EP2819173B1 - Method of manufacturing an organic light-emitting display device - Google Patents

Method of manufacturing an organic light-emitting display device Download PDF

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Publication number
EP2819173B1
EP2819173B1 EP14162509.5A EP14162509A EP2819173B1 EP 2819173 B1 EP2819173 B1 EP 2819173B1 EP 14162509 A EP14162509 A EP 14162509A EP 2819173 B1 EP2819173 B1 EP 2819173B1
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EP
European Patent Office
Prior art keywords
layer
pixel
pixel electrode
hydrophobic material
defining layer
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EP14162509.5A
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German (de)
English (en)
French (fr)
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EP2819173A1 (en
Inventor
Ki-Wan Ahn
Jae-Hyuk Jang
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Samsung Display Co Ltd
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Samsung Display Co Ltd
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Priority to EP21208854.6A priority Critical patent/EP3979328A1/en
Publication of EP2819173A1 publication Critical patent/EP2819173A1/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/851—Division of substrate

Definitions

  • the present invention relates to a method of manufacturing an organic light-emitting display device having low interfacial resistance between a pixel electrode and an intermediate layer.
  • organic light-emitting display devices have been identified as next generation display devices, due to their superior characteristics such as wide viewing angles, excellent contrast, and short response times.
  • an organic light-emitting display device includes a structure having a pixel-defining layer covering edges of a pixel electrode and exposing a central portion of the pixel electrode. After the pixel-defining layer has been formed, an intermediate layer including an emission layer is formed on the pixel electrode using methods such as inkjet printing or nozzle printing.
  • an ink residue may be formed on the surfaces of the pixel-defining layer and the pixel electrode.
  • the ink residue may weaken the adhesion between layers subsequently deposited on the pixel-defining layer and pixel electrode.
  • the pixel-defining layer may include a material having a hydrophobic property, which gives the pixel-defining layer a liquid-repellent characteristic.
  • the hydrophobic material may also render the surface of the pixel electrode hydrophobic, which may cause the interfacial resistance between the pixel electrode and the intermediate layer to increase. Accordingly, the increased resistance may lead to deterioration in the efficiency of the organic light-emitting display device.
  • EP 2 221 899 A1 , US 2005/112341 A1 , US 2009/115318 A1 , US 2007/077349 A1 and EP 2 254 394 A1 disclose methods of manufacturing a display.
  • EP 2 254 394 A1 discloses a technique which easily forms a bank the inner lateral surface of which has a part (lower part of the inner lateral surface) made to be lyophilic.
  • the present disclosure is directed to address at least the above problems relating to the interfacial resistance and efficiency of organic light-emitting display devices.
  • FIGs. 1 through 5 illustrate cross sectional views of an organic light-emitting display device at different stages of fabrication according to a first method of manufacturing the organic light-emitting display device.
  • a pixel electrode 10 is formed on a substrate (not shown).
  • a hydrophobic material layer 20' including a hydrophobic material is formed covering the pixel electrode 10.
  • the hydrophobic material may include fluorine (F).
  • the pixel electrode 10 may include a transparent electrode or a reflective electrode.
  • the transparent electrode may include a layer formed of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or In 2 O 3 .
  • the reflective electrode may include a reflection layer formed of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or a blend thereof.
  • the reflective electrode may also include a layer formed of ITO, IZO, ZnO, or In 2 O 3 .
  • the hydrophobic material layer 20' may correspond to a state prior to patterning (i.e. before the hydrophobic material layer 20' is patterned to form a pixel-defining layer 20).
  • the hydrophobic material layer 20' may include a layer consisting of a hydrophobic material.
  • the hydrophobic material layer 20' may include a layer comprising a hydrophobic material in an organic insulating layer.
  • the organic insulating layer may include an acryl-based polymer (such as polymethylmethacrylate (PMMA)), polystyrene (PS), a polymer derivative having a phenol group, imide-based polymer, aryl ether-based polymer, amide-based polymer, fluorine-based polymer, p-xylene-based polymer, vinyl alcohol-based polymer, or a blend thereof.
  • PMMA polymethylmethacrylate
