EP2547516A1 - Photovoltaic module with stabilized polymer - Google Patents

Photovoltaic module with stabilized polymer

Info

Publication number
EP2547516A1
EP2547516A1 EP10712833A EP10712833A EP2547516A1 EP 2547516 A1 EP2547516 A1 EP 2547516A1 EP 10712833 A EP10712833 A EP 10712833A EP 10712833 A EP10712833 A EP 10712833A EP 2547516 A1 EP2547516 A1 EP 2547516A1
Authority
EP
European Patent Office
Prior art keywords
poly
benzotriazole
layer
vinyl butyral
vinyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10712833A
Other languages
German (de)
English (en)
French (fr)
Inventor
Weihong Cui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Solutia Inc
Original Assignee
Solutia Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solutia Inc filed Critical Solutia Inc
Publication of EP2547516A1 publication Critical patent/EP2547516A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/1055Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
    • B32B17/10678Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer comprising UV absorbers or stabilizers, e.g. antioxidants
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/1055Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
    • B32B17/10761Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer containing vinyl acetal
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/16Nitrogen-containing compounds
    • C08K5/34Heterocyclic compounds having nitrogen in the ring
    • C08K5/3467Heterocyclic compounds having nitrogen in the ring having more than two nitrogen atoms in the ring
    • C08K5/3472Five-membered rings
    • C08K5/3475Five-membered rings condensed with carbocyclic rings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/0296Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/032Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/048Encapsulation of modules
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/048Encapsulation of modules
    • H01L31/0481Encapsulation of modules characterised by the composition of the encapsulation material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/12Photovoltaic modules
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/548Amorphous silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention is in the field of photovoltaic modules, and, specifically, the present invention is in the field of thin film photovoltaic modules incorporating a polymer layer and a photovoltaic device on a suitable thin film photovoltaic substrate,
  • photovoltaic (solar) modules there are two common types of photovoltaic (solar) modules in use today.
  • the first type of photovoltaic module utilizes a semiconductor wafer as a substrate and the second type of photovoltaic module utilizes a thin film of semiconductor that is deposited on a suitable substrate.
  • Semiconductor wafer type photovoltaic modules typically comprise the crystalline silicon wafers that are commonly used in various solid state electronic devices, such as computer memory chips and computer processors.
  • Thin film photovoltaics can incorporate one or more conventional
  • thin film photovoltaics are formed using comparatively simple deposition techniques such as sputter coating, physical vapor deposition (PVD), or chemical vapor deposition (CVD).
  • Thin film photovoltaic modules typically incorporate a layer of ethylene vinyl acetate copolymer (EVA) or a layer of polyvinyl butyral)(PVB) to seal and protect the underlying photovoltaic device.
  • EVA ethylene vinyl acetate copolymer
  • PVB polyvinyl butyral
  • poly( vinyl butyral) While it is often preferable to employ polyvinyl butyral), poly( vinyl butyral) has been observed to yellow when in contact with silver-containing elements. Accordingly, what are needed in the art are polyvinyl butyral) compositions that are suitable for stable, long term use in photovoltaic modules having metal elements.
  • the present invention provides a photovoltaic device comprising metal and a poly(vinyl butyral) layer that incorporates a suitable amount of H-benzotriazole.
  • IH-benzotriazole forms a barrier layer at the metaI poly(vinyl butyral) interface, which, for example, unexpectedly virtually eliminated the yellowing of polyvinyl butyral) in photovoltaic devices comprising silver components.
  • Figure 1 represents a schematic cross sectional view of a thin film photovoltaic device of the present invention.
