EP3419933A1 - Verfahren zur herstellung von silicium - Google Patents
Verfahren zur herstellung von siliciumInfo
- Publication number
- EP3419933A1 EP3419933A1 EP17707491.1A EP17707491A EP3419933A1 EP 3419933 A1 EP3419933 A1 EP 3419933A1 EP 17707491 A EP17707491 A EP 17707491A EP 3419933 A1 EP3419933 A1 EP 3419933A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- magnesium oxide
- magnesium
- weight
- silicon
- moderator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 42
- 239000010703 silicon Substances 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 62
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims abstract description 59
- 239000000395 magnesium oxide Substances 0.000 claims abstract description 57
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims abstract description 55
- 239000011777 magnesium Substances 0.000 claims abstract description 42
- 239000000203 mixture Substances 0.000 claims abstract description 41
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 28
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 27
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 239000002253 acid Substances 0.000 claims description 9
- 150000007513 acids Chemical class 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims description 5
- 239000007858 starting material Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 8
- 239000000047 product Substances 0.000 description 21
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 8
- 239000006227 byproduct Substances 0.000 description 8
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 239000000391 magnesium silicate Substances 0.000 description 7
- 229910052919 magnesium silicate Inorganic materials 0.000 description 7
- 235000019792 magnesium silicate Nutrition 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 6
- 239000000470 constituent Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 239000000706 filtrate Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 4
- 229920004482 WACKER® Polymers 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000004570 mortar (masonry) Substances 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 239000000376 reactant Substances 0.000 description 4
- 239000011780 sodium chloride Substances 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 239000000725 suspension Substances 0.000 description 4
- 238000010626 work up procedure Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- -1 copper or brass Chemical class 0.000 description 3
- 229910021485 fumed silica Inorganic materials 0.000 description 3
- 229910021338 magnesium silicide Inorganic materials 0.000 description 3
- YTHCQFKNFVSQBC-UHFFFAOYSA-N magnesium silicide Chemical compound [Mg]=[Si]=[Mg] YTHCQFKNFVSQBC-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000005909 Kieselgur Substances 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000001110 calcium chloride Substances 0.000 description 2
- 229910001628 calcium chloride Inorganic materials 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000004993 emission spectroscopy Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 2
- 229910001416 lithium ion Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Chemical class 0.000 description 2
- 239000002184 metal Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 235000010678 Paulownia tomentosa Nutrition 0.000 description 1
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- JROGBPMEKVAPEH-GXGBFOEMSA-N emetine dihydrochloride Chemical compound Cl.Cl.N1CCC2=CC(OC)=C(OC)C=C2[C@H]1C[C@H]1C[C@H]2C3=CC(OC)=C(OC)C=C3CCN2C[C@@H]1CC JROGBPMEKVAPEH-GXGBFOEMSA-N 0.000 description 1
- 229910052634 enstatite Inorganic materials 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- BBCCCLINBSELLX-UHFFFAOYSA-N magnesium;dihydroxy(oxo)silane Chemical compound [Mg+2].O[Si](O)=O BBCCCLINBSELLX-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 125000005624 silicic acid group Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/023—Preparation by reduction of silica or free silica-containing material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F5/00—Compounds of magnesium
- C01F5/02—Magnesia
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F5/00—Compounds of magnesium
- C01F5/02—Magnesia
- C01F5/04—Magnesia by oxidation of metallic magnesium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
Definitions
- the invention relates to processes for the production of silicon by means of magnesiothermic reduction of silica.
- Silicon is part of a wide variety of products with great economic growth potential, especially in the electronic field, for example in semiconductors, lithium-ion batteries or solar cells, so that the demand for silicon is steadily increasing. Therefore, there is a continuing need to further improve processes for producing silicon.
