Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/80—Constructional details
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
  • H10K10/80—Constructional details
  • H10K10/88—Passivation; Containers; Encapsulations
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/85—Arrangements for extracting light from the devices
  • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
  • H10K10/80—Constructional details
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/80—Constructional details
  • H10K30/88—Passivation; Containers; Encapsulations
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/84—Passivation; Containers; Encapsulations
  • H10K50/842—Containers
  • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/80—Constructional details
  • H10K50/84—Passivation; Containers; Encapsulations
  • H10K50/844—Encapsulations
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
  • H10K2102/301—Details of OLEDs
  • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/549—Organic PV cells
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
  • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
  • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

• the invention relates to an optoelectronic component and to a method for producing an optoelectronic component
• OLED Organic light-emitting diodes
• OLED organic light-emitting diodes
• stacked organic light-emitting diodes are so far prone to
• LEDs are installed. Such particles can be referred to as so-called latent short circuits (also referred to as latent short circuits (also referred to as latent short circuits).
• HIL doped hole conductor layer
• Hole transport layer usually with a layer thickness of several 100 nm, as a so-called short-circuit protective layer (Engl
• an optoelectronic component for example, an organic light emitting diode (OLED)
• OLED organic light emitting diode
• a thin layer encapsulated OLED by a novel method or. a novel process for
• Emission characteristic (or the absorption characteristic) of the optoelectronic component for example the OLED
• the optoelectronic component for example the OLED
• the thermal management in the optoelectronic component for example the OLED
• Optoelectronic component may have at least one layer of the optoelectronic component; at least one adhesive on the layer of the optoelectronic component; and a cover on the adhesive; wherein the at least one adhesive is cured only in a partial region above the substrate and / or above the layer.
• the partial region can have the edge region of the adhesive.
• the edge region may be at least part of a peripheral structure of the adhesive.
• the subregion may be arranged at least partially laterally outside an active region of the optoelectronic component.
• an active area can in various embodiments a
• Component of received light is located.
• the at least one adhesive may have a plurality of adhesives of different viscosities.
• particles may be provided in the adhesive which have a different refractive index to the adhesive.
• the adhesive may have a lower refractive index than the cover.
• the cover may be provided an optically refractive layer.
• a refractive layer can be understood as meaning a layer which has periodic structures, for example in the US Pat
• a refractive layer lenses pyramids, or truncated conical structures may at least partially enclose an area in which a liquid non-adhesive material or a liquid adhesive is provided.
• the layer may have a
• the cover may comprise or be glass or a foil.
• the method comprising: applying a cover to a layer of the optoelectronic
• Component by means of at least one adhesive; and changing the viscosity of the at least one adhesive only in a partial region above a substrate of the optoelectronic component and / or above the layer or only outside the layer.
• the viscosity by means of
• the light irradiation can be effected by irradiation of ultraviolet light.
• Figure 2 is a cross-sectional view of an optoelectronic
• Figure 3 is a cross-sectional view of an optoelectronic
• FIGS. 4A to 4E show cross-sectional views of the optoelectronic component according to FIG. 1 to different ones
• Figure 5 is a cross-sectional view of an optoelectronic
• FIG. 6 shows a plan view of the optoelectronic component according to FIG. 5;
• FIGS. 7A to 7C show principle cross-sectional views, by means of which possible damage to an optoelectronic component in conventional full-surface curing of the adhesive is illustrated;
• FIGS. 8A to 8C are cross-sectional views through which a lamination of an optoelectronic component with a curing of the adhesive is illustrated only in a partial region according to various exemplary embodiments;
• Figure 9 is a cross-sectional view of an optoelectronic
• FIG. 10 shows a plan view of the optoelectronic component according to FIG. 9;
• Figures IIA and IIB is a cross-sectional view of a
• Figs. 12A and 12B are a cross-sectional view of one
• FIG. 13 is a flowchart in which a method for the
• an optoelectronic device is provided.
• An optoelectronic component may be in different
• Embodiments as an organic light emitting diode (OLED), as a
• OPD organic photodiode
• OSC organic solar cell
• OTFT organic thin film transistor
• the plurality of optoelectronic components can be housed in a common housing.
• the plurality of optoelectronic components can be
• FIG. 1 shows an organic light-emitting diode 100 as a
• LED 100 in Figure 1 is still not encapsulated and not yet with a cover, such as a
• the optoelectronic component 100 in the form of a
• Organic light emitting diode 100 may include a substrate 102.
