EP2539483A1 - Procédé et dispositif pour effectuer un chauffage et un refroidissement rapides d'un substrat, suivis immédiatement d'un revêtement sous vide dudit substrat - Google Patents

Procédé et dispositif pour effectuer un chauffage et un refroidissement rapides d'un substrat, suivis immédiatement d'un revêtement sous vide dudit substrat

Info

Publication number
EP2539483A1
EP2539483A1 EP11711047A EP11711047A EP2539483A1 EP 2539483 A1 EP2539483 A1 EP 2539483A1 EP 11711047 A EP11711047 A EP 11711047A EP 11711047 A EP11711047 A EP 11711047A EP 2539483 A1 EP2539483 A1 EP 2539483A1
Authority
EP
European Patent Office
Prior art keywords
substrate
coating
heating
holder
substrate holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11711047A
Other languages
German (de)
English (en)
Inventor
Wolfram Maass
Berthold Ocker
Jürgen LANGER
Helmut John
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Singulus Technologies AG
Original Assignee
Singulus Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Singulus Technologies AG filed Critical Singulus Technologies AG
Priority to EP11711047A priority Critical patent/EP2539483A1/fr
Publication of EP2539483A1 publication Critical patent/EP2539483A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation

Definitions

  • the present invention relates to a method and apparatus for heating and / or cooling a substrate in a vacuum chamber.
  • the heated substrate can then be provided, for example, immediately thereafter with a certain coating and then cooled to a lower temperature.
  • Vacuum coating of thin film substrates by means of sputtering (PVD), chemical vapor deposition (CVD), vapor deposition, and other processes is generally a much used process in the industry to produce specialized functional coatings.
  • Typical examples are the semiconductor industry and now also the solar industry in the production of solar cells. Without this being intended to limit the applicability of the method presented here, this method will be explained here using the example of the production of special magnetic multilayer coatings.
  • Magnetic tunnel junctions are an essential element of MRAMs.
  • MRAMs Magnetic-resistive Random Access Memory
  • TMR Tunnelnel Magneto-Resistance
  • GMR Giant-Magneto-Resistance Effect
  • the substrate should usually have a certain temperature (depending on the layer material) during the coating processes. However, it is currently not possible to quickly heat or cool the substrate to another temperature and then coat it immediately, for example. For example, if the heating and cooling should be done on the holding device, the holding device would have to be cooled in a short time from the specified high temperatures back to room temperature, which appears particularly difficult, since cooling by convection in a vacuum is not possible and such Holding devices necessarily have a relatively large (even thermal) mass.
  • the technical solution in this case is to carry out the cleaning in a special vacuum chamber, which is equipped with a heatable wafer holder (Chuck).
  • This chuck is kept permanently at the high temperature and the wafer is placed on the hot chuck for the purpose of cooking.
  • the wafer is possibly moved into a further process chamber, for example with a vacuum robot, in order to carry out further (eg "cold") process steps.
  • this way of applying coatings to hot substrates is unsuccessful for the addressed magnetic and other multilayer coatings, where individual layers require a different substrate temperature.
  • multiple transport of the substrate from one Viu um-Besmüchftmgshunt into another and back again would be acceptable neither for procedural nor economic reasons (throughput).
  • the invention is based on the basic idea of raising the latter from the (cooled) substrate holder for heating and optionally for coating the (hot) substrate.
  • the substrate holder can therefore remain in this cooled state, so that the substrate is cooled down again by later lowering the heated substrate to the cooled holder. In this way, short heating and cooling times of a substrate can be realized, in each case immediately after the coating in the Vakuumkarnmer.
  • the invention relates to a method for heating cooling and coating a substrate in a vacuum chamber, comprising the following steps: (1) placing the substrate with its underside on a substrate holder, (2) lifting the substrate by a predetermined distance relative to the substrate holder and (3) heating the raised substrate over its top surface with a heating device such as a radiant heater, (4) coating the heated substrate, for example by moving into or through a coating zone, (5) cooling the substrate by lowering it onto the chuck and (6) optionally further coating on the cold substrate.
  • the invention also makes it possible to carry out process sequences in which different temperatures defined on the substrate in the individual steps are set and, if appropriate, one or more coatings are subsequently applied to this substrate Temperature be performed. This also includes the case where a substrate can be held at a higher temperature for a certain time immediately after a coating (tempering).
  • a substrate in the context of this invention may be, for example, a silicon wafer or another carrier which is either already coated or not.
  • the vacuum chamber containing the heating and Besc chtungsvoriques may be part of an overall system, are connected to the other process chambers.
  • a transport device such as a robot (arm) may be provided in the vacuum chamber to reciprocate the substrate, optionally together with the substrate holder.
  • Gas present in the vacuum chamber can be removed from the chamber, for example with the aid of vacuum pumps, so that, for example, a vacuum of less than 10 " , in particular less than 10 " , preferably 10 mbar or less, is achieved in the vacuum chamber.
  • the substrate holder can, for example, fix the substrate by means of electrostatic forces ("Electrostatic Chuck", ESC); such substrate or wafer holders can have a considerable mass of, for example, a few kilograms, depending on the size of the substrates.
  • electrostatic Chuck Electrostatic Chuck
  • Such substrate holders can be designed in various ways. It is essential that a flat surface is provided, for example, the substrate holder may have a recess into which the substrate can be placed, or is planar, so that the underside of the substrate on / on this flat side / surface the holder can be created or stored.
  • fingers or grippers may be provided on / in the holder, which are retractable in the holder and can be pivoted away from this and / or can be moved out or swiveled out of it, so that with its help the substrate is raised relative to the rest of the holder can.
  • the contact surfaces of the fingers or grippers with the substrate have the smallest possible dimensions, e.g.
  • the substrate holder can also be configured such that the fingers or grippers hold the substrate, while the rest of the holder is lowered.
  • the substrate holder has at least two, in particular three or four fingers, and / or at least one gripper.
