Classifications

• • C—CHEMISTRY; METALLURGY
  • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
  • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
  • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
  • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
  • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
  • C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
  • C03C17/23—Oxides
  • C03C17/245—Oxides by deposition from the vapour phase
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
  • C03C17/23—Oxides
  • C03C17/245—Oxides by deposition from the vapour phase
  • C03C17/2453—Coating containing SnO2
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/08—Oxides
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/08—Oxides
  • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
  • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
  • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C2217/00—Coatings on glass
  • C03C2217/20—Materials for coating a single layer on glass
  • C03C2217/21—Oxides
  • C03C2217/211—SnO2
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C2218/00—Methods for coating glass
  • C03C2218/10—Deposition methods
  • C03C2218/15—Deposition methods from the vapour phase
  • C03C2218/154—Deposition methods from the vapour phase by sputtering
• • C—CHEMISTRY; METALLURGY
  • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
  • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
  • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
  • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
  • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
  • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
  • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
  • C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
• • C—CHEMISTRY; METALLURGY
  • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
  • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
  • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
  • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
  • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
  • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
  • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
  • C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
  • C04B2235/3253—Substoichiometric niobium or tantalum oxides, e.g. NbO
• • C—CHEMISTRY; METALLURGY
  • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
  • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
  • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
  • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
  • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
  • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
  • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
  • C04B2235/3256—Molybdenum oxides, molybdates or oxide forming salts thereof, e.g. cadmium molybdate
• • C—CHEMISTRY; METALLURGY
  • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
  • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
  • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
  • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
  • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
  • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
  • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
  • C04B2235/3258—Tungsten oxides, tungstates, or oxide-forming salts thereof
• • C—CHEMISTRY; METALLURGY
  • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
  • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
  • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
  • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
  • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
  • C04B2235/40—Metallic constituents or additives not added as binding phase
  • C04B2235/404—Refractory metals
• • C—CHEMISTRY; METALLURGY
  • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
  • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
  • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
  • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
  • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
  • C04B2235/54—Particle size related information
  • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
  • C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
• • C—CHEMISTRY; METALLURGY
  • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
  • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
  • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
  • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
  • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
  • C04B2235/54—Particle size related information
  • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
  • C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/12—All metal or with adjacent metals
  • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
  • Y10T428/12771—Transition metal-base component
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
  • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
  • Y10T428/24364—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.] with transparent or protective coating

