EP2174200A1 - Dispositif de commutation d'alimentation electrique a reponse rapide et reseau alimentation electrique equipe d'un tel commutateur. - Google Patents
Dispositif de commutation d'alimentation electrique a reponse rapide et reseau alimentation electrique equipe d'un tel commutateur.Info
- Publication number
- EP2174200A1 EP2174200A1 EP08786268A EP08786268A EP2174200A1 EP 2174200 A1 EP2174200 A1 EP 2174200A1 EP 08786268 A EP08786268 A EP 08786268A EP 08786268 A EP08786268 A EP 08786268A EP 2174200 A1 EP2174200 A1 EP 2174200A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- voltage
- power supply
- vdd
- transistor
- switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0008—Arrangements for reducing power consumption
- H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
Definitions
- the present invention relates to a fast response power switching device. It also relates to a power supply network equipped with such a switch.
- the invention applies in particular to all the integrated circuits of recent technology in which it is important to reduce the leakage currents of the transistors of the unused circuit parts.
- the invention is thus particularly applicable for most systems powered by battery or battery and more particularly for mobile phone circuits.
- the transistors In integrated circuits of technology 130 nm or less, the transistors have a significant leakage current when they are in the open state. This results in an electrical consumption of the circuits even when they are inactive. This consumption can be very troublesome especially for circuits powered by batteries or batteries, especially when they are a large part of the time in a standby mode where only a small part of the circuit is active. This is especially true for mobile phones.
- An effective technique for reducing this leakage current when the circuit is inactive is to cut off the power supply of this circuit.
- Other techniques particularly that of supplying the substrate or box of a CMOS circuit with a negative voltage in order to increase the threshold voltage of the NMOS transistors, are possible but more difficult to implement.
- a problem with the power cutoff technique is that when the power is turned back on, the current draw created by the recharge of the present capacitance between the power grids of a switched block must not cause the voltage to drop. supply upstream of the switch so as not to hinder the operation of the other blocks. It is then necessary to limit this current draw when powering up.
- one solution consists in producing a supply switch consisting of several transistors in parallel with a progressive commutation of these transistors using a series of delay circuits.
- a solution is described in particular in the document "Techniques for Wireless Applications by Philippe Royannez et al., ISSCC2005, paper 7.6, pages 138 and 139".
- this switching time is determined by simulation and it is necessary to take a large margin to take into account the dispersion of the characteristics of the transistors. Due to this margin, the power-up time may be high, prohibiting the use of these solutions for too low power-off times or in the event of a rapid system response.
- An object of the invention is in particular to allow a much lower switching time allowing the removal of the margin required for previous solutions, while not increasing the surface or bulk of the circuit.
- the subject of the invention is a device for switching a power supply connected to a set of blocks, comprising at least one switch connecting the general power supply VDD to that of the block, the value of the supply current flowing in the switch being controlled according to the difference between the supply voltage VDD at the other blocks and a voltage threshold.
- this voltage threshold may be greater than the voltage required for the operation of the other blocks.
- the result of the difference in voltage between the voltage of the supply VDD at the other blocks and the voltage threshold is for example provided by a differential amplifier, the voltage of the supply VDD being connected to an input of the amplifier and the threshold being connected to another input.
- the switch being a transistor, the output voltage of the amplifier controls for example the value of the current flowing through the transistor. If the switch is an MOS transistor P, the supply voltage VDD is for example connected to the negative input of the amplifier and the voltage threshold is then connected to the positive input.
- the transistor is for example turned off by cutting the appropriate power supply terminal of the amplifier. In the case of a switch made by an MOS P, the interruption of the negative power supply of the amplifier causes the appearance of a positive voltage at the output of the amplifier which blocks the switching transistor.
- the amplifier is for example connected to the power supply via a transistor, the power supply of the amplifier being cut off by putting this transistor in the off state.
- the power supply of the amplifier is for example cut off by cutting off the power supply of its foot transistor.
- the threshold voltage is for example equal to a percentage of a reference voltage VDDref corresponding to the nominal value of the VDD power supply.
- the invention also relates to a power supply network of a set of blocks. Each block being connected to a power source VDD by a power bus, a block is then connected to the bus via a switching device as described above.
- the power source is for example a battery.
- FIG. 2 an exemplary embodiment of a device according to the invention
- FIG. 3 a variant of one of the elements of the exemplary embodiment given in FIG. 2.
- FIG. 1 illustrates the operating principle of a device according to the invention.
- Figure 1 thus shows a block 1 powered by a voltage VDD.
- VDD voltage
- a block comprises a circuit, analog or digital, corresponding for example to a component or a functional unit comprising several components.
- Such a block 1 even in the idle state can continue to consume an electric current if it remains connected electrically to the VDD power supply.
- an effective solution to prevent this parasitic consumption is to cut off the power supply of the block 1.
- a switch 3 is connected between the block 1 and the VDD power supply.
- the switch is for example a field effect transistor.
- a bipolar transistor could be used.
