EP3265850A1 - Feuille en métal ou constituée d'un alliage métallique - Google Patents

Feuille en métal ou constituée d'un alliage métallique

Info

Publication number
EP3265850A1
EP3265850A1 EP16720042.7A EP16720042A EP3265850A1 EP 3265850 A1 EP3265850 A1 EP 3265850A1 EP 16720042 A EP16720042 A EP 16720042A EP 3265850 A1 EP3265850 A1 EP 3265850A1
Authority
EP
European Patent Office
Prior art keywords
graphene
film
silicon
film according
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP16720042.7A
Other languages
German (de)
English (en)
Inventor
Holger Thorsten SCHUBART
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Neutrino Deutschland GmbH
Original Assignee
Neutrino Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Neutrino Deutschland GmbH filed Critical Neutrino Deutschland GmbH
Publication of EP3265850A1 publication Critical patent/EP3265850A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/64—Carriers or collectors
    • H01M4/66—Selection of materials
    • H01M4/661—Metal or alloys, e.g. alloy coatings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02444—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H01M4/0402—Methods of deposition of the material
    • H01M4/0421—Methods of deposition of the material involving vapour deposition
    • H01M4/0423—Physical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/134—Electrodes based on metals, Si or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/362—Composites
    • H01M4/366—Composites as layered products
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
    • H01M4/386—Silicon or alloys based on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/58—Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy; of polyanionic structures, e.g. phosphates, silicates or borates
    • H01M4/583—Carbonaceous material, e.g. graphite-intercalation compounds or CFx
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Definitions

