EP2335292A1 - Moyen d éclairage - Google Patents

Moyen d éclairage

Info

Publication number
EP2335292A1
EP2335292A1 EP09776087A EP09776087A EP2335292A1 EP 2335292 A1 EP2335292 A1 EP 2335292A1 EP 09776087 A EP09776087 A EP 09776087A EP 09776087 A EP09776087 A EP 09776087A EP 2335292 A1 EP2335292 A1 EP 2335292A1
Authority
EP
European Patent Office
Prior art keywords
wavelength
radiation
lamp
semiconductor chip
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09776087A
Other languages
German (de)
English (en)
Inventor
Peter Stauss
Reiner Windisch
Frank Baumann
Matthias Peter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of EP2335292A1 publication Critical patent/EP2335292A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body

Definitions

  • thermal light sources or light sources such as incandescent lamps
  • "cold" light sources such as LEDs, light-emitting diodes or laser diodes are characterized by high efficiency, a long service life and a compact design
  • Thermal light sources emit a broad, almost continuous spectrum of electromagnetic radiation in the visible spectral range, similar to the spectrum of a black body, for example light emitting diodes emitting in the visible spectral range in comparatively narrow spectral ranges.
  • An object to be solved is to specify a light source with a high color rendering quality.
  • this comprises at least one optoelectronic semiconductor component.
  • the semiconductor device may be configured as a light-emitting diode or as a laser diode.
  • the semiconductor component emits electromagnetic radiation which lies at least partially in the spectral range between 340 nm and 780 nm.
  • the optoelectronic semiconductor component emits at least one first wavelength during operation. Under wavelength _
  • a spectral range or a wavelength range is understood that corresponds to an emission band of approximately one semiconductor chip.
  • Such emission bands are narrow band and have spectral widths in the order of 20 nm.
  • “Width” refers to the full width at half the height of the maximum, English Filling Width at Half Maximum, FWHM for short.
  • “Wavelength” refers to the spectral position of the maximum of the emission band or of the wavelength range Emission band or the corresponding wavelength range.
  • the first wavelength is below 500 nm, in particular between 300 nm and 500 nm, preferably between 400 nm and 450 nm, particularly preferably between 410 nm and 440 nm.
  • the first wavelength is in the near ultraviolet or in the blue spectral range.
  • this light emits at a second wavelength, in particular in the spectral range between 200 nm and 500 nm, preferably in the spectral range between 430 nm and 490 nm.
  • the first wavelength has in particular higher frequencies than the second wavelength.
  • the latter emits electromagnetic radiation at at least a first and a second wavelength, the first wavelength and the second wavelength being different from one another.
  • the emission bands with respect to first and second wavelengths may partially overlap.
  • First wavelength and second wavelength respectively relate to the spectral signature of the radiation emitted directly by the semiconductor device. In particular, this radiation is not influenced by a conversion agent or an absorber.
  • this comprises a conversion means.
  • the conversion means is configured to at least radiation the first
  • Wavelength at least partially convert to radiation of another frequency.
  • the wavelength of the converted radiation is greater than the first wavelength.
  • the converted radiation includes frequencies that are lower than the frequencies in the spectral range of the first wavelength.
  • the radiation spectrum emitted during operation of the luminous means is metameric to a blackbody spectrum. If different spectra are metamer to each other, that means that the spectra have the same color locus. For the illuminant this means that the radiation spectrum has a composition or a course, so that the sensory impression of this radiation spectrum perceived by the human eye corresponds to that of a blackbody spectrum. In other words, the light source for the human eye thus forms a radiator in the form of an ideal black body in thermal equilibrium.
  • the luminous means is preferably designed so that the radiation emitted during operation is perceived as white light, in particular as warm white light.
  • Metamer to a blackbody spectrum also means that the mean distance of the color point of the radiation emitted by the illuminant to the blackbody curve in the standard color chart is less than or equal to 0.07, in the context of production and measurement accuracy.
  • the distance is less than or equal to 0.05, in particular less than or equal to 0.025.
  • the distance is defined as the root over the sum of the square of the x-deviation and the y-deviation.
