EP3495790A1 - Vorrichtung und verfahren zur messung der oberflächentemperatur eines substrats - Google Patents

Vorrichtung und verfahren zur messung der oberflächentemperatur eines substrats Download PDF

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Publication number
EP3495790A1
EP3495790A1 EP17205566.7A EP17205566A EP3495790A1 EP 3495790 A1 EP3495790 A1 EP 3495790A1 EP 17205566 A EP17205566 A EP 17205566A EP 3495790 A1 EP3495790 A1 EP 3495790A1
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EP
European Patent Office
Prior art keywords
thermal radiation
probing light
signal
wavelength
light
Prior art date
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Application number
EP17205566.7A
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English (en)
French (fr)
Inventor
Sylvain Perrot
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Laser Systems and Solutions of Europe SAS
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Laser Systems and Solutions of Europe SAS
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Application filed by Laser Systems and Solutions of Europe SAS filed Critical Laser Systems and Solutions of Europe SAS
Priority to EP17205566.7A priority Critical patent/EP3495790A1/de
Priority to TW107139465A priority patent/TWI705234B/zh
Priority to JP2020528329A priority patent/JP2021505852A/ja
Priority to PCT/EP2018/083376 priority patent/WO2019110524A1/en
Priority to US16/769,391 priority patent/US11454543B2/en
Priority to KR1020207015263A priority patent/KR20200092967A/ko
Publication of EP3495790A1 publication Critical patent/EP3495790A1/de
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/07—Arrangements for adjusting the solid angle of collected radiation, e.g. adjusting or orienting field of view, tracking position or encoding angular position
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0801—Means for wavelength selection or discrimination
    • G01J5/0802—Optical filters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0806—Focusing or collimating elements, e.g. lenses or concave mirrors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0808—Convex mirrors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0818—Waveguides
    • G01J5/0821—Optical fibres
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/084—Adjustable or slidable
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0846—Optical arrangements having multiple detectors for performing different types of detection, e.g. using radiometry and reflectometry channels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0896—Optical arrangements using a light source, e.g. for illuminating a surface
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/59—Radiation pyrometry, e.g. infrared or optical thermometry using polarisation; Details thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/80—Calibration
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J2005/0074—Radiation pyrometry, e.g. infrared or optical thermometry having separate detection of emissivity

Definitions

  • the invention relates to a device for monitoring the surface temperature of a wafer undergoing a thermal processing.
  • the invention relates to a device for monitoring the surface temperature of a wafer submitted to a pulsed light beam by measuring its thermal radiation and its emissivity.
  • a semiconductor wafer is exposed to a pulsed light beam during a process called thermal processing.
  • the surface of the areas exposed to the pulsed light beam is heated above 1000°C during periods lasting from less than one millisecond to less than a microsecond.
  • the high temperature causes the exposed areas to undergo a structural change. Since the extent of the structural changes is dependent on the temperature, it is critical to monitor the temperature accurately.
  • the temperature of the surface of the exposed area is usually calculated based on measurement of its thermal radiation.
  • thermal radiation of a surface depends not only on its temperature, but also on its emissivity. In order to reduce the temperature measurement error, it is therefore necessary to distinguish whether a variation in thermal radiation is due to a real variation in temperature or to a variation in emissivity.
  • Emissivity of a surface depends on its structure. Since thermal processing changes the structure of the surface, the emissivity of the exposed areas is not constant throughout the processing. It is therefore important to measure it as frequently as possible. It is also important to note that emissivity is directional.
  • an optical system collects the thermal radiation and transmits it to a detector.
  • the thermal radiation is measured at a predetermined wavelength, usually in the infrared.
  • another light beam is directed at the exposed area and the reflected light beam - representative of the emissivity - is captured.
  • the wavelength of the other light beam is the same as the predetermined wavelength of thermal radiation.
  • Error in temperature further increases for thermal processing in the microsecond and sub-microsecond range.
  • the pulses of the laser beam exhibit a duration of a few nanoseconds.
  • Devices of the prior art are not able to perform temperature measurements that can follow the evolution of temperature during the exposure to the pulsed light beam.
  • one object of the invention is to provide an apparatus for measuring a surface temperature of a substrate having a substantially planar processed surface, said processed surface being illuminated by a pulsed light beam adapted to heat a treated zone of said processed surface of the substrate, said apparatus comprising:
  • the apparatus is able to measure simultaneously the thermal radiation of the surface of the treated zone and its emissivity.
  • the first routing means are arranged in relation to each other so that the thermal radiation and emissivity of almost the same region of the processed surface are measured, directionality of the emissivity can be taken into account. The error in the temperature calculated based on the thermal radiation and on the emissivity is therefore greatly reduced.
  • the invention also relates to a method for measuring a surface temperature of a substrate having a substantially planar processed surface, said processed surface being illuminated by a pulsed light beam adapted to heat a treated zone of said processed surface of the substrate, said method comprising the steps of:
  • the invention relates to an apparatus 1 for measuring a surface temperature Ts of a substrate 3 having a substantially planar processed surface 5.
