Classifications

• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B3/00—Simple or compound lenses
  • G02B3/0006—Arrays
  • G02B3/0012—Arrays characterised by the manufacturing method
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B3/00—Simple or compound lenses
  • G02B3/0006—Arrays
  • G02B3/0037—Arrays characterized by the distribution or form of lenses
  • G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
  • G02B27/30—Collimators
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B5/00—Optical elements other than lenses
  • G02B5/003—Light absorbing elements
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B5/00—Optical elements other than lenses
  • G02B5/005—Diaphragms
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B5/00—Optical elements other than lenses
  • G02B5/20—Filters
  • G02B5/201—Filters in the form of arrays
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
  • G06V10/00—Arrangements for image or video recognition or understanding
  • G06V10/10—Image acquisition
  • G06V10/12—Details of acquisition arrangements; Constructional details thereof
  • G06V10/14—Optical characteristics of the device performing the acquisition or on the illumination arrangements
  • G06V10/143—Sensing or illuminating at different wavelengths
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
  • G06V10/00—Arrangements for image or video recognition or understanding
  • G06V10/10—Image acquisition
  • G06V10/12—Details of acquisition arrangements; Constructional details thereof
  • G06V10/14—Optical characteristics of the device performing the acquisition or on the illumination arrangements
  • G06V10/147—Details of sensors, e.g. sensor lenses
• • G—PHYSICS
  • G06—COMPUTING; CALCULATING OR COUNTING
  • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
  • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
  • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
  • G06V40/12—Fingerprints or palmprints
  • G06V40/13—Sensors therefor
  • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
  • H01L27/144—Devices controlled by radiation
  • H01L27/146—Imager structures
  • H01L27/14601—Structural or functional details thereof
  • H01L27/1462—Coatings
  • H01L27/14623—Optical shielding
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
  • H01L27/144—Devices controlled by radiation
  • H01L27/146—Imager structures
  • H01L27/14601—Structural or functional details thereof
  • H01L27/14625—Optical elements or arrangements associated with the device
  • H01L27/14627—Microlenses
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
  • H01L27/144—Devices controlled by radiation
  • H01L27/146—Imager structures
  • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
  • H01L27/14685—Process for coatings or optical elements
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
  • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
  • G02B1/14—Protective coatings, e.g. hard coatings
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B2207/00—Coding scheme for general features or characteristics of optical elements and systems of subclass G02B, but not including elements and systems which would be classified in G02B6/00 and subgroups
  • G02B2207/123—Optical louvre elements, e.g. for directional light blocking
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B5/00—Optical elements other than lenses
  • G02B5/20—Filters
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
  • H10K39/30—Devices controlled by radiation
  • H10K39/32—Organic image sensors

Definitions

• the present description relates to angular filters and their manufacturing methods.
• An image acquisition system generally comprises an image sensor and an optical system, interposed between the sensitive part of the image sensor and the object to be imaged, and which makes it possible to form a sharp image of the object to be imaged on the sensitive part of the image sensor.
• the optical system can in particular comprise several levels of lenses.
• the object to be imaged it would then be necessary to place the object to be imaged as close as possible to the image sensor so that the image which forms on the sensitive part of the image sensor is sufficiently clear.
• a distance may be present between the object and the image sensor so that the sharpness of the image which forms on the sensitive part of the image sensor may not be sufficient for certain applications, for example for capturing fingerprints.
• the aspect ratio of the filter openings i.e. the ratio between the film thickness and the lateral dimension of each opening, should be greater than 1.
• An object of an embodiment is to overcome, in whole or in part, the drawbacks of the angular filters and their manufacturing methods described above.
• An object of an embodiment is a method of manufacturing an angular filter comprising openings allowing a ratio to be obtained between the depth of the openings and the lateral dimension of each opening which is greater than 1.
• Another object of an embodiment is that the method of manufacturing the angular filter can be implemented on an industrial scale.
• an embodiment provides a method of manufacturing an optical system comprising an angular filter comprising a stack of first and second elementary angular filters, the method comprising exposing a layer of a positive photosensitive resin through the first elementary angular filter and removing the exposed parts of the layer to form holes passing through said layer, said layer traversed by said holes forming the second elementary angular filter.
• the optical system comprises a face intended to receive a first radiation, the layer being opaque to the first radiation, the angular filter being configured to block the rays of said first radiation, the incidence of which with respect to a direction orthogonal to the face is greater than a threshold and to let through rays of said first radiation whose incidence relative to a direction orthogonal to the face is less than the threshold.
