EP2283171B1 - Method for selectively depositing a precious metal on a substrate by the ultrasound ablation of a mask element, and device thereof - Google Patents

Method for selectively depositing a precious metal on a substrate by the ultrasound ablation of a mask element, and device thereof Download PDF

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Publication number
EP2283171B1
EP2283171B1 EP09761646A EP09761646A EP2283171B1 EP 2283171 B1 EP2283171 B1 EP 2283171B1 EP 09761646 A EP09761646 A EP 09761646A EP 09761646 A EP09761646 A EP 09761646A EP 2283171 B1 EP2283171 B1 EP 2283171B1
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EP
European Patent Office
Prior art keywords
metal support
substep
masking
metal
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
EP09761646A
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German (de)
French (fr)
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EP2283171A1 (en
Inventor
Sylvain Rochon
Jean-Yves Hihn
Loïc HALLEZ
Francis Touyeras
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Universite de Franche-Comte
C&K Components SAS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Universite de Franche-Comte
C&K Components SAS
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Publication of EP2283171A1 publication Critical patent/EP2283171A1/en
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Publication of EP2283171B1 publication Critical patent/EP2283171B1/en
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1605—Process or apparatus coating on selected surface areas by masking
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/42—Coating with noble metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating

Definitions

  • the invention relates to a method for selectively depositing a precious metal on a metal support, such as a metal support strip, by ultrasonic ablation of a masking element.
  • the invention also relates to a device for implementing a step of the deposition process.
  • Numerous processes are known for depositing a precious metal on a metal support, or substrate, including processes for depositing a precious metal by electrochemical reaction, such as electroplating.
  • the document FR 2 333 876 describes an electrolytic deposition process in which the workpiece is subjected to ultrasonic radiation.
  • Electroplating is a process for applying to at least one deposition area of a surface to be treated with a metal support, a metal deposit dissolved in a liquid by means of a continuous or pulsed electric current.
  • the deposit zone thus covered by the precious metal is for example intended to constitute an electrical contact zone.
  • the metal support is for example of the form of a metal support strip which is constituted by a series of components connected to each other.
  • Such a strip shape enables the continuous metal support strip to be driven continuously, for example between rotating rollers on a surface treatment line, so as to allow the continuous deposit of the precious metal on the support strip.
  • This deposit of precious metal continuously can be achieved in particular by depositing methods known as “jet”, “spot” or “brushing”.
  • This type of selective deposition comprises a masking step which consists in depositing a masking element on the face to be treated of the metal support, the masking step being followed by a selective ablation step.
  • the selective ablation step consists in removing at least a portion of the previously deposited masking element in order to discover at least one deposition zone of the face to be treated of the metal support.
  • the selective deposition process comprises a step of depositing the precious metal on the previously discovered deposit zone of the face to be treated of the metal support.
  • this precious metal deposition step is performed by electroplating.
  • Electroplating here makes it possible to deposit an adherent layer of small thickness of the precious metal, only on the deposit area discovered.
  • EP-B1-1.409.772 discloses a method of selective deposition of a precious metal on a metal support, the step of selective ablation of the masking element is performed by means of a laser.
  • the portion to be removed from the masking element is subjected to a laser beam which destroys the portion to be removed, in order to discover a deposition zone of the face to be treated of the metal support.
  • the deposit area thus discovered is covered by the precious metal during a depositing step of the precious metal.
  • the ablation of the portion to be removed from the masking element by a laser has the disadvantage of heating the metal support, more precisely the deposition area of the support, which may deteriorate the metal support and oxidize it.
  • the invention proposes a selective deposition process, the ablation step of which does not damage the metal support.
  • the invention proposes a method of the type described above, characterized in that the selective ablation step consists in irradiating with ultrasonic waves said portion to be removed from the masking element, so as to destroy said portion to be removed to discover said corresponding deposition area.
  • the device comprises motorized means for moving the ultrasonic wave transmission means to its ablation position, and in that the device comprises means for controlling said motorized means.
  • FIG. 1 a section of a metal support strip 10, one side to be treated 12 upper is intended to be treated by a method of selective deposition of a precious metal.
  • the figure 1 here only represents a portion of the metal support strip 10.
  • the support strip 10 in its entirety, extends in a longitudinal direction, so that the support strip 10 is able to be driven in displacement during the process, for example between rotary rollers (not shown ), on a surface treatment line (not shown).
  • the support strip 10 is constituted by a series of elements 14 to be treated which are connected together to form the support strip 10.
  • the elements 14 to be treated are, for example, electrical contact elements, two of which are represented in FIG. figure 1 , which are for example made by cutting and deformation of the support strip 10.
  • the selective deposition process comprises a preliminary step of preparing the face to be treated 12 of the section of the support strip 10.
  • the preliminary preparation step comprises a degreasing phase of the face to be treated 12 of the support strip 10, by example by immersion of the section of the support strip 10 in a trichlorethylene bath.
  • the preliminary preparation step comprises a stripping phase of the face to be treated 12 of the section of the support strip 10, which is performed following the degreasing phase.
  • the preliminary preparation stage comprises a first rinsing phase, which is followed by a first activation phase.
  • the first activation phase consists in activating the face to be treated 12 of the section of the support strip 10, for example by immersing the support 10 in a sulfuric acid bath.
  • the first activation phase is followed by a nickel phase of the preliminary stage.
  • the nickel-plating phase consists in depositing a nickel-protective layer on the face to be treated 12 of the section of the support strip 10, in order to protect the face to be treated against corrosion and in order to avoid the migration and diffusion of the metal compounds of the face to be treated 12.
  • the preliminary stage of preparation of the method comprises a second rinsing phase of the face to be treated 12 of the section of the support strip 10, which is carried out following the nickel plating phase.
  • the preliminary stage of the process comprises a first drying phase of the face to be treated 12 of the section of the support strip 10.
  • the preliminary stage of preparation of the process is followed by a masking step.
  • the masking step comprises a deposition phase which consists in depositing a masking element 16, or coating, on the face to be treated 12 of the section of the support strip 10, in order to cover the face to be treated 12, such as represents it the figure 2 .
  • the masking element 16 is here a resin 16 which is deposited on the face to be treated 12 by electrochemical deposition, so that the resin 16 covers the face to be treated 12 of the section of the support strip 10 homogeneously and with a constant thickness.
  • Resin 16 is here a resin which is capable of being polymerized and which is constituted based on acrylate and epoxide.
  • the masking step comprises a solidification phase which is carried out following the deposition phase, and which consists in solidifying the resin 16 previously deposited on the section of the support strip 10.
  • the masking resin 16 successively undergoes a polymerization operation, for example by being passed through an oven, or by cataphoresis, and then a crosslinking operation, here by irradiating the resin 16 with ultraviolet rays.
  • the resin 16, after the solidification phase, must respond to mechanical stresses that are related to the driving of the support strip 10 during the process on the surface treatment line.
  • the resin 16 deposited on the support strip 10 must be particularly resistant to torsion, bending, compression and shearing.
  • the resin 16 is resistant to the products that may be used during the various subsequent phases of the process, in particular to the activation, rinsing and electroplating phases of the precious metal, which is described in FIG. following the description.
  • the deposition process comprises a selective ablation step which is performed after the masking step described above.
  • the selective ablation step consists in irradiating with ultrasonic waves 22 a plurality of portions to be removed 17 (of which two are represented at the figure 2 ) masking resin 16 previously deposited, so as to remove by destruction the portions to be removed 17, as shown in FIG. figure 8 .
  • each portion to be removed 17 from the masking resin 16 makes it possible to discover a corresponding deposition zone 18 (two of which are shown in FIG. figure 3 ) of the face to be treated 12 of the section of the support strip 10, as shown in FIG. figure 3 .
  • ultrasonic waves 22 constitute a beam of ultrasonic waves 22 of high intensity which propagate along a first axis A longitudinal.
  • the ultrasonic waves 22 are focused so as to converge towards a point of convergence 19, so that the ultrasonic wave beam 22 is of a substantially conical shape of decreasing section towards the portion to be removed 17 of the masking element 16 .
  • the support band 10 is driven in displacement during the ablation step, in a direction generally orthogonal to the first axis A propagation of the ultrasonic waves, here in a longitudinal direction, by drive means (not shown) .
