EP3751316A1 - Radiation-sensing device - Google Patents

Radiation-sensing device Download PDF

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Publication number
EP3751316A1
EP3751316A1 EP20179042.5A EP20179042A EP3751316A1 EP 3751316 A1 EP3751316 A1 EP 3751316A1 EP 20179042 A EP20179042 A EP 20179042A EP 3751316 A1 EP3751316 A1 EP 3751316A1
Authority
EP
European Patent Office
Prior art keywords
radiation
scintillator
layer
substrate
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20179042.5A
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German (de)
English (en)
French (fr)
Inventor
Chih-Hao Wu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Innocare Optoelectronics Corp
Original Assignee
Innolux Corp
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Filing date
Publication date
Application filed by Innolux Corp filed Critical Innolux Corp
Publication of EP3751316A1 publication Critical patent/EP3751316A1/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20181—Stacked detectors, e.g. for measuring energy and positional information
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20187—Position of the scintillator with respect to the photodiode, e.g. photodiode surrounding the crystal, the crystal surrounding the photodiode, shape or size of the scintillator
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/161—Applications in the field of nuclear medicine, e.g. in vivo counting
    • G01T1/164—Scintigraphy
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20186—Position of the photodiode with respect to the incoming radiation, e.g. in the front of, below or sideways the scintillator
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20188—Auxiliary details, e.g. casings or cooling
    • G01T1/2019—Shielding against direct hits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/208—Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section

Definitions

  • the present disclosure relates to a radiation-sensing device, and in particular it relates to a radiation-sensing device having a blocking wall structure or a light-shielding structure.
  • Sensing devices are widely used in various electronic devices. Among them, radiation-sensing devices are widely used in medical diagnostic assisting tools in the forensic sciences. For example, a radiation-sensing device can be applied to the radiography of chest, breast, or the cardiovascular system.
  • Radiographic technology often uses dual-energy imaging technology to obtain a clear image.
  • This technology requires continuous exposure of high-energy and low-energy radiation (such as X-rays) to the human body, and image processing is performed on the images obtained by these two different energies.
  • high-energy and low-energy radiation such as X-rays
  • image processing is performed on the images obtained by these two different energies.
  • the human body is moved during the two exposures of radiations, it will result in blurred images.
  • the current solution includes placing two X-ray array panels in the same radiation flat panel detector, and simultaneously obtaining high-energy and low-energy images in one radiation exposure.
  • the overall thickness and weight of the radiation flat panel detector will increase, and the manufacturing cost will also go up significantly.
  • a radiation-sensing device includes a substrate, a first scintillator layer, a second scintillator layer, and an array layer.
  • the first scintillator is disposed on a first side of the substrate, and includes a plurality of first blocking walls and a plurality of first scintillator elements.
  • the plurality of first scintillator elements are located between the plurality of first blocking walls.
  • the second scintillator layer is disposed on a second side of the substrate, and the second side is opposite to the first side.
  • the array layer is located between the first scintillator layer and the second scintillator layer, and has a plurality of photosensitive elements.
  • a projection of at least one of the plurality of first blocking walls on the substrate overlaps with a projection of at least one of the plurality of photosensitive elements on the substrate.
  • a radiation-sensing device includes a substrate, a first scintillator layer, a second scintillator layer, and an array layer.
  • the first scintillator layer is disposed on a first side of the substrate.
  • the second scintillator layer is disposed on a second side of the substrate, and the second side is opposite to the first side.
  • the array layer is located between the first scintillator layer and the second scintillator layer.
  • the array layer has a plurality of photosensitive elements and at least one light-shielding element.
  • a projection of the at least one light-shielding element on the substrate overlaps with a projection of at least one of the plurality of photosensitive elements on the substrate.
  • the terms “about”, “approximately”, “substantially”, “generally” typically mean +/- 10% of the stated value, or +/- 5% of the stated value, or +/- 3% of the stated value, or +/- 2% of the stated value, or +/- 1% of the stated value, or +/- 0.5% of the stated value.
  • the stated value of the present disclosure is an approximate value. When there is no specific description, the stated value includes the meaning of "about”, “approximately”, “substantially”, “generally”.
  • the terms “the range is from the first value to the second value” and “the range is between the first value and the second value” means that the range includes the first value, the second value, and other values between them.
  • the terms concerning attachments, coupling and the like may refer to the two structures being in direct contact, or may refer to the two structures not being in direct contact and there may be other structures disposed between the two structures, unless specifically defined.
  • the term concerning connecting and interconnecting may also include a case where both structures are movable or both structures are fixed.
  • a radiation-sensing device includes a pixelated scintillator layer or a light-shielding element that is disposed corresponding to parts of the light-sensitive elements. Accordingly, in cases where one radiation array panel is used, clear images of high energy and low energy can be obtained in one radiation irradiation after image processing.
  • FIG. 1A is a schematic cross-sectional structure diagram of a radiation-sensing device 10 in accordance with some embodiments of the present disclosure. It should be understood that, for clear description, FIG. 1A only illustrates some components of the radiation-sensing device 10, and the detailed structures of some components will be further described in subsequent drawings. In addition, in accordance with some embodiments, additional features may be added to the radiation-sensing device 10 described below. In accordance with some embodiments, the radiation-sensing device 10 may include an X-ray sensing device, but it is not limited thereto.
