EP2659521A4 - Verfahren und vorrichtung zur herstellung einer dünnschicht - Google Patents

Verfahren und vorrichtung zur herstellung einer dünnschicht

Info

Publication number
EP2659521A4
EP2659521A4 EP11854117.6A EP11854117A EP2659521A4 EP 2659521 A4 EP2659521 A4 EP 2659521A4 EP 11854117 A EP11854117 A EP 11854117A EP 2659521 A4 EP2659521 A4 EP 2659521A4
Authority
EP
European Patent Office
Prior art keywords
forming
thin lamina
lamina
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11854117.6A
Other languages
English (en)
French (fr)
Other versions
EP2659521A2 (de
Inventor
Adam Kell
Robert Clark-Phelps
Joseph D Gillespie
Gopal Prabhu
Takao Sakase
Theodore H Smick
Steve Zuniga
Steve Bababyan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GTAT Corp
Original Assignee
GTAT Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/980,424 external-priority patent/US8173452B1/en
Application filed by GTAT Corp filed Critical GTAT Corp
Publication of EP2659521A2 publication Critical patent/EP2659521A2/de
Publication of EP2659521A4 publication Critical patent/EP2659521A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Materials For Medical Uses (AREA)
EP11854117.6A 2010-12-29 2011-12-20 Verfahren und vorrichtung zur herstellung einer dünnschicht Withdrawn EP2659521A4 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US12/980,424 US8173452B1 (en) 2010-12-29 2010-12-29 Method to form a device by constructing a support element on a thin semiconductor lamina
US201161510476P 2011-07-21 2011-07-21
US201161510478P 2011-07-21 2011-07-21
US201161510477P 2011-07-21 2011-07-21
US201161510475P 2011-07-21 2011-07-21
PCT/US2011/066195 WO2012092026A2 (en) 2010-12-29 2011-12-20 A method and apparatus for forming a thin lamina

Publications (2)

Publication Number Publication Date
EP2659521A2 EP2659521A2 (de) 2013-11-06
EP2659521A4 true EP2659521A4 (de) 2015-05-13

Family

ID=46383810

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11854117.6A Withdrawn EP2659521A4 (de) 2010-12-29 2011-12-20 Verfahren und vorrichtung zur herstellung einer dünnschicht

Country Status (6)

Country Link
EP (1) EP2659521A4 (de)
JP (1) JP2014506008A (de)
KR (1) KR20140004120A (de)
CN (1) CN103370800A (de)
TW (1) TWI552205B (de)
WO (1) WO2012092026A2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9369553B2 (en) * 2012-11-14 2016-06-14 Gtat Corporation Mobile electronic device comprising an ultrathin sapphire cover plate
WO2015040907A1 (ja) 2013-09-17 2015-03-26 株式会社村田製作所 垂直共振器型面発光レーザの製造方法
CN103646990A (zh) * 2013-11-28 2014-03-19 青岛蓝图文化传播有限公司市南分公司 一种解理的方法
SG10201902920SA (en) * 2014-11-19 2019-05-30 Corning Inc Apparatus and method of peeling a multi-layer substrate
JP6687829B2 (ja) * 2015-08-17 2020-04-28 シンフォニアテクノロジー株式会社 誘導加熱装置
TWI632982B (zh) * 2017-07-03 2018-08-21 陽程科技股份有限公司 Plate retaining device
CN111244015B (zh) * 2020-01-20 2023-07-21 杭州立昂东芯微电子有限公司 一种晶圆解键合辅助载盘、解键合机及解键合方法
TWI749783B (zh) * 2020-09-24 2021-12-11 鴻績工業股份有限公司 氣房式吸取模組

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030216008A1 (en) * 2002-05-02 2003-11-20 Walter Schwarzenbach Process for dataching layers of material
US20070277874A1 (en) * 2006-05-31 2007-12-06 David Francis Dawson-Elli Thin film photovoltaic structure
EP2117053A2 (de) * 2008-05-07 2009-11-11 Silicon Genesis Corporation Schichtübertragung von Folien mittels gesteuerter Scherregion
US20100159630A1 (en) * 2008-12-18 2010-06-24 Twin Creeks Technologies, Inc. Method for making a photovoltaic cell comprising contact regions doped through a lamina