  • the elements 14 to be treated which constitute the support strip 10 are arranged successively in line with the ultrasonic wave beam 22, so that the portion to be removed 17 from each element 14 to be treated is arranged on the point of convergence 19, and so that the portion to be removed 17 thus targeted is destroyed by the ultrasonic waves 22.
  • the ultrasonic ablation step of the selective deposition process is here carried out in an aqueous medium, thanks to which the section of the support strip 10, more precisely the deposition zone 18, does little or no heat when it is irradiated by the ultrasonic waves 22.
  • the deposition process comprises a step of depositing a precious metal 32, which is performed following the ablation step.
  • the deposition step comprises a second activation phase which consists in activating the deposition zones 18 of the face to be treated 12 of the section of the support band 10, for example by immersing the support 10 in a sulfuric acid bath. .
  • the deposition step comprises a deposition phase which is performed following the second activation phase and which consists in depositing a precious metal 32 on the deposition zones 18 of the face to be treated 12 of the section of the strip of deposition. support 10.
  • the deposition zones 18 correspond to the deposition zones which are discovered following the ablation of the portions to be removed 17 from the masking resin 16, during the ablation step.
  • the precious metal 32 is, for example, gold, silver, tin mixed with lead, pure tin, or nickel.
  • the precious metal 32 is here deposited by electroplating, which makes it possible to deposit an adherent layer of small thickness of the precious metal 32 only on the deposition zones 18 discovered, as can be seen in FIG. figure 4 .
  • the precious metal 32 may be deposited by conventional "jet", “spot” or “brushing” type deposition methods or by any other type of deposition process allowing the deposition of a deposit. layer of precious metal 32.
  • the deposition step comprises a third rinsing phase of the section of the support strip 10.
  • the selective deposition process includes a finishing step that is performed after the deposition step.
  • the finishing step comprises a third activation phase of the support strip 10.
  • the activation phase is followed by a tinning phase of the deposition zones 18 of the face to be treated 12 of the section of the support strip 10, the deposition zones 18 being previously covered with the precious metal 32.
  • Tinning is provided for the subsequent soldering of a component (not shown) to each tinned deposition zone 18.
  • finishing step comprises a fourth rinsing phase of the section of the support strip 10 which is followed by a second drying phase of the support strip 10.
  • the invention also relates to a device 20 for implementing the ablation step of the method, which is shown in FIGS. Figures 6 to 8 .
  • the device 20 comprises a tray 28 which is open vertically upwards and which contains an aqueous substance 30, such as water.
  • the tray 28 has a first vertical wall 26a which defines a first lumen 32a, and a second vertical wall 26b opposite which delimits a second lumen 32b.
  • the first light 32a and the second light 32b are arranged opposite each other and are each in the form of a transverse slot.
  • the section of the support strip 10 extends longitudinally in the tray 28, from the first lumen 32a to the second lumen 32b, so that the portion of the support strip 10 is immersed in the aqueous substance 30.
  • the support strip 10 is capable of being driven longitudinally through the tray 28.
  • the aqueous substance 30 flows continuously from the first lumen 32a and the second lumen 32b until a container (not shown) which is arranged below the tray 28.
  • the aqueous substance contained in the container is filtered and re-injected into the tray 28 by means of a pumping device (not shown).
  • the device 20 comprises an arched structural element 34 which is bent upwards and which is fixed on the tray 28, so that the structural element 34 extends transversely above the tray 28.
  • the structural element 34 delimits a slideway 36 which extends transversely facing the aqueous substance 30 of the tank 28.
  • the device 20 comprises a transducer 24 which constitutes a means for the emission of the ultrasonic waves 22 and which is movably mounted on the structural element 34.
  • the transducer 24 is arranged so that it is immersed in the aqueous substance 30 of the tank 28.
  • the transducer 24 is carried by a carriage 38 which is movably mounted on the structural element 34.
  • the carriage 38 comprises an upper hooking finger 40 of which a first upper section 40a is slidably received in the slide 36 complementary to the structural element 34 and a second lower section 40b is connected to a first median branch 42a of an arm 42 U-shaped.
  • the device 20 comprises a first motorized drive means (not shown) which allows the upper section 40a of the catching finger 40 to be slidably driven into the associated slideway 36 of the structural element 34.
  • the gripping finger 40 extends here along the first propagation axis of the ultrasonic waves 22, substantially orthogonal to the structural element 34.
  • first upper portion 40a and the second lower portion 40b of the latching finger 40 are slidably mounted one inside the other along the first axis A, in the manner of a jack, so that the axial length the hooking finger 40 is adjustable.
  • the device 20 comprises a second motorized drive means (not shown) which allows the sliding drive of the first upper portion 40a relative to the second lower portion 40b of the hooking finger 40, along the first axis A.
  • the U-shaped arm 42 has a second limb 42b and a third limb 42c which extend parallel from the first medial branch 42a and which are each connected to the transducer 24, so that the transducer 24 is pivotally mounted between the second limb 42b and the third leg 42c of the arm 42 about a second pivot axis B.
  • the second pivot axis B is here orthogonal to the first propagation axis of the ultrasonic waves 22.
  • the device 20 comprises a third motorized drive means (not shown) which allows the transducer 24 to be pivotally driven about the second pivot axis B.
  • the first, second and third motorized drive means are controlled by first control means (not shown).
  • the first axis A for propagation of the ultrasonic waves 22 is inclinable with respect to the upper surface 12 of the support strip 10, by moving the latching finger 40 in the slideway 36 of the structural element 34 and by pivoting of the transducer 24 around the second pivot axis B.
  • the ultrasonic waves 22 which are reflected by the face to be treated 12 do not irradiate, or little, the transducer 24.
  • the distance between the transducer 24 and the support band 10 is adjustable by varying the axial length of the gripping finger 40, so as to be able to precisely arrange the point of convergence 19 of the ultrasonic waves 22 on the portion to remove 17 from the support strip 10.
  • the transducer 24 is able to occupy a plurality of ablation positions in each of which the ultrasonic waves 22 radiate the portion to be removed 17 from the masking element 16 of the support band 10.
  • the transducer 24 is able to scan the portion to be removed 17 from the masking element 16 of the support band 10.
  • the transducer 24 is associated with second control means (not shown) of the transducer 24, for adjusting the power and frequency of the ultrasonic waves 22, and for adjusting the irradiation time of the portions to be removed 17 of the masking resin 16 by ultrasonic waves 22.
  • the ultrasonic waves 22 are emitted by the transducer 24 in a pulsed manner, in the manner of a pulsed signal.
  • the power of the ultrasonic waves 22 is here between ten and one thousand watts, the frequency is between one and ten megahertz and the irradiation time is between one hundred microseconds to a few minutes.
  • the focal length between the point of convergence 19 and the transducer 24 is here between ten and two hundred millimeters.
  • the device 20 comprises a means of focusing (not shown) ultrasonic waves 22 towards the point of convergence 19.
  • the deposition process comprises an additional step of removing the remaining masking element 16, which is carried out following the deposition step of the precious metal 32 and before the finishing step.
  • the further removal step is to remove the masking member 16 that has not been removed during the ablation step, as depicted in FIG. figure 5 .
  • the elimination step is followed by a fifth rinsing phase of the section of the support strip 10.
  • the masking element 16 is in the form of an adhesive film which is bonded to the face to be treated 12 of the support strip 10.
  • the resin 16 used as a masking element 16 may be an ink, such as polyamide ink, or a paint, such as acrylic paint, or a resin 16 based on polyurethane.
  • the polymerization of the resin 16 during the solidification phase of the masking step is carried out by evaporation of a solvent which is contained in the resin 16.
  • the resin 16, whether a paint, an ink, a resin 16 based on polyurethane or an acrylate-based epoxy resin, can be deposited on the face to be treated 12 of the support strip 10 to the during the deposition step of the masking step, for example by spray spraying, electrochemical deposition or by vacuum deposition.
  • the resin 16 may be deposited on the face to be treated 12 of the support strip 10 during the deposition phase of the masking step by means of a brush or a roller.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention relates to a method for selectively depositing a precious metal (32) on a metal substrate (10), the method sequentially comprising: a masking step, consisting of depositing a mask element (16) on one treated surface (12) of the metal substrate (10); a selective ablation step, for the selective ablation of at least one removed portion (17) of the pre-deposited mask element (16) to expose at least one deposition area (18) of said treated surface (12) of the metal substrate (10); a deposition step, for depositing the precious metal (32) on said pre-exposed deposition area (18); and characterized in that the selective ablation step involves the ultrasound wave (22) irradiation of said removed portion (17) of the mask element (16) to destroy said removed portion (17). The invention also relates to an ultrasound device (20) for implementing the selective ablation step.

Description

L'invention concerne un procédé de dépôt sélectif d'un métal précieux sur un support métallique, comme une bande métallique de support, par ablation ultrasonore d'un élément de masquage.The invention relates to a method for selectively depositing a precious metal on a metal support, such as a metal support strip, by ultrasonic ablation of a masking element.

