EP2883241A4 - Verfahren zur herstellung eines halbleitersubstratprodukts und einer ätzflüssigkeit - Google Patents

Verfahren zur herstellung eines halbleitersubstratprodukts und einer ätzflüssigkeit

Info

Publication number
EP2883241A4
EP2883241A4 EP13827735.5A EP13827735A EP2883241A4 EP 2883241 A4 EP2883241 A4 EP 2883241A4 EP 13827735 A EP13827735 A EP 13827735A EP 2883241 A4 EP2883241 A4 EP 2883241A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor substrate
etching liquid
substrate product
producing semiconductor
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP13827735.5A
Other languages
English (en)
French (fr)
Other versions
EP2883241A1 (de
Inventor
Akiko Koyama
Atsushi Mizutani
Tetsuya Kamimura
Tetsuya Shimizu
Tadashi Inaba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of EP2883241A1 publication Critical patent/EP2883241A1/de
Publication of EP2883241A4 publication Critical patent/EP2883241A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66537—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a self aligned punch through stopper or threshold implant under the gate region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
EP13827735.5A 2012-08-10 2013-07-24 Verfahren zur herstellung eines halbleitersubstratprodukts und einer ätzflüssigkeit Withdrawn EP2883241A4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012179042 2012-08-10
JP2012283429A JP2014057039A (ja) 2012-08-10 2012-12-26 半導体基板製品の製造方法及びエッチング液
PCT/JP2013/070675 WO2014024737A1 (en) 2012-08-10 2013-07-24 Method of producing semiconductor substrate product and etching liquid

Publications (2)

Publication Number Publication Date
EP2883241A1 EP2883241A1 (de) 2015-06-17
EP2883241A4 true EP2883241A4 (de) 2016-03-23

Family

ID=50067968

Family Applications (1)

Application Number Title Priority Date Filing Date
EP13827735.5A Withdrawn EP2883241A4 (de) 2012-08-10 2013-07-24 Verfahren zur herstellung eines halbleitersubstratprodukts und einer ätzflüssigkeit

Country Status (4)

Country Link
EP (1) EP2883241A4 (de)
JP (1) JP2014057039A (de)
TW (1) TWI625382B (de)
WO (1) WO2014024737A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI558850B (zh) * 2014-03-29 2016-11-21 精密聚合物股份有限公司 電子零件用處理液及電子零件之製造方法
KR102160019B1 (ko) * 2016-09-29 2020-09-28 후지필름 가부시키가이샤 처리액 및 적층체의 처리 방법
JPWO2018061670A1 (ja) * 2016-09-29 2019-06-24 富士フイルム株式会社 処理液、および積層体の処理方法
US10879076B2 (en) * 2017-08-25 2020-12-29 Versum Materials Us, Llc Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/silicon stack during manufacture of a semiconductor device
JP2021048369A (ja) * 2019-09-20 2021-03-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、基板処理装置および基板処理液
KR102548824B1 (ko) * 2020-04-07 2023-06-27 세메스 주식회사 기판 처리 방법 및 기판 처리 장치
CN118633144A (zh) * 2022-02-08 2024-09-10 东京毅力科创株式会社 基板处理方法和基板处理装置

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2529865A1 (de) * 1975-07-04 1977-01-20 Ibm Deutschland Waessrige aetzloesung zum selektiven aetzen von siliciumdioxidschichten auf halbleiterkoerpern
JPS6046913A (ja) * 1983-08-24 1985-03-14 Matsushita Electric Ind Co Ltd 二酸化硅素薄膜の微細加工法
EP0805484A1 (de) * 1995-01-13 1997-11-05 Daikin Industries, Limited Verfahren zum reinigen von substraten
US20040124492A1 (en) * 2002-09-12 2004-07-01 Kouji Matsuo Semiconductor device and method of manufacturing the same
US20050017319A1 (en) * 2001-09-12 2005-01-27 Kenzo Manabe Semiconductor device and production method therefor
JP2006278983A (ja) * 2005-03-30 2006-10-12 Daikin Ind Ltd 高誘電率材料膜除去用エッチング液
WO2006124201A2 (en) * 2005-05-13 2006-11-23 Sachem, Inc. Selective wet etching of oxides
WO2010039936A2 (en) * 2008-10-02 2010-04-08 Advanced Technology Materials, Inc. Use of surfactant/defoamer mixtures for enhanced metals loading and surface passivation of silicon substrates
WO2012023387A1 (ja) * 2010-08-20 2012-02-23 三菱瓦斯化学株式会社 トランジスタの製造方法
US20120070998A1 (en) * 2010-09-21 2012-03-22 Techno Semichem Co., Ltd. Composition for Wet Etching of Silicon Dioxide

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283028A (ja) * 1986-09-29 1988-11-18 Hashimoto Kasei Kogyo Kk 微細加工表面処理剤
JPH0969578A (ja) * 1995-08-31 1997-03-11 Sharp Corp 半導体装置の製造方法
US20080125342A1 (en) * 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
US8669617B2 (en) * 2010-12-23 2014-03-11 Intel Corporation Multi-gate transistors

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2529865A1 (de) * 1975-07-04 1977-01-20 Ibm Deutschland Waessrige aetzloesung zum selektiven aetzen von siliciumdioxidschichten auf halbleiterkoerpern
JPS6046913A (ja) * 1983-08-24 1985-03-14 Matsushita Electric Ind Co Ltd 二酸化硅素薄膜の微細加工法
EP0805484A1 (de) * 1995-01-13 1997-11-05 Daikin Industries, Limited Verfahren zum reinigen von substraten
US20050017319A1 (en) * 2001-09-12 2005-01-27 Kenzo Manabe Semiconductor device and production method therefor
US20040124492A1 (en) * 2002-09-12 2004-07-01 Kouji Matsuo Semiconductor device and method of manufacturing the same
JP2006278983A (ja) * 2005-03-30 2006-10-12 Daikin Ind Ltd 高誘電率材料膜除去用エッチング液
WO2006124201A2 (en) * 2005-05-13 2006-11-23 Sachem, Inc. Selective wet etching of oxides
WO2010039936A2 (en) * 2008-10-02 2010-04-08 Advanced Technology Materials, Inc. Use of surfactant/defoamer mixtures for enhanced metals loading and surface passivation of silicon substrates
WO2012023387A1 (ja) * 2010-08-20 2012-02-23 三菱瓦斯化学株式会社 トランジスタの製造方法
US20120070998A1 (en) * 2010-09-21 2012-03-22 Techno Semichem Co., Ltd. Composition for Wet Etching of Silicon Dioxide

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2014024737A1 *

Also Published As

Publication number Publication date
WO2014024737A1 (en) 2014-02-13
TW201412948A (zh) 2014-04-01
JP2014057039A (ja) 2014-03-27
EP2883241A1 (de) 2015-06-17
TWI625382B (zh) 2018-06-01

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