EP3127143A4 - Verfahren zum recycling von substraten und trägersubstraten - Google Patents

Verfahren zum recycling von substraten und trägersubstraten Download PDF

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Publication number
EP3127143A4
EP3127143A4 EP15773434.4A EP15773434A EP3127143A4 EP 3127143 A4 EP3127143 A4 EP 3127143A4 EP 15773434 A EP15773434 A EP 15773434A EP 3127143 A4 EP3127143 A4 EP 3127143A4
Authority
EP
European Patent Office
Prior art keywords
substrates
methods
recycling
carrier
carrier substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP15773434.4A
Other languages
English (en)
French (fr)
Other versions
EP3127143A1 (de
Inventor
Hilmi Volkan Demir
Swee Tiam TAN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanyang Technological University
Original Assignee
Nanyang Technological University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanyang Technological University filed Critical Nanyang Technological University
Publication of EP3127143A1 publication Critical patent/EP3127143A1/de
Publication of EP3127143A4 publication Critical patent/EP3127143A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6835—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
EP15773434.4A 2014-03-31 2015-02-16 Verfahren zum recycling von substraten und trägersubstraten Withdrawn EP3127143A4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201461972575P 2014-03-31 2014-03-31
PCT/SG2015/000048 WO2015152817A1 (en) 2014-03-31 2015-02-16 Methods of recycling substrates and carrier substrates

Publications (2)

Publication Number Publication Date
EP3127143A1 EP3127143A1 (de) 2017-02-08
EP3127143A4 true EP3127143A4 (de) 2017-11-29

Family

ID=54240965

Family Applications (1)

Application Number Title Priority Date Filing Date
EP15773434.4A Withdrawn EP3127143A4 (de) 2014-03-31 2015-02-16 Verfahren zum recycling von substraten und trägersubstraten

Country Status (5)

Country Link
EP (1) EP3127143A4 (de)
CN (1) CN106463451B (de)
EA (1) EA201691900A1 (de)
TW (1) TW201601192A (de)
WO (1) WO2015152817A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7059518B2 (ja) * 2017-04-03 2022-04-26 住友電気工業株式会社 半導体光素子を作製する方法
CN109037263A (zh) * 2017-06-09 2018-12-18 美商晶典有限公司 具有透光基材的微发光二极管显示模块及其制造方法
CN109728142B (zh) * 2017-10-31 2021-02-02 展晶科技(深圳)有限公司 发光二极管晶粒的制造方法
JP2021170595A (ja) * 2020-04-15 2021-10-28 国立大学法人東海国立大学機構 窒化ガリウム半導体装置およびその製造方法
CN112967992B (zh) * 2020-12-07 2022-09-23 重庆康佳光电技术研究院有限公司 外延结构的转移方法
TWI741911B (zh) * 2020-12-16 2021-10-01 環球晶圓股份有限公司 磊晶層去除方法
CN112786762B (zh) * 2021-01-04 2022-05-17 华灿光电（浙江）有限公司 发光二极管外延片及其制备方法
CN113257971B (zh) * 2021-06-30 2021-10-22 南昌凯捷半导体科技有限公司 一种红光mini-LED芯片的制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080038857A1 (en) * 2006-08-11 2008-02-14 Samsung Electro-Mechanics Co., Ltd Method of manufacturing nitride-based semiconductor light-emitting device
US20090253249A1 (en) * 2008-04-07 2009-10-08 Sony Corporation Method of manufacturing semiconductor device
US20120107962A1 (en) * 2010-11-01 2012-05-03 National Cheng Kung University Method of fabricating epitaxial semiconductor devices
US20130048945A1 (en) * 2011-08-22 2013-02-28 Lextar Electronics Corporation Light-emitting semiconductor structure and method for fabricating light-emitting diode device
US20130214284A1 (en) * 2012-02-17 2013-08-22 The Regents Of The University Of California Method for the reuse of gallium nitride epitaxial substrates

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030189215A1 (en) * 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
US8236583B2 (en) * 2008-09-10 2012-08-07 Tsmc Solid State Lighting Ltd. Method of separating light-emitting diode from a growth substrate
US8581229B2 (en) * 2009-11-23 2013-11-12 Koninklijke Philips N.V. III-V light emitting device with thin n-type region
US7781242B1 (en) * 2009-12-10 2010-08-24 Walsin Lihwa Corporation Method of forming vertical structure light emitting diode with heat exhaustion structure
WO2013004188A1 (zh) * 2011-07-07 2013-01-10 厦门市三安光电科技有限公司 太阳能电池，系统，及其制作方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080038857A1 (en) * 2006-08-11 2008-02-14 Samsung Electro-Mechanics Co., Ltd Method of manufacturing nitride-based semiconductor light-emitting device
US20090253249A1 (en) * 2008-04-07 2009-10-08 Sony Corporation Method of manufacturing semiconductor device
US20120107962A1 (en) * 2010-11-01 2012-05-03 National Cheng Kung University Method of fabricating epitaxial semiconductor devices
US20130048945A1 (en) * 2011-08-22 2013-02-28 Lextar Electronics Corporation Light-emitting semiconductor structure and method for fabricating light-emitting diode device
US20130214284A1 (en) * 2012-02-17 2013-08-22 The Regents Of The University Of California Method for the reuse of gallium nitride epitaxial substrates

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2015152817A1 *

Also Published As

Publication number Publication date
EP3127143A1 (de) 2017-02-08
CN106463451B (zh) 2019-07-16
WO2015152817A1 (en) 2015-10-08
EA201691900A1 (ru) 2017-05-31
TW201601192A (zh) 2016-01-01
CN106463451A (zh) 2017-02-22

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