  • the radiation-sensing device 10 includes a substrate 102.
  • the substrate 102 may have a first side 102a and a second side 102b opposite to the first side 102a, that is, the second side 102b is opposing to the first side 102a.
  • the substrate 102 may have a first thickness T 1 .
  • the first thickness T 1 may be in a range from about 1 micrometer ( ⁇ m) to about 200 ⁇ m, or from about 5 ⁇ m to about 80 ⁇ m, but it is not limited thereto.
  • the first thickness T 1 may be 10 ⁇ m, 20 ⁇ m, 30 ⁇ m, 40 ⁇ m, 50 ⁇ m, 60 ⁇ m, or 70 ⁇ m.
  • the first thickness T 1 of the substrate 102 refers to its maximum thickness in a normal direction of the substrate 102 (for example, the Z direction shown in the figure).
  • the substrate 102 includes a rigid material or a flexible material.
  • the material of the substrate 102 may include polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), rubber, glass fiber, other suitable materials, or a combination thereof, but it is not limited thereto.
  • the substrate 102 may include a metal-glass fiber composite plate or a printed circuit board, but it is not limited thereto.
  • the radiation-sensing device 10 includes a first scintillator layer 104, and the first scintillator layer 104 may be disposed on the first side 102a of the substrate 102.
  • the first scintillator layer 104 may convert lower-energy radiation (such as the dotted line shown in the figure, radiation X 1 ) into visible light (such as the solid line shown in the figure, visible light L 1 ).
  • the first scintillator layer 104 may include a plurality of first blocking walls 104A and a plurality of first scintillator elements 104B, and the first scintillator element 104B may be located between the blocking walls 104A.
  • the first scintillator layer 104 is pixelated, in which the first blocking wall 104A and the first scintillator element 104B are spaced from each other (disposed alternately).
  • a physical vapor deposition (PVD) process may be used to form the first blocking wall 104A and the first scintillator element 104B.
  • the physical vapor deposition process may include, for example, a sputtering process, an evaporation process, or a pulsed laser deposition.
  • the chemical vapor deposition process may include, for example, a low pressure chemical vapor deposition (LPCVD) process, a low temperature chemical vapor deposition (LTCVD) process, a rapid thermal chemical vapor deposition (RTCVD) process, and a plasma-enhanced chemical vapor deposition (PECVD) process, or an atomic layer deposition (ALD) process.
  • LPCVD low pressure chemical vapor deposition
  • LTCVD low temperature chemical vapor deposition
  • RTCVD rapid thermal chemical vapor deposition
  • PECVD plasma-enhanced chemical vapor deposition
  • ALD atomic layer deposition
  • the pixelated first scintillator layer 104 may be formed by a patterning process.
  • the patterning process may include a photolithography process and an etching process.
  • the photolithography process may include, but is not limited to, photoresist coating (such as spin coating), soft baking, hard baking, mask alignment, exposure, post-exposure baking, photoresist development, cleaning and drying.
  • the etching process may include a dry etching process or a wet etching process, but it is not limited thereto.
  • the first blocking wall 104A may include a reflective material, air, or a combination thereof. In other words, in some embodiments, the first blocking wall 104A is substantially not existed. In some other embodiments, the reflective material of the first blocking wall 104A may include a material having a high reflectivity (e.g., greater than 90%). In some embodiments, the reflective material of the first blocking wall 104A may include a matrix and high reflection coefficient particles dispersed in the matrix, but it is not limited thereto. In some embodiments, the matrix may include organic resin, glass paste, other suitable materials, or a combination thereof, but it is not limited thereto.
  • the material of the high reflection coefficient particles may include silver (Ag), aluminum (Al), titanium (Ti), titanium dioxide (TiO 2 ), niobium-doped titanium oxide (TNO), zinc oxide (ZnO), zirconium dioxide (ZrO 2 ), or a combination thereof, but it is not limited thereto.
  • a coating of the material of the aforementioned high reflection coefficient particles can also be used as the first blocking wall 104A.
  • the first scintillator element 104B may be formed of a material with radiation-converting properties.
  • the material of the first scintillator element 104B may include cesium iodide (CsI), sodium iodide (Nal), thallium iodide (TlI), gadolinium disulfide (Gd 2 O 2 S), other suitable materials, or a combination thereof, but it is not limited thereto.
  • the radiation-sensing device 10 includes a second scintillator layer 106, and the second scintillator layer 106 may be disposed on the second side 102b of the substrate 102.
  • each of the photosensitive elements 202 may have corresponding radiation and/or visible light around it.
  • the second scintillator layer 106 may convert the radiation that passes through the first scintillator element 104B without being absorbed due to the higher energy (such as the dotted line shown in the figure, the radiation X 2 ) into visible light (such as the solid line shown in the figure, the visible light L 2 ).
  • the second scintillator layer 106 may also convert the radiation that passes through the first blocking wall 104A of the first scintillator layer 104 without being absorbed (such as the radiation X 1 ) into visible light (such as the visible light L 1 ). As shown in FIG. 1A , in some embodiments, the second scintillator layer 106 may be an unpixelated layer.
