ES2040812T3 - Fase terminal de potencia con una carga. - Google Patents

Fase terminal de potencia con una carga.

Info

Publication number
ES2040812T3
ES2040812T3 ES198888117942T ES88117942T ES2040812T3 ES 2040812 T3 ES2040812 T3 ES 2040812T3 ES 198888117942 T ES198888117942 T ES 198888117942T ES 88117942 T ES88117942 T ES 88117942T ES 2040812 T3 ES2040812 T3 ES 2040812T3
Authority
ES
Spain
Prior art keywords
load
power
field effect
effect transistor
terminal phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES198888117942T
Other languages
English (en)
Inventor
Hans-Georg Dipl.-Ing. Kumpfmuller
Joachim Dipl.-Ing. Schafer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of ES2040812T3 publication Critical patent/ES2040812T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit

Landscapes

  • Electronic Switches (AREA)
  • Dc-Dc Converters (AREA)
  • Power Conversion In General (AREA)
  • Direct Current Feeding And Distribution (AREA)

Abstract

EL NIVEL DE POTENCIA CON UNA CARGA (L) QUE ESTA CONECTADO POR UN RECORRIDO SOURCE-DRAIN DE UN TRANSISTOR DE EFECTO DE CAMPO (FET) CON UNA FUENTE DE TENSION (Q). ENTRE LAS CONEXIONES DRAIN Y GATE DEL TRANSISTOR DE EFECTO DE CAMPO SE ENCUENTRA UN CIRCUITO DOBLADOR DE TENSION ESPECIAL. ESTE CIRCUITO HACE QUE PARA SELECCIONAR EL TRANSISTOR DE EFECTO DE CAMPO SOLAMENTE SE NECESITA UNA TENSION DE MANDO Y UN INTERRUPTOR (TRANSISTOR DE MANDO T1).
ES198888117942T 1988-10-27 1988-10-27 Fase terminal de potencia con una carga. Expired - Lifetime ES2040812T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP88117942A EP0365706B1 (de) 1988-10-27 1988-10-27 Leistungsendstufe mit einer Last

Publications (1)

Publication Number Publication Date
ES2040812T3 true ES2040812T3 (es) 1993-11-01

Family

ID=8199495

Family Applications (1)

Application Number Title Priority Date Filing Date
ES198888117942T Expired - Lifetime ES2040812T3 (es) 1988-10-27 1988-10-27 Fase terminal de potencia con una carga.

Country Status (4)

Country Link
US (1) US4965696A (es)
EP (1) EP0365706B1 (es)
DE (1) DE3878242D1 (es)
ES (1) ES2040812T3 (es)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1228509B (it) * 1988-10-28 1991-06-19 Sgs Thomson Microelectronics Dispositivo per generare una tensione di alimentazione flottante per un circuito bootstrap capacitivo
USRE35745E (en) * 1988-10-28 1998-03-17 Sgs-Thomson Microelectronics S.R.L. Device for generating a reference voltage for a switching circuit including a capacitive bootstrap circuit
US5103160A (en) * 1991-04-25 1992-04-07 Hughes Aircraft Company Shunt regulator with tunnel oxide reference
CN1096746C (zh) * 1996-01-16 2002-12-18 艾利森电话股份有限公司 输出缓冲开关电路
DE19702949A1 (de) * 1997-01-28 1998-07-30 Stribel Gmbh Steuergerät
US6348818B1 (en) * 2000-08-14 2002-02-19 Ledi-Lite Ltd. Voltage-adder LED driver
US7119606B2 (en) * 2003-07-10 2006-10-10 Qualcomm, Incorporated Low-power, low-area power headswitch
US8004318B2 (en) * 2006-11-21 2011-08-23 Nxp B.V. Circuit arrangement for controlling a high side CMOS transistor in a high voltage deep sub micron process

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3866060A (en) * 1973-12-19 1975-02-11 Massachusetts Inst Technology Electric power source
US4420700A (en) * 1981-05-26 1983-12-13 Motorola Inc. Semiconductor current regulator and switch
US4599555A (en) * 1985-01-22 1986-07-08 Eaton Corporation Solid state DC power control system
US4636705A (en) * 1986-01-13 1987-01-13 General Motors Corporation Switching circuit utilizing a field effect transistor
US4737667A (en) * 1986-03-11 1988-04-12 Siemens Aktiengesellschaft Driving circuitry for a MOSFET having a source load
FR2596931B1 (fr) * 1986-04-04 1993-03-26 Thomson Csf Multiplicateur de tension continue pouvant etre integre a une structure semi-conductrice
US4733159A (en) * 1986-10-28 1988-03-22 Motorola, Inc. Charge pump voltage regulator
JPS63182913A (ja) * 1987-01-23 1988-07-28 Omron Tateisi Electronics Co 電界効果トランジスタの駆動回路

Also Published As

Publication number Publication date
EP0365706B1 (de) 1993-02-03
US4965696A (en) 1990-10-23
DE3878242D1 (de) 1993-03-18
EP0365706A1 (de) 1990-05-02

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