EP2404326A2 - Procédé de fabrication d'un système photovoltaïque en couches minces et système photovoltaïque en couches minces - Google Patents

Procédé de fabrication d'un système photovoltaïque en couches minces et système photovoltaïque en couches minces

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Publication number
EP2404326A2
EP2404326A2 EP10702684A EP10702684A EP2404326A2 EP 2404326 A2 EP2404326 A2 EP 2404326A2 EP 10702684 A EP10702684 A EP 10702684A EP 10702684 A EP10702684 A EP 10702684A EP 2404326 A2 EP2404326 A2 EP 2404326A2
Authority
EP
European Patent Office
Prior art keywords
layer
thin
compound semiconductor
semiconductor layer
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10702684A
Other languages
German (de)
English (en)
Inventor
Dieter Ostermann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zylum Beteiligungs GmbH and Co Patente II KG
Original Assignee
Zylum Beteiligungs GmbH and Co Patente II KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zylum Beteiligungs GmbH and Co Patente II KG filed Critical Zylum Beteiligungs GmbH and Co Patente II KG
Publication of EP2404326A2 publication Critical patent/EP2404326A2/fr
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
    • B32B17/10018—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising only one glass sheet
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/1055—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
    • B32B17/10761—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer containing vinyl acetal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/1055—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
    • B32B17/10788—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer containing ethylene vinylacetate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2327/00—Polyvinylhalogenides
    • B32B2327/12—Polyvinylhalogenides containing fluorine
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to a method for producing a thin-film photovoltaic system, a thin-film photovoltaic Systerti and its use, in particular in a photovoltaic module for the conversion of solar energy into electrical energy.
  • a reaction cell for photoelectrochemical production of hydrogen gas is known.
  • a filled with an aqueous electrolyte housing is provided in which a first of a doped semiconductor material, for example. TiO 2 or SrTiÜ 3 , existing electrode and a second, made of a noble or semi-precious metal or one with respect to the first electrode oppositely doped semiconductor existing electrode are provided.
  • the two electrodes are electrically conductively connected to each other and are irradiated during operation by a light source.
  • the electrodes are arranged such that the reaction cell is divided into two chambers, which are connected to one another in an ion-conducting manner.
  • a gas outlet opening dissipates the hydrogen which forms within the reaction chamber.
  • a semiconductor for detection of UV radiation.
  • a semiconductor is provided as a substrate having a metal chalcogenide compound semiconductor material as an optical absorber material for QV radiation, wherein the Semiconductor forms a Schottky contact with a metal.
  • the semiconductor thus provided with a nanocrystalline metal chalcogenide compound semiconductor layer is conductively connected on one side to an electrical contact layer or to a metallic substrate and on the other side to a metal layer which is at least partially transparent to UV radiation.
  • PV photovoltaic
  • TiO 2 metal chalcogenide compound semiconductor layer
  • metal layer is described in WO 2009/0112397 A2.
  • the core of the invention described there is a superficially nanostructured silver layer in which a plasmon resonance is induced when visible light is incident.
  • practical investigations have shown that this does not contribute effectively to charge carrier separation, since the induced oscillation extends parallel and not perpendicular to the extent of the Schottky barrier between silver layer and TiO 2 layer.
  • a plasmon resonance is achieved only at an exactly set angle of incidence of the incident light.
  • the present invention seeks to provide a comparatively simple and inexpensive method for producing a thin-film photovoltaic system, which is suitable for use in a solar cell.
  • the aim is to be able to generate large-area PV modules in the most effective and cost-effective way possible.
  • __ The above object is achieved by a method for producing a thin-film photovoltaic system according to the preamble of claim 1, characterized in that the Metallchalkogenid-Veritatiwhileiterschient by applying a nanoscale particles with a diameter of about 3 to about 30 ran containing dispersion on a transparent substrate material, wherein the layer thickness of the metal chalcogenide compound semiconductor layer deposited on the substrate material is about 150 nm to about 2000 nm.