  • the second scintillator layer 106 may be formed of a material with radiation-converting properties.
  • the material of the second scintillator layer 106 may include cesium iodide (CsI), sodium iodide (Nal), thorium iodide (TlI), gadolinium disulfide (Gd 2 O 2 S), other suitable materials, or a combination thereof, but it is not limited thereto.
  • the material of the first scintillator element 104B may be the same as or different from the material of the second scintillator layer 106.
  • the foregoing physical vapor deposition (PVD) process, chemical vapor deposition (CVD) process, coating process, other suitable process, or a combination thereof may be used to form the second scintillator layer 106.
  • the first scintillator layer 104 (or the first scintillator element 104B) has a second thickness T 2
  • the second scintillator layer 106 has a third thickness T 3
  • the third thickness T 3 of the second scintillator layer 106 may be greater than or equal to the second thickness T 2 of the first scintillator element 104B.
  • the ratio of the third thickness T 3 to the second thickness T 2 may be in a range from 0.5: 1 to 5: 1, or from 2: 1 to 4: 1, for example, 3: 1, but it is not limited thereto.
  • the second thickness T 2 of the first scintillator layer 104 (or the first scintillator element 104B) or the third thickness T 3 of the second scintillator layer 106 refers to its maximum thickness in the normal direction of the substrate 102 (for example, the Z direction shown in the figure).
  • the actual thicknesses of the first scintillator layer 104 and the second scintillator layer 106 can be adjusted according to the wavelength or energy range of the radiation to be absorbed or converted. Generally, the larger the thickness of the scintillator layer is, the higher the energy of the radiation it can absorb.
  • the radiation-sensing device 10 further includes an array layer 200.
  • the array layer 200 is located between the first scintillator layer 104 and the second scintillator layer 106, and the array layer 200 may have a plurality of photosensitive elements 202.
  • the photosensitive elements 202 is disposed on the substrate 102 and is located on the first side 102a of the substrate 102, that is, the photosensitive element 202 and the first scintillator layer 104 are located on the same side of the substrate 102.
  • the array layer 200 may be disposed on the first side 102a or the second side 102b of the substrate 102.
  • the photosensitive element 202 may include a photodiode, but it is not limited thereto.
  • the radiation-sensing device 10 may be, for example, an X-ray sensing device.
  • a photodiode can convert the visible light that is generated by the conversion of the first scintillator layer 104 or the second scintillator layer 106 into an electric charge, store it in a sensing pixel, and then the corresponding electric charge can be read through the turn on or turn off of a driving element 300 (for example, as shown in FIG. 4C ), and the electric charge data is generated and converted it into a digital image through calculation.
  • a part of the photosensitive elements 202 may be disposed corresponding to the first blocking walls 104A.
  • a part of the photosensitive elements 202 in the normal direction of the substrate 102 (for example, the Z direction shown in the figure), a part of the photosensitive elements 202 (for example, the photosensitive element labeled 202a in the figure) may overlap with the first blocking walls 104A.
  • FIG. 1B is a schematic diagram showing projection areas of some elements of the radiation-sensing device 10 (e.g., the photosensitive elements 202 and the first blocking walls 104A in the area A 1 of FIG. 1A ) on the substrate 102 in accordance with some embodiments of the present disclosure.
  • the photosensitive element 202 may have a projection 202P in the normal direction of the substrate 102 (for example, the Z direction shown in the figure), and the first blocking wall 104A may have a projection 104AP on the substrate 102.
  • the projection 104AP of the first blocking wall 104A on the substrate 102 may overlap with the projection 202P of the corresponding photosensitive element 202 on the substrate 102.
  • the projection 202P of a part of the photosensitive elements 202 may be entirely located in the projection 104AP of the first blocking wall 104A.
  • the area of the projection 104AP of the first blocking wall 104A may be greater than or equal to the area of the projection 202P of the photosensitive element 202.
  • the projection 104BP of the first scintillator element 104B on the substrate 102 may also overlap with the projection 202P of the corresponding photosensitive element 202 on the substrate 102.
  • the projection 202P of a part of the photosensitive elements 202 may also be entirely located in the projection 104BP of the first scintillator element 104B.
  • a part of the photosensitive elements 202 may be disposed corresponding to the first scintillator elements 104B.
  • a part of the photosensitive elements 202 e.g., the photosensitive element labeled 202b in the figure
  • overlap may refer to entirely overlap or partially overlap in the normal direction of the substrate 102 (for example, the Z direction shown in the figure).
  • a part of the photosensitive elements 202 can simultaneously receive the visible light L 1 generated by the conversion of the lower energy radiation X 1 through the first scintillator layer 104, and the visible light L 2 generated by the conversion of the higher energy radiation X 2 through the second scintillator layers 106.
  • the received visible light L 1 and visible light L 2 can be processed to generate an image converted from the superposition of higher energy radiation signal and lower energy radiation signal.
  • a part of the photosensitive elements 202 receive at least the visible light L 1 generated by the conversion of the lower energy radiation X 1 through the second scintillator layer 106, and the received visible light L 1 can be processed to generate an image converted from the lower energy radiation signal.
