EP2335292A1 - Lamp - Google Patents

Lamp

Info

Publication number
EP2335292A1
EP2335292A1 EP09776087A EP09776087A EP2335292A1 EP 2335292 A1 EP2335292 A1 EP 2335292A1 EP 09776087 A EP09776087 A EP 09776087A EP 09776087 A EP09776087 A EP 09776087A EP 2335292 A1 EP2335292 A1 EP 2335292A1
Authority
EP
European Patent Office
Prior art keywords
wavelength
lamp
nm
radiation
according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09776087A
Other languages
German (de)
French (fr)
Inventor
Peter Stauss
Reiner Windisch
Frank Baumann
Matthias Peter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osram Opto Semiconductors GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE102008050643A priority Critical patent/DE102008050643A1/en
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to PCT/DE2009/001140 priority patent/WO2010040327A1/en
Publication of EP2335292A1 publication Critical patent/EP2335292A1/en
Application status is Withdrawn legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements

Abstract

In at least one embodiment of the lamp (1), said lamp comprises at least one optoelectronic semiconductor component (2), which during operation with at least one first wavelength (L1) and at least one second wavelength (L2) emits electromagnetic radiation, wherein the first wavelength (L1) and the second wavelength (L2) differ from each other and are below 500 nm, in particular between 200 nm and 500 nm. The lamp (1) furthermore comprises at least one conversion means (3), which converts the first wavelength (L1) at least partially into radiation having a different frequency. The radiation spectrum emitted by the lamp (1) during operation is metameric with respect to a black body spectrum. Using such a lamp, it is possible to select the first wavelength and the second wavelength such that at the same time a high color rendition quality and high efficiency of the lamp can be achieved.

Description

description

Lamp

Disclosed is a light source.

Compared with thermal light sources or bulbs, such as incandescent, "cold" light sources such as light emitting diodes, light emitting diodes or laser diodes are characterized by high efficiency, long service life and a compact design. However, an equally important aspect is the spectrum of light emitted by a bulb light. Thermal sources emit a broad, almost continuous spectrum of electromagnetic radiation in the visible spectral range, similar to the spectrum of a black body. For example, light-emitting diodes emit in the visible spectral regions in a relatively narrow spectral regions.

A problem to be solved is to provide a lamp with a high color rendering quality.

According to at least one embodiment of the lighting means comprising said at least one optoelectronic semiconductor component. The semiconductor device may be configured as light-emitting diode or a laser diode. The semiconductor device emits electromagnetic radiation during operation, which lies at least partly in the spectral range between 340 nm and 780 nm.

According to at least one embodiment of the luminous means emits the optoelectronic semiconductor component during operation at least a first wavelength. Under wavelength _

is understood here a spectral range or a wavelength range that corresponds to an emission band such as a semiconductor chip. Such emission bands are narrow band, and have spectral widths on the order of 20 nm. "Width" refers to the full width at half height of the maximum, English full width at half maximum, short FWHM. Under wavelength is the spectral position of the maximum of the emission band or the wavelength range to understand. "Wavelength" includes hereinafter the spectral range of emission band or the corresponding wavelength range.

According to at least one embodiment of the luminous means, the first wavelength below 500 nm, in particular between 300 nm and 500 nm, preferably between 400 nm and 450 nm, more preferably between 410 nm and 440 nm. In other words, the first wavelength in the near ultraviolet or in the blue spectral range.

According to at least one embodiment of the luminous means emits this light at a second wavelength, in particular in the spectral range between 200 nm and 500 nm, preferably in the spectral range between 430 nm and 490 nm. In particular, the first wavelength comprises higher frequencies than the second wavelength.

According to at least one embodiment of the luminous means emits this at least a first and a second wavelength electromagnetic radiation, said first wavelength and second wavelength are different from each other. The emission bands with respect to the first and second wavelength may overlap partially. First wavelength and second wavelength are each based on the spectral signature of the radiation emitted directly from the semiconductor device radiation. This radiation is influenced in particular by a conversion means or an absorber.

According to at least one embodiment of the lighting device, this is a conversion means. The conversion means is configured to at least radiation of the first

to convert wavelength at least partly into radiation of a different frequency. In particular, the wavelength of the converted radiation is greater than the first wavelength. In other words, includes the converted radiation frequencies that are lower than the frequencies in the spectral range of the first wavelength.

According to at least one embodiment of the luminous means is the spectrum of radiation emitted during operation of the luminous means metamer to a black body spectrum. Are different spectra metamer to each other, this means that the spectra have the same chromaticity. for the lighting means so that means that the radiation spectrum has a composition or a gradient, so that the perceived by the human eye sensation this radiation spectrum corresponds to that of a black body spectrum. In other words, the light source to the human eye thus forms a radiator in the form of an ideal black body in thermal equilibrium. The luminous means is preferably designed such that the radiation emitted during operation as white light, especially as warm white light is perceived. Metameric to a blackbody spectrum also means that the average distance of the color point of the emitted radiation from the lamps to the black body curve in the standard color chart is less than or equal to 0.07, in the context of Process and measurement accuracy. Preferably, the distance is less than or equal to 0.05, in particular less than or equal to 0.025 is. The distance is defined here as the root to the sum of the square of the x-offset and y-offset.

In at least one embodiment of the luminous means, it comprises at least one optoelectronic semiconductor component which emits electromagnetic radiation during operation at least a first wavelength and at least one second wavelength, said first wavelength and second wavelength are different from each other and below 500 nm, in particular between 300 nm and 500 nm. Furthermore, the lighting device comprises at least one conversion means that converts the first wavelength at least partly into radiation of a different frequency. The light emitted by the light source in use radiation spectrum is metameric to a blackbody spectrum.

By such a lighting means, the first wavelength and the second wavelength are so selected that at the same time a high quality color rendering and a high efficiency of the lighting device can be realized.