Definitions

• TaaOs and/or Nb 2 Os using pyrochiore-reiated compounds for use in thick fiim resistor compositions.
• U.S. Patent 6,534,183 describes compositions useful to prepare transparent electroconductive films. Most of the compositions described therein require the presence of indium oxide, in the broad compositions described (see column 5, lines 13-22 and column 6, lines 2-68), the reference suggests that zinc oxide and relatively small amounts of one or more oxides selected from the group consisting of iridium oxide, rhenium oxide, palladium oxide, vanadium, molybdenum and ruthenium also be added. The reference does not define the phrase "molybdenum oxide.” As is known in the art, molybdenum oxide can have valencies of 2, 3, 4, 5 and 6. In general, where the art refers to "molybdenum oxide", the oxide “molybdenum trioxide ⁇ MOO3) is meant.
• Transparent conductive films from tungsten or germanium-doped for indium oxide see US Patent 6,911 ,163 and from indium oxide doped with ZnO and/or WO 3 (see US Patent application publications 2005/0239660 and 2006/0099140, "High electron mobility W-doped ln 2 U 3 thin films by pulsed laser deposition," Newhouse et ai, Applied Physics Letters, Volume 87, 2005, pages 112108-1 through 12108-3) are also known.
• the resultant material is apparently a molybdenum oxide- doped tin oxide (see the 5 th paragraph in the right column of page 1213).
• the film In order to be commercially useful in flat panel displays as transparent conducting oxide, the film must have an electrical conductivity of at least 10 3 S/cm and a light transmittance of at least 80%.
• the resistivity should be less than 10 ⁇ 2 ohm-cm.
• the resistivity should be between 1 and 10 8 ohm-cm.
• a material having a resistivity of 1 ohm-cm is considered as something between a conductor and a semiconductor.
• the film can be either a conductor or a semiconductor. If the film has semiconductor properties, it then can be used as semiconductor layer in transparent electronics applications (e.g., transparent thin-film transistor). DESCRIPTION OF THE INVENTION
• the present invention is directed to a composition that can be used to produce a transparent conductive film, the sintered product of such composition, a sputtering target made from the sintered product and a transparent electroconductive film made from the composition.
• the present invention is directed to a composition consisting essentially of: a) from about 60 to about 99 mole% of SnO 2 , and b) from about 1 to about 40 mole% of one or more materials selected from the group consisting of i) Nb 2 O 5 , ⁇ ) NbO, iii) NbO 2 , iv) WO 2 , v) a material selected consisting of a) a mixture of MoO 2 and Mo and b) Mo, vii) W, vii) Ta 2 Os, and viii) mixtures thereof, wherein the mole %s are based on the total product and wherein the sum of components a) and b) is 100.
• the invention is also directed to the sintered product of such composition, a sputtering target made from the sintered product and a transparent electroconductive film made from the composition.
• Preferred ranges are a) from about 90 to about 99 moie% of SnO 2 and b) from about 1 to about 10 mole% of the component b)i) through b)vi ⁇ ).
• a preferred ratio of moles of MoO 2 to moles of Mo is from about 100:1 to 1 :100, and preferably from 10:1 to 1 :10.
• the films produced from these compositions are characterized by light transmittances (i.e., transparencies) of 80% or more, and in some instances by electrical conductivities of more than 10 3 S/cm.
• the powders are either used in the as-received state after applying a rough sieving (to ⁇ 150 ⁇ m) or they are uniformly ground and mixed in a suitable mixing and grinding machine (e.g., in a dry ball or wet ball or bead mil! or ultrasonica ⁇ y). tn case of wet processing, the slurry is dried and the dried cake broken up by sieving. Dry processed powders and mixtures are also sieved. The dry powders and mixtures are granulated. Concerning shaping into bodies of the desired shape, there are several processes that can be used.
• a cold compaction process can be used.
• the shaping can be performed using substantiaiiy any appropriate process.
• Known processes for cold compaction are cold axial pressing and cold isostatic pressing ("CiP").
• CiP cold axial pressing
• the granulated mixture is placed in a mold and pressed to form a compact product, (n cold isostatic pressing, the granulated mixture is filled into a flexible mold, sealed and compacted by means of a medium pressure being applied to the material from ail directions.
• Thermal consolidation without or with the application of mechanical or gas pressure can also be used and is preferably used for further densification and strengthening.
• the thermal consolidation can be performed using substantially any appropriate process.
• Known processes include sintering in vacuum, in air, in inert or reactive atmosphere, at atmospheric pressure or at increased gas pressure, hot pressing and hot isostatic pressing (“HIP").
• Sintering is performed by placing the shaped material into an appropriate furnace and running a specified temperature-time gas- pressure cycle.
• the hot pressing process the granulated mixture is placed in a mold and is sintered (or baked) with simultaneous mechanical pressing.
• the HIP process there are at least two possibilities.
• the first one called sinter-HIP
• the shaped material is placed into the HIP-furnace and a temperature-time cycle at low gas-pressure is primarily run until the stage of closed pores is reached, corresponding with about 93-95% of the theoretical density. Then the gas-pressure is increased, acting as a densification means to eliminate residual pores in the body.
• the so-called clad-HIP the granulated mixture is placed in a closed mold made of refractory metal, evacuated and sealed. This mold is placed into the HIP-furnace and an appropriate temperature-time gas-pressure cycle is run. Within this cycle, the pressurized gas performs an isostatic pressing ⁇ i.e., pressure is applied to the moid and by the mold to the material inside from all directions).