  • the luminous means comprises at least one optoelectronic semiconductor component which emits electromagnetic radiation in operation at at least one first wavelength and at least one second wavelength, wherein the first wavelength and the second wavelength are different from one another and below 500 nm, in particular between 300 nm and 500 nm, lie.
  • the luminous means comprises at least one conversion means which at least partially converts the first wavelength into radiation of a different frequency.
  • the radiation spectrum emitted by the illuminant during operation is metameric to a blackbody spectrum.
  • the first wavelength and the second wavelength can be selected so that at the same time a high color rendering quality and high efficiency of the light source can be realized.
  • the semiconductor component has at least one semiconductor chip emitting in operation at the first wavelength and at least one emitting at the second wavelength Semiconductor chip on.
  • the ratio between the radiation power at the first wavelength and at the second wavelength can be adjusted selectively, for example via a different current flow of the two semiconductor chips. It is possible for the at least two semiconductor chips to be operated and / or driven independently of one another.
  • the semiconductor component comprises at least one
  • Semiconductor chip which emits in operation both radiation of the first wavelength and radiation of the second wavelength.
  • a single semiconductor chip may be sufficient to produce the first wavelength and both the second wavelength.
  • Such a semiconductor chip is specified, for example, in the document US 2005/0266588 A1, the disclosure content of which is incorporated by reference with regard to the semiconductor chip described there and the production method described there for such a semiconductor chip.
  • About such a semiconductor chip is a compact semiconductor device and thus space-saving bulbs feasible.
  • the semiconductor component comprises at least one semiconductor chip which has an active zone with at least a first part and with at least one second part.
  • First and second part are vertical, that is perpendicular to a main extension direction of the active zone, preferably arranged one above the other. In particular, there is no tunnel contact between the first part and the second part.
  • Such a semiconductor chip is specified in document WO 2007/140738 A1, the disclosure content of which is incorporated by reference with respect to the semiconductor chip described therein.
  • a semiconductor device with such a semiconductor chip is compact.
  • Illuminant has a high efficiency by such a semiconductor device.
  • the luminous means comprises a semiconductor component with at least one semiconductor chip with an active zone, which emits radiation of the first wavelength during operation.
  • the active zone is followed by a luminescent structure which absorbs part of the first wavelength and re-emits at the second wavelength.
  • Active zone and luminescence structure are preferably based on the same semiconductor material, on which in particular the entire semiconductor device is based.
  • active zone and luminescent structure are based on the InGaN or GaN material system.
  • a conversion means is arranged downstream of the entire semiconductor component. This means that the radiation of all semiconductor chips passes through, at least in part, the conversion agent. In particular, substantially all the radiation emitted by the semiconductor component passes through the conversion means. “Substantially” may mean that more than 80%, preferably more than 95%, of the radiation emitted by the semiconductor component passes through the conversion medium, Such a luminous means is simple and compact and has a high conversion efficiency.
  • the first and second wavelengths are at least 10 nm spectrally spaced from one another.
  • the spectral distance is at least 15 nm, in particular at least 20 nm.
  • a spectral width of the radiation emitted by the semiconductor component is at least 50 nm.
  • the spectral width is preferably at least 65 nm.
  • the spectral width is in this case defined such that it is a coherent spectral range. The limits of this range of the spectral width are defined by the fact that the radiation intensity at the boundaries amounts to approximately 13.6% of a
  • the limit thus corresponds to the maximum intensity divided by e 2 , where e represents the Euler number, and e is approximately 2.71.
  • Contiguous means that the intensity within the range of the spectral width does not fall below the value of the limits.
  • the term "intensity” is understood to mean, for example, the spectral intensity density or the power density of the radiation, ie the intensity or power becomes, for example, 1 nm
  • the intervals are to be selected smaller than the spectral width by a factor of 20.
  • the large spectral width of the light emitted by the semiconductor component may increase the color rendering quality of the illuminant.
  • a color rendering index R a of the luminous means is at least 80, preferably at least 85, in particular at least 90.
