Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
  • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
  • F04D—NON-POSITIVE-DISPLACEMENT PUMPS
  • F04D19/00—Axial-flow pumps
  • F04D19/02—Multi-stage pumps
  • F04D19/04—Multi-stage pumps specially adapted to the production of a high vacuum, e.g. molecular pumps
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67098—Apparatus for thermal treatment
  • H01L21/67109—Apparatus for thermal treatment mainly by convection
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T137/00—Fluid handling
  • Y10T137/0318—Processes
  • Y10T137/0396—Involving pressure control
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T137/00—Fluid handling
  • Y10T137/8593—Systems
  • Y10T137/85978—With pump
  • Y10T137/86171—With pump bypass

Definitions

• the present invention relates to a method of descent pressure in a lock of loading and unloading a substrate (or "load-lock" in English) from an atmospheric pressure to a low pressure for the loading and unloading of the substrate in a treatment chamber maintained at low pressure.
• the invention also relates to equipment comprising a loading and unloading lock, adapted for the implementation of the method, for example a semiconductor component manufacturing equipment.
• an important step is to treat a substrate under controlled atmosphere at very low pressure in a process chamber of equipment.
• the atmosphere surrounding the substrate is first lowered at low pressure by a loading lock and unloading communicating with the process chamber.
• the loading and unloading chamber comprises a sealed enclosure, the first door of which communicates the interior of the enclosure with an atmospheric pressure zone, such as a clean room or a mini-equipment environment, for loading at least one substrate.
• the chamber of the chamber is connected to a gas pumping system, allowing the pressure in the chamber to be lowered to a suitable low pressure similar to that in the process chamber so that the substrate can be transferred to the chamber. process chamber.
• the airlock further includes a second door for discharging the substrate into the process chamber or into the transfer chamber after being evacuated.
• the loading and unloading chamber is placed in communication with a transfer chamber maintained at low pressure, which then distributes the substrate in the various process chambers.
• the loading and unloading chamber thus makes it possible to reduce the time required to go from atmospheric pressure to low transfer pressure. It also reduces pollution in the process or transfer chamber.
• the descent pressure in the airlock is generally carried out gradually by two successive steps.
• a slow primary pumping is carried out since the pressure atmospheric up to a first characteristic threshold.
• Slow pumping is essential to prevent the solidification of certain gaseous species present in the gaseous atmosphere of the airlock surrounding the substrate, for example to prevent the appearance of water crystals.
• the gaseous atmosphere is brought to the appropriate low transfer pressure by faster primary pumping.
• the partial pressure of water vapor present in the residual gaseous mixture at the transfer pressure is not very well evacuated by the primary pumping system.
• Water vapor can be relatively detrimental to the substrates, and can thus reduce the production yield, in particular by corrosion of the metal layers of the substrate in semiconductor manufacturing processes.
• it necessarily occurs a degassing of the substrate, and it is important that degassing is sufficient before the substrate is introduced into the chamber. processes. In the absence of this, the degassing continues in the process chamber and the gases from this subsequent degassing constitute an additional source of pollution during the treatment.
• a gas pumping system comprising a primary pump connected by a pumping circuit to the loading and unloading lock for pumping the gases to a suitable transfer pressure.
• a turbomolecular pump is interposed in the pumping circuit between the primary pump and the loading and unloading chamber.
• Gas control means are provided to adapt the speed of the primary pump to prevent any condensation or solidification of the gases in the loading chamber and unloading.
• the turbomolecular pump is the only pumping element connected to the loading and unloading chamber.
• the pumping through the turbomolecular pump from the atmospheric pressure can cause problems of reliability of the turbomolecular pump and makes the pumping relatively noisy.
• the drive means of the primary pump for adjusting the speed of the pump are complicated to implement.
• the invention therefore aims to solve the problems of the state of the art by proposing a method of descent pressure in a lock of loading and unloading equipment, simple, inexpensive to implement, compact, to prevent the solidification of certain gaseous species at high pressure and making it possible to reduce the amount of residual water vapor so as to prevent its propagation in the process or low-pressure transfer chamber, without delaying the transfer of the substrate into the chamber of processes.
