EP3671816A4 - Procédé et dispositif d'évaluation de la forme du bord d'une tranche de silicium, tranche de silicium, et procédé de sélection et procédé de fabrication associés - Google Patents

Procédé et dispositif d'évaluation de la forme du bord d'une tranche de silicium, tranche de silicium, et procédé de sélection et procédé de fabrication associés Download PDF

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Publication number
EP3671816A4
EP3671816A4 EP18846345.9A EP18846345A EP3671816A4 EP 3671816 A4 EP3671816 A4 EP 3671816A4 EP 18846345 A EP18846345 A EP 18846345A EP 3671816 A4 EP3671816 A4 EP 3671816A4
Authority
EP
European Patent Office
Prior art keywords
silicon wafer
evaluation
manufacturing
edge shape
evaluation device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18846345.9A
Other languages
German (de)
English (en)
Other versions
EP3671816A1 (fr
Inventor
Masahiro Sakurada
Makoto Kobayashi
Takeshi Kobayashi
Koichi Kanaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority claimed from PCT/JP2018/028167 external-priority patent/WO2019035336A1/fr
Publication of EP3671816A1 publication Critical patent/EP3671816A1/fr
Publication of EP3671816A4 publication Critical patent/EP3671816A4/fr
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • G01N21/9503Wafer edge inspection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/24Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02021Edge treatment, chamfering
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Immunology (AREA)
  • Ceramic Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
EP18846345.9A 2017-08-15 2018-07-27 Procédé et dispositif d'évaluation de la forme du bord d'une tranche de silicium, tranche de silicium, et procédé de sélection et procédé de fabrication associés Pending EP3671816A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017156723 2017-08-15
JP2017197880A JP6750592B2 (ja) 2017-08-15 2017-10-11 シリコンウエーハのエッジ形状の評価方法および評価装置、シリコンウエーハ、ならびにその選別方法および製造方法
PCT/JP2018/028167 WO2019035336A1 (fr) 2017-08-15 2018-07-27 Procédé et dispositif d'évaluation de la forme du bord d'une tranche de silicium, tranche de silicium, et procédé de sélection et procédé de fabrication associés

Publications (2)

Publication Number Publication Date
EP3671816A1 EP3671816A1 (fr) 2020-06-24
EP3671816A4 true EP3671816A4 (fr) 2021-04-28

Family

ID=65637812

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18846345.9A Pending EP3671816A4 (fr) 2017-08-15 2018-07-27 Procédé et dispositif d'évaluation de la forme du bord d'une tranche de silicium, tranche de silicium, et procédé de sélection et procédé de fabrication associés

Country Status (7)

Country Link
US (1) US11486833B2 (fr)
EP (1) EP3671816A4 (fr)
JP (1) JP6750592B2 (fr)
KR (1) KR102520902B1 (fr)
CN (1) CN111033707B (fr)
SG (1) SG11202000800VA (fr)
TW (1) TWI784034B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101992778B1 (ko) * 2017-11-01 2019-06-25 에스케이실트론 주식회사 웨이퍼 및 그 형상 분석 방법
CN110057316A (zh) * 2019-04-25 2019-07-26 华南理工大学 一种基于无人机图像识别的建筑塔机杆件屈曲监测的方法
DE102019206797B4 (de) * 2019-05-10 2022-03-10 Carl Zeiss Industrielle Messtechnik Gmbh Verfahren und Vorrichtung zur Bestimmung einer Faseneigenschaft einer Werkstückfase sowie Programm
CN113611624B (zh) * 2021-07-30 2024-07-30 上海超硅半导体股份有限公司 一种硅片的夹具损伤的预测方法及装置、硅片
EP4290554A3 (fr) 2023-10-26 2024-05-22 Siltronic AG Paramétrage de l'arrondi d'un disque de matériau semi-conducteur

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2033739A1 (fr) * 2006-06-08 2009-03-11 Shin-Etsu Handotai Co., Ltd. Procédé de production de plaquette
EP3089202A1 (fr) * 2013-12-24 2016-11-02 LG Siltron Incorporated Procédé et appareil permettant d'analyser la forme d'une plaquette

