Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
  • H01L31/042—PV modules or arrays of single PV cells
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/02—Details
  • H01L31/02016—Circuit arrangements of general character for the devices
  • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
  • H01L31/02021—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for solar cells
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
  • H01L31/042—PV modules or arrays of single PV cells
  • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
  • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
  • H01L31/042—PV modules or arrays of single PV cells
  • H01L31/048—Encapsulation of modules
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/0001—Technical content checked by a classifier
  • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy

Definitions

• the present invention relates to a permanently protected against moisture and high electric field strengths thin-film device on glass, a process for its preparation and its use.
• Thin-film components are exposed to strong weathering, for example, as photovoltaic modules on free-field or roof systems at high electrical voltages of up to 1000 V.
• Thin film photovoltaic modules typically include monolithically integrated thin film photovoltaic cells that corrode in the presence of moisture in the photovoltaic module. It is also known that electrical transients can occur due to the high electrical system voltage between the photovoltaic cells and the ground potential and the resulting high electric field strengths or that ions from the glass drift into the thin layers of the photovoltaic cells. Corrosion or delamination of the photovoltaic cells leads to a permanent performance degradation or complete failure of the photovoltaic modules.
• Photovoltaic systems for feeding electrical energy into the public grid contain a circuit of photovoltaic modules and inverters for converting DC voltage into AC voltage.
• photovoltaic systems with potential boosting are known from DE 10 2007 050 554 A1.
• the potential of the positive pole of the circuit of photovoltaic modules is thereby shifted at the inverter against the ground potential, so that no uncontrolled electrical discharges from the photovoltaic module to ground occur.
• the present invention has for its object to provide an improved thin-film component on glass, which has a high long-term stability against weathering at the same time high electrical field strengths, regardless of the inverter.
• a layer structure and an electrically conductive protective device are applied to a layer structure and the electrically conductive protective device applied at least one dielectric protective layer and the distance between the electrically conductive protective device and the outer edge of the glass is smaller than the distance between the layer structure and the outer edge of the glass pane.
• the thin-film components according to the invention may have external shapes, as are customary in accordance with their functionality. Layer structures may in particular have a photovoltaic, electrochromic, light-emitting or a heating function.
• the thin-film components are preferably disk-shaped. The disk surface can be 100 cm 2 up to 18 m 2 , but preferably 0.5 m 2 to 3 m 2 .
• the thin-film components can be made planar or curved.
• the layer structure usually includes front electrode and back electrode layers. Between the electrode layers, a layer system is applied, which has a photovoltaic, electrochromic, light-emitting or heating function.
• the electrode layers preferably contain silver, gold, copper, nickel, chromium, tungsten, molybdenum, tin oxide, zinc oxide, aluminum, indium tin oxide, silicon dioxide, silicon nitride and / or combinations and mixtures.
• the layer structure is particularly preferably a monolithically integrated series electrical circuit.
• the layer structure is preferably stripped at the edge of the glass pane circumferentially with a width of preferably 5 mm to 20 mm in order to be protected against ingress of moisture or shading by fastening elements on the edge.
• the environment at ground potential can be represented, for example, by grounded attachment means of the thin-film component or a conductive water film with a ground fault on the thin-film component.
• DC voltages preferably occur between the electrodes. But it can also occur electrical alternating voltages or electrical transients.
• the electrically conductive protective device is preferably arranged between the layer structure and the outer edge of the glass edge, so that the maximum electric field strength occurs in the region of the electrically conductive protective device and not in the area of the functional layer structure. A drift of ions from the glass sheet or electrical discharges caused by the electric field is displaced from the layer structure to the electrically conductive protective device.
• a conventional photovoltaic, electrochromic, light-emitting and / or heatable layer structure has at least two electrical poles.
• a pole is preferably at ground potential.
• the second pole may be positive as an anode or negative than the first pole as a cathode.
• the electrically conductive protective device is electrically connected via at least one contact region to a pole of the layer structure. Via the galvanic connection, the electrically conductive protective device is at the electrical potential of one pole of the layer structure.
• the electrically conductive protective device is preferably connected to a pole which has the highest negative electrical potential difference relative to the surrounding ground potential in relation to the photovoltaic module.
• the electrically conductive protection device can also be connected to an additional external voltage source which provides an electrical potential which is equal to or greater than the maximum negative electrical potential of the layer structure.
• the electrically conductive protective device is galvanically connected to the pole with the front electrode layer of the layer structure.