• the raw material oxides are preferably ground as fine as possible
• the shaped bodies are generally sintered (or baked) at a temperature of from about 500 to about 1600 0 C for a period of time of from about 5 minutes to about 8 hours, with or without the application of mechanical or gas pressure to assist in densification.
• the product can be square, rectangular, circular, oval or tubular.
• the shape can be the same as the desired sputtering target. Regardless of the shape of the sintered product, it is then machined into a size and shape which will fit to an appropriate sputtering unit.
• the shape and dimensions of the sputtering target can be varied depending on the ultimate use.
• the sputtering targets may be square, rectangular, circular, oval or tubular. For large size targets, it may be desirable to use several smaller sized parts, tiles or segments which are bonded together to form the target.
• the targets so produced may be sputtered to form fitrns on a wide variety of transparent substrates such as glass and polymer films and sheets.
• transparent substrates such as glass and polymer films and sheets.
• one advantage of the present invention is that transparent, effectroconductive films can be produced from the compositions of the present invention by depositing at room temperature and the resultant film will have excellent conductivity and transparency.
• a plate made in accordance with the invention is made into a sputtering target.
• the sputtering target is made by subjecting the plate to machining until a sputtering target having desired dimensions is obtained.
• the machining of the plate can be any machining suitable for making sputtering targets having suitable dimensions. Examples of suitable machining steps include but are not limited to laser cutting, water jet cutting, milling, turning and lathe-techniques.
• the sputtering target may be polished to reduce its surface roughness.
• the dimensions and shapes of the plates can vary over a wide range.
• Suitable methods are those that are able to deposit a thin film on a piate (or substrate).
• suitable sputtering methods include, but are not limited to, magnetron sputtering, magnetically enhanced sputtering, pulse laser sputtering, ion beam sputtering, triode sputtering, radio frequency (RF) and direct current (DC) diode sputtering and combinations thereof.
• RF radio frequency
• DC direct current
• sputtering is preferred, other methods can be used to deposit thin films on the substrate plate.
• any suitable method of depositing a thin film in accordance with the invention may be used.
• Suitable methods of applying a thin film to a substrate include, but are not limited to, electron beam evaporation and physical means such as physical vapor deposition.
• the thin film applied by the present method can have any desired thickness.
• the film thickness can be at least 0.5 nm, in some situations 1 nm, in some cases at least 5 nm, in other cases at least 10 nm, in some - ⁇ J - situations at least 25 nm, in other situations at least 50 nm, in some circumstance at least 75 nm, and in other circumstances at ieast 100 nm.
• the film thickness can be up to 10 ⁇ m, in some cases up to 5 ⁇ m, in other cases up to 2 ⁇ m, in some situations up to 1 ⁇ m, and in other situations up to 0.5 ⁇ m.
• the fiim thickness can be any of the stated values or can range between any of the values stated above.
• the thin films can be used in flat pane! displays (inciuding television screens and computer monitors), touch screen panels (such as are used, e.g., in cash registers, ATMs and PDAs), organic light-emitting diodes (such as are used, e.g., in automotive display panels, cell phones, games and small commercial screens), static dissipaters, electromagnetic interference shielding, solar cells, electrochromic mirrors, LEDs, sensors, transparent electronics, other electronic and semiconductor devices and architectural heat reflective, low emissivity coatings.
• Transparent electronics is an emerging field for potential applications such as imaging and printing.
• the inorganic oxide of the present invention have higher mobility, better chemical stability, ease of manufacture and are physically more robust.
• Starck having a purity >99.9% and a mean particle diameter of ⁇ 25 ⁇ m iv) WO 2 , an HCST-internal intermediate product in the production of W-powder, having a purity of >99% and a mean particle diameter of ⁇ 20 ⁇ m v) MOO 2 - MMP3230, a commercial product from H. C. Starck, having a purity of >99.9% and a mean particle diameter of ⁇ 10 ⁇ m vi) Mo - OMPF - 250 mesh (passing through a 63 ⁇ m mesh sieve), a commercial product from H.C. Starck, having a purity of 99.95% vii) Ta 2 Os - Grade HPO 600, a commercial product of H.C.
• Heating-up was stopped when the displacement rate approached zero, followed by a 15 minute holding time at this maximum temperature. Then, the temperature was reduced in a controlled manner of 10 K/minute to 600 0 C, simultaneously the pressure was reduced. Then, the furnace was shut-off to cooi down completely. The temperature where densification ceased was noted. After removing the consolidated sample from the cold mold, the part was cleaned and the density determined. For film deposition experiments, the sample was ground on its flat sides to remove contaminations and machined by water-jet cutting to a 3" disc. From cut-offs of the samples, electrical conductivity of the bulk material was measured using the known four-wire method.
• Deposition was performed on a glass substrate using a PLD-5000 system commercially available from PVD Products at the temperature noted and under the conditions noted.