L'invention concerne aussi un dispositif pour la mise en oeuvre d'une étape du procédé de dépôt.The invention also relates to a device for implementing a step of the deposition process.

L'invention concerne plus particulièrement un procédé de dépôt sélectif d'un métal précieux sur un support métallique, procédé qui comporte successivement :

  • une étape de masquage qui consiste à déposer un élément de masquage sur une face à traiter du support métallique afin de couvrir ladite face à traiter,
  • une étape d'ablation sélective d'au moins une portion à enlever de l'élément de masquage préalablement déposé, qui consiste à découvrir une zone de dépôt correspondante de ladite face à traiter du support métallique,
  • une étape de dépôt du métal précieux sur ladite zone de dépôt préalablement découverte.
The invention relates more particularly to a process for selectively depositing a precious metal on a metal support, which process comprises successively:
  • a masking step which consists in depositing a masking element on a face to be treated of the metal support in order to cover said face to be treated,
  • a step of selective ablation of at least a portion to be removed from the previously deposited masking element, which consists in discovering a corresponding deposition zone of said face to be treated of the metal support,
  • a step of depositing the precious metal on said deposit area previously discovered.

On connaît de nombreux procédés de dépôt d'un métal précieux sur un support métallique, ou substrat, notamment des procédés de dépôt d'un métal précieux par réaction électrochimique, comme la galvanoplastie.Numerous processes are known for depositing a precious metal on a metal support, or substrate, including processes for depositing a precious metal by electrochemical reaction, such as electroplating.

Le document FR 2 333 876 décrit un procédé de dépôt électrolytique selon lequel la pièce à traiter est soumise à un rayonnement d'ultrasons.The document FR 2 333 876 describes an electrolytic deposition process in which the workpiece is subjected to ultrasonic radiation.

La galvanoplastie est un procédé permettant d'appliquer sur au moins une zone de dépôt d'une face à traiter d'un support métallique, un dépôt métallique en dissolution dans un liquide au moyen d'un courant électrique continu ou pulsé.Electroplating is a process for applying to at least one deposition area of a surface to be treated with a metal support, a metal deposit dissolved in a liquid by means of a continuous or pulsed electric current.

La zone de dépôt ainsi recouverte par le métal précieux est par exemple destinée à constituer une zone de contact électrique.The deposit zone thus covered by the precious metal is for example intended to constitute an electrical contact zone.

Le support métallique est par exemple de la forme d'une bande métallique de support qui est constituée par une série de composants raccordés les uns aux autres.The metal support is for example of the form of a metal support strip which is constituted by a series of components connected to each other.

Une telle forme en bande permet l'entraînement de la bande de support métallique en continu, par exemple entre des rouleaux rotatifs sur une ligne de traitement de surface, de manière à permettre le dépôt en continu du métal précieux sur la bande de support.Such a strip shape enables the continuous metal support strip to be driven continuously, for example between rotating rollers on a surface treatment line, so as to allow the continuous deposit of the precious metal on the support strip.

Ce dépôt de métal précieux en continu peut être réalisé notamment par des procédés de dépôt dit « par jet », « par spot » ou « par brossage ».This deposit of precious metal continuously can be achieved in particular by depositing methods known as "jet", "spot" or "brushing".

On connaît aussi un procédé de dépôt sélectif d'un métal précieux sur un support métallique, qui consiste à déposer le métal précieux de façon sélective sur au moins une zone de dépôt prédéterminée d'une face à traiter du support métallique, de façon à économiser le métal précieux.Also known is a method of selectively depositing a precious metal on a metal support, which consists in depositing the precious metal selectively on at least one predetermined deposition zone of a face to be treated of the metal support, so as to save the precious metal.

Ce type de dépôt sélectif comporte une étape de masquage qui consiste à déposer un élément de masquage sur la face à traiter du support métallique, l'étape de masquage étant suivie par une étape d'ablation sélective.This type of selective deposition comprises a masking step which consists in depositing a masking element on the face to be treated of the metal support, the masking step being followed by a selective ablation step.

L'étape d'ablation sélective consiste à enlever au moins une portion de l'élément de masquage préalablement déposé, afin de découvrir au moins une zone de dépôt de la face à traiter du support métallique.The selective ablation step consists in removing at least a portion of the previously deposited masking element in order to discover at least one deposition zone of the face to be treated of the metal support.

Enfin, le procédé de dépôt sélectif comporte une étape de dépôt du métal précieux sur la zone de dépôt préalablement découverte de la face à traiter du support métallique.Finally, the selective deposition process comprises a step of depositing the precious metal on the previously discovered deposit zone of the face to be treated of the metal support.

Selon l'art antérieur, cette étape de dépôt du métal précieux est réalisée par galvanoplastie.According to the prior art, this precious metal deposition step is performed by electroplating.

La galvanoplastie permet ici de déposer une couche adhérente de faible épaisseur du métal précieux, uniquement sur la zone de dépôt découverte.Electroplating here makes it possible to deposit an adherent layer of small thickness of the precious metal, only on the deposit area discovered.

Le document EP-B1-1.409.772 décrit un procédé de dépôt sélectif d'un métal précieux sur un support métallique, dont l'étape d'ablation sélective de l'élément de masquage est réalisée au moyen d'un laser.The document EP-B1-1.409.772 discloses a method of selective deposition of a precious metal on a metal support, the step of selective ablation of the masking element is performed by means of a laser.

La portion à enlever de l'élément de masquage est soumise à un faisceau de rayons laser qui détruit la portion à enlever, afin de découvrir une zone de dépôt de la face à traiter du support métallique.The portion to be removed from the masking element is subjected to a laser beam which destroys the portion to be removed, in order to discover a deposition zone of the face to be treated of the metal support.

Ensuite, la zone de dépôt ainsi découverte est recouverte par le métal précieux au cours d'une étape de dépôt du métal précieux.Then, the deposit area thus discovered is covered by the precious metal during a depositing step of the precious metal.

L'ablation de la portion à enlever de l'élément de masquage par un laser présente l'inconvénient de chauffer le support métallique, plus précisément la zone de dépôt du support, ce qui risque de détériorer le support métallique et de l'oxyder.The ablation of the portion to be removed from the masking element by a laser has the disadvantage of heating the metal support, more precisely the deposition area of the support, which may deteriorate the metal support and oxidize it.

Pour remédier notamment à cet inconvénient, l'invention propose un procédé de dépôt sélectif dont l'étape d'ablation permet de ne pas détériorer le support métallique.In particular, to overcome this drawback, the invention proposes a selective deposition process, the ablation step of which does not damage the metal support.

Dans ce but, l'invention propose un procédé du type décrit précédemment, caractérisé en ce que l'étape d'ablation sélective consiste à irradier par des ondes ultrasonores ladite portion à enlever de l'élément de masquage, de façon à détruire ladite portion à enlever pour découvrir ladite zone de dépôt correspondante.For this purpose, the invention proposes a method of the type described above, characterized in that the selective ablation step consists in irradiating with ultrasonic waves said portion to be removed from the masking element, so as to destroy said portion to be removed to discover said corresponding deposition area.

Selon d'autres caractéristiques de l'invention :

