EP3052915A1 - Puce mems, élément de mesure et capteur de pression permettant de mesurer une pression - Google Patents

Puce mems, élément de mesure et capteur de pression permettant de mesurer une pression

Info

Publication number
EP3052915A1
EP3052915A1 EP14789767.2A EP14789767A EP3052915A1 EP 3052915 A1 EP3052915 A1 EP 3052915A1 EP 14789767 A EP14789767 A EP 14789767A EP 3052915 A1 EP3052915 A1 EP 3052915A1
Authority
EP
European Patent Office
Prior art keywords
measuring
mems chip
mems
cavity
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP14789767.2A
Other languages
German (de)
English (en)
Inventor
Stéphane KÜHNE
Claudio Cavalloni
Andreas Goehlich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kistler Holding AG
Original Assignee
Kistler Holding AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kistler Holding AG filed Critical Kistler Holding AG
Publication of EP3052915A1 publication Critical patent/EP3052915A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/147—Details about the mounting of the sensor to support or covering means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
    • G01L19/0627—Protection against aggressive medium in general
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
    • G01L9/0005—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using variations in capacitance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G01L9/0045—Diaphragm associated with a buried cavity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G01L9/005—Non square semiconductive diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm

Definitions

  • the present invention relates to a micro-electro-mechanical system chip (EMS chip) for measuring a pressure in a pressure chamber, comprising a MEMS substrate and a carrier substrate, which are bonded together flat along its longitudinal axis A, wherein the MEMS chip Having measuring range with electromechanical measuring means and connected via lines with the measuring range Kunststofftechniks- area with contacts.
  • the MEMS chip is rod-shaped and the measuring region and the contacting region are spaced apart in the direction of the longitudinal axis by a lead-through region.
  • the invention also relates to a measuring element and a pressure sensor comprising such a MEMS chip.
  • MEMS chips Micro-Electro-Mechanical Systems combine electron! ke learning duck and micromechanical structures on a semiconductor chip and process electrical and mechanical ⁇ infor mation. They are therefore used for sensors, actuators and others.
  • MEMS chips of the type described above are exposed with their measuring range to the pressure chamber, wherein corresponding 'measuring signals which are recorded in the pressure chamber can be removed from the contacts.
  • Such MEMS chips are suitable for the pressure-tight arrangement in an execution tion, which is formed by a full enveloping the surface of the feedthrough region 11 normal to the longitudinal axis ⁇ .
  • MEMS chips have a cavity in the carrier substrate in the measuring region which is closed by a silicon-on-insulator (SOI) wafer, a measuring bridge within In addition, the SOI wafer is designed with a reduced thickness in the entire front area of the MEMS chip so that it acts as a membrane.
  • SOI silicon-on-insulator
  • the object of the present invention is to describe a MEMS chip, a measuring element and a pressure sensor for pressure measurements at a high ambient temperature, in particular above 200 ° C., whereby the manufacture of such a MEMS chip is simplified. should be at the same time improving the reproduction of given sensitivities.
  • a MEMS chip described at the outset whose electromechanical measuring means are designed such that the MEMS substrate has a cavity forming a blind hole whose edge forms a membrane in the MEMS substrate and a measuring bridge of piezoresistive elements on the side facing away from the cavity
  • This membrane is arranged, wherein the MEMS substrate is bonded to the side facing the cavity of the carrier substrate on the carrier substrate, so that the carrier substrate forms a bottom wall of the cavity formed below the membrane.
  • the rigidity of the membrane can thus be precisely adjusted.
  • the thickness of the membrane is always identical, since the blind hole extends to an oxide layer in the MEMS substrate, which acts as an etch stop.
  • Another advantage is that no cavity has to be formed in the carrier substrate.
  • the lines can be arranged on the surface of the MEMS substrate, which has proven to be simpler than their guidance between the two layers.
  • Such MEMS chips are easy to produce as wafers and saw into the individual parts, resulting in chips with rectangular cross-sections that are easy to handle.
  • Advantageous embodiments are disclosed in the dependent claims.
  • a measuring element and from it a pressure sensor can be formed.
  • the result is a compact design of the MEMS chip and a measuring element formed therefrom, wherein a diaphragm, a cavity concluding used as electromechanical measuring means.