  • Thin film photovoltaic devices of the present invention include a polyvinyl butyral) layer formulated according to the description herein, which provides excellent adhesion, resistivity, sealing, processability, and durability to the photovoltaic device, and which comprises IH-benzotriazole.
  • FIG. 1 One embodiment of a thin film photovoltaic module of the present invention is shown in Figure 1 generally at 10.
  • a photovoltaic device 14 is formed on a base substrate 12, which can be, for example, glass or plastic.
  • a protective substrate 18 is bound to the photovoltaic device 14 with a poly(vinyl butyral) layer 16.
  • IH-benzotriazole refers to the compound shown in the following formula:
  • lH-benzotriazole can be included in the poly( vinyl butyral) layer in any suitable amount, and, in various embodiments, lH-benzotriazole is included, as a weight percent, at 0.001 to 5%, 0.01 to 5%, 0.1 to 5%, 1 to 5%, 2 to 5%, or 0.1 to 0.4 .
  • lH-benzotriazole is preferably included in the poly(vinyl butyral) at the time of formation of a polymer layer through melt compounding the lH-bcnzotriazole with the poly(vinyl butyral) resin and any other additives.
  • IH-benzotriazole can also be provided in salt form, for example, sodium, potassium, and ammonium.
  • lH-benzotriazole is a well known corrosion inhibitor for copper, silver, cobalt, aluminum and zinc. It is commercially available from the PMC Specialties Group, and is sold under the trade name Cobratec-99.
  • Other corrosion inhibitors that are useful in photovoltaic devices of the present invention include: derivatives of lH-benzotriazole such as 5-methyl-lH-benzotriazole, 5-carboxybenzotriazole, and other allcyl derivative of lH-benzotriazole; imidazole and imidazole derivatives such as benzimidizole, 5,6- dimethylbenzimdiazole, 2-mercaptobenzoimidazole, and fatty acid derivatives of 4,5- dihydro-lH-imidazole; thiadiazole and allcyl derivatives of thiadiazole such as 2- mercaptobenzothiazole, l,2-bis(phenylthio)ethane, 2,5-bis(n-octyl
  • additives that can be included in polymer layers of the present invention to improve stability and performance include metal deactivators such as Irganox MD- 1024 ®
  • Anox 70 ® (2,2'-thiodiethylene bis[3-(3,5-di-/-butyl-4-hydroxyphenyl)propionate]
  • lH-benzotriazole and a phenolic antioxidants are incorporated into a poly( vinyl butyral) layer, and, in some embodiments, 1H- benzotriazole and 2,2'-thiodiethylene bis[3-(3,5-di-i-butyl-4-hydroxyphenyl)propionate are incorporated into a polyvinyl butyral) layer.
  • the thin film photovoltaic modules of the present invention utilize a layer of poly( vinyl butyral) as a laminating adhesive that is used to seal the photovoltaic device to a protective substrate, thereby forming the photovoltaic module of the present invention.
  • Poly(vinyl butyral) of the present invention can be produced by acetalization processes, as are known to those skilled in the art (see, for example, U.S. Pat. Nos.
  • Acetal Polymers in Encyclopedia of Polymer Science & Technology, 3 rd edition, Volume 8, pages 381-399, by B. E. Wade (2003) can be used.
  • the aqueous method described therein can be used.
  • Polyvinyl butyral is commercially available in various forms from, for example, Solutia Inc., St. Louis, Mo. as ButvarTM resin.
  • the polyvinyl butyral comprises 10 to 35 weight percent (wt. %) hydroxyl groups calculated as poly( vinyl alcohol), 13 to 30 wt. % hydroxyl groups calculated as poly( vinyl alcohol), or 15 to 22 wt. % hydroxyl groups calculated as polyvinyl alcohol).
  • the polymer layer resin can also comprise less than 15 wt. % residual ester groups, 13 wt. %, 11 wt. %, 9 wt. %, 7 wt. %, 5 wt. %, or less than 3 wt.
  • % residual ester groups calculated as polyvinyl acetate, with the balance being an acetal, preferably butyraldehyde acetal, but optionally including other acetal groups in a minor amount, for example, a 2-ethyl hexanal group (see, for example, U.S. Pat. No. 5, 137,954).
  • the polyvinyl butyral has a molecular weight of at least 30,000, 40,000, 50,000, 55,000, 60,000, 65,000, 70,000, 120,000, 250,000, or at least 350,000 grams per mole (g mole or Daltons).
  • Small quantities of a dialdehyde or trialdehyde can also be added during the acetalization step to increase molecular weight to at least 350,000 g/mole (see, for example, U.S. Pat. Nos. 4,902,464; 4,874,814;
  • molecular weight means the weight average molecular weight.
  • adhesion control agents can be used in polymer layers of the present invention, including sodium acetate, potassium acetate, and magnesium salts.