  • les ondes ultrasonores constituent un faisceau d'ondes ultrasonores qui sont focalisées de sorte que les ondes ultrasonores convergent vers la portion à enlever de l'élément de masquage, afin de détruire ladite portion à enlever ;
  • l'étape d'ablation par ultrasons est réalisée dans un milieu aqueux ;
  • le procédé comporte une étape préliminaire qui est réalisée avant l'étape de masquage et qui comporte successivement :
    • -- une phase de dégraissage du support métallique,
    • -- une phase de décapage du support métallique,
    • -- une première phase de rinçage du support métallique,
    • -- une première phase d'activation du support métallique,
    • -- une phase de nickelage du support métallique,
    • -- une deuxième phase de rinçage du support métallique,
    • -- une première phase de séchage du support métallique ;
    • -- l'étape de masquage comporte successivement :
    • -- une phase de dépôt de l'élément de masquage sur la face à traiter du support métallique,
    • -- une phase de solidification de l'élément de masquage ;
  • l'élément de masquage déposé au cours de l'étape de masquage est apte à être polymérisé, et en ce que l'élément de masquage est solidifié par polymérisation au cours de la phase de solidification de l'étape de masquage ;
  • l'élément de masquage déposé au cours de l'étape de masquage est un élément du type d'une résine, d'une peinture ou d'une encre ;
  • l'élément de masquage qui est déposé au cours de l'étape de masquage est déposé sur la face à traiter du support métallique par un procédé de dépôt électrochimique ;
  • l'étape de dépôt du métal précieux comporte successivement :
    • -- une seconde phase d'activation du support métallique,
    • -- une phase de dépôt du métal précieux sur ladite zone de dépôt, et
    • -- une troisième phase de rinçage du support métallique ;
  • la phase de dépôt du métal précieux sur la zone de dépôt découverte de la face à traiter du support métallique est réalisée par galvanoplastie ;
  • le procédé comporte une étape d'élimination de l'élément de masquage restant à la suite de l'étape d'ablation, ladite étape d'élimination étant réalisée à la suite de l'étape de dépôt du métal précieux ;
  • le procédé comporte une étape de finition qui comporte successivement :
    • -- une quatrième phase de rinçage du support métallique,
    • -- une troisième phase d'activation du support métallique,
    • -- une phase d'étamage du support métallique,
    • -- une cinquième phase de rinçage du support métallique,
    • -- une seconde phase de séchage du support métallique.
According to other features of the invention:
  • the ultrasonic waves constitute a beam of ultrasonic waves which are focused so that the ultrasonic waves converge towards the portion to be removed from the masking element, in order to destroy said portion to be removed;
  • the ultrasonic ablation step is performed in an aqueous medium;
  • the method comprises a preliminary step which is performed before the masking step and which successively comprises:
    • a degreasing phase of the metallic support,
    • a stripping phase of the metal support,
    • a first phase of rinsing the metal support,
    • a first phase of activation of the metallic support,
    • a phase of nickel-plating of the metal support,
    • a second phase of rinsing the metallic support,
    • a first phase of drying the metal support;
    • the masking step comprises successively:
    • a deposition phase of the masking element on the face to be treated of the metal support,
    • a phase of solidification of the masking element;
  • the masking element deposited during the masking step is capable of being polymerized, and in that the masking element is solidified by polymerization during the solidification phase of the masking step;
  • the masking element deposited during the masking step is an element of the type of a resin, a paint or an ink;
  • the masking element which is deposited during the masking step is deposited on the face to be treated of the metal support by an electrochemical deposition process;
  • the step of depositing the precious metal successively comprises:
    • a second phase of activation of the metallic support,
    • a phase of deposition of the precious metal on said deposit zone, and
    • a third phase of rinsing the metallic support;
  • the deposition phase of the precious metal on the deposition area discovered of the face to be treated of the metal support is carried out by electroplating;
  • the method comprises a step of removing the remaining masking element following the ablation step, said removing step being carried out following the step of depositing the precious metal;
  • the method comprises a finishing step which successively comprises:
    • a fourth phase of rinsing the metal support,
    • a third phase of activation of the metallic support,
    • a tinning phase of the metal support,
    • a fifth phase of rinsing the metallic support,
    • a second phase of drying the metal support.

L'invention propose aussi un dispositif pour la mise en oeuvre du procédé, caractérisé en ce qu'il comporte :

  • un bac contenant une substance aqueuse, dans lequel le support métallique est apte à être entraîné en déplacement de façon immergée dans ladite substance aqueuse,
  • un moyen d'émission d'ondes ultrasonores qui est monté mobile, par rapport au support métallique, sur un élément structurel du dispositif de sorte que le moyen d'émission est apte à occuper au moins une position d'ablation dans laquelle les ondes ultrasonores irradient ladite portion à enlever de l'élément de masquage,
  • des moyens de focalisation desdites ondes ultrasonores vers un point de convergence de façon à irradier ladite portion à enlever de l'élément de masquage.
The invention also proposes a device for carrying out the method, characterized in that it comprises:
  • a tank containing an aqueous substance, in which the metal support is adapted to be immersed in displacement in said aqueous substance,
  • an ultrasonic wave emitting means which is movably mounted, relative to the metal support, on a structural element of the device so that the emitting means is adapted to occupy at least one ablation position in which the ultrasonic waves irradiate said portion to be removed from the masking element,
  • means for focusing said ultrasonic waves towards a point of convergence so as to irradiate said portion to be removed from the masking element.

Selon une autre caractéristique du dispositif, le dispositif comporte des moyens motorisés pour l'entraînement en déplacement du moyen d'émission d'ondes ultrasonores vers sa position d'ablation, et en ce que le dispositif comporte des moyens de commande desdits moyens motorisés.According to another characteristic of the device, the device comprises motorized means for moving the ultrasonic wave transmission means to its ablation position, and in that the device comprises means for controlling said motorized means.

D'autres caractéristiques et avantages de l'invention, ainsi que des détails de conception et de réalisation apparaîtront à la lecture de la description détaillée qui va suivre pour la compréhension de laquelle on se reportera aux dessins annexés dans lesquels :

  • la figure 1 est une vue schématique en perspective, qui illustre un tronçon d'une bande métallique de support ;
  • la figure 2 est une vue schématique en perspective, qui illustre la bande de support de la figure 1 après une étape de masquage de la bande de support par un élément de masquage, selon un procédé de dépôt sélectif conformément à l'invention ;
  • la figure 3 est une vue schématique en perspective, qui illustre la bande de support de la figure 2 après une étape d'ablation d'une portion à enlever de l'élément de masquage, selon le procédé ;
  • la figure 4 est une vue schématique en perspective, qui illustre la bande de support de la figure 3 après une étape de dépôt d'un métal précieux sur des zones de dépôt de la bande de support découvertes au cours de l'étape d'ablation, selon le procédé ;
  • la figure 5 est une vue schématique en perspective, qui illustre la bande de support de la figure 4 après une étape d'élimination de l'élément de masquage restant après l'étape de dépôt du métal précieux, selon le procédé ;
  • la figure 6 est une vue schématique qui illustre un dispositif à ultrasons pour la mise en oeuvre de l'étape d'ablation, comportant un moyen d'émission d'ondes ultrasonores dont un transducteur est monté mobile selon 3 degrés de liberté ;
  • la figure 7 est une vue schématique, qui illustre le moyen d'émission d'ondes ultrasonores de la figure 6 dans une position d'ablation de l'élément de masquage de la bande de support au cours de l'étape d'ablation ;
  • la figure 8 est une vue schématique de détail, qui illustre l'irradiation de l'élément de masquage par le moyen d'émission d'ondes ultrasonores au cours de l'étape d'ablation.
Other features and advantages of the invention, as well as design details and realization will appear on reading the detailed description that follows for the understanding of which reference will be made to the accompanying drawings in which:
  • the figure 1 is a schematic perspective view illustrating a section of a metal support strip;
  • the figure 2 is a schematic perspective view, which illustrates the support band of the figure 1 after a step of masking the support strip by a masking element, according to a selective deposition process according to the invention;
  • the figure 3 is a schematic perspective view, which illustrates the support band of the figure 2 after a step of ablating a portion to be removed from the masking element, according to the method;
  • the figure 4 is a schematic perspective view, which illustrates the support band of the figure 3 after a step of depositing a precious metal on deposition zones of the support strip discovered during the ablation step, according to the method;
  • the figure 5 is a schematic perspective view, which illustrates the support band of the figure 4 after a step of removing the masking element remaining after the step of depositing the precious metal, according to the method;
  • the figure 6 is a schematic view illustrating an ultrasound device for carrying out the ablation step, comprising means for transmitting ultrasonic waves, a transducer is mounted to move in 3 degrees of freedom;
  • the figure 7 is a schematic view, which illustrates the means of transmitting ultrasonic waves of the figure 6 in an ablation position of the masking member of the support strip during the ablation step;
  • the figure 8 is a schematic detail view, which illustrates the irradiation of the masking element by the ultrasonic wave emission means during the ablation step.

On utilisera à titre non limitatif les orientations longitudinale, verticale et transversale selon le trièdre L, V, T représenté aux figures.The longitudinal, vertical and transverse orientations according to the L, V, T trihedron represented in the figures will be used without limitation.

On adoptera aussi, et les termes supérieur et inférieur en référence à la direction verticale du repère V, L, T.We will also adopt, and the terms upper and lower with reference to the vertical direction of the reference V, L, T.

De plus, les éléments identiques, similaires ou analogues de l'invention seront désignés par les mêmes chiffres de référence.In addition, identical, similar or analogous elements of the invention will be designated by the same reference numerals.

On a représenté à la figure 1 un tronçon d'une bande métallique de support 10 dont une face à traiter 12 supérieure est destinée à être traitée par un procédé de dépôt sélectif d'un métal précieux.We have shown figure 1 a section of a metal support strip 10, one side to be treated 12 upper is intended to be treated by a method of selective deposition of a precious metal.