• the substrate 102 may serve as a support for electronic elements or layers, such as optoelectronic elements.
• the substrate 102 may include or be formed from glass, quartz, and / or a semiconductor material, or any other suitable material.
• the substrate 102 may be a plastic film or a laminate having one or more Have plastic or be formed from it.
• the plastic may be one or more polyolefins (eg, high or low density polyethylene (PE) or
• the plastic may be polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC),
• PVC polyvinyl chloride
• PS polystyrene
• PC polycarbonate
• PET Polyethylene terephthalate
• PES polyethersulfone
• PEN polyethylene naphthalate
• the substrate 102 for example, a
• Metal foil for example, an aluminum foil, a stainless steel foil, a copper foil or a combination or a stack of layers thereon.
• the substrate 102 may include one or more of the above materials.
• the substrate 102 may be translucent, for example
• translucent layer can be used in
• a layer is transparent to light, for example, for the light generated by the optoelectronic component, for example, one or more wavelength ranges, for example, for light in a wavelength range
• visible light for example, at least in one
• Translucent layer in various exemplary embodiments is to be understood as meaning that essentially the entire amount of light coupled into a structure (for example a layer) is also coupled out of the structure (for example layer).
• transparent layer can be used in
• a layer is transparent to light (for example, at least in a subregion of the wavelength range of 380 nm to 780 nm), wherein in a structure (for example, a layer) coupled light substantially without Scattering or light conversion also from the structure
• a first electrode 104 (for example in the form of a first electrode layer 104) may be applied on or above the substrate 102.
• the first electrode 104 (also referred to below as the lower electrode 104) may consist of a first electrode 104
• electrically conductive material or be formed such as a metal or a conductive transparent oxide (TCO) or a stack of layers of the same or different metal or metals and / or the same or different TCOs.
• Transparent conductive oxides are transparent, conductive materials, for example metal oxides, such as, for example, zinc oxide, tin oxide,
• binary metal-oxygen compounds such as ZnO, Sn0 2, or In 2 03
• ternary metal-oxygen compounds such as Zn 2 Sn0 4, CdSn0 3, ZnSn0 3, Mgrn 2 0 4, Galn0 3, Zn in 0 5 or In 4 Sn 3 0i 2 or mixtures of different transparent conductive oxides to the group of TCOs.
• the TCOs do not necessarily correspond to a stoichiometric composition and may also be p-doped or n-doped.
• the first electrode 104 may be formed as an anode, that is, as a hole-injecting material.
• Electrode 104 are formed by a. Layer stack of a combination of a layer of a metal on a layer of a TCO, or vice versa.
• An example is one
• ITO indium tin oxide
• the first electrode 104 may include a metal (eg, Ag, Pt, Au, Mg) or a metal
• the first electrode 104 may comprise AlZnO or similar materials.
• Electrode 104 have a metal which can serve, for example, as a cathode material, ie as an electron-injecting material.
• a cathode material may include, for example, Al, Ba, In, Ag, Au, Mg, Ca or Li and
• the organic light emitting diode 100 may be configured as a so-called To emitter and / or as a so-called bottom emitter.
• a top emitter can be understood in various embodiments as an organic light emitting diode in which the light from the organic light emitting diode upwards,
• a bottom emitter for example, through the second electrode, is emitted.
• Under a bottom emitter can be in different
• a first electrode 104 (for example in the form of a first electrode layer 104) may be applied.
• the first electrode 104 (also referred to below as lower electrode 104) may consist of a
• Transparent conductive oxides are transparent, conductive materials, for example metal oxides, such as zinc oxide, tin oxide, Cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO).
• metal oxides such as zinc oxide, tin oxide, Cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO).
• ITO indium tin oxide
• ZnO, SnC> 2, or In 2 03 also include ternary metal oxygen compounds such as AlZnO, Zn 2 Sn0 4 , CdSn0 3 , ZnSn0 3 , Mgln 2 0 4 , Galn0 3 , Zn 2 In 2 05 or
• the TCOs do not necessarily correspond to a stoichiometric composition and may also be p-doped or n-doped.
• Electrode 104 comprises a metal; For example, Ag, Pt, Au, Mg, Al, Ba, In, Ag, Au, Mg, Ca, Sm or Li, and
• Electrode 104 may be formed by a stack of layers of a combination of a layer of a metal on a layer of a TCO, or vice versa.
• An example is one
• ITO indium-tin-oxide
• ITO-Ag-ITO multilayers Silver layer deposited on an indium-tin-oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.