  • narrow shafts are possible as fingers, eg with a diameter of less than 2 mm.
  • a gripper may be configured to grip the substrate at the bottom and one side, with the contact surfaces to the substrate not exceeding the above-mentioned ranges.
  • a gripper may also be a frame-shaped device or partial frame (eg, consisting only of the frame corners) onto which the substrate is put in and thus has a very small contact surface as mentioned above relative to the substrate holder ,
  • the fingers or the gripper (s) can be made of a material (eg ceramic), which has little or virtually no heat conduction. In this way, as little heat energy as possible is transferred from the currently heated or the finished heated substrate to the (possibly even cooled) substrate holder.
  • the substrate holder is cooled.
  • the substrate holder can be cooled with water and have corresponding cooling channels for this purpose.
  • contact gas channels e.g. in the form of grooves, for passing helium or argon as a contact means between the substrate and the substrate holder.
  • the substrate is lifted by 0.1 to 20 mm, in particular by 1 to 10 mm, preferably 2 to 5 mm.
  • the heating of the substrate via a heating device, in particular via a radiant heater, which is located in the vacuum chamber and with which the substrate is heated to a certain temperature.
  • This temperature may e.g. be adjustable from the outside before the heating process.
  • the substrate brought to a desired temperature is coated in a raised position.
  • a cooled substrate typically in the lowered and coated in close contact with the planar cooled surface of the substrate holder.
  • the heated substrate in the raised state, can be brought to the coating position within the valance chamber in which it can be coated within a few seconds, in particular within less than 2 seconds.
  • a coating device integrated so that the substrate holder with the raised and heated substrate can be easily and quickly brought in the direction of this coating device.
  • the procedure is cooled in the substrate in the lowered state.
  • the coating device can also be located in an adjacent chamber, so that the substrate holder can be brought into the substrate with a robot (arm) in it.
  • the substrate is moved in a direction parallel to the underside of the substrate.
  • the BescWchtungsvoriques may be located in the vacuum chamber next to the heating position, so that by lateral displacement of the substrate with the substrate holder parallel to the substrate surface, this coating device can be achieved.
  • the heating of the raised substrate is controlled by a sensor.
  • This sensor may be, for example, a pyrometer located in the vacuum chamber and measuring the actual temperature of the substrate.
  • the sensor or the pyrometer may alternatively be located outside the vacuum chamber and the temperature of the substrate, for example through a chamber window.
  • Typical pyrometers allow a very small spot of about 1 mm 2 at a distance of 40 cm between the pyrometer and the substrate.
  • the pyrometric measurement through a chamber window is advantageous because the pyrometric sensor does not have to be in contact with the substrate and may not be attacked by reactive gases in the process chamber.
  • the pyrometer can be connected to a controller, which in turn is programmable from a PC, so that the results of the pyrometer can be analyzed in such a way that the heater can be appropriately adjusted or also adjusted to the correct temperature of the pyrometer Adjust substrate and, if necessary, to keep constant.
  • the substrate After a coating, it may be advantageous to cool the substrate to a lower temperature and, in particular, to subsequently coat it. This can be done, for example, by lowering the substrate to the (cooler) substrate fold.
  • the substrate is cooled in a controlled manner.
  • Controlled cooling of the substrate may e.g. be done by the substrate holder is cooled controlled.
  • the sensor or the pyrometer can be coupled to the controller for cooling the substrate fold, so that a substrate lowered onto the substrate holder can be cooled to a specific temperature.
  • a heat accumulator in particular brought to target temperature in advance, can be introduced between the raised substrate and the substrate holder in order to compensate for a possible temperature drop of the substrate.
  • the heat accumulator may, for example, have a large thermal mass and may preferably be black on its side facing the substrate. but be prepared on all other surfaces, or at least on the surface facing the substrate holder so that the heat radiation is minimized in the chamber or in the direction of the substrate holder.
  • this heat accumulator can also be moved back and forth together with the substrate and the substrate holder for the coating in order to avoid substantial cooling of the substrate during the coating process.
  • the substrate is held at a certain temperature for a longer time, in particular a few minutes, preferably at least 10 minutes, before a subsequent coating.
  • heating and / or cooling of the substrate to different, specific temperatures, in particular with respective subsequent coating are carried out sequentially.
  • a controller may be provided which controls the sequence of the method steps, for. B. in several steps in multiple coatings of a substrate controlled.
  • the invention also relates to a system for heating a substrate in a vacuum chamber.
  • the system includes a substrate holder, a lifting device for lifting the substrate, which is arranged with its underside on the substrate holder, and a heating device, in order to heat the raised substrate via its upper side.
  • the lifting device is located on the substrate holder.
  • the lifting device can be integrated, for example, in the substrate holder.
  • the lifting device may include the fingers and / or the gripper (s) as described above.
  • the lifting device is configured such that a significant heat flow between the substrate holder and the substrate in the raised state is prevented.
  • the substrate holder in the surface facing the substrate has at least one contact gas channel for passing through contact gas in order to increase the heat transfer between substrate and substrate holder.
  • the system has a controller for controlled cooling of the substrate holder.
  • the system includes a temperature sensor for controlled heating of the substrate.
  • the substrate holder is movable in a direction parallel to the substrate underside.
  • the method described above is carried out with the system described above.
  • FIG. 1 schematically shows a typical upper and lower electrode layer structure, as used in the example of TMR layer systems for MRAM and TFH;
  • Figure 2 shows schematically an example of sputtering using a target with associated magnetic array and a substrate on the way into the coating zone;
  • FIGS. 3a-c schematically show the sequence of the method for heating a substrate;
  • FIG. 4 schematically shows a temperature profile for a substrate;
  • Figure 5 shows schematically the principle of Figure 2 with substrate holder.