La figure 1 ne représente ici qu'un tronçon de la bande métallique de support 10.The figure 1 here only represents a portion of the metal support strip 10.

En effet, la bande de support 10, dans sa totalité, s'étend selon une direction longitudinale, de sorte que la bande de support 10 est apte à être entraînée en déplacement au cours du procédé, par exemple entre des rouleaux rotatifs (non représentés), sur une ligne de traitement de surface (non représentée).Indeed, the support strip 10, in its entirety, extends in a longitudinal direction, so that the support strip 10 is able to be driven in displacement during the process, for example between rotary rollers (not shown ), on a surface treatment line (not shown).

La bande de support 10 est constituée par une série d'éléments 14 à traiter qui sont raccordés entre eux pour former la bande de support 10.The support strip 10 is constituted by a series of elements 14 to be treated which are connected together to form the support strip 10.

Les éléments 14 à traiter sont par exemple des éléments de contact électrique, dont deux sont représentés à la figure 1, qui sont par exemple réalisés par découpage et par déformation de la bande de support 10.The elements 14 to be treated are, for example, electrical contact elements, two of which are represented in FIG. figure 1 , which are for example made by cutting and deformation of the support strip 10.

Le procédé de dépôt sélectif comporte une étape préliminaire de préparation de la face à traiter 12 du tronçon de la bande de support 10.The selective deposition process comprises a preliminary step of preparing the face to be treated 12 of the section of the support strip 10.

L'étape préliminaire de préparation comporte une phase de dégraissage de la face à traiter 12 de la bande de support 10, par exemple par immersion du tronçon de la bande de support 10 dans un bain de trichloréthylène.The preliminary preparation step comprises a degreasing phase of the face to be treated 12 of the support strip 10, by example by immersion of the section of the support strip 10 in a trichlorethylene bath.

De plus, l'étape préliminaire de préparation comporte une phase de décapage de la face à traiter 12 du tronçon de la bande de support 10, qui est réalisée à la suite de la phase de dégraissage.In addition, the preliminary preparation step comprises a stripping phase of the face to be treated 12 of the section of the support strip 10, which is performed following the degreasing phase.

Aussi, l'étape préliminaire de préparation comporte une première phase de rinçage, qui est suivie par une première phase d'activation.Also, the preliminary preparation stage comprises a first rinsing phase, which is followed by a first activation phase.

La première phase d'activation consiste à activer la face à traiter 12 du tronçon de la bande de support 10, par exemple par immersion du support 10 dans un bain d'acide sulfurique.The first activation phase consists in activating the face to be treated 12 of the section of the support strip 10, for example by immersing the support 10 in a sulfuric acid bath.

La première phase d'activation est suivie par une phase de nickelage de l'étape préliminaire.The first activation phase is followed by a nickel phase of the preliminary stage.

La phase de nickelage consiste à déposer une couche de protection en nickel sur la face à traiter 12 du tronçon de la bande de support 10, afin de protéger la face à traiter 12 contre la corrosion et afin d'éviter la migration et la diffusion des composés métalliques de la face à traiter 12.The nickel-plating phase consists in depositing a nickel-protective layer on the face to be treated 12 of the section of the support strip 10, in order to protect the face to be treated against corrosion and in order to avoid the migration and diffusion of the metal compounds of the face to be treated 12.

L'étape préliminaire de préparation du procédé comporte une deuxième phase de rinçage de la face à traiter 12 du tronçon de la bande de support 10, qui est réalisée à la suite de la phase de nickelage.The preliminary stage of preparation of the method comprises a second rinsing phase of the face to be treated 12 of the section of the support strip 10, which is carried out following the nickel plating phase.

Enfin, l'étape préliminaire du procédé comporte une première phase de séchage de la face à traiter 12 du tronçon de la bande de support 10.Finally, the preliminary stage of the process comprises a first drying phase of the face to be treated 12 of the section of the support strip 10.

L'étape préliminaire de préparation du procédé est suivie d'une étape de masquage.The preliminary stage of preparation of the process is followed by a masking step.

L'étape de masquage comporte une phase de dépôt qui consiste à déposer un élément de masquage 16, ou de revêtement, sur la face à traiter 12 du tronçon de la bande de support 10, afin de couvrir la face à traiter 12, tel que le représente la figure 2.The masking step comprises a deposition phase which consists in depositing a masking element 16, or coating, on the face to be treated 12 of the section of the support strip 10, in order to cover the face to be treated 12, such as represents it the figure 2 .

L'élément de masquage 16 est ici une résine 16 qui est déposée sur la face à traiter 12 par dépôt électrochimique, de sorte que la résine 16 recouvre la face à traiter 12 du tronçon de la bande de support 10 de façon homogène et avec une épaisseur constante.The masking element 16 is here a resin 16 which is deposited on the face to be treated 12 by electrochemical deposition, so that the resin 16 covers the face to be treated 12 of the section of the support strip 10 homogeneously and with a constant thickness.

La résine 16 est ici une résine qui est apte à être polymérisée et qui est constituée à base d'acrylate et d'époxyde.Resin 16 is here a resin which is capable of being polymerized and which is constituted based on acrylate and epoxide.

L'étape de masquage comporte une phase de solidification qui est réalisée à la suite de la phase de dépôt, et qui consiste à solidifier la résine 16 préalablement déposée sur le tronçon de la bande de support 10.The masking step comprises a solidification phase which is carried out following the deposition phase, and which consists in solidifying the resin 16 previously deposited on the section of the support strip 10.

A cet effet, la résine 16 de masquage subit successivement une opération de polymérisation, par exemple en étant passée dans un four, ou par cataphorèse, puis une opération de réticulation, ici en irradiant la résine 16 avec des rayons ultraviolets.For this purpose, the masking resin 16 successively undergoes a polymerization operation, for example by being passed through an oven, or by cataphoresis, and then a crosslinking operation, here by irradiating the resin 16 with ultraviolet rays.

La résine 16, après la phase de solidification, doit répondre à des contraintes mécaniques qui sont liées à l'entraînement de la bande de support 10 au cours du procédé sur la ligne de traitement de surface.The resin 16, after the solidification phase, must respond to mechanical stresses that are related to the driving of the support strip 10 during the process on the surface treatment line.

Ainsi, la résine 16 déposée sur la bande de support 10 doit être résistante notamment à la torsion, à la flexion, à la compression et au cisaillement.Thus, the resin 16 deposited on the support strip 10 must be particularly resistant to torsion, bending, compression and shearing.

De plus, la résine 16 est résistante aux produits qui sont susceptibles d'être utilisés au cours des différentes phases suivantes du procédé, notamment aux phases d'activation, de rinçage et à la phase de dépôt du métal précieux par galvanoplastie qui est décrite dans la suite de la description.In addition, the resin 16 is resistant to the products that may be used during the various subsequent phases of the process, in particular to the activation, rinsing and electroplating phases of the precious metal, which is described in FIG. following the description.

Le procédé de dépôt comporte une étape d'ablation sélective qui est réalisée après l'étape de masquage précédemment décrite.The deposition process comprises a selective ablation step which is performed after the masking step described above.

L'étape d'ablation sélective consiste à irradier avec des ondes ultrasonores 22 une pluralité de portions à enlever 17 (dont deux sont représentées à la figure 2) de la résine 16 de masquage précédemment déposée, de façon à enlever par destruction les portions à enlever 17, comme le représente la figure 8.The selective ablation step consists in irradiating with ultrasonic waves 22 a plurality of portions to be removed 17 (of which two are represented at the figure 2 ) masking resin 16 previously deposited, so as to remove by destruction the portions to be removed 17, as shown in FIG. figure 8 .

Une fois enlevée, chaque portion à enlever 17 de la résine 16 de masquage permet de découvrir une zone de dépôt 18 correspondante (dont deux sont représentées à la figure 3) de la face à traiter 12 du tronçon de la bande de support 10, comme le représente la figure 3.Once removed, each portion to be removed 17 from the masking resin 16 makes it possible to discover a corresponding deposition zone 18 (two of which are shown in FIG. figure 3 ) of the face to be treated 12 of the section of the support strip 10, as shown in FIG. figure 3 .

Comme l'illustre les figures 6 à 8, les ondes ultrasonores 22 constituent un faisceau d'ondes ultrasonores 22 de haute intensité qui se propagent selon un premier axe A longitudinal.As illustrated Figures 6 to 8 , ultrasonic waves 22 constitute a beam of ultrasonic waves 22 of high intensity which propagate along a first axis A longitudinal.

