Classifications

• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
  • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
  • C03C17/3423—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings comprising a suboxide
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
  • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
  • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
  • C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
  • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
  • C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
  • C03C17/3435—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a nitride, oxynitride, boronitride or carbonitride
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
  • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
  • C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
  • C03C17/3441—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising carbon, a carbide or oxycarbide
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
  • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
  • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
  • C03C17/3626—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer one layer at least containing a nitride, oxynitride, boronitride or carbonitride
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
  • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
  • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
  • C03C17/3649—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer made of metals other than silver
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
  • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
  • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
  • C03C17/3689—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer one oxide layer being obtained by oxidation of a metallic layer
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/0635—Carbides
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/0641—Nitrides
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/08—Oxides
  • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/14—Metallic material, boron or silicon
  • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
  • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
  • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/58—After-treatment
  • C23C14/5806—Thermal treatment
  • C23C14/5813—Thermal treatment using lasers
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C2217/00—Coatings on glass
  • C03C2217/90—Other aspects of coatings
  • C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
  • C03C2217/948—Layers comprising indium tin oxide [ITO]
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C2218/00—Methods for coating glass
  • C03C2218/10—Deposition methods
  • C03C2218/15—Deposition methods from the vapour phase
  • C03C2218/154—Deposition methods from the vapour phase by sputtering
  • C03C2218/156—Deposition methods from the vapour phase by sputtering by magnetron sputtering
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C2218/00—Methods for coating glass
  • C03C2218/30—Aspects of methods for coating glass not covered above
  • C03C2218/32—After-treatment

Definitions

• the invention relates to the manufacture of materials comprising a glass or glass-ceramic substrate and a coating comprising at least one thin layer of a transparent electrically conductive oxide.
• Transparent electro-conductive oxides called “TCO”, deposited in the form of thin layers on glass substrates, have multiple applications: their low emissivity makes them appreciable in energy transfer reduction applications (glazing with reinforced thermal insulation, glazing anti-condensation %), while their low electrical resistivity allows their use as electrodes, for example for solar cells, screens or active glazing, or as heating layers.
• These layers are often deposited by vacuum techniques, in particular magnetron cathode sputtering, and a subsequent heat treatment is often necessary in order to activate the layer, that is to say to reduce its electrical resistivity by improving its characteristics. crystallization.
• the application WO 2010/139908 describes a method of heat treatment by means of radiation, in particular infrared or visible laser radiation, focused on the layer.
• radiation in particular infrared or visible laser radiation
• Such a treatment makes it possible to heat the TCO layer very quickly without heating the substrate significantly.
• the temperature at any point on the face of the substrate opposite to the face carrying the layer is kept below 150 ° C., in particular 100 ° C during the heat treatment.
• Other types of radiation, such as that from flash lamps can also be used for the same purpose.
• the present invention aims to improve these techniques, by providing a method for obtaining an optically more homogeneous coating.
• the inventors have been able to demonstrate that in the case of TCOs, low heterogeneities of absorption of the layer or heterogeneities of treatment, for example in terms of the power of the radiation (for example the laser or the flash lamp ), could result after treatment very visible heterogeneities, especially color variations in reflection.
• the subject of the invention is a process for obtaining a material comprising a glass or glass-ceramic substrate coated on at least a part of at least one of its faces with a thin-film stack comprising at least one thin layer of an electrically conductive transparent oxide, said method comprising: a step of depositing said stack in which said thin layer of an electrically conductive transparent oxide is deposited as well as at least one homogenizing thin layer; , said thin homogenization layer being a metal layer or based on a metal nitride other than aluminum nitride, or based on a metal carbide, and then
• the radiation is in particular laser radiation focused on said coating in the form of at least one laser line. It can also be from at least one flash lamp.
• the heat treatment is advantageously such that during the treatment the temperature at any point of the face of the substrate opposite to that carrying the thin layer a transparent electrically conductive oxide does not exceed 150 ° C, especially 100 ° C and even 50 ° C.
• the subject of the invention is also a material that can be obtained by the process according to the invention.
• the inventors have been able to demonstrate that the presence in the stack of a metal layer or a metal nitride (other than aluminum nitride) or a metal carbide allowed to "erase” the effect combined heterogeneities of the TCO layer and the parameters of the radiation source (in particular of the laser line), and to obtain large substrates coated with one or more perfectly homogeneous TCO layer (s), especially from the point of view of optics.
• these thin layers are referred to as "homogenization layers" in this text.
• the substrate is glass or glass ceramic. It is preferably transparent, colorless (it is then a clear or extra-clear glass) or colored, for example blue, gray, green or bronze.
