Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
  • H01J37/32889—Connection or combination with other apparatus
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
  • H01J37/32403—Treating multiple sides of workpieces, e.g. 3D workpieces
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/3266—Magnetic control means
  • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32733—Means for moving the material to be treated
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32733—Means for moving the material to be treated
  • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
  • H01J37/32761—Continuous moving
  • H01J37/32779—Continuous moving of batches of workpieces
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
  • H01J37/32899—Multiple chambers, e.g. cluster tools
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
  • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
  • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
  • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
  • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

Definitions

• the invention relates to an industrial plant for the plasma treatment of objects.
• the latter may be in particular hollow objects, having an interior volume delimited by a wall having an inner face and an outer face.
• objects are, among others, cups, bowls, flasks, cups, trays, pots, tubes or industrial molds.
• the invention relates more particularly to such an installation, in which the aforementioned objects undergo at least two successive plasma treatments.
• the invention relates to all the usual types of plasma treatment, among which will be mentioned, without limitation: cleaning, etching, activation, functionalization or deposition.
• the treated objects can be covered with at least two successive layers. These two layers may be of the same kind, in which case the final deposit has a greater thickness than that obtained by a single deposition phase. These two layers may also be of different natures, in which case each treatment step corresponds to a specific layer.
• a first gaseous mixture is then introduced, in order to generate a first type of plasma during a determined treatment time. In the case where the treatment is a deposit, this leads to the formation of the first layer on the surface of the objects. Then we stop the injection of the first reactive gases, which are evacuated. A second gaseous mixture is then introduced, within the same chamber, to deposit a second layer above the first layer previously formed. Similarly, it is possible to deposit at least one additional layer above the two initial layers.
• a plasma processing facility comprises a chamber that can be evacuated, which contains plasma chambers arranged one below the other, in one or two rows.
• a carrier makes it possible to move the objects between an upstream storage area and a downstream storage area. This document does not make it possible to overcome the shortcomings inherent in the two types of industrial solutions described above.
• a treatment apparatus comprising a vacuum chamber in which are formed two treatment chambers, separated by a partition. Each of them is equipped with at least one solid cathode associated with a respective magnetron. The treatment is carried out by sputtering, that is to say that the atoms of the solid cathode are torn off and then sent to the surface of the substrate.
• This method has significant disadvantages, especially in that it does not lend itself to use for objects in three dimensions. In other words, since the distance between the cathode and the substrate is predefined, this method is limited to flat substrates.
• Another objective of the invention is to propose an industrial installation that makes it possible to implement, in a simple and effective manner, at least two successive plasma treatments, in particular at least two different plasma treatments.
• Another object of the invention is to provide such an installation which allows rapid implementation, so as to ensure the processing of a large number of objects.
• Another object of the invention is to propose such an installation which allows the processing of objects of various shapes, in particular of three-dimensional objects.
• Another object of the invention is to propose such an installation which is accompanied by a flexible implementation, so as to vary in a convenient manner the nature of the treatments to which the objects are subjected.
• Another object of the invention is to provide such an installation, which has a relatively simple structure.
• a plasma object surface treatment installation comprising an enclosure, means for evacuation of this enclosure, a storage area for the objects to be treated. , said upstream storage area, a storage area of the treated objects, called downstream storage area, at least two plasma treatment chambers comprising means for injecting an active gas mixture, means for creating an electric discharge and means for confining the plasma in the interior volume of the chamber, means of transport between the storage areas and the chambers, characterized in that the conveying means are conveying means defining a conveying direction, in that the different chambers are placed one behind the other, according to the conveying direction, and in that the atmospheres of the different plasma treatment chambers are not hermetic with respect to each other.