• ITO indium-tin-oxide
• Electrode provide one or more of the following materials as an alternative or in addition to the materials mentioned above: networks of metallic nanowires and particles, for example of Ag; Networks off
• Carbon nanotubes Carbon nanotubes; Graphene particles and layers; Networks of semiconducting nanowires.
• these electrodes may comprise conductive polymers or transition metal oxides or conductive transparent oxides.
• the first electrode 104 and the substrate 102 may be formed to be translucent or transparent. In this case, in the event that the first
• Electrode 104 is formed of a metal, the first electrode 104, for example, have a layer thickness of less than or equal to about 25 nm, for example a
• the first electrode 104 may have, for example, a layer thickness of greater than or equal to approximately 10 nm, for example a layer thickness of greater than or equal to approximately 15 nm
• the first electrode 104 a the first electrode 104 a
• Layer thickness in a range of about 10 nm to about 25 nm for example, a layer thickness in a range of about 10 nm to about 18 nm, for example, a layer thickness in a range of about 15 nm to about 18 nm.
• the first electrode 104 has, for example, a layer thickness in a range of about 50 nm to about 500 nm, for example, a layer thickness of a range of about 75 nm to about 250 nm, for example, a layer thickness in a range of
• first electrode 104 is made of, for example, a network of metallic nanowires, such as Ag, which may be combined with conductive polymers
• the first electrode 104 for example, have a layer thickness in one
• the first electrode 104 can also be configured opaque or reflective.
• the first electrode 104 may be, for example, a
• the first electrode 104 can be used as the anode, ie as
• hole-injecting electrode may be formed or as
• the first electrode 104 may be a first electrical
• a first electrical potential (provided by a power source (not shown) (e.g., a power source or a voltage source) can be applied.)
• the first electrical potential may be applied to the substrate 102 and then indirectly to the first electrode 104.
• the first electrical potential may be, for example, the ground potential or another predetermined reference potential.
• the optoelectronic component 100 may have an organic functional layer structure 106, which is or will be applied on or above the first electrode 104.
• the organic functional layer structure 106 may include one or more emitter layers 108, for example, with fluorescent and / or phosphorescent emitters, and one or more hole-line layers 110.
• Optoelectronic device 100 according to various aspects
• organometallic compounds such as derivatives of polyfluorene, polythiophene and polyphenylene (for example 2- or 2,5-substituted poly-p-phenylenevinylene) and also metal complexes, for example iridium complexes such as blue-phosphorescent FIrPic (bis (3,5-difluoro-2-) (2-pyridyl) henyl- (2-carboxypyridyl) iridium III), green phosphorescent
• Such non-polymeric emitters are for example Abscheidba by thermal evaporation. Furthermore, can
• Polymer emitter are used, which in particular by wet chemical methods, such as spin coating or slot dye coating, are deposited.
• the emitter materials may be suitably embedded in a matrix material.
• Emitter materials are also provided in other embodiments.
• Optoelectronic component 100 may for example be selected such that the optoelectronic component 100 White light emitted.
• the emitter layer (s) 108 may comprise a plurality of emitter materials of different colors (for example blue and yellow or blue, green and red)
• the emitter layer (s) 108 may be constructed of multiple sublayers, such as a blue fluorescent emitter layer 108 or blue
• the organic functional layer structure 106 may generally include one or more functional layers.
• the one or more functional layers may or may not be organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules, or a combination of these materials
• the organic functional layer structure 106 may be one or more functional
• the organic electroluminescent layer structure may comprise one or more functional layers, which may be referred to as a
• Electron transport layer (not shown) and / or designed as an electron injection layer (not shown) EP2012 / 055602
• electroluminescent region is made possible.
• the material for the hole transporting layer 110 tertiary amines, carbazoderivatives, conductive polyaniline or polythylenedioxythiophene may, for example, be used.
• the one or more functional layers may or may be embodied as an electroluminescent layer.
• Hole transport pushes 110 may be deposited on or over the first electrode 104, for example deposited, and the emitter layer 108 may be on or above the first electrode 104
• Hole transport layer 110 applied for example
• the organic functional layer structure 106 ie, for example, the sum of the thicknesses of hole transport layer (s) 110 and
• Emitter layer (s) 108) have a layer thickness of at most about 1, 5 ⁇ , for example, a layer thickness of at most, about 1, 2 ⁇ , for example, a layer thickness of at most about 1 ⁇ , for example, a layer thickness of a maximum of about 800 nm, for example a layer thickness of at most about 500 nm, for example a layer thickness of at most about 400 nm, for example a layer thickness of at most about 300 nm.
