Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/50—Substrate holders
  • C23C14/505—Substrate holders for rotation of the substrates
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
  • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
  • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
  • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
  • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
  • C23C16/32—Carbides
  • C23C16/325—Silicon carbide
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
  • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
  • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
  • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
  • C30B25/02—Epitaxial-layer growth
  • C30B25/12—Substrate holders or susceptors

Definitions

• the invention relates to a device for separating in particular from decomposition products of gaseous starting materials, which in particular contain silicon and carbon, built-up layers on one or more substrates, with a susceptor arrangement arranged in a reactor housing with at least one to one Process chamber pointing, a pocket having broad side plane and with a lying in the at least one pocket support ring for carrying and handling of the substrate, wherein a parallel to the broad side plane extending top of the support ring adjacent to a boundary surface of a recess in which the substrate can be arranged net ,
• the invention also relates to a support ring for use on such a device or in a method for depositing layers, which consist in particular of carbon and silicon.
• the invention also relates to a use of such a support ring.
• a genus in modern device which is particularly suitable for the deposition of SiC, has a process chamber which is arranged in a reactor housing and in particular is also evacuated.
• a bottom of the process chamber is formed by a susceptor assembly.
• the susceptor arrangement can be heated from below.
• the process chamber arranged above the susceptor arrangement is delimited at the top by a process chamber ceiling.
• a gas inlet member opens to the inlet of gaseous starting materials, which in particular contain carbon and silicon.
• the process chamber or the broad side plane of the susceptor arrangement facing the process chamber are heated to process temperatures at which the starting materials, which may be silane and methane or other silicon hydrogens or hydrocarbons, decompose, so silicon carbide layers are deposited on substrates carried by the susceptor assembly. This takes place at temperatures above 1000 degrees Celsius, in particular above 1300 degrees Celsius or 1500 degrees Celsius.
• Support rings are provided for handling the substrates, which engage in pockets of the susceptor arrangement, wherein edges of the substantially circular substrates rest on bearing surfaces of the support ring, at least when the substrates are being handled.
• a gripper which has two gripping fingers extending parallel to one another, a radially outer portion of the support ring can be grasped in order to lift it out of the pocket of the susceptor arrangement.
• the susceptor arrangement preferably has channels open to the edge, into which the gripping fingers can engage.
• the top of the support ring is substantially sharp-edged in one Inner cylinder surface over which surrounds the edge of the substrate.
• the distance between the support surface for supporting the edge of the substrate on the support ring to the top of the support ring corresponds there substantially to the material thickness of the substrate, so that the substrate surface runs at the same level, on which runs the top of the support ring.
• the object of the invention is to take measures to prevent the formation of such deposits on the edge of the support ring.
• the peripheral edge of a support element which is formed by a support ring is rounded or touched such that there reduces the particle deposition.
• a substantially an upper side of the support element merges into a boundary surface extending along an inner cylinder jacket surface, forming a sharp, possibly merely broken edge, according to the invention the edge is rounded or designed as a chamfer.
• the substantially flat upper side of the support element preferably passes without kinks into a torus surface.
• the torus surface which represents the rounding, is flush, that is, free of kinks in the extending along an inner cylinder surface boundary surface over.
• the radius of curvature should be at least 0.1 mm.
• the radius of curvature is greater than 0.2 mm, 0.3 mm, 0.4 mm or 0.5 mm.
• the rounded peripheral edge, with which the upper side merges into the boundary surface can directly adjoin a bearing surface on which the edge of the substrate rests. According to a preferred embodiment, however, it is provided that the rounded edge merges into an inner cylinder jacket surface area.
• the boundary surface merges with the formation of a chamfer in the upper side of the ring
• the chamfer preferably has a width of 0.2 mm, 0.3 mm, 0.4 mm or 0.5 mm.
• the edge of the substrate preferably lies opposite the region of the boundary surface extending along an inner cylinder jacket surface.
• the distance between a plane in which the upper side of the support element extends from a second plane in which the support surface of the support element extends is preferably greater than the material thickness of the substrate.
• the support element may be a closed ring. It can have a circular or even non-circular outline.
• the support element can also be composed of several parts.
• the distance is preferably at least 1 mm with a material thickness of the substrate of about 0.5 mm.
• the height, measured in the direction of the surface normal of the support surface, of the region of the boundary surface extending on an inner cylinder jacket surface is preferably greater than the material thickness of the substrate. But it may also correspond to the material thickness of the substrate or be slightly smaller than the material thickness of the substrate.
• the height of this area of the boundary surface may be greater or less than the radius of the rounded edge or the width of the chamfer. It is provided in particular that the height of the inner cylindrical portion of the boundary surface is smaller than half the distance of the support surface from the upper side of the support ring.
