CN102811854A - 具有稳定化聚合物的光伏打模块 - Google Patents

具有稳定化聚合物的光伏打模块 Download PDF

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CN102811854A
CN102811854A CN2010800655874A CN201080065587A CN102811854A CN 102811854 A CN102811854 A CN 102811854A CN 2010800655874 A CN2010800655874 A CN 2010800655874A CN 201080065587 A CN201080065587 A CN 201080065587A CN 102811854 A CN102811854 A CN 102811854A
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崔卫红
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Abstract

本发明提供一种光伏打装置，其包含金属和并入适宜量的1H-苯并三唑的聚(乙烯缩丁醛)层。当将电偏压施加至所述光伏打装置时，1H-苯并三唑在金属/聚(乙烯缩丁醛)界面处形成阻挡层，所述阻挡层例如出乎意料地实质上消除在包含银组件的光伏打装置中的聚(乙烯缩丁醛)变黄。

Description

具有稳定化聚合物的光伏打模块
技术领域
本发明是属于光伏打模块领域，且具体来说，本发明是属于在适宜薄膜光伏打基材上并入聚合物层和光伏打装置的薄膜光伏打模块领域。
发明背景
目前正在使用的有两种通用类型的光伏打（太阳能）模块。第一类光伏打模块采用半导体晶片作为基材和第二类光伏打模块采用沉积在适宜基材上的半导体薄膜。
半导体晶片型光伏打模块常包含晶体硅晶片，晶体硅晶片常用在各种固态电子装置，如计算机记忆芯片和计算机处理器中。
薄膜光伏打可以在适宜基材上并入一或多种惯用半导体，如非晶体硅。与由锭块切割出晶片的晶片应用不同，薄膜光伏打是利用相对简单的沉积技术，如溅射涂覆、物理气相沉积（PVD）或化学气相沉积（CVD）形成。
薄膜光伏打模块常并入乙烯乙酸乙烯酯共聚物（EVA）层或聚(乙烯缩丁醛)（PVB）层以密封和保护底下的光伏打装置。光伏打模块的长期可靠运作当然是至关重要的，且因此聚合物层稳定性是任何特定光伏打装置的关键因素。
虽然EVA已广泛用于光伏打模块中，但是因为聚(乙烯缩丁醛)不存在与EVA相同的缺点，如乙酸降解，所以使用聚(乙烯缩丁醛)十分适宜，正如美国专利公开2007/0259998中所详细论述。
虽然经常优选采用聚(乙烯缩丁醛)，但是已经发现当与含银元件接触时，聚(乙烯缩丁醛)会变黄。
因此，在本技术中需要适合在具有金属元件的光伏打模块中稳定且长期使用的聚(乙烯缩丁醛)组合物。
发明概要
本发明提供一种光伏打装置，其包括金属和并入适宜量的1H-苯并三唑的聚(乙烯缩丁醛)层。当将电偏压施加至光伏打装置时，1H-苯并三唑在金属/聚(乙烯缩丁醛)界面处形成阻挡层，阻挡层例如出乎意料地实质上消除在包含银组件的光伏打装置中的聚(乙烯缩丁醛)变黄。
附图简述
图1代表本发明的薄膜光伏打装置的横截面示意图。
具体实施方式
本发明的薄膜光伏打装置包含根据本文说明调配而成的聚(乙烯缩丁醛)层，聚(乙烯缩丁醛)层为光伏打装置提供优良粘着性、电阻率、密封、可加工性和耐久性，且包含1H-苯并三唑。
本发明薄膜光伏打模块的一个实施方案大体上以10显示在图1中。如图1中所示，光伏打装置14是在基底基材12上形成，基底基材可以是(例如)玻璃或塑料。保护基材18是通过聚(乙烯缩丁醛)层16粘合至光伏打装置14。
如本文中所使用，“1H-苯并三唑”是指下式中所示的化合物：
Figure BDA00002159592700021