  • a part of the photosensitive elements 202 e.g., the photosensitive element 202a or the photosensitive element 202b
  • image data calculations can be performed and the images of higher energy radiation (e.g., the image of the bone part is clear) and images of lower energy radiation (the image of the tissue part is clear) can be obtained separately.
  • weighted subtraction for signal parameters at specific portions (e.g., bones or tissues) in the image results of higher energy radiation and lower energy radiation and the images of lower energy radiation may be conducted.
  • the signal parameter values of the two image results are multiplied by a specific scaling factor and subtracted to obtain clear images of high energy radiation and low energy radiation, respectively.
  • the radiation has a low to high energy range
  • the energy range of the high energy radiation partially overlaps with the energy range of the low energy radiation
  • “higher energy radiation” means radiation from outside the overlapping range to a high energy range
  • “lower energy radiation” means radiation from a low energy to outside the overlapping range.
  • the present disclosure does not limit the specific numerical ranges of the "higher energy radiation” and the “lower energy radiation” as long as they have the relative relationship defined above.
  • the photosensitive element 202 is separated from the first scintillator layer 104 (or the first scintillator element 104B) by a first distance D 1 , and the photosensitive element 202 is separated from the second scintillator layer 106 by a second distance (not illustrated), which can also be regarded as the thickness of the substrate 102 (i.e. the first thickness T 1 ).
  • the first distance D 1 is less than or equal to the second distance (first thickness T 1 ).
  • the first distance D 1 refers to the minimum distance between the photosensitive element 202 and the first scintillator element 104B
  • the second distance D 2 refers to the minimum distance between the photosensitive element 202 and the second scintillator layer 106.
  • the array layer 200 further includes an insulating structure 204.
  • the insulating structure 204 can package and fix the photosensitive elements 202 on the substrate 102.
  • the photosensitive element 202 may be embedded in the insulating structure 204.
  • the insulating structure 204 may have a single-layer or multi-layer structure.
  • the insulating structure 204 may further include a plurality of insulating layers, such as a first insulating layer 402, a second insulating layer 404, a third insulating layer 406, and a fourth insulating layer 408 as shown in FIG. 4C or FIG. 6C .
  • the detailed structure of the photosensitive element 202 (including the insulating structure 204) in the embodiments of the present disclosure will be further described later.
  • the foregoing physical vapor deposition (PVD) process, chemical vapor deposition (CVD) process, coating process, other suitable process, or a combination thereof may be used to form the insulating structure 204.
  • the radiation-sensing device 10 may optionally include a reflective layer 108, and the reflective layer 108 and the substrate 102 are disposed on two opposite sides of the second scintillator layer 106, respectively.
  • the reflective layer 108 can improve the utilization rate of visible light generated by the first scintillator layer 104 or the second scintillator layer 106.
  • the radiation-sensing device 10 may not have the reflective layer 108 (for example, the embodiments shown in FIG. 2 and FIG. 3 ), thereby improving the resolution of the image.
  • the reflective layer 108 may include a material having a high reflectivity (e.g., greater than 90%).
  • the reflective material of the reflective layer 108 may include a matrix and high reflection coefficient particles dispersed in the substrate, but it is not limited thereto.
  • the matrix may include organic resin, glass paste, other suitable materials, or a combination thereof, but it is not limited thereto.
  • the material of the high reflection coefficient particles may include silver (Ag), aluminum (Al), titanium (Ti), titanium dioxide (TiO 2 ), niobium-doped titanium oxide (TNO), zinc oxide (ZnO), zirconium dioxide (ZrO 2 ), or a combination thereof, but it is not limited thereto.
  • a coating of the material of the aforementioned high reflection coefficient particles can also be used as the reflection layer 108.
  • FIG. 2 is a schematic cross-sectional structure diagram of a radiation-sensing device 20 in accordance with some other embodiments of the present disclosure. It should be understood that the same or similar components or elements in the following context will be denoted by the same or similar reference numerals, and their materials, manufacturing methods and functions are the same as or similar to those described above, and thus they will not be repeated in the following context.
  • the embodiment shown in FIG. 2 is similar to the embodiment shown in FIG. 1A .
  • the difference between them includes that in the radiation-sensing device 20 shown in FIG. 2 , the second scintillator layer 106 may also include a plurality of second blocking walls 106A and a plurality of second scintillator elements 106B, and the second scintillator elements 106B are located between the second blocking walls 106A.
  • the second scintillator layer 106 may be pixelated, in which the second blocking walls 106A and the second scintillator elements 106B are spaced apart from each other (disposed alternately).
  • the second scintillator elements 106B may be disposed corresponding to the photosensitive elements 202.
  • the second scintillator elements 106B overlap with the photosensitive elements 202 in the normal direction of the substrate 102 (for example, the Z direction shown in the figure).
  • the second blocking walls 106A and the photosensitive elements 202 do not overlap, that is, the projection 202P (not illustrated) of the photosensitive element 202 on the substrate 102 is disposed between the projections (not illustrated) of the two adjacent second blocking walls 106A on the substrate 102.
  • the second scintillator element 106B can convert radiation (such as radiation X 2 ) that has passed through the first scintillator element 104B without being absorbed due to higher energy into visible light (such as visible light L 2 ).