  • the mechanical stress induced by the deflection of the membrane is used.
  • the membrane can bend for this purpose because it is adjacent to the cavity and does not rest.
  • the stiffness of the membrane is defined by the open area of the cavity adjacent to the membrane.
  • the media separation in the installed measuring element takes place in the region of a retaining ring, which is part of the measuring element.
  • the measuring element according to the invention can be used in particular for high-temperature pressure sensors in the automotive industry, in aviation, for gas turbines, technical processes in gas and oil production, and in geothermal energy.
  • 2a shows a longitudinal section of an inventive MEMS chip with evacuated cavity, suitable for absolute pressure measurement
  • 2b shows a longitudinal section of another inventive MEMS chip with channel, suitable for relative pressure measurement
  • FIG. 2c shows a longitudinal section of a further MEMS chip according to the invention with channel and further closed cavity
  • 3a shows a plan view of an inventive measuring element with MEMS chip and retaining ring
  • 3b is a front view of the measuring element according to FIG.
  • Fig. 3c is a partial section through an inventive
  • a pressure sensor wherein a housing surrounds the measuring element according to the invention and a connecting cable is laid from the contacting area out of the housing;
  • FIG. 4a shows a longitudinal section of an inventive measuring element with a cavity and fixed clamping contact.
  • FIG. 4b shows a longitudinal section of a measuring element according to the invention with a channel adjoining the cavity and with a fixed clamping contact. Ways to carry out the invention
  • a part of the measuring element according to the invention presented here for measuring a pressure at high temperatures, preferably greater than 200 ° C., is a MEMS chip 3 as shown in FIG. 1, which is substantially rod-shaped.
  • the MEMS chip 3 comprises in. Area of a first end of a measuring area 4 and in the region of a second end a contacting region 6.
  • electromechanical measuring means are arranged in the measuring region 4 on a longitudinal surface of the MEMS chip 3 arranged.
  • these electromechanical measuring means comprise a membrane 7, which is doped with a plurality of piezoresistive elements 2, which are formed into a measuring bridge 19. From the measuring bridge 19, a plurality of lines 8 are arranged extending from the measuring region 4 to the contacting region 6 along the longitudinal surface of the MEMS chip 3.
  • the lines 8 open into a plurality of contacts 16 in the contacting region 6.
  • the lines 8 open into a plurality of contacts 16 in the contacting region 6.
  • the contacting region 6 is outside the pressure chamber D, in which the pressure is to be determined.
  • FIGS. In the sectional views along the longitudinal axis A of the MEMS chip 3, different embodiments of the MEMS chip 3 are shown in FIGS. All MEMS chips 3 are each formed by a MEMS substrate 30 and a carrier substrate 31.
  • the MEMS chip 3 is an SOI-Si chip which is made of the MEMS substrate 30, preferably as an SOI substrate 30, and is formed on the carrier substrate 31 in the form of an Si carrier substrate 31.
  • the MEMS substrate 30 and the carrier substrate 31 are arranged in a flat manner along their longitudinal axis A bonded together.
  • All MEMS chips 3 have a cavity 5 arranged in the measuring region 4, which is recessed from the MEMS substrate 30 or etched out of it.
  • Piezoresistive elements 2 are produced by etching, doping and / or coating of the substrates 30, 31.
  • the membrane 7 forms the top surface of the cavity 5 and thus closes off the cavity 5 in a pressure-tight manner from the side facing away from the substrate 31.
  • the membrane 7 is arranged to extend in a plane parallel to the longitudinal axis A of the MEMS chip 3.
  • the bottom wall 50 of the cavity 5 is formed by the carrier substrate 31. Since both substrates 30, 31 are connected to each other in a pressure-tight, non-detachable manner, the cavity 5 is closed.
  • the wall thickness of the bottom wall 50 is greater by a multiple than the thickness of the membrane 7.
  • the membrane 7 with the measuring bridge 19 is preferably designed as a thin-film SOI membrane with piezoresistors 2. This measuring bridge 19 is arranged outside the cavity 5, facing away from the substrate 31 on the outer surface of the membrane 7.
  • a vacuum is formed in the closed cavity 5.
  • the production space is evacuated for this purpose and means are provided for keeping the vacuum in the cavity long-term.
  • the cavity 5 is not evacuated, but provided with a channel 21 extending in the direction of the contacting region 6, which is opened through an opening 210 to atmospheric conditions.
  • the relative pressure or differential pressure can be measured.
  • the channel 21 terminates in a further closed cavity 12.
