EP2828078A1 - Utilisation d'une structure multicouche a base de polymere halogene comme feuille de protection de module photovoltaique - Google Patents
Utilisation d'une structure multicouche a base de polymere halogene comme feuille de protection de module photovoltaiqueInfo
- Publication number
- EP2828078A1 EP2828078A1 EP13719906.3A EP13719906A EP2828078A1 EP 2828078 A1 EP2828078 A1 EP 2828078A1 EP 13719906 A EP13719906 A EP 13719906A EP 2828078 A1 EP2828078 A1 EP 2828078A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- substrate
- multilayer structure
- use according
- stack
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920000642 polymer Polymers 0.000 title claims abstract description 28
- 230000001681 protective effect Effects 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 239000000463 material Substances 0.000 claims abstract description 20
- 239000008393 encapsulating agent Substances 0.000 claims abstract description 13
- 229920001577 copolymer Polymers 0.000 claims description 25
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 21
- 239000002033 PVDF binder Substances 0.000 claims description 20
- 239000011521 glass Substances 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 8
- UUAGAQFQZIEFAH-UHFFFAOYSA-N chlorotrifluoroethylene Chemical group FC(F)=C(F)Cl UUAGAQFQZIEFAH-UHFFFAOYSA-N 0.000 claims description 8
- 239000002861 polymer material Substances 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 8
- 239000012298 atmosphere Substances 0.000 claims description 6
- 229920002313 fluoropolymer Polymers 0.000 claims description 6
- 239000000178 monomer Substances 0.000 claims description 6
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 claims description 5
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 5
- 239000005977 Ethylene Substances 0.000 claims description 5
- BLTXWCKMNMYXEA-UHFFFAOYSA-N 1,1,2-trifluoro-2-(trifluoromethoxy)ethene Chemical compound FC(F)=C(F)OC(F)(F)F BLTXWCKMNMYXEA-UHFFFAOYSA-N 0.000 claims description 4
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 claims description 4
- XUCNUKMRBVNAPB-UHFFFAOYSA-N fluoroethene Chemical group FC=C XUCNUKMRBVNAPB-UHFFFAOYSA-N 0.000 claims description 4
- 239000004811 fluoropolymer Substances 0.000 claims description 4
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 239000011888 foil Substances 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 230000007423 decrease Effects 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052681 coesite Inorganic materials 0.000 abstract description 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 3
- 229910052682 stishovite Inorganic materials 0.000 abstract description 3
- 229910052905 tridymite Inorganic materials 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 127
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 37
- 230000004888 barrier function Effects 0.000 description 25
- 238000000151 deposition Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 14
- 230000008021 deposition Effects 0.000 description 13
- 239000007789 gas Substances 0.000 description 13
- 229920000139 polyethylene terephthalate Polymers 0.000 description 13
- 239000005020 polyethylene terephthalate Substances 0.000 description 13
- 230000032683 aging Effects 0.000 description 8
- 239000004926 polymethyl methacrylate Substances 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- 239000001307 helium Substances 0.000 description 7
- 229910052734 helium Inorganic materials 0.000 description 7
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- -1 ethylene, propylene Chemical group 0.000 description 6
- 238000003475 lamination Methods 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 6
- 229920000307 polymer substrate Polymers 0.000 description 6
- 239000004800 polyvinyl chloride Substances 0.000 description 6
- 229920000915 polyvinyl chloride Polymers 0.000 description 6
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 229920002620 polyvinyl fluoride Polymers 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229920006370 Kynar Polymers 0.000 description 3
- 238000001125 extrusion Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000016571 aggressive behavior Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005102 attenuated total reflection Methods 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004949 mass spectrometry Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical group ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- 239000012963 UV stabilizer Substances 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical group ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- YFXKCWHJWJCIFI-UHFFFAOYSA-N [Si-]1=[SiH]C=CC=C1.[In+3].[Cu+2].[Si-]1=[SiH]C=CC=C1.[Si-]1=[SiH]C=CC=C1.[Si-]1=[SiH]C=CC=C1.[Si-]1=[SiH]C=CC=C1 Chemical compound [Si-]1=[SiH]C=CC=C1.[In+3].[Cu+2].[Si-]1=[SiH]C=CC=C1.[Si-]1=[SiH]C=CC=C1.[Si-]1=[SiH]C=CC=C1.[Si-]1=[SiH]C=CC=C1 YFXKCWHJWJCIFI-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 239000006184 cosolvent Substances 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010101 extrusion blow moulding Methods 0.000 description 1
- 238000007765 extrusion coating Methods 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 238000007647 flexography Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000012623 in vivo measurement Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 239000001023 inorganic pigment Substances 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920001485 poly(butyl acrylate) polymer Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010557 suspension polymerization reaction Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000003017 thermal stabilizer Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/1055—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
- B32B17/10761—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer containing vinyl acetal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/1055—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
- B32B17/10788—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer containing ethylene vinylacetate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the present invention relates to the use of a multilayer structure in the front and / or rear protection foil of a photovoltaic module, said multilayer structure comprising a substrate based on halogenated polymer covered with at least one stack of two layers of SiO 2 and SiO x N y H z , respectively. It also relates to a photovoltaic module comprising the above-mentioned multilayer structure in its front and / or back protection sheet.
- a photovoltaic module or solar panel, is an electrical generator that transforms part of the solar energy it receives into direct current; it consists of a set of photovoltaic cells based on a semiconductor material such as silicon, interconnected electrically and protected by an adhesive encapsulating material, generally based on ethylene / vinyl acetate copolymer (EVA).
- EVA ethylene / vinyl acetate copolymer
- An upper protective sheet or "frontsheet” in English
- a protective sheet on the back of the module or “backsheet” in English
- These protective sheets front and rear commonly known in French as the front face (FAV) and rear face (FAR) modules, may, in turn consist of one or more layers of similar or different materials.
- the front and rear faces will have particular properties.