  • Magnesium salts that can be used with these embodiments of the present invention include, but are not limited to, those disclosed in U.S. Pat. No. 5,728,472, such as magnesium salicylate, magnesium nicotinate, magnesium di-(2-aminobenzoate), magnesium di-(3-hydroxy-2-napthoate), and magnesium bis(2-ethyl butyrate)(chemical abstracts number 79992-76-0).
  • the magnesium salt is magnesium bis(2-ethyl butyrate).
  • the polymer layers can comprise 20 to 60, 25 to 60, 20 to 80, 10 to 70, or 10 to 100 parts plasticizer phr.
  • the plasticizer has a hydrocarbon segment of fewer than 20, fewer than 15, fewer than 12, or fewer than 10 carbon atoms.
  • the amount of plasticizer can be adjusted to affect the glass transition temperature (T g ) of the poly( vinyl butyral) layer. In general, higher amounts of plasticizer are added to decrease the T g .
  • Plasticizers used in the polymer layers of the present invention can include esters of a polybasic acid or a polyhydric alcohol, among others.
  • Suitable plasticizers include, for example, triethylene glycol di-(2- ethylbutyrate), triethylene glycol di-(2-ethylhexanoate), triethylene glycol diheptanoate, tetraethylene glycol diheptanoate, dihexyl adipate, dioctyl adipate, hexyl
  • cyclohexyladipate mixtures of heptyl and nonyl adipates, diisononyl adipate, heptylnonyl adipate, dibutyl sebacate, polymeric plasticizers such as the oil-modified sebacic alkyds, mixtures of phosphates and adipates such as disclosed in U.S. Pat. No. 3,841,890, adipates such as disclosed in U.S. Pat. No. 4,144,217, and mixtures and combinations of the foregoing.
  • Other plasticizers that can be used are mixed adipates made from C 4 to C9 alkyl alcohols and cyclo C 4 to C
  • Cs adipate esters such as hexyl adipate.
  • the plasticizer used is dihexyl adipate and/or methylene glycol di-2 ethylhexanoate.
  • the poly( vinyl butyral) polymer, plasticizer, and any additives can be thermally processed and configured into sheet form according to methods known to those of ordinary skill in the art.
  • One exemplary method of forming a poly(vinyl butyral) sheet comprises extruding molten poly( vinyl butyral) comprising resin, plasticizer, and additives by forcing the melt through a die (for example, a die having an opening that is substantially greater in one dimension than in a perpendicular dimension).
  • Another exemplary method of forming a poly(vinyl butyral) sheet comprises casting a melt from a die onto a roller, solidifying the resin, and subsequently removing the solidified resin as a sheet.
  • the polymer layers can have thicknesses of, for example, 0.1 to 2,5 millimeters, 0.2 to 2.0 millimeters, 0.25 to 1.75 millimeters, and 0.3 to 1.5 millimeters.
  • the poly(vinyl butyral) layers of the present invention can include low molecular weight epoxy additives. Any suitable epoxy agent can be used with the present invention, as are known in the art (see, for example, U.S. Patents 5,529,848 and
  • additives may be incorporated into the polymer sheet to enhance its performance in a final product.
  • additives include, but are not limited to, dyes, pigments, stabilizers (e.g., ultraviolet stabilizers), antioxidants, antiblock agents, additional IR absorbers, flame retardants, combinations of the foregoing additives, and the like, as are known in the art.
  • Typical ultraviolet stabilizers include substituted 2H-benzotriazoles, such as those sold by Ciba Specialty Company under the trade name Tinuvin ® , for example, Tinuvin 328 ® , as shown in Formula II:
  • Base substrates of the present invention can be any suitable substrate onto which the photovoltaic devices of the present invention can be formed.
  • suitable substrate onto which the photovoltaic devices of the present invention can be formed examples include, but are not limited to, glass, and rigid plastic glazing materials which yield "rigid” thin film modules, and thin plastic films such as poly(ethylene terephthalate), polyimides, f!uoropolymers, and the like, which yield “flexible” thin film modules.
  • the base substrate allow transmission of most of the incident radiation in the 350 to 1 ,200 nanometer range, but those of skill in the art will recognize that variations are possible, including variations in which light enters the photovoltaic device through the protective substrate.
  • Thin film photovoltaic devices of the present invention which are shown as element 14 in Figure 1, are formed directly on the base substrate.