  • This is preferably arranged in the contacting region 6 and, contrary to the illustration, can be made much larger than the first cavity 5. Since the entire vacuumized The space of the cavity 5 is much larger in this arrangement, the vacuum is more stable, even if some gases diffuse into the cavity 5.
  • a getter 13 can be arranged in the further cavity 12 in order to obtain the vacuum as long as possible.
  • the channel 21 can also be arranged in the MEMS substrate 30, contrary to the illustration in FIG. 2 c.
  • the further cavity 12 and the channel 21 can be arranged independently of one another optionally in the MEMS substrate 30 or in the carrier substrate 30.
  • a gap forms, which acts as a channel 21, and optionally ends in a second cavity 12 or as an opening 210 in the environment.
  • the membrane 7 is always formed from the MEMS substrate 30, whereby an open cavity 5, a blind hole in the MEMS substrate 30 is formed.
  • the blind hole in the MEMS substrate 30 is provided on the side of the diaphragm 7 facing away from the carrier substrate 31 and points away from the carrier substrate 31.
  • the blind hole forming cavity 5 is steep-walled, wherein the walls are substantially perpendicular to the membrane 7. This has the advantage that the size of the cavity 5 is more accurate can be reproduced and the cavity 5 claimed less space overall.
  • the membrane 7 is limited to the cavity 5 through an oxide layer.
  • the oxide layer serves as an etch stop, whereby the membrane 7 can always be made in the same thickness.
  • a further silicon layer is generally applied adjacent to the oxide layer and extends over the entire MEMS substrate 30.
  • the piezoresistive elements 2 are designed as resistors in the membrane 7, in particular by doping in silicon. In order to insulate the resistors 2 from the surrounding silicon, this silicon can either be etched away or the resistors can be isolated from the surrounding silicon by a border of trench-shaped oxide layers.
  • the electromechanical measuring means are always designed such that the MEMS substrate 30 has a cavity 5, the bottom of which forms a membrane 7 in the MEMS substrate 30, the measuring bridge 19 consisting of piezoresistive elements 2 the cavity 5 side facing away from this membrane 7 is arranged. As soon as a pressure on the diaphragm 7 occurs, it bends. The resistors 2 can detect this bending by changing the mechanical stress and give corresponding signals via the lines 8 to the contacts 16.
  • FIG. 3 a shows a measuring element 10 according to the invention, comprising a MEMS chip 3 with the measuring area 4 and the contacting area 6, which here in one embodiment Retaining ring 1, which is placed between the two areas 4,6 arranged and permanently attached pressure-tight.
  • the retaining ring 1 is executed closed and forms part of the implementation of the measuring element 10.
  • the MEMS chip 3 is guided in the direction of its longitudinal axis A through the retaining ring 1, so that a part of the MEMS chip 3 is within the retaining ring 1 or from this is wrapped.
  • the measuring area 4 and the contacting area 6 project out of the retaining ring 1 in different directions, and the retaining ring 1 approximately surrounds the central area of the MEMS chip 3.
  • the retaining ring 1 can be seen, which completely surrounds the MEMS chip 3.
  • FIG. 3c A complete pressure sensor S according to the invention is shown in FIG. 3c.
  • This comprises a measuring element 10 comprising the MEMS chip 3 and the retaining ring 1, a enclosing housing 9 and a wiring 14.
  • the housing 9 extends parallel to the longitudinal axis A of the MEMS chip 3 and serves to protect the measuring element 10. Between the measuring Area 4 and the contacting region 6 holds the retaining ring 1, the MEMS chip 3, which it encloses in its circumference.
  • the measuring element 10 is permanently connected to the housing 9, in particular the measuring element 10 is welded to the retaining ring 1 with the housing 9 pressure-tight.
  • the retaining ring 1 and the housing 9 are preferably made of steel.
  • the housing 9 has, in an end face, at least one housing opening 90, through which the measuring element 10 in the measuring area 4 can be brought into contact with the medium in a pressure space D.
  • a plurality of housing openings 90 is recessed from the end wall of the housing 9 or the end wall is formed as a grid or sieve.
  • sealing means are provided, preferably configured in the form of a front seal or behind the thread in the form of a shoulder seal.
  • a wiring 14 is wired to the contacts 16 at the contacting area 6 of the measuring element 10, wherein the wiring 14 forms part of the pressure sensor S. Due to the design of the pressure sensor S with the wiring 14, the pressure sensor S directly, for example, in an exhaust system of an internal combustion engine, installed and a readout electronics just outside the pressure chamber D and the measuring area 4 are connected sufficiently trouble-free. Depending on the customer's request, a pressure sensor S with encapsulated measuring element 10 and suitable connecting means on the housing 9, for example in the form of an external thread 91, can be made completely wired and ready for connection.