According to at least one embodiment of the lighting device has at least one emitting in operation at the first wavelength semiconductor chip and at least one emitting at the second wavelength semiconductor chip on the semiconductor device. The ratio of the radiation power at the first wavelength and at the second wavelength can be for example the different energization of the two semiconductor chips set specifically. It is possible that the at least two semiconductor chips independently operated and / or controlled.

According to at least one embodiment of the lighting means comprises at least one semiconductor component

Semiconductor chip, which emits both radiation of the first wavelength and radiation of the second wavelength during operation. In other words, a single semiconductor chip may be sufficient to generate the first wavelength and each of the second wavelength. Such a semiconductor chip is disclosed, for example in the document US 2005/0266588 Al, the disclosure of which is incorporated with respect to the semiconductor chip and described therein, the production process described therein for such a semiconductor chip by reference. Over such a semiconductor chip, a compact semiconductor device and thus a space-saving lamps can be realized.

According to at least one embodiment of the lighting device, the semiconductor device comprises at least one semiconductor chip having an active zone with at least one first part and at least one second part. First and second part are vertical, that is perpendicular to a main direction of extension of the active zone, preferably arranged one above the other. Between the first part and the second part is in particular no tunnel contact. In operation, in the first part of the active zone of the radiation - -

first wavelength and generates radiation of the second wavelength in the second part of the active zone. In the two parts of the active zone are, for example, differently designed quantum wells that emit in the operation light at different wavelengths. Such a semiconductor chip is given in the document WO 2007/140738 Al, the disclosure of which is incorporated with respect to the semiconductor chip described therein by reference. A semiconductor device having such a semiconductor chip is constructed compact. The

Lamp has a high efficiency by such a semiconductor device.

According to at least one embodiment of the lighting device, of this, a semiconductor device having at least one semiconductor chip having an active region which emits radiation during operation of the first wavelength. seen in a main emission direction of the active region is followed by a Lumineszenzstruktur, which absorbs some of the first wavelength and re-emitted at the second wavelength. Active zone and Lumineszenzstruktur preferably based on the same semiconductor material on which particular also based the entire semiconductor device. For example, active zone and Lumineszenzstruktur based on the InGaN or GaN material system. such a

Semiconductor chip is indicated 10 2004 052 245 Al in the publication DE, the disclosure of which is incorporated with respect to the semiconductor chip described therein by reference. By using such a semiconductor chip is to achieve a compact, efficient arrangement for a lamp. According to at least one embodiment of the lighting device is arranged downstream of the entire semiconductor component is a conversion means. That is, the radiation of all the semiconductor chips passes through, at least in part, the conversion means. More specifically, the entire light emitted from the semiconductor device radiation passes through the conversion means is substantially. By "substantially" may mean that more than 80%, preferably through the conversion means more than 95% of the light emitted by the semiconductor component radiation. Such lamps is simple and compact and has a high conversion efficiency.

According to at least one embodiment of the luminous means are first and second wavelength at least 10 nm spaced spectrally from one another. Preferably, the spectral distance is at least 15 nm, especially at least 20 nm. Due to a large spectral distance from the first wavelength and the second wavelength to each other, for example, the absorption of one of the wavelengths by a medium, in particular by the conversion means, to be selectively adjusted.

According to at least one embodiment of the luminous means is a spectral width of the radiation emitted by the semiconductor component radiation of at least 50 nm. Preferably, the spectral width is at least 65 nm. The spectral width is here defined so that this is a contiguous spectral range. The limits of this range, the spectral width are defined by the fact that the radiation intensity at the boundaries to approximately 13.6% of a

Maximum value of the intensity has fallen within this range. Thus, the limit represents the maximum intensity divided by e 2, wherein e is Euler's number, and e is about 2.71. means "contiguous" means that the intensity does not fall within the range of the spectral width of less than the value of the limits. Under intensity is, for example, to understand the spectral intensity density, or the power density of the radiation. The intensity or power is thus, for example, 1 nm or 2 nm intervals measured. the intervals are at least a factor 20 to select smaller than the spectral width. a large spectral width of the light emitted from the semiconductor component light, the color rendition of the lighting device can increase.

According to at least one embodiment of the luminous means is a color rendering index R a of the lighting means at least 80, preferably at least 85, especially at least 90. The color rendering index, English Color Rendering Index, or shortly CRI indicates how large the average color deviation from established test swatches in

Is illuminating in to characterizing light source, so the light bulbs that lit by a defined standard light source. The maximum color rendering index is 100 and corresponds to a light source in which no color deviations. R a represents that eight test colors, in particular the first eight test colors, are used to determine the CRI. Further information on measuring and determining the color rendering index can be found in the publication DE 10 2004 047 763 Al, the disclosure of which is hereby incorporated by reference. A color rendering index of at least 80 ensures a high color rendering of the lamp. Alternatively, the color reproduction quality can CQS shortly also be indicated on a different index, for example via the Color Quality Scale. The values ​​of other indexes are then converted into corresponding CRI values.

According to at least one embodiment of the luminous means is its efficiency at least 60 Im / W, preferably at least 70 lm / W. This is made possible by the first wavelength which is in the spectral range in which the semiconductor component has maximum efficiency. Such lamps has, with respect to the conversion of electrical energy into radiation, a high efficiency.

According to at least one embodiment of the fluorescent material is its color temperature between 2500 K and 6500 K, preferably between 2700 K and 4000 K, in particular between 2900 K and 3400 K. The color temperature is the temperature of a black body whose color locus of the color point of the to characterizing radiation, ie the radiation of the light source, comes closest. these most similar

Color temperature is also called Correlated Color Temperature, CCT shortly.