  • the second scintillator layer 106 can also convert the radiation (such as radiation X 1 ) that has passed through the first blocking wall 104A of the first scintillator layer 104 without being absorbed into visible light (such as visible light L 1 ).
  • the materials and forming methods of the second blocking wall 106A and the second scintillator element 106B are similar to those of the first blocking wall 104A and the first scintillator element 104B, and thus will not be repeated herein.
  • the number of the first blocking walls 104A and the number of the second blocking walls 106A may be different.
  • the number of the first blocking walls 104A and the second blocking walls 106A refers to the number of the first blocking walls 104A and the second blocking walls in the same cross-section (for example, the XZ plane).
  • the first blocking wall 104A, the second blocking wall 106A, and the photosensitive element 202 need to exist in the cross-section at the same time.
  • FIG. 3 is a schematic cross-sectional structure diagram of a radiation-sensing device 30 in accordance with some other embodiments of the present disclosure.
  • the embodiment shown in FIG. 3 is similar to the embodiment shown in FIG. 1A . the difference between them includes that in the radiation-sensing device 30 shown in FIG. 3 , the first scintillator layer 104 is an unpixelated layer while the second scintillator layer 106 is pixelated.
  • the second scintillator layer 106 includes a plurality of second blocking walls 106A and a plurality of second scintillator elements 106B, that is, the photosensitive elements 202 and the first scintillator layer 104 that is unpixelated are located on the same side of the substrate 102.
  • a part of the photosensitive elements 202 may be disposed corresponding to the second blocking walls 106A.
  • a part of the photosensitive elements 202 (for example, the photosensitive element labeled 202a in the figure) may overlap with the second blocking walls 106A.
  • the projection (not illustrated) of the second blocking wall 106A on the substrate 102 overlaps with the projection 202P (not illustrated) of a part of the photosensitive elements 202 on the substrate 102.
  • a part of the photosensitive elements 202 may be disposed corresponding to the second scintillator elements 106B.
  • a part of the photosensitive elements 202 (for example, labeled 202b in the figure) may overlap with the second scintillator elements 106B.
  • a part of the photosensitive elements 202 (for example, the photosensitive element 202b) can simultaneously receive the visible light L 1 generated by the conversion of the lower energy radiation X 1 through the first scintillator layer 104, and the visible light L 2 generated by the conversion of the higher energy radiation X 2 through the second scintillator layers 106.
  • a part of the photosensitive elements 202 (for example, the photosensitive element 202a) can receive at least the visible light L 1 generated by the conversion of the lower energy radiation X 1 through the first scintillator layer 104.
  • FIG. 4A is a schematic top-view structure diagram of the radiation-sensing device 10 in accordance with some embodiments of the present disclosure.
  • the first blocking walls 104A and the first scintillator elements 104B of the first scintillator layer 104 may be arranged in an alternate manner from each other, but the present disclosure is not limited thereto. It should be understood that, in accordance with some other embodiments, an appropriate arrangement of the first blocking walls 104A and the first scintillator elements 104B may be adjusted according to actual needs.
  • the first blocking wall 104A and the first scintillator element 104B may respectively correspond to one pixel region, but the present disclosure is not limited thereto.
  • FIG. 4B is a schematic top-view structure diagram of the array layer 200 in the area A 2 shown in FIG. 4A in accordance with some embodiments of the present disclosure. It should be understood that, some of the elements (for example, the insulating structure 204) are omitted in FIG. 4B to clearly illustrate the detailed structure of the array layer 200.
  • the array layer 200 may further include a driving element 300 and data lines DL, scanning lines (gate lines) GL, and bias lines BL that are electrically connected to the driving element 300.
  • the photosensitive element 202 can convert light energy into an electronic signal
  • the driving element 300 can read the electronic signal generated by the photosensitive element 202 and control the pixels to be turned on or off.
  • the driving element 300 may include a thin-film transistor (TFT).
  • the data line DL, the scan line GL, and the bias line BL may be electrically connected to the driving element 300 and the photosensitive element 202, respectively, and work together to control the driving element 300 and the photosensitive element 202, i.e. control the pixel area.
  • FIG. 4C is a schematic cross-sectional structure diagram of the radiation-sensing device 10 along a section line D-D' in FIG. 4B in accordance with some embodiments of the present disclosure.
  • FIG. 4C illustrates a cross-sectional structure diagram of an area A 2 ' that corresponds to the area A 2 shown in FIG. 4A .
  • the area A 2 corresponds to a set of photosensitive element 202 and first scintillator element 104B
  • area A 2 ' corresponds to a set of photosensitive element 202 and first blocking wall 104A.
  • the driving element 300 may be disposed on the substrate 102.
  • the driving element 300 may include a gate electrode layer 302, an active layer 304, a drain electrode layer 306, and a source electrode layer 308.
  • the gate electrode layer 302 may be electrically connected to the scan line GL
  • the drain electrode layer 306 may be electrically connected to the data line DL
  • the source electrode layer 308 may be electrically connected to the photosensitive element 202.
  • the material of the gate electrode layer 302 may include, but is not limited to, copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), titanium (Ti), copper alloy, aluminum alloy, molybdenum alloy, tungsten alloy, gold alloy, chromium alloy, nickel alloy, platinum alloy, titanium alloy, other suitable metal materials, or a combination thereof.