- An established chemical method for obtaining silicon is the reduction of silica with magnesium (magnesiothermic reduction), which is illustrated by the following reaction scheme:
- Chlorides, sulfides or nitrates Chlorides, sulfides or nitrates. Highlighted inert materials are sodium chloride or alternatively magnesium oxide, for example, in a proportion of 72 wt .-% (MgO, Riedel-de-Haen # 13138, BET: 42 m 2 / g) and 65 wt -.% (NaCl) on the Starting mixture are used.
- WO 2011/042742 Al recommends sodium chloride or alternatively Calcium chloride as moderators for the reduction of Si0 2 with magnesium.
- the invention relates to processes for the production of silicon by means of magnesiothermic reduction of silicon dioxide, characterized in that a mixture (educt mixture) is used for magnesiothermic reduction comprising silica (Si0 2 ), magnesium (Mg) and magnesium oxide (MgO) as moderator a BET surface of ⁇ 40 m 2 / g.
- the silica may be in amorphous or crystalline form. It can be of synthetic or natural origin. Examples of silica are fumed silica, precipitated silica, quartz, tridymite, christobalite, diatomaceous earth or silica-bonded SiO 2 , such as forsterite or enstatite. Preference is given synthetic, amorphous silicic acids, fumed silica is particularly preferred.
- the volume-weighted particle size distribution D 50 of the SiO 2 particles is, for example, 10 nm to 500 ⁇ m, preferably 100 nm to 100 ⁇ m and particularly preferably 500 nm to 50 ⁇ m (determination method: static Li scattering, measuring instrument Horiba LA 950, water as dispersion medium ).
- the specific surface area (BET) of Si0 2 is, for example, 1 to 500 m 2 / g, preferably 10 to 300 m 2 / g and particularly preferably 15 to 200 m 2 / g (determined according to DIN 66131 (with nitrogen), for example with Measuring device Sorptomatic 1990 of the company Porotec).
- Magnesium can be used, for example, in the form of wire, preferably in the form of chips, and more preferably in the form of powder. the.
- the particle size of the magnesium is for example 1 ⁇ to 10 mm, preferably 5 to 5 mm and more preferably 10 ⁇ to 500 ⁇ .
- the stoichiometric ratio of silica to magnesium (SiO 2 / Mg) in the educt mixture is preferably from 0.3 to 1, more preferably from 0.4 to 0.7, and most preferably from 0.4 to 0.6.
- the magnesium oxide which is contained in the reactant mixture is also referred to below as a moderator.
- the magnesium oxide used as a moderator may be of natural or synthetic origin.
- the volume-weighted particle size distribution D 50 of the MgO particles is for example 1 ⁇ to 1 mm, preferably 5 ⁇ to 500 ⁇ and more preferably 10 ⁇ to 200 ⁇ .
- the specific surface area (BET surface area) of magnesium oxide is 40 m 2 / g, ⁇ preferably 35 m / g, more preferably ⁇ 30 m 2 / g, particularly be ⁇ vorzugt ⁇ 25 m 2 / g, and most preferably ⁇ 20 m 2 / g.
- the BET surface area of the magnesium oxide is preferably> 0.01 m 2 / g.
- the BET surface area is determined in accordance with DIN 66131 (with nitrogen), for example with the Sorptomatic 1990 measuring instrument from Porotec).
- the bulk density of the magnesium oxide is preferably 0.05 to 3 g / cm 3 , more preferably 0.08 to 2.5 g / cm 3 and most preferably 0.1 to 2 g / cm 3 (determined according to DIN ISO 697).
- the magnesium oxide has a purity of preferably about 85% by weight, more preferably> 90% by weight, most preferably 95% by weight.
- the purity is determined by means of ICP (inductively coupled plasma) emission spectrometry (Optima 7300 DV, Perkin Elmer).
- the magnesium oxide is digested acidic.
- the ICP determination is based on ISO 11885 Water quality - Determination of inductively coupled plasma atomic emission spectrometry (ICP-OES) (ISO 11885: 2007); German version EN ISO 11885: 2009.