  • the invention is thus distinguished by a modification of the layer structure known from the prior art and its suitable integration into known technical solutions for the production of solar modules.
  • the process is relatively easy to carry out and allows the cost-effective production of - even large-scale - PV modules.
  • comparatively inexpensive materials such as palladium (instead of
  • FIGS. 1 shows a schematic plan view of a thin-film PV system based on a monocell having the photosensitive region and a TCO (transparent conductive oxide) connection and a connection of the metallic Schottky contact connection,
  • TCO transparent conductive oxide
  • PV multi-cell the three in series, switched
  • FIG. 4 shows a schematic plan view of a thin-film PV system in series connection
  • FIG. 5 shows a schematic plan view of a thin-sliced PV
  • FIG. 6 shows a schematic plan view of a thin-film PV system in series and parallel connection with bypass diodes
  • FIG. 7 shows a schematic cross section through a thin-film PV double cell
  • PV arrangement in the form of a laminate composite with an adhesive film 9 shows a schematic cross section through a thin-film PV arrangement in an insulating glass composite with a rear glass pane
  • FIG. 10 shows a current-voltage characteristic of a flat doped TiO 2 layer of typically 150 nm on a glass substrate with TCO coating (Pilkington tea glass) and a thin platinum Schottky electrode with a layer thickness of 20 nm.
  • Figure 1 shows a schematic plan view of a simple thin film PV system (1) based on a mono cell with the photosensitive region (3) and the TCO (transparent conductive oxide) terminal (4) and a metallic Schottky contact (5).
  • TCO transparent conductive oxide
  • n-doped TiO 2 with a thin platinum Schottky electrode is selected as the semiconductor material, a voltage of about 0.4 volts can be achieved at the terminals (4, 5) in this way, with a typical efficiency of 3 to 12%
  • Such a monocell is not suitable for large-area formats, since conventional TCO layers (ITO (indium tin oxide), ATO (antimony tin oxide), FTO (fluorine doped tin oxide), ZnO (ceramics), semitransparent metallic thin films of gold, thin films on Based on single-wall carbon nanotubes or silver wire thin films) have comparatively high surface resistivities and achieve values below 10 ⁇ / m 2 only with simultaneously lower transparency for daylight.
  • the TEC glass # 8/3 from Pilkington Specialty Gla ⁇ ⁇ s Products, Toledo, OH 43697-0799, USA has an electrical sheet resistance of ⁇ 9 ⁇ / m 2 with a daylight transmittance of 77%.
  • busbars ie electrically highly conductive lines, which are usually arranged in the edge region, help to reduce the current load.
  • Busbars in the form of silver, silver aluminum or aluminum pastes are applied according to the required design by means of screen printing, stencil printing, dispenser, inkjet, aerosol jet or brush, followed by a heat treatment.
  • Conventional bus bar systems are capable of conducting currents in the ampere-range up to several 10 amps, depending on the thickness and width of the busbar, without substantial heating.
  • FIG. 1 schematically shows a busbar on the left for contacting the TCO layer with the terminal 4, and a busbar on the right for contacting the metallic one
  • the TCO layer can be contacted at two opposite busbars and the metallic layer at the two 90 ° opposite edges, and the TCO layer can be provided with a busbar at all four edges and the metallic layer can be electrically contacted at the back ,
  • FIG. 2 shows a schematic cross section through a simple thin-film PV system 1.
  • a glass substrate 12 can be used with a pyrolytically deposited TCO layer 6, such as the TEC glass # 8/3 or 15 / 3.3 or 15/4 from Pilkington Specialty Glass Products, or it can be electrically conductive and substantially transparent in a vacuum coated glasses or using SoIGeI or Galvank TCO coating systems.
  • the TCO layer 6 is removed in the right edge region by means of laser ablation or grinding or sandblasting or etching (ie the layer is patterned), preferably by means of laser ablation or etching, since such processes do not cause microcracks and since a laser ablation process is currently already 10 to 100 cm a / sec Ablations Republic is feasible and can be very well adjusted to the layer to be ablated or layer sequence. This also applies to the etching-technical structuring.
  • the two busbar contact lines 10, 11 can first be applied to a glass substrate, and then the TCO layer 6 is applied over its entire area and patterned by, for example, laser ablation or etching.
  • the nanocrystalline semiconductive thin film 7 based on a semiconductor of the group TiO 2 , TiO 2 , SrTiO 3 , Cu 2 S, ZnO, VJO 3 , CdS, MoS 2 , CdSeS, SnO 2 , Pb 3 O 4 , CdSe, preferably TiO 2 , applied.
  • the dry layer thickness is according to the invention 150 nm to about 2500 nm, but preferably 500 nm to 1000 nm.