1H-苯并三唑能够以任何适宜含量包含于聚(乙烯缩丁醛)层中，且在各个实施方案中，所包含的1H-苯并三唑的重量百分比是0.001至5%、0.01至5%、0.1至5%、1至5%、2至5%或0.1至0.4%。
1H-苯并三唑优选是在1H-苯并三唑与聚(乙烯缩丁醛)树脂和任何其它添加剂透过熔融化合形成聚合物层的同时包含于聚(乙烯缩丁醛)中。1H-苯并三唑也能够以盐形式提供，例如，钠、钾和铵盐。
1H-苯并三唑是熟知的铜、银、钴、铝和锌的腐蚀抑制剂。1H-苯并三唑是自PMC Specialties Group购置，且是以商标名Cobratec-99贩售。可用于本发明的光伏打装置中的其它腐蚀抑制剂包括：1H-苯并三唑的衍生物，如5-甲基-1H-苯并三唑、5-羧基苯并三唑和1H-苯并三唑的其它烷基衍生物；咪唑和咪唑衍生物，如苯并咪唑、5,6-二甲基苯并咪唑、2-巯基苯并咪唑，和4,5-二氢-1H-咪唑的脂肪酸衍生物；噻二唑和噻二唑的烷基衍生物，如2-巯基本并噻唑、1,2-双(苯硫基)乙烷、2,5-双(正辛基二硫)-1,3,4-噻二唑、2-胺基、5-巯基、1,3,4-噻二唑、2-巯基嘧啶、2-巯基苯并恶唑；组胺；组胺酸；和2-胺基嘧啶。
其它添加剂
可以包含于本发明聚合物层中以改善稳定性和性能的其它添加剂包括金属钝化剂(如Irganox MD-（CAS 32687-78-8）和Naugard XL-
Figure BDA00002159592700032
（CAS 70331-94-1）)、受阻胺光稳定剂(如Tinuvin（CAS129757-67-1）)和酚类抗氧化剂(如Anox（双[3-(3,5-二第三丁基-4-羟基苯基)丙酸2,2’-硫代二乙二酯]CAS 41484-35-9）)。
预期任一以上聚合物稳定剂与苯并三唑的组合将使在聚(乙烯缩丁醛)-金属界面处和聚合物内部的聚(乙烯缩丁醛)更稳定。实验数据已表明，将苯并三唑和Anox
Figure BDA00002159592700035
添加至聚(乙烯缩丁醛)调配物中确实会进一步减少聚合物褪色并保护薄膜太阳能面板的结构。在本发明的各个实施方案中，将1H-苯并三唑和酚类抗氧化剂并入聚(乙烯缩丁醛)层中，且在某些实施方案中，将1H-苯并三唑和双[3-(3,5-二叔丁基-4-羟基苯基)丙酸2,2’-硫代二乙二酯]并入聚(乙烯缩丁醛)层中。
聚(乙烯缩丁醛)层
本发明的薄膜光伏打模块采用聚(乙烯缩丁醛)层作为层压粘着材料，用来将光伏打装置密封至保护基材，从而形成本发明的光伏打模块。
本发明的聚(乙烯缩丁醛)可以透过所属领域技术人员已知的缩醛化方法制备（参见，例如，美国专利2,282,057和2,282,026）。在一个实施方案中，可以使用在B.E.Wade的Encyclopedia of Polymer Science&Technology，第3版,第8卷，第381至399页（2003）中的乙烯缩醛聚合物（Vinyl Acetal Polymers）中描述的溶剂方法。在另一实施方案中，可以使用其中所描述的水性方法。可以各种形式购得聚(乙烯缩丁醛)，例如以ButvarTM树脂从Solutia Inc.,St.louis,Mo.购得。
在各个实施方案中，聚(乙烯缩丁醛)包含以聚(乙烯醇)算得的10至35重量百分比（重量%）的羟基；以聚(乙烯醇)算得的13至30重量%的羟基，或以聚(乙烯醇)算得的15至22重量%的羟基。聚合物层树脂也可以包含少于15重量%的残余酯基团、以聚乙酸乙烯酯算得的13重量%、11重量%、9重量%、7重量%、5重量%或少于3重量%的残余酯基团，剩余的是缩醛，优选是丁醛缩醛，但视情况包含少量其它缩醛基团，例如，2-乙基己醛基团（参见例如美国专利5,137,954）。
在各个实施方案中，聚(乙烯缩丁醛)具有至少30,000、40,000、50,000、55,000、60,000、65,000、70,000、120,000、250,000或至少350,000克/摩尔（g/摩尔或道尔顿）的分子量。在缩醛化步骤期间也可以添加少量二醛或三醛以增大分子量至至少350,000g/摩尔（参见例如美国专利4,902,464；4,874,814；4,814,529；和4,654,179）。如本文中所使用，术语“分子量”意指重量平均分子量。
