Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
  • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
  • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
  • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
  • B32B17/1055—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
  • B32B17/10678—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer comprising UV absorbers or stabilizers, e.g. antioxidants
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
  • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
  • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
  • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
  • B32B17/1055—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
  • B32B17/10761—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer containing vinyl acetal
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
  • C08K5/00—Use of organic ingredients
  • C08K5/16—Nitrogen-containing compounds
  • C08K5/34—Heterocyclic compounds having nitrogen in the ring
  • C08K5/3467—Heterocyclic compounds having nitrogen in the ring having more than two nitrogen atoms in the ring
  • C08K5/3472—Five-membered rings
  • C08K5/3475—Five-membered rings condensed with carbocyclic rings
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
  • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
  • H01L31/0264—Inorganic materials
  • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
  • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
  • H01L31/0264—Inorganic materials
  • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
  • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
  • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
  • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
  • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
  • H01L31/042—PV modules or arrays of single PV cells
  • H01L31/048—Encapsulation of modules
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
  • H01L31/042—PV modules or arrays of single PV cells
  • H01L31/048—Encapsulation of modules
  • H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
  • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
  • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B2457/00—Electrical equipment
  • B32B2457/12—Photovoltaic modules
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/541—CuInSe2 material PV cells
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/548—Amorphous silicon PV cells
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
  • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
  • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

• the present invention is in the field of photovoltaic modules, and, specifically, the present invention is in the field of thin film photovoltaic modules incorporating a polymer layer and a photovoltaic device on a suitable thin film photovoltaic substrate,
• photovoltaic (solar) modules there are two common types of photovoltaic (solar) modules in use today.
• the first type of photovoltaic module utilizes a semiconductor wafer as a substrate and the second type of photovoltaic module utilizes a thin film of semiconductor that is deposited on a suitable substrate.
• Semiconductor wafer type photovoltaic modules typically comprise the crystalline silicon wafers that are commonly used in various solid state electronic devices, such as computer memory chips and computer processors.
• Thin film photovoltaics can incorporate one or more conventional
• thin film photovoltaics are formed using comparatively simple deposition techniques such as sputter coating, physical vapor deposition (PVD), or chemical vapor deposition (CVD).
• Thin film photovoltaic modules typically incorporate a layer of ethylene vinyl acetate copolymer (EVA) or a layer of polyvinyl butyral)(PVB) to seal and protect the underlying photovoltaic device.
• EVA ethylene vinyl acetate copolymer
• PVB polyvinyl butyral
• poly( vinyl butyral) While it is often preferable to employ polyvinyl butyral), poly( vinyl butyral) has been observed to yellow when in contact with silver-containing elements. Accordingly, what are needed in the art are polyvinyl butyral) compositions that are suitable for stable, long term use in photovoltaic modules having metal elements.
• the present invention provides a photovoltaic device comprising metal and a poly(vinyl butyral) layer that incorporates a suitable amount of H-benzotriazole.
• IH-benzotriazole forms a barrier layer at the metaI poly(vinyl butyral) interface, which, for example, unexpectedly virtually eliminated the yellowing of polyvinyl butyral) in photovoltaic devices comprising silver components.
• Figure 1 represents a schematic cross sectional view of a thin film photovoltaic device of the present invention.
• Thin film photovoltaic devices of the present invention include a polyvinyl butyral) layer formulated according to the description herein, which provides excellent adhesion, resistivity, sealing, processability, and durability to the photovoltaic device, and which comprises IH-benzotriazole.
• FIG. 1 One embodiment of a thin film photovoltaic module of the present invention is shown in Figure 1 generally at 10.
• a photovoltaic device 14 is formed on a base substrate 12, which can be, for example, glass or plastic.
• a protective substrate 18 is bound to the photovoltaic device 14 with a poly(vinyl butyral) layer 16.
• IH-benzotriazole refers to the compound shown in the following formula:
• lH-benzotriazole can be included in the poly( vinyl butyral) layer in any suitable amount, and, in various embodiments, lH-benzotriazole is included, as a weight percent, at 0.001 to 5%, 0.01 to 5%, 0.1 to 5%, 1 to 5%, 2 to 5%, or 0.1 to 0.4 .
