EP2697412A4 - Siliciumblock mit mehreren gleichmässigen dotierungsmitteln sowie verfahren und vorrichtung zu seiner herstellung - Google Patents

Siliciumblock mit mehreren gleichmässigen dotierungsmitteln sowie verfahren und vorrichtung zu seiner herstellung

Info

Publication number
EP2697412A4
EP2697412A4 EP12771909.4A EP12771909A EP2697412A4 EP 2697412 A4 EP2697412 A4 EP 2697412A4 EP 12771909 A EP12771909 A EP 12771909A EP 2697412 A4 EP2697412 A4 EP 2697412A4
Authority
EP
European Patent Office
Prior art keywords
silicon ingot
producing same
uniform multiple
multiple dopants
dopants
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP12771909.4A
Other languages
English (en)
French (fr)
Other versions
EP2697412B1 (de
EP2697412A2 (de
Inventor
Bayard K Johnson
John P Deluca
William L Luter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gtat Ip Holding LLC
Original Assignee
GT Advanced CZ LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GT Advanced CZ LLC filed Critical GT Advanced CZ LLC
Publication of EP2697412A2 publication Critical patent/EP2697412A2/de
Publication of EP2697412A4 publication Critical patent/EP2697412A4/de
Application granted granted Critical
Publication of EP2697412B1 publication Critical patent/EP2697412B1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
EP12771909.4A 2011-04-14 2012-04-13 Verfahren zur herstellung eines siliciumblocks mit axial gleichmässiger dotierung Active EP2697412B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161475351P 2011-04-14 2011-04-14
PCT/US2012/033593 WO2012142463A2 (en) 2011-04-14 2012-04-13 Silicon ingot having uniform multiple dopants and method and apparatus for producing same

Publications (3)

Publication Number Publication Date
EP2697412A2 EP2697412A2 (de) 2014-02-19
EP2697412A4 true EP2697412A4 (de) 2014-09-03
EP2697412B1 EP2697412B1 (de) 2018-07-25

Family

ID=47010006

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12771909.4A Active EP2697412B1 (de) 2011-04-14 2012-04-13 Verfahren zur herstellung eines siliciumblocks mit axial gleichmässiger dotierung

Country Status (8)

Country Link
US (1) US10202705B2 (de)
EP (1) EP2697412B1 (de)
JP (2) JP2014511146A (de)
KR (1) KR20140097971A (de)
CN (1) CN103608496B (de)
MY (1) MY173316A (de)
TW (1) TWI618678B (de)
WO (1) WO2012142463A2 (de)

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FR2994982B1 (fr) * 2012-09-04 2016-01-08 Commissariat Energie Atomique Procede de fabrication d'une plaquette en silicium monolithique a multi-jonctions verticales.
US9834857B2 (en) * 2013-05-16 2017-12-05 S-Tech Co., Ltd. Ingot raw material supply system
US9822466B2 (en) 2013-11-22 2017-11-21 Corner Star Limited Crystal growing systems and crucibles for enhancing heat transfer to a melt
US10724148B2 (en) * 2014-01-21 2020-07-28 Infineon Technologies Ag Silicon ingot and method of manufacturing a silicon ingot
DE102014107590B3 (de) * 2014-05-28 2015-10-01 Infineon Technologies Ag Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers
JP6299543B2 (ja) * 2014-09-18 2018-03-28 信越半導体株式会社 抵抗率制御方法及び追加ドーパント投入装置
US10337117B2 (en) 2014-11-07 2019-07-02 Infineon Technologies Ag Method of manufacturing a silicon ingot and silicon ingot
CN104499048A (zh) * 2014-12-07 2015-04-08 海安县石油科研仪器有限公司 一种连续加料的单晶硅生长工艺
WO2018012654A1 (ko) * 2016-07-14 2018-01-18 포토멕 주식회사 실리콘 반도체 잉곳 제조용 투입장치 및 도핑방법
US10920337B2 (en) 2016-12-28 2021-02-16 Globalwafers Co., Ltd. Methods for forming single crystal silicon ingots with improved resistivity control
WO2019051247A1 (en) * 2017-09-08 2019-03-14 Corner Star Limited HYBRID CUTTER ASSEMBLY FOR CZOCHRALSKI CRYSTAL GROWTH
EP3864197B1 (de) 2018-10-12 2022-08-03 GlobalWafers Co., Ltd. Dotierstoffkonzentrationssteuerung in siliciumschmelze zur verbesserung der blockqualität
US11959189B2 (en) 2019-04-11 2024-04-16 Globalwafers Co., Ltd. Process for preparing ingot having reduced distortion at late body length
KR102576552B1 (ko) 2019-04-18 2023-09-07 글로벌웨이퍼스 씨오., 엘티디. 연속 쵸크랄스키 방법을 사용하여 단결정 실리콘 잉곳을 성장시키기 위한 방법들
JP2022548592A (ja) * 2019-09-13 2022-11-21 グローバルウェーハズ カンパニー リミテッド 連続チョクラルスキー法を用いる窒素ドープ単結晶シリコンインゴットの成長方法およびこの方法により成長させた単結晶シリコンインゴット
US11111597B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method
US11111596B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Single crystal silicon ingot having axial uniformity
TWI784689B (zh) * 2020-09-29 2022-11-21 日商Ｓｕｍｃｏ股份有限公司 矽單結晶的製造方法
US11499245B2 (en) * 2020-12-30 2022-11-15 Globalwafers Co., Ltd. Additive feed systems, ingot puller apparatus and methods for forming a single crystal silicon ingot with use of such additive feed systems