Les ondes ultrasonores 22 sont focalisées de façon à converger vers un point de convergence 19, de sorte que le faisceau d'ondes ultrasonores 22 est d'une forme sensiblement conique de section décroissante vers la portion à enlever 17 de l'élément de masquage 16.The ultrasonic waves 22 are focused so as to converge towards a point of convergence 19, so that the ultrasonic wave beam 22 is of a substantially conical shape of decreasing section towards the portion to be removed 17 of the masking element 16 .

La bande de support 10 est entraînée en déplacement au cours de l'étape d'ablation, selon une direction globalement orthogonale au premier axe A de propagation des ondes ultrasonores, ici selon une direction longitudinale, par des moyens d'entraînement (non représentés).The support band 10 is driven in displacement during the ablation step, in a direction generally orthogonal to the first axis A propagation of the ultrasonic waves, here in a longitudinal direction, by drive means (not shown) .

Au cours du déplacement de la bande de support 10, les éléments 14 à traiter qui constituent la bande de support 10 sont agencés tour à tour au droit du faisceau d'ondes ultrasonores 22, de sorte que la portion à enlever 17 de chaque élément 14 à traiter est agencée sur le point de convergence 19, et de sorte que la portion à enlever 17 ainsi visée est détruite par les ondes ultrasonores 22.During the displacement of the support strip 10, the elements 14 to be treated which constitute the support strip 10 are arranged successively in line with the ultrasonic wave beam 22, so that the portion to be removed 17 from each element 14 to be treated is arranged on the point of convergence 19, and so that the portion to be removed 17 thus targeted is destroyed by the ultrasonic waves 22.

Ce type d'ondes ultrasonores 22 est connu sous la terminologie anglaise « High Intensity Focused Ultrasound ».This type of ultrasonic wave 22 is known in the English terminology "High Intensity Focused Ultrasound".

L'étape d'ablation par ultrasons du procédé de dépôt sélectif est ici réalisée dans un milieu aqueux, grâce à quoi le tronçon de la bande de support 10, plus précisément la zone de dépôt 18, ne chauffe peu ou pas lorsqu'elle est irradiée par les ondes ultrasonores 22.The ultrasonic ablation step of the selective deposition process is here carried out in an aqueous medium, thanks to which the section of the support strip 10, more precisely the deposition zone 18, does little or no heat when it is irradiated by the ultrasonic waves 22.

Le procédé de dépôt comporte une étape de dépôt d'un métal précieux 32, qui est réalisée à la suite de l'étape d'ablation.The deposition process comprises a step of depositing a precious metal 32, which is performed following the ablation step.

L'étape de dépôt comporte une deuxième phase d'activation qui consiste à activer les zones de dépôt 18 de la face à traiter 12 du tronçon de la bande de support 10, par exemple par immersion du support 10 dans un bain d'acide sulfurique.The deposition step comprises a second activation phase which consists in activating the deposition zones 18 of the face to be treated 12 of the section of the support band 10, for example by immersing the support 10 in a sulfuric acid bath. .

L'étape de dépôt comporte une phase de dépôt qui est réalisée à la suite de la deuxième phase d'activation et qui consiste à déposer un métal précieux 32 sur les zones de dépôt 18 de la face à traiter 12 du tronçon de la bande de support 10.The deposition step comprises a deposition phase which is performed following the second activation phase and which consists in depositing a precious metal 32 on the deposition zones 18 of the face to be treated 12 of the section of the strip of deposition. support 10.

Les zones de dépôt 18 correspondent aux zones de dépôt qui sont découvertes à la suite de l'ablation des portions à enlever 17 de la résine 16 de masquage, au cours de l'étape d'ablation.The deposition zones 18 correspond to the deposition zones which are discovered following the ablation of the portions to be removed 17 from the masking resin 16, during the ablation step.

Le métal précieux 32 est par exemple de l'or, de l'argent, de l'étain mélangé à du plomb, de l'étain pur, ou du nickel.The precious metal 32 is, for example, gold, silver, tin mixed with lead, pure tin, or nickel.

Le métal précieux 32 est ici déposé par galvanoplastie, ce qui permet de déposer une couche adhérente de faible épaisseur du métal précieux 32 uniquement sur les zone de dépôt 18 découvertes, comme on peut le voir à la figure 4.The precious metal 32 is here deposited by electroplating, which makes it possible to deposit an adherent layer of small thickness of the precious metal 32 only on the deposition zones 18 discovered, as can be seen in FIG. figure 4 .

A titre non limitatif, le métal précieux 32 peut être déposé par des procédés classiques de dépôt du type dit « par jet », « par spot », « par brossage » ou par tout autre type de procédé de dépôt permettant le dépôt d'une couche du métal précieux 32.By way of non-limiting example, the precious metal 32 may be deposited by conventional "jet", "spot" or "brushing" type deposition methods or by any other type of deposition process allowing the deposition of a deposit. layer of precious metal 32.

Enfin, l'étape de dépôt comporte une troisième phase de rinçage du tronçon de la bande de support 10.Finally, the deposition step comprises a third rinsing phase of the section of the support strip 10.

Enfin, le procédé de dépôt sélectif comporte une étape de finition qui est réalisée après l'étape de dépôt.Finally, the selective deposition process includes a finishing step that is performed after the deposition step.

L'étape de finition comporte une troisième phase d'activation de la bande de support 10.The finishing step comprises a third activation phase of the support strip 10.

La phase d'activation est suivie d'une phase d'étamage des zones de dépôts 18 de la face à traiter 12 du tronçon de la bande de support 10, les zones de dépôts 18 étant préalablement recouvertes du métal précieux 32.The activation phase is followed by a tinning phase of the deposition zones 18 of the face to be treated 12 of the section of the support strip 10, the deposition zones 18 being previously covered with the precious metal 32.

L'étamage est prévu pour la soudure ultérieure d'un composant (non représenté) sur chaque zone de dépôt 18 étamée.Tinning is provided for the subsequent soldering of a component (not shown) to each tinned deposition zone 18.

Enfin, l'étape de finition comporte une quatrième phase de rinçage du tronçon de la bande de support 10 qui est suivie par une seconde phase de séchage de la bande de support 10.Finally, the finishing step comprises a fourth rinsing phase of the section of the support strip 10 which is followed by a second drying phase of the support strip 10.

L'invention concerne aussi un dispositif 20 pour la mise en oeuvre de l'étape d'ablation du procédé, qui est représenté aux figures 6 à 8.The invention also relates to a device 20 for implementing the ablation step of the method, which is shown in FIGS. Figures 6 to 8 .

Le dispositif 20 comporte un bac 28 qui est ouvert verticalement vers le haut et qui contient une substance aqueuse 30, comme de l'eau.The device 20 comprises a tray 28 which is open vertically upwards and which contains an aqueous substance 30, such as water.

Le bac 28 comporte une première paroi verticale 26a qui délimite une première lumière 32a, et une seconde paroi verticale 26b en vis à vis qui délimite une seconde lumière 32b.The tray 28 has a first vertical wall 26a which defines a first lumen 32a, and a second vertical wall 26b opposite which delimits a second lumen 32b.

La première lumière 32a et la seconde lumière 32b sont agencées en vis à vis et elles sont chacune de la forme d'une fente transversale.The first light 32a and the second light 32b are arranged opposite each other and are each in the form of a transverse slot.

Comme l'illustre la figure 7, le tronçon de la bande de support 10 s'étend longitudinalement dans le bac 28, depuis la première lumière 32a jusqu'à la seconde lumière 32b, de sorte que le tronçon de la bande de support 10 est immergé dans la substance aqueuse 30.As illustrated by figure 7 , the section of the support strip 10 extends longitudinally in the tray 28, from the first lumen 32a to the second lumen 32b, so that the portion of the support strip 10 is immersed in the aqueous substance 30.

La bande de support 10 est apte à être entraînée en déplacement longitudinal à travers le bac 28.The support strip 10 is capable of being driven longitudinally through the tray 28.

La substance aqueuse 30 s'écoule de façon continue depuis la première lumière 32a et la seconde lumière 32b, jusqu'à un récipient (non représenté) qui est agencé au dessous du bac 28.The aqueous substance 30 flows continuously from the first lumen 32a and the second lumen 32b until a container (not shown) which is arranged below the tray 28.

La substance aqueuse 30 qui est contenue dans le récipient est filtrée et réinjectée dans le bac 28 au moyen d'un dispositif de pompage (non représenté).The aqueous substance contained in the container is filtered and re-injected into the tray 28 by means of a pumping device (not shown).