  • PS polystyrene
  • the pixel-defining layer 20 is formed by etching an opening in the hydrophobic material layer 20'.
  • the pixel-defining layer 20 is formed such that at least a portion of the pixel electrode 10 (including a central portion of the pixel electrode 10) is exposed after the patterning of the hydrophobic material layer 20'.
  • fluorine (F) groups are present on a top surface of the hydrophobic material layer 20'.
  • fluorine (F) groups are also present on the exposed surface of the pixel electrode 10, in addition to being present on the exposed surface of the pixel-defining layer 20, as illustrated in FIG. 2 .
  • a photoresist (PR) layer 30 is formed on a portion of the pixel-defining layer 20.
  • the photoresist layer 30 may be formed on an upper surface of the pixel-defining layer 20, so as to preserve the hydrophobicity of the upper surface of the pixel-defining layer 20 during the subsequent surface treatment described below with reference to FIG. 4 .
  • the structure in FIG. 3 undergoes surface treatment (denoted by the downward pointing arrows), so as to remove the fluorine (F) groups on the exposed surface of the pixel electrode 10.
  • the surface treatment may include plasma cleaning methods, ultraviolet (UV) irradiation, or other known surface treatment methods.
  • the upper surface of the pixel-defining layer 20 is protected by the photoresist layer 30. As a result, the upper surface of the pixel-defining layer 20 is unaffected by the surface treatment.
  • the photoresist layer 30 is removed, so as to expose the upper surface of the pixel-defining layer 20.
  • the upper surface of the pixel-defining layer 20 maintains its original hydrophobicity, with the fluorine (F) groups remaining intact on the upper surface of the pixel-defining layer 20.
  • fluorine (F) groups remaining intact on the exposed surface of the pixel electrode 10 after the surface treatment.
  • the sloped surface in the opening of the pixel-defining layer 20 is exposed and therefore subject to the surface treatment.
  • the surface treatment may be less effective on the sloped surface compared to a horizontal exposed surface.
  • some fluorine (F) groups may remain on the sloped surface of the pixel-defining layer 20 after the surface treatment.
  • the sloped surface of the pixel-defining layer 20 may have weaker hydrophobicity compared to the upper surface of the pixel-defining layer 20 (that was previously protected by the photoresist layer 30).
  • the upper surface and the sloped surface of the pixel-defining layer 20 may have varying degrees of hydrophobicity, as illustrated in FIG. 5 . Nevertheless, it is noted that in some cases, the sloped surface of the pixel-defining layer 20 may completely lose their hydrophobicity after the surface treatment. For example, the loss in hydrophobicity may be a function of the angle of the sloped surface and the type (and conditions) of surface treatment used.
  • the hydrophobic nature of the upper surface of the pixel-defining layer 20 prevents an ink residue from forming on the upper surface of the pixel-defining layer 20 during subsequent formation of an intermediate layer (not shown).
  • the intermediate layer may be formed, for example, using an inkjet printing method.
  • the interfacial resistance between the pixel electrode 10 and the intermediate layer may increase if the surface of the pixel electrode 10 is hydrophobic.
  • the hydrophobicity of the pixel electrode 10 is removed by the surface treatment. Accordingly, a low interfacial resistance between the pixel electrode 10 and the intermediate layer may be achieved using the structure of FIG. 5 and the first exemplary method described above. Accordingly, the efficiency of the organic light-emitting display device can be maintained.
  • a photoresist layer 30 is formed on a surface of the structure in FIG. 1 . Specifically, the photoresist layer 30 is formed on the surface of the hydrophobic material layer 20'.
  • the hydrophobic material layer 20' and the photoresist layer 30 are simultaneously patterned to obtain the structure illustrated in FIG. 3 .
  • the pixel electrode 10 (including a central portion of the pixel electrode 10) is exposed after the patterning of the hydrophobic material layer 20'.
  • fluorine (F) groups (providing hydrophobicity) are present on the exposed surface of the pixel electrode 10 and the surface of the pixel-defining layer 20.
  • the (patterned) photoresist layer 30 may be formed covering an upper surface of the pixel-defining layer 20, so as to preserve the hydrophobicity of the upper surface of the pixel-defining layer 20 during the subsequent surface treatment of the pixel electrode 10.
  • the fluorine (F) groups on the exposed surface of the pixel electrode 10 are removed by the surface treatment which includes plasma cleaning methods, ultraviolet (UV) irradiation, or other known surface treatment methods.