- the block 1 when the transistor 3 is passing, the block 1 is supplied with the voltage VDD at the drain-source voltage of the transistor.
- Vs the power supply voltage at the terminals 5 of the block
- Vs VDD - V D s
- V D s the voltage between the drain and the source of the transistor.
- the voltage V D s would be replaced by the voltage between the collector and the emitter.
- the transistor 3 is turned off, and then, to restore the voltage, the transistor is turned on. A current draw is then produced at the power supply causing the voltage VDD to drop before it rises.
- the switch 3 is controlled so that the voltage outside the block concerned 1 remains greater than the voltage necessary for the proper operation of the other blocks by directly comparing this voltage to a reference voltage. If the voltage outside block 1 is below a given threshold, the current flowing in switch 3 is limited. The measured voltage is the voltage of the supply VDD at the level of the other blocks, the comparison is then made in upstream of the switch 3.
- the comparator used is a differential amplifier 4 whose output controls the switch 3 which in this case is a field effect transistor type MOS P.
- the negative input of the differential amplifier 4 is connected to the supply voltage VDD and the positive input is connected to the reference voltage VDDref, forming the comparison threshold.
- the reference voltage is for example equal to the nominal supply voltage of the blocks minus 5%, for example 1.05V. Technologies where the invention can be advantageously used are for example technologies where the power supply is of the order of 1, 3V for the 130nm technology, at 1, 1 V for the 65nm technology. This reference voltage can be either connected directly to the input of the amplifier 4 or connected via a divider bridge 6.
- the divider bridge makes it possible to make a comparison with a threshold corresponding to a percentage of the nominal supply voltage, and the reference voltage can be advantageously provided by the supply voltage of the circuit taken directly on the supply pads (or better, a special power pad), so as not to be impacted by voltage drops caused by currents flowing in the parasitic impedances of the supply network.
- the divider bridge may also make it possible, for example, to obtain for example an adjustable threshold at the input of the divider bridge by varying its parameters, in particular by means of a variable resistor.
- the voltage at the input of the differential amplifier 4 and at the output of the divider bridge 6 is substantially equal to 95% of the reference voltage VDDref.
- the transistor 3 being MOS P type, it is controlled in the on state when its gate-source voltage is negative. This gate voltage is supplied by the output of the differential amplifier 4. Possibly an interface (not shown) is placed between the output of the amplifier 4 and the gate of the transistor 3.
- the supply voltage is equal to VDD, greater than 95% of the voltage VDDref, itself equal to the nominal supply voltage.
- the voltage present at the negative input of the operational amplifier 4, equal to the voltage VDD, is greater than the voltage present at the positive input, equal to 0.95 x VDDref.
- the output of the amplifier is then negative and the transistor 3 is then in the on state.
- transistor 3 must in particular be turned off.
- the device may comprise a control 7 for starting the block. This control acts for example on the negative power supply of the amplifier 4.
- the power supply of the amplifier 4 is for example cut off by means of the aforementioned control 7.
- the power supply of the block 1 is restored when the power supply of the amplifier 4 is reestablished.
- the transistor 3 then returns to the on state.
- the voltage VDD shared with the other blocks
- the output voltage of the amplifier 4 controlling the gate of the transistor 3 remains lower than VDD, leading to a gate-source voltage of the negative transistor 3.
- the voltage drops.
- the voltage VDD falls below 0.95 x VDDref
- the voltage at the positive input of the amplifier becoming greater than the voltage at the negative input
- the output voltage of the amplifier becomes positive, and proportional to the difference VDDref - VDD.
- the current flowing in the transistor 3 is then limited, the limitation increasing with the difference VDDref - VDD.
- a device makes it possible to switch the block 1 as fast as possible without the external supply voltage VDD falling by more than 5% of the nominal reference voltage VDDref, in the case where this threshold has been set. at 95% of VDDref.
- Other settings are of course possible.
- the internal voltage of the switch for example V D s , is taken into account for the comparison.
- the external supply voltage at these blocks considered takes into account the internal voltages of the switches used.
- FIG. 2 presents a possible embodiment with an example of implementation of the control 7 of the transistor 3.
- This control comprises a transistor 21, for example a field effect transistor, connecting the low power supply of the amplifier 4 and that of the divider bridge 6 to zero potential, especially the mechanical mass.
- the transistor 21 is itself controlled by a control voltage 22.
- the cutoff, or power off of the block is done very simply by blocking the control transistor 21 which then cuts off the low power supply of the amplifier as well as that of the divider bridge.
- the output voltage of the amplifier can only be the voltage VDD blocking the switching power supply transistor 3 MOS P, the voltage VDD being the high supply voltage of the amplifier 4.
- current flowing in the circuit 7 is low enough so that it is not necessary to take special precautions when it is put into operation.
- This solution has the particular advantage of also cutting the leakage currents of the differential amplifier 4.
- FIG. 3 shows an alternative embodiment where the foot transistor 21 1 of the differential amplifier is used.
