EP3563412A1 - Module électronique, procédé - Google Patents

Module électronique, procédé

Info

Publication number
EP3563412A1
EP3563412A1 EP17837966.5A EP17837966A EP3563412A1 EP 3563412 A1 EP3563412 A1 EP 3563412A1 EP 17837966 A EP17837966 A EP 17837966A EP 3563412 A1 EP3563412 A1 EP 3563412A1
Authority
EP
European Patent Office
Prior art keywords
cement
aluminum nitride
cement composite
nitride particles
electronic module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP17837966.5A
Other languages
German (de)
English (en)
Inventor
Bernd Rometsch
Georg Hejtmann
Martin Rittner
Stefan Kaessner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP3563412A1 publication Critical patent/EP3563412A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the invention relates to an electronic module, in particular power module, with at least one electrical / electronic component and with a housing at least partially surrounding the housing, wherein the housing
  • cement composite is made, and wherein the cement composite comprises cement and at least one particulate filler.
  • the invention relates to a method for producing such
  • Semiconductor module having at least one semiconductor device, which is covered by a coating material consisting of cement.
  • the encapsulant has a filler in the form of aluminum nitride particles or aluminum oxide particles and thus forms a cement composite.
  • the document US 2004/0105980 A1 describes particles which may have a particle core and a multiplicity of coatings enveloping the particle core.
  • the particulate filler is provided that the particulate filler
  • Aluminum nitride particles protected in the cement can be arranged / integrated so that the thermal conductivity of the aluminum nitride particles (thermal conductivity Aluminum nitride: 180 W / mK) can be used to increase the thermal conductivity of the aluminum nitride particles (thermal conductivity Aluminum nitride: 180 W / mK) can be used to increase the thermal conductivity of the aluminum nitride particles (thermal conductivity Aluminum nitride: 180 W / mK) can be used to increase the thermal conductivity of the
  • Aluminum nitride does not react with the cement due to the coating with alumina and thereby dissolves or decomposes. The heightened
  • Thermal conductivity of the cement composite ensures particularly effective heat conduction. If the temperature of a component, for example a transistor, which is enclosed in particular by a housing made of cement composite increases during operation, for example due to power losses during a switching operation, the resulting heat is quickly and reliably dissipated from the component into the cement composite.
  • the filler is evenly distributed in the cement composite.
  • the advantage here is that the thermal conductivity is the same everywhere in the cement composite. This ensures optimum heat conduction from the component into the cement composite.
  • the filler is a granulate or powder.
  • the advantage here is that the filler is easily introduced into the cement and miscible with it.
  • an amount of the filler which is to be introduced into the cement can thus be determined or metered in a simple manner. This ensures accurate meterability of the filler in the cement.
  • the filler in particular the aluminum nitride particles, preferably has at least substantially a spherical shape.
  • the filler is formed void-free in order to avoid entrapment of gas, which in particular can react with the cement in a critical way.
  • the diameter of the aluminum nitride particles themselves or of the aluminum nitride particles, which additionally have the coating of aluminum oxide is at least ⁇ , ⁇ and at most 500 ⁇ .
  • the layer thickness of the coating of aluminum oxide is preferably at least lnm and at most 100 nm.
  • the filler is present as a suspension.
  • the cement or a matrix of the cement composite is made of inorganic material. The advantage here is that the cement or the matrix of the cement composite can be produced cost-effectively and in a simple manner.
  • Inorganic material is preferably cement, for example alumina cement, phosphate cement or Portland cement.
  • the cement or the matrix of the cement composite additionally comprises at least one inorganic additive, for example sand or stone.
  • At least one further filler in particular nitridic ceramic particles or silicon carbide particles, is introduced into the cement composite.
  • Cement composites are specifically adjustable or configurable.
  • a physical property is in particular the thermal conductivity or
  • Thermal conductivity which is configurable by nitridic ceramic particles, such as boron nitride or silicon nitride.
  • nitridic ceramic particles such as boron nitride or silicon nitride.
  • Another property is, for example, a hardness of the cement composite, in particular a
  • the further fillers also have a
  • the housing is associated with at least one heat sink.