• the electrically conductive protective device is electrically connected at the pole to the back electrode layer of the layer structure.
• the layer structure is completely surrounded by the electrically conductive protective device and thus shields the layer structure circumferentially.
• the electrically conductive protective device may be completely or partially covered by the fastening means and / or an opaque screen printing.
• the line widths of the electrically conductive protective device preferably have a width of 0.5 mm to 5 mm.
• the electrically conductive protective device may have all forms which provide an electrical field strength higher than the layer structure on the electrically conductive protective device.
• the electrically conductive protective device is preferably linear, meandering, comb-like or shaped in the form of connected rectangles and preferably forms a frame shape in the overall unit.
• the electrically conductive protection device is designed as a peripheral frame around the layer structure.
• electrically conductive fastening means are attached to the thin-film component, preferably on the outer edge of the glass pane.
• electrically conductive fastening means at least partially surround the thin-film component at the outer edge of the glass pane.
• electrically conductive fastening means are designed as a peripheral frame along the outer edge of the thin-film component.
• the electrically conductive attachment means may also be preferably designed as an interrupted frame, peripheral frame or as fittings. The attachment of the device to, for example, racks via screwing, clamping and / or gluing the fasteners.
• the electrical potential of the fastening means usually corresponds to the ground potential of a reference system, preferably the potential of the earth mass or the ground potential of a vehicle casing.
• the electrically conductive protection device may have a plurality of frames lying inside one another, which are galvanically connected to one another via a plurality of contact regions.
• the electrically conductive protective device contains silver, gold, copper, nickel, chromium, tungsten, molybdenum, tin oxide, zinc oxide, aluminum, indium tin oxide, silicon dioxide, silicon nitride and / or combinations and mixtures thereof.
• the electrically conductive protective device can be applied as a coating or as wires or networks of wires.
• the electrically conductive protective device and the contact region have the same material as the front electrode layer or back electrode layer of the layer structure.
• the electrically conductive protective device can also contain a different material than the layer structure in order to achieve a higher long-term stability against moisture, high field strengths, impurities from the glass and delamination.
• the electrically conductive protective device can be designed as a sacrificial layer, which chemically changes or delaminates over the lifetime of the thin-film component. The function of the layer structure is not affected by this.
• the dielectric protective layer contains silicate glass, polyvinyl butyral (PVB), polyurethane (PU), polypropylene (PP), polyacrylate, polyethylene (PE), polycarbonate (PC), polymethyl methacrylate, polyvinyl chloride, polyacetate resin, casting resins, acrylates, Ethylene vinyl acetate (EVA), fluorinated ethylene propylene, polyvinyl fluoride, ethylene tetrafluoroethylene, copolymers and / or mixtures thereof.
• PVB polyvinyl butyral
• PU polyurethane
• PP polypropylene
• PP polyacrylate
• PE polyethylene
• PC polycarbonate
• EVA Ethylene vinyl acetate
• the dielectric protective layer preferably contains a composite of adhesion-promoting ethylene-vinyl acetate and polyvinyl fluoride or adhesion-promoting polyvinyl butyral in conjunction with an additional silicate glass pane.
• the layer structure contains thin-film photovoltaic cells with silicon, chalcopyrite and / or cadmium telluride.
• the glass pane with the layer structure and electrically conductive protective device can form the glass pane facing the light incidence or else the glass pane of the thin-film photovoltaic module facing away from the incidence of light.
• the object of the invention is further achieved by a method for producing a thin-film component, wherein a layer structure is applied to a glass pane, an electrically conductive protective device is applied to the glass pane, at least one dielectric protective layer is applied to the layer structure and the electrically conductive protective device and the glass sheet, laminated structure, electrically conductive protective device and dielectric protective layer are bonded to form a thin film device.
• the electrically conductive protective device is formed by laser-cut ablation or mechanical abrasion from partial regions of the layer structure with insulating lines.
• the electrically conductive protective device is applied by printing methods such as screen printing, gravure roll printing, ink jet printing, Aerosoljet printing, flexographic printing, impulse jet printing and / or combinations thereof.
• the electrical conductive protection device can also be made by the combination of laser cut ablation, mechanical abrasion, or the printing process.
• fastening parts are screwed in at least part of the outer edge of the glass pane, clamped or glued.
• the invention further relates to the use of the thin-film components as photovoltaic modules and a series connection of photovoltaic modules with a negative electrical potential to earth mass of at least -100 V and preferably at least -600 V.
• Fig. 1 shows a cross section through an embodiment of an inventive
• Fig. 2 is a plan view of an embodiment of the invention
• FIG. 3 is a plan view of an alternative embodiment of the thin-film component (I) according to the invention.
• FIG. 4 shows a plan view of a further alternative exemplary embodiment of the thin-film component (I) according to the invention
• Fig. 5 shows an embodiment of the method according to the invention in