• the exposure step comprises exposing the layer to a second radiation through the first elementary angular filter, the positive photosensitive resin being photosensitive to the second radiation.
• the first radiation is in the visible range and / or in the infrared range.
• each first and second elementary angular filter comprises a layer crossed with holes.
• An embodiment also provides an optical system comprising an angular filter comprising a stack of first and second elementary angular filters, the second elementary angular filter comprising a layer of a positive photosensitive resin and holes passing through said layer.
• the system comprises a face intended to receive a first radiation, the layer is opaque to the first radiation, the angular filter being configured to block the rays of said first radiation whose incidence relative to a direction orthogonal to the face is greater than a threshold and to let through rays of said first radiation whose incidence relative to a direction orthogonal to the first face is less than the threshold.
• the positive photosensitive resin is photosensitive to the second radiation.
• the system comprises an additional layer interposed between the first elementary angular filter and the second elementary angular filter at least partially transparent to the first radiation.
• the ratio between the sum of the thicknesses of the first elementary angular filter, of the additional layer and of the second elementary angular filter, measured perpendicular to the face, and the width of the hole, measured parallel to the face is greater than 1, preferably varies from 1 to 10.
• the holes are arranged in rows and columns, the pitch between adjacent holes of the same row or the same column varying from 1 ym to 100 ym.
• the height of each hole measured in a direction orthogonal to the face, varies from 1 ⁇ m to 50 ⁇ m.
• the width of each hole, measured parallel to the face varies from 1 ⁇ m to 100 ⁇ m.
• Figure 1 is a sectional view, partial and schematic, of an embodiment of an image acquisition system comprising an angular filter
• Figure 2 is a sectional view of the angular filter shown in Figure 1;
• Figure 3 is a sectional view, partial and schematic, of the structure obtained in one step of an embodiment of a method of manufacturing the angular filter shown in Figures 1 and 2;
• Figure 4 is a sectional view, partial and schematic, of the structure obtained in another step of an embodiment of a method of manufacturing the angular filter shown in Figures 1 and 2;
• Figure 5 is a sectional view, partial and schematic, of the structure obtained in another step of an embodiment of a method of manufacturing the angular filter shown in Figures 1 and 2;
• Figure 6 is a sectional view, partial and schematic, of the structure obtained in another step of an embodiment of a method of manufacturing the angular filter shown in Figures 1 and 2;
• Figure 7 is a sectional, partial and schematic view of the structure obtained in another step of an embodiment of a method of manufacturing the angular filter shown in Figures 1 and 2.
• the expressions “approximately”, “approximately”, “substantially”, and “of the order of” mean to within 10%, preferably to within 5%.
• a layer or film is said to be opaque to radiation when the transmittance of the radiation through the layer or film is less than 10%.
• a layer or film is said to be transparent to radiation when the transmittance of the radiation through the layer or film is greater than 10%.
• FIG. 1 and 2 are sectional views, partial and schematic, according to perpendicular section planes, of an embodiment of an image acquisition system 5 receiving radiation 6.
• the image acquisition system 5, comprises, from bottom to top in FIG. 1:
• the image sensor 10 comprises a support 12 and a matrix of photon sensors 14, also called photodetectors, arranged between the support 12 and the optical system 20.
• the photodetectors 14 can be covered with a transparent protective coating , not shown.
• the image sensor 10 further comprises conductive tracks and switching elements, in particular transistors, not shown, allowing the selection of the photodetectors 14.
• the photodetectors 14 can be made of organic materials.
• the photodetectors 14 may correspond to organic photodiodes (OPD, from the English Organic Photodiode) or to organic photoresistors.
• the surface of the image sensor 10 facing the optical system 20 and containing the photodetectors 14 is greater than 1 cm 2 , preferably greater than 5 cm 2 , more preferably greater than 10 cm 2 , in particular greater than 20 cm 2 .
• the upper face 15 of the image sensor 10 can be substantially flat.
• each photodetector 14 is adapted to detect electromagnetic radiation in a range of wavelengths between 400 nm and 1100 nm. All the photodetectors 14 can be adapted to detect electromagnetic radiation in the same wavelength range. As a variant, the photodetectors 14 can be adapted to detect electromagnetic radiation in ranges of different wavelengths.
