EP2907136B1 - Drift acceleration in resistance variable memory - Google Patents

Drift acceleration in resistance variable memory Download PDF

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Publication number
EP2907136B1
EP2907136B1 EP13845261.0A EP13845261A EP2907136B1 EP 2907136 B1 EP2907136 B1 EP 2907136B1 EP 13845261 A EP13845261 A EP 13845261A EP 2907136 B1 EP2907136 B1 EP 2907136B1
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Prior art keywords
read signal
phase change
memory cell
change memory
applying
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German (de)
English (en)
French (fr)
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EP2907136A1 (en
EP2907136A4 (en
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Alessandro Calderoni
Massimo Ferro
Paolo Fantini
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Micron Technology Inc
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Micron Technology Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0035—Evaluating degradation, retention or wearout, e.g. by counting writing cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0097—Erasing, e.g. resetting, circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/006—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation at wafer scale level, i.e. wafer scale integration [WSI]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50008—Marginal testing, e.g. race, voltage or current testing of impedance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0052—Read process characterized by the shape, e.g. form, length, amplitude of the read pulse
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0057—Read done in two steps, e.g. wherein the cell is read twice and one of the two read values serving as a reference value

Definitions

  • the present disclosure relates generally to semiconductor memory apparatuses and methods, and more particularly, to drift acceleration in resistance variable memory.
  • RAM random-access memory
  • ROM read only memory
  • DRAM dynamic random access memory
  • SDRAM synchronous dynamic random access memory
  • PCRAM phase change random access memory
  • RRAM resistive random access memory
  • MRAM magnetoresistive random access memory
  • CBRAM conductive-bridging random access memory
  • Non-volatile memory can be utilized as volatile and non-volatile memory for a wide range of electronic applications in need of high memory densities, high reliability, and low power consumption.
  • Non-volatile memory may be used in, for example, personal computers, portable memory sticks, solid state drives (SSDs), personal digital assistants (PDAs), digital cameras, cellular telephones, portable music players, e.g., MP3 players, and movie players, among other electronic devices.
  • Data such as program code, user data, and/or system data, such as a basic input/output system (BIOS), are typically stored in non-volatile memory devices.
  • BIOS basic input/output system
  • Resistance variable memory such as PCRAM includes resistance variable memory cells that can store data based on the resistance of a storage element, e.g., a storage element having a variable resistance.
  • resistance variable memory cells can be programmed to store data corresponding to a target state by varying the resistance level of the resistance variable storage element.
  • Resistance variable memory cells can be programmed to a target state, e.g., corresponding to a particular resistance, by applying sources of an electrical field or energy, such as positive or negative electrical signals, e.g., positive or negative voltage or current signals, to the cells, e.g., to the storage element of the cells, for a particular time interval.
  • One of a number of states can be set for a resistance variable memory cell.
  • a single level cell SLC
  • various resistance variable memory cells can be programmed to one of multiple different states corresponding to multiple data states, e.g., 10, 01, 00, 11, 111, 101, 100, 1010, 1111, 0101, 0001, etc. Such cells may be referred to as multi state cells, multi-digit cells, and/or multilevel cells (MLCs).
  • MLCs multilevel cells
  • the state of a resistance variable memory cell can be determined, e.g., read, by sensing current through the cell responsive to an applied interrogation voltage.
  • the sensed current which varies based on the resistance of the cell, can indicate the state of the cell, e.g., the binary data stored by the cell.
  • the resistance of a programmed resistance variable memory cell can drift, e.g., shift, over time. Resistance drift can result in erroneous sensing of a resistance variable memory cell, e.g., a determination that the cell is in a state other than that to which it was programmed, among other issues.
  • the present disclosure includes apparatuses and methods associated drift acceleration in resistance variable memory.
  • a number of embodiments include applying a programming signal to the resistance variable memory cell to program the cell to a target state, subsequently applying a pre-read signal to the resistance variable memory cell to accelerate a drift of a resistance of the programmed cell, and subsequently applying a read signal to the resistance variable memory cell.