• the average diameter of the boundary surface is slightly larger than the diameter of the substrate in such a way that the distance of an edge of the substrate from the boundary surface and in particular from the inner cylindrical portion of the boundary surface is smaller than the radius of the rounded edge or bevel.
• the support ring may have a radially inner region and a radially outer region. The radially inner region of the support ring lies at least in sections on a support flank of a substrate holder.
• the substrate holder forms a cap-shaped, in particular circular disk-shaped object which rests on the upper side of a susceptor.
• Means for example gas outlet openings, can be arranged in the upper side of the susceptor with which the substrate holder is held in suspension relative to the upper side.
• a gas stream emerges from the gas outlet openings, forming a gas cushion on which the substrate holder rests.
• the substrate holder can be set in rotation about its axis.
• the support ring resting on the substrate holder and the substrate carried by the support ring are thus rotationally driven during the execution of the deposition process.
• the substrate can rest with its edge on the support ring. But it can also rest on the substrate holder.
• the upper side of the substrate holder may in particular have support projections arranged on a circular arc line, on which the substrate rests, so that it is only stored at points.
• the substrate holder is located in a pocket which may be formed by one or more cover plates resting on the susceptor.
• An inner wall of the pocket may be spaced from a peripheral wall of the substrate holder. From the radially outer edge of the preferably circular susceptor arrangement channels can emerge, which affect the support ring on two diametrically opposite sides. Fingers of a support arm can engage in these channels in order to undercut the radially outer edge of the support ring, which protrudes beyond the substrate holder, in order to lift the support ring with the substrate carried by it and convey it out of the process chamber.
• the Edge of the bag is formed by bevel.
• the chamfer adjoins the broad side surface of the susceptor assembly and an inner wall of the pocket, which is formed by an inner cylinder jacket surface. Measured in the direction of the surface normal of the major surface height of the chamfer is preferably greater than the HOE S hener treckung of the support ring.
• a support ring according to the invention has an upper side extending in a broad side plane and a lower side extending parallel thereto, wherein the upper side is assigned in particular to a radially outer region and the lower side in particular to a radially inner region.
• the radially inner region furthermore has a support surface for supporting the edge of the substrate, which is spaced from the upper side of the support ring by more than the material thickness of the substrate.
• the upper side merges into the boundary surface, forming a rounded edge or a chamfer, which extends in the circumferential direction around the edge of the substrate and which can have a region which extends along a cylinder jacket wall of an inner cylinder.
• the invention relates in particular to a CVD reactor, a susceptor arrangement, a support ring or the use of a support ring, wherein the rounded edge in a running through a central axis of the ring radial cross-sectional area in particular kink-free along at least in the region of their to the flat top and the cylindrical boundary surface extending curved, at least 0.3 mm, 0.4 mm, 0.5 mm or 0.6 mm long arcuate border adjacent endpoints.
• it is advantageous for the curved section to extend smoothly into its upper side or boundary surface at its end points without kinking.
• FIG. 6 shows a representation according to FIG. 4 of a second exemplary embodiment
• FIG. a representation according to Figure 5 of the second embodiment
• FIG. a representation according to Figure 5, but the state of
• FIG. 2 shows a CVD reactor 1 with a housing made of stainless steel, which closes a process chamber 2 arranged therein in a gastight manner to the outside and which can be evacuated.
• a gas inlet element 5 process gases, for example a silicon hydrogen and a carbon hydrogen, together with a carrier gas, for example FF, can be fed into the process chamber.
• the process chamber 2 is bounded at the top by a process chamber ceiling 4.
• the feed of the process gases takes place in a center of the essentially rotationally symmetrical process chamber 2.
• the bottom of the process chamber 2 is formed by a susceptor arrangement 3, as illustrated in FIGS. 1 and 3.
• the susceptor arrangement 3 is formed by a susceptor 14, in particular consisting of graphite or coated graphite, which forms a circular disk-shaped supporting body on which the substrates 10 are arranged in a circle around the center of the susceptor arrangement 3.
• a rotary drive 9 is provided in order to drive the susceptor arrangement 3 about an axis of rotation 7.
• a heater 6, with which the susceptor 3 is heatable to a process temperature At this process temperature, the starting materials fed into the process chamber 2 through the gas inlet element decompose such that a silicon carbide layer is deposited on the substrate 10. Reaction products then leave the process chamber 2 together with the carrier gas through a gas outlet 8.
• each pocket 17 is a substrate holder 12, which rests on a gas cushion, not shown in the drawings, between the upper side of the susceptor 14 and the underside of the substrate holder 12.