• FIG. 6 shows an alternative embodiment of the method according to the invention in
• Fig. 1 and Fig. 2 show a thin-film photovoltaic module (I) according to the invention.
• a layer structure (2) with a number of amorphous silicon thin-film photovoltaic cells.
• the individual strip-shaped photovoltaic cells of the layer structure (2) were monolithically integrated connected in series.
• the layered structure (2) contained two amorphous silicon semiconductor junctions in a stacked structure as functional layers.
• the back of the glass layer (1) back electrode layer of the layer structure (2) contained silver.
• the layer structure (2) was mechanically abraded in the edge region at an edge (5) of the glass pane (1) with a width of 15 mm. Within the edge deletion, a 4 mm wide electrically conductive protective device (3) with silver-containing screen printing paste was printed on the glass pane (1). The electrically conductive protective device (3) completely framed the layer structure (2) at a distance of 5 mm. The electrical conductive protection device (3) and the front electrode of the thin-film photovoltaic cell were galvanically connected to the pole (2a) with the highest electrical potential of the thin-film photovoltaic module via a contact area (7) with silver screen printing.
• the electrically conductive protective device (3) had the same electrical potential as the region (2a) of the layer structure (2).
• the layer structure (2) and the electrically conductive protection device (3) were protected in a composite with two dielectric protection devices (4) with Polyvinylbuytral and a rear glass pane from environmental influences, in particular moisture.
• the outer edge (5) of the thin-film photovoltaic module (I) was framed by an aluminum frame as an electrically conductive attachment (8).
• the clamping of the mounting frame (8) was carried out with a depth of 5 mm at the surfaces of the glasses (1.4).
• the open circuit voltage of the thin-film photovoltaic module (I) was -600 V with respect to the earth ground potential.
• the positive pole was galvanically connected to the earth ground potential via an inverter, not shown, without isolating transformer.
• the mounting frame (8) was also at earth ground potential.
• the region (2a) was the negative pole of the thin-film photovoltaic module (I).
• the region (2a) and the electric conductive protection device (3) had the highest negative potential difference to the ground potential.
• the distance between the mounting frame (8) and the electrically conductive protective device (3) was smaller than the distance between the Mounting frame (8) and the layer structure (2).
• FIG. 2 shows a top view of the embodiment according to the invention according to FIG. 1.
• the thin-film photovoltaic module (I) had an area of 1.2 m ⁇ 0.6 m and was completely surrounded by a frame with aluminum as an electrically conductive attachment (FIG. 8) framed.
• the mounting frame (8) had the potential of the earth mass.
• the transparent glass pane (1) not shown, the likewise frame-shaped electrically conductive protective device (3) is shown, which was contacted via the contact region (7) to the pole (2a) galvanically.
• the electrically conductive protection device (3) completely framed the layer structure (2). It can be clearly seen in the plan view that the distance between mounting frame (8) and electrically conductive protective device (3) was less than the distance between the mounting frame (8) and layer structure (2).
• the electrically conductive protective device (3) contained a transparent conductive oxide and was formed from the development of the front electrode layer of the layer structure (2). By a edge deletion of 7 mm and circumferential insulation lines (9) with a width of 100 ⁇ and interruptions in the contact area (7), a frame-shaped region was formed as a transparent electrically conductive protection device (3). In the contact areas (7), the frame-shaped electrically conductive protective device (3) were galvanically connected to the pole (2a). In the embodiment of the invention was in a simple manner an electrically conductive Protective device (3) provided from the continuation of the electrode layer of the layer structure (2). It was surprising and clear that the drift of impurities into the layer structure (2) and the associated permanent degradation of the performance of the thin-film photovoltaic module (I) could be prevented by the inventive electrically conductive and transparent protection device (3).
• the electrically conductive protective device (3) contained a transparent conductive oxide and was formed from the continuation of an electrode layer of the layer structure (2).
• the electrically conductive protective device (3) By a edge deletion of 7 mm and two circumferential 100 ⁇ wide isolation lines (9) with interruptions in the contact area (7), two frame-shaped areas were formed as a transparent electrically conductive protection device (3).
• the frame-shaped transparent electrically conductive layer device (3) was galvanically connected to the pole (2a) via a plurality of contact regions (7).
• electrically conductive protective devices (3) were obtained in a simple manner from the development of the electrode layer of the layer structure (2).
• the protective function for the layer structure (2) has been further increased.
• the inner frame of the electrically conductive protection device (3) and the layer structure (2) remained functional. It was surprising and clear that the drift of impurities into the layer structure (2) and the associated permanent degradation of the thin-film photovoltaic module (I) could be prevented by the design of the electrically conductive and transparent protective device (3) according to the invention.
• Fig. 5 shows in detail an embodiment of the inventive method for producing the thin-film component (I) according to the invention in the flow chart.
• FIG. 6 shows in detail an alternative exemplary embodiment of the method according to the invention for producing the thin-film component (I) according to the invention in the flow chart.

