EP3265850A1 - Folie aus metall oder einer metalllegierung - Google Patents
Folie aus metall oder einer metalllegierungInfo
- Publication number
- EP3265850A1 EP3265850A1 EP16720042.7A EP16720042A EP3265850A1 EP 3265850 A1 EP3265850 A1 EP 3265850A1 EP 16720042 A EP16720042 A EP 16720042A EP 3265850 A1 EP3265850 A1 EP 3265850A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- graphene
- film
- silicon
- film according
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 12
- 239000002184 metal Substances 0.000 title claims abstract description 12
- 229910001092 metal group alloy Inorganic materials 0.000 title claims abstract description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 10
- 229910021389 graphene Inorganic materials 0.000 claims description 40
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- 239000011248 coating agent Substances 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 18
- 239000011888 foil Substances 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910000592 Ferroniobium Inorganic materials 0.000 claims description 4
- -1 Kupferoxidal Chemical compound 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- ZFGFKQDDQUAJQP-UHFFFAOYSA-N iron niobium Chemical compound [Fe].[Fe].[Nb] ZFGFKQDDQUAJQP-UHFFFAOYSA-N 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000011669 selenium Substances 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052714 tellurium Inorganic materials 0.000 claims description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910001020 Au alloy Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910000807 Ga alloy Inorganic materials 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000009377 nuclear transmutation Methods 0.000 claims description 3
- 229910001954 samarium oxide Inorganic materials 0.000 claims description 3
- 229940075630 samarium oxide Drugs 0.000 claims description 3
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 claims description 3
- 239000003353 gold alloy Substances 0.000 claims description 2
- 239000002103 nanocoating Substances 0.000 claims description 2
- 239000002105 nanoparticle Substances 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 238000010025 steaming Methods 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 12
- 239000012790 adhesive layer Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- FEBJSGQWYJIENF-UHFFFAOYSA-N nickel niobium Chemical compound [Ni].[Nb] FEBJSGQWYJIENF-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/64—Carriers or collectors
- H01M4/66—Selection of materials
- H01M4/661—Metal or alloys, e.g. alloy coatings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02444—Carbon, e.g. diamond-like carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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- H—ELECTRICITY
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- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
- H01M4/0402—Methods of deposition of the material
- H01M4/0421—Methods of deposition of the material involving vapour deposition
- H01M4/0423—Physical vapour deposition
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- H—ELECTRICITY
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- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/134—Electrodes based on metals, Si or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/362—Composites
- H01M4/366—Composites as layered products
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- H—ELECTRICITY
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- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
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- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/386—Silicon or alloys based on silicon
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- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/58—Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy; of polyanionic structures, e.g. phosphates, silicates or borates
- H01M4/583—Carbonaceous material, e.g. graphite-intercalation compounds or CFx
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Definitions
- the invention relates to a foil made of metal or a metal alloy, in particular a foil made of aluminum or an aluminum alloy, a so-called neutrino or Ntrino foil (registered trademarks), a process for the production and use of a foil of metal or a metal alloy.
- Metal foils especially aluminum foils, are well known in the art.
- the object of the present invention is to further improve metal foils, in particular aluminum foils. These can then serve to convert invisible solar energy into direct current, this is done in particular by neutrino radiation is converted into energy.
- This object is achieved according to a first aspect of the invention by a film of metal or a metal alloy, wherein the film has a coating comprising graphene and silicon.
- the film has a coating comprising graphene and silicon.
- On the metallic support in different processes (vapor-deposited, sprayed, glued on) further materials are applied in a different sequence.
- the effect achieved is that kinetic energy of radiations (the invisible spectrum of solar or space radiation such as neutrinos) is converted into electricity. This is done by a nanotechnologically modified lattice structure of the applied materials.
- the modified and compressed lattice structure serves as a braking medium (for example, doped graphene) which slows the wave by about 0.1% by causing molecules of the non-visible spectrum of the solar or space energy to strike molecules of the compacted, so non-natural lattice structure .
- the pendulum motion is transferred in the next step to a conductive medium (e.g., silicon) and then to the transfer medium (e.g., aluminum, silver, gallium, etc.).
- a conductive medium e.g., silicon
- the transfer medium e.g., aluminum, silver, gallium, etc.