- “Other moderators” may be used in addition to magnesium oxide, examples of further moderators are (earth) alkali halides, such as sodium chloride or calcium chloride, or magnesium oxide with non-inventive BET surface area 60% by weight, more preferably 80 80% by weight and particularly preferably 90 90% by weight of magnesium oxide, based on the total weight of the moderators Any other moderators are in the starting material mixture, for example, at 40% by weight, preferably 20% by weight % and more preferably ⁇ 10% by weight, based on the total weight of the moderators, Most preferably, in addition to magnesium oxide, no further moderators are used.
- Silicon dioxide and magnesium are also collectively referred to as reactants.
- the weight ratio of the reactants to the moderator is preferably 0.05 to 1, more preferably 0.2 to 0.7, and most preferably 0.3 to 0.6.
- the educt mixture may contain further optional constituents, for example dopants, such as diborontrioxide. In the course of the magnesiothermal reduction, for example, diboron trioxide can be reduced to elemental boron and serve as a dopant for the resulting silicon.
- the proportion of optional constituents is for example up to 5 wt .-%, preferably 1 ppb (parts per billion) to 5 wt .-%, based on the total weight of the educt mixtures.
- the silica and the magnesium may be separately or preferably in the form of a mixture be used.
- the moderator may be added to a mixture of silica and magnesium, or preferably mixed together with silica and magnesium.
- Silicon dioxide, magnesium and the magnesium oxide used as a moderator are thus generally mixed prior to carrying out the magnesiothermic reduction, that is generally mixed before introduction into the reactor.
- the mixing is preferably carried out at ambient temperature, for example at room temperature, more preferably at 15 to 35 ° C. In any case, the mixing is carried out at temperatures of preferably ⁇ 400 ° C, more preferably 390 ° C and more preferably ⁇ 350 ° C.
- mixers customary therefor, in particular industrial mixers.
- mixers are free-fall mixers, such as container mixers, cone mixers, drum roll mixers, wheel mixer mixers, tumble mixers or push and throw mixers, such as drum mixers and screw mixers.
- suitable mixers are given in "Blending of Solids" by R. Weinekotter and H. Gericke, Springer 1995.
- the magnesiothermic reduction can be carried out in conventional reactors, in particular furnaces, such as, for example, tube furnaces, rotary kilns, chamber furnaces, belt furnaces or furnaces.
- the reactors can be operated batchwise or continuously.
- the reactors may be cooled in a conventional manner. In general, however, the reactor is not cooled.
- the educt mixtures can be introduced into the reactors, for example in the form of pellets, granules or preferably in the form of powder beds.
- the magnesiothermic reduction is preferably carried out at 400 to 1200 ° C, more preferably at 500 to 1100 ° C and most preferably at 600 to 1050 ° C.
- the magnesiothermic reduction is generally initiated thermally, that is to say by heating the educt mixture to a temperature within the aforementioned temperature range.
- the pressure in the reactor is preferably 0.5 to 10 bar abs ., More preferably between 0.7 to 5 bar abs. and most preferably between 0.8 to 1.5 bar abs,.
- the magnesiothermic reduction is preferably under a
- Inert gas atmosphere in particular under an argon atmosphere or an argon / hydrogen atmosphere, in particular with a hydrogen content of - ⁇ 5 vol .-% performed.
- the residence time of the mixture in the reactor is preferably 1 second to 12 hours, more preferably 1 second to 6 hours, and most preferably 1 second to 3 hours.
- the mixture leaving the reactor generally contains silicon, magnesium oxide and optionally one or more further constituents, such as magnesium silicate, magnesium silicide or optionally boron.
- additional constituents such as magnesium silicate, magnesium silicide or optionally boron.
- unreacted educts may also be present, such as magnesium, silicon dioxide or, if appropriate, titanium. boron trioxide.
- the product mixture preferably contains from 1 to 40% by weight, more preferably from 2 to 35% by weight, and most preferably from 5 to 30% by weight.