  • Typical device fabrication involves the deposition of a first conductive layer, etching of the first conductive layer, deposition and etching of semiconductive layers, deposition of a second conductive layer, etching of the second conductive layer, and application of bus conductors and protective layers, depending on the application.
  • An electrically insulative layer can optionally be formed on the base substrate between the first conductive layer and the base substrate. This optional layer can be, for example, a silicon layer.
  • lH-benzotriazole agent of the present invention can be added to polymer layers for use on photovoltaic devices devoid of any silver
  • lH-benzotriazole is used in a poly(vinyl butyral) layer that is used in a photovoltaic module having a photovoltaic device that comprises silver.
  • silver components include, but are not limited to, conducting layers or elements (such as wire grid) or reflecting layers (see, for example, US2006/0213548).
  • the lH-benzotriazole agent of the present invention can be added to polymer layers for use on photovoltaic devices comprising other metals that are subject to degradation, including, for example, bismuth, copper, cadmium, lead, tin, zinc, gold, indium, palladium, platinum, aluminum, antimony, chromium, iron, nickel, rhodium, tantalum, titanium, or vanadium.
  • the various components of the thin film photovoltaic device can be formed through any suitable method.
  • chemical vapor deposition (CVD), physical vapor deposition (PVD), and/or sputtering can be used.
  • the two conductive layers described above serve as electrodes to carry the current generated by the interposed semiconductor material.
  • One of the electrodes typically is transparent to permit solar radiation to reach the semiconductor material.
  • both conductors can be transparent, or one of the conductors can be reflective, resulting in the reflection of light that has passed through the semiconductor material back into the semiconductor material.
  • Conductive layers can comprise any suitable conductive oxide material, such as tin oxide or zinc oxide, or, if transparency is not critical, such as for "back" electrodes, metal or metal alloy layers, such as those comprising aluminum or silver, can be used.
  • a metal oxide layer can be combined with the metal layer to form an electrode, and the metal oxide layer can be doped with boron or aluminum and deposited using low-pressure chemical vapor deposition.
  • the conductive layers can be, for example, from 0.1 to 10 micrometers in thickness.
  • the photovoltaic region of the thin film photovoltaic device can comprise, for example, hydrogenated amorphous silicon in a conventional PIN or PN structure.
  • the silicon can be typically up to about 500 nanometers in thickness, typically comprising a p-layer having a thickness of 3 to 25 nanometers, an i-layer of 20 to 450 nanometers, and an n-layer of 20 to 40 nanometers.
  • Deposition can be by glow discharge in silane or a mixture of silane and hydrogen, as described, for example, in U.S. Pat. No. 4,064,521.
  • the semiconductor material may be micromorphous silicon, cadmium telluride (CdTe or CdS/CdTe), copper indium diselenide, (CuInSe2, or "CIS", or CdS/CuInSe 2 ), copper indium gallium selenide (CuInGaSe 2 , or "CIGS"), or other photovoltaically active materials.
  • Photovoltaic devices of this invention can have additional semiconductor layers, or combinations of the foregoing semiconductor types, and can be a tandem, triple-junction, or heterojunction structure.
  • Etching of the layers to form the individual components of the device can be performed using any conventional semiconductor fabrication technique, including, but not limited to, silkscreening with resist masks, etching with positive or negative photoresists, mechanical scribing, electrical discharge scribing, chemical etching, or laser etching. Etching of the various layers will result, typically, in the formation of individual photocells within the device. Those devices can be electrically connected to other devices using bus bars that are inserted or formed at any suitable stage of the fabrication process.
  • a protective layer can optionally be formed over the photocells prior to assembly with the poly(vinyl butyral) layer and the protective substrate.
  • the protective layer can be, for example, sputtered aluminum.
  • Protective Substrate Protective substrates of the present invention can be any suitable substrate that can be used to bond to the polymer layer and sufficiently protect the underlying device. Examples include, but are not limited to, glass, rigid plastic, and thin plastic films such as poly(ethylene terephthalate), polyimides, fluoropolymers, and the like.