  • FIG. 6 shows schematically the arrangement of a heat accumulator on the substrate holder.
  • FIG. 1 shows an example of a typical TMR layer package.
  • the layers 1, 2 (certain magnetic orientations, "pinned and reference layer”) and the layer 3 ("free layer”) are in this case made of ferromagnetic material and separated by a magnesium oxide layer 0 from each other. The illustrated arrows indicate the direction of magnetization that lies in the layer plane. The thicknesses of the individual layers vary from less than 1.0 nm to a few 10.0 nm.
  • the layer 3 (“free layer”) forms the upper electrode 8 with a layer 4 ("capping layer”).
  • the lower electrode 9 consists of the layers 5 (“seed layer no. 1") and 6 (“seed layer no. 2") and the layer 7 ("pinning layer” of an antiferromagnetic material, such as PtMn, IrMn), as well as from the package layers 1, 10 (coupling layer) and 2 (reference layer).
  • the sputtering cathode has a magnetic array 16 for focusing the electrons responsible for the ionization of the plasma in the vicinity of the surface of the target 14.
  • LDD linear dynamic
  • This procedure stands, for example, in contrast to the methods customary in the semiconductor industry, in which the wafer rests under the coating cathode during the coating without relative movement, ie, statically.
  • the LDD method can now be combined with a device that contains a plurality of coating cathodes so that different layers can be alternately applied to the substrate without loss of time.
  • the desired multi-layer layers of different materials can be produced without longer transport times incurred.
  • a substrate holder This can be, for example, an ESC (cooled with water), in the surface of which channels are integrated in such a way that helium or argon can be used as the contact means between substrate 10 and ESC to better dissipate heat energy.
  • the substrate 10 is brought from a Valmum transport chamber with a robot into the coating chamber and deposited on the chuck (substrate holder). Transport chamber and coating chamber can then be separated from each other via a lock valve.
  • the substrate 10 can be fixed on the chuck, for example, after switching on an electrical voltage with electrostatic forces.
  • a gas cushion can be generated under the substrate 10 in order to achieve good cooling.
  • the selected sputtering cathode 14, 16 is ignited and the substrate 10 is moved through the coating zone one or more times until the desired layer thickness is reached, then the next cathode is selected and ignited.
  • the rapid heating of a substrate 20 can now take place in such a way that, for example, the substrate holder 24 with applied substrate 20 inside the vacuum chamber before the Coating is placed in a heating station in which above the substrate 20 (wafer) or the chuck 24, a heater 22, for example, a radiant heater or an array of radiant heaters is positioned opposite the top 21 b of the substrate 20.
  • a heater 22 for example, a radiant heater or an array of radiant heaters is positioned opposite the top 21 b of the substrate 20.
  • the substrate 20 with its lower side 21a initially lies on the chuck 24, as can be seen in FIG. 3a.
  • one or more layers may already have been applied to the substrate at room temperature or at other temperatures, or the substrate may not yet have a coating.
  • the substrate 20 is lifted by the chuck 24, e.g. so that it no longer touches it via the underside 21 a of the substrate 20.
  • a special lock may e.g. ensure that the substrate 20 remains connected to the chuck 24, e.g. via three or four "fingers" 23 which hold the substrate 20 at the edge and are configured to exhibit low and / or negligible thermal conductivity but a spacing d of a few (eg 2 to 3) millimeters is maintained as in Fig. 3b indicated.
  • the heater 22 is turned on and the substrate 20 is brought to the desired temperature.
  • the measurement of the temperature may e.g. done with a pyrometer 26.
  • the speed of the temperature increase and or the final temperature can be adjusted via a control loop 26, 28, as shown in Fig. 3 c. Since the substrate 20 itself is e.g. has only a low thermal mass, can achieve a rapid increase in temperature.
  • the overall structure of the substrate holder 24 and the installation of suitable cooled shields can further ensure that if possible only the substrate 20 is heated, while other parts of the substrate holder 24 experience the lowest possible increase in temperature.
  • the substrate 20 shields the substrate holder from the radiation of the heating device 22 (at least partially) so that the temperature of the substrate holder 24 barely changes and preferably remains constant.
  • FIG. Fig. 5 shows - based on the principle of Fig. 2 - as a substrate, in this case, a substrate 20, can be coated, which has already been heated by the heater and brought to the target temperature.
  • the chuck 24 can be moved with the raised hot substrate or move automatically controlled (see arrow direction 25), so that the (next) coating can be performed, as indicated in Fig. 5. Since the time between heating the substrate 20 and the coating is very short (eg only a few seconds), little or no cooling of the substrate occurs until the beginning of the coating.
  • a further heating step can be provided between the coatings and the substrate 20 with the substrate holder 24 moved out of the cathode sputtering station 29 and under the heating device and finally back to a coating station be driven.
  • the substrate 20 and the chuck 24 may be sealed, e.g. brought back into the position under the heating and the substrate 20 placed on the chuck 24, possibly also electrostatically pressed on the chuck 24.
  • a rapid cooling of the substrate 20 can take place.
  • the speed of cooling can be set.
  • a heat accumulator 30, which has previously been brought to a desired temperature, can also be introduced between the raised substrate 20 and the chuck 24 in order to compensate for any temperature drop.
  • the heat accumulator 30 has, for example, a large thermal mass and can preferably be prepared on the side facing the substrate 20 in black, but on all other surfaces or at least on the surface facing the chuck so that the heat radiation is nünimal.
  • this heat storage 30 may also be reciprocated together with the substrate and the substrate holder for the coating to minimize cooling of the substrate during coating.
  • the lamps of the radiant heater can have coatings with filter layers, so that the radiated infrared light contains only those wavelengths that are absorbed either primarily by the substrate (typically silicon) or, alternatively, in particular by the already applied layer system.
  • the present invention thus enables rapid heating and cooling of a substrate to be coated to defined temperatures, optionally with immediate subsequent coating, so that very effectively several layers can be applied to the substrate in a very short time at different temperatures.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Magnetic Heads (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