  • a number of embodiments of the present disclosure can accelerate resistance drift associated with the programmed states of resistance variable memory cells, e.g., phase change memory cells, which can provide improved stabilization of resistance states as compared to previous approaches.
  • a number of embodiments of the present disclosure can accelerate resistance drift via application of a pre-read signal, e.g., a voltage signal, to the programmed cell before readout.
  • the pre-read signal can be a more viable way to accelerate drift as compared to prior approaches such as drift acceleration through temperature, e.g., via an anneal process.
  • embodiments of the present disclosure can provide benefits such as increased accuracy and/or reliability, e.g., decreased error rate, and/or increased memory life, among other benefits.
  • a number of something can refer to one or more such things.
  • a number of memory cells can refer to one or more memory cells.
  • the designators "M” and “N” as used herein, particularly with respect to reference numerals in the drawings, indicates that a number of the particular feature so designated can be included with a number of embodiments of the present disclosure.
  • Figure 1 is a schematic of a portion of an array 100 of resistance variable memory cells that can be operated in accordance with a number of embodiments of the present disclosure.
  • the memory array 100 includes a number of memory cells, e.g., phase change memory cells, each having an associated access device 102 and resistance variable element 104, e.g., a phase change material 104.
  • the access devices 102 can be operated, e.g., turned on/off, to select the memory cells in order to perform operations such as data programming and/or data reading operations on the resistance variable elements 104.
  • the access devices 102 are metal oxide semiconductor field effect transistors (MOSFETs). As shown in Figure 1 , a gate of each MOSFET 102 associated with each memory cell is coupled to one of a number of access lines 105-0 (WL0), 105-1 (WL1), ..., 105-N (WLN), i.e., each access line 105-0, 105-1, ..., 105-N is coupled to a row of memory cells, e.g., phase change memory cells.
  • the access lines 105-0, 105-1, . . ., 105-N may be referred to herein as "word lines.”
  • the designator "N" is used to indicate that a memory array can include a number of access lines.
  • the resistance variable elements 104 can be, for example, a phase change chalcogenide alloy such as an indium(In)-antimony(Sb)-tellurium(Te) (1ST) material, e.g., In 2 Sb 2 Te 5 , In 1 Sb 2 Te 4 , In 1 Sb 4 Te 7 , etc., or a germanium-antimony-tellurium (GST) material, e.g., a Ge-Sb-Te material such as Ge 2 Sb 2 Te 5 , Ge 1 Sb 2 Te 4 , Ge 1 Sb 4 Te 7 , etc.
  • a phase change chalcogenide alloy such as an indium(In)-antimony(Sb)-tellurium(Te) (1ST) material, e.g., In 2 Sb 2 Te 5 , In 1 Sb 2 Te 4 , In 1 Sb 4 Te 7 , etc.
  • GST germanium-antimony-tellurium
  • phase change materials can include GeTe, In-Se, Sb 2 Te 3 , GaSb, InSb, As-Te, Al-Te, Ge-Sb-Te, Te-Ge-As, In-Sb-Te, Te-Sn-Se, Ge-Se-Ga, Bi-Se-Sb, Ga-Se-Te, Sn-Sb-Te, In-Sb-Ge, Te-Ge-Sb-S, Te-Ge-Sn-O, Te-Ge-Sn-Au, Pd-Te-Ge-Sn, In-Se-Ti-Co, Ge-Sb-Te-Pd, Ge-Sb-Te-Co, Sb-Te-Bi-Se, Ag-In-Sb-Te,
  • each resistance variable element 104 is coupled to one of a number of sense lines 107-0 (BL0), 107-1 (BL1), ..., 107-M (BLM), i.e., each sense line 107-0, 107-1, ..., 107-M is coupled to a column of memory cells, e.g., phase change memory cells.
  • the sense lines 107-0,107-1, ..., 107-M may be referred to herein as "bit lines.”
  • the designator "M" is used to indicate that a memory array can include a number of sense lines.
  • the number of access lines 105-1, ..., 105-N and the number of sense lines 107-1, .. ., 107-M can each be some power of two, e.g., 256 access lines by 4,096 sense lines.
