EP3559997A4 - Vertikale transistorvorrichtungen und verfahren - Google Patents
Vertikale transistorvorrichtungen und verfahren Download PDFInfo
- Publication number
- EP3559997A4 EP3559997A4 EP16924285.6A EP16924285A EP3559997A4 EP 3559997 A4 EP3559997 A4 EP 3559997A4 EP 16924285 A EP16924285 A EP 16924285A EP 3559997 A4 EP3559997 A4 EP 3559997A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- techniques
- vertical transistor
- transistor devices
- devices
- vertical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823412—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823487—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/068—Nanowires or nanotubes comprising a junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
- H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78642—Vertical transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
- H10B63/34—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the vertical channel field-effect transistor type
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2016/068600 WO2018118096A1 (en) | 2016-12-24 | 2016-12-24 | Vertical transistor devices and techniques |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3559997A1 EP3559997A1 (de) | 2019-10-30 |
EP3559997A4 true EP3559997A4 (de) | 2020-11-04 |
Family
ID=62627016
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP16924285.6A Withdrawn EP3559997A4 (de) | 2016-12-24 | 2016-12-24 | Vertikale transistorvorrichtungen und verfahren |
Country Status (4)
Country | Link |
---|---|
US (1) | US10964820B2 (de) |
EP (1) | EP3559997A4 (de) |
CN (1) | CN110024133A (de) |
WO (1) | WO2018118096A1 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10964820B2 (en) | 2016-12-24 | 2021-03-30 | Intel Corporation | Vertical transistor devices and techniques |
KR102402945B1 (ko) | 2017-08-31 | 2022-05-30 | 마이크론 테크놀로지, 인크 | 금속 산화물 반도체 디바이스의 접촉을 위한 반도체 디바이스, 트랜지스터, 및 관련된 방법 |
WO2019046629A1 (en) | 2017-08-31 | 2019-03-07 | Micron Technology, Inc. | SEMICONDUCTOR DEVICES, HYBRID TRANSISTORS, AND ASSOCIATED METHODS |
US10297290B1 (en) * | 2017-12-29 | 2019-05-21 | Micron Technology, Inc. | Semiconductor devices, and related control logic assemblies, control logic devices, electronic systems, and methods |
KR102046127B1 (ko) * | 2018-03-30 | 2019-11-19 | 호서대학교 산학협력단 | 수직 구조 박막 트랜지스터의 제조 방법 |
EP3618117B1 (de) * | 2018-08-30 | 2022-05-11 | Nokia Solutions and Networks Oy | Vorrichtung mit einer ersten und einer zweiten schicht aus leitfähigem material und verfahren zur herstellung und zum betrieb solch einer vorrichtung |
US11329133B2 (en) * | 2018-11-20 | 2022-05-10 | Micron Technology, Inc. | Integrated assemblies having semiconductor oxide channel material, and methods of forming integrated assemblies |
EP3736865B1 (de) * | 2019-03-08 | 2023-11-08 | Shenzhen Goodix Technology Co., Ltd. | 1t1r resistiver direktzugriffsspeicher und verfahren zu seiner herstellung |
US11887988B2 (en) | 2019-08-01 | 2024-01-30 | Intel Corporation | Thin film transistor structures with regrown source and drain |
US11328988B2 (en) | 2019-12-27 | 2022-05-10 | Intel Corporation | Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication |
CN113809118A (zh) * | 2020-06-11 | 2021-12-17 | 联华电子股份有限公司 | 一种磁阻式随机存取存储器 |
US11374057B2 (en) * | 2020-06-23 | 2022-06-28 | Taiwan Semiconductor Manufacturing Company Limited | Vertical metal oxide semiconductor channel selector transistor and methods of forming the same |
US11903221B2 (en) * | 2020-08-17 | 2024-02-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three dimensional semiconductor device with memory stack |
CN113053943B (zh) * | 2021-03-18 | 2023-04-18 | 长鑫存储技术有限公司 | 半导体结构及其形成方法 |
JP2022146576A (ja) * | 2021-03-22 | 2022-10-05 | キオクシア株式会社 | 半導体装置及び半導体記憶装置 |
CN113517344A (zh) * | 2021-04-16 | 2021-10-19 | 芯盟科技有限公司 | 晶体管的制造方法、晶体管、基本存储单元、以及动态随机存取存储器 |
CN113517343A (zh) * | 2021-04-16 | 2021-10-19 | 芯盟科技有限公司 | 晶体管的制造方法、晶体管、基本存储单元、以及动态随机存取存储器 |
CN113517345A (zh) * | 2021-04-16 | 2021-10-19 | 芯盟科技有限公司 | 晶体管的制造方法、晶体管、基本存储单元、以及动态随机存取存储器 |