• the glass is preferably of the silico-soda-lime type, but it may also be of borosilicate or alumino-borosilicate type glass, in particular for high temperature applications (oven doors, chimney inserts, fireproof glazing).
• the substrate advantageously has at least one dimension greater than or equal to 1 m, or even 2 m and even 3 m.
• the thickness of the substrate generally varies between 0.1 mm and 19 mm, preferably between 0.7 and 9 mm, especially between 1 and 6 mm, or even between 2 and 4 mm.
• the glass substrate is preferably of the float type, that is to say likely to have been obtained by a process of pouring the molten glass on a bath of molten tin ("float" bath).
• the coating to be treated can be deposited on the "tin” side as well as on the "atmosphere” side of the substrate.
• the term "atmosphere” and “tin” faces means the faces of the substrate having respectively been in contact with the atmosphere prevailing in the float bath and in contact with the molten tin.
• the tin side contains a small surface amount of tin diffusing into the glass structure.
• the glass substrate may also be obtained by rolling between two rollers, a technique which makes it possible in particular to print patterns on the surface of the glass.
• the transparent conductive oxide (TCO) is preferably selected from indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide doped with antimony or fluorine (ATO and FTO), zinc oxide doped with aluminum (AZO) and / or gallium (GZO) and / or titanium, titanium oxide doped with niobium and / or tantalum , cadmium or zinc stannate.
• ITO indium tin oxide
• IZO indium zinc oxide
• ATO and FTO tin oxide doped with antimony or fluorine
• ZO zinc oxide doped with aluminum
• GZO gallium
• titanium titanium oxide doped with niobium and / or tantalum , cadmium or zinc stannate.
• a very preferred oxide is tin and indium oxide, frequently referred to as "ITO".
• the atomic percentage of Sn is preferably in a range from 5 to 70%, especially from 6 to 60%, advantageously from 8 to 12%.
• ITO is valued for its high electrical conductivity, allowing the use of small thicknesses to obtain a good emissivity or resistivity level. .
• the materials obtained thus have a high light transmission, which is appreciable in most of the targeted applications.
• the ITO can also be easily deposited by magnetron sputtering, with a good yield and a good deposition rate.
• the stack may comprise a single layer of a transparent conductive oxide.
• TCO can advantageously include several, including two or three. It has indeed been found that at the same total thickness of TCO the use of several layers of TCO, instead of a single layer thicker, allowed to further improve the homogeneity of treatment, especially for high processing speeds.
• the stack comprises several layers of TCO, the TCO is preferably the same for all these layers.
• this embodiment has proved preferable for large ITO thicknesses, for example physical thicknesses of at least 120 nm.
• the thick layers are indeed more difficult to process homogeneously at high speed, and it is then preferable to divide the TCO layer into several smaller individual layers, separated by at least one dielectric layer.
• the physical thickness of the thin layer of an electrically conductive transparent oxide is preferably at least 30 nm and at most 5000 nm, especially at least 50 nm and at most 2000 nm.
• these figures relate to the total physical thickness, that is to say the sum of the physical thicknesses of each of these layers. Thickness will most often be determined by the desired square resistance or emissivity, these two quantities being very closely correlated. In addition, it turns out that the aforementioned heterogeneity problems are all the more crucial as the thickness of TCO is high.
• emissivity For glazing low emissivity or anti ⁇ condensation, emissivity referred will generally be between 0.15 and 0.50. By “emissivity” is meant the normal emissivity at 283 K in the sense of the EN 12898 standard. For applications as electrodes, a square resistor of at most 15 ⁇ , in particular 10 ⁇ , will generally be used.
• the physical thickness is preferably at least 30 nm, in particular 50 or even 70 nm, and even 100 nm. It is generally at most 800 nm, in particular 500 nm.
• the atomic content of aluminum or gallium is preferably in a range from 1 to 5%.
• the physical thicknesses are preferably in a range from 60 to 1500 nm, in particular from 100 to 1000 nm.
• the physical thickness is preferably at least 300 nm, in particular 500 nm and at most 5000 nm, in particular 3000 nm.
• the oxidation state of the (or each) layer of TCO influences the homogeneity of the layer after the heat treatment. It has been found preferable in this respect to deposit relatively oxidized layers, and therefore whose light absorption is relatively low. In particular (but not only) in the case of ITO, it is preferable that the ratio between the light absorption and the physical thickness of the TCO layer is in a range from 0.1 to 0.9 ym -1 before heat treatment, especially 0.2 to 0.7 ym -1 .
• the light absorption of the TCO layer is determined by depositing only this layer on the glass, under the same deposition conditions, and calculated by subtracting the light absorption of the substrate from the measured light absorption. The latter is calculated by subtracting the value of 1 from light transmission and light reflection in the sense of the ISO 9050: 2003 standard.