• the optical system 20 comprises, from the bottom to the top in FIG. 1:
• a coating 24 covering the angular filter 22 and comprising an upper face 26.
• the image acquisition system 5 further comprises means, not shown, for processing the signals supplied by the image sensor 10, comprising for example a microprocessor.
• the angular filter 22, covering the image sensor 10, is adapted to filter the incident radiation as a function of the incidence of the radiation relative to the upper face 26, in particular so that each photodetector 14 receives only the rays of which 1 incidence relative to an axis perpendicular to the upper face 26 is less a maximum angle of incidence less than 45 °, preferably less than 30 °, more preferably less than 20 °, even more preferably less than 10 °.
• the angular filter 22 is adapted to block the rays of the incident radiation whose incidence relative to an axis perpendicular to the upper face 26 is greater than the maximum angle of incidence.
• the angular filter 22 comprises two opaque layers 30, 40 separated by an intermediate layer 35.
• the opaque layer 30 is crossed by holes 32 and the opaque layer 40 is crossed by holes 42.
• the section plane of FIG. 2 is located at the level of the opaque layer 40 of the angular filter 22.
• Each layer 30, 40 is opaque to the radiation detected by the photodetectors 14, for example absorbing and / or reflecting with respect to the radiation detected by the photodetectors 14.
• each layer 30, 40 is absorbent in the visible and / or near infrared and / or infrared.
• the thickness of the layer 30 is called “hl” thereafter, "h2" the thickness of the layer 40 and "H” the thickness of the intermediate layer 35.
• the thicknesses "hl" and "h2" of the layers opaque 30, 40 may be the same or different.
• the number of holes 32 is equal to the number of holes 42.
• Each hole 32 is associated with one of the holes 42.
• each hole 32 is aligned with one holes 42 in a given direction, preferably perpendicular to the face 26.
• the holes 42 are shown with a circular cross section.
• the cross section of the holes 32, 42, in the top view can be circular, oval or polygonal, for example triangular, square or rectangular.
• each hole 32 has the same cross section as the hole 42 with which it is aligned.
• the holes 32, 42 are shown with a constant cross section over the entire thickness of the opaque layer 30, 40.
• the cross section of each hole 32, 42 may vary over the thickness of the opaque layer 30,
• the holes 32 are arranged in rows and columns and the holes 42 are arranged in rows and columns.
• the holes 32 may have substantially the same dimensions and the holes 42 may have substantially the same dimensions.
• the width w corresponds to the diameter of the hole 32, 42 in the case of a hole of circular cross section.
• the holes 32 and 42 are arranged regularly in the rows and in the columns.
• the repetition step of the holes 32 or "p" is called 42, that is to say the distance in top view of the centers of two successive holes 32 or 42 of a row or of a column.
• the holes 32 or 42 can all have the same width w.
• the holes 32 or 42 may have different widths w.
• the width w of the holes 32 is substantially equal to the width of the holes 42.
• the repetition step p of the holes 32 is substantially equal to the repetition step p of the holes 42.
• the layer 30 comprising the holes 32 forms a first elementary angular filter F1 and the layer 40 comprising the holes 42 forms a second elementary angular filter F2.
• the aspect ratio of the holes 32 of the first elementary angular filter F1 is equal to hl / w and the aspect ratio of the holes 42 of the second elementary angular filter F2 is equal to h2 / w.
• the structure obtained by the superposition of the first and second elementary angular filters F1 and F2, with the interposition of the intermediate layer 35 is equivalent to a global angular filter 22 whose aspect ratio of the holes would be equal (hl + h2 + H) / w.
• the angular filter 22 therefore lets only the rays of the incident radiation pass, the incidence of which with respect to the upper face 26 is less than a maximum angle of incidence a, which is defined by the following relation (1):
• Tan a w (hl + h2 + H) (1)
• the photodetectors 14 can be distributed in rows and columns.
• the pitch p of the holes 42 is smaller than the pitch of the photodetectors 14 of the image sensor 10. In this case, several holes 42 may be located opposite the same photodetector 14.
• the pitch p of the holes 42 is identical to the pitch of the photodetectors 14 of the image sensor 10.
• the angular filter 22 is then preferably aligned with the image sensor 10 so that each hole 42 faces a photodetector 14.
• the pitch p of the holes 42 is larger than the pitch of the photodetectors 14 of the image sensor 10. In this case, several photodetectors 14 may be located opposite the same hole 42.