• lH-benzotriazole is preferably included in the poly(vinyl butyral) at the time of formation of a polymer layer through melt compounding the lH-bcnzotriazole with the poly(vinyl butyral) resin and any other additives.
• IH-benzotriazole can also be provided in salt form, for example, sodium, potassium, and ammonium.
• lH-benzotriazole is a well known corrosion inhibitor for copper, silver, cobalt, aluminum and zinc. It is commercially available from the PMC Specialties Group, and is sold under the trade name Cobratec-99.
• Other corrosion inhibitors that are useful in photovoltaic devices of the present invention include: derivatives of lH-benzotriazole such as 5-methyl-lH-benzotriazole, 5-carboxybenzotriazole, and other allcyl derivative of lH-benzotriazole; imidazole and imidazole derivatives such as benzimidizole, 5,6- dimethylbenzimdiazole, 2-mercaptobenzoimidazole, and fatty acid derivatives of 4,5- dihydro-lH-imidazole; thiadiazole and allcyl derivatives of thiadiazole such as 2- mercaptobenzothiazole, l,2-bis(phenylthio)ethane, 2,5-bis(n-octyl
• additives that can be included in polymer layers of the present invention to improve stability and performance include metal deactivators such as Irganox MD- 1024 ®
• Anox 70 ® (2,2'-thiodiethylene bis[3-(3,5-di-/-butyl-4-hydroxyphenyl)propionate]
• lH-benzotriazole and a phenolic antioxidants are incorporated into a poly( vinyl butyral) layer, and, in some embodiments, 1H- benzotriazole and 2,2'-thiodiethylene bis[3-(3,5-di-i-butyl-4-hydroxyphenyl)propionate are incorporated into a polyvinyl butyral) layer.
• the thin film photovoltaic modules of the present invention utilize a layer of poly( vinyl butyral) as a laminating adhesive that is used to seal the photovoltaic device to a protective substrate, thereby forming the photovoltaic module of the present invention.
• Poly(vinyl butyral) of the present invention can be produced by acetalization processes, as are known to those skilled in the art (see, for example, U.S. Pat. Nos.
• Acetal Polymers in Encyclopedia of Polymer Science & Technology, 3 rd edition, Volume 8, pages 381-399, by B. E. Wade (2003) can be used.
• the aqueous method described therein can be used.
• Polyvinyl butyral is commercially available in various forms from, for example, Solutia Inc., St. Louis, Mo. as ButvarTM resin.
• the polyvinyl butyral comprises 10 to 35 weight percent (wt. %) hydroxyl groups calculated as poly( vinyl alcohol), 13 to 30 wt. % hydroxyl groups calculated as poly( vinyl alcohol), or 15 to 22 wt. % hydroxyl groups calculated as polyvinyl alcohol).
• the polymer layer resin can also comprise less than 15 wt. % residual ester groups, 13 wt. %, 11 wt. %, 9 wt. %, 7 wt. %, 5 wt. %, or less than 3 wt.
• % residual ester groups calculated as polyvinyl acetate, with the balance being an acetal, preferably butyraldehyde acetal, but optionally including other acetal groups in a minor amount, for example, a 2-ethyl hexanal group (see, for example, U.S. Pat. No. 5, 137,954).
• the polyvinyl butyral has a molecular weight of at least 30,000, 40,000, 50,000, 55,000, 60,000, 65,000, 70,000, 120,000, 250,000, or at least 350,000 grams per mole (g mole or Daltons).
• Small quantities of a dialdehyde or trialdehyde can also be added during the acetalization step to increase molecular weight to at least 350,000 g/mole (see, for example, U.S. Pat. Nos. 4,902,464; 4,874,814;
• molecular weight means the weight average molecular weight.
• adhesion control agents can be used in polymer layers of the present invention, including sodium acetate, potassium acetate, and magnesium salts.