• These relatively low absorptions, witnessing a rather high oxidation can be obtained during the deposition of the ITO layer by sputtering, by regulating the flow of oxygen in the plasma gas.
• the stack comprises several layers of TCO, it is necessary to take into account the total thickness in TCO (sum of the thicknesses of each layer) as well as the total absorption.
• the stack preferably comprises a single thin homogenization layer, in particular a single metal layer.
• the thin homogenization layer will generally oxidize at least partially, if not completely.
• the metal, the metal nitride or the metal carbide will thus at least partially become an oxide of the metal in question.
• the thin homogenization layer (in particular metal) is situated above the layer of an electrically conductive transparent oxide, or, where appropriate, above the layer of a transparent electrically conductive oxide. away from the substrate. It is even advantageously the last layer of the stack, so in direct contact with the atmosphere, in particular to facilitate its oxidation.
• the expression “above” must be understood in that the thin layer of homogenization (in particular metal) is further away from the substrate than the layer of a transparent electrically conductive oxide. This expression, however, does not prejudge any possible direct contact between the two layers, as explained in more detail later in the text.
• the thin homogenization layer in particular metal
• the thin homogenization layer is located in below the layer of a transparent oxide electro ⁇ conductor (thus between the substrate and the latter, possibly but not necessarily in contact with it), or if necessary below the layer of a transparent conductive oxide nearest of the substrate.
• the thin layer of homogenization in particular metal
• the thin layer of homogenization will generally oxidize at least partially, the oxygen being able to diffuse through the above-mentioned layers.
• This embodiment is particularly advantageous, especially in the case where the material is intended to be an electrode: the TCO layer is not surmounted by an insulating layer (the case of the metal being oxidized), the electrical contact is more easily preserved.
• the homogenization thin film is preferably a metal layer chosen from among the layers of a metal chosen from titanium, tin, zirconium, zinc, aluminum, cerium, or any of their alloys. , especially an alloy of tin and zinc or an alloy of titanium and zirconium.
• the metal is preferably not silver, copper, or an alloy of nickel and chromium.
• the stack preferably also comprises no silver layer.
• titanium has proved particularly advantageous because it allows high processing speeds.
• the thin homogenization layer is based on a metal nitride, especially chosen from titanium nitride, hafnium nitride, zirconium nitride, or any of their solid solutions, especially titanium nitride and zirconium.
• the thin homogenization layer is based on a metal carbide, in particular selected from titanium carbide, tungsten carbide or any of their solid solutions.
• the final product will therefore generally contain a layer of a metal or nitride or carbide at least partially oxidized, or even completely oxidized, for example TiO x , ZrO x , TiZrO x , ZnSnO x , TiO x N y , TiZrO x N y ...
• the physical thickness of the homogenization thin film is preferably at most 15 nm and even 10 nm or 8 nm.
• the physical thickness of the thin homogenization layer is preferably at least 1, or even 2 nm.
• the homogenizing thin film (in particular metal ) is preferably quite fine, so that after oxidation, the insulating layer obtained does not interfere with the electrical contact.
• the thickness of the thin homogenization layer (in particular metal) is in this case advantageously at most 5 nm.
• titanium its at least partial oxidation gives rise after heat treatment to titanium oxide.
• the titanium layer is placed above the TCO layer (or optionally above the TCO layer furthest from the substrate), preferably in the last layer of the TCO layer. stacking, and titanium oxide obtained is preferably at least partially crystallized in the anatase form.
• Metallic titanium thicknesses of at least 4 nm and at most 8 or 10 nm are preferred, so that after treatment, the titanium oxide thickness is sufficiently high to obtain sufficient photocatalytic activity. If the photocatalytic properties are not sought in the final product, titanium thicknesses of at least 2 nm and at most 5 nm are sufficient.
• the stack covers the entire surface of a face of the substrate, or both faces.
• the stack may comprise only one layer of TCO, but it can of course include two or more, for example three or four.
• a single thin layer of homogenization in particular metal will generally be necessary, located above the TCO layer furthest from the substrate.
• the stack (before heat treatment) may consist of a TCO layer and the thin homogenization layer (in particular metal), especially in a layer of ITO surmounted by a titanium layer.
• the stack may also include other layers than the latter.
• the stack may in particular comprise at least one dielectric layer between the substrate and the TCO layer and / or at least one layer dielectric between the TCO layer and the thin homogenization layer.
• the thin homogenization layer in particular metal
• the dielectric layers are preferably nitride, oxide or oxynitride layers of silicon or aluminum, in particular between oxynitride or silicon nitride.