L'invention concerne un procédé pour le chauffage/refroidissement et revêtement d'un substrat dans une chambre à vide, comprenant les étapes suivantes : (1) placer le substrat par sa sous-face sur un support de substrat, (2) soulever le substrat d'une distance prédéfinie par rapport au support de substrat et (3) chauffer le substrat soulevé via sa face supérieure à l'aide d'un dispositif de chauffage, par exemple un dispositif de chauffage par rayonnement, (4) munir le substrat chaud d'un revêtement, par exemple par déplacement dans ou à travers une zone de revêtement, (5) refroidir le substrat par abaissement sur le mandrin et (6) le cas échéant effectuer un autre revêtement sur le substrat froid. Par ailleurs le procédé selon l'invention permet d'effectuer des séquences de processus, où l'on ajuste, lors des différentes étapes, différentes températures définies, sur le substrat, et, le cas échéant, on effectue immédiatement ensuite une ou plusieurs revêtements à cette température de substrat. Ceci inclut par exemple également le cas où un substrat peut être maintenu, immédiatement après revêtement, à une température plus élevée pendant une période donnée (recuit).
EP11711047A 2010-02-24 2011-02-22 Procédé et dispositif pour effectuer un chauffage et un refroidissement rapides d'un substrat, suivis immédiatement d'un revêtement sous vide dudit substrat Withdrawn EP2539483A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP11711047A EP2539483A1 (fr) 2010-02-24 2011-02-22 Procédé et dispositif pour effectuer un chauffage et un refroidissement rapides d'un substrat, suivis immédiatement d'un revêtement sous vide dudit substrat