可以在本发明的聚合物层中使用各种粘性控制剂，包括乙酸钠、乙酸钾和镁盐。可以用于本发明的这些实施方案中的镁盐包括但不限于公开在美国专利5,728,472中的镁盐，如水杨酸镁、烟酸镁、二-(2-胺基苯甲酸)镁、二-(3-羟基-2-萘甲酸)镁和双(2-乙基丁酸)镁（化学摘要79992-76-0）。在本发明的各个实施方案中，镁盐是双(2-乙基丁酸)镁。
在本发明聚合物层的各个实施方案中，聚合物层可以包含20至60、25至60、20至80、10至70或10至100份增塑剂phr。当然，如果适合特定应用，也可以使用其它量。在某些实施方案中，增塑剂具有少于20、少于15、少于12或少于10个碳原子的烃片段。可以调整增塑剂的含量以影响聚(乙烯缩丁醛)层的玻璃化转变温度（Tg）。通常，添加较大量的增塑剂以降低Tg。
可以将任何适宜的增塑剂添加至本发明的聚合物树脂以形成聚合物层。用于本发明的聚合物层中的增塑剂可以尤其包括多元酸酯或多元醇酯。适宜增塑剂包括例如三乙二醇二-(2-乙基丁酸酯)、三乙二醇二-(2-乙基己酸酯)、三乙二醇二庚酸酯、四乙二醇二庚酸酯、己二酸二己酯、己二酸二辛酯、己二酸己酯环己酯、己二酸庚酯与己二酸壬酯的混合物、己二酸二异壬酯、己二酸庚酯壬酯、癸二酸二丁酯；聚合增塑剂，如油改性的癸二酸醇酸缩合物、公开在美国专利3,841,890中的磷酸酯与己二酸酯的混合物、公开在美国专利4,144,217中的己二酸酯和以上物质的混合物和组合。可以使用的其它增塑剂是由C4至C9烷基醇与环C4至C10醇制成的混合己二酸酯，公开在美国专利5,013,779中，和C6至C8己二酸酯，如己二酸己酯。在各个实施方案中，所使用的增塑剂是己二酸二己酯和/或三乙二醇二-2-乙基己酸酯。
聚(乙烯缩丁醛)聚合物、增塑剂和任何添加剂可以根据所属领域技术人员已知的方法经热加工并成形为片形式。形成聚(乙烯缩丁醛)片的一种示例性方法包括挤出包含树脂、增塑剂和添加剂的熔融聚(乙烯缩丁醛)，实施为强制熔融物通过模具（例如，具有其中一个维度实质上大于垂直维度的开口的模具）。形成聚(乙烯缩丁醛)片的另一种示例性方法包括将来自模具的熔融物浇铸在滚轴上，让树脂硬化，随后移除呈片形式的已硬化树脂。在各个实施方案中，聚合物层可以具有例如0.1至2.5毫米、0.2至2.0毫米、0.25至1.75毫米和0.3至1.5毫米的厚度。
本发明的聚(乙烯缩丁醛)层可以包含低分子量环氧树脂添加剂。本发明可以使用任何适宜的环氧树脂物质，正如所属领域技术已知（参见例如美国专利5,529,848和5,529,849）。
可以将其它添加剂并入聚合物片中以增强其最终产物的性能。这类添加剂包括但不限于如所属领域技术已知的染料、颜料、稳定剂（例如，紫外线稳定剂）、抗氧化剂、防粘连剂、其它IR吸收剂、阻燃剂、以上添加剂的组合等。
常见紫外线稳定剂包括经取代的2H-苯并三唑，如由Ciba SpecialtyCompany以商标名
Figure BDA00002159592700061
贩售的稳定剂，例如Tinuvin
Figure BDA00002159592700062
如式II所显示：
Figure BDA00002159592700063
基底基材
本发明的基底基材（显示为图1中的元件12）可以是能够在其上形成本发明的光伏打装置的任何适宜基材。实例包括但不限于玻璃和产生“刚性”薄膜模块的刚性塑料上光材料和薄塑料膜，如聚(对苯二甲酸乙二酯)、聚酰亚胺、含氟聚合物和类似物质，这些物质产生“可挠性”薄膜模块。基底基材基本上适宜允许350至1,200纳米范围内的大部分入射辐射透过，但所属领域技术人员将认识到可以进行改变，包括使光透过保护基材进入光伏打装置的改变。
薄膜光伏打装置