• the method also aims to improve the degassing of the substrates at the transfer pressure.
• the invention also provides equipment for implementing the method.
• the subject of the invention is a method of descent in pressure in an airlock for loading and unloading equipment from an atmospheric pressure to a sub-atmospheric transfer pressure, said airlock comprising an enclosure in which the at least one atmospheric pressure substrate, and a gas pumping system comprising a primary pump and a turbomolecular pump whose suction is connected to the enclosure via a first isolation valve and whose discharge is connected upstream of said pump primary by a primary pumping circuit, said gas pumping system further comprising a branch circuit of said turbomolecular pump placed in communication on the one hand with said enclosure upstream of said first isolation valve and on the other hand with said primary pumping circuit, said branch circuit comprising a second isolation valve comprising means for limiting the flow of acti and said primary pumping circuit having a third isolation valve disposed between the delivery of the turbomolecular pump and the bypass circuit, said method comprising: a first step in which the first and third isolation valves are closed and opens said second isolation valve for which the flow limitation means are activated, to perform
• turbomolecular pump is constantly maintained at full throttle and at low pressure, which increases its service life and allows immediate pumping inside the enclosure as soon as the isolation valves are opened.
• the method comprises a fourth step following said third step, in which said first isolation valve is closed and said second isolation valve is opened for which the means of flow limitation are disabled, to restore primary pumping by isolating the turbomolecular pumping when a third characteristic threshold is reached, injecting a neutral gas during said fourth step, - said first and / or said second and / or said third characteristic threshold are predetermined durations, said first and / or second and / or said third characteristic threshold are predetermined pressure values, said second primary pumping is restored when said lock receives a substrate unloading request signal.
• the invention also relates to equipment for carrying out the pressure descent method as described above, comprising a loading and unloading chamber comprising an enclosure for the descent into pressure of the environment of at least one substrate from atmospheric pressure to a sub-atmospheric transfer pressure and at least one treatment chamber in communication with said loading and unloading lock for transfer of the substrate into the transfer pressure treatment chamber, said airlock comprising a gas pumping system comprising a primary pump and a turbomolecular pump whose suction is connected to the chamber via a first isolation valve and whose discharge is connected upstream of said primary pump by a primary pumping circuit said gas pumping system further comprising a bypass circuit of said turbomolecular pump in communication with each other; one part with said enclosure upstream of said first isolation valve and secondly with said primary pumping circuit, said bypass circuit comprising a second isolation valve comprising activatable flow limitation means and said pumping circuit primary circuit comprising a third isolation valve disposed between the discharge of the turbomolecular pump and the bypass circuit, said gas pumping system further comprising means for controlling
• the second isolation valve comprises a first main valve having a first conductance and a second restriction valve bypassing said main valve and having a second conductance lower than said first conductance
• the equipment comprises a processing unit for controlling said first valves as a function of at least one output signal of a sensor of a characteristic parameter of the gases of said enclosure
• said third valve is integrated in a peripheral envelope of said turbomolecular pump to cooperate with a delivery port of said turbomolecular pump .
• FIG. 1 is a schematic view of a loading and unloading chamber and a treatment chamber
• Figure 2 is a schematic side view of a semiconductor component manufacturing equipment
• Figure 3 is a schematic view of a pressure descent process in a loading and unloading chamber.
• FIG. 4 is a graph showing a pressure descent curve in a loading and unloading lock as a function of time.
• low primary vacuum pressure is defined a pressure that is lower than a pressure of the order of 0.1 Pascal, obtained by primary pumping.
• secondary vacuum pressure is defined a pressure of less than 0.1 Pascal, obtained by secondary turbomolecular pumping.
• FIG. 1 represents an equipment item 1 comprising a loading and unloading chamber 2 comprising an enclosure 3 for lowering the pressure of the environment of at least one substrate 4 from atmospheric pressure to a subatmospheric transfer pressure.
• the sub-atmospheric transfer pressure is for example a low primary vacuum pressure, of the order of 0.01 Pascal.
• the equipment 1 furthermore comprises at least one treatment chamber 5 in communication with the loading and unloading chamber 2 via a first airlock door 6, for the transfer of the substrate 4 into the treatment chamber 5 at the transfer pressure. , according to arrow 7.