- the most widespread panels currently contain cells based on single or multi-crystalline silicon, encapsulated by EVA and protected on the front face by a glass plate and, on the rear face, by a multi-layer structure containing poly (ethylene terephthalate) (PET) between two layers based on a fluorinated polymer such as polyvinyl fluoride (PVF) or polyvinylidene fluoride (PVDF).
- PET poly (ethylene terephthalate)
- PVDF polyvinyl fluoride
- PVDF polyvinylidene fluoride
- the front glass provides good shock protection, good transparency and excellent moisture protection, despite the disadvantages of a weight therefore because the glass, in typical thickness of 3 mm, is the main contributor to the weight of the module.
- the glass also offers good resistance to aging.
- the function of the rear face is also to protect the cell against humidity, even if the level of protection is much lower than that offered by the glass, but also to ensure the electrical insulation of the cells, block UV rays and have good mechanical resistance, especially tearing, while allowing the module to resist aging during its lifetime which must exceed, in many cases, 20 years. It is understood that the nature and design of these front and rear protective sheets therefore play a key role in the longevity of the photovoltaic module.
- a flexible photovoltaic module front protection layer comprising a transparent halogenated polymer substrate such as PVDF. (polyvinylidene fluoride) optionally coated, on the outside, with a SiOx layer for reinforcing its barrier properties. It is known that the SiOx layer can be deposited by methods such as chemical vapor deposition, reactive sputtering or thermal evaporation.
- this type of inorganic deposition generates mechanical stresses related in particular to the differences in mechanical and thermal behavior between the inorganic layer and the polymer, in particular their differences in elastic modulus, deformation capacity and coefficients of thermal expansion. These constraints cause damage to the deposited inorganic layer, which has the effect of limiting its functional properties. Cracks may then appear which reduce the gas barrier properties of the polymer substrate and the inorganic deposition.
- these SiOx deposition techniques are relatively expensive. To overcome this disadvantage, it is certainly possible to deposit the SiOx layer by sol-gel route. However, the layer thus obtained is porous and therefore can not fulfill its function as a gas barrier layer.
- This structure is prepared by deposition of perhydropolysilazane (PHPS) on a PET substrate, then conversion of the PHPS by VUV and UV irradiation to form at least one stack having a total thickness of 250 nm and comprising a PHPS layer partially converted to nitride. hydrogenated silicon, a layer partially converted interfacial of silicon oxynitride and a thin layer of rigid silica. Different stacks are made, possibly separated from each other by a layer of PVA. If this structure has undeniable advantages vis-à-vis the prior art, its gas tightness needs to be further improved.
- PHPS perhydropolysilazane
- JP2011-143327 and JP2011-173057 have also been suggested in JP2011-143327 and JP2011-173057 to apply one or more barrier layers on a substrate which may be PVC, by deposition of perhydropolysilazane on the substrate, followed by two VUV irradiations under atmospheres. different, or a substrate treatment (including UV) and VUV irradiation.
- a substrate treatment including UV
- VUV irradiation is always carried out in the presence of a high oxygen and / or water level which does not make it possible to obtain a satisfactory barrier layer.
- a photovoltaic module made of glass
- a transparent, abrasion-resistant film consisting for example of a fluoropolymer hydrophobic which is either loaded with inorganic particles, or inorganic graft.
- a hard moisture barrier layer may be interposed between the glass substrate and the film. This may especially be formed of silicon oxide obtained from perhydropolysilazane. It would be desirable to have a front or back layer of photovoltaic module that is more flexible and lighter than that proposed in this document.
- the present invention relates to the use of a multilayer structure in the front and / or rear protection film of a photovoltaic module comprising photovoltaic cells covered with an encapsulant.
- the front and / or rear protective sheet in which the multilayer structure is included does not contain any glass layer with a thickness of 50 ⁇ m or more.
- This multilayer structure comprises: (a) a substrate containing at least one halogenated polymer, and (b) at least one stack of a layer (A) of SiO 2 and a layer (B) of SiO x N y H z disposed between the substrate and the layer (A). Said stack is disposed on the face of the substrate facing the encapsulant and possibly on the opposite face of the substrate.
- the layer (A) and the layer (B) have thicknesses (e A , e B ) such that the thickness (e A ) of the layer (A) is less than or equal to 60 nm, the thickness (e B ) of the layer (B) is greater than twice the thickness (e A ) of the layer (A) and the sum of the thicknesses of the layer (A) and the layer (B) is between 100 nm and 500 nm, and in which z is strictly less than the ratio (x + y) / 5, advantageously z is strictly less than the ratio (x + y) / 10.
- the present invention also relates to a photovoltaic module enclosing photovoltaic cells protected by an encapsulant, a front protective sheet and a rear protective sheet, wherein the front and / or rear protective sheet comprises a multilayer structure as defined above and does not contain a glass layer with a thickness of 50 ⁇ m or more.
- the multilayer structure used according to the invention is a film having good chemical resistance and aging, which can be transparent and which protects photovoltaic components vis-à-vis oxygen for the greatest number of years, and at an acceptable production cost.
- the use of a liquid phase deposition technique of the bilayer stack according to the invention makes it possible to obtain in a simple manner and at a low cost a level of gas-tightness which can not be obtained by conventional deposition technologies, such as physical vapor deposition and deposition. chemical vapor phase.
- the multilayer structure used according to the invention comprises, and preferably consists of, a substrate containing at least one halogenated polymer and at least one stack consisting of a layer of SiO 2 and a layer of material of SiO x N y H z type interposed between the substrate and the SiC layer> 2.
- the SiO x N y H z type layer forms a mechanical accommodation layer between the substrate and the SiO 2 layer and makes it possible to adapt the stresses between the substrate and the SiC 2 layer, which limits the deterioration of the layer.
- SiC> 2 improves the gas tightness of the SiC layer> 2.
- the interposition of a layer forming a mechanical interface that is thicker and less rigid than the SiC 2 layer prevents the SiO 2 layer from breaking.
- the substrate comprises at least one halogenated polymer, preferably transparent. It is usually a thermoplastic polymer.