- Silicon preferably 45 to 99 wt .-%, particularly preferably 50 to 96 wt .-% and most preferably 55 to 94 wt .-% of magnesium oxide, preferably 0 to 40 wt .-%, particularly preferably 0 to 30 wt. %, and most preferably 0 to 20% by weight of other ingredients, wherein the data in% by weight each relate to the total weight of the product mixture and add up to 100% by weight for each product mixture.
- the work-up of product mixtures can be carried out, for example, by adding one or more acids.
- acids are hydrohalic acids, such as hydrochloric acid or hydrofluoric acid, carboxylic acids, such as acetic acid, or oxygen acids of phosphorus, such as phosphoric acid. Preference is given to acetic acid or hydrochloric acid. When using several acids, these can be used as a mixture or preferably nachei- each other.
- the workup can therefore also be carried out in two stages with different acids, for example by a first acid treatment with hydrochloric acid and a second treatment with hydrofluoric acid.
- the acids are preferably incorporated in the form of sets ⁇ w ssrigen solutions.
- the concentration of the acids used is preferably 0.01 to 10 mol / L, more preferably 0.1 to 8 mol / L, most preferably 1 to 5 mol / L.
- the molar ratio of the protons of the acids to the magnesium oxide of the product mixture to be worked up is preferably at least 2 to 1.
- the silicon thus obtained can be dried, for example at temperatures from 0 ° C to 200 ° C, preferably at 20 ° C to 150 ° C and particularly preferably at 40 ° C to 100 ° C.
- the pressure during drying is preferably from 0.01 to 1 bar abs . and preferably 0.1 to 0.5 bar abs .
- the product thus obtained preferably contains from 50 to 100% by weight, more preferably from 60 to 100% by weight and most preferably from 70 to 100% by weight of silicon, based on the total weight of the product.
- the silicon produced according to the invention can be used in all common applications for silicon, for example in electronic Applications. Particularly noteworthy here are semiconductors, solar cells, thermoelectric generators and in particular as an active material for lithium-ion batteries.
- magnesium oxide according to the invention as a moderator in the magnesiothermic reduction of its heat of reaction and thus the process can be controlled - and this even when carrying out the process on an industrial scale.
- the use of magnesium oxide with BET surface according to the invention leads to higher silicon yields. Fortunately, the formation of the by-product magnesium silicate was pushed back and sales of educts were increased.
- magnesia oxide used as a moderator chemically corresponds to the by-product of the magnesiothermic reduction, so that the moderator can be separated together with the magnesium oxide formed during the reaction without a separate washing step being necessary for separating the moderator ,
- the calculation of the product compositions was prepared starting from the element contents (Si, O, Mg) under the over XRD demonstrated he ⁇ filled constraint that magnesium oxide was tung completely removed in the aqueous workup and the isolated product of Si (0) Mg 2 Si0 4 and Si0 2 was composed.
- the Mg content of the isolated product was used to calculate the magnesium silicate content and, consequently, the Si0 2 and Si (0) contents of the isolated product.
- the amount of MgO present before the aqueous work-up was determined via the dissolved amount of magnesium in the filtrate of the washing solution.