• the lock 2 and the treatment chamber 5 comprise a substrate holder 8 and handling robots (not shown) for including the maintenance and transfer of the substrate 4.
• the enclosure 3, sealed, comprises a second airlock door 9 communicating the interior of the chamber 3 with an atmospheric pressure zone, such as a clean room or a mini-equipment environment (or "Equipment”).
• an atmospheric pressure zone such as a clean room or a mini-equipment environment (or "Equipment”).
• Front End Module (English)), for loading at least one substrate 4 according to the arrow 10.
• the lock 2 also comprises means for restoring the atmospheric pressure (not shown) to replace the inside of the chamber 3 at atmospheric pressure, either while waiting for the loading of a new substrate or after having loaded a substrate that has been treated by the treatment chamber 2.
• the loading and unloading lock 2 thus makes it possible to reduce the time required to pass from the atmospheric pressure to the sub-atmospheric transfer pressure and makes it possible to reduce the pollution in the process or transfer chamber.
• the equipment 1 is for example a semiconductor component manufacturing equipment.
• the treatment chamber 5 is then a process chamber or a transfer chamber.
• the processing chamber 5 is a process chamber in which for example a deposit or etching of layers of the substrate 4 of semiconductors under an atmosphere is carried out. controlled at a secondary vacuum pressure, for example of the order of 10 3 Pascal.
• the equipment may include one or more process chambers.
• the treatment chamber 5 is then a transfer chamber.
• the transfer chamber is maintained at a transfer pressure of the order of that of the process chamber, for example of the order of 10 2 Pascal.
• the atmosphere of the transfer chamber is maintained by a primary pump or a secondary pump under a controlled atmosphere of neutral gas, such as nitrogen.
• the transfer chamber receives the substrate 4 from the loading and unloading chamber 2 at the transfer pressure and distributes it into the appropriate process chamber.
• FIG. 2 illustrates an example of a multiple equipment for manufacturing semiconductor components comprising a mini-equipment environment 11, a loading and unloading lock 2, a transfer chamber 5 and a process chamber 12.
• the airlock 2 comprises a gas pumping system 13 (FIG. 1) in communication with the enclosure 3 for the descent of pressure inside the enclosure.
• the gas pumping system 13 comprises a primary pump 14 and a turbomolecular pump 15 upstream of the primary pump 14 in the direction of circulation of the pumped gases, represented by the arrow 16.
• the primary pump 14 may be a pump dedicated to the airlock 2 or may also be the primary pump of another chamber of the equipment 1, such as the transfer chamber 5.
• the suction 17 of the turbomolecular pump 15 is connected to the chamber 3 via a first isolation valve 18.
• the discharge 19 of the turbomolecular pump 15 is connected upstream of the suction of the primary pump 14 by a circuit of primary pumping 20.
• the gas pumping system 13 further comprises a bypass circuit 21 of the turbomolecular pump 15 placed in communication on the one hand with the enclosure 3, upstream of the first isolation valve 18 and on the other hand with the primary pumping circuit 20.
• the branch circuit 21 comprises a second isolation valve 22 comprising activatable flow limitation means. When they are activated, the flow limiting means make it possible to limit the pumping speed of the primary pump 14 mechanically.
• the second isolation valve 22 comprises a first main valve having a first conductance and a second bypass restriction of the main valve and having a second conductance lower than the first conductance.
• the primary pumping circuit 20 further comprises a third isolation valve 23 disposed between the delivery 19 of the turbomolecular pump 15 and the bypass circuit 21. It can also be provided that the third valve 23 is integrated in a peripheral envelope of the turbomolecular pump 15 so that the shutter of the third valve 23 cooperates directly with the discharge port of the turbomolecular pump.
• a small turbomolecular pump ATH30 sold by Alcatel Lucent is used.
• Such a pump has the advantage of being compact so that it can be easily disposed near the enclosure 3.
• the gas pumping system 13 further comprises means for controlling, in opening and closing, the isolation valves 18, 22, 23, as a function of characteristic thresholds.
• the equipment 1 comprises a processing unit 24.
