EP2282360A1 - Optoelektrische Vorrichtung und Verfahren zu deren Herstellung - Google Patents

Optoelektrische Vorrichtung und Verfahren zu deren Herstellung Download PDF

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Publication number
EP2282360A1
EP2282360A1 EP09167416A EP09167416A EP2282360A1 EP 2282360 A1 EP2282360 A1 EP 2282360A1 EP 09167416 A EP09167416 A EP 09167416A EP 09167416 A EP09167416 A EP 09167416A EP 2282360 A1 EP2282360 A1 EP 2282360A1
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EP
European Patent Office
Prior art keywords
barrier layer
main surface
layer structure
metal substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
EP09167416A
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English (en)
French (fr)
Inventor
Chia-Chen Fan
Joanne Sarah Wilson
Antonius Maria Bernardus Van Mol
Stephan Harkema
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Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO
Original Assignee
Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO
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Application filed by Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO filed Critical Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO
Priority to EP09167416A priority Critical patent/EP2282360A1/de
Priority to PCT/NL2010/050498 priority patent/WO2011016724A1/en
Priority to US13/389,058 priority patent/US9333531B2/en
Priority to EP10742606A priority patent/EP2462639A1/de
Priority to KR1020127005961A priority patent/KR20120054620A/ko
Priority to JP2012523578A priority patent/JP5854996B2/ja
Priority to CN201080045279.5A priority patent/CN102576803B/zh
Publication of EP2282360A1 publication Critical patent/EP2282360A1/de
Withdrawn legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B05D5/12—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/153—Constructional details
    • G02F1/1533—Constructional details structural features not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to an opto-electric device.
  • the present invention further relates to a method for manufacturing an opto-electric device.
  • the present invention further relates to a semi-finished product that can be used in the method.
  • the present invention still further relates to a method of manufacturing the semi-finished product.
  • An optoelectric device is a device that provides for an optical effect in response to an electric signal, or that generates an electric signal in response to an optical stimulus.
  • Examples of the first are light emitting diodes, such as organic light emitting diodes and electro chromic devices.
  • Examples of the second are photo voltaic cells.
  • anode e.g. ITO
  • cathode e.g. Ba/Al
  • anode e.g. ITO
  • cathode e.g. Ba/Al
  • anode e.g. ITO
  • cathode e.g. Ba/Al
  • an additional metallization structure of the plastic substrate For reducing the manufacturing costs, such structured metallization coatings will preferably be applied on rolls of plastic foil using an inline roll-to-roll web coating process.
  • WO2007/036850 describes an organic diode device that comprises an organic diode structure having an anode layer, a cathode layer and an organic layer.
  • One of the anode layer and the cathode layer has a set of contact areas that are distributed over a face of said structure.
  • a barrier layer hermetically covers said structure and is provided with a set of openings aligned with said set of contact areas.
  • a metal conductor has been electroplated on said barrier layer and contacts the set of contact areas via the set of openings.
  • the electroplated metal conductor shunts the anode and the cathode, and therewith provides for an even voltage distribution over the area of a large organic diode device and therewith an even luminance.
  • a method of manufacturing a thin-film optoelectric device comprising the steps of
  • the electrically conductive structure is at least partially prepared before the barrier structure is applied.
  • a surface pattern having protruding and recessed portions is created at a first main surface of the metal substrate.
  • the recessed portions are created by selective removal of material from the first main surface. Removal may take place by a chemical process, e.g. by etching the material away, but may alternatively take place by a mechanical process, e.g. by imprinting, so that material is pressed away from the first main surface.
  • high temperature processing steps such as high temperature deposition of a barrier structure, are applicable until the point in time that organic materials are applied.
  • an electrically conductive structure results comprising mutually connected elongated elements that extend laterally in the barrier layer structure and that can have a relatively large height to width ratio.
  • the barrier layer structure having embedded therein the electrically conductive structure forms a substantially flat surface (apart from a certain roughness caused by the removal process, such as etching). This facilitates the application of the functional layer structure as compared to a surface formed by an electrically conductive structure that is applied upon the barrier layer structure.
  • a transparent electrode layer may be applied at the barrier layer structure with the electrically conductive structure embedded therein, this is not necessary.