• the injection means equipping the at least two chambers are connected to sources of gaseous mixture (S40 - S60), at least two gaseous mixtures being of different natures; in other words, at least one of the gas mixtures is different from the others.
• This characteristic is particularly advantageous since it makes it possible to form at least two plasma deposits of different types on the surface of the same object.
• At least one chamber has side walls, at least one side wall being hollowed with at least one notch (41; 141) allowing the passage of the conveying means and the objects to be treated, the other side walls being full.
• the notched side wall of the notch is removably attached to the other walls of the chamber, and there is provided at least one replacement side wall, hollowed out of a notch of different shape and / or size, adapted to fix on these other side walls.
• the means for confining the plasma are of electro-physical order, at least one chamber, in particular all the chambers, having in particular walls connected to the mass.
• the means for confining the plasma are of electromagnetic order, and in particular comprise at least one magnetron (90; 190) received in the interior volume of the chamber.
• the magnetron comprises at least one electromagnetic arrangement, each of which comprises a central magnet assembly (97, 91 '), the polarity of which is turned in a first direction, and a peripheral set of magnets (96, 96') , surrounding the central assembly, whose polarity is turned in the opposite direction.
• the means for confining the plasma are of a physical nature.
• the injection means comprise at least two tubular networks (42A, 42B, 142A, 142B), placed on either side of each object, in use, in order to perform a plasma deposition on two opposite faces of this object, the means for creating a discharge comprise at least one electrode (43; 143).
• the facing walls of two contiguous plasma chambers are distant and define an intermediate space (E45, E46), and suction means (P45, P46) are provided in said intermediate space.
• At least one of the upstream storage area and the downstream storage area comprises a screen cage (120), to prevent inadvertent contact of the objects with the plasma.
• At least one chamber comprises means for varying the characteristics of the plasma, in particular displacement means (44) able to move the means for creating a discharge and / or means (91) for moving the magnetron.
• the conveying direction is a longitudinal direction.
• the conveying means (30) comprise an endless belt (31) extending in the longitudinal conveying direction.
• the area (20) for storing the objects to be treated and the area (70) for storing the treated objects are provided in the vicinity of the two opposite ends of the endless belt.
• the plant further comprises an auxiliary evacuation chamber (80) and / or a room for ambient ambient (80 '), separated from the storage area of the workpieces (20) and at the storage area of the treated parts (70), by hermetic access means (82, 82 '), in particular by an airlock.
• auxiliary evacuation chamber (80) and / or a room for ambient ambient (80 ') separated from the storage area of the workpieces (20) and at the storage area of the treated parts (70), by hermetic access means (82, 82 '), in particular by an airlock.
• At least two plasma chambers have different main dimensions, according to the conveying direction, so that the treatment times in these two chambers are different.
• the conveying direction is a circular direction
• the conveying means comprise a rotating plate (130), having a support surface, in order to maintain the objects to be treated.
• the front walls of the chamber are hollowed with a section (141A) of passage of the plate, opening on the inner side wall (140C), this inner side wall being hollowed with a notch (141D) for passage of the plate.
• the upstream storage area (120) and the downstream storage area are combined.
• the conveying means are set in motion so as to circulate the objects in the plasma chambers from the upstream storage zone to the downstream storage zone.
• the conveying means are moved in the longitudinal direction, a first batch of objects is circulated in the plasma chambers from the upstream storage zone to the downstream storage zone, and the first batch is evacuated out of the zone; downstream storage and admits a next batch in the upstream storage area, while maintaining the enclosure under vacuum and while continuing to move the conveying means.
• the conveying means are set in motion in the circular direction, and the rotational speed of these conveying means is varied during the stay of the objects in at least one chamber.
• the conveying means are moved in the circular direction, according to more than one revolution, in order to pass the objects at least twice inside at least one plasma treatment chamber.
• different gaseous mixtures are injected into at least two chambers so as to generate plasmas of different natures in these chambers.
• Hollow objects are treated, having an interior volume delimited by a wall having an inner face and an outer face.
• the active gas mixture is activated by an electric field. Activated gas molecules are going diffusing into the reaction volume to the surface of the substrate and binding to form chemical bonds with the substrate materials.