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• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Electromagnetism (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Physics & Mathematics (AREA)
• Life Sciences & Earth Sciences (AREA)
• Sustainable Development (AREA)
• Sustainable Energy (AREA)
• Manufacturing & Machinery (AREA)
• Photovoltaic Devices (AREA)
• Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
• Laminated Bodies (AREA)
• Joining Of Glass To Other Materials (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=43662556

Family Applications (1)

Country Status (7)

Families Citing this family (17)

Citations (2)

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• 2009
  • 2009-09-30 DE DE102009044142A patent/DE102009044142A1/de not_active Withdrawn
• 2010
  • 2010-08-24 EP EP10751883A patent/EP2483935A2/de not_active Withdrawn
  • 2010-08-24 CN CN2010800440016A patent/CN102576713A/zh active Pending
  • 2010-08-24 JP JP2012531303A patent/JP5514912B2/ja not_active Expired - Fee Related
  • 2010-08-24 US US13/395,883 patent/US9099588B2/en not_active Expired - Fee Related
  • 2010-08-24 KR KR1020127008049A patent/KR20120080589A/ko not_active Application Discontinuation
  • 2010-08-24 WO PCT/EP2010/062295 patent/WO2011039000A2/de active Application Filing

Patent Citations (2)

Non-Patent Citations (1)

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