• Magnesium salts that can be used with these embodiments of the present invention include, but are not limited to, those disclosed in U.S. Pat. No. 5,728,472, such as magnesium salicylate, magnesium nicotinate, magnesium di-(2-aminobenzoate), magnesium di-(3-hydroxy-2-napthoate), and magnesium bis(2-ethyl butyrate)(chemical abstracts number 79992-76-0).
• the magnesium salt is magnesium bis(2-ethyl butyrate).
• the polymer layers can comprise 20 to 60, 25 to 60, 20 to 80, 10 to 70, or 10 to 100 parts plasticizer phr.
• the plasticizer has a hydrocarbon segment of fewer than 20, fewer than 15, fewer than 12, or fewer than 10 carbon atoms.
• the amount of plasticizer can be adjusted to affect the glass transition temperature (T g ) of the poly( vinyl butyral) layer. In general, higher amounts of plasticizer are added to decrease the T g .
• Plasticizers used in the polymer layers of the present invention can include esters of a polybasic acid or a polyhydric alcohol, among others.
• Suitable plasticizers include, for example, triethylene glycol di-(2- ethylbutyrate), triethylene glycol di-(2-ethylhexanoate), triethylene glycol diheptanoate, tetraethylene glycol diheptanoate, dihexyl adipate, dioctyl adipate, hexyl
• cyclohexyladipate mixtures of heptyl and nonyl adipates, diisononyl adipate, heptylnonyl adipate, dibutyl sebacate, polymeric plasticizers such as the oil-modified sebacic alkyds, mixtures of phosphates and adipates such as disclosed in U.S. Pat. No. 3,841,890, adipates such as disclosed in U.S. Pat. No. 4,144,217, and mixtures and combinations of the foregoing.
• Other plasticizers that can be used are mixed adipates made from C 4 to C9 alkyl alcohols and cyclo C 4 to C
• Cs adipate esters such as hexyl adipate.
• the plasticizer used is dihexyl adipate and/or methylene glycol di-2 ethylhexanoate.
• the poly( vinyl butyral) polymer, plasticizer, and any additives can be thermally processed and configured into sheet form according to methods known to those of ordinary skill in the art.
• One exemplary method of forming a poly(vinyl butyral) sheet comprises extruding molten poly( vinyl butyral) comprising resin, plasticizer, and additives by forcing the melt through a die (for example, a die having an opening that is substantially greater in one dimension than in a perpendicular dimension).
• Another exemplary method of forming a poly(vinyl butyral) sheet comprises casting a melt from a die onto a roller, solidifying the resin, and subsequently removing the solidified resin as a sheet.
• the polymer layers can have thicknesses of, for example, 0.1 to 2,5 millimeters, 0.2 to 2.0 millimeters, 0.25 to 1.75 millimeters, and 0.3 to 1.5 millimeters.
• the poly(vinyl butyral) layers of the present invention can include low molecular weight epoxy additives. Any suitable epoxy agent can be used with the present invention, as are known in the art (see, for example, U.S. Patents 5,529,848 and
• additives may be incorporated into the polymer sheet to enhance its performance in a final product.
• additives include, but are not limited to, dyes, pigments, stabilizers (e.g., ultraviolet stabilizers), antioxidants, antiblock agents, additional IR absorbers, flame retardants, combinations of the foregoing additives, and the like, as are known in the art.
• Typical ultraviolet stabilizers include substituted 2H-benzotriazoles, such as those sold by Ciba Specialty Company under the trade name Tinuvin ® , for example, Tinuvin 328 ® , as shown in Formula II:
• Base substrates of the present invention can be any suitable substrate onto which the photovoltaic devices of the present invention can be formed.
• suitable substrate onto which the photovoltaic devices of the present invention can be formed examples include, but are not limited to, glass, and rigid plastic glazing materials which yield "rigid” thin film modules, and thin plastic films such as poly(ethylene terephthalate), polyimides, f!uoropolymers, and the like, which yield “flexible” thin film modules.
• the base substrate allow transmission of most of the incident radiation in the 350 to 1 ,200 nanometer range, but those of skill in the art will recognize that variations are possible, including variations in which light enters the photovoltaic device through the protective substrate.
