EP2283171A1 - Method for selectively depositing a precious metal on a substrate by the ultrasound ablation of a mask element, and device thereof - Google Patents

Method for selectively depositing a precious metal on a substrate by the ultrasound ablation of a mask element, and device thereof

Info

Publication number
EP2283171A1
EP2283171A1 EP09761646A EP09761646A EP2283171A1 EP 2283171 A1 EP2283171 A1 EP 2283171A1 EP 09761646 A EP09761646 A EP 09761646A EP 09761646 A EP09761646 A EP 09761646A EP 2283171 A1 EP2283171 A1 EP 2283171A1
Authority
EP
European Patent Office
Prior art keywords
phase
masking
metal support
deposition
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP09761646A
Other languages
German (de)
French (fr)
Other versions
EP2283171B1 (en
Inventor
Sylvain Rochon
Jean-Yves Hihn
Loïc HALLEZ
Francis Touyeras
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Universite de Franche-Comte
C&K Components SAS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Universite de Franche-Comte
C&K Components SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Universite de Franche-Comte, C&K Components SAS filed Critical Centre National de la Recherche Scientifique CNRS
Publication of EP2283171A1 publication Critical patent/EP2283171A1/en
Application granted granted Critical
Publication of EP2283171B1 publication Critical patent/EP2283171B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02Electroplating of selected surface areas
    • C25D5/022Electroplating of selected surface areas using masking means
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1603Process or apparatus coating on selected surface areas
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1603Process or apparatus coating on selected surface areas
    • C23C18/1605Process or apparatus coating on selected surface areas by masking
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/1803Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1824Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/42Coating with noble metals
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating

Definitions

  • the invention relates to a method for the selective deposition of a precious metal on a metallic support, such as a metallic support strip, by ultrasonic ablation of a masking element.
  • the invention also relates to a device for implementing a step of the deposition process.
  • the invention relates more particularly to a process for the selective deposition of a precious metal on a metallic support, which process comprises successively:
  • a masking step consisting in depositing a masking element on a face to be treated of the metallic support in order to cover the face to be treated,
  • a step of selective ablation of at least one portion to be removed from the previously deposited masking element which consists in discovering a corresponding deposition zone of said face to be treated of the metallic support, a deposition step of the metal valuable on the deposit area previously discovered.
  • Electroplating is a process for applying to at least one deposition area of a surface to be treated with a metallic support, a metallic deposition in solution in a liquid by means of a continuous electric current or drawn.
  • the deposit zone thus covered by the precious metal is for example intended to constitute an electrical contact zone.
  • the metal carrier is, for example, in the form of a metallic support strip which consists of a series of components connected to each other.
  • Such a strip shape allows the continuous metallization of the support strip to be driven, for example, between rotating rollers on a surface treatment line, so as to allow the continuous deposit of the precious metal on the strip of metal. support.
  • This type of selective deposition comprises a masking step which consists in depositing a masking element on the face to be treated of the metallic support, the masking step being followed by a selective ablation step.
  • the selective ablation step consists in removing at least a portion of the previously deposited masking element in order to discover at least one deposition zone of the face to be treated of the metal support.
  • the selective deposition process comprises a step of depositing the precious metal on the previously discovered deposit zone of the face to be treated of the metallic support.
  • this precious metal deposition step is performed by electroplating.
  • the electroplating here makes it possible to deposit an adherent layer of small thickness of the precious metal, ically on the deposition area discovered.
  • EP-B1-1409.772 discloses a method of selective deposition of a precious metal on a metal support, the selective removal step of the masking element is performed by means of a laser. The portion to be removed from the masking element is subjected to a laser beam which destroys the portion to be removed, in order to discover a deposition zone of the face to be treated of the metal support.
  • the deposit zone thus discovered is covered by the precious metal during a deposition step of the precious metal.
  • the ablation of the portion to be removed from the masking element by a laser has the disadvantage of heating the metal support, more precisely the deposition area of the support, which may deteriorate the metallic support and oxidize.
  • the invention proposes a selective deposition process, the ablation step of which does not damage the metal support.
  • the invention proposes a method of the type described above, characterized in that the selective ablation step consists of irradiating with ultrasonic waves the portion to be removed from the masking element, so as to destroy ire said portion to be removed to discover said corresponding deposition area.
  • the ultrasonic waves constitute a beam of ultrasonic waves which are focussed so that the ultrasonic waves converge towards the portion to be removed from the masking element, in order to destroy the portion to be removed;
  • the ultrasound ablation step is carried out in an aqueous medium;
  • the method comprises a preliminary step that is carried out before the masking step and that comprises successively:
  • a first phase of rinsing of the metallic support a first phase of activation of the metallic support, a phase of nickel-plating of the metallic support, a second phase of rinsing of the metal support, a first phase of drying the metallic support;
  • the masking step comprises successively:
  • the masking element deposited during the masking step is capable of being polymerized, and in that the masking element is soiled by polymerization during the soil phase; masking;
  • the masking element deposited during the masking step is an element of the type of a resin, a paint or an ink
  • the masking element which is deposited during the masking step is deposited on the face to be treated of the metallic support by an electrochemical deposition process; the step of depositing the precious metal successively comprises:
  • the deposition phase of the precious metal on the deposition zone discovered on the face to be treated of the metallic support is made by electroplating;
  • the method comprises a step of el imination of the masking element remaining at the end of the ablation step, the said elimination step being carried out following the step of depositing the precious metal;
  • the process comprises a finishing step which comprises successively:
  • a fourth phase of rinsing of the metallic support a third phase of activation of the metallic support, a phase of tinning of the metal support, a fifth phase of rinsing of the metal support,
  • the invention also proposes a device for implementing the method, characterized in that it comprises:
  • an ultrasonic wave emitting means which is movably mounted, with respect to the metallic support, on a structural element of the device so that the emitting means is able to occupy at least one ablation position in which the ultrasonic waves irradiate the portion to be removed from the masking element,
  • the device comprises motorized means for moving the ultrasound wave transmission means to its ablation position, and in that the device comprises means for controlling said motorized means.
  • FIG. 1 is a schematic perspective view, which illustrates a section of a metal support strip
  • FIG. 2 is a schematic perspective view, which illustrates the support strip of FIG. 1 after a step of masking the support strip by a masking element, according to a selective deposition process according to the invention
  • FIG. 3 is a schematic perspective view, which illustrates the support strip of FIG. 2 after a step of ablation of a portion to be removed from the masking element, according to the method;
  • FIG. 4 is a schematic perspective view, which illustrates the support strip of FIG. 3 after a step of deposition of a precious metal on deposition zones of the support strip discovered during the step of ablation, according to the method;
  • FIG. 5 is a schematic perspective view, which illustrates the support band of FIG. 4 after a step of removing the masking element remaining after the step of depositing the precious metal, according to the method;
  • FIG. 6 is a diagrammatic view illustrating an ultrasound device for implementing the ablation step, comprising means for emitting ultrasonic waves, a transducer of which is mounted mobile in 3 degrees of freedom;
  • FIG. 7 is a schematic view illustrating the ultrasonic wave emitting means of FIG. 6 in an ablation position of the masking element of the support strip during the ablation step;
  • FIG. 8 is a schematic detail view, which illustrates the irradiation of the masking element by the ultrasonic wave emission means during the ablation step.
  • the longitudinal, vertical and transverse orientations according to the L, V, T trihedron represented in the figures will be used without limitation.
  • FIG. 1 shows a section of a metal support strip 10, one of which is to be treated by a process for the selective deposition of a precious metal.
  • FIG. 1 represents here only a portion of the metal support strip 10. Indeed, the support strip 10, in its entirety, extends in a longitudinal direction, so that the support strip 10 is able to be moved during the process, for example between rotating rollers (not shown), on a surface treatment line (not shown).
  • the support strip 10 is constituted by a series of elements 14 to be treated which are connected together to form the support strip 10.
  • the elements 14 to be treated are, for example, electrical contact elements, two of which are shown in FIG. 1, which are for example made by cutting and deformation of the support strip 10.
  • the selective deposition process comprises a preliminary step of preparing the face to be treated 12 of the section of the support strip 10.
  • the preliminary preparation step comprises a degreasing phase of the face to be treated 12 of the support strip 10, by example by immersion of the section of the support strip 1 0 in a trichlorethylene bath.
  • the preliminary preparation step comprises a stripping phase of the face to be treated 1 2 of the section of the support strip 1 0, which is carried out following the degreasing phase.
  • the preliminary preparation step comprises a first rinsing phase, which is su ivie by a first activation phase.
  • the first activation phase consists in activating the face to be treated 1 2 of the section of the support band 1 0, for example by immersing the support 1 0 in a sulfuric acid bath.
  • the first activation phase is followed by a nickel phase of the preliminary step.
  • the nickel-plating phase consists in depositing a nickel-protective layer on the face to be treated 1 2 of the section of the support strip 1 0, in order to protect the face to be treated 12 against corrosion and to prevent migration. and the diffusion of the metallic compounds of the face to be treated 1 2.
  • the preliminary stage of preparation of the method comprises a second phase of rinsing the face to be treated 1 2 of the section of the support strip 1 0, that i is Realized after the nickeling phase.
  • the preliminary step of the method comprises a first phase of drying the face to be treated 1 2 of the section of the support strip 10.
  • the preliminary step of preparing the process is followed by a masking step.
  • the masking step comprises a deposition phase that consists of depositing a masking element 1 6, or coating, on the face to be treated 1 2 of the section of the support strip 10, in order to cover the face to be treated 12 as shown in Figure 2.
  • the masking element 16 is here a resin 16 which is deposited on the face to be treated 12 by electrochemical deposition, so that the resin 16 covers the face to be treated 12 of the section of the support strip 10 homogeneously and with a constant thickness.
  • Resin 16 is here a resin which is capable of being polymerized and which is constituted based on acrylate and epoxide.
  • the masking step comprises a solidification phase which is carried out following the deposition phase, and which consists in solidifying the resin 16 previously deposited on the section of the support strip 10.
  • the masking resin 16 successively undergoes a polymerization operation, for example by being passed through an oven, or by cataphoresis, and then a crosslinking operation, here by irradiating the resin 16 with ultraviolet rays.
  • the resin 16, after the solidification phase, must respond to mechanical stresses that are related to the driving of the support strip 10 during the process on the surface treatment line.
  • the resin 16 deposited on the support strip 10 must be particularly resistant to torsion, bending, compression and shearing.
  • the resin 16 is resistant to the products that may be used during the various subsequent phases of the process, in particular to the activation, rinsing and electroplating phases of the precious metal, which is described in FIG. following the description.