  • FIGS. 4a and 4b are used. They each show a longitudinal section through a measuring element 10 with MEMS chip 3 and molded cavity 5, respectively. a longitudinal section through a measuring element 10 with MEMS chip 3, molded cavity 5 and adjacent channel 21. Otherwise, the measuring elements 10 are of identical design. - -
  • the MEMS chip 3 is cast in a retaining ring 1 with a potting compound 20 and is therefore mechanically stable.
  • the potting compound 20 surrounds the MEMS chip 3 along the outer circumference in a bushing region 11 completely and sealingly.
  • the potting compound 20 permanently connects the MEMS chip 3 in the feedthrough region 11 to the retaining ring 1, the retaining ring 1 and the potting compound 20 forming a partial encapsulation of the MEMS chip 3.
  • the lead-through region 11 and thus the casting compound 20 are arranged between the measuring region 4 and the contacting region 6 along the longitudinal axis A.
  • the measuring area 4 is in use in a pressure chamber D, which is to be measured, while the contacting area 6 is in use in an environment with ümbuchstik.
  • the pressure chamber D is separated by a wall, shown in Figures 4 by a gray bar from the environment with ambient pressure.
  • the retaining ring 1 and the potting compound 20 thus form a pressure-tight passage, wherein instead of attached disadvantageous bonding wires here, the entire body of the MEMS chip 3 is performed by the retaining ring 1 and secured with the potting compound 20.
  • the retaining ring 1 is used here for easy handling of the measuring element 10, since the measuring element 10 can be inserted simply by ' contact with the retaining ring 1 in a pressure chamber D, without being acted upon the measuring area 4.
  • the measuring element 10 can be attached directly pressure-tight to the wall of the pressure chamber D. If a housing 9, as shown in Figure 3c, attached to the retaining ring 1, an indirect attachment of the retaining ring 1 on the wall of the pressure chamber D via the housing 9 is possible.
  • the retaining ring 1 is executed in the figures 4 with a thickening 100, which serves as a stop in the attachment of the housing 9 on the retaining ring 1 or the fixation of the retaining ring 1 directly to the wall of the pressure chamber D.
  • the measuring element 10 can be easily and safely gripped on the retaining ring 1 and introduced into a hole in the wall of the pressure chamber D and fixed there to the retaining ring 1.
  • the retaining ring 1 is designed to be only slightly longer in the direction of the longitudinal axis A than the bushing area 11 in which the potting compound 20 is located. In further embodiments, the retaining ring 1 protrude beyond the lead-through region 11 significantly extended in the direction of the measuring region 4, or project beyond the entire measuring region 4, whereby the MEMS chip 3 is additionally protected.
  • potting compound 20 an electrically insulating or conductive mass with the smallest possible coefficient of thermal expansion, in particular glass, ceramic or an adhesive can be used.
  • a passivation layer 32 is arranged here, in particular an atomic layer deposition passivation layer 32 ALD passivation layer 32 should be applied to sensitive surfaces that are exposed to the aggressive medium depending on the intended use.
  • clamping contact 17 can be contacted with the contacts 16 simply and easily on the atmosphere side of the MEMS chip 3.
  • measuring element 10 according to FIG. 4 a can be used to measure the absolute pressure
  • measuring element 10 of the same design as in FIG. 4 b can be used for differential pressure measurement, except for the channel 21.
  • a MEMS chip 3 comprising a semiconductor material composite comprising a MEMS substrate 30 and a carrier substrate 31 is first produced.
  • the contacts 16, the lines 8, the measuring bridge 19, the piezoresistive elements 2, as well as the membrane 7 are already to be arranged in the substrate preparation and to fix the semiconductor substrates 30, 31 to each other.
  • the MEMS chip 3 is guided by the retaining ring 1 in the direction of the longitudinal axis A and the retaining ring 1 by means of potting compound 20 on the surface of the MEMS chip 3 fully pressure-tight fixed, the gap between the surface of the MEMS chip 3 and inner surface of the retaining ring 1 is completely filled, resulting in a pressure-tight attachment.
  • the potting compound 20 is arranged in the leadthrough region 11 between the measuring region 4 and the contact area 6.
  • the outer edge surfaces of the MEMS chip 3 are shown executed broken. Such an optional embodiment of the outer edge surfaces of the MEMS chip 3 is a possibility to reduce the edge stresses, especially in the region of the retaining ring 1.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)