  • dipcoating can be used in Labormafistab.
  • knife coating, roll coating, curtain coating, printing or spraying is preferred as the coating method.
  • This layer can also be produced in a structured manner. This can be done by a previous coverage of the bus bar areas (10, 11) or a subsequent etching-technical structuring or laser ablation.
  • the metallic Schottky contact 8 in the form of a thin layer of some 10 nm based on a metal from the group Ru, Rh, Pd, Ag, 0s, Ir, Pt, Au, Al, Cr, Cu, Ni, Mo, Pb, Ta, W, in particular Pt, Pd, Au or Ni, applied.
  • a metal from the group Ru, Rh, Pd, Ag, 0s, Ir, Pt, Au, Al, Cr, Cu, Ni, Mo, Pb, Ta, W, in particular Pt, Pd, Au or Ni, applied.
  • a metal from the group Ru, Rh, Pd, Ag, 0s, Ir, Pt, Au, Al, Cr, Cu, Ni, Mo, Pb, Ta, W, in particular Pt, Pd, Au or Ni, applied.
  • platinum, gold, palladium and nickel preference was given to experiments with platinum, gold, palladium and nickel.
  • This layer must also be structured.
  • a masking etching technique or also laser ablation can be used.
  • a vacuum method in the sense of a sputtering process or a vapor deposition process is very well suited, since only a few-10 nm layer thickness are required. It can However, a number of other methods such as a chemical or galvanic deposition are used.
  • This metal layer 8 which can also be referred to as a Schotüky electrode, can in principle be connected to the bus bar 11 in a narrow embodiment.
  • the main criterion here is the voltage drop due to an excessively high surface resistance.
  • a reinforcing and highly electrically conductive second layer 9 is arranged on the electrode 8.
  • This additional layer 9 must also be structured. The structuring can take place by means of masking etching or by means of laser ablation.
  • the second layer 9 can be manufactured by means of screen printing, stencil printing, dispensing, inkjet or aerosoljet.
  • the glass substrate 12 is irradiated in Figure 2 from below with the sun 15 of the sun 14.
  • the glass substrate 12 may be provided with an antireflection surface 13 in the form of a prism surface or antireflection coating.
  • the photovoltaically generated voltage of typically about 0.4 volts can be tapped at the busbars 10, 11 with the contacting 4, 5.
  • the glass substrate 2 is usually used in the form of a tempered float glass or the like in the form of a tempered glass (TVG) or an E-pane safety glass (ESG).
  • TVG tempered glass
  • ESG E-pane safety glass
  • a low-iron white glass or solar glass are preferably used.
  • FIG. 3 shows a schematic cross-section through a thin-film PV multi-cell 2 consisting of three series-connected single cells 16, 17, 18.
  • the additional metallic layer 9 can be omitted and the metallic one Layer 8 can take over the series connection (not shown in detail).
  • the number of series connected in series can be adapted to the respective application.
  • busbars 10, 11 can be applied before the attachment of the TCO layer ⁇ .
  • the busbar 11 can also be dispensed with in principle if the metallically highly conductive second layer 9 assumes the busbar function, as shown in FIG.
  • Figure 4 shows a schematic plan view of a
  • Thin film PV-Syster ⁇ in series 19 in series 19.
  • elongated cells 16, 17, 18 are used in series as set forth in FIG.
  • the number of cells can be tuned to the particular application and the required voltage. The narrower the individual cells are carried out, the lower the requirements placed on the electrical conductivity of the TCO layer 6. Also on the electrical conductivity of the layers 8, 9 then less demands are made.
  • Figure 5 shows a schematic plan view of a thin film PV system in series and parallel connection (20).
  • the vertically drawn cells 16, 17, 18 are separated in cell lines 22, 23, 24, 25 and the cell lines 22,
  • the number of columns 16, 17, 18 and the number of lines 22, 23, 24, 25 can be adapted to the respective application.
  • the Ge total voltage that can be tapped at the contacts 4, 5, is determined by the number of columns 16, 17, 18, that is, the number of cells connected in series.
  • the individual cells have to be prepared very uniformly and with little scattering in the essential parameters, since there is the danger of backward thrusts and concomitant destruction of cells.
  • Figure 6 shows a schematic plan view of a
  • bypass diodes 26 in series connected cells 22, 23,
  • the protective diodes or bypass diodes 26 are shown on the glass substrate.
  • these diodes 26 may be contacted directly on the glass in the form of SMD diodes 26, but they may also be applied to the glass in a flash and, in this case, the individual cells connected in series would have to be provided with separate contacts.
  • FIG. 7 shows a schematic cross section through a thin-film PV double cell 27.