• the components of the active gas mixture will thus form all or part of the final deposit, in a chemical form different from their original form.
• the process according to the invention is therefore to be distinguished in particular from sputtering, as described in WO 2014/127847. Indeed, this sputtering consists of spraying the material of the electrode to project it on the surface of the substrate and form all or part of the final deposit. In WO 2014/127847, the gaseous mixture only serves to spray the material of the electrode, so that it is not an active gas mixture within the meaning of the present invention.
• the invention uses means for confining the injected gas mixtures, as well as the plasmas generated. Any unacceptable mixture is thereby avoided, on the one hand between the gaseous mixtures injected into neighboring chambers, and on the other hand between the plasmas generated in these chambers. Therefore, the invention ensures the reliable implementation of a deposit involving layers different from each other, on the same object.
• the confinement between the gas mixtures can be in particular of a physical nature. For this purpose, it is possible in particular to provide each chamber with walls delimiting a minimum leakage space for the gases.
• the confinement between the plasmas can be first of electromorphic order, for example by connecting to the mass the walls which delimit the chambers.
• it can be of electromagnetic order, thanks for example to the presence of a magnetron.
• Figures 1 and 2 are views, respectively side and top, illustrating an installation according to a first embodiment of the invention.
• FIG. 3 is a perspective view, illustrating unstacking means belonging to the installation of FIGS. 1 and 2.
• FIGS. 4 and 5 are views illustrating, respectively from the front and from the side, the interior of a plasma chamber belonging to the installation of the previous figures.
• Figure 6 is a top view illustrating this plasma chamber.
• Figures 7 and 8 are views respectively in perspective and from above, illustrating a magnetron belonging to the installation of the preceding figures.
• Figure 9 is a perspective view of a magnet belonging to the magnetron of Figures 7 and 8.
• Figures 10 and 11 are views, respectively from above and at the end, illustrating an installation according to a second embodiment of the invention.
• Figures 12 and 13 are views illustrating, respectively front and side, the interior of a plasma chamber belonging to the installation of Figures 10 and 11.
• the following numerical references are used in this description:
• the enclosure 10 has thin walls, made of a conductive material or not.
• a sufficiently strong material will be chosen to withstand the evacuation in use. This will be for example a metallic material, such as stainless steel or aluminum, or glass.
• the dimensions of this enclosure are chosen according to the hourly quantity of objects to be treated. For information only, its length is between 2 and 5 meters, its width is between 0.5 and 1.5 meters, while its height is between 1.5 and 2.5 meters.
• the enclosure is equipped with a station 20 for unstacking the objects to be treated, a conveyor 30, three plasma chambers 40, 50 and 60, as well as a station 70 for stacking the objects once processed.
• there are, respectively upstream and downstream of the chamber 10, two additional chambers 80 and 80 ' which structure and function will be detailed in what follows. These rooms communicate with the enclosure, via respective access means 82 and 82 '.
• the latter which are of the air lock type or the like, can selectively create a seal between the enclosure and one or other of the aforementioned annex chambers.
• the station 20 is intended for unstacking the objects to be treated which are, in the illustrated example, cups G. As illustrated in particular in FIG. 3, which shows the station 20 at a different angle with respect to FIGS. 1 and 2, these cups are arranged along several P1 to P10 cells arranged next to each other, so as to form rows arranged one behind the other.
• This station 20 firstly comprises two unstacking bars 21 and 22, movable in translation in a back and forth motion.
• the station further comprises an arm 23, comprising an elongated body 24 and a U-shaped holding head 25.
• the wings 26 of this head 25 may be fixed or, as in the example shown, be moved away from each other or approach each other. .
• the conveyor 30 firstly comprises a conveyor belt 31, forming an endless loop which can be set in motion in the main direction of the enclosure, by conventional motor means not shown.
• the arrow F30 visible in FIGS. 1 and 2, shows the direction longitudinal conveying of this first embodiment.
• sleepers 32 visible in particular in Figure 3, are regularly distributed along this band.
• Each of these crosspieces 32 is secured to supports 33, intended to support the objects during the processing operations.
• each support 33 has the overall shape of an S, being provided with an end pad 34, providing a satisfactory support for the cup with which it cooperates.
• the distance D32 separating two adjacent sleepers is chosen according to the size of the cups, in particular to prevent inadvertent contact between the cups of two adjacent rows.
