EP2797853A1 - Procédé de production de substrats dcb - Google Patents

Procédé de production de substrats dcb

Info

Publication number
EP2797853A1
EP2797853A1 EP12821253.7A EP12821253A EP2797853A1 EP 2797853 A1 EP2797853 A1 EP 2797853A1 EP 12821253 A EP12821253 A EP 12821253A EP 2797853 A1 EP2797853 A1 EP 2797853A1
Authority
EP
European Patent Office
Prior art keywords
layer
copper
ceramic layer
ceramic
surface side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12821253.7A
Other languages
German (de)
English (en)
Inventor
Jürgen SCHULZ-HARDER
Karsten Schmidt
Karl Exel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rogers Germany GmbH
Original Assignee
Curamik Electronics GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Curamik Electronics GmbH filed Critical Curamik Electronics GmbH
Publication of EP2797853A1 publication Critical patent/EP2797853A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/025—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of glass or ceramic material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/103—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by bonding or embedding conductive wires or strips
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/04—Ceramic interlayers
    • C04B2237/06—Oxidic interlayers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/04—Ceramic interlayers
    • C04B2237/06—Oxidic interlayers
    • C04B2237/064—Oxidic interlayers based on alumina or aluminates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/04—Ceramic interlayers
    • C04B2237/09—Ceramic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/124—Metallic interlayers based on copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/366—Aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/402—Aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/52—Pre-treatment of the joining surfaces, e.g. cleaning, machining
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/54—Oxidising the surface before joining
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/72—Forming laminates or joined articles comprising at least two interlayers directly next to each other
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/86—Joining of two substrates at their largest surfaces, one surface being complete joined and covered, the other surface not, e.g. a small plate joined at it's largest surface on top of a larger plate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/30—Foil or other thin sheet-metal making or treating
    • Y10T29/301—Method
    • Y10T29/302—Clad or other composite foil or thin metal making