• the ratio (hl + h2 + H) / w can vary from 1 to 10 or even greater than 10.
• the pitch p can vary from 1 ⁇ m to 100 ⁇ m, for example approximately 15 ⁇ m.
• the height hl + H + h2 can vary from 1 ⁇ m to 1 mm, preferably from 10 ⁇ m to 100 ⁇ m.
• Each height hl or h2 can vary from 1 ym to 50 ym.
• Each height H can vary from 1 ym to 100 ym.
• the width w can vary from 1 ym to 100 ym, for example around 10 ym.
• each opaque layer 30, 40 is entirely made of an absorbent material at least for the wavelengths to be angularly filtered.
• at least one of the opaque layers 30 and 40 is made of a positive photosensitive resin, that is to say a photosensitive resin for which the part of the resin layer exposed to radiation becomes soluble in a developer and where the part of the photosensitive resin layer which is not exposed to radiation remains insoluble in the developer.
• At least one of the opaque layers 30 and 40 can be colored resin, for example a colored or black DNQ-Novolac resin or a DUS photosensitive resin (English acronym for Deep Ultraviolet).
• DNQ-Novolaque resins are based on a mixture of diazonaphthoquinone (DNQ) and a novolak resin (phenolformaldehyde resin).
• DUV resins can include polymers based on polyhydroxystyrenes.
• each opaque layer 30 and 40 may be made of a black resin absorbing in the visible range or part of the visible and the near infrared.
• each opaque layer 30, 40 may further be made of a colored resin absorbing visible light of a given color, for example blue light, in the case where the image sensor 10 is sensitive only to the light of given color or in the case where the image sensor 10 is sensitive to visible light and that a filter of the given color and interposed between the angular filter 22 and the object to be detected.
• a colored resin absorbing visible light of a given color, for example blue light
• the holes 32 or 42 may be filled with air or filled with a material at least partially transparent to the radiation detected by the photodetectors 14, for example polydimethylsiloxane (PDMS).
• PDMS polydimethylsiloxane
• the holes 32 or 42 can be filled with a partially absorbent material in order to chromatically filter the rays angularly filtered by the angular filter 22.
• the angular filter 22 can then also play the role of a colored filter. This makes it possible to reduce the thickness of the system 5 compared to the case where a color filter distinct from the angular filter 22 is present.
• the partially absorbent filler material may be a colored resin or a colored plastic material such as PDMS.
• the filling material for the holes 32 can be selected in order to have an adaptation of the refractive index with the coating 24 in contact with the angular filter 22 or else to stiffen the structure and improve the mechanical strength of the angular filter 22 .
• the layer 30 comprises a core made of a first material at least partially transparent to the radiation detected by the photodetectors 14 and covered with a coating opaque to the detected radiation by the photodetectors 14, for example absorbing and / or reflecting with respect to the radiation detected by the photodetectors 14.
• the first material can be a resin.
• the second material can be a metal, for example aluminum (Al) or chromium (Cr), a metal alloy or an organic material.
• the intermediate layer 35 is at least partially transparent to the radiation picked up by the photodetectors 14.
• the intermediate layer 35 can be made of a transparent polymer, in particular of poly (ethylene terephthalate) PET, poly (methyl methacrylate) PMMA, cyclic olefin polymer (COP).
• the layer 35 can also be made of colored material in order to filter part of the visible and / or infrared spectrum.
• the coating 24 is at least partially transparent to the radiation picked up by the photodetectors 14.
• the coating 24 may be a resin, a hard coating (in English hard coating) intended to stiffen the surface, or else a transparent optical adhesive (OCA , English acronym for Optically Clear Adhesive) used to assemble the filter 20 to an upper layer.
• OCA transparent optical adhesive
• the coating 24 can have a thickness of 0.1 ⁇ m and 10 mm.
• the upper face 26 can be substantially flat.
• the system 5 can also comprise a matrix of microlenses covering the angular filter 22, for example interposed between the angular filter 22 and the coating 24.
• Figures 3 to 7 are sectional views, partial and schematic, of structures obtained in successive stages of an embodiment of a method of manufacturing the optical system 20 shown in Figures 1 and 2.
• the first elementary angular filter F1 can be formed on a support different from the intermediate layer 35 and then be attached to the intermediate layer 35.
