EP3895225A2 - Stabilisierung laserstrukturierter organischer fotovoltaik vorrichtungen - Google Patents
Stabilisierung laserstrukturierter organischer fotovoltaik vorrichtungenInfo
- Publication number
- EP3895225A2 EP3895225A2 EP19853242.6A EP19853242A EP3895225A2 EP 3895225 A2 EP3895225 A2 EP 3895225A2 EP 19853242 A EP19853242 A EP 19853242A EP 3895225 A2 EP3895225 A2 EP 3895225A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- laser
- particularly preferably
- stabilizing
- structuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000006641 stabilisation Effects 0.000 title claims description 24
- 238000013086 organic photovoltaic Methods 0.000 title abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 53
- 238000005538 encapsulation Methods 0.000 claims abstract description 44
- 230000000087 stabilizing effect Effects 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 23
- 238000011105 stabilization Methods 0.000 claims description 23
- 230000008569 process Effects 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 18
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 14
- 239000002243 precursor Substances 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 claims description 6
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 claims description 6
- 239000000178 monomer Substances 0.000 claims description 5
- 239000012495 reaction gas Substances 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- HKJYVRJHDIPMQB-UHFFFAOYSA-N propan-1-olate;titanium(4+) Chemical compound CCCO[Ti](OCCC)(OCCC)OCCC HKJYVRJHDIPMQB-UHFFFAOYSA-N 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052756 noble gas Inorganic materials 0.000 claims description 2
- 150000002835 noble gases Chemical class 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 4
- 239000011265 semifinished product Substances 0.000 abstract description 3
- 230000010354 integration Effects 0.000 abstract 1
- 230000003019 stabilising effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 102
- 230000004888 barrier function Effects 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 20
- 239000010408 film Substances 0.000 description 17
- 238000000151 deposition Methods 0.000 description 14
- 230000008021 deposition Effects 0.000 description 14
- 239000006096 absorbing agent Substances 0.000 description 12
- 229920000642 polymer Polymers 0.000 description 10
- 238000004804 winding Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000012044 organic layer Substances 0.000 description 5
- 150000003384 small molecules Chemical class 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229920006332 epoxy adhesive Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000003522 acrylic cement Substances 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000007783 nanoporous material Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000006101 laboratory sample Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000013335 mesoporous material Substances 0.000 description 1
- 239000012229 microporous material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention describes a method for producing a layer for stabilizing the poses of a laser-structured
- OCV organic photovoltaics
- stabilizing layer for laser-structured organic photovoltaics
- Organic photovoltaic modules consist of a stack on a substrate comprising two electrodes, one of which
- Electrode on the substrate and the other are applied as a counter electrode remote from the substrate.
- An organic layer stack is located between the two electrodes. The organic
- Photovoltaic modules can be manufactured, for example, by evaporating the materials, by printing polymers or by processing from liquids.
- organic photoactive components is for example in
- Heterojunctions e.g. bulc-heterojunction
- a photoactive layer in a layer stack of a cell can comprise only one acceptor or only one donor absorber material or can also comprise a combination of several absorber materials of different and / or the same type, and contribute to the formation of the
- the organic layer stack between the electrodes can consist not only of photoactive (absorber) layers. Instead, other layers, for example transport layers, preferably doped transport layers between individual photoactive (absorber) layers /
- photoactive (absorber) layer system and the electrodes introduced to build up multi-cell systems. This makes it possible to optimally arrange the photoactive layers with respect to the field strength distribution of the optical field.
- Organic photovoltaic modules organic solar cells or organic solar cells
- the encapsulation can be carried out by means of barrier films or by direct encapsulation.
- Laser-processed organic photovoltaic modules are structured using laser processes. This method is / can be used above all in the roll-to-roll process, firstly for the interconnection of individual solar cell strips on a module, and also for the electrical separation of solar modules.
- the interconnection of organic photovoltaic strips to a module can be implemented by laser interconnection (PI, P2, P3, P4), this principle is described for example in DE 10 2016 118 177 A1. This creates poses, so-called laser scribes, especially when structuring the electrodes, which reflect the height of the layer stack of the flat topology of a stack of an organic one
- DE 10 2015 116 418 A1 proposes printing a UV-crosslinked layer as a protective winding layer, the layer being applied silicone-based and liquid, in order to cause short-circuits in the course of further process steps, for example when winding up the module, by folding it over or in to prevent the poses.
- US 2008 / 0102206A1 discloses a process for producing a multilayer coating in one process step by varying the processing parameters.
- the printed UV-crosslinked layer proposed in DE 10 2015 116 418 A1 can also outgas after the crosslinking, as a result of which the adhesion of the subsequent encapsulation can be impaired. There was also occasional detachment of the counter electrode
- the task is to create a water barrier as part of the process
- Coating should not be used as a protective wrapping layer, since these parameters rather enable a rigid coating.
- the technical problem on which the present invention was based was, on the one hand, to stabilize throws created by laser structuring of the individual layers of the solar cell, in order to enable sealing or tight enclosure by means of a thin layer, which eliminates the disadvantages found in the prior art and on the other hand can be integrated in a roll-to-roll process.