  • the Color Rendering Index, or CRI for short, indicates how great the average color deviation of defined test color fields is
  • the maximum color rendering index is 100 and corresponds to a light source where no color deviations occur.
  • R a means that eight test colors, in particular the first eight test colors, are used to determine the CRI. Further information on the measurement and determination of the color rendering index can be found in DE 10 2004 047 763 A1, the disclosure of which is hereby incorporated by reference.
  • a color rendering index of at least 80 ensures a high color rendering quality of the light source.
  • the color reproduction quality over a other index for example the Color Quality Scale, CQS for short.
  • the values of another index must then be converted into corresponding CRI values.
  • the luminous means whose efficiency is at least 60 Im / W, preferably at least 70 lm / W. This is made possible by the first wavelength, which lies in the spectral range in which the semiconductor device has maximum efficiency.
  • Such a luminous means has a high efficiency with respect to the conversion of electrical energy into radiant energy.
  • the luminous means its color temperature lies between 2500 K and 6500 K, preferably between 2700 K and 4000 K, in particular between 2900 K and 3400 K.
  • the color temperature is the temperature of a black body whose color locus corresponds to the color locus Characterizing radiation, so the radiation of the light source, comes closest. This most similar
  • CCT Correlated Color Temperature
  • the conversion means converts light of the first
  • Wavelength at least 50%, in particular at least 95% and light of the second wavelength at most 90% in a radiation of another wavelength that is, after transmission through the conversion means lies in the spectral range of the first wavelength at most 5% of
  • this value is at least 10%.
  • the first wavelength is converted by the conversion means to a greater extent than the second wavelength.
  • the difference in the conversion of the first wavelength and the second wavelength by the conversion means is at least 5 percentage points, in particular at least 10 percentage points, wherein the second wavelength is converted to a lesser extent.
  • the corresponding proportion of the second wavelength is at most (X-5)%, in particular at most (X-10)%.
  • the second wavelength is essentially not converted by the conversion means, that is, at least 75% of the radiation power at the second wavelength is transmitted by the conversion means.
  • the first wavelength and the second wavelength are thus matched to the absorption of the conversion means that mainly the first wavelength is converted. This allows a high level of spectral position of the second wavelength
  • the first wavelength is around 430 nm and the second wavelength around 470 nm. That is, the spectral range of the first
  • Wavelength comprises 430 nm and the spectral range of the second wavelength comprises 470 nm, in particular each plus / minus 10 nm, or the first wavelength and the second Wavelength have a maximum intensity in the spectral ranges mentioned.
  • the spectral distance between the first wavelength and 430 nm less than a spectral width, short FWHM, in particular less than one third of the spectral width, short FWHM.
  • the second wavelength By such a first and second wavelength selected high efficiency and a high color rendering quality of the light source can be realized.
  • the semiconductor component comprises at least one semiconductor chip which in operation emits light having a third wavelength of at least 600 nm.
  • the radiation of this semiconductor chip lies in particular in the red
  • the third wavelength is the spectral range corresponding to the corresponding emission band of the semiconductor chip.
  • the third wavelength denotes the maximum of this emission band.
  • the FWHM width of the third wavelength is preferably at least 20 nm, in particular at least 30 nm.
  • the color rendering quality in the long-wavelength spectral range can be improved.
  • this comprises a control unit via which the
  • the control unit can be designed in the form of one or more electrical resistors via which the energization of, for example, a first semiconductor chip emitting at the first wavelength and a second semiconductor chip emitting at the second wavelength is determined. If the control unit includes such resistors, then these can be fixed or also be controllable. If the resistances are fixed, this preferably takes place within the scope of the production of the luminous means. If the resistors are variably adjusted or adjustable, for example in the form of a potentiometer, then, for example, its color temperature can also be adjusted during operation of the luminous means.
  • the second wavelength is at a smaller wavelength than a main working region of the conversion means.
  • main working range of the conversion means that spectral range is designated, in which the most intense emission band of the conversion agent is located.
  • the main work area is a continuous spectral range.