- the metallic carrier or metal alloy may be a common alloy.
- the foil is made of silver, gold, copper, gallium or aluminum or one of its alloys, in particular of a silver or gold alloy or an aluminum-gallium alloy.
- a film made of aluminum or an aluminum alloy has cost advantages.
- a foil made of silver or a silver alloy will achieve better results.
- An aluminum alloy may be a common aluminum metal alloy.
- an aluminum-gold or -silver alloy is possible.
- Other alloys, such as aluminum-manganese, magnesium, copper, silicon, nickel, zinc, beryllium, and mixtures thereof are also possible.
- the film is made of an aluminum gallium alloy or of gold or silver, a gold or silver alloy. This has the merit of higher conductivity by increasing the flow rate.
- the film has a thickness of 0.01 mm to 4 mm, preferably from 0.01 mm to 1 mm, particularly preferably 0.05 mm - 1 mm.
- the coating may comprise about 10% to 80% silicon, preferably 10% to 50% silicon, particularly preferably 25% silicon.
- the coating may have 20% to 90% graphene, preferably 50% to 90% graphene, most preferably 75% graphene.
- the coating has organic or inorganic adhesive components.
- Other common bonding methods other than bonding, for example, by applying are advantageous.
- the coating can be carried out in individual layered substances or by means of a mixture. It is particularly advantageous if the nanotechnologically processed substances are individually stratified, as this results in a higher efficiency, that is, more electricity is produced. It is particularly advantageous if the coating is a nano-coating in which graphene and silicon are present as nanoparticles.
- the particles of the Silicon have a size of 5nm to 500nm, more preferably 5nm, and that of graphene 20nm to 500nm, more preferably 20nm, since the smaller the particles are, the higher the efficiency is.
- Vorteühaft know the coating alternately layers of silicon and graphene, in particular 10 to 20 silicon graphene layers in particular 12 silicon graphene has layers.
- 12 layers are particularly advantageous because after 12 layers, the voltage decreases again.
- the performance of the film can be increased when applied to the silicon germanium, selenium, Kupferoxidal or tellurium.
- Other experiments that increased performance were made with tantalum, niobium, molybdenum, and antimony.
- the doping of the graphene contributes significantly to the increase in performance.
- both a doping in a vacuum by ion implantation as well as a neutron transmutation doping can be doped with the ions of the following particles. Ferroniobium, nickel niobium, yttrium or samarium oxide.
- the coating should preferably take place with exclusion of air, since, depending on the doping, the oxidation effect occurs more quickly. Even after the coating has been completed, the sequence should be sealed, as the air seal increases the stability.
- 757g of all materials are used on 1km A 2.
- the metallic carrier represents the negative pole, the graph the positive pole.
- the film can be rolled or stacked to achieve the highest values.
- a DinA4 film can be 1 watt, if you stack the films to a mobile power plant, an insulating layer should be placed between the films.
- the power generation causes no decomposition of the conductor.
- the conductor has a negative temperature coefficient. The optimum is 26.2 to 26.7 ° C.
- the film can be used underground and in the water and works better at night than during the day.
- a second aspect of the invention relates to a method for producing a film from a metal or a metal alloy, in particular a film according to the invention wherein in a first step, a silicon layer is applied to the film, in particular by spraying or steaming, in a second step, the silicon layer cured, dried and is flushed with liquid nitrogen, in a third step, a graphene layer is applied to the film and cured in a fourth step, the graphene layer, dried and rinsed with liquid nitrogen.
- germanium, selenium, copper oxide, tellurium, tantalum, niobium, molybdenum and / or antimony can be applied in a further step.
- the graphene can be doped, in particular with ferroniobium, nickel niumium, yttrium or samarium oxide, in particular by ion implantation or by neutron transmutation doping.
- a third aspect of the invention relates to a method for producing a film of aluminum or an aluminum alloy, wherein in a first step graphene and silicon are pulverized and mixed and in a second step the pulverized graphene and silicon are applied to the film.
- a fourth aspect of the invention relates to a method for producing a film of aluminum or an aluminum alloy, in particular for producing a film according to the invention, wherein in a first step graphene and silicon are pulverized and mixed and in a second step an adhesive layer is applied to the film and in a third step, the powdered graphene and silicon are applied to the adhesive layer.