Definitions

  • the invention relates to a method for the manufacture len of DCB substrates, in particular in the form of printed circuit boards for electrical circuits and / or modules, according to the preamble of claim 1. Methods of this kind are known.
  • DCB process Direct Copper Bond Technology
  • metal ltiken or sheets eg copper sheets or - fol ies
  • metal sheets or films especially those of copper or copper alloys, on their surface sides a layer or coating of a chemical
  • this layer or coating forms together with the adjacent metal l a eutectic (reflow) with a melting temperature below the melting temperature of the metal ls (for example, copper), so that by placing the film on the ceramic and heating all ichl layers can be connected to each other, through
  • This DCB method then indicates e.g. the following process steps:
  • Oxidizing a metal foil e.g. Kupferfol ie such that there is a uniform metal or copper oxide layer;
  • metal foil for example copper foil
  • DCB bonding Substrates prepared by this method (hereinafter also referred to as “DCB bonding") are hereinafter referred to as "DCB substrates", regardless of the metal I used for the metal layers or foils.
  • DCB substrates When using aluminum nitride (AIN) ceramic layers, it is also known to produce an intermediate layer of aluminum oxide (Al 2 O 3) on at least one surface side of the respective ceramic layer, first by thermal oxidation in air or in an oxygen-containing atmosphere. Only via this intermediate layer is it then possible to connect the metallization forming the corresponding metal foil, for example copper foil, by DCB bonding with the ceramic.
  • Al 2 O 3 aluminum oxide
  • the object of the invention is to provide a method by which DCB substrates with at least one ceramic layer consisting essentially of aluminum nitride with improved quality, in particular with improved mechanical and / or electrical and / or thermal properties, can be produced.
  • a method according to claim 1 is formed.
  • an essential feature of the method according to the invention is that the particular ceramic layer used, which consists essentially of aluminum nitride (AIN), for example, with an aluminum nitride content of at least 90%, preferably with an aluminum nitride content of at least 96%, with further constituents including sintering aids such as yttria Y203), calcium oxide (CaO), magnesium oxide (MgO) and release agents such as boron nitride (BN) and reaction products such as garnet (Y203 " Al203), and boron oxide (B203), prior to producing the at least one intermediate layer of alumina (AI203) is mechanically and / or chemically cleaned on the relevant surface side, ie a surface layer existing therefrom which results from the sintering process and contains, inter alia, reaction processes from the sintering process is developed in a further development of the invention.
  • AIN aluminum nitride
  • the removal of the surface layer, in particular also of the surface layer containing an oxidic ceramic takes place mechanically, for example by brushing, grinding, lapping, sandblasting, pressure blasting,
  • the removal of the surface layer takes place by chemical treatment, for example by treatment with an alkaline solution, preferably with an aqueous solution having a pH greater than 10, preferably with a pH greater than 12,
  • a treatment temperature in the range between 20 ° C and 100 ° C, preferably at a temperature greater than 50 ° C,
  • KOH Potassium hydroxide
  • Na2C03 sodium carbonate
  • the removal of the surface layer takes place thermally in liquid and / or vapor, for example by treatment under pressure in an autoclave
  • a thin layer of copper or copper oxide or of at least one other copper-containing compound is applied to the ceramic layer on at least one surface side prior to the production of the at least one intermediate layer, and that subsequently the at least one intermediate layer is produced by thermal oxidation,
  • the application of the thin layer of copper or copper oxide or of the at least one copper-containing compound is effected by immersing the ceramic layer in an aqueous copper ion-containing solution, for example in an aqueous solution with 0.005 to 2.0 mol / ICu + + ion content,
  • the application of the thin layer of copper or of copper oxide or of the at least one other copper-containing compound takes place by sputtering and / or by CVD deposition and / or by chemical deposition, and or
  • the at least one intermediate layer by thermal oxidation, i. by heating the ceramic layer to a temperature in the range between 800 ° C and 1 450 ° C in air or in an oxygen-containing atmosphere with an oxygen content between 10% and 90%,
  • the method comprises the following method steps:
  • the method comprises the following method steps:
  • a are made of a ceramic layer, that on at least one surface side of the ceramic layer, the intermediate layer is produced and then the pre-oxidized metal layer or metal foil is connected by DCB bonding, that before generating the at least one intermediate layer on the respective surface side of the ceramic layer there existing, from the Sintering process resulting surface layer is removed, and then that the intermediate layer is generated,
  • Figure 1 is a DCB substrate with an insulating or ceramic layer of aluminum nitride (AIN) in section.
  • AIN aluminum nitride
  • FIG. 3 shows an enlarged view of the ceramic layer of aluminum nitride together with an intermediate layer applied to this ceramic layer essentially consisting of aluminum oxide (Al 2 O 3) in the method of FIG.
  • Substrates of Figure 1 in a further embodiment of the invention 5 shows an enlarged view of the ceramic layer of aluminum nitride together with an intermediate layer applied to this ceramic layer essentially consisting of aluminum oxide (Al 2 O 3) in the method of FIG. 4.
  • FIG. 1, 1 is a metal-ceramic substrate or a DCB substrate which is in the
  • Substantially consists of a ceramic layer 2 of protective or intermediate layers 3, each of which is located on a surface side of the ceramic layer 2, as well as metallizations 4 and 5, which are each applied to one of the intermediate layers 3 and of which the metal isation 3 for forming of metal areas 3.1, for example in the form of
  • Conductor tracks, contact surfaces, mounting surfaces, etc. is structured.
  • the ceramic layer 2 is one made of aluminum nitride (AIN), for example, with a content of aluminum nitride (AIN) of at least 90% by weight, preferably with a content of aluminum nitride (AIN) of about 96% by weight, the remainder each being further additives or substantially other additives, in particular sintering aids, such as