  • the advantage here is that overheating of the component is avoided by the heat sink during operation of the component, so that a stable operation of the component is ensured.
  • the heat sink preferably releases the heat produced during operation of the component by heat conduction (conduction) and / or convection to an ambient medium, for example air or water. Alternatively or additionally, the heat sink releases the heat produced by thermal radiation to the surrounding medium.
  • the heat sink preferably has a material with a high thermal conductivity, for example copper. So that the heat sink can deliver or dissipate the heat effectively, it preferably has cooling fins. These increase one
  • the component is preferably arranged on a substrate, for example a ceramic substrate.
  • the heat sink is preferably arranged on a side of the substrate opposite the component and in particular connected to the substrate by means of a joining material, for example a metallic soft solder material or a polymeric TIM material.
  • the heat sink is designed as a coolant channel and extends through the cement composite in such a way that in its longitudinal extent it is completely separated from the part
  • the coolant channel due to its extension through the cement composite or its integration into the cement composite absorbs heat particularly effectively and thus advantageously cools the electronic module.
  • the coolant channel is positively connected by integration into the cement composite and / or materially connected to the cement composite.
  • the coolant channel is a copper tube, which is flowed through by a cooling liquid, for example water, or a cooling gas, for example air, or can be flowed through. Since the coolant channel is only partially completely surrounded by the cement composite, the areas not surrounded by cement composite are in particular assigned to the surrounding medium. This ensures that the coolant channel can be cooled by the surrounding medium, resulting in a heat release from the component to the
  • the coolant channel is arranged completely in the cement composite. It is preferably provided that the electronic module has a plurality of heat sinks, for example a heat sink connected to the substrate and a coolant channel integrated in the cement composite. Preferably, the coolant channel is formed meander-shaped. As an alternative or in addition, the coolant channel preferably gives off the heat produced during operation of the component
  • Base mass and / or the at least one additive, added to this Base mass and / or the at least one additive, added to this.
  • the housing is assigned at least one heat sink.
  • the heat sink is encapsulated with cement composite in a casting over of the component. This ensures a positive and / or cohesive and thus stable connection of the heat sink or the
  • Coolant channel with the cement composite Coolant channel with the cement composite.
  • the aluminum nitride particles are oxidized with a coating of aluminum oxide only for the purpose of providing the aluminum nitride particles. This results in a particularly simple and inexpensive process to provide the aluminum nitride particles with a coating.
  • the aluminum nitride particles are oxidized with a coating of aluminum oxide only for the purpose of providing the aluminum nitride particles.
  • Claim 11 for providing the aluminum nitride particles with a coating only of alumina the alumina is applied by means of a deposition process on the aluminum nitride particles.
  • the advantage here is that it is possible to apply predefinable layer thicknesses of aluminum oxide to the aluminum nitride particles.
  • deposition process is in particular a
  • a deposition process is a chemical vapor deposition or a physical one
  • Coating process include, for example, evaporation methods such as electron beam evaporation methods.
  • FIG. 2 shows an electronic module with a housing, which at least one
  • Heatsink is assigned in a simplified representation
  • Figure 3 is an overview diagram for carrying out the method according to an advantageous embodiment.
  • FIG. 1 shows in a simplified representation a cement composite 1 which comprises cement 18 and a particulate filler 2.
  • the particulate filler 2 comprises aluminum nitride particles 3, each having a coating of only alumina 4.
  • the aluminum nitride particles 3 are preferably spherical and cavity-free.
  • the diameter of the aluminum nitride particles 3 or the aluminum nitride particles 3, which have a coating of aluminum oxide 4, is preferably at least ⁇ , ⁇ and at most 500 ⁇ .
  • the alumina 4 preferably has a layer thickness of at least lnm and at most 100 nm.
  • the coating with alumina 4 prevents the aluminum nitride particles 3 in the cement 18 from decomposing and dissolving. This ensures that the thermal properties, in particular the high thermal conductivity of 180 W / mK of aluminum nitride are advantageous for the thermal conductivity of the
  • Cement composites 1 can be used.
  • the filler 2 is evenly distributed in the cement 18. This ensures in particular a uniform heat conduction through the cement 18.