  • the material of the active layer 304 may include amorphous silicon, polycrystalline silicon, metal nitride, metal oxide, other suitable materials, or a combination thereof, but it is not limited thereto.
  • the materials of the aforementioned drain electrode layer 306 and source electrode layer 308 may include, but are not limited to, copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), and chromium (Cr), nickel (Ni), platinum (Pt), titanium (Ti), copper alloy, aluminum alloy, molybdenum alloy, tungsten alloy, gold alloy, chromium alloy, nickel alloy, platinum alloy, titanium alloy, other suitable metal materials or a combination thereof.
  • the driving element 300 is a bottom gate thin-film transistor
  • the driving element 300 may be a top gate thin-film transistor in accordance with some other embodiments.
  • the insulating structure 204 in the array layer 200 may further include a first insulating layer 402 and a second insulating layer 404.
  • the first insulating layer 402 may be disposed between the gate electrode layer 302 and the active layer 304, and the second insulating layer 404 may be disposed on the first insulating layer 402.
  • the first insulating layer 402 can serve as a gate dielectric layer.
  • the first insulating layer 402 and the second insulating layer 404 may include silicon oxide, silicon nitride, silicon oxynitride, high-k dielectric material, other suitable dielectric materials or a combination thereof, or inorganic materials, organic materials, or a combination thereof, but are not limited thereto.
  • the high-k dielectric material may include, but is not limited to, a metal oxide, a metal nitride, a metal silicide, a metal aluminate, a zirconium silicate, a zirconium aluminate, or a combination thereof.
  • the inorganic material may include, but is not limited to, silicon nitride, silicon dioxide, silicon oxynitride, or a combination thereof.
  • the organic material may include, but is not limited to, perfluoroalkoxy alkane (PFA), polytetrafluoroethylene (PTFE), fluorinated ethylene propylene (FEP), polyethylene or a combination thereof.
  • the photosensitive element 202 may include a first electrode 310, a second electrode 312, and a semiconductor layer 314, and the semiconductor layer 314 may be disposed between the first electrode 310 and the second electrode 312.
  • the source electrode layer 308 may be electrically connected to the photosensitive element 202.
  • the second electrode 312 of the photosensitive element 202 may be electrically connected to the driving element 300 through a via V 1 .
  • the first electrode 310 of the photosensitive element 202 may be electrically connected to the bias line BL through a via V 2 .
  • the via V 1 shown in the figure does not overlap with the photosensitive element 202 in the normal direction of the substrate 102, the via V 1 may overlap with the photosensitive element 202 in accordance with some other embodiments.
  • the via V 1 may be disposed directly below the photosensitive element 202.
  • the thickness of the second insulating layer 404 needs to be increased.
  • the semiconductor layer 314 may have an n-i-p structure or a pi-n structure.
  • the p-type semiconductor layer material may include amorphous silicon semiconductor that is doped with group III elements, such as boron, aluminum, gallium, or other suitable doping elements, but it is not limited thereto.
  • the n-type semiconductor layer material may include amorphous silicon semiconductor that is doped with group V elements, such as nitrogen, phosphorus, arsenic, or other suitable doping elements or combinations thereof, but it is not limited thereto.
  • the materials of the first electrode 310 and the second electrode 312 may include, but are not limited to, a metal conductive material, a transparent conductive material, or a combination thereof.
  • the metal conductive materials may include, but is not limited to, copper (Cu), aluminum (Al), tungsten (W), titanium (Ti), gold (Au), platinum (Pt), nickel (Ni), copper alloy, aluminum alloy, tungsten alloy, titanium alloys, gold alloys, platinum alloys, nickel alloys, or a combination thereof.
  • the transparent conductive material may include a transparent conductive oxide (TCO).
  • the transparent conductive oxide may include, but is not limited to, indium tin oxide (ITO), tin oxide (SnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), antimony tin oxide (ATO), antimony zinc oxide (AZO) or a combination thereof.
  • ITO indium tin oxide
  • SnO tin oxide
  • ZnO zinc oxide
  • IZO indium zinc oxide
  • IGZO indium gallium zinc oxide
  • ITZO indium tin zinc oxide
  • ATO antimony tin oxide
  • AZO antimony zinc oxide
  • the array layer 200 may further include a third insulating layer 406 and a fourth insulating layer 408.
  • the third insulating layer 406 may be disposed on the photosensitive element 202, and the fourth insulating layer 408 may be disposed on the third insulating layer 406.
  • the materials of the third insulating layer 406 and the fourth insulating layer 408 are similar to that of the aforementioned first insulating layer and second insulating layer, and thus will not be repeated herein.
  • the first blocking wall 104A and the first scintillator element 104B may be disposed on the fourth insulating layer 408.
  • the first blocking wall 104A and the first scintillator element 104B overlap with the two corresponding photosensitive elements 202, respectively.
  • the first blocking wall 104A and the first scintillator element 104B overlap with the semiconductor layers 314 of the two corresponding photosensitive elements 202, respectively.
  • the projection 202P of the photosensitive element 202 on the substrate 102 shown in FIG. 1B can be regarded as the projection of the semiconductor layer 314 on the substrate 102.