  • the deposition process comprises a selective ablation step which is performed after the masking step described above.
  • the selective ablation step consists in irradiating with ultrasonic waves 22 a plurality of portions to be removed 17 (of which two are shown in Figure 2) of the resin 1 6 masking previously deposited, so as to remove by destruction the portions to remove 1 7, as shown in Figure 8. Once removed, each portion to remove 17 of the resin
  • the ultrasonic waves 22 are focalized so as to converge towards a convergence point January 9, so that the ultrasonic wave beam 22 is of a substantially conical shape with a decreasing section towards the portion to be removed 1 7 from the element Masking 16.
  • the support band 10 is driven in displacement during the ablation step, according to a direction which is generally orthogonal to the first axis A of propagation of the ultrasonic waves, here in a long longitudinal direction, by training means. (not shown)
  • the elements 14 to be treated which constitute the support strip 1 0 are arranged successively in line with the ultrasonic wave beam 22, so that the portion to be removed 1 7 each element 14 to be treated is arranged on the point of convergence 1 9, and so that the portion to be removed 1 7 so targeted is destroyed by the ultrasonic waves 22.
  • This type of ultrasonic wave 22 is known in the English terminology " High Intensity Focused Ultrasound.
  • the ultrasonic ablation step of the selective deposition process is here carried out in an aqueous medium, whereby the section of the support strip 10, more precisely the deposition zone 18, does little or no heat when it is irradiated by the ultrasonic waves 22.
  • the deposition process comprises a step of depositing a precious metal 32, which is performed following the ablation step.
  • the deposition step comprises a second activation phase which consists in activating the deposition zones 18 of the face to be treated 12 of the section of the support band 10, for example by immersing the support 10 in a sulfuric acid bath. .
  • the deposition step comprises a deposition phase which is performed following the second activation phase and which consists in depositing a precious metal 32 on the deposition zones 18 of the face to be treated 12 of the section of the strip of deposition. 10.
  • the deposition zones 18 correspond to the deposition zones which are discovered following the ablation of the portions to be removed 17 from the masking resin 16, during the ablation step.
  • the precious metal 32 is, for example, gold, silver, tin mixed with lead, pure tin, or nickel.
  • the precious metal 32 is deposited electroplating here, which makes it possible to deposit an adherent layer of small thickness of the precious metal 32 only on the deposition zones 18 discovered, as can be seen in FIG. 4.
  • the precious metal 32 can be deposited by conventional methods of depositing the type d it "by jet", “by spot”, “by brushing” or by any other type of deposition process for depositing a layer of the precious metal 32.
  • the deposition step comprises a third rinsing phase of the section of the support strip 10.
  • the selective deposition process includes a finishing step that is performed after the deposition step.
  • the finishing step comprises a third activation phase of the support band 1 0.
  • the activation phase is followed by a tinning phase of the zones of deposits 1 8 of the face to be treated 1 2 of the section of the support strip 10, the zones of deposits 1 8 being previously covered with the precious metal 32.
  • Tinning is provided for the subsequent welding of a component (not shown) to each tinned deposition zone 18.
  • finishing step comprises a fourth rinsing phase of the portion of the support strip 1 0 which is followed by a second drying phase of the support strip 1 0.
  • the invention also relates to a device 20 for implementing the ablation step of the method, which is shown in FIGS. 6 to 8.
  • the device 20 has a tray 28 which is open vertically upward and contains an aqueous substance 30, such as water.
  • the tray 28 has a first vertical wall 26a which delimits a first light 32a, and a second vertical wall 26b opposite which delimits a second light 32b.
  • the first lumen 32a and the second lumen 32b are arranged opposite and each is in the form of a transverse slot. As illustrated in FIG. 7, the section of the support strip 1 0 extends longitudinally in the tray 28, from the first light 32a to the second light 32b, so that the section of the light strip support 10 is immersed in the aqueous substance 30. The support strip 10 is able to be driven longitudinally through the tray 28.
  • the aqueous substance 30 flows continuously from the first light 32a and the second light 32b, up to a container (not shown) which is arranged below the tray
  • the aqueous substance which is contained in the container is filtered and re-injected into the tank 28 by means of a pumping device (not shown).
  • the device 20 comprises an arcuate structural element 34 which is curved upwards and is fixed to the tray 28, so that the structural element 34 extends transversely above the tray 28.
  • the structural element 34 delimits a glissière 36 which extends transversely facing the aqueous substance 30 of the tank 28.
  • the device 20 comprises a transducer 24 which constitutes a means for the em ission of the ultrasonic waves 22 and which is movably mounted on the structural element 34.
  • the transducer 24 is arranged so that it is immersed in the aqueous substance 30 of the tank 28.
  • the transducer 24 is carried by a carriage 38 which is movably mounted on the structural element 34.
  • the carriage 38 comprises an upper attachment finger 40, a first upper portion 40a of which is received in a sliding direction in the glissier 36 complementary to the structural element 34 and a second lower section 40b is reliied on a first median branch 42a of a U-shaped arm 42.
  • the device 20 comprises a first motorized drive means (not shown) that allows the driving of the upper portion 40a of the hooking finger 40 into the associated link 36 of the structural element 34.
  • the gripping finger 40 extends here along the first propagation axis of the ultrasonic waves 22, substantially orthogonal to the structural element 34.
  • the first upper portion 40a and the second lower portion 40b of the latching finger 40 are slidably mounted one inside the other along the first axis A, in the manner of a jack, so that the axial length the hooking finger 40 is adjustable.
  • the device 20 comprises a second motorized drive means (not shown) which allows the sliding drive of the first upper portion 40a relative to the second lower portion 40b of the hooking finger 40, along the first axis A.
  • the U-shaped arm 42 has a second limb 42b and a third limb 42c which extend parallel from the first medial branch 42a and which are each connected to the transducer 24, so that the transducer 24 is pivotally mounted between the second limb 42b and the third leg 42c of the arm 42 about a second pivot axis B.
  • the second pivot axis B is here orthogonal to the first propagation axis of the ultrasonic waves 22.
  • the device 20 comprises a third motorized drive means (not shown) which allows the transducer 24 to be pivotally driven about the second pivot axis B.
  • the first, second and third motorized drive means are controlled by first control means (not shown).
  • the first axis A for propagation of the ultrasonic waves 22 is inclinable with respect to the upper surface 12 of the support strip 10, by moving the latching finger 40 in the slideway 36 of the structural element 34 and by pivoting of the transducer 24 around the second pivot axis B.
  • the ultrasonic waves 22 when the first axis A of propagation of the ultrasonic waves 22 is inclined relative to the face of 12, the ultrasonic waves 22 which are reflected by the face to be treated 1 2 do not irradiate, or little, the transducer 24.
  • the distance between the transducer 24 and the support strip 10 is adjustable by varying the axial length of the gripping finger 40, so as to be able to precisely arrange the point of convergence 19 of the ultrasonic waves 22 on the portion to be removed 1 7 from the support strip 1 0.
  • the transducer 24 is able to occupy a plurality of ablation positions in each of which the ultrasonic waves 22 irradiate the portion to be removed 1 7 from the masking element 1 6 of the support band 10.
  • the transducer 24 is able to scan the portion to be removed 1 7 of the masking element 1 6 of the support band 1 0.
  • the transducer 24 is associated with second control means (not shown) of the transducer 24, for adjusting the power and the frequency of the ultrasonic waves 22, and for adjusting the irradiation time of the portions to be removed. of the resin 1 6 masking by the ultrasonic waves 22.
  • the ultrasonic waves 22 are emitted by the transducer 24 pulsed in the manner of a pulsed signal.
  • the Beau of ultrasonic waves 22 is here between d ix and one thousand watts, the frequency is between one and d ix mega Hertz and irradiation time is between one hundred microseconds to a few minutes.
  • the focal distance between the point of convergence 1 9 and the transducer 24 is here between d ix and two hundred millimeters.
  • the device 20 comprises a focalization means
  • the deposition process comprises an additional step of removing the remaining masking element 16, which is produced as a result of the metal deposition step. valuable 32 and before the finishing step.
  • the further removal step is to remove the masking member 16 that has not been removed during the ablation step, as shown in FIG. 5.
  • the elimination step is followed by a fifth rinsing phase of the section of the support strip 10.
  • the masking element 16 is in the form of an adhesive film which is bonded to the face to be treated 12 of the support strip 10.
  • the resin 16 as a masking element 16 may be an ink, such as polyamide ink, or a paint, such as acrylic paint, or a polyurethane-based resin 16.
  • the polymerization of the resin 16 during the solidification phase of the masking step is carried out by evaporation of a solvent which is contained in the resin 16.
  • the resin 16, whether a paint, an ink, a resin 16 based on polyurethane or an acrylate-based epoxy resin, can be deposited on the face to be treated 12 of the support strip 10 to the during the deposition step of the masking step, for example by spray spraying, electrochemical deposition or by vacuum deposition.
  • the resin 16 may be deposited on the face to be treated 12 of the support strip 10 during the deposition phase of the masking step by means of a brush or a roller.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention relates to a method for selectively depositing a precious metal (32) on a metal substrate (10), the method sequentially comprising: a masking step, consisting of depositing a mask element (16) on one treated surface (12) of the metal substrate (10); a selective ablation step, for the selective ablation of at least one removed portion (17) of the pre-deposited mask element (16) to expose at least one deposition area (18) of said treated surface (12) of the metal substrate (10); a deposition step, for depositing the precious metal (32) on said pre-exposed deposition area (18); and characterized in that the selective ablation step involves the ultrasound wave (22) irradiation of said removed portion (17) of the mask element (16) to destroy said removed portion (17). The invention also relates to an ultrasound device (20) for implementing the selective ablation step.