• Thin film photovoltaic devices of the present invention which are shown as element 14 in Figure 1, are formed directly on the base substrate.
• Typical device fabrication involves the deposition of a first conductive layer, etching of the first conductive layer, deposition and etching of semiconductive layers, deposition of a second conductive layer, etching of the second conductive layer, and application of bus conductors and protective layers, depending on the application.
• An electrically insulative layer can optionally be formed on the base substrate between the first conductive layer and the base substrate. This optional layer can be, for example, a silicon layer.
• lH-benzotriazole agent of the present invention can be added to polymer layers for use on photovoltaic devices devoid of any silver
• lH-benzotriazole is used in a poly(vinyl butyral) layer that is used in a photovoltaic module having a photovoltaic device that comprises silver.
• silver components include, but are not limited to, conducting layers or elements (such as wire grid) or reflecting layers (see, for example, US2006/0213548).
• the lH-benzotriazole agent of the present invention can be added to polymer layers for use on photovoltaic devices comprising other metals that are subject to degradation, including, for example, bismuth, copper, cadmium, lead, tin, zinc, gold, indium, palladium, platinum, aluminum, antimony, chromium, iron, nickel, rhodium, tantalum, titanium, or vanadium.
• the various components of the thin film photovoltaic device can be formed through any suitable method.
• chemical vapor deposition (CVD), physical vapor deposition (PVD), and/or sputtering can be used.
• the two conductive layers described above serve as electrodes to carry the current generated by the interposed semiconductor material.
• One of the electrodes typically is transparent to permit solar radiation to reach the semiconductor material.
• both conductors can be transparent, or one of the conductors can be reflective, resulting in the reflection of light that has passed through the semiconductor material back into the semiconductor material.
• Conductive layers can comprise any suitable conductive oxide material, such as tin oxide or zinc oxide, or, if transparency is not critical, such as for "back" electrodes, metal or metal alloy layers, such as those comprising aluminum or silver, can be used.
• a metal oxide layer can be combined with the metal layer to form an electrode, and the metal oxide layer can be doped with boron or aluminum and deposited using low-pressure chemical vapor deposition.
• the conductive layers can be, for example, from 0.1 to 10 micrometers in thickness.
• the photovoltaic region of the thin film photovoltaic device can comprise, for example, hydrogenated amorphous silicon in a conventional PIN or PN structure.
• the silicon can be typically up to about 500 nanometers in thickness, typically comprising a p-layer having a thickness of 3 to 25 nanometers, an i-layer of 20 to 450 nanometers, and an n-layer of 20 to 40 nanometers.
• Deposition can be by glow discharge in silane or a mixture of silane and hydrogen, as described, for example, in U.S. Pat. No. 4,064,521.
• the semiconductor material may be micromorphous silicon, cadmium telluride (CdTe or CdS/CdTe), copper indium diselenide, (CuInSe2, or "CIS", or CdS/CuInSe 2 ), copper indium gallium selenide (CuInGaSe 2 , or "CIGS"), or other photovoltaically active materials.
• Photovoltaic devices of this invention can have additional semiconductor layers, or combinations of the foregoing semiconductor types, and can be a tandem, triple-junction, or heterojunction structure.
• Etching of the layers to form the individual components of the device can be performed using any conventional semiconductor fabrication technique, including, but not limited to, silkscreening with resist masks, etching with positive or negative photoresists, mechanical scribing, electrical discharge scribing, chemical etching, or laser etching. Etching of the various layers will result, typically, in the formation of individual photocells within the device. Those devices can be electrically connected to other devices using bus bars that are inserted or formed at any suitable stage of the fabrication process.
• a protective layer can optionally be formed over the photocells prior to assembly with the poly(vinyl butyral) layer and the protective substrate.
• the protective layer can be, for example, sputtered aluminum.
• Protective Substrate Protective substrates of the present invention can be any suitable substrate that can be used to bond to the polymer layer and sufficiently protect the underlying device. Examples include, but are not limited to, glass, rigid plastic, and thin plastic films such as poly(ethylene terephthalate), polyimides, fluoropolymers, and the like.