• a layer thickness of at most about 1, 5 ⁇ for example, a layer thickness of at most, about 1, 2 ⁇ , for example, a layer thickness of at most about 1 ⁇ , for example, a layer thickness of a maximum of about 800 nm, for example a layer thickness of at most about 500 nm, for example a layer thickness of at most about 400 nm, for example a layer thickness of at most about 300 nm.
• Layer structure 106 for example, a stack of
• each OLED has light emitting diodes (OLEDs).
• a layer thickness may have a maximum of about 1, 5 ⁇ , for example, a layer thickness of at most about 1, 2 ⁇ , for example, a layer thickness of ma imal approximately hr 1 ⁇ , for example, a layer thickness of maximum about 800 nm, for example, a layer thickness of ma imal about 500 nm, for example, a layer thickness of at most about 400 nm, for example, a layer thickness of at most about 300 nm.
• the organic functional layer structure 106 may have a maximum of about 1, 5 ⁇ , for example, a layer thickness of at most about 1, 2 ⁇ , for example, a layer thickness of ma imal approximately hr 1 ⁇ , for example, a layer thickness of maximum about 800 nm, for example, a layer thickness of ma imal about 500 nm, for example, a layer thickness of at most about 400 nm, for example, a layer thickness of at most about 300 nm.
• the organic functional layer structure 106 may have a maximum of about 1, 5
• the organic functional layer structure 106 may have superposed OLEDs, in which case, for example, the organic functional layer structure 106 may have a layer thickness of at most about 3 tm.
• the optoelectronic component 100 may optionally generally further organic functional layers, for example
• a second electrode 112 (for example in the form of a second electrode 112) may be provided.
• Electrode layer 112) may be applied.
• the second electrode layer 112 may be applied.
• the second electrode layer 112 may be applied.
• Electrode 112 may comprise or be formed from the same materials as the first electrode 104, wherein
• electrode 112 may have a layer thickness of less than or equal to about 50 nm, for example one
• a layer thickness of less than or equal to about 40 nm for example, a layer thickness of less than or equal to about 35 nm, for example, a layer thickness of less than or equal to approximately 30 nm, for example a layer thickness of less than or equal to approximately 25 nm,
• a layer thickness of less than or equal to about 20 nm for example, a layer thickness of less than or equal to about 15 nm, for example, a layer thickness of less than or equal to about 10 nm.
• the second electrode 112 may generally be formed similarly to, or different from, the first electrode 104.
• the second electrode 112 may in one or more embodiments
• transducible or transparent may be formed as described above in connection with the first electrode 104.
• Electrode 112 (which may also be referred to as
• Cover contact 112) may be formed semitransparent or transparent.
• electrode 112 have an arbitrarily greater layer thickness, for example, a layer thickness of at least 1 ⁇ when the second electrode 112 is formed semitransparent or transparent.
• the second electrode 112 may have a second electrical connection, to which a second electrical connection
• the second electrical potential may, for example, have a value such that the difference to the first electrical potential has a value in a range of approximately 1.5V to approximately 20V, for example a value in a range of approximately 2.5V to about 15V, for example, a value in a range of about 5V to about 10V.
• a mirror layer structure 114 is applied in various exemplary embodiments.
• the mirror layer structure 114 has a layer thickness of at least 1 ⁇ m.
• the mirror layer structure 114 may include one or more metal films
• the one or more metal films of the mirror layer structure 114 may each have a layer thickness in a range of about 5 nm to about 5000 nm, for example, a layer thickness in a range of about 15 nm to about 1000 nm,
• the mirror layer structure 114 for example, have a layer thickness in a range of about 50 n to about 300 nm, so that the mirror layer structure 114 has an overall layer structure thickness in the range of about 10 nm to about 5000 nm, for example, a layer thickness in a range from about 15 nm to about 1000 nm,
• all of the materials used for the mirror layer structure 114, as listed above for the second electrode 112, may also be used doped metal oxide
• the mirror layer structure 114 may include one or more mirrors. If the mirror layer structure 114 has a plurality of mirrors, the respective mirrors are separated from one another by means of a respective dielectric layer.
• the mirror layer structure 114 may also be omitted and their
• Additional layers for example, to improve the adhesion or the processability can be provided in various embodiments.