  • the boundaries of the main work area have an intensity that is approximately 13.6% of the maximum intensity of the main work area. Within the main work area, the intensity does not drop below the intensity at the boundaries. If the second wavelength is outside the main working range, the spectral range of the light emitted by the light source is effectively increased. This increases the color rendering quality of the light source.
  • the conversion medium contains at least one inorganic, cerium- or yttrium-containing solid.
  • the conversion agent may be a mixture of several different substances.
  • the conversion agent can be applied in several layers with a different material composition, also structured.
  • a conversion agent, which has several different substances, can be a spectrally wider
  • Main work area and a good color rendering quality of the bulb can be achieved.
  • the conversion medium contains two inorganic phosphors, in particular exactly two inorganic phosphors.
  • One of the phosphors, phosphor A emits in the yellow or green spectral range.
  • the other phosphor, phosphor B emits in the red spectral range.
  • a dominant wavelength of emission of phosphor A is between 540 nm and 580 nm inclusive, more preferably between 550 nm and 575 nm inclusive.
  • the wavelength of emission of phosphor B is preferably between 590 nm and 615 nm, more preferably between 595 nm inclusive and 610 nm. In this case, the dominant wavelength is in particular that wavelength at which the phosphor exhibits maximum emission.
  • an absorption maximum of the phosphor A lies between 420 nm and 480 nm inclusive, while the phosphor B preferably has a monosorbing absorption coefficient which increases to shorter wavelengths. It is not necessary for the absorbance of the phosphor B to have a narrow optimum or maximum.
  • the emission of phosphor A and the absorption of phosphor B can be coordinated so that one Reabsorption probability is minimized. In other words, radiation emitted by the phosphor A, for example, is not or only negligibly absorbed by the phosphor B, and vice versa.
  • the absorption maximum of the phosphor A and the two wavelengths emitted by the at least one semiconductor chip can be matched to one another in such a way that a particularly favorable spectrum with regard to the simultaneous optimization of the color rendering and efficiency parameters results.
  • the phosphor A is a cerium-doped derivative of the phosphor yttrium-aluminum-garnet, in short YAG, with the general empirical formula (Y, Gd, Lu) 3 (Al, Ga) 5 O 12 : Ce 3+ , In which
  • Phosphor B may be, for example, an Eu-doped nitride having the general empirical formula (Ca, Sr, Ba) Al Si N 3 : Eu 2+ or alternatively (Ca, Sr, Ba) 2 Si 2 N 5 : Eu 2+ act.
  • the luminous means has a semiconductor component which emits at two different wavelengths, a predetermined color rendering quality can already be achieved with less different phosphors. It may therefore reduce the number of phosphors to be used. On the other hand, this can also increase the efficiency of the luminous means, since a reabsorption of converted radiation can be reduced or avoided. In particular, when using a plurality of different phosphors, the reabsorption by the different phosphors can reduce the efficiency of the light source.
  • the first wavelength is around 430 nm and the second wavelength is around 470 nm, with a tolerance of 10 nm in each case.
  • the conversion means converts the first wavelength into a fraction that is at least 5 percentage points larger than a corresponding one Share of the second wavelength in a radiation of a different wavelength, wherein the second wavelength is at smaller wavelengths than that
  • both the radiation having the first wavelength and the radiation having the second wavelength undergoes the conversion means, the radiation of the first wavelength being at least 50% into radiation of another
  • Wavelength is converted and the radiation of the second wavelength is wavelength-converted to a maximum of 90%.
  • illuminants described here can be used, for example, in illumination devices for projection purposes, in headlights or light emitters.
  • Figure 1 is a schematic sectional views of
  • Figure 2 is a schematic sectional view of a
  • Figures 3 and 4 are schematic representations of spectrum and color location (C, F) emitted by a semiconductor device radiation (A, D) and spectra of the radiation after passing through a conversion means (B, E) of embodiments of illuminants described here (D to F ).
  • FIGS. 1 and 2 Exemplary embodiments of semiconductor components 2 and semiconductor chips 20 as well as of a luminous means 1 are illustrated in FIGS. 1 and 2. Spectral properties are explained in more detail in FIGS. 3 and 4.