  • the apparatus 1 generally operates in a machine environment, such as a semiconductor foundry, consequently, it has to comply with volume limitation and mechanical constraints.
  • the substrate 3 is for example a wafer. It typically is a silicon wafer or a compound wafer, such as commonly used in the semiconductor devices industries.
  • the substrate 3 is placed in a process chamber 2 adapted for thermal processing.
  • the substrate 3 may be arranged on a moveable platform 6.
  • the moveable platform may be able to move in the X direction and in the Y direction to allow thermal processing of the whole substrate 3.
  • the substrate 3 has a processed surface 5 that is able to receive various treatments in order to obtain the desired semiconductor device.
  • the processed surface 5 is substantially plane (at the macroscopic scale), yet it presents some surface roughness (at the microscopic scale).
  • the roughness of the processed surface 5 depends on the treatment it previously received. Furthermore, thermal processing of the surface may change the physical properties of the material of the processed surface 5, in particular its optical properties. The physical properties changes especially occur during a phase transition of the processed surface 5. As a consequence, the emissivity of the processed surface 5 changes throughout the process.
  • the substrate 3 supports an array of dies 4 on its processed surface 5.
  • Each die 4 comprises a plurality of semiconductor devices, and each of the dies may have its own emissivity.
  • the apparatus 1 comprises a light source 7 that emits a pulsed light beam 9 along an optical axis A1.
  • the light source 7 is for example a Ultra-Violet (UV) source.
  • the light source 7 is preferably an excimer laser light source.
  • a preferred wavelength of emission is for instance 308 nm.
  • the light source 7 is able to operate in pulsed mode. For example, it can produce laser pulse of 160 ns FWHM at a rate of 10 Hz.
  • An optical injection system 11 of pulsed light beam 9 is arranged downstream of the light source 7 along the optical axis A1.
  • the optical injection system 11 of pulsed light beam 9 receives the pulsed light beam 9 and to direct it at the processed surface 5 of the substrate 3.
  • the optical injection system 11 of pulsed light beam 9 includes for instance a beam homogenizer (not represented) to ensure spatial uniformity of the pulsed light beam 9 and a plurality of lenses (not represented) to focus the pulsed light beam 9 on the processed surface 5.
  • the optical injection system 11 of pulsed light beam 9 may also include a folding mirror or a combination thereof to make the apparatus 1 more compact while providing proper orientation to the pulsed light beam 9.
  • the pulsed light beam 9 is incident on the processed surface 5 where it forms a light spot 13.
  • the dimension of the spot is configurable.
  • the dimension of the spot corresponds for example to the area of a die 4.
  • the position of the light spot 13 may be changed by moving the moveable platform 6.
  • the folding mirror of the injection system 11 may be able to scan the pulsed light beam 9 over the whole surface of the substrate 3.
  • the area on which the light spot 13 forms will be referred to as a treated zone 13.
  • the treated zone 13 Under the exposure to the pulsed light beam 9, the treated zone 13 is heated up to a maximal surface temperature Tmax.
  • the surface temperature Ts of the treated zone 13 varies from ambient temperature Ta (temperature in the process chamber 2) to the maximal temperature Tmax, which range here from 800°C to 3000°C.
  • thermal radiation 16 is emitted in all direction (isotropic emission), with a spectrum following the Planck's law.
  • Ts typically comprised between 25°C and1700°C
  • most of the thermal radiation is emitted in the infrared range, between 1 ⁇ m and 10 ⁇ m.
  • the apparatus 1 further includes a first optical system 19 that is arranged downstream the thermal radiation 16.
  • the first optical system 19 has a third optical axis A3 (see Figure 1 ).
  • the first optical system 19 is situated outside the process chamber 2.
  • a window 31 of the process chamber 2 lets part of the thermal radiation 16 propagate out of the process chamber 2. Only part of the thermal radiation reaches the first optical system 19.
  • the first optical system 19 is configured to collect a first radiated beam 17 of thermal radiation 16 over a first solid angle of thermal radiation ⁇ TR1 in a first direction of thermal radiation D TR1 .
  • the first optical system 19 in order along the first radiated beam 17 propagation (indicated by arrows), includes a first optical group 191 a third optical group 195 and a second optical group 193.
  • the first optical group 191 includes a single collecting lens or a combination of lenses adapted to collect the first radiated beam 17.
  • An example single collecting lens is a plano-convex lens.
  • the third optical group 195 is arranged close to the focal plane of the first optical group 191.
  • the third optical group 195 is configured to conjugate the image of the treated zone 13 with the object focal plane of the second optical group 193.
  • the third optical group 195 permits choosing the overall length of the first optical system 19 and facilitates the integration of the apparatus in the machine environment.
  • the second optical group 193 preferably includes a combination of lenses giving the first optical system 19 a large aperture, a moderate field of view, a good spatial resolution and small chromatic aberrations over a large spectral bandwidth in the infrared.