  • the invention relates to a foil made of metal or a metal alloy, in particular a foil made of aluminum or an aluminum alloy, a so-called neutrino or Ntrino foil (registered trademarks), a process for the production and use of a foil of metal or a metal alloy.
  • Metal foils especially aluminum foils, are well known in the art.
  • the object of the present invention is to further improve metal foils, in particular aluminum foils. These can then serve to convert invisible solar energy into direct current, this is done in particular by neutrino radiation is converted into energy.
  • This object is achieved according to a first aspect of the invention by a film of metal or a metal alloy, wherein the film has a coating comprising graphene and silicon.
  • the film has a coating comprising graphene and silicon.
  • On the metallic support in different processes (vapor-deposited, sprayed, glued on) further materials are applied in a different sequence.
  • the effect achieved is that kinetic energy of radiations (the invisible spectrum of solar or space radiation such as neutrinos) is converted into electricity. This is done by a nanotechnologically modified lattice structure of the applied materials.
  • the modified and compressed lattice structure serves as a braking medium (for example, doped graphene) which slows the wave by about 0.1% by causing molecules of the non-visible spectrum of the solar or space energy to strike molecules of the compacted, so non-natural lattice structure .
  • the pendulum motion is transferred in the next step to a conductive medium (e.g., silicon) and then to the transfer medium (e.g., aluminum, silver, gallium, etc.).
  • a conductive medium e.g., silicon
  • the transfer medium e.g., aluminum, silver, gallium, etc.
  • the metallic carrier or metal alloy may be a common alloy.
  • the foil is made of silver, gold, copper, gallium or aluminum or one of its alloys, in particular of a silver or gold alloy or an aluminum-gallium alloy.
  • a film made of aluminum or an aluminum alloy has cost advantages.
  • a foil made of silver or a silver alloy will achieve better results.
  • An aluminum alloy may be a common aluminum metal alloy.
  • an aluminum-gold or -silver alloy is possible.
  • Other alloys, such as aluminum-manganese, magnesium, copper, silicon, nickel, zinc, beryllium, and mixtures thereof are also possible.
  • the film is made of an aluminum gallium alloy or of gold or silver, a gold or silver alloy. This has the merit of higher conductivity by increasing the flow rate.
  • the film has a thickness of 0.01 mm to 4 mm, preferably from 0.01 mm to 1 mm, particularly preferably 0.05 mm - 1 mm.
  • the coating may comprise about 10% to 80% silicon, preferably 10% to 50% silicon, particularly preferably 25% silicon.
  • the coating may have 20% to 90% graphene, preferably 50% to 90% graphene, most preferably 75% graphene.
  • the coating has organic or inorganic adhesive components.
  • Other common bonding methods other than bonding, for example, by applying are advantageous.
  • the coating can be carried out in individual layered substances or by means of a mixture. It is particularly advantageous if the nanotechnologically processed substances are individually stratified, as this results in a higher efficiency, that is, more electricity is produced. It is particularly advantageous if the coating is a nano-coating in which graphene and silicon are present as nanoparticles.
  • the particles of the Silicon have a size of 5nm to 500nm, more preferably 5nm, and that of graphene 20nm to 500nm, more preferably 20nm, since the smaller the particles are, the higher the efficiency is.
  • Vorteühaft know the coating alternately layers of silicon and graphene, in particular 10 to 20 silicon graphene layers in particular 12 silicon graphene has layers.
  • 12 layers are particularly advantageous because after 12 layers, the voltage decreases again.
  • the performance of the film can be increased when applied to the silicon germanium, selenium, Kupferoxidal or tellurium.
  • Other experiments that increased performance were made with tantalum, niobium, molybdenum, and antimony.
  • the doping of the graphene contributes significantly to the increase in performance.
  • both a doping in a vacuum by ion implantation as well as a neutron transmutation doping can be doped with the ions of the following particles. Ferroniobium, nickel niobium, yttrium or samarium oxide.
  • the coating should preferably take place with exclusion of air, since, depending on the doping, the oxidation effect occurs more quickly. Even after the coating has been completed, the sequence should be sealed, as the air seal increases the stability.
  • 757g of all materials are used on 1km A 2.
  • the metallic carrier represents the negative pole, the graph the positive pole.
  • the film can be rolled or stacked to achieve the highest values.
  • a DinA4 film can be 1 watt, if you stack the films to a mobile power plant, an insulating layer should be placed between the films.
  • the power generation causes no decomposition of the conductor.
  • the conductor has a negative temperature coefficient. The optimum is 26.2 to 26.7 ° C.
  • the film can be used underground and in the water and works better at night than during the day.
  • a second aspect of the invention relates to a method for producing a film from a metal or a metal alloy, in particular a film according to the invention wherein in a first step, a silicon layer is applied to the film, in particular by spraying or steaming, in a second step, the silicon layer cured, dried and is flushed with liquid nitrogen, in a third step, a graphene layer is applied to the film and cured in a fourth step, the graphene layer, dried and rinsed with liquid nitrogen.
  • germanium, selenium, copper oxide, tellurium, tantalum, niobium, molybdenum and / or antimony can be applied in a further step.
  • the graphene can be doped, in particular with ferroniobium, nickel niumium, yttrium or samarium oxide, in particular by ion implantation or by neutron transmutation doping.
  • a third aspect of the invention relates to a method for producing a film of aluminum or an aluminum alloy, wherein in a first step graphene and silicon are pulverized and mixed and in a second step the pulverized graphene and silicon are applied to the film.
  • a fourth aspect of the invention relates to a method for producing a film of aluminum or an aluminum alloy, in particular for producing a film according to the invention, wherein in a first step graphene and silicon are pulverized and mixed and in a second step an adhesive layer is applied to the film and in a third step, the powdered graphene and silicon are applied to the adhesive layer.
  • Other common bonding methods other than bonding, for example, by applying are advantageous.
  • a fifth aspect of the invention relates to a method for producing a film of aluminum or an aluminum alloy, in particular for producing a film according to the invention, wherein graphene and silicon are pulverized and mixed in a first step and mixed with an adhesive in a second step Silicon and graphene powder is mixed and in a third step, the mixture is applied to the film or firmly connected to the film.
  • Other common bonding methods other than bonding, for example, by applying are advantageous.
  • a sixth aspect of the invention relates to a method for producing a film of aluminum or an aluminum alloy, in particular for producing a film according to the invention, wherein in a first step, an adhesive layer is applied to the film and applied in a second step, a graphene and / or silicon layer and in a third step, a second adhesive layer is applied to the film and in a fourth step, a further silicon and / or graphene layer is applied to the film.
  • Other common bonding methods other than bonding, for example, by applying are advantageous.
  • a seventh aspect of the invention relates to a use of a film according to the invention for the production of direct current from invisible solar energy.
  • the mode of operation can be summed up as follows: Nature has relatively "wide-meshed” molecules, so that the neutrinos fly through because of the low mass, so the atoms in the molecules as well as the molecules in the material structure must be so tightly “packed” that part of the neutrinos can not fly through without touching the particles.
  • the surface of the film therefore has nanotechnologically processed structures, so that analogous to a mechanical pendulum chain, the molecules abut each other and thus from the mass and the kinetic energy of a molecule flow and current flow is created (so-called lattice-guiding effect). This is analogous to a current flow in a line to understand: by magnet and coil, the molecules are set in motion in the generator and so we can use the electricity.

Abstract

L'invention concerne une feuille en métal ou constituée d'un alliage métallique, en particulier une feuille en aluminium ou constituée d'un alliage d'aluminium, dite feuille Neutrino ou feuille Ntrino (marques déposées), un procédé de fabrication ainsi qu'une utilisation d'une feuille en métal ou constituée d'un alliage métallique.
EP16720042.7A 2015-03-06 2016-03-07 Feuille en métal ou constituée d'un alliage métallique Pending EP3265850A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102015002789 2015-03-06
DE102015014721 2015-11-17
PCT/EP2016/000410 WO2016142056A1 (fr) 2015-03-06 2016-03-07 Feuille en métal ou constituée d'un alliage métallique

Publications (1)

Publication Number Publication Date
EP3265850A1 true EP3265850A1 (fr) 2018-01-10

Family

ID=55910201

Family Applications (1)

Application Number Title Priority Date Filing Date
EP16720042.7A Pending EP3265850A1 (fr) 2015-03-06 2016-03-07 Feuille en métal ou constituée d'un alliage métallique

