS (15) RECTANGULARES O CUADRADOS CON UNAS LENGUETAS DE POLO (19) LATERALES SITUADAS FRONTALMENTE A LOS POLOS MAGNETICOS (14) INTERIORES Y EN FORMA DE VIGA QUE DESCANSAN ENTRE CADA DOS LENGUETAS DE POLO (17), PRESENTAN Y GENERAN UN CAMPO MAGNETICO MEANDRICO QUE SE EXTIENDE TOTAL Y HOMOGENEAMENTE SOBRE LA SUPERFICIE DEL ANODO (10).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19863613018 DE3613018A1 (de) | 1986-04-17 | 1986-04-17 | Magnetron-zerstaeubungskathode |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2048144T3 true ES2048144T3 (es) | 1994-03-16 |
Family
ID=6298927
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES87105743T Expired - Lifetime ES2048144T3 (es) | 1986-04-17 | 1987-04-16 | Catodo de pulverizacion magnetron. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4826584A (es) |
EP (1) | EP0242826B1 (es) |
AT (1) | ATE96941T1 (es) |
DE (2) | DE3613018A1 (es) |
ES (1) | ES2048144T3 (es) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5009765A (en) * | 1990-05-17 | 1991-04-23 | Tosoh Smd, Inc. | Sputter target design |
US5171415A (en) * | 1990-12-21 | 1992-12-15 | Novellus Systems, Inc. | Cooling method and apparatus for magnetron sputtering |
US5230459A (en) * | 1992-03-18 | 1993-07-27 | Tosoh Smd, Inc. | Method of bonding a sputter target-backing plate assembly assemblies produced thereby |
US5269899A (en) * | 1992-04-29 | 1993-12-14 | Tosoh Smd, Inc. | Cathode assembly for cathodic sputtering apparatus |
US5374343A (en) * | 1992-05-15 | 1994-12-20 | Anelva Corporation | Magnetron cathode assembly |
DE4301516C2 (de) * | 1993-01-21 | 2003-02-13 | Applied Films Gmbh & Co Kg | Targetkühlung mit Wanne |
US5487822A (en) * | 1993-11-24 | 1996-01-30 | Applied Materials, Inc. | Integrated sputtering target assembly |
US5433835B1 (en) * | 1993-11-24 | 1997-05-20 | Applied Materials Inc | Sputtering device and target with cover to hold cooling fluid |
US5628889A (en) * | 1994-09-06 | 1997-05-13 | International Business Machines Corporation | High power capacity magnetron cathode |
US5597459A (en) * | 1995-02-08 | 1997-01-28 | Nobler Technologies, Inc. | Magnetron cathode sputtering method and apparatus |
JPH09176849A (ja) | 1995-12-22 | 1997-07-08 | Applied Materials Inc | スパッタリングターゲットのアッセンブリ |
US5736019A (en) * | 1996-03-07 | 1998-04-07 | Bernick; Mark A. | Sputtering cathode |
US5863398A (en) * | 1996-10-11 | 1999-01-26 | Johnson Matthey Electonics, Inc. | Hot pressed and sintered sputtering target assemblies and method for making same |
US6274015B1 (en) | 1996-12-13 | 2001-08-14 | Honeywell International, Inc. | Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same |
US5803342A (en) * | 1996-12-26 | 1998-09-08 | Johnson Matthey Electronics, Inc. | Method of making high purity copper sputtering targets |
US5985115A (en) * | 1997-04-11 | 1999-11-16 | Novellus Systems, Inc. | Internally cooled target assembly for magnetron sputtering |
KR20010005546A (ko) | 1997-03-19 | 2001-01-15 | 존슨매테이일렉트로닉스, 인코퍼레이티드 | 후면에 확산 니켈 플레이트된 타겟과 그의 생성방법 |
US6340415B1 (en) | 1998-01-05 | 2002-01-22 | Applied Materials, Inc. | Method and apparatus for enhancing a sputtering target's lifetime |
US6451185B2 (en) | 1998-08-12 | 2002-09-17 | Honeywell International Inc. | Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same |