  • the image of the treated area 13 is placed in the object focal plane of the second group optical group 193 so that it is telecentric.
  • the first optical group 191 makes this conjugation in combination with third optical group 195.
  • the first optical system 19 comprises here a folding mirror 197 to change the propagation direction of the first radiated beam 17 in order to make the first optical system 19 more compact.
  • a combination of folding mirrors may be used to make the first optical system 19 more compact.
  • the first optical system 19 collects the first radiated beam 17 over a first solid angle of thermal radiation ⁇ TR1a in the first direction of thermal radiation D TR1 .
  • the extent of the first solid angle of thermal radiation ⁇ TR1a is determined by the acceptance angle of the first routing means of thermal radiation 25a that is later described.
  • the first optical system 19 only includes the first optical group 191 and the second optical group 193.
  • the apparatus 1 may comprise a mechanical actuator 21 mechanically connected to the first optical system 19 and configured to change the position of the first optical system 19.
  • the mechanical actuator 21 is configured to change the position of the first optical system 19 in the X direction and in the Y direction. That way, the first optical system 19 is able to change the area measured within one die 4, or to change die 4.
  • the mechanical actuators 21 may comprise an active mirror or a combination thereof.
  • the mechanical actuators 21 may comprise a platform having one translation axis in the X direction and one translation axis in the Y direction.
  • the platform may be able to translate over a 30 mm range in both directions in steps of 0,5 mm.
  • the apparatus 1 further comprises a first detection channel of thermal radiation 23a arranged downstream of the first optical system 19.
  • the first detection channel of thermal radiation 23a comprises a first routing means of thermal radiation 25a having an entry end (see Figure 5 ) placed in the focal plane of the second optical group 193.
  • the first routing means of thermal radiation 25a comprises a segment of optical fiber of predetermined length and predetermined diameter.
  • An example length is 15 m.
  • An example diameter is 400 ⁇ m.
  • the optical fiber has an acceptance angle comprised between 8° and 15°.
  • the first routing means of thermal radiation 25a is arranged here in a bundle of fibers, more precisely in a multi-branch fiber bundle 27.
  • the optical fibers are held together at the entry end of the multi-branch fiber bundle 27, and are separated into multiple branches at an exit end of the multi-branch fiber bundle 27.
  • Multi-branch fiber bundle 27 provides a flexible mechanism for routing the various signals the apparatus 1 measures.
  • the first routing means of thermal radiation 25a carries the first radiated beam 17.
  • the first detection channel of thermal radiation 23a further comprises a first filtering system of thermal radiation 29a arranged downstream the first routing means of thermal radiation 25a.
  • the first filtering system of thermal radiation 29a allows adapting the geometry and spectrum of the first radiated beam 17 for its subsequent measurement.
  • the first filtering system of thermal radiation 29a includes a first collimating group of thermal radiation 291a, a first filter of thermal radiation 293a, and a first focusing group of thermal radiation 295a.
  • the first collimating group of thermal radiation 291 a comprises a lens or a combination thereof, and collimates the first radiated beam 17 which is divergent upon exiting the first routing means of thermal radiation 25a.
  • the first filter of thermal radiation 293 controls the spectral width of the first radiated beam 17 and removes unwanted contributions.
  • the first bandwidth is preferably centered on a first wavelength of thermal radiation ⁇ TR1 .
  • the first wavelength of thermal radiation ⁇ TR1 is selected to be equal to a first wavelength of probing light ⁇ PL1 that will be described later.
  • the first filter of thermal radiation 293 has a first bandwidth for example smaller than or equal to 100 nm.
  • An example first filter of thermal radiation 293 is an interferential filter.
  • the first focusing group of thermal radiation 295 comprises a lens or a combination thereof; it focuses the first radiated beam 17 on a focal plane FP1.
  • the first detection channel of thermal radiation 23a further comprises a first detector of thermal radiation 31 a that is arranged on the focal plane FP1 of the first focusing group 295a.
  • the first detector of thermal radiation 31 a is sensitive to said first wavelength of thermal radiation ⁇ TR1 .
  • the first detector of thermal radiation 31a operates preferably in the short infrared (example range: from 0,9 ⁇ m to 1,6 ⁇ m). Alternatively, and depending on the first wavelength of thermal radiation ⁇ TR1 , it may operate in the mid-wavelength infrared (example range: from 3 ⁇ m to 5 ⁇ m), the long-wavelength infrared (example range: from 8 ⁇ m to 12 ⁇ m) or the visible (example range: from 0,4 ⁇ m to 0,9 ⁇ m).
  • An example first detector of thermal radiation 31 sensitive in the short infrared is a photodiode made of InGaAs.
  • the first detector of thermal radiation 31 a delivers a first signal of thermal radiation S TR1a representative, at a first instant t 1 , of a first intensity of the first radiated beam 17 at the first wavelength of thermal radiation ⁇ TR1 .
  • the first detector of thermal radiation 31 a is operably coupled to a controller 33.
  • the controller 33 comprises for example a digitizer board.