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07176482A (ja) * 1991-05-31 1995-07-14 At & T Corp エピタキシャル成長方法および装置
JPH08254392A (ja) * 1995-03-17 1996-10-01 Fujitsu Ltd 基板の熱処理方法及び熱処理装置
JPH10223496A (ja) * 1997-02-12 1998-08-21 Ion Kogaku Kenkyusho:Kk 単結晶ウエハおよびその製造方法
JP2000077287A (ja) * 1998-08-26 2000-03-14 Nissin Electric Co Ltd 結晶薄膜基板の製造方法
JP4452789B2 (ja) * 1999-09-01 2010-04-21 独立行政法人 日本原子力研究開発機構 シリコン系結晶薄板の製造方法および光電変換素子用基板の製造方法
CN100579333C (zh) * 2003-01-23 2010-01-06 东丽株式会社 电路基板用部件、电路基板的制造方法及电路基板的制造装置
TW200607023A (en) * 2004-08-04 2006-02-16 Tien-Hsi Lee A method to fabricate a thin film on a substrate
CN101467245A (zh) * 2006-05-31 2009-06-24 康宁股份有限公司 薄膜光伏结构及其制造
JP2008062476A (ja) * 2006-09-06 2008-03-21 Disco Abrasive Syst Ltd 加工装置およびチャックテーブル
JP5065748B2 (ja) * 2007-04-27 2012-11-07 信越化学工業株式会社 貼り合わせウエーハの製造方法
JP2008294080A (ja) * 2007-05-22 2008-12-04 Sanyo Electric Co Ltd 太陽電池セル及び太陽電池セルの製造方法
JP5248994B2 (ja) * 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 光電変換装置の製造方法
US8481845B2 (en) * 2008-02-05 2013-07-09 Gtat Corporation Method to form a photovoltaic cell comprising a thin lamina
JP2009283582A (ja) * 2008-05-21 2009-12-03 Shin Etsu Handotai Co Ltd 貼り合わせウェーハの製造方法及び貼り合わせウェーハ
CN102171745B (zh) * 2009-02-06 2014-10-08 旭硝子株式会社 电子器件的制造方法及该方法中使用的剥离装置
JP2010244864A (ja) * 2009-04-07 2010-10-28 Shin-Etsu Chemical Co Ltd 基板加熱構造体

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030216008A1 (en) * 2002-05-02 2003-11-20 Walter Schwarzenbach Process for dataching layers of material
US20070277874A1 (en) * 2006-05-31 2007-12-06 David Francis Dawson-Elli Thin film photovoltaic structure
EP2117053A2 (de) * 2008-05-07 2009-11-11 Silicon Genesis Corporation Schichtübertragung von Folien mittels gesteuerter Scherregion
US20100159630A1 (en) * 2008-12-18 2010-06-24 Twin Creeks Technologies, Inc. Method for making a photovoltaic cell comprising contact regions doped through a lamina

Also Published As

Publication number Publication date
TWI552205B (zh) 2016-10-01
WO2012092026A2 (en) 2012-07-05
EP2659521A2 (de) 2013-11-06
CN103370800A (zh) 2013-10-23
JP2014506008A (ja) 2014-03-06
TW201246301A (en) 2012-11-16
KR20140004120A (ko) 2014-01-10
WO2012092026A3 (en) 2012-10-11

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RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 21/265 20060101ALI20150408BHEP

Ipc: H01L 31/0224 20060101ALI20150408BHEP

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Ipc: H01L 21/683 20060101ALI20150408BHEP

Ipc: H01L 31/056 20140101ALI20150408BHEP

Ipc: H01L 31/18 20060101AFI20150408BHEP

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