  • the thin-film PV arrangement using the Schot ⁇ ky diode effect and the possible pairings semiconductor to metal only low voltages can be achieved.
  • TCO-TiO 2 (n-doped) -Pt about 0.4 volts are generated photovoltaic. Such voltages are too low for many applications and usually cause high currents, which are difficult to process with conventional thin-film structures.
  • the double cell arranged in z-direction is a relatively simple way to increase the cell voltage through the series connection of these two superimposed cells and of course the efficiency, the additional costs Ratio are considered low.
  • a second TCO layer 28 is additionally arranged on the first metal layer 8 of the first cell for the purpose of improving the electrical conductivity and on this layer the second semiconductive layer 29 and the second metal layer 30 are arranged and the previously usual electrically good conductive second metal layer 9 is performed as in the single cell to the contact 5 or a possible busbar 11.
  • the preferred semiconducting nanoscale TiO 2 layers have a good absorption in the UV range, in the choice of the metallic layers the lowest possible UV absorption is to be respected, or to increase the efficiency a glass substrate 12 with the lowest possible UV absorption selected.
  • the thickness of the first and the second and optionally the third semiconducting layer 7, 29 can be adapted to a uniform energy yield, so that the individual.
  • the multi-cell stacked variants can also be used in series and parallel circuit systems.
  • FIG. 8 shows a schematic cross section through a thin-film PV arrangement in the form of a laminate composite with an adhesive composite film 38.
  • an adhesive film 38 in the form of an ethylene vinyl acetate (EVA) film or a polyvinyl butyral (PVB) film is provided for lamination to a back substrate 39.
  • EVA films having a polymeric sandwich laminate 39 and a relatively simple table bleacher are commonly used in the facade glass sector Typically at least 370 microns thick or twice and three times as thick PVB films used in conjunction with a glass substrate 39.
  • the sandwich laminate 39 may in this case a -Laminate "off" eiriex 'thin PVF film with a thin PET film and it can be also a thin aluminum film may be interposed therebetween as a water vapor barrier layer.
  • a typical example of such a film is a ⁇ cosolar film from Isovolta called.
  • the advantage of using such a backside substrate 39 is lower weight compared to a 3 to 6 mm thick glass and in the simpler La ⁇ nier perspectives.
  • the glass substrate 39 is used in the form of an at least partially tempered glass (TVG) or a toughened safety glass (ESG).
  • TVG at least partially tempered glass
  • ESG toughened safety glass
  • FIG. 9 shows a schematic cross section through a thin-film PV arrangement in an insulating glass composite with a rear glass pane 31.
  • the thin-film PV array is arranged on the level 2, ie the inside of the glass pane 12.
  • the thin-film PV array can also be arranged on the level 3, ie the inside of the glass pane 31, but then reflects the Inside the disc 12 light and would be this side with a
  • Antireflection layer too " provided too strong Reduction of the incoming sun rays 15 of the sun 14 to avoid.
  • the insulating glass composite of two glass panes 12, 31 is produced according to the prior art, ie with a running spacer profile 32 with desiccant 33 filled therein and with openings 36 in the spacer to the insulating glass interior 37.
  • the spacer is bonded to the two sheets of glass 12, 31 with a prearear sealant 34 such as butylene or polyisobutylene (PIB) and circumferentially sealed with a secondary sealant 35.
  • a prearear sealant 34 such as butylene or polyisobutylene (PIB)
  • PIB polyisobutylene
  • Silicone or polydimetylsiloxanes (PDMS) or polyurethanes (PU) or polysulfide (PS) can be used as the secondary sealing agent 35.
  • the insulating glass interior 37 may be filled with an inert inert gas such as argon or xenon or krypton with the pressure which is also given outside of the insulating glass system.
  • an inert inert gas such as argon or xenon or krypton
  • connections 4, 5 can also be made in multiple designs by means of the bus bar system 10, 11. It is important to ensure that there is no water vapor diffusion between the busbar lines and the glass. Further, should be less than the primary and secondary sealants 34, 35, all layers 6, I 1 8, 28, 29, 30 are removed, since such layers can be infiltrated and can occur a diffusion 'of water vapor in the insulating interior 37th
  • Syster ⁇ s may replace the glass 12 by a composite security Glass thin film PV system as outlined in Figure 8 can be used.
  • FIG. 10 shows a current-voltage characteristic of a flat doped TiO 2 layer of typically 150 nm on a glass substrate. with TCO coating (Pilkington tea-glass) and a thin platinum Schottky electrode of 20 Layer thickness shown.