• the stack comprises several layers of TCO, there is between two of these layers at least one, preferably only one, dielectric layer, in particular based or (mainly) silica.
• the physical thickness of this dielectric layer is preferably in a range from 5 to 100 nm, especially from 10 to 80 nm, or even from 20 to 60 nm.
• the stack preferably comprises no solvent-soluble layer, in particular an aqueous layer.
• the stack may in particular comprise, between the substrate and the TCO layer (where appropriate the TCO layer closest to the substrate), at least one layer, or a stack of layers, of neutralization.
• its refractive index is preferably between the refractive index of the substrate and the refractive index of the TCO layer.
• Such layers or stacks of layers make it possible to influence the reflection aspect of the material, in particular its reflection color. Bluish colors, characterized by b * negative colorimetric coordinates, are generally preferred.
• a stack of layers comprising two layers respectively at high and low index, for example a TiO x / SiO stack (N) x , SiN x / SiO x or ITO / SiO x is also usable, the high index layer being the layer closest to the substrate.
• the physical thickness of this or these layers is preferably in a range from 2 to 100 nm, in particular from 5 to 50 nm.
• the preferred neutralization layers or stacks are a silicon oxynitride neutralization layer or an SiN x / SiO x stack.
• the neutralization layer or stack is preferably in direct contact with the TCO layer (optionally the TCO layer closest to the substrate). Located between the latter and the substrate, it can also be used to block a possible migration of ions, such as alkaline ions. It is possible to arrange between the substrate and the neutralization layer or stack an adhesion layer. This layer, which advantageously has a refractive index close to that of the glass substrate, makes it possible to improve the quenching behavior by promoting the attachment of the neutralization layer.
• the adhesion layer is preferably silica or silicon nitride. Its physical thickness is preferably in a range from 20 to 200 nm, in particular from 30 to 150 nm.
• the stack may also comprise, between the TCO layer (where appropriate furthest removed from the substrate) and the thin homogenization layer, an oxygen barrier layer, preferably based (or essentially constituted) of a material chosen from nitrides or oxynitrides, in particular of silicon or aluminum, or from oxides of titanium, zirconium, zinc, mixed oxides of tin and zinc. Possible materials include silicon nitride, aluminum nitride, silicon oxynitride, aluminum oxynitride, oxide titanium, zirconium oxide, zinc oxide, zinc tin oxide, or any of their mixtures.
• the oxygen barrier layer is based on silicon nitride, in particular essentially consisting of silicon nitride.
• Silicon nitride is indeed a very effective barrier against oxygen and can be rapidly deposited by magnetron sputtering.
• the term "silicon nitride" does not prejudge the presence of other atoms than silicon and nitrogen, or the actual stoichiometry of the layer.
• the silicon nitride in fact preferably comprises a small amount of one or more atoms, typically aluminum or boron, added as dopants in the silicon targets used in order to increase their electronic conductivity and to facilitate thus magnetron sputtering deposition.
• the silicon nitride can be stoichiometric to nitrogen, substoichiometric to nitrogen, or super-stoichiometric to nitrogen.
• the oxygen barrier layer (especially when it is based on or consisting essentially of silicon nitride) preferably has a physical thickness of at least 3 nm, in particular 4 nm or 5 nm. Its physical thickness is advantageously at most 50 nm, in particular 40 or 30 nm.
• the oxygen barrier layer may be the only layer deposited between the TCO layer and the thin homogenization layer.
• another layer can be deposited between the oxygen barrier layer and the thin homogenization layer (in particular metal).
• It can in particular be a layer based on silicon oxide, advantageously a silica layer, in order to reduce the light reflection of the stack.
• the silica may be doped, or not be stoichiometric.
• the silica may be doped with aluminum or boron atoms in order to facilitate its deposition by sputtering methods.
• the physical thickness of the layer based on silicon oxide is preferably in a range from 20 to 100 nm, in particular from 30 nm to 90 nm, or even from 40 to 80 nm.
• the stack of thin layers before heat treatment can be constituted successively starting from the substrate of a TCO layer, an oxygen barrier layer and a homogenization layer. It may also consist, successively starting from the substrate, of a neutralization stack consisting of a high-index layer and then a low-index layer, a TCO layer, a barrier layer at the same time. oxygen and a homogenization layer.
• a neutralization stack consisting of a high-index layer and then a low-index layer, a TCO layer, a barrier layer with oxygen, a layer based on silicon oxide and a thin homogenization layer.
• the or each TCO is an ITO layer and the homogenizing thin layer a titanium or zirconium layer.
• the type of stacks described above can have various applications. Deposited in face 1 of glazing (the face turned towards the outside of the house), they confer a function of reduction of the condensation. Deposited in front 2 of a single glazing, in front 4 of a double glazing or a laminated glazing, or in front 6 of a triple glazing, they improve by their low emissivity the thermal insulation of buildings, motor vehicles or domestic ovens or refrigerators that are equipped.