Description

« Procédé de dépôt sélectif d'un métal précieux sur un support par ablation ultrasonore d'un élément de masquage et son d ispositif » "Process for selectively depositing a precious metal on a support by ultrasonic ablation of a masking element and its ispositif"
L'invention concerne un procédé de dépôt sélectif d'un métal précieux sur un support métall ique, comme une bande métall ique de support, par ablation ultrasonore d'un élément de masquage.The invention relates to a method for the selective deposition of a precious metal on a metallic support, such as a metallic support strip, by ultrasonic ablation of a masking element.
L'invention concerne aussi un dispositif pour la m ise en œuvre d'une étape du procédé de dépôt. L'invention concerne plus particul ièrement un procédé de dépôt sélectif d'un métal précieux sur un support métall ique, procédé qu i comporte successivement :The invention also relates to a device for implementing a step of the deposition process. The invention relates more particularly to a process for the selective deposition of a precious metal on a metallic support, which process comprises successively:
- une étape de masquage qui consiste à déposer un élément de masquage sur une face à traiter du support métall ique afin de couvrir lad ite face à traiter,a masking step consisting in depositing a masking element on a face to be treated of the metallic support in order to cover the face to be treated,
- une étape d'ablation sélective d'au moins une portion à enlever de l'élément de masquage préalablement déposé, qui consiste à découvrir une zone de dépôt correspondante de ladite face à traiter du support métall ique, - une étape de dépôt du métal précieux sur lad ite zone de dépôt préalablement découverte.a step of selective ablation of at least one portion to be removed from the previously deposited masking element, which consists in discovering a corresponding deposition zone of said face to be treated of the metallic support, a deposition step of the metal valuable on the deposit area previously discovered.
On connaît de nombreux procédés de dépôt d'un métal précieux sur un support métall ique, ou substrat, notamment des procédés de dépôt d'un métal précieux par réaction électroch imique, comme la galvanoplastie.Numerous processes are known for depositing a precious metal on a metal support, or substrate, in particular processes for depositing a precious metal by electrochemical reaction, such as electroplating.
La galvanoplastie est un procédé permettant d'appl iquer sur au moins une zone de dépôt d'une face à traiter d'un support métall ique, un dépôt métall ique en d issolution dans un l iquide au moyen d'un courant électrique continu ou puisé. La zone de dépôt ainsi recouverte par le métal précieux est par exemple destinée à constituer une zone de contact électrique. Le support métall ique est par exemple de la forme d'une bande métall ique de support qu i est constituée par une série de composants raccordés les uns aux autres.Electroplating is a process for applying to at least one deposition area of a surface to be treated with a metallic support, a metallic deposition in solution in a liquid by means of a continuous electric current or drawn. The deposit zone thus covered by the precious metal is for example intended to constitute an electrical contact zone. The metal carrier is, for example, in the form of a metallic support strip which consists of a series of components connected to each other.
Une telle forme en bande permet l'entraînement de la bande de support métall ique en continu, par exemple entre des rouleaux rotatifs sur une l igne de traitement de surface, de man ière à permettre le dépôt en continu du métal précieux sur la bande de support.Such a strip shape allows the continuous metallization of the support strip to be driven, for example, between rotating rollers on a surface treatment line, so as to allow the continuous deposit of the precious metal on the strip of metal. support.
Ce dépôt de métal précieux en continu peut être réal isé notamment par des procédés de dépôt dit « par jet » , « par spot » ou « par brossage » .This deposit of precious metal continuously can be realisé notably by depositing methods said "jet", "spot" or "by brushing".
On connaît aussi un procédé de dépôt sélectif d'un métal précieux sur un support métall ique, qui consiste à déposer le métal précieux de façon sélective sur au moins une zone de dépôt prédéterm inée d'une face à traiter du support métall ique, de façon à économ iser le métal précieux.Also known is a process for selectively depositing a precious metal on a metallic support, which consists of depositing the precious metal selectively on at least one predetermined deposition zone of a face to be treated with the metallic support, way to save precious metal.
Ce type de dépôt sélectif comporte une étape de masquage qui consiste à déposer un élément de masquage sur la face à traiter du support métall ique, l'étape de masquage étant suivie par une étape d'ablation sélective.This type of selective deposition comprises a masking step which consists in depositing a masking element on the face to be treated of the metallic support, the masking step being followed by a selective ablation step.
L'étape d'ablation sélective consiste à enlever au moins une portion de l'élément de masquage préalablement déposé, afin de découvrir au moins une zone de dépôt de la face à traiter du support métall ique. Enfin , le procédé de dépôt sélectif comporte une étape de dépôt du métal précieux sur la zone de dépôt préalablement découverte de la face à traiter du support métall ique.The selective ablation step consists in removing at least a portion of the previously deposited masking element in order to discover at least one deposition zone of the face to be treated of the metal support. Finally, the selective deposition process comprises a step of depositing the precious metal on the previously discovered deposit zone of the face to be treated of the metallic support.
Selon l'art antérieur, cette étape de dépôt du métal précieux est réal isée par galvanoplastie. La galvanoplastie permet ici de déposer une couche adhérente de faible épaisseur du métal précieux, un iquement sur la zone de dépôt découverte. Le document EP-B1 -1 .409.772 décrit un procédé de dépôt sélectif d'un métal précieux sur un support métallique, dont l'étape d'ablation sélective de l'élément de masquage est réalisée au moyen d'un laser. La portion à enlever de l'élément de masquage est soumise à un faisceau de rayons laser qui détruit la portion à enlever, afin de découvrir une zone de dépôt de la face à traiter du support métall ique.According to the prior art, this precious metal deposition step is performed by electroplating. The electroplating here makes it possible to deposit an adherent layer of small thickness of the precious metal, ically on the deposition area discovered. EP-B1-1409.772 discloses a method of selective deposition of a precious metal on a metal support, the selective removal step of the masking element is performed by means of a laser. The portion to be removed from the masking element is subjected to a laser beam which destroys the portion to be removed, in order to discover a deposition zone of the face to be treated of the metal support.
Ensu ite, la zone de dépôt ainsi découverte est recouverte par le métal précieux au cours d'une étape de dépôt du métal précieux.Subsequently, the deposit zone thus discovered is covered by the precious metal during a deposition step of the precious metal.
L'ablation de la portion à enlever de l'élément de masquage par un laser présente l'inconvén ient de chauffer le support métall ique, plus précisément la zone de dépôt du support, ce qu i risque de détériorer le support métall ique et de l'oxyder.The ablation of the portion to be removed from the masking element by a laser has the disadvantage of heating the metal support, more precisely the deposition area of the support, which may deteriorate the metallic support and oxidize.
Pour reméd ier notamment à cet inconvén ient, l'invention propose un procédé de dépôt sélectif dont l'étape d'ablation permet de ne pas détériorer le support métall ique.To remedy this drawback in particular, the invention proposes a selective deposition process, the ablation step of which does not damage the metal support.
Dans ce but, l'invention propose un procédé du type décrit précédemment, caractérisé en ce que l'étape d'ablation sélective consiste à irrad ier par des ondes ultrasonores lad ite portion à enlever de l'élément de masquage, de façon à détru ire ladite portion à enlever pour découvrir ladite zone de dépôt correspondante. Selon d'autres caractéristiques de l'invention :For this purpose, the invention proposes a method of the type described above, characterized in that the selective ablation step consists of irradiating with ultrasonic waves the portion to be removed from the masking element, so as to destroy ire said portion to be removed to discover said corresponding deposition area. According to other features of the invention:
- les ondes ultrasonores constituent un faisceau d'ondes ultrasonores qu i sont focal isées de sorte que les ondes ultrasonores convergent vers la portion à enlever de l'élément de masquage, afin de détru ire lad ite portion à enlever ; - l'étape d'ablation par ultrasons est réal isée dans un mil ieu aqueux ; - le procédé comporte une étape prél iminaire qu i est réal isée avant l'étape de masquage et qu i comporte successivement :the ultrasonic waves constitute a beam of ultrasonic waves which are focussed so that the ultrasonic waves converge towards the portion to be removed from the masking element, in order to destroy the portion to be removed; the ultrasound ablation step is carried out in an aqueous medium; the method comprises a preliminary step that is carried out before the masking step and that comprises successively:
-- une phase de dégraissage du support métall ique, -- une phase de décapage du support métall ique,a degreasing phase of the metallic support, a stripping phase of the metallic support,
-- une première phase de rinçage du support métall ique, -- une première phase d'activation du support métall ique, -- une phase de nickelage du support métall ique, -- une deuxième phase de rinçage du support métall ique, -- une première phase de séchage du support métall ique ;a first phase of rinsing of the metallic support, a first phase of activation of the metallic support, a phase of nickel-plating of the metallic support, a second phase of rinsing of the metal support, a first phase of drying the metallic support;
- l'étape de masquage comporte successivement :the masking step comprises successively:
-- une phase de dépôt de l'élément de masquage sur la face à traiter du support métall ique,a deposition phase of the masking element on the face to be treated of the metallic support,
-- une phase de sol id ification de l'élément de masquage ; - l'élément de masquage déposé au cours de l'étape de masquage est apte à être polymérisé, et en ce que l'élément de masquage est sol id ifié par polymérisation au cours de la phase de sol id ification de l'étape de masquage ;a ground phase idification of the masking element; the masking element deposited during the masking step is capable of being polymerized, and in that the masking element is soiled by polymerization during the soil phase; masking;
- l'élément de masquage déposé au cours de l'étape de masquage est un élément du type d'une résine, d'une peinture ou d'une encre ;the masking element deposited during the masking step is an element of the type of a resin, a paint or an ink;
- l'élément de masquage qui est déposé au cours de l'étape de masquage est déposé sur la face à traiter du support métall ique par un procédé de dépôt électrochim ique ; - l'étape de dépôt du métal précieux comporte successivement :the masking element which is deposited during the masking step is deposited on the face to be treated of the metallic support by an electrochemical deposition process; the step of depositing the precious metal successively comprises:
-- une seconde phase d'activation du support métall ique, -- une phase de dépôt du métal précieux sur lad ite zone de dépôt, et -- une troisième phase de rinçage du support métall ique ;a second phase of activation of the metallic support, a phase of deposition of the precious metal on the deposition zone, and a third phase of rinsing of the metal support;
- la phase de dépôt du métal précieux sur la zone de dépôt découverte de la face à traiter du support métall ique est réal isée par galvanoplastie ; - le procédé comporte une étape d'él imination de l'élément de masquage restant à la su ite de l'étape d'ablation , lad ite étape d'él im ination étant réal isée à la suite de l'étape de dépôt du métal précieux ; - le procédé comporte une étape de finition qu i comporte successivement :the deposition phase of the precious metal on the deposition zone discovered on the face to be treated of the metallic support is made by electroplating; the method comprises a step of el imination of the masking element remaining at the end of the ablation step, the said elimination step being carried out following the step of depositing the precious metal; the process comprises a finishing step which comprises successively:
-- une quatrième phase de rinçage du support métall ique, -- une troisième phase d'activation du support métall ique, -- une phase d'étamage du support métallique, -- une cinqu ième phase de rinçage du support métall ique,a fourth phase of rinsing of the metallic support, a third phase of activation of the metallic support, a phase of tinning of the metal support, a fifth phase of rinsing of the metal support,
-- une seconde phase de séchage du support métall ique. L'invention propose aussi un d ispositif pour la mise en œuvre du procédé, caractérisé en ce qu'il comporte :a second phase of drying the metallic support. The invention also proposes a device for implementing the method, characterized in that it comprises:
- un bac contenant une substance aqueuse, dans lequel le support métall ique est apte à être entraîné en déplacement de façon immergée dans lad ite substance aqueuse,a tank containing an aqueous substance, in which the metallic support is able to be immersed in displacement in the said aqueous substance,
- un moyen d'ém ission d'ondes ultrasonores qui est monté mobile, par rapport au support métall ique, sur un élément structurel du dispositif de sorte que le moyen d'émission est apte à occuper au moins une position d'ablation dans laquelle les ondes ultrasonores irradient lad ite portion à enlever de l'élément de masquage,an ultrasonic wave emitting means which is movably mounted, with respect to the metallic support, on a structural element of the device so that the emitting means is able to occupy at least one ablation position in which the ultrasonic waves irradiate the portion to be removed from the masking element,
- des moyens de focalisation desd ites ondes ultrasonores vers un point de convergence de façon à irradier ladite portion à enlever de l'élément de masquage.means for focusing said ultrasonic waves towards a point of convergence so as to irradiate said portion to be removed from the masking element.
Selon une autre caractéristique du d ispositif, le dispositif comporte des moyens motorisés pour l'entraînement en déplacement du moyen d'émission d'ondes ultrasonores vers sa position d'ablation , et en ce que le dispositif comporte des moyens de commande desdits moyens motorisés.According to another feature of the device, the device comprises motorized means for moving the ultrasound wave transmission means to its ablation position, and in that the device comprises means for controlling said motorized means. .
D'autres caractéristiques et avantages de l'invention, ainsi que des détails de conception et de réal isation apparaîtront à la lecture de la description détaillée qu i va su ivre pour la compréhension de laquelle on se reportera aux dessins annexés dans lesquels :Other features and advantages of the invention, as well as design details and real isation will appear on reading the detailed description that will be learned for the understanding of which reference will be made to the accompanying drawings in which:
- la figure 1 est une vue schématique en perspective, qui illustre un tronçon d'une bande métallique de support ; - la figure 2 est une vue schématique en perspective, qui illustre la bande de support de la figure 1 après une étape de masquage de la bande de support par un élément de masquage, selon un procédé de dépôt sélectif conformément à l'invention ;- Figure 1 is a schematic perspective view, which illustrates a section of a metal support strip; FIG. 2 is a schematic perspective view, which illustrates the support strip of FIG. 1 after a step of masking the support strip by a masking element, according to a selective deposition process according to the invention;
- la figure 3 est une vue schématique en perspective, qui illustre la bande de support de la figure 2 après une étape d'ablation d'une portion à enlever de l'élément de masquage, selon le procédé ;FIG. 3 is a schematic perspective view, which illustrates the support strip of FIG. 2 after a step of ablation of a portion to be removed from the masking element, according to the method;
- la figure 4 est une vue schématique en perspective, qui illustre la bande de support de la figure 3 après une étape de dépôt d'un métal précieux sur des zones de dépôt de la bande de support découvertes au cours de l'étape d'ablation, selon le procédé ;FIG. 4 is a schematic perspective view, which illustrates the support strip of FIG. 3 after a step of deposition of a precious metal on deposition zones of the support strip discovered during the step of ablation, according to the method;
- la figure 5 est une vue schématique en perspective, qui illustre la bande de support de la figure 4 après une étape d'élimination de l'élément de masquage restant après l'étape de dépôt du métal précieux, selon le procédé ;FIG. 5 is a schematic perspective view, which illustrates the support band of FIG. 4 after a step of removing the masking element remaining after the step of depositing the precious metal, according to the method;
- la figure 6 est une vue schématique qui illustre un dispositif à ultrasons pour la mise en œuvre de l'étape d'ablation, comportant un moyen d'émission d'ondes ultrasonores dont un transducteur est monté mobile selon 3 degrés de liberté ;FIG. 6 is a diagrammatic view illustrating an ultrasound device for implementing the ablation step, comprising means for emitting ultrasonic waves, a transducer of which is mounted mobile in 3 degrees of freedom;
- la figure 7 est une vue schématique, qui illustre le moyen d'émission d'ondes ultrasonores de la figure 6 dans une position d'ablation de l'élément de masquage de la bande de support au cours de l'étape d'ablation ; - la figure 8 est une vue schématique de détail , qui illustre l'irradiation de l'élément de masquage par le moyen d'émission d'ondes ultrasonores au cours de l'étape d'ablation. On utilisera à titre non limitatif les orientations longitudinale, verticale et transversale selon le trièdre L, V, T représenté aux figures.FIG. 7 is a schematic view illustrating the ultrasonic wave emitting means of FIG. 6 in an ablation position of the masking element of the support strip during the ablation step; ; FIG. 8 is a schematic detail view, which illustrates the irradiation of the masking element by the ultrasonic wave emission means during the ablation step. The longitudinal, vertical and transverse orientations according to the L, V, T trihedron represented in the figures will be used without limitation.
On adoptera aussi, et les termes supérieur et inférieur en référence à la direction verticale du repère V, L, T.We will also adopt, and the terms upper and lower with reference to the vertical direction of the reference V, L, T.
De plus, les éléments identiques, similaires ou analogues de l'invention seront désignés par les mêmes chiffres de référence.In addition, identical, similar or analogous elements of the invention will be designated by the same reference numerals.
On a représenté à la figure 1 un tronçon d'une bande métallique de support 10 dont une face à traiter 12 supérieure est destinée à être traitée par un procédé de dépôt sélectif d'un métal précieux.FIG. 1 shows a section of a metal support strip 10, one of which is to be treated by a process for the selective deposition of a precious metal.
La figure 1 ne représente ici qu'un tronçon de la bande métallique de support 10. En effet, la bande de support 10, dans sa totalité, s'étend selon une direction longitudinale, de sorte que la bande de support 10 est apte à être entraînée en déplacement au cours du procédé, par exemple entre des rouleaux rotatifs (non représentés), sur une ligne de traitement de surface (non représentée).FIG. 1 represents here only a portion of the metal support strip 10. Indeed, the support strip 10, in its entirety, extends in a longitudinal direction, so that the support strip 10 is able to be moved during the process, for example between rotating rollers (not shown), on a surface treatment line (not shown).
La bande de support 10 est constituée par une série d'éléments 14 à traiter qui sont raccordés entre eux pour former la bande de support 10.The support strip 10 is constituted by a series of elements 14 to be treated which are connected together to form the support strip 10.
Les éléments 14 à traiter sont par exemple des éléments de contact électrique, dont deux sont représentés à la figure 1 , qui sont par exemple réalisés par découpage et par déformation de la bande de support 10.The elements 14 to be treated are, for example, electrical contact elements, two of which are shown in FIG. 1, which are for example made by cutting and deformation of the support strip 10.
Le procédé de dépôt sélectif comporte une étape préliminaire de préparation de la face à traiter 12 du tronçon de la bande de support 10.The selective deposition process comprises a preliminary step of preparing the face to be treated 12 of the section of the support strip 10.
L'étape préliminaire de préparation comporte une phase de dégraissage de la face à traiter 12 de la bande de support 10, par exemple par immersion du tronçon de la bande de support 1 0 dans un bain de trichloréthylène.The preliminary preparation step comprises a degreasing phase of the face to be treated 12 of the support strip 10, by example by immersion of the section of the support strip 1 0 in a trichlorethylene bath.
De plus, l'étape prél im inaire de préparation comporte une phase de décapage de la face à traiter 1 2 du tronçon de la bande de support 1 0, qu i est réal isée à la suite de la phase de dégraissage.In addition, the preliminary preparation step comprises a stripping phase of the face to be treated 1 2 of the section of the support strip 1 0, which is carried out following the degreasing phase.
Aussi, l'étape prélim inaire de préparation comporte une première phase de rinçage, qui est su ivie par une première phase d'activation . La première phase d'activation consiste à activer la face à traiter 1 2 du tronçon de la bande de support 1 0, par exemple par immersion du support 1 0 dans un bain d'acide sulfurique.Also, the preliminary preparation step comprises a first rinsing phase, which is su ivie by a first activation phase. The first activation phase consists in activating the face to be treated 1 2 of the section of the support band 1 0, for example by immersing the support 1 0 in a sulfuric acid bath.
La première phase d'activation est suivie par une phase de n ickelage de l'étape prél iminaire. La phase de nickelage consiste à déposer une couche de protection en n ickel sur la face à traiter 1 2 du tronçon de la bande de support 1 0, afin de protéger la face à traiter 12 contre la corrosion et afin d'éviter la m igration et la diffusion des composés métall iques de la face à traiter 1 2. L'étape prél iminaire de préparation du procédé comporte une deuxième phase de rinçage de la face à traiter 1 2 du tronçon de la bande de support 1 0, qu i est réal isée à la suite de la phase de n ickelage.The first activation phase is followed by a nickel phase of the preliminary step. The nickel-plating phase consists in depositing a nickel-protective layer on the face to be treated 1 2 of the section of the support strip 1 0, in order to protect the face to be treated 12 against corrosion and to prevent migration. and the diffusion of the metallic compounds of the face to be treated 1 2. The preliminary stage of preparation of the method comprises a second phase of rinsing the face to be treated 1 2 of the section of the support strip 1 0, that i is Realized after the nickeling phase.
Enfin, l'étape prél im inaire du procédé comporte une première phase de séchage de la face à traiter 1 2 du tronçon de la bande de support 10.Finally, the preliminary step of the method comprises a first phase of drying the face to be treated 1 2 of the section of the support strip 10.
L'étape prél iminaire de préparation du procédé est suivie d'une étape de masquage.The preliminary step of preparing the process is followed by a masking step.
L'étape de masquage comporte une phase de dépôt qu i consiste à déposer un élément de masquage 1 6, ou de revêtement, sur la face à traiter 1 2 du tronçon de la bande de support 10, afin de couvrir la face à traiter 12, tel que le représente la figure 2. L'élément de masquage 16 est ici une résine 16 qui est déposée sur la face à traiter 12 par dépôt électrochimique, de sorte que la résine 16 recouvre la face à traiter 12 du tronçon de la bande de support 10 de façon homogène et avec une épaisseur constante.The masking step comprises a deposition phase that consists of depositing a masking element 1 6, or coating, on the face to be treated 1 2 of the section of the support strip 10, in order to cover the face to be treated 12 as shown in Figure 2. The masking element 16 is here a resin 16 which is deposited on the face to be treated 12 by electrochemical deposition, so that the resin 16 covers the face to be treated 12 of the section of the support strip 10 homogeneously and with a constant thickness.