Country Status (3)

Country Link
US (2) US20180053941A1 (fr)
EP (1) EP3265850A1 (fr)
WO (1) WO2016142056A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018009125A1 (de) * 2018-11-21 2020-05-28 Neutrino Deutschland Gmbh Folie aus Metall oder einer Metalllegierung
DE102019008982A1 (de) 2019-12-23 2021-06-24 Neutrino Deutschland Gmbh Folie mit Beschichtung
EP4245917A1 (fr) 2022-03-14 2023-09-20 Jürgen Frenzel Traverse monobloc en acier et son procédé de fabrication

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012125853A1 (fr) * 2011-03-16 2012-09-20 The Regents Of The University Of California Procédé de préparation d'anodes à structure multicouche graphène/silicium pour batteries lithium-ion
CN103035889B (zh) * 2011-10-09 2015-09-23 海洋王照明科技股份有限公司 石墨烯/纳米硅复合电极片及其制备方法
CN103515604A (zh) * 2012-06-21 2014-01-15 海洋王照明科技股份有限公司 硅纳米线-石墨烯复合材料及其制备方法、锂离子电池
TWI461555B (zh) * 2013-06-26 2014-11-21 Univ Nat Taiwan Science Tech 一種多層膜矽／石墨烯複合材料陽極結構

Also Published As

Publication number Publication date
WO2016142056A1 (fr) 2016-09-15
US20180053941A1 (en) 2018-02-22
US20210135235A1 (en) 2021-05-06

Similar Documents

Publication Publication Date Title
DE102013200651B4 (de) Permanentmagnet und Motor und Stromerzeuger unter dessen Verwendung
DE112009001242B4 (de) Verfahren zum Herstellen einer Interkalationselektrode
EP3417498B1 (fr) Procede de production de anodes à base de silicium pour accumulateurs
DE112012004803T5 (de) Thermoelektrische Vorrichtung mit Grenzflächenmaterialien und Verfahren zur Herstellung derselben
WO2016142056A1 (fr) Feuille en métal ou constituée d'un alliage métallique
EP2984658A1 (fr) Aimant permanent anisotrope haute performance à structure nanoncristalline, lié par une matrice et exempt de terres rares, et son procédé de fabrication
WO2013144106A2 (fr) Procédé du domaine de la métallurgie des poudres pour fabriquer un composant thermoélectrique
EP3278423B1 (fr) Revêtement résistif pour un dispositif anti-effluves d'une machine électrique
WO2017042094A1 (fr) Procédé production de surfaces structurées
DE102013201370A1 (de) Permanentmagnet und Motor und Stromgenerator, der diesen verwendet
DE102017223268A1 (de) Verfahren zur Herstellung eines magnetischen Materials, magnetisches Material, Hartmagnet, Elektromotor, Starter und Generator
EP2571828B1 (fr) Composant pour la production de courant thermoélectrique et procédé de fabrication de ce composant
WO2010097228A2 (fr) Procédé de réalisation d'un semi-conducteur, semi-conducteur et composant électrique
JP7221402B2 (ja) 大気中のエネルギーを変換するためのデバイス及び該デバイスを製造するための方法
EP3398212B1 (fr) Matériau de conversion
EP3523829B1 (fr) Procédé d'impression à température ambiante servant à la production d'une succession de couches pv et succession de couches pv obtenue selon le procédé
DE102012000718A1 (de) Elektride enthaltende elektrische Energiespeicher auf Halbleiterbasis
DE102017102163B4 (de) Magnetokalorischer Wärmeübertrager und Verfahren zu seiner Herstellung
DE102012223556A1 (de) Verfahren zur Herstellung einer Solarzelle
WO2021129901A1 (fr) Film doté d'un revêtement
WO2023078988A1 (fr) Procédé de production de mousses de silicium riches en cuivre à partir de phases mixtes au moins binaires
DE19910182B4 (de) Verfahren zur Herstellung und Magnetisierung permanentmagnetischer Folien
DE102013005761A1 (de) Energiespeicher - eins
WO2020103965A1 (fr) Feuille constituée de métal ou d'un alliage métallique
WO2011141461A1 (fr) Composition thermoconductrice comprenant des nanotubes de carbone thermoconducteurs et une phase métallique continue

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20170929

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

RIN1 Information on inventor provided before grant (corrected)

Inventor name: SCHUBART, HOLGER THORSTEN

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

17Q First examination report despatched

Effective date: 20200214

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

TPAC Observations filed by third parties

Free format text: ORIGINAL CODE: EPIDOSNTIPA

APBK Appeal reference recorded

Free format text: ORIGINAL CODE: EPIDOSNREFNE

APBN Date of receipt of notice of appeal recorded

Free format text: ORIGINAL CODE: EPIDOSNNOA2E

APBR Date of receipt of statement of grounds of appeal recorded

Free format text: ORIGINAL CODE: EPIDOSNNOA3E

APAF Appeal reference modified

Free format text: ORIGINAL CODE: EPIDOSCREFNE