• the processing unit 24 controls the opening and / or closing of the valves 18, 22, 23, depending on the flow of predetermined times.
• the processing unit 24 controls the valves 18, 22, 23 as a function of at least one output signal 26 of a sensor 25 connected to the enclosure 3 for the measurement of a parameter characteristic of the gas from the enclosure 3 of the airlock 2.
• the output signal 26 of the sensor 25 is connected to the processing unit 24 for controlling the valves 18, 22, 23 as a function of the characteristic threshold values provided by the output signal 26.
• the senor 25 is a pressure sensor for indicating the pressure in the chamber 3. It can also be envisaged that the sensor 25 can provide an indication of the partial pressure of the gases inside the chamber. For example, the sensor 25 makes it possible to give an indication of the partial pressure of water vapor inside the enclosure 3.
• the senor 25 comprises a derived excitation cell and an electromagnetic excitation antenna powered by a power generator, arranged around the cell so as to form a plasma inside thereof.
• the light radiation emitted by the plasma is then captured and transmitted to an optical spectrometer.
• the transmission can be provided by an optical fiber, or a suitable connector.
• the optical spectrometer generates an output signal 26 of the detected optical spectrum, which is transmitted to the processing unit 24.
• the sensor 25 is a mass spectrometer.
• the pressure drop in the loading and unloading chamber 2 of equipment 1 from the atmospheric pressure to a low transfer pressure is progressively achieved by at least three consecutive steps (see the method 100 shown in FIG.
• the first and second isolation valves 18, 22 are closed. It is also possible to close the third isolation valve 23.
• the primary 14 and turbomolecular pumps 15 are in operation.
• a first primary pumping is performed from the atmospheric pressure to a first characteristic threshold.
• the pumping is performed through the bypass circuit 21 of the primary pump 14, the pumping rate is limited.
• the suction 17 of the turbomolecular pump 15 in operation is isolated from the chamber 3 and the discharge 19 of the turbomolecular pump 15 is isolated from the primary pump 14.
• first and third isolation valves 18, 23 and opens the second isolation valve 22 whose flow limitation means are activated, for example by having a second lower conductance, until crossing a first threshold feature.
• the turbomolecular pump 15 is completely isolated from the gases of the enclosure 3 and the bypass circuit 21, the pressure between the atmospheric pressure and a first sub-atmospheric primary pressure could damage the turbomolecular pump 15.
• This first step 101 makes it possible to carry out a slow primary pumping from the atmospheric pressure to the first characteristic threshold, for which the risk of pollution by too rapid primary pumping no longer exists. Slow pumping prevents the solidification of certain gaseous species present in the gaseous atmosphere surrounding the substrate 4.
• a second primary pumping is performed, which is faster than in the first step 101, up to a second characteristic threshold, while maintaining the isolation of the turbomolecular pumping.
• first and third isolation valves 18, 23 are kept closed.
• the second isolation valve 22 is kept open and the flow limiting means are deactivated, for example with an isolation valve 22 presenting a first conductance greater than the second conductance, until a second characteristic threshold is crossed.
• the pumping rate of the primary pump 14 is no longer limited.
• the second characteristic threshold corresponds to the threshold for which the suction pressure 17 of the turbomolecular pump 15 is sufficiently low so as not to affect its operation.
• the turbomolecular pump 15 remains isolated to the suction 17 and discharge 19, which limits the power consumption of the turbomolecular pump 15 and extend its life.
• secondary pumping is performed through the turbomolecular pumping upstream of the primary pumping and the enclosure 3 is isolated from the primary pumping.
• the first and third isolation valves 18, 23 are opened and the second isolation valve 22 is closed.
• This third step 103 makes it possible to reduce the partial pressure of water vapor present in the residual gaseous mixture and to accelerate the degassing of the substrates, which makes it possible to increase the yield of production.
• the turbomolecular pump 15 when the pressure inside the chamber 3 is sufficiently low, the turbomolecular pump 15, whose operation at full speed has been preserved, can immediately lower the pressure inside. of the enclosure 3.
• the method 100 may comprise a fourth step 104 consecutive to the third step
• a primary pumping is restored by isolating the turbomolecular pumping when a third characteristic threshold is reached.