- halogenated polymer is intended to mean a homopolymer or copolymer of which at least one of the monomers comprises a CX bond, where X is a fluorine, chlorine or bromine atom.
- the halogenated polymer may in particular be a fluorinated and / or chlorinated homo- or copolymer, preferably a fluorinated homo- or copolymer.
- the fluorinated homo- and copolymers may, for example, be chosen from those comprising at least 50 mol%, and advantageously consisting of monomers of formula (I):
- PVDF polyvinylidene fluoride
- HFP hexafluoropropylene
- CFE chlorotrifluoroethylene
- HFP hexafluoropropylene
- VF3 trifluoroethylene
- TFE tetrafluoroethylene
- VF3 trifluoroethylene
- FEP fluoroethylene / propylene copolymers
- copolymers of ethylene with fluoroethylene / propylene FEP
- fluoroethylene / propylene FEP
- TFE tetrafluoroethylene
- PMVE perfluoromethylvinyl ether
- CFE chlorotrifluoroethylene
- HFP hexafluoropropylene
- chlorinated polymer is polyvinyl chloride or PVC.
- PVC polyvinyl chloride
- Other chlorinated polymers useful in this invention are polyvinyl chloride (CPVC) such as ARKEMA Lucalor and vinyl chloride copolymers with monomers such as acrylonitrile, ethylene, propylene or vinyl acetate, as well as polyvinylidene chloride and its copolymers with vinyl monomers, in particular acrylic monomers.
- CPVC polyvinyl chloride
- ARKEMA Lucalor polyvinyl chloride copolymers with monomers such as acrylonitrile, ethylene, propylene or vinyl acetate, as well as polyvinylidene chloride and its copolymers with vinyl monomers, in particular acrylic monomers.
- the chlorinated polymer used according to the invention is a mixture including at least two of the chlorinated polymers or copolymers above.
- vinyl chloride copolymers it is preferable that the proportion of vinyl chloride units
- halogenated polymers used according to the invention can be obtained by suspension polymerization processes, microsuspension, emulsion or bulk, well known to those skilled in the art.
- the halogenated polymer substrate may for example have a thickness ranging from 5 to 500 ⁇ m, in particular from 20 to 100 ⁇ m and preferably from 25 to 60 ⁇ m.
- the halogenated polymeric substrate may be surface-treated, for example, by Corona type treatment, so as to improve its adhesion to the inorganic deposition layers. It is generally preferred to subject the substrate to any treatment for increasing its surface tension to values of the order of 50 - 60 mN / m. (or dyn / cm)].
- the resistance of the substrate to radiation, especially UV radiation can be enhanced by the addition of organic or inorganic UV stabilizers.
- this polymer substrate is covered, on at least one of its faces, with at least one bilayer stack.
- This bilayer stack may be present on the face of the substrate facing the encapsulant and possibly on its opposite face.
- Each layer of this stack has a particular composition and thickness. More specifically, this stack consists of a SiC layer> 2 and a layer of SiO x N y H z material interposed between the substrate and the SiC layer> 2.
- the composition of the SiO x N y H z layer is such that y and z are strictly greater than 0 and z is strictly less than the ratio (x + y) / 5, advantageously z is strictly less than the ratio (x + y) / 10.
- the value of x decreases from the interface between the SiO x N y H z layer and the S102 layer to the substrate, and that the value of y increases from the interface between the SiO x layer. N y H z and the S102 layer to the substrate.
- x varies from 2 to 0 and / or varies from a value strictly greater than 0 but less than 1 up to a value of 1.
- these layers have thicknesses such that the thickness of the layer of SiC> 2 is less than or equal to 60 nm, the thickness of the layer of SiO x N y H z is greater than twice the thickness of the SiC layer> 2 and the sum of the thicknesses of these layers is included between 100 nm and 500 nm.
- the layer of SiC> 2 may for example have a thickness of 40 to 60 nm and the SiO x N y H z layer may have a thickness ranging for example from 100 to 200 nm, in particular from 150 to 200 nm.
- the Young M A modulus of the SiO 2 and M B layer of the SiO x N y H z layer are such that:
- the SiO x N y H z layer is not only thicker than the SiC 2 layer, but also less rigid than the SiC x 2 layer, due to its greater Young's modulus. low, so that it can better fit the constraints, and to limit the differential strain between the layer 2 and the substrate S1O.
- the refractive index of the multilayer structure is preferably greater than 1.5.
- the materials of its constituent layers can be amorphous.
- the aforementioned bilayer stack may be formed according to a method which will now be described. This process comprises a step of converting a perhydropolysilazane (PHPS), that is to say a compound of formula (I):
- PHPS perhydropolysilazane
- n is an integer such that the number average molecular weight of the PHPS is between 150 and 150,000 g / mol.
- the PHPS is used in the form of a solution in an aprotic, polar or apolar solvent, such as ethers (including dibutyl ether), esters, ketones, aliphatic or aromatic hydrocarbons (including xylene) or mixtures of these solvents.
- concentration of the PHPS in the solution depends on the thickness of the liquid film to be deposited. For a film thickness of the order of 5 ⁇ m, it can thus range from 2 to 15% by weight of PHPS.
- the application of the PHPS solution to the substrate can be carried out by any known means, in particular by heliography, flexography, slit die coating, centrifugation, roller coating, sputtering or coating with Meyer bars. It is furthermore preferred that the PHPS deposition be carried out at room temperature.
- the solution of PHPS can be modified, so that the wettability of the solution during deposition is adapted to the low free surface energy of certain halogenated substrates such as PVDF, especially when it is not surface-treated.
- certain halogenated substrates such as PVDF
- the PHPS in the form of a solution in an aprotic polar solvent such as dibutyl ether, it may be useful to dilute it with an apolar solvent such as an alkane.
- the volume ratio of the apolar solvent to the aprotic polar solvent may be adjusted by those skilled in the art depending on the chemical nature of the substrate and may especially be from 1:10 to 1: 2.