• An embodiment of a method for manufacturing the first elementary angular filter F1, when the layer 30 is entirely made of an opaque material comprises the following steps:
• Another embodiment of a method for manufacturing the first elementary angular filter F1, when the layer 30 is entirely made of an opaque material comprises the following steps:
• Another embodiment of a method for manufacturing the first elementary angular filter F1 when the layer 30 is entirely made of an opaque material, comprises the perforation of an opaque film of thickness hl, for example a film in PDMS, PMMA, PEC, COP.
• the perforation can be carried out using a micro-perforation tool comprising for example micro-needles to obtain the dimensions of the holes 32 and the pitch of the holes 32 desired.
• an embodiment of a method of manufacturing the first angular filter F1 comprises the following steps:
• a coating on the transparent resin core in particular by selective deposition, for example by evaporation, of the second material only on the transparent resin core and in particular on the side walls of the holes 32, or by depositing a layer of the second material on the transparent resin core and on the intermediate layer 35 at the bottom of the holes 32 and by removal of the second material present on the intermediate layer 35.
• FIG. 4 represents the structure obtained after the formation of the coating 24 on the first elementary angular filter F1.
• the formation of the coating 24 can comprise the laminating of a film on the first elementary angular filter F1
• the holes 32 can be filled beforehand with a filling material.
• the coating 24 can be formed by depositing a liquid or viscous layer of the material making up the coating 24 on the first angular filter. elementary F1. The liquid layer thus fills the holes 32. This layer is preferably self-planarizing, that is to say that it automatically forms a substantially plane free face. The liquid layer is then hardened to form the coating 24. This may include a step of crosslinking the material making up the coating 24.
• the opaque layer 40 can be deposited by liquid, by sputtering or by evaporation. These may in particular be processes of the spinner deposition type, spray coating, heliography, die coating (in English slot-die coating), blade coating (in English blade-coating), flexography or screen printing. Depending on the deposition process used, a step for drying the deposited material may be provided.
• FIG. 6 represents the structure obtained during a step of exposure to radiation 44, passing through the first elementary angular filter F1, of parts 46 of the opaque layer 40 at the desired locations of the holes 42.
• the radiation used to expose the opaque layer 40 depends on the photosensitive resin used.
• the radiation 44 is radiation of wavelengths between approximately 300 nm and 450 nm in the case of a DNQ-Novolaque resin or ultraviolet radiation for a DUV photosensitive resin.
• the duration of the exposure of the opaque layer 40 to radiation 44 depends in particular on the type of positive photosensitive resin used and is sufficient for the exposed parts 46 of the opaque layer 40 to extend over the entire thickness of the opaque layer 40 .
• the exposure of the opaque layer 40 is carried out through the first elementary angular filter F1.
• the incident radiation 44 which reaches the first elementary angular filter F1 is a substantially collimated radiation.
• the inclination of the radiation 44 relative to the upper face 26 corresponds substantially to the average inclination formed by the radiation 6 received by the photodetectors 14 with the upper face 26 during normal use of the acquisition system of image 5.
• the conditions of exposure of the face 26 to the radiation 44 correspond substantially to the conditions of illumination of the face 26 by the radiation 6 in normal use, the inclination of the radiation 44 then being able to not be uniform over the entire face 26.
• the exposed parts 46 may vary in size with respect to each other and the relative position between each exposed part 46 and the associated hole 32 may vary by one hole 32 to another.
• FIG. 7 represents the structure obtained during a stage of development of the opaque layer 40 which has resulted in the dissolution, in a developer, of the parts 46 of the opaque layer 40 exposed to the incident radiation 44, thus forming the holes 42.
• the second elementary angular filter F2 is thus obtained.
• the composition of the developer depends on the nature of the positive photosensitive resin that has been used.
• the method can include subsequent steps comprising filling the holes 42 with a filling material and fixing the optical system 20 thus obtained to the image sensor 10.
• the alignment of the holes 32 relative to the microlenses 42 is obtained automatically by the very process of forming the holes 42.
• Various embodiments and variants have been described. Those skilled in the art will understand that certain features of these various embodiments and variants could be combined, and other variants will appear to those skilled in the art.

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  • 2019-07-18 CN CN201980048205.8A patent/CN112437891B/zh active Active
  • 2019-07-18 US US17/260,955 patent/US20210318475A1/en active Pending
  • 2019-07-18 EP EP19740010.4A patent/EP3824327A1/fr active Pending
  • 2019-07-18 WO PCT/EP2019/069455 patent/WO2020016393A1/fr active Application Filing

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