  • the first blocking wall 104A and the first scintillator element 104B may overlap or not overlap the driving element 300.
  • the area of the first blocking wall 104A or the first scintillator element 104B may be equal to or smaller than the area of the pixel region, which is not limited in the present disclosure.
  • the first blocking wall 104A and the first scintillator element 104B may have different arrangements. Specifically, refer to FIGs. 5A to 5F , which are schematic top-view structure diagrams of the radiation-sensing device in accordance with some other embodiments of the present disclosure.
  • the first blocking walls 104A and the first scintillator elements 104B may be alternately arranged in a row or in a column.
  • the first blocking walls 104A or the first scintillator elements 104B in the same row may correspond to the pixel regions in the same row, but the present disclosure is not limited thereto.
  • the pixel region may include one photosensitive element 202 and one driving element 300, but the present disclosure is not limited thereto.
  • the pixel region may include a combination of one photosensitive element 202 and a plurality of driving elements 300.
  • the first scintillator elements 104B may be dispersed in the first blocking wall 104A, and the first blocking wall 104A may be disposed around the first scintillator elements 104B.
  • each first scintillator element 104B may correspond to one pixel region, and the first blocking wall 104A may correspond to a plurality of pixel regions, such as adjacent pixel regions, but the present disclosure is not limited thereto.
  • the first scintillator element 104B has a quadrangular shape with equal sides, but the present disclosure is not limited thereto. It should be understood that according to different embodiments, the first scintillator element 104B may have any suitable shape according to actual needs. For example, as shown in FIGs. 5C to 5F , in some embodiments, the first blocking wall 104A and the first scintillator element 104B may have quadrangular shapes with four sides that are not equal.
  • the first blocking wall 104A and the first scintillator element 104B may have a quadrangular shape whose side length in a longitudinal direction (e.g., the Y direction) is greater than the side length in a lateral direction (e.g., the X direction).
  • the first blocking wall 104A and the first scintillator element 104B may have a quadrangular shape whose side length in a lateral direction (e.g., the X direction) is greater than the side length in a longitudinal direction (e.g., the Y direction).
  • FIG. 5C and FIG. 5D the first blocking wall 104A and the first scintillator element 104B may have a quadrangular shape whose side length in a longitudinal direction (e.g., the Y direction) is greater than the side length in a lateral direction (e.g., the Y direction).
  • each of the first scintillator element 104B and the first blocking wall 104A may correspond to a pixel region, but the present disclosure is not limited thereto.
  • two adjacent first blocking walls 104A, two adjacent first scintillator elements 104B, or two adjacent first blocking walls 104A and first scintillator elements 104B may form a quadrangular shape with four equal sides (e.g., area A 3 as shown in the figure).
  • FIG. 6A is a schematic cross-sectional structure diagram of a radiation-sensing device 40 in accordance with some other embodiments of the present disclosure.
  • the first scintillator layer 104 and the second scintillator layer 106 may both be unpixelated.
  • the array layer 200 may further include a light-shielding element 502.
  • the light-shielding element 502 may be disposed on a part of the light-sensitive elements 202.
  • the light-shielding element 502 is disposed between the first scintillator layer 104 and the photosensitive element 202.
  • the light-shielding element 502 is disposed between the second scintillator layer 106 and the photosensitive element 202.
  • the first scintillator layer 104 may convert lower energy radiation (such as the radiation X 1 shown in the figure) into visible light (such as the visible light L 1 shown in the figure).
  • the second scintillator layer 106 can convert the radiation (such as the radiation X 2 shown in the figure) that passes through the first scintillator layer 104 without being absorbed due to higher energy into visible light (such as the visible light L 2 shown in the figure).
  • the light-shielding element 502 may be disposed corresponding to a part of the photosensitive elements 202. In other words, in some embodiments, in the normal direction of the substrate 102 (for example, the Z direction shown in the figure), the light-shielding element 502 may overlap with a part of the photosensitive elements 202 (for example, the photosensitive element labeled 202a in the figure).
  • FIG. 6B is a schematic diagram showing projection areas of some elements of the radiation-sensing device 40 (e.g., the light-sensitive element 202 and the light-shielding element 502 in the area A 4 in FIG. 6A ) on the substrate 102 in accordance with some embodiments of the present disclosure.
  • the photosensitive element 202 may have a projection 202P on the substrate 102
  • the light-shielding element 502 may have a projection 502P on the substrate 102.
  • the projection 502P of the light-shielding element 502 on the substrate 102 may overlap with the projection 202P of a part of the photosensitive elements 202 on the substrate 102.
  • the projection 202P of a part of the light sensitive elements 202 may be entirely located in the projection 502P of the light-shielding element 502.
  • the area of the projection 502P of the light-shielding element 502 is greater than or equal to the area of the projection 202P of the light sensitive element 202.
  • the projection 202P of the photosensitive element 202 on the substrate 102 shown in FIG. 6B can be regarded as the projection of the semiconductor layer 314 on the substrate 102.
  • the first scintillator layer 104 may convert lower energy radiation (such as the radiation X 1 shown in the figure) into visible light (such as the visible light L 1 shown in the figure).
  • the second scintillator layer 106 can convert the radiation (such as the radiation X 2 shown in the figure) that passes through the first scintillator layer 104 without being absorbed by the second scintillator layer 104 due to its high energy into visible light (such as the visible light L 2 shown in the figure).