CN113629011A (zh) * | 2021-07-02 | 2021-11-09 | 芯盟科技有限公司 | 半导体器件及其制造方法 |
CN113611666A (zh) * | 2021-07-02 | 2021-11-05 | 芯盟科技有限公司 | 晶体管阵列及其制造方法、半导体器件及其制造方法 |
CN115666130A (zh) * | 2021-07-09 | 2023-01-31 | 长鑫存储技术有限公司 | 半导体结构及其制造方法 |
CN116097921A (zh) * | 2021-08-31 | 2023-05-09 | 长江存储科技有限责任公司 | 具有垂直晶体管的存储器器件及其形成方法 |
WO2023028821A1 (en) * | 2021-08-31 | 2023-03-09 | Yangtze Memory Technologies Co., Ltd. | Memory devices having vertical transistors and methods for forming thereof |
CN115425090A (zh) * | 2022-08-30 | 2022-12-02 | 武汉华星光电技术有限公司 | 薄膜晶体管及其电子器件 |
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US20050282356A1 (en) * | 2004-06-21 | 2005-12-22 | Sang-Yun Lee | Semiconductor layer structure and method of making the same |
US20060169972A1 (en) * | 2005-01-31 | 2006-08-03 | International Business Machines Corporation | Vertical carbon nanotube transistor integration |
EP1804286A1 (de) * | 2005-12-27 | 2007-07-04 | Interuniversitair Microelektronica Centrum | Halbleitervorrichtung mit einer verlängerten Nanostruktur |
US20100112753A1 (en) * | 2003-06-24 | 2010-05-06 | Sang-Yun Lee | Semiconductor memory device |
US20160268382A1 (en) * | 2015-03-13 | 2016-09-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Devices having a semiconductor material that is semimetal in bulk and methods of forming the same |
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AU2003296988A1 (en) * | 2002-12-19 | 2004-07-29 | Matrix Semiconductor, Inc | An improved method for making high-density nonvolatile memory |
US6849905B2 (en) * | 2002-12-23 | 2005-02-01 | Matrix Semiconductor, Inc. | Semiconductor device with localized charge storage dielectric and method of making same |
KR100598099B1 (ko) * | 2004-02-24 | 2006-07-07 | 삼성전자주식회사 | 다마신 게이트를 갖는 수직 채널 핀 전계효과 트랜지스터 및 그 제조방법 |
US20090127608A1 (en) * | 2007-11-20 | 2009-05-21 | Rolf Weis | Integrated circuit and method of manufacturing an integrated circuit |
US8541819B1 (en) * | 2010-12-09 | 2013-09-24 | Monolithic 3D Inc. | Semiconductor device and structure |
US8890119B2 (en) * | 2012-12-18 | 2014-11-18 | Intel Corporation | Vertical nanowire transistor with axially engineered semiconductor and gate metallization |
JP2015173230A (ja) * | 2014-03-12 | 2015-10-01 | 株式会社東芝 | 半導体装置及び半導体装置の製造方法 |
US10573627B2 (en) * | 2015-01-09 | 2020-02-25 | Silicon Genesis Corporation | Three dimensional integrated circuit |
US9646973B2 (en) * | 2015-03-27 | 2017-05-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dual-port SRAM cell structure with vertical devices |
US10964820B2 (en) | 2016-12-24 | 2021-03-30 | Intel Corporation | Vertical transistor devices and techniques |
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2016
- 2016-12-24 US US16/461,522 patent/US10964820B2/en active Active
- 2016-12-24 WO PCT/US2016/068600 patent/WO2018118096A1/en unknown
- 2016-12-24 CN CN201680091057.4A patent/CN110024133A/zh active Pending
- 2016-12-24 EP EP16924285.6A patent/EP3559997A4/de not_active Withdrawn
Patent Citations (5)
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US20050282356A1 (en) * | 2004-06-21 | 2005-12-22 | Sang-Yun Lee | Semiconductor layer structure and method of making the same |
US20060169972A1 (en) * | 2005-01-31 | 2006-08-03 | International Business Machines Corporation | Vertical carbon nanotube transistor integration |
EP1804286A1 (de) * | 2005-12-27 | 2007-07-04 | Interuniversitair Microelektronica Centrum | Halbleitervorrichtung mit einer verlängerten Nanostruktur |
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Non-Patent Citations (1)
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See also references of WO2018118096A1 * |
Also Published As
Publication number | Publication date |
---|---|
EP3559997A1 (de) | 2019-10-30 |
CN110024133A (zh) | 2019-07-16 |
WO2018118096A1 (en) | 2018-06-28 |
US20190348540A1 (en) | 2019-11-14 |
US10964820B2 (en) | 2021-03-30 |
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