WO2002022300A1 (en) * | 2000-09-11 | 2002-03-21 | Tosoh Smd, Inc. | Method of manufacturing sputter targets with internal cooling channels |
US8500975B2 (en) * | 2004-01-07 | 2013-08-06 | Applied Materials, Inc. | Method and apparatus for sputtering onto large flat panels |
US20060049040A1 (en) * | 2004-01-07 | 2006-03-09 | Applied Materials, Inc. | Apparatus and method for two dimensional magnetron scanning for sputtering onto flat panels |
US7513982B2 (en) * | 2004-01-07 | 2009-04-07 | Applied Materials, Inc. | Two dimensional magnetron scanning for flat panel sputtering |
EP1710829A1 (de) * | 2005-04-05 | 2006-10-11 | Applied Films GmbH & Co. KG | Magnetanordnung für ein Planar-Magnetron |
JP4923450B2 (ja) * | 2005-07-01 | 2012-04-25 | 富士ゼロックス株式会社 | バッチ処理支援装置および方法、プログラム |
US20070012559A1 (en) * | 2005-07-13 | 2007-01-18 | Applied Materials, Inc. | Method of improving magnetron sputtering of large-area substrates using a removable anode |
US20070012558A1 (en) * | 2005-07-13 | 2007-01-18 | Applied Materials, Inc. | Magnetron sputtering system for large-area substrates |
US20070084720A1 (en) * | 2005-07-13 | 2007-04-19 | Akihiro Hosokawa | Magnetron sputtering system for large-area substrates having removable anodes |
US20070012663A1 (en) * | 2005-07-13 | 2007-01-18 | Akihiro Hosokawa | Magnetron sputtering system for large-area substrates having removable anodes |
JP2009503255A (ja) * | 2005-07-25 | 2009-01-29 | アプライド マテリアルズ インコーポレイテッド | ラージフラットパネルにスパッタリングする方法及び装置 |
US20070051616A1 (en) * | 2005-09-07 | 2007-03-08 | Le Hienminh H | Multizone magnetron assembly |
US20070056850A1 (en) * | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Large-area magnetron sputtering chamber with individually controlled sputtering zones |
US7588668B2 (en) * | 2005-09-13 | 2009-09-15 | Applied Materials, Inc. | Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers |
US20070056843A1 (en) * | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones |
US20070080056A1 (en) * | 2005-10-07 | 2007-04-12 | German John R | Method and apparatus for cylindrical magnetron sputtering using multiple electron drift paths |
US20090301393A1 (en) * | 2006-05-13 | 2009-12-10 | Jens William Larsen | Vacuum coating apparatus |
DE102010049329A1 (de) | 2010-10-22 | 2012-04-26 | Forschungszentrum Jülich GmbH | Sputterquellen für Hochdrucksputtern mit großen Targets und Sputterverfahren |
WO2012102092A1 (ja) * | 2011-01-24 | 2012-08-02 | 日立金属株式会社 | マグネトロンスパッタリング用磁場発生装置 |
DE202011005269U1 (de) | 2011-04-14 | 2012-07-16 | Quin Gmbh | Dekorformteil |
US10325763B2 (en) * | 2017-01-20 | 2019-06-18 | Applied Materials, Inc. | Physical vapor deposition processing systems target cooling |
JP2020522130A (ja) | 2017-05-31 | 2020-07-27 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 3d−nandデバイスでのワードライン分離のための方法 |
US10950498B2 (en) | 2017-05-31 | 2021-03-16 | Applied Materials, Inc. | Selective and self-limiting tungsten etch process |
US10685821B2 (en) | 2017-08-18 | 2020-06-16 | Applied Materials, Inc. | Physical vapor deposition processing systems target cooling |
GB2562128B (en) * | 2017-09-29 | 2020-08-05 | Camvac Ltd | Apparatus and Method for Processing, Coating or Curing a Substrate |
EP3721466B1 (en) | 2017-12-05 | 2023-06-07 | Oerlikon Surface Solutions AG, Pfäffikon | Magnetron sputtering source and coating system arrangement |