• the organic light-emitting diode 100 can still have one or more encapsulation layers (not shown),
• the light is in various embodiments by the optically translucent, for example, optically
• Electrode of the optoelectronic component, such as the OLED, emitted (in this case, the OLED
• Fig. 2 shows an organic light emitting diode 200 as a
• the organic light emitting diode 200 according to Figure 2 is in many embodiments.
• Mirror layer structure 202 is not formed on or above the second electrode 112, but below the first
• Electrode 104
• the power source is connected in these embodiments to the first electrical connection of the first electrode 104 and to the second electrical connection of the second electrode 112.
• the organic light-emitting diode 200 according to FIG. 2 can be designed as a top emitter.
• the organic light-emitting diode 200 according to Figure 2 illustratively a
• Both contacts ⁇ i. the first electrode 104 and the second electrode 112) are semitranslucent in this embodiment, for example
• an encapsulation layer structure 20 for example in the form of a thin-layer encapsulation 20, is arranged on or above the second electrode 112.
• the substrate side is illustrative
• Embodiments transmitted to a surface side emitting optoelectronic device for example a surface emitting OLED
• a surface side emitting optoelectronic device for example a surface emitting OLED
• the external metal mirror below the optically translucent
• the OLED may be arranged or be transparent, basic contact.
• transparent cover contact for example, the second electrode
• transparent cover contact is thus formed for example as a top emitter.
• the mirror layered structure such as the thick metal mirror, may be applied directly to the substrate 102 while maintaining the bottom contact, i. the first electrode 302 of the
• optoelectronic component 300 for example, an OLED 300 form. Such an optoelectronic component 300 is shown in FIG.
• Component 300 according to FIG. 3 is identical to the layer stack of the optoelectronic component 200 according to FIG.
• the organic light emitting diode can also iron any other suitable structure.
• FIGS. 4A to 4F show the optoelectronic component 100 according to various embodiments at different times during its manufacture. The others
• Optoelectronic components 200, 300 can be used in any combination
• FIG. 4A shows the optoelectronic component 100 at a first point in time 400 during its production.
• the first electrode 104 is applied to the substrate 102, for example, deposited,
• a CVD method chemical vapor deposition, chemical vapor deposition
• a PVD process physical vapor deposition, physical vapor deposition
• PE-CVD plasma enhanced chemical vapor deposition
• the dielectric layer can be reduced as compared to a plasma-less CVD process.
• This may be advantageous, for example, if the element, for example the light-emitting electronic component to be formed, is connected to a
• the Ma imaltemperatur may be about 120 ° C, for example, in a light-emitting electronic component to be formed according to various embodiments, so that the temperature at which, for example, the dielectric layer is applied, less than or equal to 120 ° C and, for example, less than or equal to 80 ° C. can.
• 4B shows the optoelectronic component 100 at a second point in time 402 during its production. At this time, the one or more hole conductive layers 110 become or become the first electrode 104
• CVD chemical vapor deposition, chemical vapor deposition
• PVD physical vapor deposition, physical vapor deposition, for example sputtering
• Evaporation alternatively by means of a plating process; a Tauchabborgevons; a spin coating process; Printing; Doctoring; or spraying.
• 4C shows the optoelectronic component 100 at a third time 404 during its production.
• the one or more emitter layers 108 will become or become one or more
• CVD chemical vapor deposition, chemical vapor deposition
• PVD physical vapor deposition, physical vapor deposition, for example sputtering, ion-assisted
• 4D shows the optoelectronic component 100 at a fourth time 406 during its production.
• the second electrode 112 will be attached to the one or more other organic functional layers (if present) or to the one or more
• Emitter layers 108 applied, for example
• CVD chemical vapor deposition, chemical vapor deposition
• PVD physical vapor deposition, physical vapor deposition, for example sputtering, ion-assisted
• FIG. 4E shows the optoelectronic component 100 at a fifth time 408 during its production.
• the mirror layered structure 114 having the above-described lateral thermal conductivity is applied to the second electrode 112, for example, by CVD (Chemical Vapor Deposition) method or PVD (Physical Deposition Method) method Gas phase, physical vapor deposition, for example sputtering, ion-assisted
• FIG. 5 shows a cross-sectional view of an optoelectronic component 500 with cover according to various
• the optoelectronic component 500 a carrier 502, for example, a substrate 502, have.