- it is possible to increase the surface energy of the halogenated substrate by subjecting it to plasma or corona treatment.
- the solvent is evaporated either by free drying in air, under a stream of inert gas such as nitrogen or under vacuum, at room temperature, or by infrared lamp or air or depleted air or hot nitrogen .
- the deposited layer of PHPS advantageously has a thickness, after evaporation of the solvent, of between 100 and 400 nm, preferably between 150 and 350 nm, better still, between 200 and 300 nm.
- the conversion of the PHPS applied to the substrate can then be carried out by means of irradiation using UV radiation at a wavelength greater than or equal to 200 nm, especially between 240 and 280 nm, and simultaneously or successively, an irradiation using ultraviolet radiation of the vacuum or VUV (for "Vacuum Ultraviolet") at a wavelength less than or equal to 200 nm, in particular between 180 and 200 nm, under a atmosphere with a rate oxygen less than 500 ppm and a water level less than or equal to 1000 ppm.
- VUV for "Vacuum Ultraviolet
- the irradiation is generally carried out at room temperature and it can for example be done by means of a low pressure mercury lamp which combines a VUV wavelength of 185 nm and a UV wavelength of 254 nm.
- the dose received for the radiation at 185 nm is for example less than 20 joules / cm 2 .
- the formation of the SiO 2 layer and the formation of the SiO x N y H z layer are simultaneous.
- the process for forming these layers is carried out under specific oxygen and water-depleted conditions which make it possible to limit the thickness of the SiO 2 layer as well as the conversion of the SiO x N y H z layer, and thus of obtain the composition and thickness characteristics of the above-mentioned layers.
- the duration of the irradiation is a function of the thickness of the deposit and generally ranges from 1 to 10 minutes. For a thickness of 200 to 300 nm, an irradiation time of about 5 minutes is generally sufficient.
- the process can be carried out in two steps: in a first step, a layer of PHPS is deposited on the substrate. This layer is then subjected to UV irradiation of wavelength greater than 220 nm in the presence of a negligible oxygen and water level, ie less than 10 ppm. In a second step, another layer of PHPS is deposited on the first layer, then this second layer is irradiated by VUV at a wavelength of less than 200 nm in the presence of oxygen, the oxygen concentration then being between 10 ppm and 500 ppm.
- the small amount of Si-H can be detected in reflection on the substrates described in the invention.
- the transmittance in the wave number range 2100-2300 CIIT 1 is then greater than 80%, preferably greater than 90%.
- the chemical composition of the layers after irradiation can be further verified by mass spectrometry at flight time in secondary ionization (TOF-SIMS), for example using an IontoF V spectrometer equipped with a 25 keV and 1.5 pA Bi + ion source and an ion source Cs + 2 keV and 128 nA.
- TOF-SIMS secondary ionization
- the structure used according to the invention may comprise a layer of a polymer material deposited on the bilayer stack, for example by evaporation and / or polymerization.
- the polymer used in this layer may be halogenated or not. It may especially be chosen from hybrid materials such as organosilanes, polymeric block materials with lamellar structure, co-continuous or matrix / inclusion type, such as acrylic block copolymers such as poly (methyl methacrylate).
- the layer of polymeric material preferably has a thickness less than or equal to that of the substrate, even though layers of polymeric material of greater thickness than the substrate may be preferred in particular structures.
- the layers of this polymeric material may have, independently from each other, a thickness of 1 to 30 pm, for example.
- barrier properties to elements other than gases, for example UV rays, or moisture absorption properties, for example. Thanks to the SiO x N y H z layer, the mechanical problems during the deposition of the aforementioned polymer material layer are limited, such as the curvature of the entire structure.
- the multilayer structure may comprise n stacks, n being a positive integer greater than 1, each stack comprising a layer (A) of Si0 2 and a layer (B) of SiO X iN yi H zi type material , i being a positive integer between 1 and n and zi being strictly less than the ratio (xi + yi) / 5, advantageously z ⁇ is strictly less than the ratio (Xi + yi) / 10, xi, yi, z ⁇ being identical or not for the different values of i.
- a structure can be prepared by repeating the steps of the method described above. The effect on gas barrier properties is further increased.
- a particularly preferred multilayer structure is one comprising one or more of the stacks described above, arranged symmetrically on one side and the other (front and back) of the substrate.
- a single bilayer stack or n stack of bilayers can thus advantageously be arranged on the front and back side of the polymer substrate.
- the multilayer structures comprising n stacks of inorganic bilayers may comprise at least one layer of polymer material disposed between the layer of SiO 2 of a stack and the layer of SiO X iN yi H zi of the stack following directly, for example n-1 layers of polymer material, each of the layers of polymer material being arranged between two stacks.
- the functional properties of the structure are thus reduced because of the series of n dense layers Ai S1O 2 and n-1 interposition layers of polymer material.
- All the multilayer structures described above are particularly useful as the front face of photovoltaic modules. In this case it is preferred that they be transparent, that is to say that they have a total transmittance, measured according to ASTM D1003, of greater than 85%. In addition, these structures can be inserted into opaque or transparent multi-layer laminates that can serve as a rear face of photovoltaic modules.
- the multilayer structure is previously shaped according to conventional techniques for producing films, sheets or plates.
- extrusion blow molding extrusion lamination, extrusion coating, extrusion of flat film or extrusion of sheets. All these techniques are known to those skilled in the art and it will adapt the conditions of implementation of different techniques (extruder temperature, connection, dies, speed of rotation of the screws, cooling temperatures of the cooling cylinders, etc. .. ) to form the structure according to the invention having the desired shape and thicknesses. It would not go beyond the invention if this structure was shaped by pressing techniques, lamination with adhesives en route solvent or aqueous, or if it undergoes an additional annealing step.
- the invention therefore also relates to a photovoltaic module enclosing photovoltaic cells protected by an encapsulant, a front protective sheet and a rear protective sheet, wherein the front and / or rear protective sheet comprises a multilayer structure as described above and does not contains no glass layer with a thickness of 50 ⁇ m or more.