  • This is advantageous, as materials that are usually applied for such a layer, such as tin oxide or indium tin oxide are relatively expensive, and are difficult to process due to the fact that they are brittle. It is sufficient that a high conductivity polymer layer such as PEDOT is applied to provide for a current distribution in the areas left open by the electrically conductive structure.
  • the mutually connected elongated elements may have a width and a height in the range of a few ⁇ m to a few tens of ⁇ m and a length in the range of few ⁇ m to a few cm.
  • the thin-film device is locally planar but may be curved in arbitrary shape on a more global scale.
  • a flat thin film device having a thickness D may be curved up to a radius of 50 times the thickness D.
  • the thin-film device according to the present invention may be manufactured in an initially curved shape.
  • the plane of the barrier layer structure defines lateral dimensions.
  • the height of the structure is defined transverse to the plane.
  • the removing process is preferably stopped at the moment that the barrier layer structure is revealed at the location of the recessed portions. If the process is continued longer then the remaining electrically conductive structure will be deepened with respect to the barrier layer structure, while it is preferred that the level of the surface of the remaining electrically conductive structure coincides with the level of the surface of the barrier layer structure. If desired an additional layer of a conducting material may be applied at the electrically conductive structure to equalize the level.
  • a metal substrate is used that comprises a first and a second metal layer that are separated by an etch stop layer.
  • the etch stop layer is removed after the step S4 of removing material from the metal substrate at the second main surface and before the step S5 of applying the functional structure.
  • a thin-film optoelectric device that comprises
  • the electrically conductive structure of a thin-film optoelectric device results from a metal substrate that was prepared by removing material from the first surface before applying the barrier layer at said first surface.
  • a thin-film optoelectric device according to the present invention can be recognized in that the electrically conductive structure has a processed surface within the barrier layer. It will be recognized that the surface within the barrier layer is processed by etching or by imprinting for example. Also the surface of the electrically conductive structure facing away from the first barrier layer structure will be processed. Surfaces facing away from and surfaces within the first barrier layer need not be processed in the same way. For example the surfaces within the first barrier layer may be defined by an imprinting method, while the surfaces facing away from the barrier layer are defined by an etching method.
  • the electrically conductive structure comprises a plurality of parallel lines having a width W, height H and a length L and a distance D.
  • the conductivity of the structure is proportional to H.W/D.
  • the transmissivity is proportional to (D-W)/D.
  • the electrically conductive structure comprises a maze structure, having rectangular openings. In that case the conductivity is proportional to H.((D-W)/D) 2 .
  • the opto electric device is transparent at the side of the first barrier layer.
  • the electrode on the other side of the functional structure does not have to be transparent, and hence can be relatively thick and therewith have a good electrical conductivity.
  • first, second, third etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
  • the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the exemplary term “below” can encompass both an orientation of above and below.
  • the device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
  • Embodiments of the invention are described herein with reference to cross-section illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the invention. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the invention should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing.
  • Figure 1 schematically shows a thin-film opto-electric device 1.
  • the device comprises a functional layer structure 30 that may comprise a plurality of functional layers and that is arranged between a first barrier layer structure 20 and a second barrier layer structure 40.
  • FIGS 2A to 2I schematically show a method according the present invention to manufacture a thin-film opto-electric device according to the invention as shown in Figure 2I .
  • the method according to the present invention comprises a first step S1 of providing a first, metal substrate.
  • the metal substrate comprises for example a metal like aluminum, titanium, copper, steel, iron, nickel, silver, zinc, molybdenum, chromium or alloys thereof.
  • the metal substrate has a height H that is chosen in the range of 50 to 500 ⁇ m, here 100 ⁇ m. If the height H is substantially smaller than 50 ⁇ m, e.g. 25 ⁇ m, the metal substrate will be relatively fragile, and therewith difficult to handle in an industrial process. If the height H is substantially greater than 500 ⁇ m, e.g. 1 mm, the metal substrate will be relatively stiff and therewith also difficult to handle in an industrial process using roll to roll methods. Moreover, a relatively long process time is necessary in step S4 described below.
  • step S2 a first main surface 11 of the metal substrate is patterned.
  • step S2 comprises a first substep wherein a patterned protection layer 14 is applied on the first main surface 11, as is shown in Figure 2B .
  • the patterned protection layer 14 may be a photo resist layer that is applied and patterned by conventional photolithographic technologies.