• the carrier 502 may comprise any, for example, electrically insulating material. I different
• the carrier 502 also from the
• Substrate 102 are formed. In different
• the carrier 502 can be formed from the materials as described above in connection with
• Optoelectronic component (optionally already provided with a thin-layer encapsulation), for example, the organic light-emitting diode 100, 200, 300 applied,
• a cover 506, for example a glass cover 506, is fastened, for example glued, by means of an adhesive 504 in various exemplary embodiments,
• an electrically insulating film such as a plastic sheet
• an electrically conductive film such as a
• the adhesive 504 may include or consist of one or more of the following materials: polymeric materials, such as epoxy resins, acrylates, fluoropolymers,
• PMMA Polymethyl methacrylate
• MA + PMMA Polymethyl methacrylate
• EVA ethylene vinyl acetate
• polyesters Polyurethanes or the like.
• the adhesive 504 is liquid when applied
• jelly or jelly-like for example, jelly or jelly-like and has a
• Embodiments lamination process is the cover 506, for example, a glass cover 506, (for example, the entire surface) on the organic light emitting diode 100, 200, 300, for example, on the back,
• the adhesive 504 is applied over the whole area to the organic light-emitting diode 100, 200, 300 and conventionally with the entire surface
• the adhesive 504 is exposed to ultraviolet radiation (see FIGS. 7A to 7C)
• the adhesive 504 usually contracts by a few percent or expands depending on
• Embedded particles can, for example, in the
• organic light emitting diode 100, 200, 300 are pushed in or torn out. During operation of the organic light-emitting diode 100, 200, 300, this can lead to short-circuiting of the entire optoelectronic component. Stretch the
• FIG. 7A shows, in a first view 700, the not yet cured adhesive 504, wherein particles 702 are contained in the adhesive 504 and / or in the organic light emitting diode 100, 200, 300.
• 7A shows in a second view 710 the cured by full-surface UV exposure adhesive 712, which contracts or expands due to the UV exposure. This results in mechanical stresses at the interface between the organic light-emitting diode 100, 200, 300 and the adhesive 712, which act on the particles 702 (symbolized in FIG. 7B by means of arrows 714). In operation, the organic heats up
• the encapsulation layer (s) can lead, symbolized with a lightning symbol 716).
• the adhesive 504 is only in a partial area above the substrate 502 and / or above the organic light emitting diode 100, 200, 300, for example, above the
• the portion is an area above the carrier 502 adjacent to the organic light emitting diode 100, 200, 300.
• an edge portion 508 of the adhesive 504 is cured, whereas one of the edge portion 508 of the adhesive 504 is substantially completely enclosed
• Inside area 510 of the adhesive 504 remains substantially unchanged in its viscosity and thus remains liquid, for example, gel-like or jelly-like (see, for example, the top view in Figure 6, in which the cover 506 is not shown).
• the organic light-emitting diode 100, 200, 300 shown in dashed lines is symbolized that it is completely covered by the adhesive 504. Vividly can in different
• Embodiments of the edge region 508 of the adhesive 504 a peripheral region of the adhesive 504 on iron or of
• the edge region 510 laterally to the edge of the organic light emitting diode 100, 200, 300th
• edge region partially or completely above the organic light emitting diode 100, 200, 300 and thus above the active region of the
• optoelectronic component 500 wherein, however, an inner region above the organic light emitting diode 100, 200, 300 and thus above the active region of the
• optoelectronic component 500 adhesive 504 on eist which remains substantially unchanged in its viscosity and thus continue liquid, such as gel or
• the adhesive 504 is clearly illustrated on the carrier 502 and / or the organic light emitting diode 100, 200, 300 and / or the entire surface
• Cover 506 applied, edoch only a portion of the adhesive 504, for example, above an edge region of the optoelectronic device 500, for example of the
• Hardened edge region 510 (for example, outside the active surface of the optoelectronic device 500),
• exposed for example, exposed by means of UV light. But it can also light in another
• Wavelength range for curing the adhesive 504 are used, for example, light with even smaller wavelengths. It should be noted that in alternative Embodiments other methods of curing the adhesive 504 in the sub-area can also be used, for example, a local heating by means of an electric heat source (not shown), by the local curing of the adhesive only in a partial area
• the adhesive 504 retains its gelatinous or
• FIG. 5 shows an optoelectronic component 500, for example an OLED 500, with glass lamination and uncured adhesive in the active region of the optoelectronic component 500, for example the OLED 500.
• the adhesive 504 is cured and thus provides the (Adhesive) connection between the carrier 502 and the cover 506, for example, the cover glass 506 ago. Slippage of the cover 506, for example, the cover glass 506, relative to the carrier 502 is thus prevented.