本发明的薄膜光伏打装置（显示为图1中的元件14）是直接形成于基底基材上。常见装置制造涉及沉积第一导电层，蚀刻所述第一导电层，沉积和蚀刻半导电层，沉积第二导电层，蚀刻所述第二导电层，和应用汇流排导体和保护层，这些视应用而定。电绝缘层可以视情况在第一导电层与基底基材之间的基底基材上形成。这个任选层可以是例如硅层。
虽然本发明的1H-苯并三唑剂可以添加至用于不含任何银的光伏打装置上的聚合物层，但是，在优选实施方案中，1H-苯并三唑是用于用于具有含银光伏打装置的光伏打模块中的聚(乙烯缩丁醛)层中。银组件的实例包括但不限于导电层或元件（如线栅）或反射层（参见例如US2006/0213548）。
在其它实施方案中，本发明的1H-苯并三唑剂可以添加至用于包含会发生降解的其它金属的光伏打装置上的聚合物层中，这些金属包括例如铋、铜、镉、铅、锡、锌、金、铟、钯、铂、铝、锑、铬、铁、镍、铑、钽、钛或钒。
所属领域技术人员将认识到，以上装置产生的描述只是一种已知方法且只是本发明的一个实施方案。许多其它类型的薄膜光伏打装置是在本发明的范围内。形成方法和装置的实例包括在美国专利2003/0180983、7,074,641、6,455,347、6,500,690、2006/0005874、2007/0235073、7,271,333和2002/0034645中描述的方法和装置。
薄膜光伏打装置的各个组件可以通过任何适宜方法形成。在各个实施方案中，可以使用化学气相沉积（CVD）、物理气相沉积（PVD）和/或溅射。
上述两个导电层用作电极以承载由插置其中的半导体材料所产生的电流。电极中的其一一般是透明的以允许太阳辐射到达半导体材料。当然，两个导体都可以是透明的，或导体中的其一可以反光，从而将已穿过半导体材料的光反射回到半导体材料中。导电层可以包含任何适宜的导电氧化物材料，如氧化锡或氧化锌，或，如果不严格要求透明，如对于“背”电极而言，则可以使用金属或金属合金层，如包含铝或银的层。在其它实施方案中，金属氧化物层可以与金属层组合以形成电极，且金属氧化物层可以掺杂硼或铝并利用低压化学气相沉积法沉积。导电层可以是例如0.1至10微米厚。
薄膜光伏打装置的光伏打区域可以包含例如呈惯用PIN或PN结构的氢化非晶体硅。硅常可以达至多约500纳米厚，常包含具有3至25纳米的厚度的p-层、20至450纳米的i-层和20至40纳米的n-层。沉积可以通过在硅烷或硅烷与氢气的混合物中的辉光放电实现，例如，正如美国专利4,064,521中所描述。
或者，半导体材料可以是微非晶体硅、碲化镉（CdTe或CdS/CdTe）、二硒化铜铟（CuInSe2或“CIS”或CdS/CuInSe2）、硒化铜铟镓（CuInGaSe2或“CIGS”）或其它光伏打活性材料。本发明的光伏打装置可以具有额外的半导体层，或以上半导体类型的组合，且可以是串联、三接面或异质接面结构。
蚀刻这些层以形成装置的各个组件可以利用任何惯用半导体制造技术实施，包括但不限于利用抗蚀剂掩模丝印、利用正或负光致抗蚀剂蚀刻、机械刻图、放电刻图、化学蚀刻或激光蚀刻。蚀刻各个层一般将在装置中形成单独光电池。那些装置可以利用在制造过程的任何适宜阶段插入或形成的汇流条电连接至其它装置。
保护层可以视情况在光电池上形成，然后与聚(乙烯缩丁醛)层和保护基材组装。保护层可以是例如溅射铝。
由任选绝缘层、导电层、半导体层和任选保护层形成的电互连光电池形成本发明的光伏打装置。
保护基材
本发明的保护基材（显示为图1中的元件18）可以是能够用于粘合至聚合物层并充分保护底下装置的任何适宜基材。实例包括但不限于玻璃、刚性塑料和薄塑料膜，如聚(对苯二甲酸乙二酯)、聚酰亚胺类、含氟聚合物和类似物质。保护基材一般优选允许大部分在350至1,200纳米范围内的入射辐射透过，但所属领域技术人员将认识到可能存在变化，包括让所有进入光伏打装置的光通过基底基材进入的变化。在这些实施方案中，保护基材不要求透明，或大体上透明，且可以是例如防止光经由保护基材离开光伏打模块的反射膜。
组装