  • the controller 33 digitizes the first signal of thermal radiation S TR1a .
  • the controller 33 is also configured to implement a fast acquisition rate of the first radiated beam 17.
  • An example acquisition rate is 500 Megasamples per second (i.e. 200 MHz). We note that the acquisition rate is faster than the duration of the pulse of the pulsed light beam. This allows an accurate monitoring of the surface temperature Ts during the thermal processing.
  • the apparatus 1 further comprises a processing device 35.
  • the processing device 35 is operably coupled with the controller 33.
  • the processing device 35 receives the first signal of thermal radiation S TR1 and processes it according to the method later described.
  • the processing device 35 is for example a computer equipped with a user interface.
  • the user interface allows a user to configure the controller 33 and to monitor it during the measurements.
  • the user interface may also be used to display results of the measurements.
  • the apparatus 1 further includes a first illumination system 37 (see Figure 1 ) that emits a first beam of probing light 39 towards the treated zone 13 of the processed surface 5.
  • the first illumination system 37 comprises a first illumination source 41 that emits the first beam of probing light 39 along a second optical axis A2.
  • An example first illumination source 41 is an infrared superluminescent diode that emits light at a first wavelength of probing light ⁇ PL1 comprised in a range from 0,9 ⁇ m to 1,6 ⁇ m.
  • Examples first wavelength of probing light ⁇ PL1 are 1,31 ⁇ m or 1,55 ⁇ m.
  • the first illumination system 37 also includes a first illumination injection system 43 arranged along the second optical axis A2 downstream the first illumination source 41.
  • the first illumination injection system 43 comprises one optical lens to collimate the first beam of probing light 39 to illuminate the treated zone 13.
  • the first illumination injection system 43 may comprise one folding mirror or a combination thereof to fold the first beam of probing light 39 and direct it towards the treated zone 13. Indeed, for ease of illustration, the first beam of probing light 39 is shown as unfolded with only one direction along the second optical axis A2. However, in practice the first beam of probing light 39 may be folded to make the first illumination system 37 more compact and comply with the machine environment.
  • the first beam of probing light 39 is incident on the treated zone 13 of the processed surface 5 where it forms a first illumination spot 45 of dimensions superior to a collection area 15 over which thermal radiation 16 and light reflected from the first beam of probing light 39 are collected.
  • Part of the light of the first beam of probing light 39 is reflected on the processed surface 5 in a first direction of probing light D PL to form a first reflected beam 47 of probing light 39.
  • the reflection is considered specular.
  • Another part of the light of the first beam of probing light 39 is absorbed in the substrate 3.
  • the first optical system 19 collects the first reflected beam 47 in a first direction of probing light D PL1 over a first solid angle of probing light ⁇ PL1 .
  • the first optical group 19 is also configured to adapt the geometry of the first reflected beam 47 for its subsequent measurement.
  • the first optical system 19 transmits the first reflected beam 47 to a first detection channel of probing light 49 of the apparatus 1.
  • the first detection channel of probing light 49 is arranged on the focal plane of the second optical group 193.
  • the first detection channel of probing light 49 comprises a first routing means of probing light 51 to receive the first reflected beam 47 from the first optical system 19.
  • the first routing means of probing light 51 is arranged at the center of the multi-branch fiber bundle 27.
  • the first routing means of probing light 51 is arranged in relation with the first routing means of thermal radiation 25a so as to prevent part of the first reflected beam 47 to enter the first routing means of thermal radiation 25a.
  • the respective position of each routing means 25a, 51 with respect to the first optical system 19 determines the direction in which each optical fiber can respectively collect a signal.
  • the first direction of probing light D PL1 is separated from the first direction of thermal radiation D TR1a by a first angle of deviation ⁇ Dev1 .
  • the first angle of deviation ⁇ Dev1 is greater than zero and lower than a first predetermined threshold.
  • An example first predetermined threshold is 9°.
  • the first routing means of thermal radiation 25a is separated from first routing means of probing light 51 by a distance S1. By increasing the distance S1, the first angle of deviation ⁇ Dev1 increases. Therefore, the risk of first reflected beam 47 entering the first routing means of thermal radiation 25a is decreased.
  • the first angle of deviation ⁇ Dev1 cannot be too large.
  • Acceptable values of the first angle of deviation ⁇ Dev1 are comprised between 3 degrees and 5 degrees.
  • the first routing means of probing light 51 may also be accurately aligned with the first optical system 19 so that the specular radiation of the first reflected beam 47 is directed into the first routing means of probing light 51. This alignment is for example achieved when the third optical axis A3 coincide with the first direction of probing light D PL1 .
  • thermal radiation 16 is isotropic, some thermal radiation enters the first routing means of probing light 51. However, the intensity of the thermal radiation 16 entering the first routing means of probing light 51 is much smaller than the intensity of the first reflected beam 47 and can thus be neglected.
  • the first detection channel of probing light 49 further comprises a first filtering system of probing light 53 arranged downstream the first routing means of probing light 51.