• the stack may comprise only the TCO layer and the homogenization layer, the latter preferably being below the TCO layer.
• the heat treatment is preferably intended to improve the crystallization of the TCO layer, in particular by increasing the size of the crystals and / or the amount of crystalline phase.
• the heat treatment step does not involve melting, even partial, coating.
• the heat treatment makes it possible to bring sufficient energy to promote crystallization of the coating by a physical ⁇ chemical mechanism of crystal growth around nuclei already present in the coating, remaining in the solid phase.
• This treatment does not use a crystallization mechanism by cooling from a molten material, on the one hand because it would require temperatures extremely high, and secondly because it would be likely to change the thicknesses or the refractive index of the coating, and therefore its properties, for example by changing its optical appearance.
• the radiation is derived from at least one flash lamp.
• Such lamps are generally in the form of glass or quartz tubes sealed and filled with a rare gas, provided with electrodes at their ends. Under the effect of a short-term electrical pulse, obtained by discharging a capacitor, the gas ionizes and produces a particularly intense incoherent light.
• the emission spectrum generally comprises at least two emission lines; it is preferably a continuous spectrum having a maximum emission in the near ultraviolet.
• the lamp is preferably a xenon lamp. It can also be a lamp with argon, helium or krypton.
• the emission spectrum preferably comprises several lines, especially at wavelengths ranging from 160 to 1000 nm.
• the duration of the flash is preferably in a range from 0.05 to 20 milliseconds, in particular from 0.1 to 5 milliseconds.
• the repetition rate is preferably in a range from 0.1 to 5 Hz, in particular from 0.2 to 2 Hz.
• the radiation may be from several lamps arranged side by side, for example 5 to 20 lamps, or 8 to 15 lamps, so as to simultaneously treat a wider area. In this case, all lamps can emit flashes simultaneously.
• each lamp is preferably arranged transversely to the longer sides of the substrate.
• each lamp has a length preferably of at least 1 m in particular 2 m and even 3 m so as to be able to process large substrates.
• the capacitor is typically charged at a voltage of 500 V to 500 kV.
• the current density is preferably at least 4000 A / cm 2 .
• the total energy density emitted by the flash lamps, relative to the surface of the coating is preferably between 1 and 100 J / cm 2 , in particular between 1 and 30 J / cm 2 , or even between 5 and 20 J / cm. 2 .
• the radiation is laser radiation focused on said coating in the form of at least one laser line.
• the laser radiation is preferably generated by modules comprising one or more laser sources as well as optical shaping and redirection.
• the laser sources are typically laser diodes or fiber lasers, including fiber, diode or disk lasers.
• the laser diodes make it possible to economically achieve high power densities with respect to the electric power supply, for a small space requirement.
• the size of the fiber lasers is even smaller, and the linear power obtained can be even higher, but at a higher cost.
• Fiber lasers are understood to mean lasers in which the location of generation of the laser light is spatially offset from its place of delivery, the laser light being delivered by means of at least one optical fiber.
• the laser light is generated in a resonant cavity in which is located the emitter medium which is in the form of a disk, for example a thin disk (about 0.1 mm thick) in Yb: YAG.
• the light thus generated is coupled in at least one optical fiber directed towards the treatment site.
• Fiber or disk lasers are preferably pumped optically using laser diodes.
• the radiation from the laser sources is preferably continuous.
• the wavelength of the laser radiation is preferably in a range from 500 to 2000 nm, in particular from 700 to 1100 nm, or even from 800 to 1000 nm.
• Power laser diodes emitting at one or more wavelengths selected from 808 nm, 880 nm, 915 nm, 940 nm or 980 nm have proved particularly suitable.
• the wavelength is, for example, 1030 nm (emission wavelength for a Yb: YAG laser).
• the wavelength is typically 1070 nm.
• the shaping and redirecting optics preferably comprise lenses and mirrors, and are used as means for positioning, homogenization and focusing of the radiation.
• the purpose of the positioning means is, where appropriate, to arrange the radiation emitted by the laser sources along a line. They preferably include mirrors.
• the aim of the homogenization means is to superpose the spatial profiles of the laser sources in order to obtain a homogeneous linear power along the line.
• the homogenization means preferably comprise lenses enabling the incident beams to be separated into secondary beams and the recombination of said secondary beams into a homogeneous line.
• the means for focusing the radiation make it possible to focus the radiation on the coating to be treated, in the form of a line of desired length and width.
• the focusing means comprise of preferably a focusing mirror or a converging lens.