本发明的薄膜光伏打模块的最后组装涉及布置聚(乙烯缩丁醛)层，使其通过已在基底基材上形成的汇流条（若可适用）接触薄膜光伏打装置，布置保护基材接触所述聚(乙烯缩丁醛)层，和层压组装件以形成模所述块。
虽然本申请书的主体已通过例举的优选实施方案概述，但是本发明在其范围内包括所有包含银组件和聚(乙烯缩丁醛)的光伏打装置，包括标准（非薄膜）光伏打装置，以及包含与可降解金属组件（例如，太阳能釉料和镜）接触的聚乙烯缩丁醛片的其它多层层压板，这些装置在所属领域技术中已熟知。
本发明包括聚(乙烯缩丁醛)片，其具有本文中所述的组件中的任一种，这些组件并入1H-苯并三唑和任选的如本文中所描述的任何其它添加剂。
本发明包括一种制造光伏打模块的方法，其包括步骤：提供基底基材，在基底基材上形成本发明的光伏打装置，和利用本发明的聚(乙烯缩丁醛)层将光伏打装置层压至保护基材。
本发明包括包含本发明的聚合物层的光伏打模块。
实施例
实施例1
使用小型实验室规模挤压机，将750克乙烯醇含量为约18.7重量%和0.5至4重量%的乙酸乙烯酯残留物的聚(乙烯缩丁醛)树脂与作为增塑剂的285克三乙二醇二(2-乙基己酸酯)、2.63克UV吸收剂Tinuvin
Figure BDA00002159592700091
作为粘性控制盐的0.19克(2-乙基丁酸)镁和如表1中所示的各种添加剂混合，并挤压成0.76毫米厚的片材。
将片材用于层压薄膜太阳能电池（15×15厘米）。将层压板曝露在85°C，85%相对湿度和1,000伏特偏压下1,000小时。在曝露1,000小时后，测定层压板的黄色指数。层压板在曝露前的常见黄色指数为约12（在11与13之间）。
表1
Figure BDA00002159592700101
实施例2
在试验性规模挤压机中按照如下制备片材（1.14mm厚）：对于每100克聚(乙烯缩丁醛)树脂，添加38克三乙二醇二-(2-乙基己酸酯)作为增塑剂，0.35克Tinuvin0.025克(2-乙基丁酸)镁和如表2中所示的各种添加剂。将以银和其它层涂覆的玻璃用于制备聚(乙烯缩丁醛)层压板。经涂层玻璃的尺寸是7×9厘米。在85°C，85%相对湿度（RH）和1,000伏特电偏压下670小时，测试层压板。
表2
Figure BDA00002159592700111
实施例3
在曝露1000小时后，测定来自实施例1的空白对照2和样本4中的银浓度。使样本分层。通过在75:25己烷/乙酸乙酯混合物中浸湿和搅拌从所述层中提取出增塑剂。所回收的聚(乙烯缩丁醛)树脂保留颜色和随后溶于酸中并利用Perkin Elmer Optima 3300DV仪器分析银含量。也分析标准聚(乙烯缩丁醛)片的银含量。
表3
  空白对照2   样本4   标准聚(乙烯缩丁醛)
  Ag(ppm)   316   150   <5
在完整玻璃层压板上测定“黄色指数”。根据ASTM测试方法E 1331，通过排除的镜面组件的半球面反射率测定样本，且其中透明玻璃表面面向光源。利用在整个可见光谱上的反射率值，使用在ASTM E313“Standard Test Method for Yellowness Index of Plastics”方法的表1中出示的“Coefficients of the Equations for Yellowness Index”的“C，1931”栏，计算黄色指数值。
在偏压下的测试是通过首先形成以下结构完成：电极/玻璃层/光伏打膜/电极/聚(乙烯缩丁醛)/玻璃层。然后施加1,000伏特直流电电压，产生约0.1毫安电流。
如实施例中所示，添加Tinuvin
Figure BDA00002159592700112
（一种式II所示的经取代的2H-苯并三唑衍生物）无法阻止变黄，突显出1H-苯并三唑的巨大成功。
凭借本发明，现在可以提供当用于含银光伏打装置时具有优良聚(乙烯缩丁醛)稳定性和抗变黄能力的薄膜光伏打模块。
虽然本发明已参考示例性实施方案进行描述，但是所属领域技术人员将理解，在不脱离本发明的范围下可以实施各种改变且元件可以由其等价物取代。此外，在不脱离其实质范围下可以进行许多修改以使本发明的教示适应特定情况或材料。因此，预期本发明不限于作为实施本发明的最优模式而公开的特定实施方案，本发明将包括所有属于附接权利要求范围内的所有实施方案。