  • the first filtering system of probing light 53 adapts the geometry and spectrum of the first reflected beam 47 for its subsequent measurement.
  • the first filtering system of probing light 53 includes a first collimating group of probing light 531, a first filter of probing light 533, and a first focusing group of probing light 535.
  • the first collimating group of probing light 531 and the first focusing group of probing light 535 are similar respectively to the first collimating group of thermal radiation 191 and the first focusing group of thermal radiation 195.
  • the first filter of probing light 533 controls the spectral width of the first reflected beam 47 and to remove unwanted contributions.
  • the first filter of probing light 533 has a second bandwidth smaller or equal to the first bandwidth.
  • the second bandwidth is preferably centered on the first wavelength of probing light ⁇ PL1 .
  • the first detection channel of probing light 49 further comprises a first detector of probing light 55 that is arranged at the focal length of the first focusing group of probing light 535.
  • the first detector of probing light 55 is sensitive to said first wavelength of probing light ⁇ PL1 .
  • the first detector of probing light 55 operates preferably in the short infrared (example range: from 0,9 ⁇ m to 1,6 ⁇ m). Alternatively, and depending on the first wavelength of thermal radiation ⁇ TR1 , it may operate in the mid-wavelength infrared (example range: from 3 ⁇ m to 5 ⁇ m), the long-wavelength infrared (example range: from 8 ⁇ m to 12 ⁇ m) or the visible (example range: from 0,4 ⁇ m to 0,9 ⁇ m).
  • An example first detector of probing light 55 is a photodiode made of InGaAs.
  • the first detector of probing light 55 and the first detector of thermal radiation 31 have the same relative spectral sensitivity.
  • the first detector of probing light 55 delivers a first signal of probing light S PL1 representative, at a second instant t 2 , of a first intensity of the first reflected beam 47 at said first wavelength of probing light ⁇ PL1 .
  • the first detector of probing light 55 is operably coupled to the controller 33.
  • the controller 33 digitizes the first signal of probing light S PL1 .
  • the controller 33 also implements a fast acquisition rate of the first reflected beam 47.
  • An example acquisition rate is 500 Megasamples per second.
  • the controller 33 synchronizes the first detection channel of thermal radiation 23 and the first detection channel of probing light 53 so that said first instant t 1 and said second instant t 2 occur at the same time.
  • the simultaneous measuring of both the thermal radiation 16 and the first reflected beam 47 helps reducing the error in the measurement of the surface temperature Ts.
  • the processing device 35 receives the first signal of probing light S PL1 and processes it according to the method later described.
  • the apparatus 1 having a single first optical system 19 to collect both first radiated beam 17 and first reflected beam 47, and a routing means to collect them and to route them separately to a respective detector allows a great flexibility in the positioning of the detectors which is important to comply with the volume limitation of the machine environment.
  • Having a first detector of thermal radiation 31 a dedicated to measuring the first radiated beam 17 and a first detector of probing light 55 dedicated to measuring the first reflected beam 47 permits to perform both measurements simultaneously.
  • the surface temperature Ts determined based on these signals simultaneously acquired has a better accuracy than in the prior art.
  • the first detection channel of thermal radiation 23 further comprises an additional first routing means of thermal radiation 25b that is arranged at the focal length of the second optical group 193.
  • thermal radiation 16 is isotropic.
  • the first routing means of thermal radiation 25b then receives a part of thermal radiation forming an additional first radiated beam 17b.
  • the additional first radiated beam 17b propagates in an additional first direction of thermal radiation D TR1b .
  • the first direction of thermal radiation D TR1a and the additional first direction of thermal radiation D TR1b are for example determined each by the position of their respective routing means 25a, 25b.
  • the deviation angle between the first direction of thermal radiation D TR1a and the additional first direction of thermal radiation D TR1b ranges for example between 3 and 9 degrees.
  • the additional first routing means of thermal radiation 25b is arranged in the multi-branch fiber bundle 27.
  • the first detection channel of thermal radiation 23 further comprises an additional first filtering optical system 29b similar to the first filtering optical system 29a, and an additional first detector of thermal radiation 31 b similar to the first detector of thermal radiation 31 a.
  • the additional first detector of thermal radiation 31 b may be arranged at a distance from the first detector of thermal radiation 31 a.
  • the additional first detector of thermal radiation 31 b delivers an additional first signal of thermal radiation S TR1b representative, at the first instant t 1 , of a first intensity of the additional first radiated beam 17b at said first wavelength of thermal radiation ⁇ TR1 .
  • the additional first detector of thermal radiation 31 b is operably coupled to the controller 33.
  • the processing device 35 receives the additional first signal of thermal radiation S TR1b and to process it according to the method later described.
  • Measuring two signals representative of the thermal radiation 16 of the substrate 3, helps reducing the uncertainty in the calculation of the surface temperature Ts of the substrate 3.
  • the apparatus 1 further comprises a first polarization separator to separate the first reflected beam 47 into two beams: an s-polarized first reflected beam and a p-polarized first reflected beam.