• the shaping optics are preferably grouped in the form of an optical head positioned at the output of the or each optical fiber.
• optical shaping of said optical heads preferably comprise lenses, mirrors and prisms and are used as means of transformation, homogenization and focusing of the radiation.
• the transformation means comprise mirrors and / or prisms and serve to transform the circular beam, obtained at the output of the optical fiber, into a non-circular, anisotropic, line-shaped beam.
• the transformation means increase the quality of the beam along one of its axes (fast axis, or axis of the width 1 of the laser line) and reduce the quality of the beam according to the other (slow axis, or axis of the length L of the laser line).
• the homogenization means superimpose the spatial profiles of the laser sources in order to obtain a homogeneous linear power along the line.
• the homogenization means preferably comprise lenses enabling the incident beams to be separated into secondary beams and the recombination of said secondary beams into a homogeneous line.
• the means for focusing the radiation make it possible to focus the radiation at the level of the work plane, that is to say in the plane of the coating to be treated, in the form of a line of desired length and width.
• the focusing means comprise of preferably a focusing mirror or a converging lens.
• the length of the line is advantageously equal to the width of the substrate. This length is typically at least 1 m, especially 2 m and even 3 m. It is also possible to use several lines, disjointed or not, but arranged so as to treat the entire width of the substrate. In this case, the length of each laser line is preferably at least 10 cm or 20 cm, especially in a range from 30 to 100 cm, especially from 30 to 75 cm, or even from 30 to 60 cm.
• the term "length" of the line is the largest dimension of the line, measured on the surface of the coating in the first direction, and "width" the dimension in the second direction.
• the width w of the line corresponds to the distance (in this second direction) between the beam axis (where the intensity of the radiation is maximum) and the point where the Radiation intensity is equal to 1 / e 2 times the maximum intensity.
• the longitudinal axis of the laser line is named x, we can define a distribution of widths along this axis, named w (x).
• the average width of the or each laser line is preferably at least 35 microns, especially in a range from 40 to 100 microns or 40 to 70 microns.
• the difference between the largest width and the smallest width is preferably not more than 10% of the value of the average width. This figure is preferably at most 5% and even 3%.
• the formatting and redirection optics in particular the positioning means, can be adjusted manually or by means of actuators making it possible to adjust their positioning remotely.
• actuators typically motors or piezoelectric shims
• These actuators can be manually controlled and / or adjusted automatically.
• the actuators will preferably be connected to detectors as well as to a feedback loop.
• At least a portion of the laser modules, or all of them, is preferably arranged in a sealed box, advantageously cooled, in particular ventilated, in order to ensure their thermal stability.
• Laser modules are preferably mounted on a rigid structure, called "bridge", based on metal elements, typically aluminum.
• the structure preferably does not include a marble slab.
• the bridge is preferably positioned parallel to the conveying means so that the focal plane of the or each laser line remains parallel to the surface of the substrate to be treated.
• the bridge comprises at least four feet, the height of which can be individually adjusted to ensure parallel positioning under all circumstances. The adjustment can be provided by motors located at each foot, either manually or automatically, in relation to a distance sensor.
• the height of the bridge can be adapted (manually or automatically) to take into account the thickness of the substrate to be treated, and thus ensure that the plane of the substrate coincides with the focal plane of the or each laser line.
• the linear power of the laser line is preferably at least 300 W / cm, advantageously 350 or 400 W / cm, in particular 450 W / cm, or even 500 W / cm and even 550 W / cm. It is even advantageously at least 600 W / cm, especially 800 W / cm or 1000 W / cm.
• the linear power is measured where the or each laser line is focused on the coating. It can be measured by placing a power detector along the line, for example a power-meter calorimetric, such as in particular the power meter Beam Finder S / N 2000716 Cohérent Inc.
• the power is advantageously distributed in a manner homogeneous over the entire length of the or each line. Preferably, the difference between the highest power and the lowest power is less than 10% of the average power.
• the energy density supplied to the coating is preferably at least 20 J / cm 2 , or even 30 J / cm 2 .
• the high power densities and densities make it possible to heat the coating very quickly, without heating the substrate significantly.
• the maximum temperature experienced by each point of the coating during the heat treatment is preferably at least 300 ° C, especially 350 ° C, or even 400 ° C, and even 500 ° C or 600 ° C.
• the maximum temperature is normally experienced when the point of the coating under consideration passes under the radiation device, for example under the laser line or under the flash lamp.
• the points of the surface of the coating located under the radiation device for example under the laser line
• the immediate vicinity for example less than a millimeter
• the coating temperature is normally at most 50 ° C, and even 40 ° C or 30 ° C.