La résine 16 est ici une résine qui est apte à être polymérisée et qui est constituée à base d'acrylate et d'époxyde.Resin 16 is here a resin which is capable of being polymerized and which is constituted based on acrylate and epoxide.
L'étape de masquage comporte une phase de solidification qui est réalisée à la suite de la phase de dépôt, et qui consiste à solidifier la résine 16 préalablement déposée sur le tronçon de la bande de support 10.The masking step comprises a solidification phase which is carried out following the deposition phase, and which consists in solidifying the resin 16 previously deposited on the section of the support strip 10.
A cet effet, la résine 16 de masquage subit successivement une opération de polymérisation, par exemple en étant passée dans un four, ou par cataphorèse, puis une opération de réticulation, ici en irradiant la résine 16 avec des rayons ultraviolets.For this purpose, the masking resin 16 successively undergoes a polymerization operation, for example by being passed through an oven, or by cataphoresis, and then a crosslinking operation, here by irradiating the resin 16 with ultraviolet rays.
La résine 16, après la phase de solidification, doit répondre à des contraintes mécaniques qui sont liées à l'entraînement de la bande de support 10 au cours du procédé sur la ligne de traitement de surface.The resin 16, after the solidification phase, must respond to mechanical stresses that are related to the driving of the support strip 10 during the process on the surface treatment line.
Ainsi, la résine 16 déposée sur la bande de support 10 doit être résistante notamment à la torsion, à la flexion, à la compression et au cisaillement.Thus, the resin 16 deposited on the support strip 10 must be particularly resistant to torsion, bending, compression and shearing.
De plus, la résine 16 est résistante aux produits qui sont susceptibles d'être utilisés au cours des différentes phases suivantes du procédé, notamment aux phases d'activation, de rinçage et à la phase de dépôt du métal précieux par galvanoplastie qui est décrite dans la suite de la description.In addition, the resin 16 is resistant to the products that may be used during the various subsequent phases of the process, in particular to the activation, rinsing and electroplating phases of the precious metal, which is described in FIG. following the description.
Le procédé de dépôt comporte une étape d'ablation sélective qui est réalisée après l'étape de masquage précédemment décrite.The deposition process comprises a selective ablation step which is performed after the masking step described above.
L'étape d'ablation sélective consiste à irradier avec des ondes ultrasonores 22 une pluralité de portions à enlever 17 (dont deux sont représentées à la figure 2) de la résine 1 6 de masquage précédemment déposée, de façon à enlever par destruction les portions à enlever 1 7, comme le représente la figure 8. Une fois enlevée, chaque portion à enlever 17 de la résineThe selective ablation step consists in irradiating with ultrasonic waves 22 a plurality of portions to be removed 17 (of which two are shown in Figure 2) of the resin 1 6 masking previously deposited, so as to remove by destruction the portions to remove 1 7, as shown in Figure 8. Once removed, each portion to remove 17 of the resin
1 6 de masquage permet de découvrir une zone de dépôt 1 8 correspondante (dont deux sont représentées à la figure 3) de la face à traiter 1 2 du tronçon de la bande de support 10, comme le représente la figure 3. Comme l'illustre les figures 6 à 8, les ondes ultrasonores1 6 masking allows to discover a corresponding deposition area 1 8 (of which two are shown in Figure 3) of the face to be treated 1 2 of the section of the support strip 10, as shown in Figure 3. As the illustrates Figures 6 to 8, ultrasonic waves
22 constituent un faisceau d'ondes ultrasonores 22 de haute intensité qu i se propagent selon un prem ier axe A long itudinal .22 constitute a beam of ultrasonic waves 22 of high intensity that propagate along a first longitudinal axis A long.
Les ondes ultrasonores 22 sont focal isées de façon à converger vers un point de convergence 1 9, de sorte que le faisceau d'ondes ultrasonores 22 est d'une forme sensiblement conique de section décroissante vers la portion à enlever 1 7 de l'élément de masquage 16.The ultrasonic waves 22 are focalized so as to converge towards a convergence point January 9, so that the ultrasonic wave beam 22 is of a substantially conical shape with a decreasing section towards the portion to be removed 1 7 from the element Masking 16.
La bande de support 1 0 est entraînée en déplacement au cours de l'étape d'ablation, selon une d irection globalement orthogonale au premier axe A de propagation des ondes ultrasonores, ici selon une direction long itud inale, par des moyens d'entraînement (non représentés).The support band 10 is driven in displacement during the ablation step, according to a direction which is generally orthogonal to the first axis A of propagation of the ultrasonic waves, here in a long longitudinal direction, by training means. (not shown)
Au cours du déplacement de la bande de support 10, les éléments 14 à traiter qu i constituent la bande de support 1 0 sont agencés tour à tour au droit du faisceau d'ondes ultrasonores 22, de sorte que la portion à enlever 1 7 de chaque élément 14 à traiter est agencée sur le point de convergence 1 9, et de sorte que la portion à enlever 1 7 ainsi visée est détruite par les ondes ultrasonores 22. Ce type d'ondes ultrasonores 22 est connu sous la terminolog ie anglaise « H igh Intensity Focused Ultrasound » .During the displacement of the support strip 10, the elements 14 to be treated which constitute the support strip 1 0 are arranged successively in line with the ultrasonic wave beam 22, so that the portion to be removed 1 7 each element 14 to be treated is arranged on the point of convergence 1 9, and so that the portion to be removed 1 7 so targeted is destroyed by the ultrasonic waves 22. This type of ultrasonic wave 22 is known in the English terminology " High Intensity Focused Ultrasound.
L'étape d'ablation par ultrasons du procédé de dépôt sélectif est ici réal isée dans un mil ieu aqueux, grâce à quoi le tronçon de la bande de support 10, plus précisément la zone de dépôt 18, ne chauffe peu ou pas lorsqu'elle est irradiée par les ondes ultrasonores 22.The ultrasonic ablation step of the selective deposition process is here carried out in an aqueous medium, whereby the section of the support strip 10, more precisely the deposition zone 18, does little or no heat when it is irradiated by the ultrasonic waves 22.
Le procédé de dépôt comporte une étape de dépôt d'un métal précieux 32, qui est réalisée à la suite de l'étape d'ablation.The deposition process comprises a step of depositing a precious metal 32, which is performed following the ablation step.
L'étape de dépôt comporte une deuxième phase d'activation qui consiste à activer les zones de dépôt 18 de la face à traiter 12 du tronçon de la bande de support 10, par exemple par immersion du support 10 dans un bain d'acide sulfurique.The deposition step comprises a second activation phase which consists in activating the deposition zones 18 of the face to be treated 12 of the section of the support band 10, for example by immersing the support 10 in a sulfuric acid bath. .
L'étape de dépôt comporte une phase de dépôt qui est réalisée à la suite de la deuxième phase d'activation et qui consiste à déposer un métal précieux 32 sur les zones de dépôt 18 de la face à traiter 12 du tronçon de la bande de support 10. Les zones de dépôt 18 correspondent aux zones de dépôt qui sont découvertes à la suite de l'ablation des portions à enlever 17 de la résine 16 de masquage, au cours de l'étape d'ablation .The deposition step comprises a deposition phase which is performed following the second activation phase and which consists in depositing a precious metal 32 on the deposition zones 18 of the face to be treated 12 of the section of the strip of deposition. 10. The deposition zones 18 correspond to the deposition zones which are discovered following the ablation of the portions to be removed 17 from the masking resin 16, during the ablation step.
Le métal précieux 32 est par exemple de l'or, de l'argent, de l'étain mélangé à du plomb, de l'étain pur, ou du nickel.The precious metal 32 is, for example, gold, silver, tin mixed with lead, pure tin, or nickel.
Le métal précieux 32 est ici déposé par galvanoplastie, ce qui permet de déposer une couche adhérente de faible épaisseur du métal précieux 32 uniquement sur les zone de dépôt 18 découvertes, comme on peut le voir à la figure 4. A titre non lim itatif, le métal précieux 32 peut être déposé par des procédés classiques de dépôt du type d it « par jet » , « par spot », « par brossage » ou par tout autre type de procédé de dépôt permettant le dépôt d'une couche du métal précieux 32.The precious metal 32 is deposited electroplating here, which makes it possible to deposit an adherent layer of small thickness of the precious metal 32 only on the deposition zones 18 discovered, as can be seen in FIG. 4. Without limitation, the precious metal 32 can be deposited by conventional methods of depositing the type d it "by jet", "by spot", "by brushing" or by any other type of deposition process for depositing a layer of the precious metal 32.
Enfin, l'étape de dépôt comporte une troisième phase de rinçage du tronçon de la bande de support 10.Finally, the deposition step comprises a third rinsing phase of the section of the support strip 10.
Enfin, le procédé de dépôt sélectif comporte une étape de finition qui est réalisée après l'étape de dépôt. L'étape de finition comporte une troisième phase d'activation de la bande de support 1 0.Finally, the selective deposition process includes a finishing step that is performed after the deposition step. The finishing step comprises a third activation phase of the support band 1 0.
La phase d'activation est suivie d'une phase d'étamage des zones de dépôts 1 8 de la face à traiter 1 2 du tronçon de la bande de support 10, les zones de dépôts 1 8 étant préalablement recouvertes du métal précieux 32.The activation phase is followed by a tinning phase of the zones of deposits 1 8 of the face to be treated 1 2 of the section of the support strip 10, the zones of deposits 1 8 being previously covered with the precious metal 32.
L'étamage est prévu pour la soudure ultérieure d'un composant (non représenté) sur chaque zone de dépôt 1 8 étamée. Enfin , l'étape de finition comporte une quatrième phase de rinçage du tronçon de la bande de support 1 0 qui est suivie par une seconde phase de séchage de la bande de support 1 0.Tinning is provided for the subsequent welding of a component (not shown) to each tinned deposition zone 18. Finally, the finishing step comprises a fourth rinsing phase of the portion of the support strip 1 0 which is followed by a second drying phase of the support strip 1 0.
L'invention concerne aussi un d ispositif 20 pour la mise en œuvre de l'étape d'ablation du procédé, qui est représenté aux figures 6 à 8.The invention also relates to a device 20 for implementing the ablation step of the method, which is shown in FIGS. 6 to 8.
Le dispositif 20 comporte un bac 28 qui est ouvert verticalement vers le haut et qu i contient une substance aqueuse 30, comme de l'eau .The device 20 has a tray 28 which is open vertically upward and contains an aqueous substance 30, such as water.
Le bac 28 comporte une première paroi verticale 26a qui dél imite une première lumière 32a, et une seconde paroi verticale 26b en vis à vis qui dél imite une seconde lum ière 32b.The tray 28 has a first vertical wall 26a which delimits a first light 32a, and a second vertical wall 26b opposite which delimits a second light 32b.
La prem ière lumière 32a et la seconde lumière 32b sont agencées en vis à vis et elles sont chacune de la forme d'une fente transversale. Comme l'illustre la figure 7, le tronçon de la bande de support 1 0 s'étend longitud inalement dans le bac 28, depuis la première lum ière 32a jusqu'à la seconde lumière 32b, de sorte que le tronçon de la bande de support 10 est immergé dans la substance aqueuse 30. La bande de support 10 est apte à être entraînée en déplacement longitudinal à travers le bac 28.The first lumen 32a and the second lumen 32b are arranged opposite and each is in the form of a transverse slot. As illustrated in FIG. 7, the section of the support strip 1 0 extends longitudinally in the tray 28, from the first light 32a to the second light 32b, so that the section of the light strip support 10 is immersed in the aqueous substance 30. The support strip 10 is able to be driven longitudinally through the tray 28.
La substance aqueuse 30 s'écoule de façon continue depu is la prem ière lumière 32a et la seconde lumière 32b, jusqu'à un récipient (non représenté) qui est agencé au dessous du bacThe aqueous substance 30 flows continuously from the first light 32a and the second light 32b, up to a container (not shown) which is arranged below the tray