According to at least one embodiment of the luminous means converts the light of the first conversion means

Wavelength at least 50%, especially at least 95%, and light of the second wavelength to more than 90% in a radiation of a different wavelength. That is, is after transmission by said conversion means in the spectral range of the first wavelength more than 5% of the

Intensity or power of the first wavelength, based upon the intensity or power in this spectral region before passing through the _

Conversion means. For the second wavelength, this value is at least 10%. In other words, the first wavelength is converted by the conversion means to a greater extent than the second wavelength.

According to at least one embodiment of the luminous means, the difference in the conversion of the first wavelength and the second wavelength by the conversion means at least 5 percentage points, in particular at least 10 percentage points, wherein the second wavelength is converted to a lesser extent. Is, in other words, a proportion of X% of the first wavelength converted by the conversion means in a different wavelength, so is the corresponding proportion of the second wavelength maximum (X - 5)%, particularly at most (X - 10)%.

According to at least one embodiment of the luminous means, the second wavelength is not converted by the conversion means is substantially, i.e. at least 75% of the radiation power at the second wavelength to be transmitted by the conversion means. The first wavelength and the second wavelength are so matched to the absorption of the conversion means that mainly the first wavelength is converted. This allows a high over the spectral position of the second wavelength

Color rendering of the light source to ensure.

According to at least one embodiment of the luminous means, the first wavelength at 430 nm and the second wavelength around 470 nm. This means that the spectral range of the first

Includes wavelength 430 nm and the spectral range of the second wavelength includes 470 nm, in particular in each case plus / minus 10 nm, or the first wavelength and the second wavelength have a maximum intensity in said spectral ranges. Preferably, the spectral distance between the first wavelength and 430 nm less than a spectral width FWHM is short, in particular less than one third of the spectral width, short FWHM. The same applies also preferred for the second wavelength. By thus selected first and second wavelengths a high efficiency and a high color rendering of the lighting device can be realized.

According to at least one embodiment of the lighting device, the semiconductor device comprises at least one semiconductor chip which emits light during operation having a third wavelength of at least 600 nm. The radiation of this semiconductor chip is especially in the red

Spectral range, in particular between 600 nm and 780 nm, preferably between 600 nm and 630 nm. For the third wavelength applies the same definition as for the first and the second wavelength. That is, with the third wavelength of the spectral region is designated corresponding to the respective emission band of the semiconductor chip. The third wavelength denotes the maximum of this emission band. The FWHM width of the third wavelength is preferably at least 20 nm, especially at least 30 nm. On the use of a semiconductor chip, which in red

emitted spectral color reproduction quality can be improved in the long-wave spectral range.

According to at least one embodiment of the luminous means comprises a control unit that, on the

Intensity ratio between the first wavelength and the second wavelength is adjustable. The control unit may be configured in the form of one or more electrical resistors, on which the power is determined, for example, a first, emitting at the first wavelength and a second semiconductor chip, emitting at the second wavelength semiconductor chips. Includes the control unit such resistance, they can be fixed or be variable. If the resistance of fixed, this is done preferably in the context of the production of the light source. If the resistance variable set or adjustable, for example in the form of a potentiometer, for example, the color temperature can be adjusted even during operation of the lamp.

According to at least one embodiment of the luminous means is the second wavelength at a shorter wavelength than a main working range of the conversion means. With the main working range of the conversion means of the one spectral region is designated, in which the most intense emission band of the conversion agent is. The main work area is a continuous spectrum. The boundaries of the main working area have an intensity corresponding to approximately 13.6% of the maximum intensity of the main working range. Inside the main work area, the intensity does not fall below the intensity at the borders. Is the second wavelength outside the main working range, the spectral range of the light emitted by the light source light is effectively increased. This increases the color rendering of the lamp.

According to at least one embodiment of the luminous means, the conversion means includes at least one inorganic, cerium or yttrium-containing solid. The conversion means - -

may be a mixture of several different materials. The conversion agent may be in a plurality of layers having a different material composition, also structured to be applied. A conversion means having several different materials, a spectrally broad

Main work area and good color rendering of the light source can be achieved.

According to at least one embodiment of the luminous means, the conversion means includes two inorganic phosphors, in particular exactly two inorganic phosphors. One of the phosphors, phosphor A, emits in the yellow or green spectral range. The other fluorescent, fluorescent B, emitting in the red spectral range. Preferably, a dominant wavelength of the emission of phosphor A is between 540 nm and 580 nm, particularly preferably between 550 nm and 575 nm. The dominant wavelength of the emission of phosphor B is preferably between 590 nm and 615 nm, particularly preferably between 595 nm and 610 nm. the dominant wavelength is here in particular that wavelength at which the phosphor exhibits maximum emission.

According to at least one embodiment of the luminous means is an absorption maximum of the phosphor A is between 420 nm and 480 nm, while the B phosphor preferably has a shorter wavelength side monotonically increasing absorption coefficient. It is not necessary that the degree of absorption of the phosphor B has a narrow eingrenzbares optimum or maximum. The emission of phosphor A and the absorption of phosphor B can thereby be coordinated so that a Reabsorptionswahrscheinlichkeit is minimized. In other words, as emitted from the phosphor A radiation by the luminescent material B is not or only negligibly absorbed, and correspondingly vice versa. Moreover, the absorption maximum of the phosphor A and the two emitted from the at least one semiconductor chip wavelengths can be matched to one another such that a particularly favorable range on the simultaneous optimization of the parameters results in color reproduction and efficiency.

According to at least one embodiment of the luminous means is the phosphor A is a cerium-doped derivative of the phosphor of yttrium-aluminum-garnet, short YAG, with the general empirical formula (Y, Gd, Lu) 3 (Al, Ga) 5 O 12: Ce 3+ , In which

Phosphor B may be for example, an Eu-doped nitride having the general empirical formula (Ca, Sr, Ba) Al Si N 3: Eu 2+, or alternatively, (Ca, Sr, Ba) 2 Si 2 N 5: Eu 2+ act.