  • Figure 2C shows a view according to IIC in Figure 2B illustrating an example wherein the protection layer 14 is patterned in the form of a hexagonal maze.
  • Figure 2D shows a second substep, shown in Figure 2D , the metal substrate 10 provided with the patterned protection layer 14 is etched.
  • Etching of the metal substrate layer 10 could be achieved using an acid or a base such as nitric acid, sulphuric acid, sodium hydroxide (NaOH) or potassium hydroxide.
  • an acid or a base such as nitric acid, sulphuric acid, sodium hydroxide (NaOH) or potassium hydroxide.
  • the etching process results in a pattern of protruding portions 12 that is conformal with the pattern of the protection layer 14 and that has recessed portions 13 there between.
  • the recessed portions are etched until a depth ⁇ H of about 10 ⁇ m.
  • the metal substrate 10 will be etched anyhow at this side in a fourth step S4 described later.
  • other etching methods may be used.
  • the etching agent may be selectively applied by a roller at the first side.
  • the patterned protection layer 14 is removed to obtain the semi-finished product of Figure 2E .
  • This semi-finished product is a metal substrate 10 having a thickness H' and a relief thereon with a thickness ⁇ H.
  • the structure may alternatively be applied by imprinting the first main surface 11 with a stamp.
  • a patterned photo resist layer may also be used to form insulating regions onto the substrate with the electrically conductive structure embedded therein, e.g. as described with respect to Figure 7 below.
  • a first barrier layer structure 20 is deposited at the first main surface 11 of the metal substrate 10.
  • the first barrier layer structure 20 is shown for clarity as a single layer it may in practice comprise a plurality of layers, e.g. a stack of alternating inorganic and organic layers, for example a stack comprising an organic layer sandwiched between a first and a second inorganic layer.
  • the inorganic layers are for example of a ceramic material, including but not limited to metal oxide, such as silicon nitride (SiN), silicon oxide, and aluminum oxide.
  • the one or more organic layers are for example provided from a cross-linked (thermoset) material, an elastomer, a linear polymer, or a branched or hyper-branched polymer system or any combination of the aforementioned, optionally filled with inorganic particles of a size small enough to still guarantee light transmission.
  • the material is processed either from solution or as a 100% solids material. Curing or drying may exemplary occur by irradiation of the wet material, pure, or suitably formulated with a photo- or heat-sensitive radical or super-acid initiator, with UV-light, visible light, infrared light or heat, E-beam, g-rays or any combination of the aforementioned.
  • the material of the organic layer preferably has a low specific water vapour transmission rate and a high hydrophobicity.
  • suitable cross-linking (thermoset) systems are any single one or any combination of aliphatic or aromatic epoxy acrylates, urethane acrylates, polyester acrylates, polyether acrylates, saturated hydrocarbon acrylates, epoxides, epoxide-amine systems, epoxide-carboxylic acid combinations, oxetanes, vinyl ethers, vinyl derivatives, and thiol-ene systems.
  • Suitable examples of elastomeric materials are polysiloxanes.
  • Suitable branched or linear polymeric systems are any single one or any copolymer or physical combination of polyacrylates, polyesters, polyethers, polypropylenes, polyethylenes, polybutadienes, polynorbornene, cyclic olefin copolymers, polyvinylidenefluoride, polyvinylidenechloride, polyvinylchloride, polytetrafluoroethylene, polychlorotrifluoroethylene, polyhexafluoropropylene.
  • the organic layers may have a thickness between 0.1 - 100 ⁇ m, preferably between 5 and 50 ⁇ m.
  • the inorganic layer(s) are in practice substantially thinner than the organic layers.
  • the inorganic layers should have a thickness in the range of 10 to 1000 nm, preferably in the range of 100 to 300 nm.
  • Inorganic layers forming the first barrier structure may be applied by all kinds of physical vapour deposition methods such as thermal evaporation, e-beam evaporation, sputtering, magnetron sputtering, reactive sputtering, reactive evaporation, etc. and all kinds of chemical vapour deposition methods such as thermal chemical vapour deposition (CVD), photo assisted chemical vapour deposition (PACVD), plasma enhanced chemical vapour deposition (PECVD), etc.