• the chamber 40 of parallelepipedal shape, is indicative of the following dimensions:
• width 140 between 0.1 and 1.5 meters
• the chamber 40 is delimited by six walls, that is front walls 40A and 40B rear, two side walls 40C and 40D, and upper walls 40E and lower 40F. These walls, whose thickness is for example between 0.1 and 1.0 meters, are made of a conductive material, such as stainless steel, and are connected to the ground.
• the chamber is fixed against the walls of the enclosure by any appropriate means, not shown.
• each end wall 40A, 40B is hollowed out with a respective notch 41, intended for the passage of the strip, supports and cups.
• each notch consists of a horizontal section 41A cooperating with the strip, of a plurality of vertical sections 41B, each of which cooperates with a respective support, as well as a plurality of lights 41C, each of which cooperates with a respective cup.
• Each front notch is adapted to the dimensions of the strip, the supports and cups, in that it allows the passage of these elements while providing a spacer space that is as small as possible. This makes it possible to confine the internal volume of the plasma chamber, in order to limit gas mixture leakage outside this volume.
• front walls 40A and 40B are removably attached by any suitable means to the other walls of the chamber. These front walls can then be replaced, if necessary, by at least one set of additional front walls, in which are provided notches different in shape and / or size.
• the chamber 40 further comprises injection means of active gas mixture, capable of forming a plasma in use.
• injection means comprise a first tubular network 42A, said upper, placed above the cups, and a second tubular network 42B, said lower, placed below the cups.
• These networks are powered by a source S40 gas mixture, provided for example outside the enclosure.
• S40 gas mixture provided for example outside the enclosure.
• S50 and S60 also indicate the sources of gaseous mixtures, intended to be injected into the chambers 50 and 60.
• the gaseous mixtures originating from the sources S40 to S60 are also different.
• the sources S40 to S60 are illustrated in FIG. 1, the source S40 being also shown diagrammatically in FIG. 6. On the other hand, in FIG. 1, the various tubular injection networks communicating with these sources are not illustrated.
• the chamber 40 further comprises a planar metal electrode, generally designated by the reference 43. This electrode, which can be cooled by any appropriate means, not shown, is connected to the potential of a not shown generator of conventional type.
• the counter-electrode is constituted by another metal plate, not shown, placed under the endless belt 31 of the conveyor. It is electrically insulated from the walls of the enclosure and can be left floating, or connected to the generator or ground.
• the electrode 43 is supported by insulating rods 44 which are slidably mounted relative to the upper wall of the chamber. Under these conditions, the height of this electrode can be modified, according to the arrow F43, to vary the characteristics of the plasma.
• the electrodes of the three plasma chambers are connected to different generators, which allows treatment at different powers and pressures. Moreover, these generators can advantageously be synchronized, which makes it possible to avoid electromagnetic disturbances.
• a magnetron In the lower part of the chamber 40, namely below the band 31, there is provided a magnetron generally designated by the reference 90.
• This magnetron is supported by insulating suspension rods 91, similar to those 44, which are slidably mounted relative to the lower wall of the chamber. Under these conditions, the height of this magnetron can be modified, according to the arrow F90, in order to vary the characteristics of the plasma.
• This magnetron may be associated with a cooling circuit, not shown.
• it is electrically isolated and can be placed at the floating potential, or else be connected to the generator or ground.
• the magnetron 90 comprises two metal plates 92 and 93, optionally cooled.
• One 92 of these plates is full, while the other 93 is hollowed different grooves.
• Each peripheral groove 94 and 94 ' receives a series of magnets 96 and 96' placed one behind the other in a closed loop.
• Figure 9 illustrates one of these magnets 96, the North Pole N is turned upwards.
• a second series of magnets 97, 97 ' is placed in a respective central groove 95, 95'.
• the south pole of these inner magnets 97, 97 ' is turned upwards, to see that their polarity is opposite that of the peripheral magnets 96, 96'.
• the magnetron makes it possible to confine, in use, the plasma generated in a given chamber and, as a result, to reduce the contamination with the plasmas produced in the other chambers of the installation. This confinement is also achieved thanks to the presence of the walls of the chamber, which are connected to the mass. It will be noted that this confinement is implemented without the atmosphere of each chamber being made hermetic, in particular by an airlock system.
• the magnetron comprises two adjacent and identical electromagnetic arrangements, each of which is formed by a series of inner magnets 97 or 97 ', surrounded by a series of peripheral magnets 96 or 96' extending in a closed loop. .