  • the projection 502P of the light-shielding element 502 on the substrate 102 overlaps with the projection 202P of a part of the photosensitive elements 202 (e.g., the photosensitive element 202a) on the substrate 102. That is, a part of the light-sensitive elements 202 may be disposed corresponding to the light-shielding elements 502.
  • a part of the photosensitive elements 202 can simultaneously receive the visible light L 1 generated by the conversion of the lower energy radiation X 1 through the first scintillator layer 104, and the visible light L 2 generated by the conversion of the higher energy radiation X 2 through the second scintillator layer 106.
  • the received visible light L 1 and visible light L 2 can be processed to generate an image converted from the superposition of higher energy radiation signal and lower energy radiation signal.
  • a part of the light-sensitive elements 202 receive at least the visible light L 2 generated by the conversion of higher energy radiation X 2 through the second scintillator layer 106.
  • the received visible light L 2 can be processed to generate an image converted from the higher energy radiation signal.
  • a part of the photosensitive elements 202 e.g., the photosensitive element 202a or the photosensitive element 202b
  • FIG. 6C is a schematic cross-sectional structure diagram of the radiation-sensing device 40 along the section line D-D' in FIG. 4B in accordance with some other embodiments of the present disclosure.
  • FIG. 6C illustrates a schematic cross-sectional structure diagram of two sets of photosensitive elements 202 (e.g., the photosensitive elements 202b) corresponding to the light-shielding elements 502 in the area A 4 shown in FIG. 6A . As shown in FIG.
  • the light-shielding element 502 (e.g., the light-shielding element 502a) may be disposed on the insulating structure 204 (e.g., the third insulating layer 406) of the array layer 200. In some embodiments, the light-shielding element 502 (e.g., the light-shielding element 502a) may overlap the driving element 300. In some embodiments, the light-shielding element 502 may be disposed at any position between the light sensitive element 202 and the first scintillator layer 104.
  • the light-shielding element 502 may include a material having a light-shielding property.
  • the light-shielding element 502 may be formed of a material having a high reflectivity or a low reflectivity.
  • the material of the light-shielding element 502 may include a black photoresist or a white photoresist.
  • the light-shielding element 502 may include an organic resin, a glass paste, other suitable materials, or a combination thereof, but it is not limited thereto.
  • the material of the light-shielding element 502 may include a conductive material, for example, a metal conductive material.
  • the metal conductive material may include, but is not limited to, copper (Cu), aluminum (Al), tungsten (W), titanium (Ti), gold (Au), platinum (Pt), nickel (Ni), copper alloy, aluminum alloy, tungsten alloy, titanium alloy, gold alloy, platinum alloy, nickel alloy, or a combination thereof.
  • the bias line BL that is electrically connected to the first electrode 310 may be used as the light-shielding element 502b.
  • the bias line BL may extend in a direction (for example, the X direction) and overlap the photosensitive element 202 in the normal direction of the substrate 102.
  • the embodiment shown in FIG. 6C includes two types of light-shielding elements (i.e. light-shielding element 502a and light-shielding element 502b) at the same time, in accordance with different embodiments, according to the design requirements, the additional light-shielding element (e.g., light-shielding element 502a) may be used alone, or the bias line BL (e.g., light-shielding element 502b) may be used alone as the light-shielding element, or they may be used in combination.
  • the additional light-shielding element e.g., light-shielding element 502a
  • the bias line BL e.g., light-shielding element 502b
  • the foregoing physical vapor deposition (PVD) process, chemical vapor deposition (CVD) process, coating process, other suitable process, or a combination thereof may be used to form the light-shielding element 502.
  • the light-shielding element 502 can be formed by a patterning process.
  • FIGs. 7A to 7C are schematic diagrams of the driving circuit of the radiation-sensing device in accordance with some embodiments of the present disclosure.
  • the driving element 300 and the photosensitive element 202 may be controlled using the driving manner of one data line DL and one scanning line GL (1D1G).
  • an area formed by the intersection of the data lines DL and the scan lines GL may correspond to one pixel region.
  • the driving element 300 and the photosensitive element 202 may be independently controlled by zones using the driving manner of one data line DL and two scan lines GL (e.g., 1D2G, shown in FIG.
  • the arrangement of the data lines DL can be reduced, thereby reducing the manufacturing cost.
  • the arrangement of the scan lines GL can be increased, thereby increasing the signal reading speed.
  • the driving circuit or driving manner of the radiation-sensing device is not limited to those described above. According to the arrangement of the first blocking wall 104A and the first scintillator element 104B or the arrangement of the light-shielding element 502, the suitable driving circuit or driving manner can be adjusted accordingly.
  • the provided radiation-sensing device includes the pixelated scintillator layer, the light-shielding element disposed corresponding to a part of the light-sensitive elements, or a combination thereof. Accordingly, in cases where one radiation array panel is used, clear images of high energy and low energy can be obtained at the same time in one radiation irradiation.
  • the radiation-sensing device provided in the embodiments of the present disclosure has a single-piece structure, thereby reducing the overall weight of the radiation-sensing device or improving its mechanical strength.

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