  • the protective substrate allow transmission of most of the incident radiation in the 350 to 1,200 nanometer range, but those of skill in the art will recognize that variations are possible, including variations in which all of the light entering the photovoltaic device enters through the base substrate.
  • the protective substrate does not need to be transparent, or mostly so, and can be, for example, a reflective film that prevents light from exiting the photovoltaic module through the protective substrate.
  • Final assembly of thin film photovoltaic modules of the present invention involves disposing a poIy(vinyl butyral) layer in contact with a thin film photovoltaic device, with bus bars, if applicable, that has been formed on a base substrate, disposing a protective substrate in contact with the poly( vinyl butyral) layer, and laminating the assembly to form the module.
  • the present invention includes within its scope all photovoltaic devices comprising a silver component and poly(vinyl butyral), including standard (non- thin film) photovoltaic devices, as well as other multilayer laminates comprising a polyvinyl butyral sheet in contact with a degradable metal component (e.g., solar glazings, and mirrors), which are all well known in the art,
  • a degradable metal component e.g., solar glazings, and mirrors
  • the present invention includes polyvinyl butyral) sheets having any of the components described herein incorporating 1 H-benzotriazole and, optionally, any further additives as described herein.
  • the present invention includes a method of making a photovoltaic module, comprising the steps of providing a base substrate, forming a photovoltaic device of the present, invention thereon, and laminating the photovoltaic device to a protective substrate using a poly(vinyl butyral) layer of the present invention.
  • the present invention includes photovoltaic modules comprising polymer layers of the present invention.
  • the sheets are used to laminate a thin-film solar cell (15 15 centimeters).
  • the laminates are exposed to 85°C at 85% relative humidity under a 1 ,000 volt bias for 1 ,000 hours.
  • the yellowness indices of the laminates are measured following the 1,000 hour exposure.
  • the typical yellowness index of the laminates prior to exposure is about 12 (between 1 1 and 13).
  • Tinuvin 123 decanedioic acid
  • Sheets (1.14 mm thick) are prepared as followed in a pilot scale extruder: for every 100 grams of poly( vinyl butyral) resin, 38 grams of triethylene glycol di-(2- ethylhexanoate) as plasticizer, 0.35 grams Tinuvin 328 ® , 0.025 grams magnesium (2- ethylbutyrate), and various additives as shown in Table 2 are added. Glass coated with silver and other layers are used for preparing the poly( vinyl butyral) laminates. The size of the coated glass is 7x9 centimeters. The laminates are tested for 670 hours under 85°C, 85% relative humidity (RH) and 1,000 volts of electrical bias.
  • RH relative humidity
  • the concentration of silver in Control #2 and Sample 4 from Example 1 is determined after the 1000 hour exposure.
  • the samples are delaminated.
  • the plasticizer is extracted from the layers by soaking and stirring in a mixture of 75:25 hexane/ethyl acetate.
  • the recovered poly(vinyl butyral) resin retains the color and is then dissolved acid and analyzed for silver content using a Perkin Elmer Optima 3300 DV instrument.
  • a standard sheet of poly( vinyl butyral) is also analyzed for silver content.
  • the "yellowness index” is measured on intact glass laminates.
  • the sample is measured by hemispherical reflectance with the specular component excluded in accordance with ASTM test method E 1331, and where the clear glass surface faces the light source.
  • the yellowness index value is calculated using the "C, 1931” column of the "Coefficients of the Equations for Yellowness Index” presented within table 1 of the ASTM E 313 "Standard Test Method for Yellowness Index of Plastics" method.
  • Electrode/glass layer/photovoltaic film/electrode/poly(vinyl butyral)/glass layer A voltage of 1 ,000 volts direct current is then applied, which results in a current of about 0.1 milliamps.
  • Tinuvin 328 ® a substituted 2H- benzotriazole derivative shown in Formula II, does not prevent yellowing, highlighting the dramatic success of lH-benzotriazole
  • thin film modules can comprise combinations of poly(vinyl butyral) and photovoltaic elements to form many