  • yttria Y203
  • ceria CaO
  • barium oxide B203
  • barium nitride BN
  • calcium oxide CaO
  • the intermediate layers 3 are also ceramic layers and consist of aluminum oxide (AI302) with a small proportion of other constituents, in particular
  • Sintering aids for example with a small proportion of yttrium oxide (Y203),
  • the metallizations 4 and 5 are layers or foils of copper, of a copper alloy, or of aluminum or an aluminum alloy.
  • the basic process steps for producing the substrate 1 are shown in FIG. 2 in the local positions a) -f).
  • the ceramic layer 2 of aluminum nitride is first provided, by casting and / or calendering and / or pressing a crumb foil 2.1 made of aluminum nitride (AIN) with the sintering aids and by subsequent sintering of the respective green sheet 2.1, also in the stack with further Crünfolien at the required sintering temperature, for example at a temperature in the range between 1 600 ° C and 1 900 ° C.
  • the green ceramic layer 2.2 (ceramic layer as-fired) is obtained according to the position b).
  • This raw ceramic layer 2.2 has, in particular, surface layers 6 originating from the sintering process, for example with a thickness in the range between 0.05 mm and 0.3 mm.
  • the surface layers 6 consist essentially of
  • Impurities and components or compounds of the sintering aids and release agents such.
  • the intermediate layers 3 e.g. by thermal oxidation.
  • the ceramic layer 2 in air or in an oxygen-containing atmosphere, for example in an atmosphere containing inert gas, for example nitrogen, argon, etc., and oxygen in a proportion of 10% - 90%, to a temperature in the range between 800 ° C heated to 1450 ° C.
  • the intermediate layers 3 likewise contain constituents (3.1) or reaction products of the sintering aids, for example Y 2 O 3, BN, B 2 O 3 etc. (FIGS. 3 and 5)
  • the pre-oxidized metal layers or metal foils are respectively placed on an intermediate layer 3 and then subsequently connected by DCB bonding with the intermediate layers 3 and via the with the ceramic layer 2.
  • the DCB bonding is performed by heating the assembly formed by the metal foils or layers and the ceramic layer 2 with the intermediate layers 3 to the DCB temperature in the range between
  • the structuring of at least the metallization 4 takes place in accordance with the position f) to form the metal regions 4.1, which are also electrically separated from one another, using a suitable and known masking and etching method.
  • This structuring can be omitted if the metallizations 4 and 5 and in particular the metallization 4 already pre-structured on with the
  • removing the surface layers 6, in particular a mechanical and / or material-removing treatment and / or a chemical treatment for example a chemical treatment with a suitable aqueous solution or alkali, preferably with an aqueous alkaline solution having a pH greater oil or preferably greater than 12, for example by immersing the
  • sodium hydroxide solution NaOH
  • a 5% sodium hydroxide solution are suitable as the treatment solution.
  • other alkaline treatment solutions for example KOH, Na 2 CO 3, are also suitable for the treatment.
  • the treatment is preferably carried out at a temperature in the range between 20 ° C and 100 ° C, preferably at a temperature greater than 50 ° C.
  • Another possibility is a treatment with the solutions mentioned under pressure in an autoclave to 300 ° C.
  • a mechanical treatment removing the material of the surface layers 6 is also possible, for example removal of the surface layers 6 by brushing and / or grinding and / or lapping, sand blasting, pressure blasting, etc.
  • Treatment before the chemical treatment or following the chemical treatment are mechanical treatment and chemical treatment carried out at least partially overlapping in time.
  • connection of the metallizations 4 and 5 with the ceramic and in terms of electrical properties can be achieved when in the intermediate layer 3 copper or copper oxide or copper ions are incorporated. It has been shown that 3 discontinuities 7 form without incorporation of copper or copper oxide or copper ions in the intermediate layers, in which the respective intermediate layer 3 is not completely formed or interrupted.
  • discontinuities 7 i. in particular the pores and interruptions, lead to the fact that in the region of discontinuities 7 no DCB connection between the ceramic and the respective metallization 4 or 5 comes about, ie below the respective
  • Metallization 4 and 5 bubbles or cavities form. Through these bubbles or voids u.a. not only the mechanical strength of the connection between the metallizations 4 and 5 and the ceramic, but in particular the dielectric strength of the substrate 1 between the metallizations 4 and 5 significantly affected.
  • the discontinuities 7 and the associated disadvantages are effectively avoided (FIG. 5).
  • FIG. 4 shows in the positions a-f the essential steps a method in which, after the provision of the ceramic ceramics 2.1 (position a), after the sintering and cleaning of the raw ceramics 2.2 (Positions b and c) on both surface sides of the cleaned, ie freed from the surface layers 6 ceramic layer 2 is applied in each case a thin layer 8 of copper or a copper-containing compound, as shown in Figure 4 in the position c) subsequent Position c) 'is indicated. Following this, in turn, according to position d), the two intermediate layers 3 having the desired thicknesses are produced by thermal oxidation in an oxygen-containing atmosphere.
  • the intermediate layers 3 are set to a layer thickness between about 0.5 // m and 10 ym.
  • the further method steps (positions e) and f)) correspond to the method as described in connection with FIG.
  • the layers 8 for example, with a thickness in the range between 1, 5 x 10 "4 // m and 1 200 x 10" 4 // m.
  • the layers 8 can be obtained, for example, by immersing the cleaned ceramic layer 2 in an aqueous solution containing copper ions, for example in an aqueous solution with 0.005 to 2.0 mol / ICu + + ion content and / or by sputtering and / or by CVD deposition and / or chemical deposition can be applied.
  • the layers 8 can also be produced by the use of brushes with bristles containing copper in the case of mechanical removal of the surface layers 6.
  • Another method for doping the Al 2 O 3 intermediate layers 3 with copper during the thermal oxidation can be carried out by the following method steps:
  • Another method for doping the Al 2 O 3 intermediate layers 3 with copper can be carried out by the following method steps:

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Products (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Laminated Bodies (AREA)

Abstract

L'invention concerne un procédé de production de substrats DCB comportant respectivement une couche céramique constituée principalement de nitrure d'aluminium (AlN), qui est dotée sur au moins une face d'une couche intermédiaire constituée principalement d'oxyde d'aluminium, ainsi que d'une métallisation constituée d'une couche métallique ou d'une feuille métallique, placée sur la couche intermédiaire.
EP12821253.7A 2011-12-27 2012-12-27 Procédé de production de substrats dcb Withdrawn EP2797853A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102011057058 2011-12-27
DE102012100792 2012-01-31
DE102012101057A DE102012101057A1 (de) 2011-12-27 2012-02-09 Verfahren zur Herstellung von DCB-Substraten
PCT/DE2012/100400 WO2013097845A1 (fr) 2011-12-27 2012-12-27 Procédé de production de substrats dcb

Publications (1)

Publication Number Publication Date
EP2797853A1 true EP2797853A1 (fr) 2014-11-05

Family

ID=48575712

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12821253.7A Withdrawn EP2797853A1 (fr) 2011-12-27 2012-12-27 Procédé de production de substrats dcb

Country Status (7)

Country Link
US (1) US20140338162A1 (fr)
EP (1) EP2797853A1 (fr)
JP (1) JP2015503500A (fr)
KR (1) KR20140119047A (fr)
CN (1) CN104105678A (fr)
DE (1) DE102012101057A1 (fr)
WO (1) WO2013097845A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012102611B4 (de) * 2012-02-15 2017-07-27 Rogers Germany Gmbh Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates
DE102014109706A1 (de) * 2014-07-10 2016-01-14 Bundesrepublik Deutschland, Vertreten Durch Den Bundesminister Für Wirtschaft Und Energie, Dieser Vertreten Durch Den Präsidenten Der Bundesanstalt Für Materialforschung Und -Prüfung (Bam) Aufbau und Verwendung einer geometrisch dicht gepackten Pulverschicht
DE102017128316B4 (de) * 2017-11-29 2019-12-05 Rogers Germany Gmbh Verfahren zur Herstellung eines Metall-Keramik-Substrats und Metall-Keramik-Substrat
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WO2013097845A1 (fr) 2013-07-04
CN104105678A (zh) 2014-10-15
US20140338162A1 (en) 2014-11-20
KR20140119047A (ko) 2014-10-08
JP2015503500A (ja) 2015-02-02

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