• Particles 802 which are located in the adhesive 504, or even during the vapor deposition of the individual layers of the organic light emitting diode 100, 200, 300 in the organic
• Light emitting diode 100, 200, 300 were introduced, are now no longer pressed or pulled out in the organic light-emitting diode 100, 200, 300 according to various embodiments.
• Figs. 5A to 8C show principle cross-sectional views by means of which a lamination of an optoelectronic
• the adhesive 504 is applied to the organic light emitting diode 100, 200, 300 the adhesive 504 applied over the entire surface and only in one
• the adhesive 504 is polymerized in the exposed portion, for example. In this case, the adhesive 504 usually draws in the exposed portion
• Embedded particles 802 are therefore also subject to no or only reduced mechanical stresses.
• the adhesive 504 is designed to be electrically insulating in various embodiments, the adhesive 504 clearly smothers or insulates the defect location 822. A kind of courtyard, in which there is less adhesive material, is created around it.
• the heat generated at an existing hotspot can be better discharged to the outside, since the medium is movable (liquid) and thus a better heat exchange (possibly also by convection) can take place.
• delamination of the cover 506, such as the glass cover 506, also becomes referred to as coverslip 506, prevented at the shorted locations, resulting in cured adhesive 504 by the sudden evaporation of the materials to the
• Embodiments (significantly) larger than the actual short-circuit area.
• transparent components for example, this has the disadvantage that such delamination parts have the appearance of the optoelectronic component,
• an OLED both in the off state negative affect or in the on state to large area (for example, in a range of
• FIG. 9 shows a cross-sectional view of an optoelectronic component 900 with cover according to various
• FIG. 10 shows a plan view of the optoelectronic component 900 according to FIG.
• the adhesives 902, 904 may have different curing properties on iron such that they are selectively curable, for example; so can
• a first adhesive 902 already cure when irradiated with light of a wavelength or energy at which a second adhesive 904 does not harden. So can
• the first adhesive 902 is arranged in various exemplary embodiments above the carrier 502, for example in an edge region of the carrier 502 or the cover 506, and encloses, for example, the second adhesive 904 laterally so that the cured first adhesive 902
• Embodiment even a part of the first adhesive 902 may be completely cured and / or a part of the second adhesive 904 may be completely cured.
• the first adhesive 902 may include or consist of one or more of the following materials: Polymeric materials
• Fluoropolymers perfluoropolyethers, PFPE (meth) acrylates, silicones, polymethyl methacrylate (PMMA), MMA + PMMA,
• EVA Ethylene vinyl acetate
• the second adhesive 904 may comprise or consist of one or more of the following materials: polymer materials, which for example consist of epoxy resins, acrylates, fluoropolymers,
• PMMA Polymethyl methacrylate
• MMA + PMMA Polymethyl methacrylate
• EVA ethylene vinyl acetate
• polyesters polyurethanes or the like.
• various materials for example different adhesives for the adhesive area, for example, at the edge of the substrate, can be used
• the first adhesive 902 may be formed at the edge by a dispersion process
• the second adhesive 904 may be applied in the interior region of the optoelectronic device, for example in the active region of the optoelectronic device, for example of a different viscosity, by means of a printing process.
• another liquid such as gelatinous or jelly-like
• Material be provided, for example, a gel, generally a liquid, oil, silicone, etc. be provided in the interior of the optoelectronic device,
• the active region of the optoelectronic device for example, enclosed by the first
• Component for example, in the active region of the optoelectronic device, a material is introduced, which can not be cured by means of light (for example, not by UV light), generally not in the manner in which the first adhesive 902 is cured, creating a preventing later hardening of the second adhesive 904 or the alternative liquid material intended for this during later operation.
• a material for example, in the active region of the optoelectronic device, a material is introduced, which can not be cured by means of light (for example, not by UV light), generally not in the manner in which the first adhesive 902 is cured, creating a preventing later hardening of the second adhesive 904 or the alternative liquid material intended for this during later operation.
• Inner area generally outside the portion in which the adhesive 504, 902 is cured or is provided, for example, in the active area, scattering particles or scattering materials may be provided in an appropriate manner.
• the fixation of the cover 506 is then carried out in differentariesbeis ie1en at the edge region by means of the cured adhesive 50, 902, clearly through the adhesive edge formed.
• Scattering particles can the light within this layer
• a liquid such as an oil, or a silicone, etc. having a lower refractive index in the interior region of the optoelectronic component
• the emission profile of the optoelectronic component for example the OLED, can be modified and, for example, adjusted in a targeted manner in various embodiments in this way.
• the designed cover glass it may have a higher refractive index than the liquid, such as the oil, or the silicone, etc.