  • the (patterned) photoresist layer 30 is removed, so as to expose the upper surface of the pixel-defining layer 20.
  • the upper surface of the pixel-defining layer 20 maintains its original hydrophobicity, with the fluorine (F) groups remaining intact on the upper surface of the pixel-defining layer 20.
  • fluorine (F) groups remaining intact on the exposed surface of the pixel electrode 10 after the surface treatment.
  • the hydrophobic nature of the upper surface of the pixel-defining layer 20 prevents an ink residue from forming on the upper surface of the pixel-defining layer 20 during subsequent formation of an intermediate layer. If the surface of the pixel electrode 10 is hydrophobic, the interfacial resistance between the pixel electrode 10 and the intermediate layer may increase. However, in the embodiment of FIG. 5 , the hydrophobicity of the pixel electrode 10 is removed by the surface treatment. Accordingly, a low interfacial resistance between the pixel electrode 10 and the intermediate layer may be achieved using the structure of FIG. 5 and the second exemplary method described above. Accordingly, the efficiency of the organic light-emitting display device can be maintained.
  • FIGs. 7 through 9 illustrate cross sectional views of another organic light-emitting display device at different stages of fabrication according to a method of manufacturing an organic light-emitting display device, which method does not form part of the present invention.
  • the organic light-emitting display device depicted in FIGs. 7-9 includes elements similar to those in FIGs. 1-6 .
  • Like reference numerals are assigned to like constituent elements of the aforementioned embodiments and thus, detailed description of those elements shall be omitted.
  • a pixel electrode 10 is formed on a substrate (not shown) and a photoresist layer 30 is then formed on the pixel electrode 10.
  • a hydrophobic material layer 20' including a hydrophobic material is formed covering the pixel electrode 10 and the photoresist layer 30.
  • the hydrophobic material may include fluorine (F).
  • the hydrophobic material layer 20' is patterned so as to expose at least a central portion of the pixel electrode 10.
  • the central portion of the pixel electrode 10 may be exposed by patterning the hydrophobic material layer 20' to form a pixel-defining layer 20 in a first process step ( FIG. 8 ), followed by the patterning of the photoresist layer 30 in a second process step ( FIG. 9 ).
  • the photoresist layer 30 is disposed in an opening of the pixel-defining layer 20 after the first process step.
  • the first and second process steps may be combined into a single process step (i.e. the hydrophobic material layer 20' and the photoresist layer 30 in FIG. 7 may be simultaneously patterned/etched to form the structure in FIG. 9 ).
  • fluorine (F) groups are present on the upper surface of the pixel-defining layer 20 and the sloped surface 20a in the opening of the pixel-defining layer 20. Accordingly, the upper surface and sloped surface 20a of the pixel-defining layer 20 are hydrophobic. Conversely, fluorine (F) groups are absent from the exposed surface of the pixel electrode 10 and the sloped surface 30a in the opening of the photoresist layer 30. Accordingly, the exposed surface of the pixel electrode 10 and the sloped surface 30a of the photoresist layer 30 are non-hydrophobic.
  • the sloped surfaces 20a and 30a may be aligned on a common plane, and that the sloped surfaces 20a and 30a may have varying degrees of hydrophobicity depending on the number of fluorine (F) groups present on each sloped surface.
  • the upper surface and sloped surface 20a of the pixel-defining layer 20 may have different degrees of hydrophobicity.
  • the upper surface of the pixel-defining layer 20 may be more hydrophobic than the sloped surface 20a.
  • the hydrophobic nature of the surface of the pixel-defining layer 20 prevents an ink residue from forming on the surface of the pixel-defining layer 20 during subsequent formation of an intermediate layer (not shown).
  • the intermediate layer may be formed, for example, using an inkjet printing method.
  • the interfacial resistance between the pixel electrode 10 and the intermediate layer may increase if the surface of the pixel electrode 10 is hydrophobic.
  • the exposed surface of the pixel electrode 10 is non-hydrophobic. Accordingly, a low interfacial resistance between the pixel electrode 10 and the intermediate layer may be achieved using the structure of FIG. 9 and the above-described method. Accordingly, the efficiency of the organic light-emitting display device can be maintained.
  • FIG. 10 illustrates a cross sectional view of an organic light-emitting display device.
  • the organic light-emitting display device of FIG. 10 includes elements similar to those in FIGs. 1-9 .