  • Organic layers may be applied by all kinds of coatings techniques, such spin coating, slot-die coating, kiss-coating, hot-melt coating, spray coating, etc. and all kinds of printing techniques, such as inkjet printing, gravure printing, flexographic printing, screen printing, rotary screen printing, etc.
  • a particular good barrier is formed by a stack of alternating layers of silicon oxide (O) and silicon nitride (N).
  • the structure may be finished with an organic layer as indicated above.
  • the barrier layer structure 20 may serve as a substrate during further processing steps and in the final product.
  • step S3 material is removed from the second main surface 15 of the metal substrate 10, opposite the first main surface 11 in a fourth step S4, e.g. with an etching agent such as NaOH. Therewith the bulk of the metal substrate 10 is removed including its recessed portions 13. Only the protruding portions 12 remain. Therewith the first barrier layer structure 20 opposite the recessed portions 13 is revealed. The protruding portions 12 remaining in the barrier layer structure 20 form an open, electrically interconnected conductive structure 12. A view thereof according to IIH is shown in Figure 2H .
  • step S4 the electrically interconnected conductive structure 12 may be completed by depositing an additional conductive material (for example by screen printing or electroplating a metal ink in these regions).
  • the metal substrate in the form of a first and a second metal layer 10a, 10b that are separated by an etch stop layer 10c, as is shown in Figure 2J .
  • the metal substrate comprises a first copper layer 10a having a thickness H" of 90 ⁇ m, a gold layer 105b having a thickness of 2 ⁇ m and a second copper layer 10b having a thickness ⁇ H of 10 ⁇ m.
  • the etch stop layer 10c e.g. a layer of TiN, may be removed after the step S4 of removing material from the metal substrate at the second main surface and before further layers are applied at the electrically conductive structure 10.
  • a functional structure 30 is applied at the surface defined by the first barrier layer structure 20 with the electrically interconnected conductive structure 12, i.e. at a side of the first barrier layer structure 20 where the material from the metal substrate 10 was removed.
  • the nature of the functional structure 30 depends on the type of electro-optic device that is desired.
  • the electro-optic device is a LED device.
  • the electro-optic device in this case comprises a light emitting layer 34, for example such as polymeric PPV or layer stacks and mixtures of small molecules possibly including phosphorescent emitters such as Ir(ppy) 3 .
  • a hole injection layer (HIL) 32 such as PEDOT is present. More layers may be present, such as a hole transport layer, an electron block layer, an electron transport layer.
  • the hole transport layer 32 provides for a uniform distribution of the current between the mazes formed by the electrically conductive structure 12.
  • the electrically conductive structure 12 forms a first electrode layer, here an anode.
  • a second electrode layer here a cathode 36 is applied.
  • the cathode layer 36 is for example formed as a dual layer of Ba/Al, comprising a first layer of barium having a thickness of 5nm in contact with the functional structure 30 and a second layer of Al having a thickness of 100 nm upon the Ba layer.
  • Other suitable materials are for example LiF or Ag.
  • the second electrode layer 36 may be applied by a number of different techniques including thermal evaporation, printing and coating techniques, lamination of a metal layer or the use of ionic liquids.
  • a second barrier layer structure 40 is then applied to encapsulate the stack 32 - 36 and therewith protect the device from damage by moisture and the like.
  • the second barrier layer structure 40 may be deposited in the same way and with similar methods as the first barrier layer structure 20.
  • FIG. 2I a thin-film electro-optic device is obtained as shown in Figure 2I .
  • the active layer structure 30 is centrally arranged within the encapsulating package formed by the first and the second barrier layer structure 20, 40. This is favorable for the mechanical stability of the device for example upon flexing thereof.
  • an organic or organo-silicon layer which is enclosed by inorganic layers in the first and/or the second barrier layer structure 20, 40 may contain getter material or getter particles such as CaO.
  • the thin-film optoelectric device so obtained comprises a functional layer structure 30 that is arranged between a first barrier layer structure 20 and a second barrier layer structure 40.
  • the first electrode layer 12 is embedded in the first barrier layer structure 20 and is formed by an open, electrically interconnected conductive structure 12.
  • the structure comprises at least one elongated element 12a of a metal that laterally extends within the barrier layer structure 20.
  • the open, electrically interconnected conductive structure 12 is arranged against the functional layer structure 30.