- the possible application is particularly important for OPV based on small molecules. After this layer has been applied, a smooth surface can be applied Encapsulation can be applied. It is also important that the layer allows the semi-finished product to be wound up on its own and that it is not harmful to later opening and closing
- the inventors understand a semi-finished product to be an OPV module that is not yet encapsulated.
- the end product is encapsulated and equipped with the necessary connections for operation.
- the purpose of an encapsulation is to provide a barrier against environmental influences, for example water / water vapor, so that the service life of the OPV module is increased.
- Nanoporous materials consist of a regular framework that has a regular porous structure.
- the size of the pores is in the nanometer range. According to IUPAC, they are divided into three groups
- microporous materials with a size ⁇ 2 nm
- mesoporous materials with a size of 2 to 50 nm and
- macroporous materials with a size of more than 50 nm.
- the encapsulation can then be placed on this stabilizing layer
- planarization may be necessary for encapsulation.
- the SiOCH layer can be applied by means of plasma enhanced
- PECVD Chemical vapor deposition
- arcPECVD hollow cathode-supported PECVD
- BTMSM bis-trimethylsilymethane
- TEOS tetraethylorthosilicate
- TMS tetramethylsilane
- Precursers further precursors (precursor materials) are conceivable) are deposited.
- OLEDs organic light emitting diode
- the microwave PECVD method known. No laser structuring of the layers is necessary and known in the production of the OLEDs, this results in a flat topology in OLEDs, and the encapsulation can be done, for example, by a
- Thin film encapsulation which is carried out by microwave PECVD deposition, can be implemented directly.
- a plasma polymer is proposed as one of the barrier materials that has a low dielectric constant k (low-k material).
- the method according to the invention differs from the microwave PECVD method used in the OLED area, which is primarily oxidic in nature and the organic content of a layer
- thicker layers up to 500 ° nm or up to approximately 1 or 2 pm, can also be deposited than in the case of direct SiN encapsulation, which is typically approximately 100 ° nm thick.
- this layer has nanoporous properties so that the
- Manufacturing parameters do not lead to a nanoporous, flexible layer, but rather to a very stable and
- SiOCH is a silicon oxide (SiOx) that receives organic properties by means of a carbon content, i.e. the carbon content influences the chemical structure and the polymer-like, partially cross-linked chain structure.
- the material is more elastic and flexible than SiOx, it is a
- the provision of the laser-structured OPV includes at least the following steps:
- the stabilization layer comprises a SiOCH material or a SiOCH-like material that has nanoporous properties.
- Organic of the photovoltaic module is a transparent, long-term stable material and has sufficient mechanical stability, ie adhesion and flexibility or thermal expansion, so that no additional stress due to different expansion of the different materials (organic and
- the stabilization layer ideally implements a subsequent encapsulation of the complete module with barrier films and adhesives to protect the organic stack of the solar cell against unwanted interaction with the adhesive of the barrier film.
- the stabilization layer enables winding and unwinding during the later process steps for producing the end product in the roll-to-roll process and / or during the
- the stabilizing layer leads to better protection of the organic stack of the solar cell against unwanted
- Fig. 1 shows an example of the topography of laser-structured organic solar cells with the projections (A) (and (B)), which are to be stabilized and planarized for an encapsulation, including the stabilizing layer (5) according to the invention, an optional planarizing layer (6) and an encapsulation (7).
- the organic applied between the first and the second electrode (counter electrode) Layer stack comprising both absorber and (partially) doped and undoped transport layers and to which the second electrode (counter-electrode) is subsequently applied.
- a stabilization layer based on a nanoporous plasma polymer is applied to the layer stack described above to protect the laser-structured poses.
- the stabilization is carried out in preparation for a subsequent encapsulation by a method which comprises the following working steps: a) provision of the organic stack of the solar cell with P3 structuring b) application of the stabilization layer (5) and subsequent application of the encapsulation (7).
- the stabilizing layer (5) comprises a nanoporous plasma polymer comprising at least one precursor selected from the group tetramethylsilane (TMS), hexamethyldisiloxane (HMDSO),
- TEOS Tetraethylorthosilicate
- HDSN Hexamethyldisilazane
- Silane Silane
- Triethoxysilane TriEOS
- Tetramethoxysilane TMOS
- Trimethoxysilane TriMOS
- the stabilization layer (5) has a thickness greater than 100 nm, preferably greater than 150 nm, particularly preferably greater than 200 nm, very particularly preferably greater than 300 nm, more than particularly preferably greater than 500 nm.
- the stabilizing layer (5) comprises at least 2at% silicon or titanium, and at least 2at% oxygen or nitrogen, and contains at least 2at% carbon.
- the stabilizing layer (5) comprises a carbon content greater than 15at%, preferably greater than 20at%, particularly preferably greater than 25 at%
- the stabilizing layer (5) can be designed as a gradient, the carbon content varying over the thickness of the layer by at least 2at%, preferably by at least 4at%, particularly preferably by more than 6 at%.
- a reaction gas is selected from nitrogen and / or oxygen
- the stabilization layer comprises a material similar to SiOCH, for example SiONCH, SiNCH.