  • Like reference numerals are assigned to like constituent elements of the aforementioned embodiments and thus, detailed description of those elements shall be omitted.
  • the organic light-emitting display device includes various elements disposed on a substrate 100.
  • the substrate 100 may include a transparent material, such as glass, plastic, or a transparent metallic material.
  • the various elements in the organic light-emitting display device are described as follows.
  • a buffer layer 102 is disposed on the substrate 100.
  • a semiconductor layer 103 is disposed on a portion of the buffer layer 102.
  • a gate insulating layer 104 is disposed on the buffer layer 102 and the semiconductor layer 103.
  • a gate electrode 105 is disposed on the gate insulating layer 104 directly above the semiconductor layer 103.
  • An interlayer insulating layer 108 is disposed on the gate insulating layer 104 and the gate electrode 105.
  • a source electrode 106 and a drain electrode 107 are formed by etching vias in the gate insulating layer 104 and interlayer insulating layer 108 to expose portions of the semiconductor layer 103, and filling the vias with conductive material.
  • the semiconductor layer 103, gate electrode 105, source electrode 106, and drain electrode 107 collectively constitute a thin film transistor (TFT).
  • a protection layer 110 is disposed on the interlayer insulating layer 108 and source/drain electrodes 106/107.
  • a planarization layer 112 is disposed on the protection layer 110 to provide a top planar surface.
  • OLED organic light-emitting device
  • the OLED includes a pixel electrode 10, a pixel-defining layer 20, an intermediate layer 40, and a counter electrode 50.
  • the pixel electrode 10 is electrically connected to the TFT through a via etched in the planarization layer 112 and protection layer 110. As shown in FIG. 10 , the pixel electrode 10 is disposed on a portion of the planarization layer 112 and formed by filling the via with a conductive material, such that the pixel electrode 10 makes contact with the drain electrode 107.
  • the pixel-defining layer 20 is disposed on the planarization layer 112 and pixel electrode 10, and includes an opening defining a pixel region of the pixel electrode 10. The size of the opening in the pixel-defining layer 20 may be less than the size of the pixel electrode 10, such that edge portions of the pixel electrode 10 may be covered by the pixel-defining layer 20 (see FIG. 10 ).
  • the intermediate layer 40 is disposed on the pixel electrode 10 within the opening of the pixel-defining layer 20.
  • the intermediate layer 40 may include an emission layer, and may be formed, for example, using an inkjet printing method.
  • the counter electrode 50 is disposed on the pixel-defining layer 20 and intermediate layer 40, over an area substantially covering the entire surface of the substrate 100.
  • the intermediate layer 40 may include multiple layers. In some other embodiments, the intermediate layer 40 may consist of a single layer. In some further embodiments, the intermediate layer 40 may be formed having a width corresponding to that of the pixel electrode 10.
  • the organic light-emitting display device may include the embodiments illustrated in FIGs. 5 and 9 .
  • the surface of the pixel electrode 10 (that is in contact with the intermediate layer 40) may be rendered non-hydrophobic, and the surface of the pixel-defining layer 20 may be rendered hydrophobic, using the methods described in FIGs. 1 through 9 .
  • the hydrophobic nature of the surface of the pixel-defining layer 20 prevents an ink residue from forming on the surface of the pixel-defining layer 20 during formation of the intermediate layer 40. If the surface of the pixel electrode 10 is hydrophobic, the interfacial resistance between the pixel electrode 10 and the intermediate layer may increase.
  • FIG. 10 the embodiment of FIG.
  • the hydrophobicity of the pixel electrode 10 may be removed by the surface treatment methods previously described. Accordingly, a low interfacial resistance between the pixel electrode 10 and the intermediate layer 40 may be achieved using the structure of FIG. 10 . Accordingly, the efficiency of the organic light-emitting display device can be maintained.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
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EP14162509.5A 2013-06-26 2014-03-28 Method of manufacturing an organic light-emitting display device Active EP2819173B1 (en)

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KR1020130073972A KR102114314B1 (ko) 2013-06-26 2013-06-26 유기발광 디스플레이 장치 및 그 제조방법

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EP3979328A1 (en) 2022-04-06
US20150001473A1 (en) 2015-01-01
CN104253244B (zh) 2019-06-28
US9450211B2 (en) 2016-09-20
US10347869B2 (en) 2019-07-09
CN104253244A (zh) 2014-12-31
EP2819173A1 (en) 2014-12-31
US20170005294A1 (en) 2017-01-05

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