  • the open, electrically interconnected conductive structure 12 is formed as a hexagonal maze.
  • Figure 4A shows in a photograph with an overview of the device, here having a size of 15x15 cm.
  • the portion shown therein comprises mutually interconnected elongated elements 12a, 12b, 12c having a width w and a height h. In this embodiment the width w is approximately 90 micrometer.
  • the height h is 12 to 16 micrometer.
  • the elements have a length of approximately 3 mm.
  • the hexagonal maze 12 is at its circumference electrically connected to a conducting frame 14.
  • the frame 14 may comprise of metal supply conductors wider than the elongated elements 12a, 12b, 12c, e.g. have a width in the range of 1 to 5 mm, for example 1 mm to facilitate an electrical contact with the electrically interconnected conductive structure 12.
  • the frame 14 was formed from the metal substrate 10 in the same process wherein the hexagonal maze 12 was formed.
  • a frame 14 may be formed by an alternative process.
  • the electrically interconnected conductive structure 12 has a processed surface.
  • This processed surface will form the processed surface 12p facing the functional layer structure (30) as indicated in Figure 2I .
  • the surface 12p is processed by etching.
  • the etched surface has bubbles with a size in the range of a few to a few tens of micrometers.
  • the elongated elements of the electrically interconnected conductive structure 12 have such a processed surface 12s embedded in the barrier layer 20 and facing laterally. Alternatively the laterally facing surfaces 12s of the elongated elements could have been obtained by imprinting.
  • Figures 3A to 3H show a second embodiment of a method according to the invention.
  • the method shown differs from the embodiment shown in Figure 2A to 2I in that in an additional step S3A, shown in Figure 3F a substrate 50 of an organic material is applied at a free surface of the barrier structure 20 before removing material from the second main surface 15 of the metal substrate 10.
  • the substrate 50 may be an organic layer of the same type as described above for use in the barrier structure 20 described in connection with the first embodiment of the method in Figure 2F .
  • the barrier structure 20 in this embodiment is for example a stack of layers of a first inorganic material (e.g. of silicon oxide) and a second inorganic material (e.g. silicon nitride) that alternate each other.
  • a first inorganic material e.g. of silicon oxide
  • a second inorganic material e.g. silicon nitride
  • Figures 5A - 5C show examples of some other topologies of electrically interconnected conductive structures 12. For clarity only the structure 12 is shown.
  • the open, electrically interconnected conductive structure 12 comprises a plurality of elongated elements 12f of a metal that laterally extend over the full width of the device and that are mutually connected by bus-bars 12g of an electrically conducting frame to facilitate an electrical contact with the device 1.
  • the elongated elements 12f for example have a width in the range of 10 to 100 ⁇ m, e.g. 50 ⁇ m.
  • the busbars 12g have a width in the range of 1 to 5 mm, for example 1 mm.
  • the at least one electrically conductive structure 12 is a comb structure.
  • Figure 5C shows a pair of electrically conductive structures 12i, 12j, each in the form of a comb structure, and gripping into each other.
  • Figure 5D shows an example wherein a plurality of meandering electrically conductive structures 12k, 121 is arranged.
  • a pair of conductors is shown that may for example each carry a polarity of a power source.
  • additional electrically conductive structures may be present, for example to carry control signals.
  • Figure 6 shows an example how the device of Figure 2I may be provided with external electrical contacts.
  • a first external electrical contact 91 is electrically connected via an intermediate conductor 92 to the electrically interconnected conductive structure 12.
  • the intermediate conductor 92 is formed for example by drilling a hole, preferably by laser drilling, in the barrier structure 20, and filling the hole with a conductive adhesive.
  • an electrical connection 94 may be made between an external contact 93 and the second electrode layer 36.
  • one of the electrically conductive structures e.g. 12i may form the electric supply for the anode and the other 12j may form the electric supply for the cathode.
  • one of the electrically conductive structures 12j is covered by an insulating layer 24, so that it does not contact the hole injection layer 32.
  • the insulating layer 24 is applied after step S4 of removing material from the metal substrate 10 at a second main surface 15 and the step S5 of applying a functional structure 30.
  • the insulating layer 24 is for example a photo-resist layer that is patterned in a form conformal to the electrically conductive structure 12j according to a method known as such.
  • transversal electrical conductors 28 may be applied to contact the electrically conductive structure 12j with the other electrode 36.