Landscapes

  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
EP10712833A 2010-03-19 2010-03-19 Photovoltaic module with stabilized polymer Withdrawn EP2547516A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2010/027976 WO2011115628A1 (en) 2010-03-19 2010-03-19 Photovoltaic module with stabilized polymer

Publications (1)

Publication Number Publication Date
EP2547516A1 true EP2547516A1 (en) 2013-01-23

Family

ID=42470691

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10712833A Withdrawn EP2547516A1 (en) 2010-03-19 2010-03-19 Photovoltaic module with stabilized polymer

Country Status (12)

Country Link
EP (1) EP2547516A1 (zh)
JP (1) JP2013522904A (zh)
KR (1) KR20130010889A (zh)
CN (1) CN102811854A (zh)
AU (1) AU2010348376A1 (zh)
BR (1) BR112012022911A2 (zh)
CA (1) CA2791015A1 (zh)
MX (1) MX2012010354A (zh)
RU (1) RU2528397C2 (zh)
SG (1) SG183430A1 (zh)
WO (1) WO2011115628A1 (zh)
ZA (1) ZA201206288B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110122121A (ko) 2009-01-22 2011-11-09 이 아이 듀폰 디 네모아 앤드 캄파니 태양 전지 모듈에 대한 킬레이트제를 포함하는 폴리(비닐 부티랄) 밀봉제
WO2016007889A1 (en) * 2014-07-10 2016-01-14 Georgia Tech Research Corporation Carbon nanotube compositions
US9822236B2 (en) * 2014-08-21 2017-11-21 Solutia Inc. Polymer interlayers comprising special effect metal pigments
WO2016032837A1 (en) * 2014-08-25 2016-03-03 Solutia Inc. Thin film photovoltaic module with stabilized polymer
EP3185309A1 (en) * 2015-12-23 2017-06-28 Amcor Flexibles Transpac Heat reflective solar module
RU168774U1 (ru) * 2016-03-04 2017-02-17 Валентин Петрович Пивнов Отражающая пленка

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2282026A (en) 1939-04-29 1942-05-05 Du Pont Treatment of polyvinyl acetal resins
US2282057A (en) 1939-04-29 1942-05-05 Du Pont Purification and stabilization of polyvinyl acetal resins
US3841890A (en) 1972-12-07 1974-10-15 Monsanto Co Plasticizer systems for polyvinyl butyral interlayers
US4064521A (en) 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
US4144217A (en) 1978-01-30 1979-03-13 Monsanto Company Plasticizer blends for polyvinyl butyral interlayers
US4814529A (en) 1985-07-02 1989-03-21 Cartier George E Cross-linked polyvinyl butyral
US4902464A (en) 1985-07-02 1990-02-20 Monsanto Company Cross-linked polyvinyl butyral
US4874814A (en) 1985-07-02 1989-10-17 Monsanto Company Cross-linked polyvinyl butyral
US4654179A (en) 1985-07-02 1987-03-31 Monsanto Company Polyvinyl butyral sheet roughness control
RU2030025C1 (ru) * 1989-04-04 1995-02-27 Научно-производственное предприятие "Сатурн" Фотоэлектрический модуль
US5013779A (en) 1989-12-08 1991-05-07 Monsanto Company Plasticized polyvinyl butyral and interlayer thereof
US5137954A (en) 1991-09-30 1992-08-11 Monsanto Company Polyvinyl butyral sheet
DE4215141C1 (de) * 1992-05-08 1993-12-09 Hoechst Ag Polyvinylbutyrale mit verbesserter Thermostabilität und Lichtbeständigkeit
US5631315A (en) 1993-07-01 1997-05-20 Monsanto Company Plasticized polyvinyl butyral sheet containing epoxy resin
DE4324167A1 (de) * 1993-07-19 1995-01-26 Hoechst Ag Polyvinylbutyralfolien mit verbesserten optischen Eigenschaften
JPH07302926A (ja) * 1994-04-30 1995-11-14 Canon Inc 太陽電池モジュール
US5728472A (en) 1996-11-14 1998-03-17 Monsanto Company Control of adhesion of polyvinyl butyral sheet to glass
EP1061589A3 (en) 1999-06-14 2008-08-06 Kaneka Corporation Method of fabricating thin-film photovoltaic module
AU777360B2 (en) 1999-10-27 2004-10-14 Kaneka Corporation Method of producing a thin-film photovoltaic device
JP2001345273A (ja) 2000-05-31 2001-12-14 Canon Inc シリコン系薄膜の形成方法、シリコン系薄膜及び光起電力素子
JP4433131B2 (ja) 2001-03-22 2010-03-17 キヤノン株式会社 シリコン系薄膜の形成方法
AU2002363298A1 (en) 2001-07-20 2003-05-12 Itn Energy Systems, Inc. Apparatus and method of production of thin film photovoltaic modules
US7259321B2 (en) 2002-01-07 2007-08-21 Bp Corporation North America Inc. Method of manufacturing thin film photovoltaic modules
WO2003096080A2 (en) * 2002-05-08 2003-11-20 Target Technology Company, Llc. Silver alloy thin film reflector and transparent electrical conductor
BR122014016215B1 (pt) * 2003-12-26 2016-07-26 Sekisui Chemical Co Ltd filme intercamadas para vidro laminado e vidro laminado
WO2005121227A1 (ja) * 2004-06-08 2005-12-22 Bridgestone Corporation 樹脂フィルム
US8716592B2 (en) 2004-07-12 2014-05-06 Quanex Ig Systems, Inc. Thin film photovoltaic assembly method
CN101010290B (zh) * 2004-09-06 2011-08-03 日本化药株式会社 二亚铵化合物及其用途
US7759158B2 (en) 2005-03-22 2010-07-20 Applied Materials, Inc. Scalable photovoltaic cell and solar panel manufacturing with improved wiring
US20070235073A1 (en) 2006-04-10 2007-10-11 Mario Napolitano Method of fabricating a thin film photovoltaic cell on a transparent substrate
US20080128018A1 (en) * 2006-12-04 2008-06-05 Richard Allen Hayes Solar cells which include the use of certain poly(vinyl butyral)/film bilayer encapsulant layers with a low blocking tendency and a simplified process to produce thereof
US20090250100A1 (en) * 2008-04-04 2009-10-08 E.I. Du Pont De Nemours And Company Solar cell modules comprising high melt flow poly(vinyl butyral) encapsulants
US20100180940A1 (en) * 2009-01-20 2010-07-22 Weihong Cui Photovoltaic Module With Stabilized Polymer
WO2010085664A1 (en) * 2009-01-22 2010-07-29 E. I. Du Pont De Nemours And Company Solar cell modules with poly(vinyl butyral) encapsulant comprising unsaturated heterocyclic compound

