EP3304110A4 - Verbesserte leistung von transienter stromversorgung (stromintegrität) für eine sondenkartenanordnung in einer testumgebung einer integrierten schaltung - Google Patents

Verbesserte leistung von transienter stromversorgung (stromintegrität) für eine sondenkartenanordnung in einer testumgebung einer integrierten schaltung Download PDF

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Publication number
EP3304110A4
EP3304110A4 EP16803876.8A EP16803876A EP3304110A4 EP 3304110 A4 EP3304110 A4 EP 3304110A4 EP 16803876 A EP16803876 A EP 16803876A EP 3304110 A4 EP3304110 A4 EP 3304110A4
Authority
EP
European Patent Office
Prior art keywords
integrated circuit
probe card
test environment
power supply
circuit test
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP16803876.8A
Other languages
English (en)
French (fr)
Other versions
EP3304110A1 (de
Inventor
Thomas P. Warwick
James V. Russell
Dhananjaya Turpuseema
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
R&D Circuits Inc
Original Assignee
R&D Circuits Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by R&D Circuits Inc filed Critical R&D Circuits Inc
Publication of EP3304110A1 publication Critical patent/EP3304110A1/de
Publication of EP3304110A4 publication Critical patent/EP3304110A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/319—Tester hardware, i.e. output processing circuits
    • G01R31/31901—Analysis of tester Performance; Tester characterization
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07364—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch
    • G01R1/07378—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch using an intermediate adapter, e.g. space transformers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2889—Interfaces, e.g. between probe and tester
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3181—Functional testing
    • G01R31/319—Tester hardware, i.e. output processing circuits
    • G01R31/31903—Tester hardware, i.e. output processing circuits tester configuration
    • G01R31/31905—Interface with the device under test [DUT], e.g. arrangements between the test head and the DUT, mechanical aspects, fixture

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
  • Tests Of Electronic Circuits (AREA)
EP16803876.8A 2015-05-29 2016-02-26 Verbesserte leistung von transienter stromversorgung (stromintegrität) für eine sondenkartenanordnung in einer testumgebung einer integrierten schaltung Withdrawn EP3304110A4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562168107P 2015-05-29 2015-05-29
PCT/US2016/019865 WO2016195766A1 (en) 2015-05-29 2016-02-26 Improved power supply transient performance (power integrity) for a probe card assembly in an integrated circuit test environment

Publications (2)

Publication Number Publication Date
EP3304110A1 EP3304110A1 (de) 2018-04-11
EP3304110A4 true EP3304110A4 (de) 2019-01-23

Family

ID=57441201

Family Applications (1)

Application Number Title Priority Date Filing Date
EP16803876.8A Withdrawn EP3304110A4 (de) 2015-05-29 2016-02-26 Verbesserte leistung von transienter stromversorgung (stromintegrität) für eine sondenkartenanordnung in einer testumgebung einer integrierten schaltung

Country Status (6)

Country Link
EP (1) EP3304110A4 (de)
JP (1) JP2018523135A (de)
KR (1) KR20180014781A (de)
CN (1) CN107710004A (de)
TW (1) TW201702613A (de)
WO (1) WO2016195766A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI617811B (zh) * 2016-04-22 2018-03-11 新特系統股份有限公司 探針卡
CN110824207B (zh) * 2018-08-08 2022-03-22 台湾中华精测科技股份有限公司 射频探针卡装置及其间距转换板
JP7170494B2 (ja) * 2018-10-15 2022-11-14 東京エレクトロン株式会社 中間接続部材及び検査装置
TWI684772B (zh) * 2019-03-11 2020-02-11 創意電子股份有限公司 檢測裝置及其探針座
US11143690B2 (en) * 2019-10-02 2021-10-12 Nanya Technology Corporation Testing structure and testing method
CN114860054B (zh) * 2022-07-05 2022-10-14 之江实验室 一种针对晶圆级处理器的供电装置
TWI798125B (zh) * 2022-07-05 2023-04-01 中華精測科技股份有限公司 可拆式測試裝置、及其固持座與轉板模組
JP2024084569A (ja) * 2022-12-13 2024-06-25 東京エレクトロン株式会社 接続組立体、および検査装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6336269B1 (en) * 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
US20020132501A1 (en) * 2001-03-16 2002-09-19 Eldridge Benjamin N. Wafer level interposer
WO2004001807A2 (en) * 2002-06-24 2003-12-31 Nanonexus, Inc. Construction structures and manufacturing processes for probe card assemblies and packages having wafer level springs
US20040239349A1 (en) * 2002-07-23 2004-12-02 Fujitsu Limited Probe card and testing method of semiconductor chip, capacitor and manufacturing method thereof
KR100707044B1 (ko) * 1999-05-27 2007-04-13 나노넥서스, 인코포레이티드 집적회로 웨이퍼 프로브카드 조립체의 구조물 및 그 제조방법
US20100237889A1 (en) * 2009-02-19 2010-09-23 Touchdown Technologies, Inc. Probe head for a microelectronic contactor assembly, the probe head having smt electronic components thereon
US20150091179A1 (en) * 2013-09-27 2015-04-02 Qualcomm Mems Technologies, Inc. Semiconductor device with via bar

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4862077A (en) * 1987-04-29 1989-08-29 International Business Machines Corporation Probe card apparatus and method of providing same with reconfigurable probe card circuitry
AU4159996A (en) * 1994-11-15 1996-06-17 Formfactor, Inc. Interconnection elements for microelectronic components
US6060891A (en) * 1997-02-11 2000-05-09 Micron Technology, Inc. Probe card for semiconductor wafers and method and system for testing wafers
JP2003178847A (ja) * 2001-12-12 2003-06-27 Yamaichi Electronics Co Ltd Ｉｃソケット
JP4521611B2 (ja) * 2004-04-09 2010-08-11 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
US20070145989A1 (en) * 2005-12-27 2007-06-28 Hua Zhu Probe card with improved transient power delivery
KR100791945B1 (ko) * 2007-08-23 2008-01-04 (주)기가레인 프로브 카드
KR101598271B1 (ko) * 2013-07-26 2016-02-26 삼성전기주식회사 커패시터 내장형 프로브 카드용 기판 그 제조방법 및 프로브 카드

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6336269B1 (en) * 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
KR100707044B1 (ko) * 1999-05-27 2007-04-13 나노넥서스, 인코포레이티드 집적회로 웨이퍼 프로브카드 조립체의 구조물 및 그 제조방법
US20020132501A1 (en) * 2001-03-16 2002-09-19 Eldridge Benjamin N. Wafer level interposer
WO2004001807A2 (en) * 2002-06-24 2003-12-31 Nanonexus, Inc. Construction structures and manufacturing processes for probe card assemblies and packages having wafer level springs
US20040239349A1 (en) * 2002-07-23 2004-12-02 Fujitsu Limited Probe card and testing method of semiconductor chip, capacitor and manufacturing method thereof
US20100237889A1 (en) * 2009-02-19 2010-09-23 Touchdown Technologies, Inc. Probe head for a microelectronic contactor assembly, the probe head having smt electronic components thereon
US20150091179A1 (en) * 2013-09-27 2015-04-02 Qualcomm Mems Technologies, Inc. Semiconductor device with via bar

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2016195766A1 *

Also Published As

Publication number Publication date
EP3304110A1 (de) 2018-04-11
TW201702613A (zh) 2017-01-16
KR20180014781A (ko) 2018-02-09
CN107710004A (zh) 2018-02-16
JP2018523135A (ja) 2018-08-16
WO2016195766A1 (en) 2016-12-08

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