  • embodiments are not limited to particular numbers of access lines and/or sense lines.
  • appropriate voltage and/or current signals e.g., pulses
  • the data stored by a memory cell of array 100 can be determined by turning on an access device 102 and sensing a current passing through the phase change element 104.
  • the current sensed on the bit line associated with the memory cell being read corresponds to a resistance level of the resistance variable element, e.g., phase change element, 104, which in turn corresponds to a particular data value, e.g., a binary value such as 1, 0, 001, 111, 101 1, etc.
  • the access device 102 associated with a particular memory cell can be a device other than a MOSFET.
  • the access device 102 can be a two-terminal access device, e.g., a diode, a three-terminal access device, e.g., a bipolar junction transistor (BJT), among other types of access devices.
  • a memory array can have an architecture other than that illustrated in Figure 1 , as will be understood by one of ordinary skill in the art.
  • a phase change memory cell can be programmed to one of a number of states.
  • a single level cell SLC
  • a reset pulse e.g., a pulse used to program a cell to a reset state, can include a relatively high current pulse applied to the cell for a relatively short period of time such that the phase change material of the cell melts and rapidly cools, resulting in a relatively small amount of crystallization.
  • a set pulse e.g., a pulse used to program a cell to a set state
  • the reset state may correspond to a stored binary data value of "0" and the set state may correspond to a stored binary data value of "1," for instance.
  • a phase change memory cell can be programmed to one of more than two states.
  • a multilevel cell can be programmed to one of a set state, a reset state, and a number of intermediate states, e.g., a number of states corresponding to a resistance levels between a resistance level corresponding to the set state and the resistance level corresponding to the reset state.
  • an MLC can store multiple binary digits.
  • a phase change cell programmable to one of four states e.g., a set state, a reset state, and two intermediate states, can store two binary digits, e.g., 11, 10, 01, and 00.
  • Figure 2A is a graph 210 illustrating signals associated with operating resistance variable memory cells in accordance with prior approaches.
  • Graph 210 includes a programming signal, e.g., pulse, 214 and a read signal, e.g., pulse, 216.
  • Programming signal 214 can be applied to a selected cell to program the cell to a target state.
  • Read signal 216 can be applied to a selected cell to read the cell, to determine the state of the cell.
  • the programming signal 214 and the read signal 216 can be current and/or voltage pulses, for instance.
  • a memory cell e.g., a phase change memory cell, operated in accordance with graph 210 can experience resistance drift during the time between application of programming pulse 214 and read pulse 216. That is, the resistance of the programmed cell can shift over time. Such resistance drift can be due to a spontaneous increase of the resistance of the cell after programming, e.g., due to structural relaxation of an amorphous portion of the phase change element, for instance.
  • Figure 2B is a graph 218 illustrating signals associated with operating resistance variable memory cells in accordance with a number of embodiments of the present disclosure.
  • Graph 218 includes a programming signal, e.g., pulse, 214, a pre-read signal, e.g., pulse, 222, and a read signal, e.g., pulse 220.
  • Programming signal 214 can be applied to a selected cell to program the cell to a selected state.
  • Read signal 220 can be applied to a selected cell to read the cell, e.g., to determine the state of the cell.
  • Pre-read signal 222 can be applied to a selected cell to accelerate a drift of a resistance of a programmed selected cell in accordance with embodiments described herein.
  • a particular pre-read signal 222 can be determined, for instance, based on a target state.
  • the programming signal 214, the pre-read signal 222, and the read signal 216 can be current and/or voltage pulses, for instance.
  • an application of pre-read signal 222 can increase stability of a state of the memory cell, increase a rate of stabilization of a state of the memory cell, and increase accuracy, reliability, and/or memory cell life, among other benefits.
  • application of a pre-read signal can include applying a current and/or voltage to a memory cell for a particular time interval.
  • a pre-read signal 222 can be applied after an application of a programming signal 216 and/or after each of a number of programming operations performed on a selected cell.
  • a subsequent pre-read signal may be applied to the cell only after performing a subsequent programming operation on the cell, in a number of embodiments.