  • the polarization separator is arranged downstream the first routing means of probing light 51. More precisely, the polarization separator is arranged in the first filtering system of probing light 53, downstream the first collimating group of probing light 531.
  • An example polarization separator is a polarizing beamsplitter.
  • Another example polarization separator is a Wollaston prism.
  • Each of the polarized first reflected beams is transmitted to a respective detector. This set-up permits to take in account the variation in emissivity with polarization and helps decreasing the uncertainty in the calculation of the surface temperature Ts of the substrate 3.
  • the apparatus 1 may comprise a second polarization separator arranged in the additional first filtering optical system 29b.
  • the second polarization separator is arranged between an additional first collimating group and an additional first focusing group. In this case only one of the polarizations is transmitted to the additional first detector of thermal radiation 31 b. The other polarization is absorbed by the second polarization separator. This way, the effect of polarization on thermal radiation 16 can be assessed.
  • the apparatus 1 includes a second illumination system 57 that emits a second beam of probing light 59 towards the treated zone 13 of the processed surface 5.
  • the second illumination system 57 comprises a second illumination source 61 that emits the second beam of probing light 59 along a fourth optical axis A4.
  • An example second illumination source 61 is an infrared superluminescent diode that emits light at a second wavelength of probing light ⁇ PL2 comprised in a range from 0,9 ⁇ m to 1,6 ⁇ m.
  • Examples second wavelength of probing light ⁇ PL2 are 1,31 ⁇ m or 1,55 ⁇ m.
  • the first illumination source 41 emits light at 1,31 ⁇ m and the second illumination source 61 emits light at 1,55 ⁇ m.
  • the second illumination system 57 also includes a second illumination injection system 63 arranged along the fourth optical axis A4 downstream the second illumination source 61.
  • the second illumination injection system 63 comprises elements similar to those of the first second illumination injection system 43 and plays a similar role.
  • the first illumination source 41 and the second illumination source 61 are arranged at distance from the substrate 3.
  • the first illumination source 41 is coupled to an entry end of a first illumination routing means.
  • the coupling is achieved by directly coupling the entry end of the first illumination routing means to an end connector of the first illumination source through a first mating sleeve.
  • the first illumination routing means comprises a first illumination optical fiber.
  • the second illumination source 61 is coupled to an entry end of a second illumination routing means.
  • the coupling is achieved by directly coupling the entry end of the second illumination routing means to an end connector of the second illumination source through a second mating sleeve.
  • the second illumination routing means comprises a second illumination optical fiber.
  • the first illumination optical fiber and the second illumination optical fiber are arranged in an illumination multi-branch fiber bundle such that their entry ends are separated into multiple branches, and are held together at an exit end of the illumination multi-branch fiber bundle.
  • the exit end of the illumination multi-branch fiber bundle is arranged at a focal plane of a common illumination injection system.
  • the use of the illumination multi-branch fiber bundle provides a flexible mechanism for routing the various beams of probing light 39, 59 from their respective illumination source to a short distance from the substrate 3.
  • the second beam of probing light 59 is incident on the treated zone 13 of the processed surface 5 where it forms a first illumination spot (not represented) of dimensions superior to the area over which thermal radiation 16 and light reflected from the first beam of probing light 39 and from the second beam of probing light 59 are collected
  • Part of the light of the second beam of probing light 59 is reflected on the processed surface 5 in a second direction of probing light D PL2 to form a second reflected beam 65.
  • the reflection is considered specular.
  • Another part of the light of the second beam of probing light 59 is absorbed in the substrate 3.
  • the first optical system 19 collects the second reflected beam 65 in a second direction of probing light D PL2 over a second solid angle of probing light ⁇ PL2 , in addition to collecting the first radiated beam 17, and the first reflected beam 47.
  • the first optical system 19 adapts the geometry of the second reflected beam 65 and to transmit it to a second detection channel of probing light 67 of the apparatus 1.
  • the second detection channel of probing light 67 is arranged at the focal length of the second optical group 193.
  • the second detection channel of probing light 67 comprises a second routing means of probing light 69 that is arranged to receive the second reflected beam 65 from the first optical system 19.
  • the second routing means of probing light 69 is an optical fiber that is arranged in the multi-branch fiber bundle 27.
  • thermal radiation 16 is isotropic, some thermal radiation enters second routing means of probing light 69. However, its effect on the measurement of the second reflected beam 65 can be neglected.
  • the second detection channel of probing light 67 further comprises a second filtering system of probing light 71 arranged downstream the second routing means of probing light 69.
  • the second filtering system of probing light 71 adapts the geometry and spectrum of the second reflected beam 65 for its subsequent measurement.
  • the second filtering system of probing light 71 includes a second collimating group of probing light 711, a second filter of probing light 713, and a second focusing group of probing light 715.
  • the second collimating group of probing light 711 collimates the second reflected beam 65.
  • the second focusing group of probing light 715 focuses the second reflected beam 65 for its subsequent measurement.