• the thickness of the deposited film was about 100 nm, Nano Pulse Laser Deposition system built by PVD Products (Wilmington, MA) was used for thin film deposition.
• Light transmittance was measured using a Cary 50 Scan
• Spectrophotometer having a spectrum range of form 190 to 100 nm (with resolution of 1.5 nm), available form Varian. The unit has capacity to measure absorption, % transmission and % reflectivity. The transmittance numbers reported represent the average of light transmittance from 400 to 750 nm.
• the resistivity was measured by Model 280 SI Sheet Measurement System made by Four Dimensions (Hayward, California).
• the resistivity tester had a range of 10 "3 to 8X10 5 ohm/square for sheet resistance with 2" to 8 H diameter platen.
• the system also has the capability of resistivity contour mapping of the thin film surface.
• the device measures "sheet resistance.” Sheet resistance is converted to resistivity according to the following formula;
• Resistivity sheet resistance x thickness (in cm)
• Resistivity/room temperature deposition 1.69 x 10 '1 ⁇ -cm Transmittance/room temperature deposition: 80.4% Resistivity/200°C: 5.35 x 10 "3 ⁇ -cm Transmittance/200°C: 85.3%
• the temperature where densification ceased was 880°C.
• the calculated theoretical density of this composition was 6.74 g/cm 3 and the measured density of the hot-pressed plate was 6.34 g/cm 3 .
• SnO ⁇ -powder and NbO-powder were mixed in the above-noted ratio by the Wet Method and hot-pressed as described.
• the temperature where densification ceased was ⁇ 1000°C.
• the calculated theoreticat density of this composition was 7.06 g/cm 3 and the measured density of the hot-pressed plate was 5.64 g/cm 3 .
• the temperature where densification ceased was ⁇ 1000 0 C.
• the calculated theoretical density of this composition was 6.96 g/cm 3 and the measured density of the hot-pressed plate was 6.18 g/cm 3 .
• Resisttvity/room temperature deposition 1.36 x 10 "1 ⁇ -cm
• the temperature where densiftcation ceased was ⁇ 1000 °C.
• the calculated theoretical density of this composition was 6.93 g/cm 3 and the measured density of the hot-pressed plate was 6.49 g/cm 3 .
• Resistivity/room temperature deposition 1.71 x 10 "1 ⁇ -cm
• the temperature where densification ceased was 980 0 C.
• the caicuiated theoretical density of this composition was 6.93 g/cm 3 and the measured density of the hot-pressed plate was 6.24 g/cm 3 .
• Electrical conductivity of the target was 0.10 S/cm.
• Resistivity/room temperature deposition 2.22 x 10 ⁇ 1 ⁇ -cm
• SnO 2 -powder and TasO 5 -powder were mixed in the above-noted ratio by the Wet Method and hot-pressed as described.
• the temperature where densification ceased was 1000 0 C.
• the calculated theoretical density of this composition was 7.12 g/cm 3 and the measured density of the hot-pressed plate was 5.37 g/cm 3 .
• Thin film deposition Conditions of deposition on a glass substrate: The thin films were deposited with a 250 mJ laser pulse at 50 Hz with an oxygen pressure of
• EXAMPLE 8 95 mole% SnOg - 5 mote% NbQ 3 SnO 2 -powder and NbO 2 -powder were mixed in the above-noted ratio by the Wet Method and hot-pressed as described.
• the temperature where densification ceased was 880 0 C.
• the calculated theoretical density of this composition was 6.91 g/cm 3 and the measured density of the hot-pressed plate was 5.81 g/cm 3 .
• Electrical conductivity of the target was 1.8 x 10 "5 S/cm.
• Resistivity/room temperature deposition 4.00 x 10 "1 ⁇ -cm Transmittance/room temperature deposition: 79% Resistivity/200°C: 2.28 x 10 '2 ⁇ -cm Transmittance/200°C: 81.5%
• the temperature where densification ceased was 980°C.
• the calculated theoretical density of this composition was 6.93 g/cm 3 and the measured density of the hot-pressed plate was 6.24 g/cm 3 .
• Electrical conductivity of the target was 0.02 S/cm.
• Resistivity/room temperature deposition 1.9 x 10 "1 ⁇ -cm
• EXAMPLE 10 94.25 moJe% SnO? - 5 mole% MoO? - 0.75mole% Mo SnO 2 -powder, MoO ⁇ -powder and Mo powder were mixed in the above-noted ratio by the Wet Method and hot-pressed as described.
• the temperature where densification ceased was 980 0 C.
• the calculated theoretical density of this composition was 6.93 g/cm 3 and the measured density of the hot-pressed plate was 6.15 g/cm 3 .
• SnO 2 -powder and Mo-powder were mixed in the above-noted ratio by the Wet Method and hot-pressed as described.
• the temperature where densification ceased was 980 0 C.
• the calculated theoretical density of this composition was 6.99 g/cm 3 and the measured density of the hot-pressed plate was 5.77 g/cm 3 .
• Electrical conductivity of the target was 0.05 S/cm.
• Thin film deposition Conditions of deposition on a glass substrate: The thin films were deposited with a 250 mJ laser pulse at 50 Hz with an oxygen pressure of
• Resistivity/room temperature deposition 2.74 x 10 '1 ⁇ -cm
• the temperature where densification ceased was 800 0 C.
• the calculated theoretical density of this composition was 7.7 g/cm 3 and the measured density of the hot-pressed plate was 6.69 g/cm 3 .
• SnO 2 -powder and Mo-powder were mixed in the above-noted ratio by the Dry Method and hot-pressed as described.
• the temperature where densification ceased was 980 0 C.
• the calculated theoretical density of this composition was 6.94 g/cm 3 and the measured density of the hot-pressed plate was 5.58 g/cm 3 .
• Thin Film Deposition Conditions of deposition on glass substrate: The thin films were deposited with a 250 mJ laser pulse at 50 Hz with an oxygen pressure of 10mTorr and for a period of 29 seconds.
• the temperature where densification ceased was 900 0 C.
• the calculated theoretical density of this composition was 6.92 g/cm 3 and the measured density of the hot-pressed plate was 6.52 g/cm 3 .
• the thin films were deposited with a 250 mJ laser pulse at 50 Hz with an oxygen pressure of IOmTorr and for a period of 33 seconds.
• Resistivity/room temperature deposition 7.96 x 10 1 ⁇ -cm