Characterized in that the lighting means comprises a semiconductor device which emits at two different wavelengths, a predetermined color reproduction quality can already be achieved with less different phosphors. so it can reduce the number of employed phosphors. In this way, the efficiency of the light source can increase the other hand, as a reabsorption may be reduced or avoided by converted radiation. Especially when using a plurality of different phosphors reabsorption may reduce the efficiency of the lighting means by the different phosphors. According to at least one embodiment of the luminous means, the first wavelength at 430 nm and the second wavelength around 470 nm, with a tolerance of 10 nm. The conversion means converts the first wavelength in a proportion which is greater by at least 5 percentage points more than a corresponding proportion of the second wavelength into radiation of a different wavelength, said second wavelength is at lower wavelengths than the

Main work area of ​​the conversion agent.

According to at least one embodiment of the lighting device passes through both the radiation having the first wavelength and the radiation having the second wavelength, the conversion means, wherein the radiation of the first wavelength to at least 50% in a radiation of a different

Wavelength is converted, and the radiation of the second wavelength is converted in wavelength to a maximum of 90%.

Some application areas where described here lamps can be used, include the

General lighting and backlighting of displays or display devices. Furthermore, the lamps described herein may be used for instance in illumination devices for projection purposes, in headlamps or light emitters.

Hereinafter, a lighting device described here with reference to the drawings is explained in more detail with reference to embodiments. The same reference numerals thereby indicate the same elements in the various figures. There are, however, shown to scale covers, rather, individual elements for better understanding may be exaggerated. - -

Show it :

1 shows schematic sectional views of

Embodiments described herein of semiconductor devices,

Figure 2 is a schematic sectional view of a

Embodiment described herein, a lighting means, and

Figures 3 and 4 are schematic representations of spectrum and chromaticity coordinates (C, F) emitted by a semiconductor component radiation (A, D) and spectra of the radiation after passage through a conversion means (B, E) of exemplary embodiments (of described herein bulbs D to F ).

Embodiments of semiconductor devices 2 and the semiconductor chip 20 and of a bulb 1 illustrated in Figures 1 and 2. FIG. Spectral properties are described in more detail in Figures 3 and 4. FIG.

In Figure IA is a schematic sectional view of an embodiment of a semiconductor device 2, which can be used in a light-emitting means 1 is illustrated. A basic body 4, which can be produced, for example, an injection molding or die casting, has a recess 10th In the recess 10, two semiconductor chips 20a, 20b are attached. The semiconductor chip 20 emits a first radiation having a first wavelength Ll, the semiconductor chip 20b, a second radiation having a second wavelength L2. At one of the semiconductor chips 20a, 20b side facing away from the recess 10, a conversion means 3 is in the form of a - -

Plate or disc mounted. From the base body 4 and the conversion means 3, a cavity 6 is formed.

The conversion medium 3 is spaced apart from the semiconductor chips 20a, 20b. By the distance between the conversion means 3, and semiconductor chips 20a, 20b, a mixing of a light emitted from the semiconductor chips 20a, 20b radiation until leaving the conversion means 3 is possible.

According to FIG IA 20b, the two semiconductor chips 20a, an active region 21 in which the radiation is generated during operation. The two semiconductor chips 20a, 20b thus emit radiation in the active regions 21 with different wavelengths.

The non-essential for the description of the embodiment, components of the semiconductor device 2, such as electrical contacts, are not shown in Figure IA and the further figures.

In Figure IB, a semiconductor chip is shown 20th The semiconductor chip 20 includes two active regions 21a, 21b. The active area 21a is configured to emit radiation 20 at the first wavelength Ll in the operation of semiconductor chips. In the active region 21b radiation of the second wavelength L2 is generated. At one of the active region 21a side facing away from the semiconductor chip 20 is a layer with the conversion means 3 is applied. The semiconductor chip 20 thus comprises two active zones 21a, 21b, which emit at different wavelengths Ll, ​​L2. Thus, the semiconductor chip 20 emits in operation at different wavelengths Ll, ​​L2. - Io -

In Figure IC, a semiconductor chip 20 with a single active zone 21 is illustrated. With respect to the extension of the active zone 21 in a vertical direction V is a first part 23über a second part 23. The first part 22 includes, for example differently shaped quantum wells than the part 23. There, the first part 22 and second part 23 have, for example three layers of quantum wells, the layers extending substantially perpendicular to the vertical direction V. First part 22 and second part 23 are interconnected by no tunnel junction. In the first part 22 of the active zone is in the operating radiation of the first wavelength Ll, 23 produces radiation of the second wavelength L2 in the second part. First part 22 and second part 23, for example, have different doping. In other words, includes the

Semiconductor chip 20, only a single active zone, Ll and L2 second wavelength are generated during operation in the first wavelength.

On a main side 12 of the semiconductor chip 20 is the

Conversion means 3 is applied as a layer. The layer with the conversion means 3 is structured. That is, in a direction parallel to a main extension direction of the active region 21, the thickness of the conversion means 3 in the edge areas 14 is less than in a central region 13 to the first part 22 of the active zone 21st

In Figure ID, a semiconductor device 2 is shown with a semiconductor chip 20 having an active region 21 and a LumineszenzStruktur 25th In the active zone 21 of the first wavelength LI is generated in operation radiation. This is converted into the Lumineszenzstruktur 25 partly into radiation of the second wavelength L2. Radiation, - y ± -

leaving the semiconductor chip 20, arrives at the conversion means 3, which is located in the recess 10th The recess 10 is formed from the base body. 4 The semiconductor chip 20 is also located in the recess 10th

The semiconductor devices shown in FIG 1 2 and the semiconductor chip 20 can not have drawn about structures for electrical contacting or for improving the light outcoupling. Also, the semiconductor device 2 of reflection means, diffusion means and / or absorbent may have. These may be implemented as a coating and / or as admixtures.