28.28.
La substance aqueuse 30 qui est contenue dans le récipient est filtrée et réinjectée dans le bac 28 au moyen d'un d ispositif de pompage (non représenté).The aqueous substance which is contained in the container is filtered and re-injected into the tank 28 by means of a pumping device (not shown).
Le dispositif 20 comporte un élément structurel 34 en arc de cercle qu i est courbé vers le haut et qu i est fixé sur le bac 28, de sorte que l'élément structurel 34 s'étend transversalement au dessus du bac 28. De plus, selon la figure 6, l'élément structurel 34 dél im ite une gl issière 36 qui s'étend transversalement en regard de la substance aqueuse 30 du bac 28.The device 20 comprises an arcuate structural element 34 which is curved upwards and is fixed to the tray 28, so that the structural element 34 extends transversely above the tray 28. In addition, according to FIG. 6, the structural element 34 delimits a glissière 36 which extends transversely facing the aqueous substance 30 of the tank 28.
Le d ispositif 20 comporte un transducteur 24 qui constitue un moyen pour l'ém ission des ondes ultrasonores 22 et qui est monté mobile sur l'élément structurel 34.The device 20 comprises a transducer 24 which constitutes a means for the em ission of the ultrasonic waves 22 and which is movably mounted on the structural element 34.
De plus, le transducteur 24 est agencé de sorte qu'il est immergé dans la substance aqueuse 30 du bac 28.In addition, the transducer 24 is arranged so that it is immersed in the aqueous substance 30 of the tank 28.
A cet effet, le transducteur 24 est porté par un chariot 38 qui est monté mobile sur l'élément structurel 34. Le chariot 38 comporte un doigt 40 supérieur d'accrochage dont un premier tronçon supérieur 40a est reçu en coul issement dans la gl issière 36 complémentaire de l'élément structurel 34 et un second tronçon inférieur 40b est rel ié sur une prem ière branche 42a méd iane d'un bras 42 en forme de U . Complémentairement, le d ispositif 20 comporte un premier moyen d'entraînement motorisé (non représenté) qu i permet l'entraînement en coul issement du tronçon supérieur 40a du doigt d'accrochage 40 dans la gl issière 36 associée de l'élément structurel 34. Le doigt d'accrochage 40 s'étend ici selon le premier axe A de propagation des ondes ultrasonores 22, sensiblement orthogonalement à l'élément structurel 34. De plus, le premier tronçon supérieur 40a et le second tronçon inférieur 40b du doigt d'accrochage 40 sont montés coulissants l'un dans l'autre selon le premier axe A, à la manière d'un vérin, de sorte que la longueur axiale du doigt d'accrochage 40 est réglable.For this purpose, the transducer 24 is carried by a carriage 38 which is movably mounted on the structural element 34. The carriage 38 comprises an upper attachment finger 40, a first upper portion 40a of which is received in a sliding direction in the glissier 36 complementary to the structural element 34 and a second lower section 40b is reliied on a first median branch 42a of a U-shaped arm 42. Complementarily, the device 20 comprises a first motorized drive means (not shown) that allows the driving of the upper portion 40a of the hooking finger 40 into the associated link 36 of the structural element 34. The gripping finger 40 extends here along the first propagation axis of the ultrasonic waves 22, substantially orthogonal to the structural element 34. In addition, the first upper portion 40a and the second lower portion 40b of the latching finger 40 are slidably mounted one inside the other along the first axis A, in the manner of a jack, so that the axial length the hooking finger 40 is adjustable.
Complémentairement, le dispositif 20 comporte un deuxième moyen d'entraînement motorisé (non représenté) qui permet l'entraînement en coulissement du premier tronçon supérieur 40a par rapport au second tronçon inférieur 40b du doigt d'accrochage 40, selon le premier axe A.Complementarily, the device 20 comprises a second motorized drive means (not shown) which allows the sliding drive of the first upper portion 40a relative to the second lower portion 40b of the hooking finger 40, along the first axis A.
Le bras 42 en U comporte une deuxième branche 42b et une troisième branche 42c qui s'étendent parallèlement depuis la première branche médiane 42a et qui sont chacune reliées sur le transducteur 24, de sorte que le transducteur 24 est monté pivotant entre la deuxième branche 42b et la troisième branche 42c du bras 42 autour d'un second axe B de pivotement.The U-shaped arm 42 has a second limb 42b and a third limb 42c which extend parallel from the first medial branch 42a and which are each connected to the transducer 24, so that the transducer 24 is pivotally mounted between the second limb 42b and the third leg 42c of the arm 42 about a second pivot axis B.
Le second axe B de pivotement est ici orthogonal au premier axe A de propagation des ondes ultrasonores 22.The second pivot axis B is here orthogonal to the first propagation axis of the ultrasonic waves 22.
Complémentairement, le dispositif 20 comporte un troisième moyen d'entraînement motorisé (non représenté) qui permet l'entraînement en pivotement du transducteur 24 autour du second axe B de pivotement.Complementarily, the device 20 comprises a third motorized drive means (not shown) which allows the transducer 24 to be pivotally driven about the second pivot axis B.
Le premier, le deuxième et le troisième moyen d'entraînement motorisé sont commandés par des premiers moyens de commande (non représentés).The first, second and third motorized drive means are controlled by first control means (not shown).
Ainsi, le premier axe A de propagation des ondes ultrasonores 22 est inclinable par rapport à la face à traiter 12 supérieure de la bande de support 10, par déplacement du doigt d'accrochage 40 dans la glissière 36 de l'élément structurel 34 et par pivotement du transducteur 24 autour du second axe B de pivotement.Thus, the first axis A for propagation of the ultrasonic waves 22 is inclinable with respect to the upper surface 12 of the support strip 10, by moving the latching finger 40 in the slideway 36 of the structural element 34 and by pivoting of the transducer 24 around the second pivot axis B.
Avantageusement, lorsque le premier axe A de propagation des ondes ultrasonores 22 est incliné par rapport à la face à traiter 12 supérieure de la bande de support 1 0, les ondes ultrasonores 22 qui sont réfléch ies par la face à traiter 1 2 n'irradient pas, ou peu, le transducteur 24.Advantageously, when the first axis A of propagation of the ultrasonic waves 22 is inclined relative to the face of 12, the ultrasonic waves 22 which are reflected by the face to be treated 1 2 do not irradiate, or little, the transducer 24.
De plus, la d istance entre le transducteur 24 et la bande de support 10 est réglable par variation de la longueur axiale du doigt d'accrochage 40, de façon à pouvoir agencer avec précision le point de convergence 1 9 des ondes ultrasonores 22 sur la portion à enlever 1 7 de la bande de support 1 0.In addition, the distance between the transducer 24 and the support strip 10 is adjustable by varying the axial length of the gripping finger 40, so as to be able to precisely arrange the point of convergence 19 of the ultrasonic waves 22 on the portion to be removed 1 7 from the support strip 1 0.
Ainsi, le transducteur 24 est apte à occuper une plural ité de positions d'ablation dans chacune desquelles les ondes ultrasonores 22 irrad ient la portion à enlever 1 7 de l'élément de masquage 1 6 de la bande de support 10.Thus, the transducer 24 is able to occupy a plurality of ablation positions in each of which the ultrasonic waves 22 irradiate the portion to be removed 1 7 from the masking element 1 6 of the support band 10.
De plus, le transducteur 24 est apte à balayer la portion à enlever 1 7 de l'élément de masquage 1 6 de la bande de support 1 0.In addition, the transducer 24 is able to scan the portion to be removed 1 7 of the masking element 1 6 of the support band 1 0.
Le transducteur 24 est associé à des seconds moyens de commande (non représentés) du transducteur 24, pour le réglage de la puissance et de la fréquence des ondes ultrasonores 22, et pour le réglage du temps d'irrad iation des portions à enlever 1 7 de la résine 1 6 de masquage par les ondes ultrasonores 22.The transducer 24 is associated with second control means (not shown) of the transducer 24, for adjusting the power and the frequency of the ultrasonic waves 22, and for adjusting the irradiation time of the portions to be removed. of the resin 1 6 masking by the ultrasonic waves 22.
Les ondes ultrasonores 22 sont ém ises par le transducteur 24 de façon puisée, à la manière d'un signal puisé.The ultrasonic waves 22 are emitted by the transducer 24 pulsed in the manner of a pulsed signal.
La pu issance des ondes ultrasonores 22 est ici comprise entre d ix et mille watts, la fréquence est comprise entre un et d ix mégas Hertz et le temps d'irrad iation est compris entre cent microsecondes à quelques m inutes.The puissance of ultrasonic waves 22 is here between d ix and one thousand watts, the frequency is between one and d ix mega Hertz and irradiation time is between one hundred microseconds to a few minutes.
Aussi, la d istance focale entre le point de convergence 1 9 et le transducteur 24 est ici comprise entre d ix et deux cents mill imètres. Enfin , le d ispositif 20 comporte un moyen de focal isationAlso, the focal distance between the point of convergence 1 9 and the transducer 24 is here between d ix and two hundred millimeters. Finally, the device 20 comprises a focalization means
(non représenté) des ondes ultrasonores 22 vers le point de convergence 19. Selon une variante de réalisation du procédé de dépôt, illustrée à la figure 5, le procédé de dépôt comporte une étape supplémentaire d'élimination de l'élément de masquage 16 restant, qui est réalisée à la suite de l'étape de dépôt du métal précieux 32 et avant l'étape de finition .(not shown) ultrasonic waves 22 towards the convergence point 19. According to an alternative embodiment of the deposition process, illustrated in FIG. 5, the deposition process comprises an additional step of removing the remaining masking element 16, which is produced as a result of the metal deposition step. valuable 32 and before the finishing step.
L'étape supplémentaire d'élimination consiste à enlever l'élément de masquage 16 qui n'a pas été enlevé au cours de l'étape d'ablation, comme le représente la figure 5.The further removal step is to remove the masking member 16 that has not been removed during the ablation step, as shown in FIG. 5.
L'étape d'élimination est suivie d'une cinquième phase de rinçage du tronçon de la bande de support 10.The elimination step is followed by a fifth rinsing phase of the section of the support strip 10.
Selon une autre variante de réalisation non représentée, l'élément de masquage 16 se présente sous la forme d'un film adhésif qui est collé sur la face à traiter 12 de la bande de support 10. Selon une autre variante de réalisation, la résine 16 utilisée comme élément de masquage 16 peut être une encre, comme de l'encre polyamide, ou une peinture, comme de la peinture acrylique, ou une résine 16 à base de polyuréthane.According to another variant embodiment not shown, the masking element 16 is in the form of an adhesive film which is bonded to the face to be treated 12 of the support strip 10. According to another embodiment, the resin 16 as a masking element 16 may be an ink, such as polyamide ink, or a paint, such as acrylic paint, or a polyurethane-based resin 16.
Selon cette variante, la polymérisation de la résine 16 au cours de la phase de solidification de l'étape de masquage est réalisée par évaporation d'un solvant qui est contenu dans la résine 16.According to this variant, the polymerization of the resin 16 during the solidification phase of the masking step is carried out by evaporation of a solvent which is contained in the resin 16.
Aussi, la résine 16, quelle soit une peinture, une encre, une résine 16 à base de polyuréthane ou une résine à base d'acrylate et d'époxyde, peut être déposée sur la face à traiter 12 de la bande de support 10 au cours de la phase de dépôt de l'étape de masquage, par exemple par projection en spray, par dépôt électrochimique ou par dépôt sous vide.Also, the resin 16, whether a paint, an ink, a resin 16 based on polyurethane or an acrylate-based epoxy resin, can be deposited on the face to be treated 12 of the support strip 10 to the during the deposition step of the masking step, for example by spray spraying, electrochemical deposition or by vacuum deposition.
De même, la résine 16 peut être déposée sur la face à traiter 12 de la bande de support 10 au cours de la phase de dépôt de l'étape de masquage au moyen d'un pinceau ou d'un rouleau . Similarly, the resin 16 may be deposited on the face to be treated 12 of the support strip 10 during the deposition phase of the masking step by means of a brush or a roller.