  • the second filter of probing light 713 controls the spectral width of the second reflected beam 65 and to remove unwanted contributions.
  • the first filter of probing light 713 has a third bandwidth that do not overlap with the first and the second bandwidth.
  • the third bandwidth contains the second wavelength of probing light ⁇ PL2 .
  • the third bandwidth is smaller than a predetermined maximum, for example smaller than 100 nm.
  • the second detection channel of probing light 67 further comprises a second detector of probing light 73 that is arranged at the focal length of the second focusing group of probing light 715.
  • the second detector of probing light 73 is sensitive to said second wavelength of probing light ⁇ PL2 .
  • the second detector of probing light 73 delivers a second signal of probing light S PL2 representative, at the second instant t 2 , of a second intensity of the second reflected beam 65 at said second wavelength of probing light ⁇ PL2 .
  • the second detector of probing light 73 is operably coupled to the controller 33.
  • controller 33 synchronizes the second detection channel of probing light 67, the first detection channel of thermal radiation 23 and the first detection channel of probing light 53 so that the three measurements are performed simultaneously.
  • the processing device 35 receives the second signal of probing light S PL2 and processes it according to the method later described.
  • the first optical group 19 may also collect a second radiated beam 75 propagating in a second direction of thermal radiation D TR2 over a second solid angle of thermal radiation ⁇ TR2 .
  • the first optical group 19 transmits the second radiated beam 75 to a second detection channel of thermal radiation 77.
  • the second detection channel of thermal radiation 77 comprises a second routing means of thermal radiation 79 that is arranged at the focal length of the second optical group 193.
  • second routing means of thermal radiation 79 comprises an optical fiber that is arranged in multi-branch fiber bundle 27.
  • the second routing means of thermal radiation 79 transmits the second radiated beam 75.
  • the second routing means of thermal radiation 79 is arranged in relation to the second routing means of probing light 69 so as to prevent part of the second reflected beam 65 to enter the second routing means of thermal radiation 79.
  • the second direction of probing light D PL2 is separated from the second direction of thermal radiation D TR2 by a second angle of deviation ⁇ Dev2 .
  • the second angle of deviation ⁇ Dev2 is greater than zero and is lower than a second predetermined threshold.
  • An example second predetermined threshold is 9°.
  • the second detection channel of thermal radiation 77 further comprises a second filtering system of thermal radiation 81 arranged downstream the second routing means of thermal radiation 79.
  • the second filtering system of thermal radiation 81 is similar to the first filtering system of thermal radiation 29 but for its bandwidth.
  • the bandwidth of the second filter of thermal radiation 813 is the third bandwidth.
  • the second detection channel of thermal radiation 75 further comprises a second detector of thermal radiation 83 that is arranged at the focal length of a second focusing group of thermal radiation 815.
  • the second detector of thermal radiation 83 is sensitive to a second wavelength of thermal radiation ⁇ TR2 .
  • the second wavelength of thermal radiation X TR2 is equal to the second wavelength of probing light ⁇ PL2 .
  • the second detector of thermal radiation 83 delivers a second signal of thermal radiation S TR2 representative, at the first instant t 1 , of a second intensity of the second radiated beam 75 at said second wavelength of thermal radiation ⁇ TR2 .
  • the second detector of thermal radiation 83 is operably coupled to the controller 33 which operates as described before.
  • the controller 33 is configured so that the first radiated beam 17, the first reflected beam 47, the second radiated beam 75 and the second reflected beam 65 are all measured simultaneously.
  • the processing device 35 receives the second signal of thermal radiation S TR2 and processes it according to the method later described.
  • the apparatus 1 includes a second optical system to collect second reflected beam 65 and second radiated beam 75.
  • the second optical system also transmits second reflected beam 65 and second radiated beam 75 to their respective routing means which are arranged in another or the same multi-branch fiber bundle 27 described earlier.
  • the apparatus 1 comprises a third illumination system in addition to or instead of the second illumination system 57.
  • the third illumination system comprises a third illumination source that emits a third beam of probing light at a third wavelength of probing light ⁇ PL3 .
  • the third wavelength of probing light ⁇ PL3 is for example a visible wavelength, for example 633 nm, and an example third light source is a HeNe laser.
  • third wavelength of probing light ⁇ PL3 is for a near UV wavelength.
  • the apparatus 1 comprises a third detector of probing light, for example a Si photodiode.
  • the processed surface 5 of the substrate 3 is illuminated by a pulsed light beam 9, e.g. a pulsed laser beam, such as previously described.
  • the pulsed light beam 9 heats the treated zone 13 of the processed surface 5.
  • the treated zone 13 in turn emits thermal radiation 16 representative of its surface temperature Ts.
  • the method comprises a step of emitting the first beam of probing light 39 towards treated zone 13.
  • the first beam of probing light 39 has a first wavelength of probing light ⁇ PL1 , preferably in the infrared.
  • the first detector of thermal radiation 31 measures the first signal of thermal radiation S TR1a at a first instant t 1 .