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10154561A EP2360291A1 (fr) 2010-02-24 2010-02-24 Procédé et dispositif de chauffage et de refroidissement rapide d'un substrat et revêtement immédiate de celui-ci sous vide
PCT/EP2011/052600 WO2011104232A1 (fr) 2010-02-24 2011-02-22 Procédé et dispositif pour effectuer un chauffage et un refroidissement rapides d'un substrat, suivis immédiatement d'un revêtement sous vide dudit substrat
EP11711047A EP2539483A1 (fr) 2010-02-24 2011-02-22 Procédé et dispositif pour effectuer un chauffage et un refroidissement rapides d'un substrat, suivis immédiatement d'un revêtement sous vide dudit substrat

Publications (1)

Publication Number Publication Date
EP2539483A1 true EP2539483A1 (fr) 2013-01-02

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Family Applications (2)

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EP10154561A Withdrawn EP2360291A1 (fr) 2010-02-24 2010-02-24 Procédé et dispositif de chauffage et de refroidissement rapide d'un substrat et revêtement immédiate de celui-ci sous vide
EP11711047A Withdrawn EP2539483A1 (fr) 2010-02-24 2011-02-22 Procédé et dispositif pour effectuer un chauffage et un refroidissement rapides d'un substrat, suivis immédiatement d'un revêtement sous vide dudit substrat

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EP10154561A Withdrawn EP2360291A1 (fr) 2010-02-24 2010-02-24 Procédé et dispositif de chauffage et de refroidissement rapide d'un substrat et revêtement immédiate de celui-ci sous vide

Country Status (6)

Country Link
US (1) US20120328797A1 (fr)
EP (2) EP2360291A1 (fr)
JP (1) JP5707422B2 (fr)
KR (1) KR20130025365A (fr)
RU (1) RU2550464C2 (fr)
WO (1) WO2011104232A1 (fr)

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US10186444B2 (en) * 2015-03-20 2019-01-22 Applied Materials, Inc. Gas flow for condensation reduction with a substrate processing chuck
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US11199562B2 (en) 2019-08-08 2021-12-14 Western Digital Technologies, Inc. Wafer testing system including a wafer-flattening multi-zone vacuum chuck and method for operating the same
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RU2550464C2 (ru) 2015-05-10
RU2012140492A (ru) 2014-03-27
EP2360291A1 (fr) 2011-08-24
US20120328797A1 (en) 2012-12-27
WO2011104232A1 (fr) 2011-09-01
KR20130025365A (ko) 2013-03-11
JP5707422B2 (ja) 2015-04-30

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