• the gas cushion is formed by a carrier gas emerging from gas outlet openings in the susceptor top side, wherein the gas outlet openings are directed in such a way that the substrate holder 12 is set in rotation in its figure axis.
• An edge region of the circular disk-shaped substrate holder 12 forms a supporting flank 13, on which a radially inner region 22 of a supporting ring 20 rests.
• An inner wall 22 'of the support body 20 bears against a step wall which adjoins the supporting flank 13.
• the radially inner region 22 of the support ring 20 has a support surface 23, on which in the embodiment shown in Figures 6 and 7, a radially outer edge portion of the substrate 10 rests.
• the underside of the substrate 10 is at a distance c from the top of a central region of the substrate holder, wherein the distance c may be somewhat greater or slightly smaller than the material thickness d of the substrate 10, which may be below one millimeter ,
• the substrate holder 12 has a plurality on a circular arc line about the center of the substrate holder before S prünge 32 on which the substrate 10 is supported, so that there is a distance c from the top of the substrate holder 12 has.
• the support surface 23 extends here in the same plane in which the top of the substrate holder 12 extends, so that the underside of the substrate 10 is slightly spaced from the support surface 23.
• the edge region of the substrate 10 only comes into contact with the support surface 23 when the support ring 20 is used as an element for transporting the substrate 10.
• the bearing surface 23 adjoins a boundary surface 24 in the radial outer direction. In the region adjoining the boundary surface 24, a circumferential groove extends in the support surface 23.
• the area of the boundary surface 24 adjoining the support surface 23 extends on an inner cylinder jacket surface and has a height a which is greater than the material thickness d of the substrate 10.
• the height a is preferably at least 0.5 mm.
• the upper side 26 of the support ring 20 extending in a parallel plane to the broad side surface 15 'and in particular the upper side 26 of the radially outer region 21 of the support ring 20 is in the exemplary embodiment illustrated in FIGS. 6 and 7, which is the preferred exemplary embodiment.
• the torus surface thus forms a rounded edge 25.
• the radius of curvature R of the rounded edge 25 is greater than 0.4 mm, preferably greater than 0.5 mm.
• the sum of the height a and the radius R corresponds to a distance b between a first plane in which the upper side 26 extends and a second plane in which the support surface 23 extends.
• the distance measure b is smaller than twice the distance measure a.
• the height difference between support surface 23 and top 26 is preferably at least 1 mm.
• the upper side 26 merges into the inner wall 24, forming a chamfer 25 'extending on a conical surface.
• the chamfer width is preferably greater than 0.4 mm or greater than 0.5 mm.
• the height of the chamfer here corresponds to the radius R. It is smaller than the distance measure a.
• the distance measure b is also smaller than twice the distance measure a.
• the chamfer 25 'can also kinkstellenok in the inner wall 24 and the top 26 ausfau- fen.
• the chamfer 25 'can also be adjacent to several chamfers, so that the cross section can also run polygonal.
• the radially outer region 21 of the support ring 20 projects beyond a peripheral wall 19 of the substrate holder 12.
• the projection formed in this way which extends around the entire circumference of the support ring 20, can be grasped by a gripper (not shown in the drawings) ,
• a gripping arm has two gripping fingers running parallel to one another, which can engage under the radial projection of the supporting ring at diametrically opposite sections.
• the cover plates 15 form channels 31, in which the gripping fingers of the gripper arm can engage.
• a plane in which the top 26 extends has a distance to a plane in which the broadside plane 15 'extends.
• the distance e corresponds approximately to the radius of curvature R of the rounded edge 25 or the width or height of the chamfer 25 ', but may also be smaller than the radius R. It is especially provided that the distance of the upper side 26 from the top of the susceptor 14 is greater than the distance of the broad side plane 15 'from the top of the susceptor 14.
• the radially outer portion 21 of the support ring 20 thus forms an annular elevation of the broad side plane 15', wherein both the inner edge edge 25 of this survey as well as the Outer edge 29 of this survey are rounded or chamfered.
• the two rounding radii of the rounded edges 25, 29 can be the same. Instead of rounding, the edges 25,
• an inner wall 18 of the pocket 17 extending along an inner cylinder jacket wall faces a circumferential wall 19 of the substrate holder 12 that extends on a cylinder outer jacket wall at a distance.
• the inner wall 18 of a cover plate 15 may adjoin a chamfer 16.
• the chamfer 16 adjoins the broad side plane 15 '.
• the height of the thread 16 measured in the direction of the surface normal of the broad side plane 15 ' may be greater than the material thickness of the support ring 20.
• the height of the peripheral wall 19 is greater than the height of the shell on an inner cylinder jacket wall extending portion of the inner wall 18.
• the material thickness of the support ring 20 may be about 3 mm.