• primary pumping is restored when the lock 2 receives a request signal for discharging the substrate 4, which can be generated by the treatment chamber 5.
• the first isolation valve 18 is closed and the second isolation valve 22 is opened for which the flow limiting means are deactivated, for example with the first higher conductance when a third characteristic threshold has been crossed. during the third step 103. It is also possible to close the third isolation valve 23 just before opening the second isolation valve 22, to ensure that the discharge 19 of the turbomolecular pump 15 is isolated. a low pressure of primary vacuum.
• the fourth step 104 makes it possible to bring the gaseous atmosphere of the substrate 4 to the appropriate transfer pressure.
• the process steps of the treatment chamber 5 do not have to be modified to allow the entry of the substrate 4, because the same transfer pressure is maintained.
• Said first and / or said second and / or said third characteristic threshold may be predetermined durations.
• said first and / or said second and / or said third characteristic threshold are predetermined pressure values.
• Figure 4 is a graph of a pressure drop curve dans in a loading and unloading lock 2 as a function of time.
• the atmosphere of the substrate 4 is at atmospheric pressure Pa.
• the pressure of the environment of the substrate 4 is lowered by slow pumping at a sub-atmospheric pressure P1, through the primary pump
• the pressure P1 for example of the order of fifty Pascal, corresponds to the first characteristic threshold from which it is estimated that there is no longer a risk of pollution by too rapid primary pumping.
• the pressure of the environment of the substrate 4 is lowered by a rapid pumping at a sub-atmospheric pressure P2, lower than the pressure P1, through the primary pump 14 whose pumping rate n ' is more limited. There is thus a slope break in the pressure drop curve at time t1 for which the fast primary pumping is started.
• the pressure P2 for example of the order of 0.1 Pascal, corresponds to the second characteristic threshold from which the turbomolecular pump can operate fully without risk of deterioration.
• the pressure of the environment of the substrate 4 decreases to a sub-atmospheric pressure P3, of the order of 10 4 Pascal, through the secondary pump 15.
• P3 sub-atmospheric pressure
• the pressure of the environment of the substrate 4 rises to a transfer pressure P4, corresponding to a low pressure of primary vacuum of the order of 10 2 Pascal.
• the pressure P4 is obtained by the primary pumping with an injection of neutral gas.
• the third characteristic threshold corresponds for example to the completion of a duration D, of the order of a few seconds, after the pressure of the chamber 3 has reached the sub-atmospheric pressure P3.
• turbomolecular pump 15 is constantly maintained at full operating speed and is only stressed for low primary vacuum pressures, which increases its service life and makes it possible to avoid any loss of time or efficiency. when placed in communication with the enclosure 3. In addition, it is possible to use a standard turbomolecular pump 15.
• the pressure-lowering method is therefore simple, inexpensive to implement, and makes it possible to descend rapidly to a low pressure that is lower than the transfer pressure in order to improve the conditioning of the substrate, while meeting the industrial constraints of reliability enabling ensure the high rates of the pump cycles of the loading and unloading chambers.

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• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Physics & Mathematics (AREA)
• Power Engineering (AREA)
• Mechanical Engineering (AREA)
• General Engineering & Computer Science (AREA)
• Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
• Physical Vapour Deposition (AREA)
• Chemical Vapour Deposition (AREA)
• Drying Of Semiconductors (AREA)
• Non-Positive Displacement Air Blowers (AREA)

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• 2008
  • 2008-12-19 FR FR0807191A patent/FR2940322B1/fr not_active Expired - Fee Related
• 2009
  • 2009-12-18 CN CN2009801546617A patent/CN102282663A/zh active Pending
  • 2009-12-18 US US13/140,189 patent/US20120024394A1/en not_active Abandoned
  • 2009-12-18 EP EP09805742A patent/EP2377151A1/de not_active Withdrawn
  • 2009-12-18 WO PCT/FR2009/052607 patent/WO2010070240A1/fr active Application Filing
  • 2009-12-18 KR KR1020117016652A patent/KR20110099041A/ko not_active Application Discontinuation
  • 2009-12-18 JP JP2011541570A patent/JP2012513111A/ja not_active Withdrawn

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