An embodiment of a light source 1 is shown in FIG. 2 A semiconductor chip 20, for example as shown in FIG IB, or IC, and another semiconductor chip 24 which emits in operation at a third wavelength in the red spectral radiation are mounted on a support. 7 The carrier 7 is formed with a ceramic, such as alumina. The support 7 and the semiconductor chips 20, 24 constituting the semiconductor device 2. The semiconductor device 2 is applied to a control unit. 5 About the control unit 5, the power supply of the semiconductor device is carried on the second

Control unit 5, the power supply of the chips 20, 24 and the intensity ratio of the light emitted from the semiconductor chips 20, 24 radiation can be adjusted. It is also possible that via the control unit 5, the radiation is dimmable.

The basic body 4 surrounds the control unit 5 and ring-shaped or box-shaped, the semiconductor device. 2 For improvement - -

the mechanical connection between the base body 4 and control unit 5 has the control unit 5, an undercut. 11 At the side facing away from the control unit 5 of the body 4 there is a plate with the conversion means 3. At the semiconductor device 2 opposite side of the conversion means 3, a cover plate 8 is applied. The cover plate 8 may be designed with a glass. By the cover plate 8, the mechanical properties of the lighting device 1 can be improved.

Also, the cover plate 8, unlike drawn, be formed as an optical element such as a lens or microlens, and include at least one admixture example in the form of a filter or diffusing agent.

In Figures 3 and 4, the spectral properties of a light source 1 are illustrated, which may for example comprise at least one semiconductor device 2 and at least one semiconductor chip 20 according to Figure 1 or as shown in FIG 2 is constructed.

3A to 3C relate to an illumination means 1, a semiconductor device 2 with only one

Emission wavelength LE has. The emission wavelength LE, see Figure 3A, is around 452 nm. Plotted here is the wavelength in nanometers L to the radiation power P, based on wavelength intervals a width of 2 nm.

In Figure 3B the resulting spectrum is shown after conversion by the conversion means. 3 A conversion wavelength LK is around 600 nm a main work area H of the conversion means 3, in which the -. 2 -

Radiation power P is at least 13.6% of the power P at the wavelength LK, ranges from 500 nm to 730 nm. In Figures 3B, 3E, 4B, 4E, the main work area H is illustrated in each case via a double arrow line. Due to the conversion of the conversion means 3, the power P at the emission wavelength LE is reduced by about a factor 20th

In Figure 3C a detail of the chromaticity diagram is shown. The x-axis denotes the amount of red, the y axis represents the green component of the radiation. The illustrated in Figure 3B, spectral signature corresponding to a locus R of the light emitted from the lamps 1 light with the coordinates 0.43 and 0.41. The color locus R is the standard color chart on the black body curve 9. That is, the color coordinates R metamerically to the radiation of a black body. The color temperature corresponding to the temperature of a blackbody radiator whose chromaticity of the color point is R of the bulb 1 is closest to about 3000 K. This means that the radiation emitted by the light source 1 has a color temperature of 3000 K. If the color rendering index of the light bulb 1 80, the efficiency is 69.5 lm / W.

In Figure 3D, the radiation power P is shown as a function of the wavelength L of the bulb 1, which comprises a semiconductor device 2 that emits light during operation at the first wavelength LI and the second wavelength L2. The first wavelength Ll is located at 444 nm, the second wavelength L2 at 460 nm. The radiation power P at the first wavelength LI is greater than the second

Wavelength L2. Since the wavelengths Ll, ​​L2 are relatively close together, an emission band of wavelength L2 to recognize only as a shoulder of an emission band of wavelength Ll. A spectral width B of the light emitted from the semiconductor device 2 in operation radiation, symbolized by a double arrow line, is approximately 55 nm.

3E, the emission spectrum of the lighting device 1 is shown by the conversion means 3 after passage of the light emitted from the semiconductor device 2 of radiation. The conversion wavelength LK is around 600 nm, the main work area H ranges from about 500 nm to 730 nm.

By the conversion means 3 mainly radiation of the first wavelength LI is converted. In this way, the power ratio of the radiation at the wavelengths Ll, ​​L2 changes to each other. Therefore, in Figure 3E, the emission band of the second wavelength L2 is clearly visible. The second

Wavelength L2 is outside the main work area H and is moved to this blue.

In Figure 3F the section from the standard color chart is shown. The color point R is located on the black body curve 9 at approximately the same coordinates as in the case of lamps 1 as shown in Figures 3A to 3C. The illuminant 1 emits warm white light. The color rendering index is also at 80, the color temperature is 3000 K. However, the efficiency is significantly to 74.3 lm / W increased.

The increase in efficiency of the lighting device 1 according to Figures 3D to 3F with the same color coordinates R and at least the same color rendering index as shown in Figures 3A to 3C has inter alia the following finding:

The semiconductor device 2 comprises a semiconductor chip 20, which are based for example on the material system, GaN or InGaN. _ -

Due to the material properties of GaN or InGaN is the highest efficiency of an optoelectronic semiconductor chip, which is based on such a material, achieved in the spectral region between about 400 nm and 440 nm. That is, to achieve high efficiency, is the

Emission wavelength LE or the first wavelength Ll preferably in the spectral range between 420 nm and 440 nm. The human eye has the highest sensitivity at about 460 nm in the blue spectral range. To achieve a high color rendering index, it is therefore desirable to operate the semiconductor device 2 and a semiconductor chip 20 at wavelengths around 460 nm. In other words, an optimum spectral range in efficiency by approximately 430 nm, an optimal spectral range in color reproduction quality at about 460 nm.