- Other common bonding methods other than bonding, for example, by applying are advantageous.
- a fifth aspect of the invention relates to a method for producing a film of aluminum or an aluminum alloy, in particular for producing a film according to the invention, wherein graphene and silicon are pulverized and mixed in a first step and mixed with an adhesive in a second step Silicon and graphene powder is mixed and in a third step, the mixture is applied to the film or firmly connected to the film.
- Other common bonding methods other than bonding, for example, by applying are advantageous.
- a sixth aspect of the invention relates to a method for producing a film of aluminum or an aluminum alloy, in particular for producing a film according to the invention, wherein in a first step, an adhesive layer is applied to the film and applied in a second step, a graphene and / or silicon layer and in a third step, a second adhesive layer is applied to the film and in a fourth step, a further silicon and / or graphene layer is applied to the film.
- Other common bonding methods other than bonding, for example, by applying are advantageous.
- a seventh aspect of the invention relates to a use of a film according to the invention for the production of direct current from invisible solar energy.
- the mode of operation can be summed up as follows: Nature has relatively "wide-meshed” molecules, so that the neutrinos fly through because of the low mass, so the atoms in the molecules as well as the molecules in the material structure must be so tightly “packed” that part of the neutrinos can not fly through without touching the particles.
- the surface of the film therefore has nanotechnologically processed structures, so that analogous to a mechanical pendulum chain, the molecules abut each other and thus from the mass and the kinetic energy of a molecule flow and current flow is created (so-called lattice-guiding effect). This is analogous to a current flow in a line to understand: by magnet and coil, the molecules are set in motion in the generator and so we can use the electricity.
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- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
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Application Number | Priority Date | Filing Date | Title |
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DE102015002789 | 2015-03-06 | ||
DE102015014721 | 2015-11-17 | ||
PCT/EP2016/000410 WO2016142056A1 (de) | 2015-03-06 | 2016-03-07 | Folie aus metall oder einer metalllegierung |
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EP3265850A1 true EP3265850A1 (de) | 2018-01-10 |
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EP16720042.7A Pending EP3265850A1 (de) | 2015-03-06 | 2016-03-07 | Folie aus metall oder einer metalllegierung |
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US (2) | US20180053941A1 (de) |
EP (1) | EP3265850A1 (de) |
WO (1) | WO2016142056A1 (de) |
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DE102018009125A1 (de) * | 2018-11-21 | 2020-05-28 | Neutrino Deutschland Gmbh | Folie aus Metall oder einer Metalllegierung |
DE102019008982A1 (de) | 2019-12-23 | 2021-06-24 | Neutrino Deutschland Gmbh | Folie mit Beschichtung |
EP4245917A1 (de) | 2022-03-14 | 2023-09-20 | Jürgen Frenzel | Stahlmonoblockschwelle und verfahren zu deren herstellung |
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WO2012125853A1 (en) * | 2011-03-16 | 2012-09-20 | The Regents Of The University Of California | Method for the preparation of graphene/silicon multilayer structured anodes for lithium ion batteries |
CN103035889B (zh) * | 2011-10-09 | 2015-09-23 | 海洋王照明科技股份有限公司 | 石墨烯/纳米硅复合电极片及其制备方法 |
CN103515604A (zh) * | 2012-06-21 | 2014-01-15 | 海洋王照明科技股份有限公司 | 硅纳米线-石墨烯复合材料及其制备方法、锂离子电池 |
TWI461555B (zh) * | 2013-06-26 | 2014-11-21 | Univ Nat Taiwan Science Tech | 一種多層膜矽/石墨烯複合材料陽極結構 |
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2016
- 2016-03-07 EP EP16720042.7A patent/EP3265850A1/de active Pending
- 2016-03-07 WO PCT/EP2016/000410 patent/WO2016142056A1/de active Application Filing
- 2016-03-07 US US15/555,595 patent/US20180053941A1/en not_active Abandoned
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2021
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US20180053941A1 (en) | 2018-02-22 |
WO2016142056A1 (de) | 2016-09-15 |
US20210135235A1 (en) | 2021-05-06 |
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