Abstract

L'invention concerne une puce de microsystème électromécanique (puce MEMS) servant à mesurer une pression dans une chambre de pression (D), comprenant un substrat MEMS (30) et un substrat de support (31) qui sont liés à plat l'un sur l'autre. La puce MEMS (3) est réalisée en forme de barre et comporte une zone effectuant les mesures (4) munie de moyens de mesure électromécaniques, suivie d'une zone de passage (11), suivie d'une zone de mise en contact (6) reliée à la zone effectuant les mesures (4) par des lignes (8) et comprenant des contacts (16). La puce MEMS (3) est adaptée dans la zone de passage (11) pour être agencée de manière étanche à la pression dans un passage. Selon l'invention, les moyens de mesure électromécaniques sont configurés de telle manière que le substrat MEMS (30) comporte une cavité (5) formant un trou borgne dont le bord forme une membrane (7) dans le substrat MEMS (30), et un pont de mesure (19) constitué d'éléments piézorésistifs (2) est agencé sur le côté de cette membrane (7) opposé à la cavité (5). Le substrat MEMS (30) est lié sur le substrat de support (31) par le côté de la cavité (5) faisant face au substrat de support (31), de sorte que le substrat de support (31) forme une paroi de fond (50) de la cavité (5) formée sous la membrane (7).
EP14789767.2A 2013-10-03 2014-10-02 Puce mems, élément de mesure et capteur de pression permettant de mesurer une pression Withdrawn EP3052915A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH01699/13A CH708708A1 (de) 2013-10-03 2013-10-03 Messelement zum Messen eines Drucks und Druckmesssensor.
PCT/CH2014/000142 WO2015048916A1 (fr) 2013-10-03 2014-10-02 Puce mems, élément de mesure et capteur de pression permettant de mesurer une pression

Publications (1)

Publication Number Publication Date
EP3052915A1 true EP3052915A1 (fr) 2016-08-10

Family

ID=49322111

Family Applications (1)

Application Number Title Priority Date Filing Date
EP14789767.2A Withdrawn EP3052915A1 (fr) 2013-10-03 2014-10-02 Puce mems, élément de mesure et capteur de pression permettant de mesurer une pression

Country Status (10)

Country Link
US (1) US9927316B2 (fr)
EP (1) EP3052915A1 (fr)
JP (2) JP2016540192A (fr)
KR (1) KR20160065109A (fr)
CN (1) CN105593657A (fr)
BR (1) BR112016006523A2 (fr)
CA (1) CA2924166A1 (fr)
CH (1) CH708708A1 (fr)
MX (1) MX360473B (fr)
WO (1) WO2015048916A1 (fr)

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IT201600083804A1 (it) * 2016-08-09 2018-02-09 St Microelectronics Srl Procedimento di fabbricazione di un dispositivo a semiconduttore includente una struttura microelettromeccanica ed un associato circuito elettronico integrato e relativo dispositivo a semiconduttore
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EP3654005B1 (fr) * 2018-11-15 2022-05-11 TE Connectivity Solutions GmbH Capteur de pression différentielle
JP7368621B2 (ja) 2019-11-06 2023-10-24 エスエイチエル・メディカル・アーゲー スプレーノズルチップ
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DE102020206769B3 (de) * 2020-05-29 2021-06-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Mikroelektronische anordnung und verfahren zur herstellung derselben
CN112254865A (zh) * 2020-09-15 2021-01-22 南京高华科技股份有限公司 电阻式微机械气压传感器及其制备方法
CN112284608B (zh) * 2020-09-15 2022-08-02 南京高华科技股份有限公司 电容式微机械气压传感器及其制备方法
CN113155348B (zh) * 2021-02-26 2023-09-12 西安微电子技术研究所 一种压阻式压力传感器信号处理模块及其集成方法
CN114136528B (zh) * 2021-12-07 2024-03-01 华东光电集成器件研究所 一种soi压力敏感芯片

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CA2924166A1 (fr) 2015-04-09
CH708708A1 (de) 2015-04-15
JP2016540192A (ja) 2016-12-22
JP2019174478A (ja) 2019-10-10
JP6655211B2 (ja) 2020-02-26
MX360473B (es) 2018-11-05
US20160231189A1 (en) 2016-08-11
KR20160065109A (ko) 2016-06-08
CN105593657A (zh) 2016-05-18
WO2015048916A1 (fr) 2015-04-09
MX2016004234A (es) 2016-10-07
BR112016006523A2 (pt) 2017-08-01
US9927316B2 (en) 2018-03-27

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