Since the FWHM width of an emission band of a semiconductor chip in the order of between 20 nm and 30 nm, with respect difficult to achieve efficiency and color rendering with a single emission wavelength LE optimization. By using a first wavelength and a second wavelength Ll L2 so the efficiency of the lighting device 1 and on the other hand, the color reproduction quality can be increased on the one hand.

In Figure 4A, the radiation power P compared to the wavelength L is shown a semiconductor chip with an emission wave length LE of 460 nm, the spectrum generated due to the conversion means 3 with the main work area H of 500 nm to 730 nm and the

Conversion wavelength KL of 600 nm is shown in Figure 4B. The corresponding section of the standard color chart is shown in Figure 4C. The color locus R is not on the _ -

Black body curve 9. The light emitted by the lamps 1 radiation affects the human eye is not white but reddish. The color rendering index is 88, the color temperature is about 3000 K.

A semiconductor device 2 having a first wavelength Ll of 438 nm and a second wavelength L2 of 480 nm is illustrated in Figure 4D. The spectral width B is approximately 80 nm. The color rendering index of the light emitted from the lamps 1 light, see Figures 3E and 3F, is 90, the efficiency is 60.5 lm / W. The color locus R is 9. The main working range H of the conversion means 3 with a conversion wavelength of 600 nm ranging from 500 nm to 730 nm on the black body curve. The second wavelength L2 with respect to the main workspace H blue shifted, so higher more frequent. It is mainly the first wavelength Ll from the conversion means 3 to a radiation of wavelength conversion LK converted. The second wavelength L2 is at the converted light more intense than the first wavelength Ll, compared to directly from

Semiconductor device 2 of the emitted radiation as shown in FIG 4D.

The invention described herein is not limited by the description using the exemplary embodiments. Rather, the invention encompasses any new feature and any combination of features, which in particular includes any combination of features in the patent claims, even if this feature or this combination itself is not explicitly specified in the patent claims or exemplary embodiments.

This patent application claims the priority of German patent application 10 2008 050 643.5, the disclosure content - -

is hereby incorporated by reference.

Claims

- -Patentansprüche
1. Lamp (1) comprising
- at least one optoelectronic semiconductor component (2), the first at least one operating
Wavelength (Ll) and at least a second wavelength (L2) emits electromagnetic radiation, said first (Ll) and second wavelength (L2) are different from each other and are below 500 nm, and
- at least one conversion means (3) that converts the first wavelength (Ll) at least partly into radiation of a different frequency so that the luminous means (1) is metameric to a blackbody spectrum in use emitted radiation spectrum.
comprises 2. Lamp (1) according to claim 1, wherein the semiconductor component (2) at least one at the first wavelength (Ll) emitting semiconductor chip (20a) and at least one at the second wavelength (L2) emitting semiconductor chip (20b).
3. Lamp (1) according to claim 1 or 2, wherein the semiconductor component (2) at least one semiconductor chip (20), the at least two active regions (21a, 21b) includes, and in which (at least a first of said active regions 21a , 21b) is adapted to emit (in the operating radiation of the first wavelength Ll), and in which to emit at least a second of said active regions (21a, 21b) is adapted to (operating radiation of the second wavelength L2).
4. Lamp (1) according to any one of the preceding claims, wherein the semiconductor component (2) comprises at least one semiconductor chip (20) having an active zone (21) having a first portion (22) and a second part (23), wherein the operation of the first part (22) of radiation of the first wavelength (Ll) and the second part (23) emits radiation of the second wavelength (L2).
5. Lamp (1) according to one of the preceding claims, wherein the first (Ll) and second wavelength (L2) spectrally at least 10 nm apart.
6. Lamp (1) according to one of the preceding claims, wherein a spectral width (B) of the semiconductor component (2) the emitted radiation is at least 50 nm.
7. Lamp (1) according to any one of the preceding claims, the color rendering index R a is at least 80th
8. Lamp (1) according to one of the preceding claims, wherein the efficiency is at least 60 lm / W.
9. Lamp (1) according to any one of the preceding claims, the color temperature of between 2500 K and 6500 K.
10. Lamp (1) according to any one of the preceding claims, wherein the conversion means (3), the first wavelength (Ll) in a proportion which is greater by at least 5 percentage points more than a corresponding proportion of the second wavelength (L2), in a radiation converts a different wavelength.
11. Lamp (1) according to one of the preceding claims, wherein the first wavelength (Ll) to 430 nm and the second wavelength (L2) situated around 470 nm, with a tolerance of 10 nm.
12. Lamp (1) according to any one of the preceding claims, wherein the semiconductor component (2) at least one semiconductor chip (2) which emits light during operation having a third wavelength of at least 600 nm.
13. Lamp (1) according to one of the preceding claims, comprising a control unit (5) via which the
Intensity ratio between the first wavelength (Ll) and second wavelength (L2) is adjustable.
4. Lamp (1) according to one of the preceding claims, wherein the second wavelength (L2) is at lower wavelengths than a main work area (H) of the conversion means (3).
EP09776087A 2008-10-07 2009-08-11 Lamp Withdrawn EP2335292A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE102008050643A DE102008050643A1 (en) 2008-10-07 2008-10-07 Lamp
PCT/DE2009/001140 WO2010040327A1 (en) 2008-10-07 2009-08-11 Lamp

Publications (1)

Publication Number Publication Date
EP2335292A1 true EP2335292A1 (en) 2011-06-22

Family

ID=41442228

Family Applications (1)

Application Number Title Priority Date Filing Date
EP09776087A Withdrawn EP2335292A1 (en) 2008-10-07 2009-08-11 Lamp

Country Status (8)