JP7362327B2 (ja) * | 2019-07-18 | 2023-10-17 | 東京エレクトロン株式会社 | ターゲット構造体及び成膜装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2707144A1 (de) * | 1976-02-19 | 1977-08-25 | Sloan Technology Corp | Kathodenzerstaeubungsvorrichtung |
DE2735525A1 (de) * | 1977-08-06 | 1979-02-22 | Leybold Heraeus Gmbh & Co Kg | Katodenanordnung mit target fuer zerstaeubungsanlagen zum aufstaeuben dielektrischer oder amagnetischer schichten auf substrate |
US4461688A (en) * | 1980-06-23 | 1984-07-24 | Vac-Tec Systems, Inc. | Magnetically enhanced sputtering device having a plurality of magnetic field sources including improved plasma trapping device and method |
ATE10512T1 (de) * | 1980-08-08 | 1984-12-15 | Battelle Development Corporation | Vorrichtung zur beschichtung von substraten mittels hochleistungskathodenzerstaeubung sowie zerstaeuberkathode fuer diese vorrichtung. |
DE3149910A1 (de) * | 1981-12-16 | 1983-06-23 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zur kathodenzerstaeubung von mindestens zwei verschiedenen materialien |
CH646459A5 (de) * | 1982-03-22 | 1984-11-30 | Balzers Hochvakuum | Rechteckige targetplatte fuer kathodenzerstaeubungsanlagen. |
US4437966A (en) * | 1982-09-30 | 1984-03-20 | Gte Products Corporation | Sputtering cathode apparatus |
EP0106623B1 (en) * | 1982-10-05 | 1990-05-23 | Fujitsu Limited | Sputtering apparatus |
CA1184880A (en) * | 1982-11-18 | 1985-04-02 | Kovilvila Ramachandran | Sputtering apparatus and method |
JPS59200761A (ja) * | 1983-04-28 | 1984-11-14 | Toshiba Corp | スパツタリングタ−ゲツト支持装置 |
US4500409A (en) * | 1983-07-19 | 1985-02-19 | Varian Associates, Inc. | Magnetron sputter coating source for both magnetic and non magnetic target materials |
JPS6086272A (ja) * | 1983-10-18 | 1985-05-15 | Anelva Corp | スパツタ装置 |
US4600489A (en) * | 1984-01-19 | 1986-07-15 | Vac-Tec Systems, Inc. | Method and apparatus for evaporation arc stabilization for non-permeable targets utilizing permeable stop ring |
CH665057A5 (de) * | 1984-07-20 | 1988-04-15 | Balzers Hochvakuum | Targetplatte fuer kathodenzerstaeubung. |
KR900005347B1 (ko) * | 1984-09-19 | 1990-07-27 | 가부시기가이샤 히다찌세이사꾸쇼 | 플라즈마 처리장치 |
FR2573441B1 (fr) * | 1984-11-19 | 1987-08-07 | Cit Alcatel | Cathode-cible pour depot, par pulverisation, d'un materiau composite sur un substrat |
CH664303A5 (de) * | 1985-04-03 | 1988-02-29 | Balzers Hochvakuum | Haltevorrichtung fuer targets fuer kathodenzerstaeubung. |
-
1986
- 1986-04-17 DE DE19863613018 patent/DE3613018A1/de not_active Withdrawn
-
1987
- 1987-04-16 AT AT87105743T patent/ATE96941T1/de not_active IP Right Cessation
- 1987-04-16 ES ES87105743T patent/ES2048144T3/es not_active Expired - Lifetime
- 1987-04-16 DE DE87105743T patent/DE3787992D1/de not_active Expired - Fee Related
- 1987-04-16 US US07/038,973 patent/US4826584A/en not_active Expired - Fee Related
- 1987-04-16 EP EP87105743A patent/EP0242826B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0242826B1 (de) | 1993-11-03 |
EP0242826A3 (en) | 1989-12-13 |
EP0242826A2 (de) | 1987-10-28 |
US4826584A (en) | 1989-05-02 |
ATE96941T1 (de) | 1993-11-15 |
DE3787992D1 (de) | 1993-12-09 |
DE3613018A1 (de) | 1987-10-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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