• the thread 16 may be opposed to an outer surface 30 which runs on a cylinder jacket wall and which forms the outer boundary of the support ring 20.
• Figure 8 shows an arrangement similar to the arrangement shown in Figure 7, however, of the prior art.
• the transition edge between broad side plane 15 'and boundary surface 24 is here sharp-edged.
• parasitic deposits 28, which influence the flow of the process gases over the surface of the substrate 10 or the cover plates 15 and 27, form at the transition edge 25 '.
• rounding or rounded edge or rounded edge is understood to mean not only a transition region between a flat surface and an inner surface of a cylinder, which is toroidal. is shaped so that it has a cross-section in the form of a quarter circle arc, but also those transition regions whose cross-section is a polygonal line, wherein the individual line elements of the polygonal line extending over an angle of 90 ° merge into one another, so that the Transition region between the flat surface and cylinder inner surface runs kink-free.
• a device which is characterized in that the boundary surface 24 merges into the upper side 26 of the ring 20, forming a rounded edge 25 or a chamfer 25 '.
• a device which is characterized in that a support surface 23 formed by a radially inner region 22 of the support ring 20 for supporting an edge of the substrate 10 is spaced from the upper side 26 by a distance b which is greater than the material thickness d of the substrate 10.
• a device which is characterized in that a section 24 of the boundary surface extending substantially along an inner cylinder jacket surface has a height a which is greater than the material thickness d of the substrate 10 and / or which is greater than that Radius R of the rounded edge 25 or chamfer 25 'and / or is smaller than half of the distance b of a plane in which the support surface 23 extends from a plane in which the top surface 26 extends. [0033] A device characterized in that the distance of an edge 10 'of the substrate 10 from the portion 24 of the boundary surface selling along an inner cylinder jacket surface is smaller than the radius R of the rounded edge 25 or the width of the chamfer 25'. ,
• a device which is characterized in that the radius R of the rounded edge 25 or the width of the chamfer 25 'at least 0.4 mm, preferably at least 0.5 mm and / or that the top 26 to form a second rounded edge 29 or a second chamfer merges into a peripheral surface 30, wherein the radius of the second rounded edge 29 or the second chamfer is at least 0.4 mm, preferably at least 0.5 mm.
• a device which is characterized in that the support ring 20 rests with its radially inner region 22 on a support flank 13 of a substrate holder 12, wherein the substrate holder 12 rests on the upper side of a susceptor 14 and above a heating device 6 is arranged, with which the Suszeptoran extract 3 is heated, wherein means are provided to move the substrate holder 12 together with the support ring carried by him 20 and the support ring 20 carried by the substrate 10 in a rotation about a figure axis of the substrate holder 12.
• a device which is characterized in that the broad side plane 15 'merges, forming a chamfer 16, into an inner side 18 of the pocket 17 extending in particular along an inner cylinder jacket surface, wherein it is provided in particular that the surface the height of the chamfer 16 extending in the same direction is greater than a distance of an underside of the support ring 20, in particular a support surface resting on a support flank 13 of the substrate holder 12, and the upper side 26 of the support ring.
• a support ring which is characterized in that the boundary surface 24 merges into the upper side 26 to form a rounded edge 25 or a chamfer 25 '.
• a support ring which is characterized in that the radius R of the rounded edge 25 is at least 0.4 mm, preferably at least 0.5 mm, and / or that a section 24 of the boundary surface extending along an inner cylinder jacket surface is a has in the direction of the surface normal of the support surface 23 extending height a, which is greater than the radius R.

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• Chemical & Material Sciences (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Engineering & Computer Science (AREA)
• Materials Engineering (AREA)
• Metallurgy (AREA)
• Organic Chemistry (AREA)
• Mechanical Engineering (AREA)
• General Chemical & Material Sciences (AREA)
• Inorganic Chemistry (AREA)
• Crystallography & Structural Chemistry (AREA)
• Chemical Vapour Deposition (AREA)
• Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

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• 2018
  • 2018-06-06 DE DE102018113400.2A patent/DE102018113400A1/de active Pending
• 2019
  • 2019-06-04 JP JP2020567849A patent/JP7307100B2/ja active Active
  • 2019-06-04 EP EP19729690.8A patent/EP3802909A1/de active Pending
  • 2019-06-04 KR KR1020217000084A patent/KR20210018416A/ko not_active Application Discontinuation
  • 2019-06-04 US US15/734,736 patent/US20210238740A1/en active Pending
  • 2019-06-04 CN CN201980050051.6A patent/CN112513317B/zh active Active
  • 2019-06-04 WO PCT/EP2019/064392 patent/WO2019233965A1/de unknown
  • 2019-06-05 TW TW108119551A patent/TWI827612B/zh active

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