• the magnetron is formed by a single arrangement of this type, or that it comprises a number of arrangements greater than two.
• the use of a magnetron is also advantageous in that it increases the ion bombardment, which induces a densification of the layers during the deposition phase. This use also increases the growth rate and the adhesion between the nanometric layer and the substrate to be treated, which can be made of various materials such as plastic, metal, glass or ceramic.
• the magnets composing the magnetron can be of different strengths and dimensions, depending on the operating configurations. Electromagnets can also be used instead of permanent magnets. With reference to FIG. 8, it is advantageous for the length L90 of the magnetron, namely the largest distance of each peripheral series of magnets 96 or 96 ', to be greater than the width 131 of the endless band. This makes it possible to improve the technical effect of the magnetron.
• D45 and D56 denote the distances between two contiguous chambers, separating their adjacent walls. Typically, each of these distances is between 5 and 20 centimeters.
• E45 and E56 the interspace, delimited between each pair of chambers.
• pumping means P45 and P46 are placed in each of these spaces, which avoids inadvertent contact between the gaseous fractions likely to escape from the different rooms. These pumping means P45 and P46 also advantageously constitute the means for evacuating the enclosure 10.
• Each batch I to IV is formed of rows R1 to Rn, each of which consists of different stacks next to each other, as shown in FIG.
• a preliminary preparation phase is carried out.
• the chamber is first placed under vacuum, at a pressure typically less than 1.10 -3 mbar.
• the different gaseous mixtures are then introduced into each plasma chamber, from the sources S40 to S60, to give a stable pressure, typically between 10 -2 and 5.10 -1 mbar, inside each chamber.
• a stabilization time is then observed, typically between 1 and 10 seconds.
• Each plasma is then generated, in a manner known per se, in a respective chamber. After a stabilization time typically of a few seconds, the endless band is set in motion, then is advantageously not stopped during the rest of the implementation.
• the bars 21 and 22 are set in motion (arrow F21) to allow the fall by gravity of a single cup G '1 to G' 10 at the bottom of each stack.
• This cup is then supported by the head 25 of the arm 23, which is set in motion (arrow F23), on the one hand in horizontal translation at the same speed as the band 31 and, on the other hand, in translation towards down towards this band.
• each head When each head is close to a respective support, it releases the cup it held by spreading wings 26 (arrows F26).
• Each cup then rests on a respective support, then is moved in translation along the different chambers. It then undergoes three appropriate treatments, of the same nature or of different natures as has been explained above. Since the speed of the band is advantageously kept constant, the times of each individual treatment can be adjusted according to the length of the chambers.
• the cups of batch I are again arranged in the form of batteries, in a manner known per se, in the station 70.
• the batch II is placed in the chamber upstream 80, in which it is evacuated, while the batch IV is placed in the downstream chamber 80 ', within which it is put back to ambient atmosphere.
• the separation means 82 and 82 ' are activated, so that there is a seal between the interior volumes of the enclosure 10 and two annex rooms 80, 80 '.
• the batch IV is evacuated from the downstream auxiliary chamber 80 '.
• the latter is placed under vacuum, as is the upstream auxiliary chamber 80.
• Lot I of the enclosure is then transferred to this downstream chamber 80 ', and the next batch II is admitted into the chamber from the upstream chamber 80.
• the seal between the enclosure and these two additional chambers is then restored, then batch II is treated in the same manner as described above for batch I.
• lot III is admitted into the Upstream chamber and it is put under vacuum, while it puts the room I back in the room downstream.
• the endless belt is continuously set in motion and the enclosure is permanently placed under vacuum, without risk of malfunction.
• the enclosure is in communication with the annexed rooms, the latter are under vacuum.
• these ancillary rooms communicate with the outside, for the transfer of treated batches to treat, these rooms are then hermetically insulated from the enclosure.
• Figures 10 to 13 describe a second embodiment, wherein the objects to be treated are moved in a rotational movement.
• the elements Mechanical analogous to those of Figures 1 to 9 are assigned the same reference numbers, increased by 100.
• the installation according to this second embodiment firstly comprises an enclosure 110, provided with evacuation means, shown schematically and assigned the reference 111.
• This enclosure 110 has thin walls, similar to those of the enclosure 10. It is equipped with a door 112, allowing access to its interior volume.
• This enclosure 110 which is cylindrical in shape, has a less elongated shape than the enclosure 10. As a purely indicative, its length is between 0.5 and 2.0 meters, while its diameter is between 0.5 and 1.5 meters.