  • At least one further filler 5 is introduced into the cement composite 1.
  • Nitridic ceramic particles are, for example, bornite (BN) or silicon nitride (Si 3 N 4 ).
  • FIG. 2 shows an electronic module 6, in particular a power module, with at least one electrical / electronic component 7, for example one Transistor or an inductance, such as a transformer or a coil, and with a component 7 at least partially surrounding housing 8.
  • the housing 8 is made of the cement composite 1.
  • the component 7 is preferably by means of a conductive material 9, for example copper, silver or aluminum, on the one hand with an electrical contact 10, for example a metallic wire, and on the other hand with a substrate 11,
  • the conductive material 9 and the substrate 11 are preferably connected to each other by means of DCB (Direct Copper Bonding) or AMG (Active Metal Brazing).
  • the housing 9 is associated with at least one heat sink 12, 13.
  • the heat sink 12 is preferably a copper body and with the substrate 11 in particular by means of a
  • the joining material is for example a
  • the heat sink 13 is preferably formed as a coolant channel 15 and extends through the cementitious composite 1 so that he in his
  • the coolant channel 15 is preferably meander-shaped. To illustrate the meandering shape, it should be mentioned that the sections 16 go out of the plane of the paper and the sections 17 into the plane of the paper.
  • the coolant channel 13 is a copper tube, which is flowed through by a cooling liquid, for example water, or a cooling gas, for example air.
  • the heat generated during operation of the component 7 can be effectively conducted into the / the heat sink 12, 13.
  • an operating temperature of the component 7 can be increased to temperatures of more than 200 ° C.
  • the use of the / the heat sink 12, 13 ensures that both a cooling by the heat sink 12 and a cooling by the heat sink 13 is possible for the component 7.
  • the coolant channel 15 is provided as a single heat sink 13.
  • FIG. 3 shows a flowchart for carrying out a method for
  • a first step Sl at least one electrical / electronic component 7 is provided.
  • This component 7 is for example a transistor, a choke, a transformer or another power module.
  • a cement 18 or a basic mass of the Zementkoposits 1 is provided.
  • the cement 18 or the basic mass of the cement composite 1 is made of inorganic material.
  • the inorganic material is preferably a cement, for example
  • Alumina cement Portland cement or phosphate cement.
  • Base of the cement composite for example, ceramic, stone, sand and / or minerals.
  • a third step S3 aluminum nitride particles 3 are provided.
  • the aluminum nitride particles 3 are present as granules or powder and preferably have a diameter of at least ⁇ , ⁇ to 500 ⁇ . Alternatively or additionally, it is provided that the filler 2 is present as a suspension.
  • a fourth step S4 the aluminum nitride particles 3 are each provided with a coating of only aluminum oxide 4. The mistake with
  • Alumina 4 is preferably carried out by thermal oxidation of the aluminum nitride particles 3 in air at a temperature of preferably 1200 ° C. Alternatively or additionally, it is provided that by means of a
  • the aluminum nitride particles 3 are coated with alumina 4. This makes it possible, on the one hand, to apply the aluminum oxide 4 with a predefinable layer thickness, preferably from 1 nm to 100 nm, onto the aluminum nitride particles 3. On the other hand, it is thereby possible for a second coating, which has a different material, for example silicon oxide, on the aluminum nitride particles 3 applied.
  • Suitable deposition processes are in particular chemical and / or physical deposition processes, for example a chemical or physical vapor deposition.
  • Alumina 4 provided aluminum nitride particles 3 introduced into the cement composite 1.
  • the aluminum nitride particles 3 or the filler 2 are preferably mixed with the still dry cement 18, in particular the matrix.
  • the filler 2 is castable
  • Cement composition consisting of the matrix and / or at least one additive mixed.
  • the additives and / or the fillers 2 are first mixed together and then with water.
  • a monomodal admixture of the aluminum nitride particles 3 in the cement 18 or a multimodal admixture of the aluminum nitride particles 3 is provided.
  • at least one heat sink 12, 13 is assigned to the housing 8.
  • the heat sink 12, 13 is cast together with the component 7 in the cement composite 1. This ensures that the heat sink 12,13 is materially connected to the cement composite 1.
  • Cement composite 1 surrounded, so as to produce a component 7 at least partially surrounding housing 8.
  • the castable, in particular liquid, cement composite material is set and dried.
  • the component 7 is preferably enclosed by a casting mold, not shown here, which is filled with the pourable cement composite mass. After setting and drying the pourable Zementkompositmasse then the mold of the