  • Methods to form the transverse electrical conductors 28 and the ways to insulate them from the active layer structure 30 are described in more detail in the earlier filed European application 08159929.2 (P85193EP00).
  • a connection between external contact 93 and the electrically conductive structure 12j is provided by a transverse electrical connection 94 through the first barrier structure 20.
  • Figure 5D having embedded therein the electrically conductive structures 12k, 121.
  • getter materials may be applied in various parts of the device.
  • getter material may be enclosed with the functional structure.
  • getter materials may be present in an organic layer of a barrier structure.
  • Various desiccant materials such as molecular sieves (or zeolites), alkaline earth metal oxides, metal oxides, sulfates, chlorides, bromides may be selected as the getter.
  • Zeolites are particularly suitable. Zeolites are materials that absorb moisture by physical absorption and may be naturally or synthetically derived, both are suitable. Natural zeolites are hydrated silicates of aluminum and either sodium or calcium or both, of the type Na2O, Al2O3, xH2O, and xSiO2.
  • Synthetic zeolites are made either by a gel process or a clay process, which forms a matrix to which the zeolite is added.
  • Well known zeolites include chabazite (also referred to as zeolite D), clinoptilolite, erionite, faujasite (also referred to as zeolite X and zeolite Y), ferrierite, mordenite, zeolite A, and zeolite P.
  • type 3A, 4A and 13X zeolites all have the ability to adsorb water molecules.
  • Such zeolites comprise Na2O, Al2O3 and SiO2.
  • Certain adsorbent getters can adsorb gaseous contaminants in addition to moisture, such as gaseous H2 and O2.
  • the opto-electric device may further be provided with a layer provided with scattering particles having a relatively high refractive index in comparison to the relatively low reflective index of the layer to improve light output.
  • a layer may be applied for example at a free surface of the device.
  • the present invention is in particularly described for a light-emitting diode that is constructed as a thin-film optoelectric device.
  • the present invention is also applicable to a photo-voltaic cell.
  • the functional structure 30 should be replaced by a functional structure, known as such, that provides for a conversion of photon-radiation into an electric current.
  • the present invention is also applicable to an electrochromic cell.
  • the functional structure 30 should be replaced by a functional structure, known as such, that provides for a voltage dependent transmission of photon-radiation.
  • the embedded electrically conductive structure 12 is the anode.
  • the cathode of the device may be formed by the embedded electrically conductive structure.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photovoltaic Devices (AREA)
EP09167416A 2009-08-06 2009-08-06 Optoelektrische Vorrichtung und Verfahren zu deren Herstellung Withdrawn EP2282360A1 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
EP09167416A EP2282360A1 (de) 2009-08-06 2009-08-06 Optoelektrische Vorrichtung und Verfahren zu deren Herstellung
PCT/NL2010/050498 WO2011016724A1 (en) 2009-08-06 2010-08-06 Opto-electric device and method for manufacturing the same
US13/389,058 US9333531B2 (en) 2009-08-06 2010-08-06 Opto-electric device and method for manufacturing the same
EP10742606A EP2462639A1 (de) 2009-08-06 2010-08-06 Optoelektronische vorrichtung und herstellungsverfahren dafür
KR1020127005961A KR20120054620A (ko) 2009-08-06 2010-08-06 광전기 디바이스 및 그의 제조 방법
JP2012523578A JP5854996B2 (ja) 2009-08-06 2010-08-06 光電気装置及びその製造方法
CN201080045279.5A CN102576803B (zh) 2009-08-06 2010-08-06 光电器件及其制造方法

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EP09167416A EP2282360A1 (de) 2009-08-06 2009-08-06 Optoelektrische Vorrichtung und Verfahren zu deren Herstellung

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KR (1) KR20120054620A (de)
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WO (1) WO2011016724A1 (de)

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EP2462639A1 (de) 2012-06-13
CN102576803A (zh) 2012-07-11
US20130075777A1 (en) 2013-03-28
JP5854996B2 (ja) 2016-02-09
KR20120054620A (ko) 2012-05-30
JP2013501341A (ja) 2013-01-10
WO2011016724A1 (en) 2011-02-10
US9333531B2 (en) 2016-05-10
CN102576803B (zh) 2015-07-22

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