  • FIG. 1A shows a schematic sectional view of an exemplary embodiment of a semiconductor component 2 that can be used in a luminous means 1.
  • a base body 4 which can be produced, for example, by means of an injection or pressure casting process, has a recess 10.
  • the semiconductor chip 20a emits a first radiation having a first wavelength L1
  • the semiconductor chip 20b emitting a second radiation having a second wavelength L2.
  • a conversion means 3 On a side facing away from the semiconductor chip 20a, 20b side of the recess 10 is a conversion means 3 in the form of a - -
  • the conversion means 3 is spaced from the semiconductor chips 20a, 20b. Due to the distance between conversion means 3 and semiconductor chips 20a, 20b, mixing of radiation emitted by the semiconductor chips 20a, 20b until leaving the conversion means 3 is possible.
  • the two semiconductor chips 20a, 20b have an active zone 21 in which the radiation is generated during operation.
  • the two semiconductor chips 20a, 20b thus emit radiation in the active regions 21 with different wavelengths.
  • the components of the semiconductor component 2 which are not essential for the description of the exemplary embodiment, such as electrical contacts, are not shown in FIG. 1A and the further figures.
  • FIG. 1B shows a semiconductor chip 20.
  • the semiconductor chip 20 comprises two active regions 21a, 21b.
  • the active region 21 a is designed to emit radiation having the first wavelength L 1 during operation of the semiconductor chip 20.
  • radiation of the second wavelength L2 is generated.
  • On a side of the semiconductor chip 20 facing away from the active zone 21a a layer with the conversion means 3 is applied.
  • the semiconductor chip 20 thus comprises two active zones 21a, 21b, which emit at different wavelengths L1, L2.
  • the semiconductor chip 20 emits at different wavelengths L1, L2. - Io -
  • a semiconductor chip 20 having a single active region 21 is illustrated.
  • a first part 23 is located above a second part 23.
  • the first part 22 comprises, for example, differently designed quantum wells than the part 23.
  • the first part 22 and the second part 23 can be used for Example, each have three layers of quantum wells, wherein the layers extend substantially perpendicular to the vertical direction V.
  • First part 22 and second part 23 are connected by no tunnel junction.
  • radiation of the first wavelength L 1 is generated in the first part 22 of the active zone, and radiation of the second wavelength L 2 is generated in the second part 23.
  • first part 22 and second part 23 have different dopings. In other words, the
  • Semiconductor chip 20 only a single active zone, are generated in the first wavelength Ll and second wavelength L2 in operation.
  • Conversion 3 applied as a layer.
  • the layer with the conversion agent 3 is structured. That is, in a direction parallel to a main extension direction of the active region 21, the thickness of the conversion means 3 is lower in edge regions 14 than in a central region 13 above the first part 22 of the active region 21.
  • a semiconductor component 2 is drawn with a semiconductor chip 20 which has an active zone 21 and a luminescence structure 25.
  • radiation of the first wavelength L 1 is generated in the active zone 21. This is partially converted in the luminescent structure 25 into a radiation of the second wavelength L2.
  • the recess 10 is formed by the base body 4.
  • the semiconductor chip 20 is also located in the recess 10.
  • the semiconductor components 2 or semiconductor chips 20 illustrated in FIG. 1 may have structures that are not illustrated, for example for electrical contacting or for improving the light extraction.
  • the semiconductor device 2 may comprise reflection means, diffusion means and / or absorbents. These can be designed as a coating and / or as admixtures.
  • FIG. 1 An exemplary embodiment of a luminous means 1 is shown in FIG.
  • the carrier 7 is formed with a ceramic, for example with aluminum oxide.
  • the carrier 7 and the semiconductor chips 20, 24 form the semiconductor component 2.
  • the semiconductor component 2 is applied to a control unit 5. About the control unit 5, the power supply of the semiconductor device 2 via the
  • Control unit 5 the power supply of the chips 20, 24 and the intensity ratio of the radiation emitted by the semiconductor chips 20, 24 radiation can be adjusted. It is also possible that the radiation is dimmable via the control unit 5.