Le dispositif 20 comporte un élément structurel 34 en arc de cercle qui est courbé vers le haut et qui est fixé sur le bac 28, de sorte que l'élément structurel 34 s'étend transversalement au dessus du bac 28.The device 20 comprises an arched structural element 34 which is bent upwards and which is fixed on the tray 28, so that the structural element 34 extends transversely above the tray 28.

De plus, selon la figure 6, l'élément structurel 34 délimite une glissière 36 qui s'étend transversalement en regard de la substance aqueuse 30 du bac 28.Moreover, according to the figure 6 , the structural element 34 delimits a slideway 36 which extends transversely facing the aqueous substance 30 of the tank 28.

Le dispositif 20 comporte un transducteur 24 qui constitue un moyen pour l'émission des ondes ultrasonores 22 et qui est monté mobile sur l'élément structurel 34.The device 20 comprises a transducer 24 which constitutes a means for the emission of the ultrasonic waves 22 and which is movably mounted on the structural element 34.

De plus, le transducteur 24 est agencé de sorte qu'il est immergé dans la substance aqueuse 30 du bac 28.In addition, the transducer 24 is arranged so that it is immersed in the aqueous substance 30 of the tank 28.

A cet effet, le transducteur 24 est porté par un chariot 38 qui est monté mobile sur l'élément structurel 34.For this purpose, the transducer 24 is carried by a carriage 38 which is movably mounted on the structural element 34.

Le chariot 38 comporte un doigt 40 supérieur d'accrochage dont un premier tronçon supérieur 40a est reçu en coulissement dans la glissière 36 complémentaire de l'élément structurel 34 et un second tronçon inférieur 40b est relié sur une première branche 42a médiane d'un bras 42 en forme de U.The carriage 38 comprises an upper hooking finger 40 of which a first upper section 40a is slidably received in the slide 36 complementary to the structural element 34 and a second lower section 40b is connected to a first median branch 42a of an arm 42 U-shaped.

Complémentairement, le dispositif 20 comporte un premier moyen d'entraînement motorisé (non représenté) qui permet l'entraînement en coulissement du tronçon supérieur 40a du doigt d'accrochage 40 dans la glissière 36 associée de l'élément structurel 34.Complementarily, the device 20 comprises a first motorized drive means (not shown) which allows the upper section 40a of the catching finger 40 to be slidably driven into the associated slideway 36 of the structural element 34.

Le doigt d'accrochage 40 s'étend ici selon le premier axe A de propagation des ondes ultrasonores 22, sensiblement orthogonalement à l'élément structurel 34.The gripping finger 40 extends here along the first propagation axis of the ultrasonic waves 22, substantially orthogonal to the structural element 34.

De plus, le premier tronçon supérieur 40a et le second tronçon inférieur 40b du doigt d'accrochage 40 sont montés coulissants l'un dans l'autre selon le premier axe A, à la manière d'un vérin, de sorte que la longueur axiale du doigt d'accrochage 40 est réglable.In addition, the first upper portion 40a and the second lower portion 40b of the latching finger 40 are slidably mounted one inside the other along the first axis A, in the manner of a jack, so that the axial length the hooking finger 40 is adjustable.

Complémentairement, le dispositif 20 comporte un deuxième moyen d'entraînement motorisé (non représenté) qui permet l'entraînement en coulissement du premier tronçon supérieur 40a par rapport au second tronçon inférieur 40b du doigt d'accrochage 40, selon le premier axe A.Complementarily, the device 20 comprises a second motorized drive means (not shown) which allows the sliding drive of the first upper portion 40a relative to the second lower portion 40b of the hooking finger 40, along the first axis A.

Le bras 42 en U comporte une deuxième branche 42b et une troisième branche 42c qui s'étendent parallèlement depuis la première branche médiane 42a et qui sont chacune reliées sur le transducteur 24, de sorte que le transducteur 24 est monté pivotant entre la deuxième branche 42b et la troisième branche 42c du bras 42 autour d'un second axe B de pivotement.The U-shaped arm 42 has a second limb 42b and a third limb 42c which extend parallel from the first medial branch 42a and which are each connected to the transducer 24, so that the transducer 24 is pivotally mounted between the second limb 42b and the third leg 42c of the arm 42 about a second pivot axis B.

Le second axe B de pivotement est ici orthogonal au premier axe A de propagation des ondes ultrasonores 22.The second pivot axis B is here orthogonal to the first propagation axis of the ultrasonic waves 22.

Complémentairement, le dispositif 20 comporte un troisième moyen d'entraînement motorisé (non représenté) qui permet l'entraînement en pivotement du transducteur 24 autour du second axe B de pivotement.Complementarily, the device 20 comprises a third motorized drive means (not shown) which allows the transducer 24 to be pivotally driven about the second pivot axis B.

Le premier, le deuxième et le troisième moyen d'entraînement motorisé sont commandés par des premiers moyens de commande (non représentés).The first, second and third motorized drive means are controlled by first control means (not shown).

Ainsi, le premier axe A de propagation des ondes ultrasonores 22 est inclinable par rapport à la face à traiter 12 supérieure de la bande de support 10, par déplacement du doigt d'accrochage 40 dans la glissière 36 de l'élément structurel 34 et par pivotement du transducteur 24 autour du second axe B de pivotement.Thus, the first axis A for propagation of the ultrasonic waves 22 is inclinable with respect to the upper surface 12 of the support strip 10, by moving the latching finger 40 in the slideway 36 of the structural element 34 and by pivoting of the transducer 24 around the second pivot axis B.

Avantageusement, lorsque le premier axe A de propagation des ondes ultrasonores 22 est incliné par rapport à la face à traiter 12 supérieure de la bande de support 10, les ondes ultrasonores 22 qui sont réfléchies par la face à traiter 12 n'irradient pas, ou peu, le transducteur 24.Advantageously, when the first axis A of propagation of the ultrasonic waves 22 is inclined relative to the face of upper 12 of the support band 10, the ultrasonic waves 22 which are reflected by the face to be treated 12 do not irradiate, or little, the transducer 24.

De plus, la distance entre le transducteur 24 et la bande de support 10 est réglable par variation de la longueur axiale du doigt d'accrochage 40, de façon à pouvoir agencer avec précision le point de convergence 19 des ondes ultrasonores 22 sur la portion à enlever 17 de la bande de support 10.In addition, the distance between the transducer 24 and the support band 10 is adjustable by varying the axial length of the gripping finger 40, so as to be able to precisely arrange the point of convergence 19 of the ultrasonic waves 22 on the portion to remove 17 from the support strip 10.

Ainsi, le transducteur 24 est apte à occuper une pluralité de positions d'ablation dans chacune desquelles les ondes ultrasonores 22 irradient la portion à enlever 17 de l'élément de masquage 16 de la bande de support 10.Thus, the transducer 24 is able to occupy a plurality of ablation positions in each of which the ultrasonic waves 22 radiate the portion to be removed 17 from the masking element 16 of the support band 10.

De plus, le transducteur 24 est apte à balayer la portion à enlever 17 de l'élément de masquage 16 de la bande de support 10.In addition, the transducer 24 is able to scan the portion to be removed 17 from the masking element 16 of the support band 10.

Le transducteur 24 est associé à des seconds moyens de commande (non représentés) du transducteur 24, pour le réglage de la puissance et de la fréquence des ondes ultrasonores 22, et pour le réglage du temps d'irradiation des portions à enlever 17 de la résine 16 de masquage par les ondes ultrasonores 22.The transducer 24 is associated with second control means (not shown) of the transducer 24, for adjusting the power and frequency of the ultrasonic waves 22, and for adjusting the irradiation time of the portions to be removed 17 of the masking resin 16 by ultrasonic waves 22.

Les ondes ultrasonores 22 sont émises par le transducteur 24 de façon pulsée, à la manière d'un signal pulsé.The ultrasonic waves 22 are emitted by the transducer 24 in a pulsed manner, in the manner of a pulsed signal.

La puissance des ondes ultrasonores 22 est ici comprise entre dix et mille watts, la fréquence est comprise entre un et dix mégas Hertz et le temps d'irradiation est compris entre cent microsecondes à quelques minutes.The power of the ultrasonic waves 22 is here between ten and one thousand watts, the frequency is between one and ten megahertz and the irradiation time is between one hundred microseconds to a few minutes.

Aussi, la distance focale entre le point de convergence 19 et le transducteur 24 est ici comprise entre dix et deux cents millimètres.Also, the focal length between the point of convergence 19 and the transducer 24 is here between ten and two hundred millimeters.

Enfin, le dispositif 20 comporte un moyen de focalisation (non représenté) des ondes ultrasonores 22 vers le point de convergence 19.Finally, the device 20 comprises a means of focusing (not shown) ultrasonic waves 22 towards the point of convergence 19.