• Each point of the coating undergoes the heat treatment (or is brought to the maximum temperature) during a period advantageously in a range from 0.05 to 10 ms, in particular from 0.1 to 5 ms, or from 0.1 to 2 ms. ms.
• this time is set by both the width of the laser line and the relative speed of movement between the substrate and the laser line.
• this duration corresponds to the duration of the flash.
• the laser radiation is partly reflected by the coating to be treated and partly transmitted through the substrate.
• This will typically metal housings cooled by fluid circulation, including water.
• the propagation axis of the or each laser line forms an angle that is preferentially non-zero with the normal to the substrate, typically an angle of between 5 and 20 °.
• At least a portion of the (main) laser radiation transmitted through the substrate and / or reflected by the coating is redirected towards said substrate to form at least secondary laser radiation , which preferably impacts the substrate at the same place as the main laser radiation, with advantageously the same depth of focus and the same profile.
• the formation of the or each secondary laser radiation advantageously implements an optical assembly comprising only optical elements selected from mirrors, prisms and lenses, in particular an optical assembly consisting of two mirrors and a lens, or a prism and a lens.
• the conveyor system controls and controls the speed of travel.
• the conveying means preferably comprises a rigid frame and a plurality of rollers.
• the pitch of the rollers is advantageously in a range from 50 to 300 mm.
• the rollers preferably comprise metal rings, typically made of steel, covered with plastic bandages.
• the rollers are preferably mounted on low-clearance bearings, typically three rolls per step. In order to ensure perfect flatness of the conveying plane, the positioning of each of the rollers is advantageously adjustable.
• the rollers are preferably driven by means of pinions or chains, preferably tangential chains, driven by at least one motor.
• the speed of the relative displacement movement between the substrate and the or each radiation source is advantageously at least 2 m / min or 4 m / min, in particular 5 m / min and even 6 m / min or 7 m / min, or 8 m / min and even 9 m / min or 10 m / min.
• the speed of the relative displacement movement between the substrate and the radiation source is at least 12 m / min or 15 m / min, in particular 20 m / min and even 25 or 30 m / min.
• the speed of the relative displacement movement between the substrate and the or each radiation source varies during the treatment of at most 10 % in relative, in particular 2% and even 1% compared to its nominal value.
• the or each radiation source (in particular laser line or flash lamp) is fixed, and the substrate is in motion, so that the relative speed of movement will correspond to the running speed of the substrate.
• the heat treatment device may be integrated in a layer deposition line, for example a magnetic field assisted sputtering deposition line (magnetron process), or a chemical vapor deposition line (CVD), in particular assisted by plasma (PECVD), under vacuum or at atmospheric pressure (APPECVD).
• the line generally includes substrate handling devices, a deposition facility, optical control devices, stacking devices.
• the substrates scroll, for example on conveyor rollers, successively in front of each device or each installation.
• the heat treatment device is preferably located immediately after the storage facility of the coating, for example at the exit of the deposit facility.
• the coated substrate can thus be treated in line after deposition of the coating, at the exit of the deposition installation and before the optical control devices, or after the optical control devices and before the stacking devices of the substrates.
• the heat treatment device can also be integrated into the deposit facility.
• the laser or the flash lamp can be introduced into one of the chambers of a sputtering deposition installation, in particular in a chamber where the atmosphere is rarefied, in particular under a pressure of between 10 ⁇ 6 mbar and 10 ⁇ 2 mbar.
• the heat treatment device may also be disposed outside the deposition installation, but so as to treat a substrate located inside said installation. For this purpose, it is sufficient to provide a transparent window at the wavelength of the radiation used, through which the radiation would be used to treat the layer. It is thus possible to treat a layer (for example a layer of silver) before the subsequent deposit of another layer in the same installation.
• Processes recovery can however be of interest in cases where the implementation of the heat treatment according to the invention is made in a different location from where the deposit is made, for example in a place where is performed the transformation of glass .
• the heat treatment device can therefore be integrated into other lines than the layer deposition line. It can for example be integrated into a production line of multiple glazing (double or triple glazing in particular), to a laminated glass manufacturing line, or to a curved and / or tempered glass production line. Laminated or curved or tempered glass can be used as building or automotive glazing.
• the heat treatment according to the invention is preferably carried out before the production of multiple or laminated glazing.
• the heat treatment can, however, be implemented after completion of double glazing or laminated glazing.
• the heat treatment device is preferably disposed in a closed enclosure for securing persons by avoiding contact with the radiation and to avoid any pollution, in particular of the substrate, the optics or the treatment zone.
• the stack is preferably deposited by cathode sputtering, in particular assisted by magnetic field (magnetron sputtering).