Also Published As

Publication number Publication date
RU2528397C2 (ru) 2014-09-20
CA2791015A1 (en) 2011-09-22
RU2012144439A (ru) 2014-04-27
ZA201206288B (en) 2013-05-29
MX2012010354A (es) 2012-11-16
BR112012022911A2 (pt) 2019-09-24
SG183430A1 (en) 2012-09-27
JP2013522904A (ja) 2013-06-13
WO2011115628A1 (en) 2011-09-22
AU2010348376A1 (en) 2012-09-27
KR20130010889A (ko) 2013-01-29
CN102811854A (zh) 2012-12-05

Similar Documents

Publication Publication Date Title
US20140360582A1 (en) Thin film photovoltaic module with stabilized polymer
US20140360574A1 (en) Thin film photovoltaic module with stabilized polymer
US20090293952A1 (en) Thin Film Photovoltaic Module
JP5231686B2 (ja) 太陽電池用封止材および合わせガラス用中間膜
EP2547516A1 (en) Photovoltaic module with stabilized polymer
JP2013511156A (ja) 還元剤を含んでなるポリマー封入材による太陽電池モジュール
JP2012516060A5 (zh)
JP2012516061A (ja) 太陽電池モジュール用のキレート剤を含むポリ(ビニルブチラール)封止材
JP2012516060A (ja) 太陽電池モジュール用のヒンダードアミン類を含むポリ(ビニルブチラール)封止材
JP2012516061A5 (zh)
WO2016032837A1 (en) Thin film photovoltaic module with stabilized polymer
AU2015261642A1 (en) Photovoltaic module with stabilized polymer
TWI498213B (zh) 具有穩定化聚合物之光伏打模組
US20120160304A1 (en) Solar cell modules with poly(vinyl butyral) encapsulant comprising aldehyde scavengers
US8124868B2 (en) Thin film photovoltaic module with contoured deairing substrate
KR101220224B1 (ko) 반사율이 우수한 폴리비닐아세탈 필름 및 이의 제조방법
EP2547517A1 (en) Thin film photovoltaic module with contoured deairing substrate

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20120821

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
17Q First examination report despatched

Effective date: 20140212

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20170421