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

La présente invention concerne un module électronique (6), en particulier un module de puissance, comprenant au moins un composant électrique/électronique (7) et un boîtier (8) entourant au moins en partie le composant (7). Le boîtier (8) est fabriqué à partir d'une composition en ciment (1) qui comprend au moins une charge (2) sous forme de particules. Selon l'invention, la charge (2) sous forme de particules comprend des particules de nitrure d'aluminium (3) qui présentent chacune un revêtement composé uniquement d'oxyde d'aluminium (4).
EP17837966.5A 2016-12-28 2017-12-22 Module électronique, procédé Pending EP3563412A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016226262.9A DE102016226262A1 (de) 2016-12-28 2016-12-28 Elektronikmodul, Verfahren
PCT/EP2017/084292 WO2018122145A1 (fr) 2016-12-28 2017-12-22 Module électronique, procédé

Publications (1)

Publication Number Publication Date
EP3563412A1 true EP3563412A1 (fr) 2019-11-06

Family

ID=61148173

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17837966.5A Pending EP3563412A1 (fr) 2016-12-28 2017-12-22 Module électronique, procédé

Country Status (8)

Country Link
US (1) US10872833B2 (fr)
EP (1) EP3563412A1 (fr)
JP (1) JP6813685B2 (fr)
KR (1) KR102418086B1 (fr)
CN (1) CN110114873B (fr)
DE (1) DE102016226262A1 (fr)
TW (1) TWI756333B (fr)
WO (1) WO2018122145A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10607919B2 (en) 2017-04-28 2020-03-31 Semiconductor Components Industries, Llc Semiconductor package having junction cooling pipes embedded in substrates
DE102018212159A1 (de) * 2018-07-20 2020-01-23 Robert Bosch Gmbh Aufbau und Verfahren zum Verbinden einer ersten und einer zweiten Baugruppe durch Verkleben
DE102019132314B4 (de) * 2019-11-28 2022-03-03 Infineon Technologies Ag Package mit Einkapselung unter Kompressionsbelastung
CN111725161B (zh) * 2020-06-16 2022-04-22 杰群电子科技（东莞）有限公司 一种半导体散热器件、封装方法及电子产品
US20240006191A1 (en) * 2020-12-23 2024-01-04 Heraeus Materials Singapore Pte. Ltd. Process for the manufacture of encapsulated semiconductor dies and/or of encapsulated semiconductor packages

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2958139A1 (fr) * 2014-06-18 2015-12-23 Heraeus Deutschland GmbH & Co. KG Module semi-conducteur doté d'au moins une matière de gainage recouvrant un module semi-conducteur

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04175209A (ja) * 1990-08-29 1992-06-23 Matsushita Electric Works Ltd 窒化アルミニウム及びその製法
US6822018B2 (en) * 2002-02-15 2004-11-23 Delphi Technologies, Inc. Thermally-conductive electrically-insulating polymer-base material
JP4277134B2 (ja) * 2002-08-15 2009-06-10 国立大学法人東京工業大学 酸化アルミニウム被覆窒化アルミニウムの製造方法
US7560160B2 (en) 2002-11-25 2009-07-14 Materials Modification, Inc. Multifunctional particulate material, fluid, and composition
DE102006028675B4 (de) * 2006-06-22 2008-08-21 Siemens Ag Kühlanordnung für auf einer Trägerplatte angeordnete elektrische Bauelemente
DE102007039916A1 (de) 2007-08-23 2009-02-26 Siemens Ag Aufbau- und Verbindungstechnik von Modulen mittels dreidimensional geformter Leadframes
JP2011111341A (ja) * 2009-11-25 2011-06-09 Panasonic Electric Works Co Ltd 酸化層を有する窒化アルミニウム基板、該基板の製造方法、該基板を用いた回路基板及びｌｅｄモジュール
US9249293B2 (en) * 2010-02-18 2016-02-02 Hitachi Chemical Company, Ltd. Composite particle, method for producing the same, and resin composition
TW201331353A (zh) * 2012-01-17 2013-08-01 Regal Paper Tech Co Ltd 散熱材料、散熱結構、製備方法及其用途
WO2014196347A1 (fr) * 2013-06-07 2014-12-11 信越化学工業株式会社 Feuille composite thermiquement conductrice et structure de dissipation de chaleur
DE102013112267A1 (de) * 2013-11-07 2015-05-07 Heraeus Deutschland GmbH & Co. KG Halbleitermodul mit einer einen Halbleiterbaustein bedeckenden Umhüllungsmasse
WO2015137263A1 (fr) * 2014-03-13 2015-09-17 株式会社トクヤマ Poudre de nitrure d'aluminium présentant une résistance exceptionnelle à l'eau
DE102015102041A1 (de) * 2015-02-12 2016-08-18 Danfoss Silicon Power Gmbh Leistungsmodul

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2958139A1 (fr) * 2014-06-18 2015-12-23 Heraeus Deutschland GmbH & Co. KG Module semi-conducteur doté d'au moins une matière de gainage recouvrant un module semi-conducteur

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DALMAU R ET AL: "X-Ray Photoelectron Spectroscopy Characterization of Aluminum Nitride Surface Oxides: Thermal and Hydrothermal Evolution", JOURNAL OF ELECTRONIC MATERIALS, 1 April 2007 (2007-04-01), Boston, pages 414 - 419, XP055865469, Retrieved from the Internet <URL:https://link.springer.com/content/pdf/10.1007/s11664-006-0044-x.pdf> [retrieved on 20211124], DOI: 10.1007/s11664-006-0044-x *
See also references of WO2018122145A1 *

Also Published As

Publication number Publication date
US20190348338A1 (en) 2019-11-14
KR20190097082A (ko) 2019-08-20
TWI756333B (zh) 2022-03-01
CN110114873B (zh) 2023-04-28
DE102016226262A1 (de) 2018-06-28
TW201826908A (zh) 2018-07-16
WO2018122145A1 (fr) 2018-07-05
US10872833B2 (en) 2020-12-22
CN110114873A (zh) 2019-08-09
JP2020515042A (ja) 2020-05-21
JP6813685B2 (ja) 2021-01-13
KR102418086B1 (ko) 2022-07-07

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