• the deposition of the stack on the substrate can be carried out by other methods, such as the chemical vapor deposition (CVD) method, in particular assisted by plasma (PECVD), the vacuum evaporation process, or else a sol-gel process.
• CVD chemical vapor deposition
• PECVD assisted by plasma
• sol-gel process a sol-gel process
• the heat treatment of the stack is preferably under air and / or at atmospheric pressure.
• the invention also relates to a material that can be obtained according to the method of the invention.
• the invention also relates to glazing, single, multiple or laminated, a mirror, a glass wall covering, an oven door, a fireplace insert, comprising at least one material according to the invention.
• the coating can be positioned on face 1 of the glazing to impart to it anti ⁇ condensation properties, limiting or eliminating the occurrence of fog or frost.
• the coating can be positioned in front of a double glazing or in front of a triple glazing unit in order to improve its thermal insulation performance, especially in combination with other low-emission coatings on face 2 or 3.
• the coating can also be positioned in front 4 of a laminated glazing, used for example as a windshield of a motor vehicle.
• the glazing may in particular be fireproof.
• the invention also relates to a photovoltaic cell, a display screen or active glazing comprising at least one material according to the invention, the coating being used as an electrode.
• the display screens are for example LCD (Liquid Crystal Display), PDP (plasma display panel), OLED (Organic Light Emitting Diodes) or FED (Field Emission Display).
• Active glazing is in particular glazing with electro-controllable transparency, in particular of the electrochromic or liquid crystal type.
• Examples 1, 4 and 5 are examples according to the invention since the stack comprises a metal homogenization layer, in this case titanium.
• Example 5 comprises two layers of ITO separated by an SiO x layer, with a physical thickness of 20 or 40 nm depending on the tests. The total thickness of ITO is the same in both cases (120 nm).
• Examples 2 and 3 are comparative examples, the titanium layer being replaced respectively by a titanium oxide layer and a carbon layer.
• indices "x" indicate that the exact stoichiometry of the layers is not known.
• the names SiN x or SiO x do not prejudge the presence of dopants either. In practice, these layers also contain a small amount of aluminum atoms because they have been obtained by sputtering aluminum-doped silicon targets in order to increase their electronic conductivity.
• Example 1 the ITO layer was deposited so that its light absorption was 4.4%. The ratio of light absorption to thickness is therefore 0.42 ⁇ m -1 .
• the substrates thus coated then passed under a fixed device emitting laser radiation in the form of a line focused on the stack.
• the average width of the laser line was 45 ⁇ m, the linear power between 250 and 500 W / cm according to the tests.
• the laser radiation superimposed two wavelengths: 915 and 980 nm. Different running speeds were tested, between 3 and 20 m / min.
• Example 3 In the case of Example 3, the drop in square strength is much lower and the carbon is not completely eliminated, so that the stack obtained has a low transmission.
• Example 4 the greater thickness of ITO results in a slight degradation of the homogeneity of treatment when the latter is achieved. at high speed, for example 20 m / min. In particular, the square resistance gain was found to be more dependent on the processing speed than for Example 1. Splitting the thick ITO layer (Example 5) in two makes it possible to return to perfect stability.
• Figure 1 illustrates the spatial variation of the light reflection on the samples obtained from Examples 1 and 2 for a linear power of 490 W / cm. From one edge of the sample, light reflection was measured every centimeter over a length of 30 cm. Figure 1 shows in abscissa the position on the sample, denoted x, and ordinate the absolute variation of light reflection compared to the previous measurement, denoted ARL. In the case of Example 2, the light reflection varies rather strongly depending on the position on the sample. On the other hand, the use of a homogenization layer according to the invention makes it possible, in the case of example 1, to considerably improve the homogeneity of the final product, the spatial variation of light reflection being close to zero and always less than 0.1%.
• the substrates coated with these stacks ran under a fixed xenon flash lamp, emitting incoherent radiation in a wavelength range of 250-2500 nm and concentrated on the stacks in the form of 6.5 cm wide strips. and 20 cm long. Energy densities of 10 to 30 J / cm 2 (corresponding to capacitor charging voltages between 2500 and 4500 V) were used. The duration of the flashes (pulses) was 3 ms, with a repetition rate of 0.5 Hz. The running speeds tested were between 0.1 and 1 m / min.
• the optical appearance of the stack is little dependent on the energy density, so the operating conditions of the lamp.
• the value of the colorimetric parameter b * in reflection varies from -4 to -4.5 depending on the charge voltage of the capacitor.
• the appearance of the layer varies greatly depending on these operating conditions of the lamp.
• the value of b *, which is -1 for a charging voltage of 3400 V goes to -4 for a charging voltage of 4200 V. Treatment heterogeneities are therefore likely to create very visible heterogeneities at the level of the stack.

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