  • the programming signal e.g., signal 214, can include, for example, a set signal or a reset signal, among others.
  • a pre-read signal can be applied for a particular time interval, and a read signal can be applied following the pre-read signal application.
  • the pre-read signal can be configured to accelerate drift of resistance through the cell and increase stability of a programmed state of the cell.
  • Figure 3 illustrates example pre-read signals associated with operating resistance variable memory cells in accordance with a number of embodiments of the present disclosure.
  • a number of different pre-read signals e.g., 322-1, 322-2, 322-3, and 322-4, can be utilized to accelerate resistance drift.
  • applying the pre-read signal for a longer time interval than the read signal may result in accelerated drift and/or increased stability of the programming state, for example.
  • Increasing the pre-read signal time interval e.g., 323-1, may increase drift acceleration and/or a stability increase regardless of the length of the read signal, in a number of embodiments.
  • pre-read signal 322-2 is applied to a selected cell for a time interval 323-2 and has an amplitude less than that of a read signal 320-2, e.g., v pre-read ⁇ v read .
  • pre-read signal 322-3 is applied to a selected cell for a time interval 323-3 and has an amplitude greater than that of a read signal 320-3, e.g., v pre-read > v read .
  • Pre-read signal 322-4 is applied to a selected cell in a number of pre-read pulses, e.g., at least two, at a number of intervals, e.g., time intervals, prior to applying a read signal 320-4.
  • a train of pre-read pulses 322-4 of different amplitudes and time intervals are applied to a selected cell.
  • Increasing a pre-read signal amplitude can result in increased drift acceleration and/or a stability increase; however, a pre-read amplitude that is above a threshold may result in increased disturbance, e.g., noise, in the memory cell and/or a programming reset.
  • a decreased pre-read amplitude may result in a decreased drift acceleration.
  • Application of a number of pre-read pulses can accelerate resistance drift, and the application can be stopped at a desired point of operation. For example, if it is desired to perform an action on the array, the application of the pre-read pulse can be stopped, the action can be performed, and the application can be restarted.
  • An amplitude of the pre-read signal applied can affect the rate of acceleration of drift in a number of embodiments. For example, a portion of a pre-read signal having a particular amplitude can be applied to the cell, and a different portion of the pre-read signal having a different amplitude can be applied to the cell. Each portion can be configured to accelerate the drift of the resistance of the cell at a different rate than one another. For example, a higher amplitude pre-read signal may result in an increased drift acceleration as compared to a lower amplitude pre-read signal. A time interval for which the pre-read signal is applied to the cell can be adjusted. Increasing a time interval of a pre-read signal application may result in an increased drift acceleration, for example.
  • the read signal can be applied to the cell after some period of time following application of the pre-read signal, for example.
  • the read signal application can be shifted in time to allow for actions to be performed on the cell and/or the array, for example.
  • a number of pre-read signals can be applied before the read signal in a number of embodiments.
  • the method including drift acceleration in resistance variable memory can be performed during a wafer testing process.
  • the method including drift acceleration in resistance variable memory can include testing the memory cell, in a number of embodiments. For example, a programming signal can be applied to the memory cell, and a pre-read signal can be applied to the memory cell. The memory cell can be tested, e.g., following the pre-read signal application, and a read signal can be applied to the memory cell.
  • Figure 4 is a graph 425 illustrating acceleration of resistance drift in accordance with a number of embodiments of the present disclosure.
  • the graph 425 illustrates read current (nA) versus time (s) for a number of programmed phase change memory cells.
  • the read current associated with a programmed memory cell drifts, e.g., decreases, over time.
  • v can be about 0.1 at room temperature for a cell programmed to a full reset, e.g., fully amorphous, state.
  • the curve 424 represents an average current decrease associated with a number of cells that do not receive a pre-read signal in accordance with embodiments described herein. For instance, curve 424 represents programmed cells receiving an applied bias voltage pulse only when the cell is being read, e.g., only at read time as shown at 444.