Landscapes

• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Materials Engineering (AREA)
• Organic Chemistry (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Mechanical Engineering (AREA)
• Metallurgy (AREA)
• Ceramic Engineering (AREA)
• General Chemical & Material Sciences (AREA)
• Geochemistry & Mineralogy (AREA)
• Manufacturing & Machinery (AREA)
• Life Sciences & Earth Sciences (AREA)
• Structural Engineering (AREA)
• Physical Vapour Deposition (AREA)
• Conductive Materials (AREA)
• Non-Insulated Conductors (AREA)
• Compositions Of Oxide Ceramics (AREA)
• Coating By Spraying Or Casting (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=39329023

Family Applications (1)

Country Status (6)

Families Citing this family (5)

Family Cites Families (33)

• 2006
  • 2006-10-31 US US11/590,179 patent/US7452488B2/en active Active
• 2007
  • 2007-10-31 KR KR1020097009542A patent/KR20090082210A/ko not_active Withdrawn
  • 2007-10-31 RU RU2009120398/03A patent/RU2009120398A/ru unknown
  • 2007-10-31 JP JP2009535440A patent/JP2010508443A/ja active Pending
  • 2007-10-31 WO PCT/US2007/083160 patent/WO2008055201A2/en not_active Ceased
  • 2007-10-31 EP EP07868630A patent/EP2086906A2/de not_active Withdrawn
• 2008
  • 2008-11-11 US US12/268,713 patent/US7850876B2/en not_active Expired - Fee Related

Non-Patent Citations (1)

Also Published As

Similar Documents

Legal Events