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2825048B2 (ja) * 1992-08-10 1998-11-18 信越半導体株式会社 半導体シリコン基板
JP3197253B2 (ja) * 1998-04-13 2001-08-13 株式会社日平トヤマ ウエーハの面取り方法
CN100339969C (zh) * 2000-11-16 2007-09-26 信越半导体株式会社 晶片形状评价法、装置及器件制造法,晶片及晶片挑选法
JP4162892B2 (ja) * 2002-01-11 2008-10-08 日鉱金属株式会社 半導体ウェハおよびその製造方法
JP2004281609A (ja) * 2003-03-14 2004-10-07 Renesas Technology Corp 半導体ウエハ
JP3534115B1 (ja) * 2003-04-02 2004-06-07 住友電気工業株式会社 エッジ研磨した窒化物半導体基板とエッジ研磨したGaN自立基板及び窒化物半導体基板のエッジ加工方法
JP2007329391A (ja) * 2006-06-09 2007-12-20 Disco Abrasive Syst Ltd 半導体ウェーハの結晶方位指示マーク検出機構
US8454852B2 (en) 2007-01-31 2013-06-04 Shin-Etsu Handotai Co., Ltd. Chamfering apparatus for silicon wafer, method for producing silicon wafer, and etched silicon wafer
JP2009168634A (ja) 2008-01-16 2009-07-30 Kobelco Kaken:Kk 形状測定方法,形状測定装置
JP2009222516A (ja) * 2008-03-14 2009-10-01 Raytex Corp 端部検査装置、及び、端部検査方法
JP5621702B2 (ja) * 2011-04-26 2014-11-12 信越半導体株式会社 半導体ウェーハ及びその製造方法
JP6035982B2 (ja) * 2012-08-09 2016-11-30 株式会社Sumco エピタキシャルシリコンウェーハの製造方法およびエピタキシャルシリコンウェーハ
JP6191534B2 (ja) * 2014-05-01 2017-09-06 信越半導体株式会社 ウエハのそりの評価方法及びウエハの選別方法
JP6045542B2 (ja) * 2014-09-11 2016-12-14 信越半導体株式会社 半導体ウェーハの加工方法、貼り合わせウェーハの製造方法、及びエピタキシャルウェーハの製造方法
JP2016165768A (ja) * 2015-03-09 2016-09-15 信越半導体株式会社 ウェーハの面取り加工装置及びウェーハの面取り加工方法
JP6528527B2 (ja) * 2015-04-27 2019-06-12 株式会社Sumco ツルーアーの製造方法および半導体ウェーハの製造方法、ならびに半導体ウェーハの面取り加工装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2033739A1 (fr) * 2006-06-08 2009-03-11 Shin-Etsu Handotai Co., Ltd. Procédé de production de plaquette
EP3089202A1 (fr) * 2013-12-24 2016-11-02 LG Siltron Incorporated Procédé et appareil permettant d'analyser la forme d'une plaquette

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"SEMI M73-0309: TEST METHODS FOR EXTRACTING RELEVANT CHARACTERISTICS FROM MEASURED WAFER EDGE PROFILES", SEMI, 3081 ZANKER ROAD, SAN JOSE, CA 95134, USA, March 2009 (2009-03-01), XP040460781 *

Also Published As

Publication number Publication date
CN111033707A (zh) 2020-04-17
JP6750592B2 (ja) 2020-09-02
KR20200035407A (ko) 2020-04-03
SG11202000800VA (en) 2020-02-27
CN111033707B (zh) 2023-09-05
TW201921537A (zh) 2019-06-01
EP3671816A1 (fr) 2020-06-24
KR102520902B1 (ko) 2023-04-13
TWI784034B (zh) 2022-11-21
JP2019036700A (ja) 2019-03-07
US20200240929A1 (en) 2020-07-30
US11486833B2 (en) 2022-11-01

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