Country Link
US (1) US8410507B2 (en)
EP (1) EP2335292A1 (en)
JP (1) JP5827895B2 (en)
KR (1) KR101612576B1 (en)
CN (1) CN102177594B (en)
DE (1) DE102008050643A1 (en)
TW (1) TWI398024B (en)
WO (1) WO2010040327A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8273588B2 (en) * 2009-07-20 2012-09-25 Osram Opto Semiconductros Gmbh Method for producing a luminous device and luminous device
DE102010046790A1 (en) * 2010-09-28 2012-03-29 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component comprises two semiconductor chips, a conversion element, a prefabricated housing having a cavity, and a continuous emission spectrum, where the semiconductor chips comprise an active layer
CN103493226B (en) * 2011-04-22 2016-09-28 株式会社东芝 White light source and include the white light source system of described white light source
DE102011085645B4 (en) * 2011-11-03 2014-06-26 Osram Gmbh Light emitting diode module and method for operating a light emitting diode module
US8779687B2 (en) * 2012-02-13 2014-07-15 Xicato, Inc. Current routing to multiple LED circuits
DE102012202927A1 (en) * 2012-02-27 2013-08-29 Osram Gmbh Light source with led chip and fluorescent layer
JP6363061B2 (en) * 2012-04-06 2018-07-25 フィリップス ライティング ホールディング ビー ヴィ White light emitting module
DE102012111564A1 (en) * 2012-11-29 2014-06-18 Osram Opto Semiconductors Gmbh Illumination device for lighting different materials e.g. newsprint, has white light comprising color rendering index and blue light portion, where peak wavelength of blue light portion is provided with specific nanometer
FR3001334B1 (en) * 2013-01-24 2016-05-06 Centre Nat De La Rech Scient (Cnrs) Process for producing monolithic white diodes
DE102013205179A1 (en) * 2013-03-25 2014-09-25 Osram Gmbh A method of manufacturing an electromagnetic radiation emitting assembly and electromagnetic radiation emitting assembly
WO2015031179A1 (en) * 2013-08-27 2015-03-05 Glo Ab Molded led package and method of making same
JP6358457B2 (en) 2014-01-20 2018-07-18 パナソニックIpマネジメント株式会社 Light emitting device, illumination light source, and illumination device
JP2016219519A (en) * 2015-05-18 2016-12-22 サンケン電気株式会社 Light-emitting device
US10303040B2 (en) * 2017-02-08 2019-05-28 Kapteyn Murnane Laboratories, Inc. Integrated wavelength conversion and laser source

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1993152B1 (en) * 1996-06-26 2014-05-21 OSRAM Opto Semiconductors GmbH Light-emitting semiconductor device with luminescence conversion element
US7014336B1 (en) * 1999-11-18 2006-03-21 Color Kinetics Incorporated Systems and methods for generating and modulating illumination conditions
US6577073B2 (en) * 2000-05-31 2003-06-10 Matsushita Electric Industrial Co., Ltd. Led lamp
TW595012B (en) * 2001-09-03 2004-06-21 Matsushita Electric Ind Co Ltd Semiconductor light-emitting device, light-emitting apparatus and manufacturing method of semiconductor light-emitting device
JP3707688B2 (en) * 2002-05-31 2005-10-19 スタンレー電気株式会社 Emitting device and manufacturing method thereof
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
JP2004356141A (en) * 2003-05-27 2004-12-16 Stanley Electric Co Ltd Semiconductor optical element
US7268370B2 (en) * 2003-06-05 2007-09-11 Matsushita Electric Industrial Co., Ltd. Phosphor, semiconductor light emitting device, and fabrication method thereof
TWI263356B (en) * 2003-11-27 2006-10-01 Kuen-Juei Li Light-emitting device
US7318651B2 (en) * 2003-12-18 2008-01-15 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Flash module with quantum dot light conversion
TWI314786B (en) 2004-01-27 2009-09-11
DE102004026125A1 (en) 2004-05-28 2005-12-22 Osram Opto Semiconductors Gmbh Optoelectronic component and method for its production
DE102004052245A1 (en) 2004-06-30 2006-02-02 Osram Opto Semiconductors Gmbh Radiation emitting semiconductor chip e.g. luminescent diode chip, has reemission structure, and reemission layer formed for widening spectrums of chip against respective spectrum of radiation of peak wavelength
DE102004047763A1 (en) 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Multiple LED array
US7102152B2 (en) 2004-10-14 2006-09-05 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Device and method for emitting output light using quantum dots and non-quantum fluorescent material
US7404652B2 (en) * 2004-12-15 2008-07-29 Avago Technologies Ecbu Ip Pte Ltd Light-emitting diode flash module with enhanced spectral emission
US8125137B2 (en) 2005-01-10 2012-02-28 Cree, Inc. Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same
US7821023B2 (en) * 2005-01-10 2010-10-26 Cree, Inc. Solid state lighting component
US7859006B2 (en) * 2005-02-23 2010-12-28 Mitsubishi Chemical Corporation Semiconductor light emitting device member, method for manufacturing such semiconductor light emitting device member and semiconductor light emitting device using such semiconductor light emitting device member
CA2614575C (en) * 2005-04-06 2015-03-31 Tir Technology Lp White light luminaire with adjustable correlated colour temperature
TWM279023U (en) 2005-04-29 2005-10-21 Super Nova Optoelectronics Cor White light emitting diode device
JP2007049114A (en) * 2005-05-30 2007-02-22 Sharp Corp Light emitting device and method of manufacturing the same
CA2597697C (en) 2005-06-23 2014-12-02 Rensselaer Polytechnic Institute Package design for producing white light with short-wavelength leds and down-conversion materials
DE102006020529A1 (en) * 2005-08-30 2007-03-01 Osram Opto Semiconductors Gmbh Optoelectronic component has semiconductor body emitting electromagnetic radiation that passes through an optical element comprising wavelength conversion material
CN101253637A (en) 2005-08-30 2008-08-27 奥斯兰姆奥普托半导体有限责任公司 Optoelectronic component
DE102005041064A1 (en) 2005-08-30 2007-03-01 Osram Opto Semiconductors Gmbh Surface-mounted optoelectronic component has semiconductor chip with a molded body shaped on the chip
DE102005046450A1 (en) * 2005-09-28 2007-04-05 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip, method for its production and optoelectronic component
TWI266441B (en) * 2005-10-26 2006-11-11 Lustrous Technology Ltd COB-typed LED package with phosphor
JP4793029B2 (en) * 2006-03-03 2011-10-12 三菱化学株式会社 Lighting device
US8174032B2 (en) 2006-03-16 2012-05-08 Light Engines Corporation Semiconductor white light sources
US8035287B2 (en) * 2006-04-25 2011-10-11 Koninklijke Philips Electronics N.V. Fluorescent lighting creating white light
DE102006024165A1 (en) * 2006-05-23 2007-11-29 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Optoelectronic semiconductor chip with a wavelength conversion substance and optoelectronic semiconductor component with such a semiconductor chip and method for producing the optoelectronic semiconductor chip
DE102006025964A1 (en) 2006-06-02 2007-12-06 Osram Opto Semiconductors Gmbh Multiple quantum well structure, radiation-emitting semiconductor body and radiation-emitting component
JP4989936B2 (en) * 2006-07-27 2012-08-01 株式会社朝日ラバー Lighting device
JP2008075080A (en) * 2006-08-23 2008-04-03 Mitsubishi Chemicals Corp Light emitting apparatus, image displaying apparatus, and illuminating apparatus
JP2008111080A (en) * 2006-10-31 2008-05-15 Mitsubishi Chemicals Corp Method of surface-treating fluorescent substance, fluorescent substance, fluorescent substance-containing composition, light emitting device, image display device, and illuminating device
EP2089916A1 (en) * 2006-11-07 2009-08-19 Philips Intellectual Property & Standards GmbH Arrangement for emitting mixed light
DE102007029391A1 (en) * 2007-06-26 2009-01-02 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip
US8324641B2 (en) * 2007-06-29 2012-12-04 Ledengin, Inc. Matrix material including an embedded dispersion of beads for a light-emitting device
TWI355097B (en) * 2007-07-18 2011-12-21 Epistar Corp Wavelength converting system
US20090026913A1 (en) * 2007-07-26 2009-01-29 Matthew Steven Mrakovich Dynamic color or white light phosphor converted LED illumination system
DE102007058723A1 (en) 2007-09-10 2009-03-12 Osram Opto Semiconductors Gmbh Light emitting structure
US20090117672A1 (en) * 2007-10-01 2009-05-07 Intematix Corporation Light emitting devices with phosphor wavelength conversion and methods of fabrication thereof
US7915627B2 (en) * 2007-10-17 2011-03-29 Intematix Corporation Light emitting device with phosphor wavelength conversion
US8119028B2 (en) * 2007-11-14 2012-02-21 Cree, Inc. Cerium and europium doped single crystal phosphors