• the protective substrate allow transmission of most of the incident radiation in the 350 to 1,200 nanometer range, but those of skill in the art will recognize that variations are possible, including variations in which all of the light entering the photovoltaic device enters through the base substrate.
• the protective substrate does not need to be transparent, or mostly so, and can be, for example, a reflective film that prevents light from exiting the photovoltaic module through the protective substrate.
• Final assembly of thin film photovoltaic modules of the present invention involves disposing a poIy(vinyl butyral) layer in contact with a thin film photovoltaic device, with bus bars, if applicable, that has been formed on a base substrate, disposing a protective substrate in contact with the poly( vinyl butyral) layer, and laminating the assembly to form the module.
• the present invention includes within its scope all photovoltaic devices comprising a silver component and poly(vinyl butyral), including standard (non- thin film) photovoltaic devices, as well as other multilayer laminates comprising a polyvinyl butyral sheet in contact with a degradable metal component (e.g., solar glazings, and mirrors), which are all well known in the art,
• a degradable metal component e.g., solar glazings, and mirrors
• the present invention includes polyvinyl butyral) sheets having any of the components described herein incorporating 1 H-benzotriazole and, optionally, any further additives as described herein.
• the present invention includes a method of making a photovoltaic module, comprising the steps of providing a base substrate, forming a photovoltaic device of the present, invention thereon, and laminating the photovoltaic device to a protective substrate using a poly(vinyl butyral) layer of the present invention.
• the present invention includes photovoltaic modules comprising polymer layers of the present invention.
• the sheets are used to laminate a thin-film solar cell (15 15 centimeters).
• the laminates are exposed to 85°C at 85% relative humidity under a 1 ,000 volt bias for 1 ,000 hours.
• the yellowness indices of the laminates are measured following the 1,000 hour exposure.
• the typical yellowness index of the laminates prior to exposure is about 12 (between 1 1 and 13).
• Tinuvin 123 decanedioic acid
• Sheets (1.14 mm thick) are prepared as followed in a pilot scale extruder: for every 100 grams of poly( vinyl butyral) resin, 38 grams of triethylene glycol di-(2- ethylhexanoate) as plasticizer, 0.35 grams Tinuvin 328 ® , 0.025 grams magnesium (2- ethylbutyrate), and various additives as shown in Table 2 are added. Glass coated with silver and other layers are used for preparing the poly( vinyl butyral) laminates. The size of the coated glass is 7x9 centimeters. The laminates are tested for 670 hours under 85°C, 85% relative humidity (RH) and 1,000 volts of electrical bias.
• RH relative humidity
• the concentration of silver in Control #2 and Sample 4 from Example 1 is determined after the 1000 hour exposure.
• the samples are delaminated.
• the plasticizer is extracted from the layers by soaking and stirring in a mixture of 75:25 hexane/ethyl acetate.
• the recovered poly(vinyl butyral) resin retains the color and is then dissolved acid and analyzed for silver content using a Perkin Elmer Optima 3300 DV instrument.
• a standard sheet of poly( vinyl butyral) is also analyzed for silver content.
• the "yellowness index” is measured on intact glass laminates.
• the sample is measured by hemispherical reflectance with the specular component excluded in accordance with ASTM test method E 1331, and where the clear glass surface faces the light source.
• the yellowness index value is calculated using the "C, 1931” column of the "Coefficients of the Equations for Yellowness Index” presented within table 1 of the ASTM E 313 "Standard Test Method for Yellowness Index of Plastics" method.
• Electrode/glass layer/photovoltaic film/electrode/poly(vinyl butyral)/glass layer A voltage of 1 ,000 volts direct current is then applied, which results in a current of about 0.1 milliamps.
• Tinuvin 328 ® a substituted 2H- benzotriazole derivative shown in Formula II, does not prevent yellowing, highlighting the dramatic success of lH-benzotriazole
• thin film modules can comprise combinations of poly(vinyl butyral) and photovoltaic elements to form many

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