- the existing foot transistor 21 1 of the differential amplifier is cut off in order to cut off its power supply, instead of adding the transitor 21 in series as illustrated in FIG. 2.
- FIG. a differential amplifier It comprises two transistors 31, 32 in parallel, for example of the MOS type, connected by their drain, via a load resistor 33, 34, to the voltage VDD and by their sources to the drain of the foot transistor 21 1.
- the amplifier inputs are formed of the gates of the transistors 31, 32.
- the source of the foot transistor is connected to the ground and its gate is controlled by the control voltage 22.
- the load resistors 31 and 32 can be realized by means of of transistors.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Direct Current Feeding And Distribution (AREA)
- Electronic Switches (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
- Logic Circuits (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0705520A FR2919446B1 (fr) | 2007-07-27 | 2007-07-27 | Dispositif de commutation d'alimentation electrique a reponse rapide et reseau alimentation electrique equipe d'un tel commutateur. |
| PCT/EP2008/059488 WO2009016052A1 (fr) | 2007-07-27 | 2008-07-18 | Dispositif de commutation d'alimentation electrique a reponse rapide et reseau alimentation electrique equipe d'un tel commutateur. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP2174200A1 true EP2174200A1 (fr) | 2010-04-14 |
Family
ID=39167533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP08786268A Withdrawn EP2174200A1 (fr) | 2007-07-27 | 2008-07-18 | Dispositif de commutation d'alimentation electrique a reponse rapide et reseau alimentation electrique equipe d'un tel commutateur. |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8803503B2 (fr) |
| EP (1) | EP2174200A1 (fr) |
| JP (1) | JP2010534992A (fr) |
| FR (1) | FR2919446B1 (fr) |
| WO (1) | WO2009016052A1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5481211B2 (ja) * | 2010-01-20 | 2014-04-23 | 国立大学法人 東京大学 | 半導体集積回路装置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1199556B (it) * | 1984-07-09 | 1988-12-30 | Zanussi Elettromecc | Alimentatore a corrente continua con protezione contro le sovracorrenti |
| JP3177965B2 (ja) * | 1998-11-09 | 2001-06-18 | 日本電気株式会社 | 電源遮断の応答機能付きモード切替手段を備えた半導体集積論理回路および半導体集積論理回路の電源供給方法 |
| US6651138B2 (en) * | 2000-01-27 | 2003-11-18 | Hewlett-Packard Development Company, L.P. | Hot-plug memory catridge power control logic |
| FR2819904B1 (fr) * | 2001-01-19 | 2003-07-25 | St Microelectronics Sa | Regulateur de tension protege contre les courts-circuits |
| JP3951773B2 (ja) * | 2002-03-28 | 2007-08-01 | 富士通株式会社 | リーク電流遮断回路を有する半導体集積回路 |
| JP2004032641A (ja) * | 2002-06-28 | 2004-01-29 | Yazaki Corp | 半導体スイッチ装置 |
| JP2004229193A (ja) * | 2003-01-27 | 2004-08-12 | Renesas Technology Corp | 半導体装置 |
| US7106042B1 (en) * | 2003-12-05 | 2006-09-12 | Cypress Semiconductor Corporation | Replica bias regulator with sense-switched load regulation control |
| KR20070034468A (ko) * | 2004-05-14 | 2007-03-28 | 제트모스 테크놀로지 인코포레이티드 | 내부 전압 발생기 구조 및 전력 운영 방법 |
| JP4812085B2 (ja) * | 2005-12-28 | 2011-11-09 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
| JP2007267162A (ja) * | 2006-03-29 | 2007-10-11 | Nec Electronics Corp | 半導体集積回路 |
| JP5021954B2 (ja) * | 2006-05-09 | 2012-09-12 | ローム株式会社 | 低電圧誤動作防止回路、方法ならびにそれを利用した電源回路および電子機器 |
| JP2008218722A (ja) * | 2007-03-05 | 2008-09-18 | Renesas Technology Corp | 半導体集積回路装置 |
-
2007
- 2007-07-27 FR FR0705520A patent/FR2919446B1/fr active Active
-
2008
- 2008-07-18 US US12/670,731 patent/US8803503B2/en not_active Expired - Fee Related
- 2008-07-18 WO PCT/EP2008/059488 patent/WO2009016052A1/fr not_active Ceased
- 2008-07-18 EP EP08786268A patent/EP2174200A1/fr not_active Withdrawn
- 2008-07-18 JP JP2010518610A patent/JP2010534992A/ja active Pending
Non-Patent Citations (2)
| Title |
|---|
| None * |
| See also references of WO2009016052A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010534992A (ja) | 2010-11-11 |
| WO2009016052A1 (fr) | 2009-02-05 |
| FR2919446B1 (fr) | 2009-12-18 |
| US8803503B2 (en) | 2014-08-12 |
| FR2919446A1 (fr) | 2009-01-30 |
| US20100213912A1 (en) | 2010-08-26 |
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