• FIG. IIA and FIG. IIB show a cross-sectional view of an optoelectronic component 1100 (FIG. IIA) according to FIG.
• the optoelectronic component 1100 is similar to the optoelectronic component 500 according to FIG. 5 or the optoelectronic component 900 according to FIG. 9, for which reason only some differences will be explained below. With regard to the remaining features, reference is made to the statements regarding the optoelectronic component 500 according to FIG. 5 and with regard to the optoelectronic component 900 according to FIG. As shown in FIG. IIA
• Cover 506, for example, the cover glass 506 or the cover 506, for example, a lens structure 1104 on. Furthermore, the material in the interior has a
• FIGS. 12A and 12B show a cross-sectional view of an optoelectronic component 1200 (FIG
• the optoelectronic component 1200 is Similar to the optoelectronic component 500 according to FIG. 5 or the optoelectronic component 900 according to FIG. 9, for which reason only some differences will be explained below. With regard to the remaining features, reference is made to the statements regarding the optoelectronic component 500 according to FIG. 5 and with regard to the optoelectronic component 900 according to FIG. As in Fig. 12A
• a lens structure 1204 on. Furthermore, the material in the inner region has a refractive index which is smaller than the refractive index of the material of FIG.
• a low refractive adhesive or a corresponding low refractive liquid in the interior area becomes
• an OLED used.
• thermally conductive particles such as glass or
• organic light emitting diode 100, 200, 300, can lead.
• hotspots that have led to a short circuit with conventional methods can be reduced or mitigated in their effect.
• the HIL layer thickness can be reduced, resulting in cost savings by reducing the material consumption.
• the reduction of the HIL layer thickness in various embodiments has a positive influence on the transparency, since a lower total layer thickness can reduce the absorption within the OLED and the transparency can be pushed into the first broad maximum of the etaion effect.
• the ⁇ is a ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇
• organic layers of the organic optoelectronic component, for example, the OLED, in the active surface is not damaged by UV light, resulting in an improvement of the aging behavior of the organic optoelectronic
• Component such as the OLED can lead.
• the luminance distribution can be homogenized. Furthermore, the luminance aging can be improved for large-area components.
• the output can be improved, for example, in the case of top-emitting OLEDs become . But even with transparent OLEDs it is in
• cover glasses / foils with a special structure it is also possible, in accordance with various embodiments, for cover glasses / foils with a special structure, to have the
• Optoelectronic component or at the edge of the cover 506, on the one hand and for the medium in the inner region, for example, the active region of the optoelectronic device, on the other hand, can be used as the medium optical gel. This can be done in different
• Embodiments for example, a printing process
• the medium in the inner region for example the active region of the optoelectronic component, and at the edge a dispensing process for the
• Glue 504 are used.
• a liquid or a gel for improving the optical coupling or to avoid short circuits.
• materials can be used which the thermal conductivity Leitf
• FIG. 13 shows a flowchart 1300, in which a method for producing an optoelectronic component according to various exemplary embodiments is illustrated.
• the method may include, in 1302, applying a cover to a layer of the optoelectronic component by means of at least one adhesive.
• the adhesive may initially be applied to a surface of the cover
• Light-emitting diode for example organic light-emitting diode
• the adhesive can be applied to the carrier and the layer of the optoelectronic component (for example, a front-end-of-line process
• the method may include, in 1304, a
• the viscosity can be changed by means of light irradiation.
• the light irradiation can be done by irradiation of ultraviolet light.

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• Physics & Mathematics (AREA)
• Optics & Photonics (AREA)
• Electromagnetism (AREA)
• Engineering & Computer Science (AREA)
• Manufacturing & Machinery (AREA)
• Electroluminescent Light Sources (AREA)

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• 2011
  • 2011-05-31 DE DE102011076750A patent/DE102011076750A1/de not_active Withdrawn
• 2012
  • 2012-03-29 US US14/117,888 patent/US9190628B2/en active Active
  • 2012-03-29 CN CN201280026783.XA patent/CN103563116A/zh active Pending
  • 2012-03-29 WO PCT/EP2012/055602 patent/WO2012163569A1/de active Application Filing
  • 2012-03-29 KR KR1020157011536A patent/KR20150055627A/ko active Search and Examination
  • 2012-03-29 KR KR1020137035048A patent/KR20140021052A/ko not_active Application Discontinuation
  • 2012-03-29 EP EP12714270.1A patent/EP2715824A1/de not_active Ceased

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