  • the measurement is implemented by the controller 33.
  • the first detector of probing light 55 measures the first signal of probing light S PL1 at a second instant t 2 .
  • the measurement is implemented by the controller 33.
  • the controller 33 synchronizes the first detector of thermal radiation 31 and the first detector of probing light 55 so that the first instant t 1 and second instant t 2 occur simultaneously.
  • the processing device 35 processes the first signal of thermal radiation S TR1 and the first signal of probing light S PL1 .
  • R ref1 is a first expected value of a reflected calibration beam and S ref1 is a corresponding first measured value of the reflected calibration beam.
  • R ref2 is a second expected value of a reflected calibration beam and S ref2 is a corresponding second measured value of the reflected calibration beam.
  • the processing device 35 determines the surface temperature of the treated zone 13 at said first instant based on the first processed signal of thermal radiation and on first processed signal of probing light.
  • T ⁇ t hc ⁇ TR 1 K ln 1 + 2 h . c 2 . K calib . ⁇ ⁇ t S TR 1 a ⁇ t . ⁇ TR 1
  • h the Planck constant
  • c the celerity of light
  • K the Boltzmann constant
  • Kcalib an instrumental constant of the first detector of thermal radiation 31 a.
  • K calib R ⁇ . ⁇ . G . ⁇
  • R( ⁇ ) is the spectral sensitivity of the first detector of thermal radiation 31 a.
  • ⁇ is the optical transmission.
  • G is the etendue.
  • ⁇ is the spectral bandwidth. Then its value is finely determined for each instrument during a calibration step.
  • the method may be applied to the other embodiments of the apparatus 1 previously described.
  • the method then further comprises a step of emitting a second beam of probing light 59 at the second wavelength of probing light ⁇ PL2 towards treated zone 13 of the processed surface 5 of the substrate 3.
  • the second detector of thermal radiation 83 measures a second signal of thermal radiation S TR2 at a third instant t 3 .
  • the measurement is implemented by the controller 33.
  • the third instant t 3 is simultaneous with the first instant t 1 and the second instant t 2 .
  • the second detector of probing light 73 measures a second signal of probing light S PL2 at a fourth instant t 4 .
  • the measurement is implemented by the controller 33.
  • the controller 33 synchronizes the first detector of thermal radiation 31, the first detector of probing light 55, the second detector of thermal radiation 83 and the second detector of probing light 73 so that the first instant t 1 , second instant t 2 , third instant t 3 and fourth instant t 4 occur simultaneously.
  • T t hc k 1 ⁇ TRLong ⁇ 1 ⁇ TRshort ln S thermal ⁇ TRshort t S thermal ⁇ TRlong , t ⁇ ln ⁇ ⁇ PLshort t ⁇ ⁇ PLlong t ⁇ ln K calib ′ ⁇ TRlong ⁇ TRshort 5
  • ⁇ TPlong corresponds to the longest wavelength between the first wavelength of thermal radiation ⁇ TR1 and the second wavelength of thermal radiation ⁇ TR2 .
  • ⁇ TRshort corresponds shortest wavelength between the first wavelength of thermal radiation ⁇ TR1 and the second wavelength of thermal radiation ⁇ TR2 .
  • ⁇ PLlong corresponds to the longest wavelength between the first wavelength of probing light ⁇ PL1 and the second wavelength of probing light ⁇ PL2 .
  • ⁇ PLshort corresponds to the shortest wavelength between the first wavelength of probing light ⁇ PL1 and the second wavelength of probing light ⁇ PL2 .

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
  • Radiation Pyrometers (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
EP17205566.7A 2017-12-05 2017-12-05 Vorrichtung und verfahren zur messung der oberflächentemperatur eines substrats Pending EP3495790A1 (de)

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EP17205566.7A EP3495790A1 (de) 2017-12-05 2017-12-05 Vorrichtung und verfahren zur messung der oberflächentemperatur eines substrats
TW107139465A TWI705234B (zh) 2017-12-05 2018-11-07 用於測量基板的表面溫度之裝置及方法
JP2020528329A JP2021505852A (ja) 2017-12-05 2018-12-03 基板の表面温度を測定する装置および方法
PCT/EP2018/083376 WO2019110524A1 (en) 2017-12-05 2018-12-03 Apparatus and method for measuring the surface temperature of a substrate
US16/769,391 US11454543B2 (en) 2017-12-05 2018-12-03 Apparatus and method for measuring the surface temperature of a substrate
KR1020207015263A KR20200092967A (ko) 2017-12-05 2018-12-03 기판의 표면 온도를 측정하기 위한 장치 및 방법

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US11204383B2 (en) * 2019-09-30 2021-12-21 Formfactor, Inc. Methods for maintaining gap spacing between an optical probe of a probe system and an optical device of a device under test, and probe systems that perform the methods

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US11454543B2 (en) 2022-09-27
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JP2021505852A (ja) 2021-02-18
US20200292390A1 (en) 2020-09-17

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