Selon une variante de réalisation du procédé de dépôt, illustrée à la figure 5, le procédé de dépôt comporte une étape supplémentaire d'élimination de l'élément de masquage 16 restant, qui est réalisée à la suite de l'étape de dépôt du métal précieux 32 et avant l'étape de finition.According to an alternative embodiment of the deposition process, illustrated in FIG. figure 5 , the deposition process comprises an additional step of removing the remaining masking element 16, which is carried out following the deposition step of the precious metal 32 and before the finishing step.

L'étape supplémentaire d'élimination consiste à enlever l'élément de masquage 16 qui n'a pas été enlevé au cours de l'étape d'ablation, comme le représente la figure 5.The further removal step is to remove the masking member 16 that has not been removed during the ablation step, as depicted in FIG. figure 5 .

L'étape d'élimination est suivie d'une cinquième phase de rinçage du tronçon de la bande de support 10.The elimination step is followed by a fifth rinsing phase of the section of the support strip 10.

Selon une autre variante de réalisation non représentée, l'élément de masquage 16 se présente sous la forme d'un film adhésif qui est collé sur la face à traiter 12 de la bande de support 10.According to another variant embodiment not shown, the masking element 16 is in the form of an adhesive film which is bonded to the face to be treated 12 of the support strip 10.

Selon une autre variante de réalisation, la résine 16 utilisée comme élément de masquage 16 peut être une encre, comme de l'encre polyamide, ou une peinture, comme de la peinture acrylique, ou une résine 16 à base de polyuréthane.According to another embodiment, the resin 16 used as a masking element 16 may be an ink, such as polyamide ink, or a paint, such as acrylic paint, or a resin 16 based on polyurethane.

Selon cette variante, la polymérisation de la résine 16 au cours de la phase de solidification de l'étape de masquage est réalisée par évaporation d'un solvant qui est contenu dans la résine 16.According to this variant, the polymerization of the resin 16 during the solidification phase of the masking step is carried out by evaporation of a solvent which is contained in the resin 16.

Aussi, la résine 16, quelle soit une peinture, une encre, une résine 16 à base de polyuréthane ou une résine à base d'acrylate et d'époxyde, peut être déposée sur la face à traiter 12 de la bande de support 10 au cours de la phase de dépôt de l'étape de masquage, par exemple par projection en spray, par dépôt électrochimique ou par dépôt sous vide.Also, the resin 16, whether a paint, an ink, a resin 16 based on polyurethane or an acrylate-based epoxy resin, can be deposited on the face to be treated 12 of the support strip 10 to the during the deposition step of the masking step, for example by spray spraying, electrochemical deposition or by vacuum deposition.

De même, la résine 16 peut être déposée sur la face à traiter 12 de la bande de support 10 au cours de la phase de dépôt de l'étape de masquage au moyen d'un pinceau ou d'un rouleau.Similarly, the resin 16 may be deposited on the face to be treated 12 of the support strip 10 during the deposition phase of the masking step by means of a brush or a roller.

Claims (14)

  1. Process for selectively depositing a metal (32) on a metal support (10), which process comprises in succession:
    - a masking step consisting in depositing a masking element (16) on a face (12) to be treated of the metal support (10) so as to cover said face (12) to be treated;
    - a step of selectively ablating at least a portion (17) to be removed from the masking element (16) deposited beforehand, which consists in exposing a corresponding deposition zone (18) of said face (12) to be treated of the metal support (10); and
    - a step of depositing the metal (32) on said corresponding deposition zone (18),
    characterized in that the selective ablation step consists in irradiating said portion (17) to be removed from the masking element (16) with ultrasound (22) so as to destroy said portion (17) to be removed and expose said corresponding deposition zone (18).
  2. Process according to Claim 1, characterized in that the ultrasound (22) forms a beam of ultrasound focused so that the ultrasound (22) converges on the portion (17) to be removed from the masking element (16), in order to destroy said portion (17) to be removed.
  3. Process according to either one of the preceding claims, characterized in that the ultrasound ablation step is carried out in an aqueous medium (30).
  4. Process according to any one of the preceding claims, characterized in that it comprises a preliminary step that is carried out before the masking step and that comprises, in succession:
    - a substep of degreasing the metal support (10);
    - a substep of cleaning the metal support (10);
    - a first substep of rinsing the metal support (10);
    - a first substep of activating the metal support (10);
    - a substep of nickel plating the metal support (10);
    - a second substep of rinsing the metal support (10); and
    - a first substep of drying the metal support (10).
  5. Process according to Claim 1, characterized in that the masking step comprises, in succession:
    - a substep of depositing the masking element (16) on the face (12) to be treated of the metal support (10); and
    - a substep of solidifying the masking element (16).
  6. Process according to Claim 5, characterized in that the masking element (16) deposited in the masking step can be cured, and in that the masking element (16) is cured in the solidifying substep of the masking step.
  7. Process according to any one of Claims 1, 5 and 6, characterized in that the masking element (16) deposited in the masking step is an element of the resin, paint or ink type.
  8. Process according to any one of Claims 1, 5, 6 and 7, characterized in that the masking element (16) that is deposited in the masking step is deposited on the face (12) to be treated of the metal support (10) by an electrochemical deposition process.
  9. Process according to Claim 1, characterized in that the step of depositing the metal (32) comprises, in succession:
    - a second substep of activating the metal support (10);
    - a substep of depositing the metal (32) on said deposition zone (18); and
    - a third substep of rinsing the metal support (10).
  10. Process according to the preceding claim, characterized in that said substep of depositing the metal (32) on the exposed deposition zone (18) of the face (17) to be treated of the metal support (10) is carried out by electroplating.
  11. Process according to Claim 1, characterized in that it comprises a step of removing the masking element (16) remaining after the ablation step, said removal step being carried out after the step of depositing the metal (32).
  12. Process according to Claim 1, characterized in that it comprises a finishing step that comprises, in succession:
    - a fourth substep of rinsing the metal support (10);
    - a third substep of activating the metal support (10);
    - a substep of tinning the metal support (10);
    - a fifth substep of rinsing the metal support (10); and
    - a second substep of drying the metal support (10).
  13. Device (20) for implementing the process according to any one of the preceding claims, characterized in that it comprises:
    - a tray (28) containing an aqueous substance (30) in which the metal support (10) can be moved while submerged in said aqueous substance (30);
    - a means for emitting (24) ultrasound (22) that is moveably mounted relative to the metal support (10), on a structural element of the device (20) so that the emitting means (24) is able to occupy at least one ablation position in which the ultrasound (22) irradiates said portion (17) to be removed from the masking element (16); and
    - means for focusing said ultrasound (22) onto a point (19) of convergence so as to irradiate said portion (17) to be removed from the masking element (16).
  14. Device (20) according to the preceding claim, characterized in that it comprises motorized means for moving the means (24) for emitting ultrasound (22) to its ablation position, and in that the device (20) comprises means for controlling said motorized means.
EP09761646A 2008-06-12 2009-06-03 Method for selectively depositing a precious metal on a substrate by the ultrasound ablation of a mask element, and device thereof Active EP2283171B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0853892A FR2932497B1 (en) 2008-06-12 2008-06-12 METHOD FOR THE SELECTIVE DEPOSITION OF A PRECIOUS METAL ON A SUPPORT BY ULTRASONIC ABLATION OF A MASKING MEMBER AND ITS DEVICE
PCT/EP2009/056803 WO2009150083A1 (en) 2008-06-12 2009-06-03 Method for selectively depositing a precious metal on a substrate by the ultrasound ablation of a mask element, and device thereof

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EP2283171B1 true EP2283171B1 (en) 2012-03-14

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GB1041769A (en) * 1965-05-19 1966-09-07 Ibm A method of applying fluid to selected areas of a workpiece and a mask for use therein
GB1521130A (en) * 1975-12-02 1978-08-16 Standard Telephones Cables Ltd Selective electro-plating etching or electro-machining
US4626323A (en) * 1985-04-10 1986-12-02 Siemens Aktiengesellschaft Method for the manufacture of a printing element for an ink droplet printing unit
US5156936A (en) * 1989-09-19 1992-10-20 U.S. Philips Corporation Contact device for the photocathode of photoelectric tubes and manufacturing method
US7091132B2 (en) * 2003-07-24 2006-08-15 Applied Materials, Inc. Ultrasonic assisted etch using corrosive liquids

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ATE549435T1 (en) 2012-03-15
FR2932497A1 (en) 2009-12-18

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