  • the main body 4 surrounds the control unit 5 and the semiconductor device 2 ring or box-shaped.
  • the control unit 5 has an undercut 11.
  • a plate with the conversion means 3 On the side facing away from the control unit 5 side of the base body 4 is a plate with the conversion means 3.
  • a cover plate 8 is applied.
  • the cover plate 8 may be designed with a glass. The cover plate 8 can improve the mechanical properties of the luminous means 1.
  • the cover plate 8 unlike drawn, as an optical element, such as a lens or microlens, be formed and include at least one admixture about in the form of a filter or scattering means.
  • FIGS. 3 and 4 illustrate the spectral properties of a luminous means 1, which may comprise, for example, at least one semiconductor component 2 or at least one semiconductor chip 20 according to FIG. 1 or is constructed approximately according to FIG.
  • FIGS. 3A to 3C relate to a luminous means 1 which has a semiconductor component 2 with only one
  • Emission wavelength LE has.
  • the emission wavelength LE see FIG. 3A, is approximately 452 nm.
  • the wavelength L in nanometers is plotted against the radiation power P, based on wavelength intervals of a width of 2 nm.
  • FIG. 3B shows the resulting spectrum after conversion by the conversion means 3.
  • a conversion wavelength LK is approximately 600 nm.
  • Radiation power P is at least 13.6% of the power P at the wavelength LK ranges from 500 nm to 730 nm.
  • the main working area H is illustrated in each case via a double arrow line. Due to the conversion of the conversion means 3, the power P at the emission wavelength LE is reduced by a factor of about 20.
  • FIG. 3C shows a detail from the standard color chart.
  • the x-axis denotes the red component, the y-axis the green component of the radiation.
  • the spectral signature shown in FIG. 3B corresponds to a color locus R of the light emitted by the luminous means 1 with the coordinates 0.43 and 0.41.
  • the color locus R is in the standard color chart on the blackbody curve 9. That is, the color locus R is metameric to the radiation of a blackbody radiator.
  • the color temperature which corresponds to the temperature of a black body whose color locus is closest to the color locus R of the luminous means 1 is approximately 3000 K. That is, the radiation emitted by the luminous means 1 has a color temperature of 3000 K.
  • the color rendering index of the luminous means 1 is 80, the efficiency is 69.5 lm / W.
  • FIG. 3D shows the radiation power P as a function of the wavelength L of the luminous means 1, which comprises a semiconductor component 2 which in operation emits light at the first wavelength L 1 and the second wavelength L 2.
  • the first wavelength L1 is 444 nm
  • the second wavelength L2 is 460 nm.
  • the radiation power P at the first wavelength L1 is higher than in the second
  • Wavelength L2 Since the wavelengths L1, L2 are comparatively close to each other, an emission band of the wavelength L2 is merely a shoulder of an emission band to recognize the wavelength Ll.
  • FIG. 3E shows the emission spectrum of the luminous means 1 after the radiation emitted by the semiconductor component 2 has passed through the conversion means 3.
  • the conversion wavelength LK is approximately 600 nm
  • the main working range H ranges from approximately 500 nm to 730 nm.
  • the conversion means 3 is mainly radiation of the first wavelength Ll converted. This changes the power ratio of the radiation at the wavelengths L1, L2 to each other. Therefore, the emission band of the second wavelength L2 can be clearly seen in FIG. 3E.
  • Wavelength L2 is outside of the main working area H and is shifted blue therefrom.
  • FIG. 3F shows the detail from the standard color chart.
  • the color locus R lies on the black body curve 9, approximately at the same coordinates as in the luminous means 1 according to FIGS. 3A to 3C.
  • the light source 1 emits warm white light.
  • the color rendering index is also at 80, the color temperature at 3000 K. However, the efficiency is increased significantly to 74.3 lm / W.
  • the semiconductor device 2 comprises semiconductor chips 20, which are based for example on the material system GaN or InGaN. _ -
  • the highest efficiency of an optoelectronic semiconductor chip based on such a material can be achieved in the spectral range between approximately 400 nm and 440 nm. That is, to achieve a high efficiency, that is
  • Emission wavelength LE or the first wavelength Ll preferably in the spectral range between 420 nm and 440 nm.