- a layer containing titanium can be used as
- Stabilizing layer can be used. This can be done using titanium-containing monomers, e.g. Titanium propoxide or
- Tetraisopropoyl orthotitanate TIPT
- TXCI 4 Tetraisopropoyl orthotitanate
- tetramethyaluminum, trimethylaluminum is proposed as the stabilizing layer that can be produced by using Al 2O 3 in conjunction with N 2O .
- an inert gas selected from the group of noble gases for example argon, xenon, neon, is used during production
- argon is used.
- the ratio of the reaction gas to the precursor is greater than 4, preferably greater than 6, and is less than 20, preferably less than 12, particularly preferably less than 10 If the ratios are too low, the layer tension of the stabilizing layer becomes too great.
- the coating pressure is less than 50 Pa, preferably less than 10 Pa, particularly preferably less than 5 Pa.
- the plasma power per sccm precursor monomer is not greater than 100 W / sccm, the plasma power is preferably in a range between 15 and 80 W / sccm, in a range between 30 and 80 W / sccm, particularly preferably in a range between 40 and 50 W / sccm.
- the subsequent encapsulation (7) can be carried out using barrier films or direct encapsulation. This can be achieved by known methods.
- the planarization layer (6) can, for example, by the
- the module can also be encapsulated with at least one PECVD layer or ALD (atomic layer deposition) layer.
- PECVD layer or ALD (atomic layer deposition) layer.
- ALD atomic layer deposition
- Embodiment 1 Layers containing materials based on small molecules in a roll-to-roll coating system.
- the lifespan is in both cases (with or without
- Stabilizing layer the same, or slightly improved with epoxy adhesive.
- the solar module is separated by SiOCH deposition in the overall process thin-film encapsulation, including wrapping and unwinding, and comprises the following process steps:
- the solar module is separated by SiOCH deposition in the overall process thin-film encapsulation, including wrapping and unwinding, and comprises the following process steps:
- A, B poses due to the laser structuring of the counter electrode and the structuring of the OPV
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Photovoltaic Devices (AREA)
- Formation Of Insulating Films (AREA)
- Drying Of Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102018132342.5A DE102018132342A1 (de) | 2018-12-14 | 2018-12-14 | Stabilisierung laserstrukturierter organischer Photovoltaik |
PCT/DE2019/101097 WO2020119865A2 (de) | 2018-12-14 | 2019-12-16 | Stabilisierung laserstrukturierter organischer photopholtaik |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3895225A2 true EP3895225A2 (de) | 2021-10-20 |
Family
ID=69630103
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP19853242.6A Pending EP3895225A2 (de) | 2018-12-14 | 2019-12-16 | Stabilisierung laserstrukturierter organischer fotovoltaik vorrichtungen |
Country Status (7)
Country | Link |
---|---|
US (1) | US20220310949A1 (de) |
EP (1) | EP3895225A2 (de) |
JP (1) | JP7555341B2 (de) |
KR (1) | KR20210102298A (de) |
CN (1) | CN113261125B (de) |
DE (1) | DE102018132342A1 (de) |
WO (1) | WO2020119865A2 (de) |
Family Cites Families (28)
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US6069313A (en) * | 1995-10-31 | 2000-05-30 | Ecole Polytechnique Federale De Lausanne | Battery of photovoltaic cells and process for manufacturing same |
AUPP953999A0 (en) * | 1999-03-30 | 1999-04-29 | Sustainable Technologies Australia Limited | Methods to manufacture single cell and multi-cell regenerative photoelectrochemical devices |
JP2003115598A (ja) | 2001-10-02 | 2003-04-18 | Sanyo Electric Co Ltd | 光起電力装置及びその製造方法 |
WO2004083958A2 (de) | 2003-03-19 | 2004-09-30 | Technische Universität Dresden | Photoaktives bauelement mit organischen schichten |
US20080102223A1 (en) * | 2006-11-01 | 2008-05-01 | Sigurd Wagner | Hybrid layers for use in coatings on electronic devices or other articles |
US20080102206A1 (en) * | 2006-11-01 | 2008-05-01 | Sigurd Wagner | Multilayered coatings for use on electronic devices or other articles |
JP2009110796A (ja) * | 2007-10-30 | 2009-05-21 | Sony Corp | 色素増感光電変換素子モジュールおよびその製造方法ならびに電子機器 |
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2019
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- 2019-12-16 EP EP19853242.6A patent/EP3895225A2/de active Pending
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- 2019-12-16 WO PCT/DE2019/101097 patent/WO2020119865A2/de unknown
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CN113261125A (zh) | 2021-08-13 |
CN113261125B (zh) | 2024-09-06 |
JP2022513232A (ja) | 2022-02-07 |
DE102018132342A1 (de) | 2020-06-18 |
US20220310949A1 (en) | 2022-09-29 |
KR20210102298A (ko) | 2021-08-19 |
WO2020119865A3 (de) | 2020-09-03 |
JP7555341B2 (ja) | 2024-09-24 |
WO2020119865A2 (de) | 2020-06-18 |
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