- the multilayer structure may constitute the front protective sheet of the photovoltaic module.
- the rear protective sheet may consist of a three-layer structure, containing a central layer based on polyester such as polyethylene terephthalate (PET), surrounded by two fluoropolymer-based layers, such as the polyvinylidene fluoride (PVDF), polyvinyl fluoride (PVF) or poly (ethylene / tetrafluoroethylene) (ETFE).
- the rear protective sheet may consist of polyolefins, in particular polypropylene, optionally grafted polyamide or functionalized with maleic anhydride, alone or in combination with one or more optionally functionalized fluoropolymer layers, such as PVDF.
- the rear protection sheet may consist of one or more polyamide layers optionally reinforced with glass fibers, used alone or in a multilayer structure comprising a central layer of PET.
- the backing sheet may comprise aluminum foil and / or glass.
- the multilayer structure described above is integrated in the rear protective sheet of a photovoltaic module.
- it may be associated with at least one of the materials constituting the rear protection sheets described above, thus considerably improving the barrier properties of the rear protective sheet when it does not include a metal layer. (like aluminum) or glass.
- It can also contain various additives including shock modifiers, inorganic or organic pigments, dyes, optical brighteners, coupling agents, crosslinking agents, plasticizers, thermal stabilizers, stabilizers vis-à-vis hydrolysis, antioxidants (for example of the phenol and / or phosphite and / or amine type), reinforcements such as fiberglass, flame retardants, and mixtures thereof.
- the front protection sheet may then consist of glass, poly (methyl methacrylate) or PMMA, a homo- or fluorinated copolymer such as PVDF, a mixture of fluorinated polymer and PMMA or multilayer structures obtained from these materials.
- the encapsulant is generally based on at least one polymer such as an ethylene / vinyl acetate copolymer (EVA), polyvinyl butyral (PVB), ionomers, poly (methyl methacrylate) (PMMA) ), a polyurethane, a polyester, a silicone elastomer and mixtures thereof.
- the photovoltaic cells may comprise doped, mono-crystalline or polycrystalline silicon, amorphous silicon, cadmium telluride, copper-indium disilinide, or organic materials, for example.
- the manufacture of the photovoltaic module can be done according to the methods known to those skilled in the art and in particular as described in US-5, 593, 532.
- the assembly of the various layers can be done by hot pressing or vacuum , or hot rolling.
- EXAMPLE 1 Manufacture of a Multilayer Structure According to the Invention
- a precursor solution was prepared by mixing a commercial solution of PHPS (NN 120-20 (A) supplied by CLARIANT) at 20% in dibutyl ether with dibutyl ether. hexane as co-solvent, in a volume ratio of hexane to dibutyl ether of 1: 5.
- the substrate has been decontaminated with the aid of a cleaning machine.
- TEKNEK leaves before the deposition of the precursor liquid layer.
- PHPS solution was then applied on a substrate, consisting of PVDF (Kynar ® 740 from Arkema) in a thickness of 30 or 50 microns, as the case, and A4, using a Meyer bar, so as to obtain a layer of moist PHPS 4 to 6 pm thick.
- the solvent was then evaporated by free drying for a few minutes at room temperature.
- the PHPS layer obtained had a thickness of 250 nm.
- the coated substrate was then placed in an enclosure under a stream of continuous dry nitrogen, so as to obtain a hygrometry of less than 1000 ppm and an oxygen content of between 10 and 500 ppm.
- the conversion of the PHPS by irradiation was then carried out using a low-pressure mercury lamp, with VUV (185 nm) and UV (254 nm) radiation, for a duration of 5 minutes corresponding to a dose of order of 10 J / cm 2 .
- V a structure S3 obtained in a manner similar to Example 1, except that the layer of PHPS was deposited on each side (front and back) of the PVDF substrate
- VI a comparative structure S3 'corresponding to structure S3, except that the substrate consisted of PET.
- the test protocol consists in placing the sample (substrate alone or coated) at the interface of an enclosure comprising a controlled atmosphere and a continuous high vacuum measurement chamber (mass spectrometry flow measurement). The temperatures of the substrate and the atmosphere are kept constant (38 ° C) while the hygrometry (in the case of water vapor) is saturated (liquid / vapor equilibrium).
- the numerical value of the WVTR is obtained by the prior passage of a reference polymer of known WVTR (in this case, PET).
- Table 2 below also gathers the barrier properties of the structures tested, obtained in a helium permeation test.
- the measurement of the helium barrier properties is carried out with the same apparatus as previously described; in this case, the saturated water atmosphere is replaced by a dry helium atmosphere of known pressure. It has been observed that the measurement of helium permeability is a reliable tool for evaluating the water barrier properties.
- the barrier properties are expressed in terms of improvement factor, also referred to as BIF (for "Barrier Improvement Factor”), relative to the PVDF substrate alone.
- BIF Barrier Improvement Factor
- Structure S3 '8 As can be seen from Table 2, the addition of one (and more particularly two) two-layer stacks makes it possible to significantly improve the barrier properties of the substrate based on halogenated polymer.
- the symmetrical structure comprising a bilayer stack on each side of the substrate (front and back) is particularly powerful.
- the multilayer structures according to the invention have helium barrier properties significantly higher than similar structures based on PET.
- Example 3 Manufacture of Photovoltaic Modules and Evaluation of Their Resistance to Aging
- a photovoltaic mini-module was manufactured using the film of Example 1, according to the following manufacturing procedure.
- the chain of cells 1 x 2 was placed between two sheets cut to A4 size encapsulant crosslinkable EVA (VistaSolar ® Fast Cure 486.00 supplied by Solutia) having a thickness close to 400 pm before lamination.
- the resulting assembly was completed by a 3.2 mm thick glass back (FAR), cut to A4 dimensions, as well as by the structure film SI obtained in Example 1, which made front panel (FAV) function of the module.