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2010040327A1 *

Also Published As

Publication number Publication date
TWI398024B (en) 2013-06-01
WO2010040327A1 (en) 2010-04-15
CN102177594A (en) 2011-09-07
US8410507B2 (en) 2013-04-02
US20110248295A1 (en) 2011-10-13
KR20110087264A (en) 2011-08-02
JP5827895B2 (en) 2015-12-02
KR101612576B1 (en) 2016-04-14
JP2012505527A (en) 2012-03-01
DE102008050643A1 (en) 2010-04-08
CN102177594B (en) 2014-07-02
TW201025679A (en) 2010-07-01

Similar Documents

Publication Publication Date Title
EP1766692B1 (en) Light emitting device
CN101842907B (en) Color tunable light emitting device
JP5951180B2 (en) Emitter package with saturation conversion material
JP4386693B2 (en) Led lamp and the lamp unit
KR101266130B1 (en) Package design for producing white light with short-wavelength leds and down-conversion materials
CN102667320B (en) A lighting apparatus defined spectral energy distribution
CA2755838C (en) Illumination device with remote luminescent material
US8508127B2 (en) High CRI lighting device with added long-wavelength blue color
TWI344705B (en) Multiple component solid state white light
TWI502154B (en) Led-based illumination module with preferentially illuminated color converting surfaces
US8119028B2 (en) Cerium and europium doped single crystal phosphors
US8529104B2 (en) Lighting device
US8205998B2 (en) Phosphor-centric control of solid state lighting
US20070284563A1 (en) Light emitting device including rgb light emitting diodes and phosphor
CN1227749C (en) Lighting system
US8441179B2 (en) Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
US7646032B2 (en) White light LED devices with flat spectra
US20060181192A1 (en) White LEDs with tailorable color temperature
US20110176305A1 (en) Radiation-emitting apparatus
US20070090381A1 (en) Semiconductor light emitting device
DE102013007698A1 (en) LED lamps with improved light quality
US8791642B2 (en) Semiconductor light emitting devices having selectable and/or adjustable color points and related methods
EP2650934A1 (en) Light-emitting device
US8796952B2 (en) Semiconductor light emitting devices having selectable and/or adjustable color points and related methods
US8511851B2 (en) High CRI adjustable color temperature lighting devices

Legal Events

Date Code Title Description
AK Designated contracting states:

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

AX Request for extension of the european patent to

Countries concerned: ALBARS

17P Request for examination filed

Effective date: 20101111

RIN1 Inventor (correction)

Inventor name: WINDISCH, REINER

Inventor name: PETER, MATTHIAS

Inventor name: STAUSS, PETER

Inventor name: BAUMANN, FRANK

DAX Request for extension of the european patent (to any country) deleted
18D Deemed to be withdrawn

Effective date: 20160402