Claims

REVENDICATIONS
1 . Procédé de dépôt sélectif d'un métal (32) sur un support métallique (10), procédé qui comporte successivement :1. A method of selectively depositing a metal (32) on a metal support (10), which process comprises successively:
- une étape de masquage qui consiste à déposer un élément de masquage (16) sur une face à traiter (12) du support métallique (10) afin de couvrir ladite face à traiter (12),a masking step consisting in depositing a masking element (16) on a face to be treated (12) of the metal support (10) in order to cover said face to be treated (12),
- une étape d'ablation sélective d'au moins une portion à enlever (17) de l'élément de masquage (16) préalablement déposé, qui consiste à découvrir une zone de dépôt (18) correspondante de ladite face à traiter (12) du support métallique (10),a step of selective ablation of at least one portion to be removed (17) from the previously deposited masking element (16), which consists in discovering a corresponding deposition zone (18) of said face to be treated (12) the metal support (10),
- une étape de dépôt du métal (32) sur ladite zone de dépôt (18) préalablement découverte, caractérisé en ce que l'étape d'ablation sélective consiste à irradier par des ondes ultrasonores (22) ladite portion à enlevera deposition step of the metal (32) on said previously discovered deposition zone (18), characterized in that the selective ablation step consists of irradiating with ultrasonic waves (22) said portion to be removed;
(17) de l'élément de masquage (16), de façon à détruire ladite portion à enlever (17) pour découvrir ladite zone de dépôt (18) correspondante.(17) of the masking element (16), so as to destroy said portion to be removed (17) to discover said corresponding deposition area (18).
2. Procédé selon la revendication 1 , caractérisé en ce que les ondes ultrasonores (22) constituent un faisceau d'ondes ultrasonores qui sont focalisées de sorte que les ondes ultrasonores (22) convergent vers la portion à enlever (17) de l'élément de masquage (16), afin de détruire ladite portion à enlever (17). 2. Method according to claim 1, characterized in that the ultrasonic waves (22) constitute a beam of ultrasonic waves which are focused so that the ultrasonic waves (22) converge towards the portion to be removed (17) of the element masking device (16) to destroy said portion to be removed (17).
3. Procédé selon l'une quelconque des revendications précédentes, caractérisé en ce que l'étape d'ablation par ultrasons est réalisée dans un mil ieu aqueux (30).3. Method according to any of the preceding claims, characterized in that the ultrasonic ablation step is performed in an aqueous medium (30).
4. Procédé selon l'une quelconque des revendications précédentes, caractérisé en ce qu'il comporte une étape prél iminaire qu i est réal isée avant l'étape de masquage et qu i comporte successivement :4. Method according to any one of the preceding claims, characterized in that it comprises a preliminary step that i realizes before the masking step and that i comprises successively:
- une phase de dégraissage du support métallique (10),a degreasing phase of the metal support (10),
- une phase de décapage du support métallique (10), - une première phase de rinçage du support métall ique (10),a stripping phase of the metal support (10), a first phase of rinsing the metallic support (10),
- une première phase d'activation du support métallique (10), - une phase de n ickelage du support métall ique (1 0),a first phase of activation of the metal support (10), a phase of nickel-plating of the metal support (1 0),
- une deuxième phase de rinçage du support métall ique (10),a second rinsing phase of the metallic support (10),
- une première phase de séchage du support métall ique (10). a first phase of drying the metallic support (10).
5. Procédé selon la revend ication 1 , caractérisé en ce que l'étape de masquage comporte successivement :5. Method according to claim 1, characterized in that the masking step comprises successively:
- une phase de dépôt de l'élément de masquage (1 6) sur la face à traiter (1 2) du support métall ique (10),a deposition phase of the masking element (1 6) on the face to be treated (1 2) of the metal support (10),
- une phase de sol idification de l'élément de masquage (16).- A ground phase idification of the masking element (16).
6. Procédé selon la revendication 5, caractérisé en ce que l'élément de masquage (1 6) déposé au cours de l'étape de masquage est apte à être polymérisé, et en ce que l'élément de masquage (1 6) est sol id ifié par polymérisation au cours de la phase de sol id ification de l'étape de masquage.6. Method according to claim 5, characterized in that the masking element (1 6) deposited during the masking step is capable of being polymerized, and in that the masking element (1 6) is soil idi fi ed by polymerization during the soil phase id ification of the masking step.
7. Procédé selon l'une quelconque des revend ications 1 , 5 et 6, caractérisé en ce que l'élément de masquage (1 6) déposé au cours de l'étape de masquage est un élément du type d'une résine, d'une peinture ou d'une encre. 7. Method according to any one of claims 1, 5 and 6, characterized in that the masking element (1 6) deposited during the masking step is a member of the type of a resin, d 'a painting or an ink.
8. Procédé selon l'une quelconque des revendications 1 , 5,8. Process according to any one of claims 1, 5,
6 et 7 caractérisé en ce que l'élément de masquage (16) qu i est déposé au cours de l'étape de masquage est déposé sur la face à traiter (1 2) du support métall ique (1 0) par un procédé de dépôt électroch imique. 6 and 7 characterized in that the masking element (16) which is deposited during the masking step is deposited on the face to be treated (1 2) of the metal support (1 0) by a method of electrochemical deposit.
9. Procédé selon la revend ication 1 , caractérisé en ce que l'étape de dépôt du métal (32) comporte successivement :9. Process according to claim 1, characterized in that the step of depositing the metal (32) comprises successively:
- une seconde phase d'activation du support métall ique (10), - une phase de dépôt du métal (32) sur ladite zone de dépôt (18), eta second phase of activation of the metallic support (10), a metal deposition phase (32) on said deposition zone (18), and
- une troisième phase de rinçage du support métallique (10). a third phase of rinsing the metal support (10).
10. Procédé selon la revendication précédente, caractérisé en ce que ladite phase de dépôt du métal (32) sur la zone de dépôt (18) découverte de la face à traiter (17) du support métallique (10) est réalisée par galvanoplastie.10. Method according to the preceding claim, characterized in that said metal deposition phase (32) on the deposition area (18) discovered from the face to be treated (17) of the metal support (10) is made by electroplating.
1 1 . Procédé selon la revendication 1 , caractérisé en ce qu'il comporte une étape d'élimination de l'élément de masquage1 1. Process according to Claim 1, characterized in that it comprises a step of eliminating the masking element
(16) restant à la suite de l'étape d'ablation, ladite étape d'élimination étant réalisée à la suite de l'étape de dépôt du métal (32).(16) remaining following the ablation step, said removing step being performed following the metal deposition step (32).
12. Procédé selon la revendication 1 , caractérisé en ce qu'il comporte une étape de finition qui comporte successivement :12. Method according to claim 1, characterized in that it comprises a finishing step which comprises successively:
- une quatrième phase de rinçage du support métallique (10),a fourth phase of rinsing the metal support (10),
- une troisième phase d'activation du support métallique ( 1 0 ) ,a third phase of activation of the metal support (1 0),
- une phase d'étamage du support métallique (10),a tinning phase of the metal support (10),
- une cinquième phase de rinçage du support métallique (10),a fifth phase of rinsing the metal support (10),
- une seconde phase de séchage du support métallique ( 1 0 ) .a second phase of drying the metal support (1 0).
13. Dispositif (20) pour la mise en œuvre du procédé selon l'une quelconque des revendications précédentes, caractérisé en ce qu'il comporte :13. Device (20) for implementing the method according to any one of the preceding claims, characterized in that it comprises:
- un bac (28) contenant une substance aqueuse (30), dans lequel le support métallique (10) est apte à être entraîné en déplacement de façon immergée dans ladite substance aqueuse (30), - un moyen d'émission (24) d'ondes ultrasonores (22) qu i est monté mobile, par rapport au support métall ique (10), sur un élément structurel du dispositif (20) de sorte que le moyen d'ém ission (24) est apte à occuper au moins une position d'ablation dans laquelle les ondes ultrasonores (22) irrad ient lad ite portion à enlever (17) de l'élément de masquage (16),a tank (28) containing an aqueous substance (30), in which the metal support (10) is able to be immersed in displacement in said aqueous substance (30), an ultrasonic wave transmission means (22) which is movably mounted relative to the metal support (10) on a structural element of the device (20) so that the emitting means (24) is adapted to occupy at least one ablation position in which the ultrasonic waves (22) irradiate said portion to be removed (17) from the masking element (16),
- des moyens de focal isation desdites ondes ultrasonores (22) vers un point de convergence (1 9) de façon à irradier lad ite portion à enlever (1 7) de l'élément de masquage (1 6). means for focusing said ultrasonic waves (22) towards a point of convergence (1 9) so as to irradiate said portion to be removed (1 7) from the masking element (1 6).
14. Dispositif (20) selon la revend ication précédente, caractérisé en ce qu'il comporte des moyens motorisés pour l'entraînement en déplacement du moyen d'émission (24) d'ondes ultrasonores (22) vers sa position d'ablation, et en ce que le d ispositif (20) comporte des moyens de commande desdits moyens motorisés. 14. Device (20) according to the preceding revendication ication, characterized in that it comprises motorized means for moving the transmission means (24) of ultrasonic waves (22) to its ablation position, and in that the device (20) comprises means for controlling said motorized means.
EP09761646A 2008-06-12 2009-06-03 Method for selectively depositing a precious metal on a substrate by the ultrasound ablation of a mask element, and device thereof Active EP2283171B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0853892A FR2932497B1 (en) 2008-06-12 2008-06-12 METHOD FOR THE SELECTIVE DEPOSITION OF A PRECIOUS METAL ON A SUPPORT BY ULTRASONIC ABLATION OF A MASKING MEMBER AND ITS DEVICE
PCT/EP2009/056803 WO2009150083A1 (en) 2008-06-12 2009-06-03 Method for selectively depositing a precious metal on a substrate by the ultrasound ablation of a mask element, and device thereof

Publications (2)

Publication Number Publication Date
EP2283171A1 true EP2283171A1 (en) 2011-02-16
EP2283171B1 EP2283171B1 (en) 2012-03-14

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EP09761646A Active EP2283171B1 (en) 2008-06-12 2009-06-03 Method for selectively depositing a precious metal on a substrate by the ultrasound ablation of a mask element, and device thereof

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EP (1) EP2283171B1 (en)
AT (1) ATE549435T1 (en)
FR (1) FR2932497B1 (en)
WO (1) WO2009150083A1 (en)

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US20210164111A1 (en) * 2019-12-03 2021-06-03 Samsung Electronics Co., Ltd. Surface pattern forming method for aluminium product

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GB1041769A (en) * 1965-05-19 1966-09-07 Ibm A method of applying fluid to selected areas of a workpiece and a mask for use therein
GB1521130A (en) * 1975-12-02 1978-08-16 Standard Telephones Cables Ltd Selective electro-plating etching or electro-machining
US4626323A (en) * 1985-04-10 1986-12-02 Siemens Aktiengesellschaft Method for the manufacture of a printing element for an ink droplet printing unit
US5156936A (en) * 1989-09-19 1992-10-20 U.S. Philips Corporation Contact device for the photocathode of photoelectric tubes and manufacturing method
US7091132B2 (en) * 2003-07-24 2006-08-15 Applied Materials, Inc. Ultrasonic assisted etch using corrosive liquids

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
US20210164111A1 (en) * 2019-12-03 2021-06-03 Samsung Electronics Co., Ltd. Surface pattern forming method for aluminium product
US11913122B2 (en) * 2019-12-03 2024-02-27 Samsung Electronics Co., Ltd. Surface pattern forming method for aluminium product

Also Published As

Publication number Publication date
WO2009150083A1 (en) 2009-12-17
FR2932497A1 (en) 2009-12-18
ATE549435T1 (en) 2012-03-15
FR2932497B1 (en) 2011-03-11
EP2283171B1 (en) 2012-03-14

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