- FAV front panel
- This assembly FAV Sl / crosslinkable EVA film / 1x2 cell chain / crosslinkable EVA film / glass was introduced, with the FAR at the bottom, into a pilot laminator S1815E of the company 3S, to proceed with the manufacture of the module, according to the cycle following lamination.
- the assembly was introduced into the laminator which was at a set temperature of 145 ° C.
- the laminator had two chambers separated by a flexible membrane.
- the module was in the lower chamber in indirect contact with the hotplate of the laminator, because the pads coming out of the heating stage supported the module, initially at a distance of about 1 cm from the plate.
- the vacuum up to less than 10 mbar
- This phase called degassing, lasted 5 minutes, during which the module began to rise in temperature.
- the actual lamination phase started and two events occurred: 1) the pads lowered and the module came into direct contact with the hot platen, and 2) the pressure in the upper chamber was brought to atmospheric pressure, while keeping the lower chamber under vacuum, so that the flexible membrane separating the two chambers came to press against the module because of the pressure difference (ie 1 bar) between the two bedrooms.
- This second phase lasted 10 minutes, after which the two chambers were put back to atmospheric pressure and the module was extracted from the laminator.
- a photovoltaic module that is ready to be characterized has been obtained.
- This photovoltaic module was placed in an aging chamber with moist heat (85 ° C, 85% humidity) for 1,000 hours and inspected after this time, looking for signs of aging or degradation.
- the photovoltaic module showed a very good behavior, without appearance of color (aunatorium), and the adhesion between the layers was preserved.
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laminated Bodies (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1252615A FR2988520B1 (fr) | 2012-03-23 | 2012-03-23 | Utilisation d'une structure multicouche a base de polymere halogene comme feuille de protection de module photovoltaique |
PCT/FR2013/050618 WO2013140101A1 (fr) | 2012-03-23 | 2013-03-22 | Utilisation d'une structure multicouche a base de polymere halogene comme feuille de protection de module photovoltaique |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2828078A1 true EP2828078A1 (fr) | 2015-01-28 |
EP2828078B1 EP2828078B1 (fr) | 2016-06-29 |
Family
ID=46852098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP13719906.3A Not-in-force EP2828078B1 (fr) | 2012-03-23 | 2013-03-22 | Utilisation d'une structure multicouche a base de polymere halogene comme feuille de protection de module photovoltaique |
Country Status (8)
Country | Link |
---|---|
US (1) | US20150047694A1 (fr) |
EP (1) | EP2828078B1 (fr) |
JP (1) | JP2015512561A (fr) |
KR (1) | KR20140144190A (fr) |
CN (1) | CN104203564B (fr) |
ES (1) | ES2593045T3 (fr) |
FR (1) | FR2988520B1 (fr) |
WO (1) | WO2013140101A1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10020185B2 (en) | 2014-10-07 | 2018-07-10 | Samsung Sdi Co., Ltd. | Composition for forming silica layer, silica layer, and electronic device |
KR101837971B1 (ko) | 2014-12-19 | 2018-03-13 | 삼성에스디아이 주식회사 | 실리카계 막 형성용 조성물, 실리카계 막, 및 전자 디바이스 |
KR101833800B1 (ko) | 2014-12-19 | 2018-03-02 | 삼성에스디아이 주식회사 | 실리카계 막 형성용 조성물, 실리카계 막의 제조방법 및 상기 실리카계 막을 포함하는 전자 소자 |
KR20170014946A (ko) | 2015-07-31 | 2017-02-08 | 삼성에스디아이 주식회사 | 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막 |
Family Cites Families (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5051308A (en) * | 1987-08-24 | 1991-09-24 | General Electric Company | Abrasion-resistant plastic articles |
US5472827A (en) * | 1991-12-30 | 1995-12-05 | Sony Corporation | Method of forming a resist pattern using an anti-reflective layer |
CA2141946A1 (fr) | 1993-06-11 | 1994-12-22 | Johann Falk | Procede et installation pour la fabrication de modules de piles photovoltaiques |
US5846649A (en) * | 1994-03-03 | 1998-12-08 | Monsanto Company | Highly durable and abrasion-resistant dielectric coatings for lenses |
US5508368A (en) * | 1994-03-03 | 1996-04-16 | Diamonex, Incorporated | Ion beam process for deposition of highly abrasion-resistant coatings |
US6335479B1 (en) * | 1998-10-13 | 2002-01-01 | Dai Nippon Printing Co., Ltd. | Protective sheet for solar battery module, method of fabricating the same and solar battery module |
EP1054456A3 (fr) * | 1999-05-17 | 2007-01-03 | Dai Nippon Printing Co., Ltd. | Couche de protection pour un module de cellules solaires, sa méthode de fabrication et module de cellules solaires |
US6379014B1 (en) * | 2000-04-27 | 2002-04-30 | N & K Technology, Inc. | Graded anti-reflective coatings for photolithography |
JP2002019001A (ja) * | 2000-07-11 | 2002-01-22 | Mitsubishi Chemicals Corp | ガスバリア性プラスチック積層体 |
US6614977B2 (en) * | 2001-07-12 | 2003-09-02 | Little Optics, Inc. | Use of deuterated gases for the vapor deposition of thin films for low-loss optical devices and waveguides |
US20030203210A1 (en) | 2002-04-30 | 2003-10-30 | Vitex Systems, Inc. | Barrier coatings and methods of making same |
JP2007510961A (ja) * | 2003-11-12 | 2007-04-26 | イグニス テヒノロギーズ アクティーゼルスカブ | 低損失酸窒化シリコン光導波路及びその製造方法及び光学装置 |
US8216684B2 (en) * | 2005-02-01 | 2012-07-10 | Mitsu Chemicals, Inc. | Method for bonding members, composite film and use thereof |
DE102005034817A1 (de) * | 2005-07-26 | 2007-02-01 | Clariant International Limited | Verfahren zur Herstellung einer dünnen glasartigen Beschichtung auf Substraten zur Verringerung der Gaspermeation |
US7553540B2 (en) * | 2005-12-30 | 2009-06-30 | E. I. Du Pont De Nemours And Company | Fluoropolymer coated films useful for photovoltaic modules |
FR2897434B1 (fr) | 2006-02-15 | 2014-07-11 | Commissariat Energie Atomique | Procede et dispositif de mesure de permeation |
JP2007296691A (ja) * | 2006-04-28 | 2007-11-15 | Konica Minolta Holdings Inc | ガスバリア性材料、ガスバリア性材料の製造方法、透明導電膜付ガスバリア性材料及び有機エレクトロルミネッセンス素子 |
US20070295387A1 (en) * | 2006-05-05 | 2007-12-27 | Nanosolar, Inc. | Solar assembly with a multi-ply barrier layer and individually encapsulated solar cells or solar cell strings |