将进一步理解，针对本发明的任一单个组件而指出的范围、数值或特性中的任一内容可以与针对本发明的其它组件中的任一种可兼容组件指出的任何范围、数值或特性交换使用，以形成具有针对各组件的界定值的实施方案，如本文全文中所指出。例如，薄膜模块可以包含聚(乙烯缩丁醛)与光伏打元件的组合以形成许多在本发明范围内的排列，但那将导致列表过于冗繁。
在摘要或任何权利要求中指出的任何附图参考数字只是针对说明的目的且不应视为将本发明限制于在任何图中所示的任一特定实施方案。
图并非按比例绘制，除非另外说明。
在本文中引用的各参考文献（包括期刊论文、专利、申请和书籍）以全文引用的方式并入本文。

Claims (19)

1.一种光伏打模块，包括：
基底基材；
与所述基底基材接触的光伏打装置，其中所述光伏打装置包括金属组件；
与所述光伏打装置接触的聚(乙烯缩丁醛)层，其中所述聚(乙烯缩丁醛)层包含1H-苯并三唑或1H-苯并三唑盐；和
与所述聚(乙烯缩丁醛)层接触的保护基材。
2.根据权利要求1所述的模块，其中所述光伏打装置是薄膜光伏打装置。
3.根据权利要求2所述的模块，其中所述聚(乙烯缩丁醛)层包含0.001至5重量百分比的1H-苯并三唑。
4.根据权利要求2所述的模块，其中所述聚(乙烯缩丁醛)层包含0.1至0.4重量百分比的1H-苯并三唑。
5.根据权利要求2所述的模块，其中所述聚(乙烯缩丁醛)层包含1至5重量百分比的1H-苯并三唑。
6.根据权利要求2所述的模块，其中所述聚(乙烯缩丁醛)层进一步包含酚类抗氧化剂。
7.根据权利要求2所述的模块，其中所述金属是铋、铜、镉、铅、锡、锌、银、金、铟、钯、铂、铝、锑、铬、铁、镍、铑、钽、钛或钒。
8.根据权利要求2所述的模块，其中所述金属是银。
9.根据权利要求2所述的模块，其中所述金属组件用作导电层。
10.一种聚合物中间层，其包含聚(乙烯缩丁醛)片，所述聚(乙烯缩丁醛)片包含0.001至5重量百分比的1H-苯并三唑。
11.根据权利要求10所述的中间层，其中所述聚(乙烯缩丁醛)片包含0.1至0.4重量百分比的1H-苯并三唑。
12.根据权利要求10所述的中间层，其中所述聚(乙烯缩丁醛)片包含1至5重量百分比的1H-苯并三唑。
13.根据权利要求10所述的中间层，其中所述聚(乙烯缩丁醛)片进一步包含酚类抗氧化剂。
14.一种多层层压板，包括：
第一基材；
与所述第一基材接触的金属组件；
与所述金属组件接触的聚(乙烯缩丁醛)层，其中所述聚(乙烯缩丁醛)层包含1H-苯并三唑或1H-苯并三唑盐；和
与所述聚(乙烯缩丁醛)层接触的第二基材。
15.根据权利要求14所述的多层层压板，其中所述聚(乙烯缩丁醛)片包含0.1至0.4重量百分比的1H-苯并三唑。
16.根据权利要求14所述的多层层压板，其中所述聚(乙烯缩丁醛)片包含1至5重量百分比的1H-苯并三唑。
17.根据权利要求14所述的多层层压板，其中所述聚(乙烯缩丁醛)片包含0.001至5重量百分比的1H-苯并三唑。
18.根据权利要求14所述的多层层压板，其中所述聚(乙烯缩丁醛)片进一步包含酚类抗氧化剂。
19.一种制造光伏打模块的方法，包括：
提供基底基材；
在所述基底基材上形成光伏打装置，其中所述光伏打装置包括金属组件；
布置与所述光伏打装置接触的聚(乙烯缩丁醛)层，其中所述聚(乙烯缩丁醛)层包含1H-苯并三唑或1H-苯并三唑盐；
布置与所述聚(乙烯缩丁醛)层接触的保护基材；和
层压所述基底基材、所述光伏打装置、所述聚(乙烯缩丁醛)层和所述保护基材，以形成所述模块。
CN2010800655874A 2010-03-19 2010-03-19 具有稳定化聚合物的光伏打模块 Pending CN102811854A (zh)

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