  • the curve 426 represents an average current decrease associated with a number of cells that receive an applied pre-read signal in accordance with embodiments described herein.
  • curve 426 represents programmed cells receiving a constant applied bias voltage over a particular time interval with the cells being read after application of the pre-read signal, e.g., as shown at 442.
  • curve 426 decreases more rapidly than curve 424. That is, the drift exponent (v) corresponding to curve 426, e.g., 0.105, is larger than the drift exponent corresponding to curve 424, e.g., 0.065. As such, curve 426 represents about a 40% increase in the drift exponent (v) as compared to curve 424, which corresponds to an accelerated read current drift, e.g., increased resistance drift, associated with curve 426.
  • the increased v associated with curve 426 can be due to an electric field induced structural relaxation enhancement associated with the constant applied bias voltage applied subsequent to programming the cells and prior to reading the cells.
  • the accelerated drift, e.g., increased v, associated with curve 426 can be similar to drift acceleration due to an annealing process performed on the cells. Therefore, a number of embodiments of the present disclosure can result in an increased drift acceleration without performing an anneal process to induce structural relaxation, for instance.
  • FIG. 5 illustrates a circuit 530 associated with accelerating drift in accordance with a number of embodiments of the present disclosure.
  • Memory cell 532 can be a resistance variable memory cell, e.g., phase change memory cell.
  • the circuit 530 includes a switch 540 operable to selectively couple the memory cell to a program signal 534 (PGM), a pre-read signal 536 (PRE-READ), and a read signal 538 (READ).
  • PGM program signal
  • PRE-READ pre-read signal
  • READ read signal
  • the pre-read signal 536 can be a pre-read signal such as those described in association with Figures 2B and 3 , for instance.
  • Figure 6 is an apparatus in the form of a memory device 650 in accordance with a number of embodiments of the present disclosure.
  • an "apparatus" can refer to, but is not limited to, any of a variety of structures or combinations of structures, such as a circuit or circuitry, a die or dice, a module or modules, a device or devices, or a system or systems, for example.
  • memory device 650 includes a controller 652 coupled to a memory array 600.
  • Memory array 600 can be, for example, memory array 100 previously described in connection with Figure 1 Although one memory array is shown in Figure 6 , embodiments of the present disclosure are not so limited (e.g., memory device 650 can include more than one memory array coupled to controller 652).
  • Controller 652 can include, for example, control circuitry and/or firmware.
  • controller 652 can include circuitry 630, as illustrated in Figure 6 .
  • Controller 652 can be included on the same physical device (e.g., the same die) as memory array 600, or can be included on a separate physical device that is communicatively coupled to the physical device that includes memory array 600.
  • components of controller 652 can be spread across multiple physical devices (e.g., some components on the same die as the array, and some components on a different die, module, or board).
  • Circuitry 630 can perform operations in accordance with a number of embodiments of the present disclosure to determine the state of the memory cells in memory array 600.
  • circuitry 630 can be, for example, circuit 530 previously described in connection with Figure 5 .
  • memory device 630 can include address circuitry to latch address signals provided over I/O connectors through I/O circuitry. Address signals can be received and decoded by a row decoder and a column decoder, to access memory array 600.
  • the present disclosure includes apparatuses and methods of operating a multilevel phase change memory cell of an array of multilevel phase change memory cells as set forth in the claims, .

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  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
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US13/647,527 US9099174B2 (en) 2012-10-09 2012-10-09 Drift acceleration in resistance variable memory
PCT/US2013/063194 WO2014058695A1 (en) 2012-10-09 2013-10-03 Drift acceleration in resistance variable memory

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EP2907136A4 EP2907136A4 (en) 2016-05-25
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US9245620B2 (en) 2016-01-26
US20140098593A1 (en) 2014-04-10
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EP2907136A1 (en) 2015-08-19
JP2016500193A (ja) 2016-01-07
US9858999B2 (en) 2018-01-02
CN104704568A (zh) 2015-06-10
US9099174B2 (en) 2015-08-04
US20180374534A1 (en) 2018-12-27
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US20160104530A1 (en) 2016-04-14
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