• the enclosure is equipped with a storage station 120, a conveyor 130, and two plasma chambers 140 and 150.
• the conveyor is formed by a tray, made for example in the form of an aluminum disc. Non-limiting, the thickness of this disc is between 0.5 and 2.0 centimeters, especially close to 1 centimeter, while its diameter is between 40 and 140 centimeters, especially close to 80 centimeters.
• the storage station 120 is advantageously made in the form of a wire cage, connected to the ground. This arrangement makes it possible to protect the objects stored in the cage with respect to a plasma that escapes in a substantial quantity from one of the chambers 140, 150. Consequently, the time for processing the objects is perfectly controlled, since it is limited to the residence time inside the plasma chambers.
• the plate 130 is supported by a metal rod 132, itself connected to a motor, not shown, placed at outside the enclosure.
• the plate can therefore rotate about the main axis of the rod, namely that it can typically rotate around this vertical axis.
• Arrow F130 visible in Figure 10, materializes the circular conveying direction of this second embodiment.
• the motor has a variable speed, so that the speed of the plate 130 can be modulated between each chamber to modify the processing time.
• this plate is electrically isolated thanks to an insulating support, not shown, interposed between the plate and the rod.
• Two brushes also not shown, made for example carbon or the like, to connect the plate indifferently to the mass or the return of the generator equipping each plasma chamber.
• the plate is provided with not shown supports, for the purpose of maintaining the objects to be treated. In the case where these supports are conductive, they can be designed to serve as antennas and change the distribution of the electric field in the vicinity of objects.
• the chambers 140 and 150 which are substantially identical, are generally similar to those 40 to 60 of the first embodiment.
• the chamber 140 has six walls, the lateral walls 140D, 140E and 140F of which are solid respectively.
• Each front wall 140A, 140B is hollowed out with a respective notch 141, intended for the passage of the plate, supports and objects.
• the shape of the notch 141 differs from that 41 of the first mode, in that the horizontal section 141A, cooperating with the plate, opens on the internal lateral wall 140C of the 140 This chamber 140C is also hollowed with a notch 141D, allowing the displacement of the plate, which extends between the opposite end faces.
• the vertical sections 141B and the slots 141C of the slot 141 are in contrast similar to the elements 41B and 41C, described in particular with reference to FIG.
• each notch allows the passage of the tray, supports and objects to be treated, while providing a spacer space that is as small as possible.
• the front walls 140A and 140B are detachably secured by any suitable means to the other walls of the chamber.
• each chamber 140, 150 is equipped, as in the first embodiment, with injection means 142A and 142B, an electrode 143 and a magnetron 190.
• the objects to be processed are first placed on the plate, then a preliminary preparation phase is carried out, in a manner similar to that described above for the first embodiment.
• the enclosure is placed under vacuum, then the various gas mixtures are admitted, a stabilization time is observed and each plasma is generated in a respective chamber.
• the plate is rotated, so that the objects to be treated circulate in each chamber, in order to undergo the desired treatment.
• the treatment time within a given chamber can be modified by playing, not on the dimensions of the chamber, but on the speed of rotation. So, if we slow down the plateau, its length of stay is extended and the treatment time is increased.
• a pretreatment mixture can first be injected into the chamber 140 for the first turn of the objects and then, in the next rotation, subject the latter to another gaseous mixture within the same chamber, in order to coat the surface of these objects.
• the objects are again directed into the screen cage of the station 120, which prevents them from being inadvertently subjected to a plasma.
• Each plasma is then stopped before the residual gaseous mixtures are evacuated.
• the interior volume of the chamber is returned to atmospheric pressure, in order to extract the treated objects.

Landscapes

• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Plasma & Fusion (AREA)
• Chemical & Material Sciences (AREA)
• Analytical Chemistry (AREA)
• General Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Physical Or Chemical Processes And Apparatus (AREA)
• Plasma Technology (AREA)
• Chemical Vapour Deposition (AREA)
• ing And Chemical Polishing (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=53200179

Family Applications (1)

Country Status (4)

Families Citing this family (2)

Family Cites Families (10)

• 2015
  • 2015-03-31 FR FR1552733A patent/FR3034434B1/fr active Active
• 2016
  • 2016-03-29 EP EP16717427.5A patent/EP3278350A1/de not_active Withdrawn
  • 2016-03-29 WO PCT/FR2016/050699 patent/WO2016156728A1/fr active Application Filing
  • 2016-03-29 US US15/560,605 patent/US10903058B2/en active Active

Also Published As

Similar Documents

Legal Events