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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

L'invention concerne un procédé de fabrication d'un système photovoltaïque en couches minces (2) comprenant une couche semi-conductrice de chalcogénure métallique (7) plane comme absorbeur de lumière solaire et une couche métallique (8) appliquée sur la couche semi-conductrice de chalcogénure métallique (7), ladite couche semi-conductrice de chalcogénure métallique (7) et ladite couche métallique (8) formant un contact Schottky au niveau de leur surface de contact. La solution technique décrite se caractérise en ce que la couche semi-conductrice de chalcogénure métallique (7) est réalisée par application d'une dispersion contenant des particules de taille nanométrique présentant un diamètre compris entre 3 et 30 nm environ sur un matériau de substrat transparent (12), l'épaisseur de la couche semi-conductrice de chalcogénure métallique (7) appliquée sur le matériau de substrat se situant entre 150 nm environ et 2500 nm environ.
EP10702684A 2009-02-06 2010-02-05 Procédé de fabrication d'un système photovoltaïque en couches minces et système photovoltaïque en couches minces Withdrawn EP2404326A2 (fr)

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DE102009007908A DE102009007908A1 (de) 2009-02-06 2009-02-06 Verfahren zur Herstellung eines Dünnschicht-Photovoltaik-Systems und Dünnschicht-Photovoltaik-System
PCT/EP2010/051406 WO2010089364A2 (fr) 2009-02-06 2010-02-05 Procédé de fabrication d'un système photovoltaïque en couches minces et système photovoltaïque en couches minces

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EP10152747A Withdrawn EP2216832A3 (fr) 2009-02-06 2010-02-05 Procédé de fabrication d'un système photovoltaïque à couche mince et système voltaïque à couche mince

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EP (2) EP2404326A2 (fr)
JP (1) JP2010183083A (fr)
KR (1) KR101112980B1 (fr)
CN (1) CN101834231A (fr)
DE (1) DE102009007908A1 (fr)
WO (1) WO2010089364A2 (fr)

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EP2216832A2 (fr) 2010-08-11
WO2010089364A2 (fr) 2010-08-12
CN101834231A (zh) 2010-09-15
US8389318B2 (en) 2013-03-05
DE102009007908A1 (de) 2010-08-12
KR20100090667A (ko) 2010-08-16
WO2010089364A3 (fr) 2011-08-04
KR101112980B1 (ko) 2012-02-24
EP2216832A3 (fr) 2011-07-06
US20100200047A1 (en) 2010-08-12
JP2010183083A (ja) 2010-08-19

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