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WO1986006764A1 (en) * 1985-05-17 1986-11-20 J.C. Schumacher Company Continuously pulled single crystal silicon ingots
EP0350305A2 (de) * 1988-07-07 1990-01-10 Nkk Corporation Verfahren und Vorrichtung zur Herstellung von Einkristallen aus Silicium
JPH0218377A (ja) * 1988-07-07 1990-01-22 Nkk Corp ドープ剤供給装置
DE4213097A1 (de) * 1992-04-19 1993-10-21 Nippon Kokan Kk Zuführvorrichtung für Dotierungsstoffe für eine Vorrichtung zur Herstellung von Siliziumeinkristallen
US5324488A (en) * 1991-03-01 1994-06-28 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoff M.B.H. Continuous liquid silicon recharging process in czochralski crucible pulling
EP0798403A1 (de) * 1996-03-27 1997-10-01 Shin-Etsu Handotai Company Limited Czochralskiverfahren mit kontinuierlichen Laden zur Herstellung Silizium-Einkristallen und Vorrichtung zur Zuführung eines Dotierstoffes
JP2002128591A (ja) * 2000-10-24 2002-05-09 Shin Etsu Handotai Co Ltd シリコン結晶及びシリコン結晶ウエーハ並びにその製造方法
US20050092236A1 (en) * 2003-11-03 2005-05-05 Bender David L. System for continuous growing of monocrystalline silicon
US20070056504A1 (en) * 2005-09-12 2007-03-15 Rexor Corporation Method and apparatus to produce single crystal ingot of uniform axial resistivity
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986006764A1 (en) * 1985-05-17 1986-11-20 J.C. Schumacher Company Continuously pulled single crystal silicon ingots
EP0350305A2 (de) * 1988-07-07 1990-01-10 Nkk Corporation Verfahren und Vorrichtung zur Herstellung von Einkristallen aus Silicium
JPH0218377A (ja) * 1988-07-07 1990-01-22 Nkk Corp ドープ剤供給装置
US5324488A (en) * 1991-03-01 1994-06-28 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoff M.B.H. Continuous liquid silicon recharging process in czochralski crucible pulling
DE4213097A1 (de) * 1992-04-19 1993-10-21 Nippon Kokan Kk Zuführvorrichtung für Dotierungsstoffe für eine Vorrichtung zur Herstellung von Siliziumeinkristallen
EP0798403A1 (de) * 1996-03-27 1997-10-01 Shin-Etsu Handotai Company Limited Czochralskiverfahren mit kontinuierlichen Laden zur Herstellung Silizium-Einkristallen und Vorrichtung zur Zuführung eines Dotierstoffes
JP2002128591A (ja) * 2000-10-24 2002-05-09 Shin Etsu Handotai Co Ltd シリコン結晶及びシリコン結晶ウエーハ並びにその製造方法
US20050092236A1 (en) * 2003-11-03 2005-05-05 Bender David L. System for continuous growing of monocrystalline silicon
US20070056504A1 (en) * 2005-09-12 2007-03-15 Rexor Corporation Method and apparatus to produce single crystal ingot of uniform axial resistivity
WO2009025336A1 (ja) * 2007-08-21 2009-02-26 Sumco Corporation Ｉｇｂｔ用のシリコン単結晶ウェーハ及びｉｇｂｔ用のシリコン単結晶ウェーハの製造方法

Also Published As

Publication number Publication date
KR20140097971A (ko) 2014-08-07
CN103608496A (zh) 2014-02-26
EP2697412B1 (de) 2018-07-25
WO2012142463A3 (en) 2013-01-17
US20120301386A1 (en) 2012-11-29
US10202705B2 (en) 2019-02-12
MY173316A (en) 2020-01-15
JP2014511146A (ja) 2014-05-12
TWI618678B (zh) 2018-03-21
TW201247560A (en) 2012-12-01
WO2012142463A2 (en) 2012-10-18
CN103608496B (zh) 2017-12-26
EP2697412A2 (de) 2014-02-19
JP2016179937A (ja) 2016-10-13

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