  • the human eye has the highest sensitivity in the blue spectral range at about 460 nm.
  • an optimum spectral range is about 430 nm in efficiency, an optimum spectral range in color rendering quality at about 460 nm.
  • the FWHM width of an emission band of a semiconductor chip is on the order of 20 nm to 30 nm, optimizing the efficiency and color rendering quality with a single emission wavelength LE is difficult to achieve.
  • a first wavelength L 1 and a second wavelength L 2 on the one hand, the efficiency of the luminous means 1 and, on the other hand, the color rendering quality can be increased.
  • FIG. 4A shows the radiation power P versus the wavelength L of a semiconductor chip with an emission wavelength LE of 460 nm, the spectrum obtained on the basis of the conversion means 3 with the main working range H of 500 nm to 730 nm and FIG
  • Black body curve 9 The radiation emitted by the light source 1 does not look white to the human eye, but reddish.
  • the color rendering index is 88, the color temperature is about 3000 K.
  • a semiconductor device 2 having a first wavelength Ll of 438 nm and a second wavelength L2 of 480 nm is illustrated in FIG. 4D.
  • the spectral width B is approximately 80 nm.
  • the color rendering index of the light emitted by the light source 1, see Figures 3E and 3F, is 90, the efficiency is 60.5 lm / W.
  • the color locus R lies on the black body curve 9.
  • the main working region H of the conversion means 3 with a conversion wavelength of 600 nm ranges from 500 nm to 730 nm.
  • the second wavelength L2 is blue with respect to the main working region H, ie higher frequency. It is mainly the first wavelength Ll converted by the conversion means 3 in a radiation of the conversion wavelength LK.
  • the second wavelength L2 is much more intense in the converted light than the first wavelength Ll, as compared to directly from

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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
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Abstract

Dans au moins un mode de réalisation de l'invention, le moyen d'éclairage (1) comprend au moins un composant optoélectronique à semi-conducteurs (2) qui émet en fonctionnement un rayonnement électromagnétique à au moins une première longueur d'onde (L1) et au moins une seconde longueur d'onde (L2), la première longueur d'onde (L1) et la seconde longueur d'onde (L2) étant différentes l'une de l'autre et se situant à moins de 500 nm, en particulier entre 200 nm et 500 nm. Le moyen d'éclairage (1) comprend par ailleurs au moins un moyen de conversion (3) qui convertit au moins partiellement la première longueur d'onde (L1) en un rayonnement d'une autre fréquence. Le spectre de rayonnement émis par le moyen d'éclairage (1) en fonctionnement est métamère à un spectre de corps noir. Un moyen d'éclairage de ce type permet de choisir la première longueur d'onde et la seconde longueur d'onde de manière à obtenir à la fois une qualité élevée de reproduction des couleurs et un niveau élevé d'efficacité du moyen d'éclairage.
EP09776087A 2008-10-07 2009-08-11 Moyen d éclairage Withdrawn EP2335292A1 (fr)

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DE102008050643.5A DE102008050643B4 (de) 2008-10-07 2008-10-07 Leuchtmittel
PCT/DE2009/001140 WO2010040327A1 (fr) 2008-10-07 2009-08-11 Moyen d’éclairage

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JP (1) JP5827895B2 (fr)
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DE (1) DE102008050643B4 (fr)
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US8410507B2 (en) 2013-04-02
JP2012505527A (ja) 2012-03-01
WO2010040327A1 (fr) 2010-04-15
TWI398024B (zh) 2013-06-01
DE102008050643B4 (de) 2022-11-03
US20110248295A1 (en) 2011-10-13
KR101612576B1 (ko) 2016-04-14
CN102177594A (zh) 2011-09-07
DE102008050643A1 (de) 2010-04-08
TW201025679A (en) 2010-07-01
CN102177594B (zh) 2014-07-02
JP5827895B2 (ja) 2015-12-02
KR20110087264A (ko) 2011-08-02

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