- magnesium oxide according to the invention as moderator (Examples 3 and 4)
- significantly higher yields of elemental Si (O) were obtained, based on the silicon used in the form of SiO 2 , and the proportion of by-product was markedly reduced.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Silicon Compounds (AREA)
- Silicates, Zeolites, And Molecular Sieves (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102016202889.8A DE102016202889A1 (de) | 2016-02-24 | 2016-02-24 | Verfahren zur Herstellung von Silicium |
| PCT/EP2017/053427 WO2017144328A1 (de) | 2016-02-24 | 2017-02-15 | Verfahren zur herstellung von silicium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP3419933A1 true EP3419933A1 (de) | 2019-01-02 |
Family
ID=58185493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP17707491.1A Withdrawn EP3419933A1 (de) | 2016-02-24 | 2017-02-15 | Verfahren zur herstellung von silicium |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20190031516A1 (de) |
| EP (1) | EP3419933A1 (de) |
| JP (1) | JP2019506360A (de) |
| KR (1) | KR20180116373A (de) |
| CN (1) | CN108778995A (de) |
| DE (1) | DE102016202889A1 (de) |
| WO (1) | WO2017144328A1 (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB201803983D0 (en) | 2017-09-13 | 2018-04-25 | Unifrax I Llc | Materials |
| CN110098395A (zh) * | 2019-04-30 | 2019-08-06 | 苏州宇量电池有限公司 | 一种有序介孔硅碳负极的制备方法 |
| KR102313157B1 (ko) * | 2020-03-26 | 2021-10-14 | 동아대학교 산학협력단 | 다공성 실리콘 및 이를 포함하는 이차전지 음극 활물질 제조 방법 |
| CN111834621A (zh) * | 2020-06-24 | 2020-10-27 | 西安建筑科技大学 | 一种利用尾矿制备硅碳负极材料及其制备方法 |
| KR102475700B1 (ko) | 2020-07-28 | 2022-12-09 | 한국재료연구원 | 실리콘 분말의 제조방법 및 이를 이용한 질화규소의 제조방법 |
| CN114074942B (zh) * | 2021-11-17 | 2023-03-07 | 青岛科技大学 | 一种利用焦耳热制备单质硅的方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100493960B1 (ko) | 2003-03-20 | 2005-06-10 | 주식회사 엘지화학 | 다공성 실리콘 및 나노크기 실리콘 입자의 제조 방법과리튬 이차 전지용 음극 재료로의 응용 |
| TWM287890U (en) | 2005-06-03 | 2006-02-21 | Chang Bin Ind Co Ltd | Article hanging structure |
| US7615206B2 (en) | 2006-08-11 | 2009-11-10 | Georgia Tech Research Corporation | Methods of fabricating nanoscale-to-microscale structures |
| WO2008067391A2 (en) | 2006-11-28 | 2008-06-05 | Cima Nano Tech Israel Ltd. | Process for producing ultra-fine powder of crystalline silicon |
| WO2009073258A2 (en) | 2007-09-10 | 2009-06-11 | Tiax Llc | Nano-sized silicon |
| WO2010139346A1 (en) | 2009-06-04 | 2010-12-09 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | A method for the manufacture of a silicon polytype material |
| GB0917635D0 (en) | 2009-10-08 | 2009-11-25 | Intrinsiq Materials Global Ltd | Process for the preparation of nano-scale particulate silicon |
| US9139441B2 (en) | 2012-01-19 | 2015-09-22 | Envia Systems, Inc. | Porous silicon based anode material formed using metal reduction |
| GB2502625B (en) | 2012-06-06 | 2015-07-29 | Nexeon Ltd | Method of forming silicon |
-
2016
- 2016-02-24 DE DE102016202889.8A patent/DE102016202889A1/de not_active Withdrawn
-
2017
- 2017-02-15 EP EP17707491.1A patent/EP3419933A1/de not_active Withdrawn
- 2017-02-15 WO PCT/EP2017/053427 patent/WO2017144328A1/de not_active Ceased
- 2017-02-15 JP JP2018544471A patent/JP2019506360A/ja not_active Withdrawn
- 2017-02-15 KR KR1020187027531A patent/KR20180116373A/ko not_active Withdrawn
- 2017-02-15 US US16/077,502 patent/US20190031516A1/en not_active Abandoned
- 2017-02-15 CN CN201780013193.6A patent/CN108778995A/zh not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| US20190031516A1 (en) | 2019-01-31 |
| WO2017144328A1 (de) | 2017-08-31 |
| DE102016202889A1 (de) | 2017-08-24 |
| KR20180116373A (ko) | 2018-10-24 |
| CN108778995A (zh) | 2018-11-09 |
| JP2019506360A (ja) | 2019-03-07 |
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