JP2009133000A (ja) * | 2007-10-30 | 2009-06-18 | Fujifilm Corp | シリコン窒化物膜及びそれを用いたガスバリア膜、薄膜素子 |
EP2220756A1 (fr) | 2007-11-21 | 2010-08-25 | Arkema, Inc. | Module photovoltaïque utilisant un film de vitrage flexible à base de pvdf |
JP5024220B2 (ja) * | 2008-07-24 | 2012-09-12 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置、有機エレクトロルミネッセンス装置の製造方法、電子機器 |
US20120048349A1 (en) * | 2009-01-09 | 2012-03-01 | Solopower, Inc. | Flexible solar modules and manufacturing the same |
TWI488741B (zh) * | 2009-03-17 | 2015-06-21 | Lintec Corp | A molded body, a manufacturing method thereof, an electronic device member, and an electronic device |
DE102009013904A1 (de) * | 2009-03-19 | 2010-09-23 | Clariant International Limited | Solarzellen mit einer Verkapselungsschicht auf Basis von Polysilazan |
JP2011014559A (ja) * | 2009-06-30 | 2011-01-20 | Dainippon Printing Co Ltd | 太陽電池モジュール用保護フィルム及び該保護フィルムを使用した太陽電池モジュール |
IN2012DN00642A (fr) * | 2009-07-17 | 2015-08-21 | Mitsui Chemicals Inc | |
WO2011062100A1 (fr) * | 2009-11-19 | 2011-05-26 | コニカミノルタホールディングス株式会社 | Film formant barrière contre les gaz, processus pour sa production, élément organique de conversion photoélectrique et élément électroluminescent organique tous deux équipés de celui-ci |
US8754407B2 (en) * | 2009-12-14 | 2014-06-17 | Konica Minolta Holdings, Inc. | Gas barrier film, method of manufacturing gas barrier film, and organic photoelectric conversion element |
JP5267467B2 (ja) | 2010-01-12 | 2013-08-21 | コニカミノルタ株式会社 | バリアフィルム、バリアフィルムの製造方法、バリアフィルムを有する有機光電変換素子及び該素子を有する太陽電池 |
WO2011086839A1 (fr) * | 2010-01-12 | 2011-07-21 | コニカミノルタホールディングス株式会社 | Film barrière aux gaz, procédé pour la production d'un film barrière aux gaz, élément de conversion photoélectrique organique qui comprend un film barrière aux gaz et photopile qui comprend l'élément |
JP5381734B2 (ja) * | 2010-01-14 | 2014-01-08 | コニカミノルタ株式会社 | バリア性フィルム及び有機電子デバイス |
US9013018B2 (en) * | 2010-02-18 | 2015-04-21 | Beneq Oy | Multilayer moisture barrier |
JP5515847B2 (ja) | 2010-02-24 | 2014-06-11 | コニカミノルタ株式会社 | ガスバリアフィルムの製造方法 |
JP2012000828A (ja) * | 2010-06-16 | 2012-01-05 | Konica Minolta Holdings Inc | ガスバリア性部材、ガスバリア性部材の製造方法及び該ガスバリア性部材を有する有機光電変換素子 |
US8618408B2 (en) | 2010-06-28 | 2013-12-31 | Miasole | Protective layers for a glass barrier in a photovoltaic device |
KR20120008360A (ko) * | 2010-07-16 | 2012-01-30 | 삼성모바일디스플레이주식회사 | 플렉서블 디스플레이용 기판 및 그 제조 방법 |
WO2012011377A1 (fr) * | 2010-07-22 | 2012-01-26 | コニカミノルタホールディングス株式会社 | Procédé de production d'un film barrière contre un gaz |
KR101461346B1 (ko) * | 2010-07-27 | 2014-11-14 | 코니카 미놀타 가부시키가이샤 | 가스 배리어성 필름, 가스 배리어성 필름의 제조 방법 및 전자 디바이스 |
JP5749344B2 (ja) * | 2011-09-08 | 2015-07-15 | リンテック株式会社 | 変性ポリシラザンフィルム、および、ガスバリアフィルムの製造方法 |
FR2980394B1 (fr) * | 2011-09-26 | 2013-10-18 | Commissariat Energie Atomique | Structure multicouche offrant une etancheite aux gaz amelioree |
JP5835344B2 (ja) * | 2011-11-24 | 2015-12-24 | コニカミノルタ株式会社 | ガスバリアーフィルム及び電子機器 |
US20140117511A1 (en) * | 2012-10-30 | 2014-05-01 | Infineon Technologies Ag | Passivation Layer and Method of Making a Passivation Layer |
-
2012
- 2012-03-23 FR FR1252615A patent/FR2988520B1/fr active Active
-
2013
- 2013-03-22 ES ES13719906.3T patent/ES2593045T3/es active Active
- 2013-03-22 EP EP13719906.3A patent/EP2828078B1/fr not_active Not-in-force
- 2013-03-22 US US14/386,056 patent/US20150047694A1/en not_active Abandoned
- 2013-03-22 CN CN201380015995.2A patent/CN104203564B/zh not_active Expired - Fee Related
- 2013-03-22 WO PCT/FR2013/050618 patent/WO2013140101A1/fr active Application Filing
- 2013-03-22 JP JP2015500970A patent/JP2015512561A/ja active Pending
- 2013-03-22 KR KR1020147026497A patent/KR20140144190A/ko not_active Application Discontinuation
Non-Patent Citations (1)
Title |
---|
See references of WO2013140101A1 * |
Also Published As
Publication number | Publication date |
---|---|
CN104203564B (zh) | 2016-08-24 |
JP2015512561A (ja) | 2015-04-27 |
US20150047694A1 (en) | 2015-02-19 |
ES2593045T3 (es) | 2016-12-05 |
FR2988520B1 (fr) | 2014-03-14 |
CN104203564A (zh) | 2014-12-10 |
EP2828078B1 (fr) | 2016-06-29 |
WO2013140101A1 (fr) | 2013-09-26 |
FR2988520A1 (fr) | 2013-09-27 |
KR20140144190A (ko) | 2014-12-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10693024B2 (en) | Barrier assembly | |
EP2882591B1 (fr) | Film barrière, procédé de fabrication du film de barrière, et articles comprenant le film de barrière | |
US8754407B2 (en) | Gas barrier film, method of manufacturing gas barrier film, and organic photoelectric conversion element | |
US20120227809A1 (en) | Flexible assembly and method of making and using the same | |
CN103650160B (zh) | 太阳能电池用保护板,其制造方法,太阳能电池用背板以及太阳能电池模块 | |
EP2828078B1 (fr) | Utilisation d'une structure multicouche a base de polymere halogene comme feuille de protection de module photovoltaique | |
EP2673809B1 (fr) | Film bi-couches d'un module photovoltaïque | |
US20110129676A1 (en) | Multi-layered front sheet encapsulant for photovoltaic modules | |
WO2012049397A1 (fr) | Film a base de polymere fluore pour application photovoltaïque | |
JP2016528724A (ja) | 封止材への改善された接着を有するバックシート/フロントシート、及びそれから作製される太陽電池モジュール | |
EP2700103B1 (fr) | Film bi-couches d'un module photovoltaique | |
EP3157999A1 (fr) | Encapsulant d'un module photovoltaïque | |
JP2001007368A (ja) | 太陽電池モジュ−ル用保護シ−トおよびそれを使用した太陽電池モジュ−ル | |
JP2000307136A (ja) | 太陽電池のカバーフィルム | |
FR3104059A1 (fr) | Empilement hautement barriere aux gaz notamment pour cellules photovoltaiques |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20140918 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
AX | Request for extension of the european patent |
Extension state: BA ME |
|
DAX | Request for extension of the european patent (deleted) | ||
17Q | First examination report despatched |
Effective date: 20151215 |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
INTG | Intention to grant announced |
Effective date: 20160407 |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: BONNET, ANTHONY Inventor name: HIDALGO, MANUEL Inventor name: CROS, STEPHANE |
|
GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D Free format text: NOT ENGLISH |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: EP |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: REF Ref document number: 808758 Country of ref document: AT Kind code of ref document: T Effective date: 20160715 |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: FG4D Free format text: LANGUAGE OF EP DOCUMENT: FRENCH |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R096 Ref document number: 602013008941 Country of ref document: DE |
|
REG | Reference to a national code |
Ref country code: NL Ref legal event code: FP |
|
REG | Reference to a national code |
Ref country code: LT Ref legal event code: MG4D |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160629 Ref country code: FI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160629 |
|
REG | Reference to a national code |
Ref country code: NO Ref legal event code: T2 Effective date: 20160629 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160930 Ref country code: RS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160629 Ref country code: SE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160629 Ref country code: HR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160629 Ref country code: LV Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160629 |
|
REG | Reference to a national code |
Ref country code: ES Ref legal event code: FG2A Ref document number: 2593045 Country of ref document: ES Kind code of ref document: T3 Effective date: 20161205 |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: MK05 Ref document number: 808758 Country of ref document: AT Kind code of ref document: T Effective date: 20160629 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: EE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160629 Ref country code: RO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160629 Ref country code: IS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20161029 Ref country code: CZ Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160629 Ref country code: SK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160629 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 5 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: PL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160629 Ref country code: SM Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160629 Ref country code: PT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20161031 Ref country code: AT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160629 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R097 Ref document number: 602013008941 Country of ref document: DE |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160629 |
|
26N | No opposition filed |
Effective date: 20170330 |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160629 Ref country code: BG Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160929 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: MC Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160629 |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: MM4A |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LU Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20170322 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 6 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20170322 |
|
REG | Reference to a national code |
Ref country code: BE Ref legal event code: MM Effective date: 20170331 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20170331 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: MT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160629 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: AL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160629 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: HU Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO Effective date: 20130322 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: CY Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160629 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: MK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160629 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: TR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20160629 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 20200310 Year of fee payment: 8 Ref country code: NO Payment date: 20200310 Year of fee payment: 8 Ref country code: IT Payment date: 20200221 Year of fee payment: 8 Ref country code: GB Payment date: 20200311 Year of fee payment: 8 Ref country code: NL Payment date: 20200312 Year of fee payment: 8 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: CH Payment date: 20200313 Year of fee payment: 8 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: ES Payment date: 20200401 Year of fee payment: 8 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: FR Payment date: 20210210 Year of fee payment: 9 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R119 Ref document number: 602013008941 Country of ref document: DE |
|
REG | Reference to a national code |
Ref country code: NO Ref legal event code: MMEP |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: PL |
|
REG | Reference to a national code |
Ref country code: NL Ref legal event code: MM Effective date: 20210401 |
|
GBPC | Gb: european patent ceased through non-payment of renewal fee |
Effective date: 20210322 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: NO Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20210331 Ref country code: NL Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20210401 Ref country code: CH Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20210331 Ref country code: LI Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20210331 Ref country code: DE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20211001 Ref country code: GB Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20210322 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20210322 |
|
REG | Reference to a national code |
Ref country code: ES Ref legal event code: FD2A Effective date: 20220701 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: ES Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20210323 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FR Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20220331 |