EP2061630A2 - Document de sécurité et / ou de valeur pourvu d'un système de contact à semi-conducteur de type ii - Google Patents

Document de sécurité et / ou de valeur pourvu d'un système de contact à semi-conducteur de type ii

Info

Publication number
EP2061630A2
EP2061630A2 EP07801331A EP07801331A EP2061630A2 EP 2061630 A2 EP2061630 A2 EP 2061630A2 EP 07801331 A EP07801331 A EP 07801331A EP 07801331 A EP07801331 A EP 07801331A EP 2061630 A2 EP2061630 A2 EP 2061630A2
Authority
EP
European Patent Office
Prior art keywords
semiconductor
security
value document
layer
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP07801331A
Other languages
German (de)
English (en)
Other versions
EP2061630B1 (fr
Inventor
Malte Pflughoefft
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bundesdruckerei GmbH
Original Assignee
Bundesdruckerei GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bundesdruckerei GmbH filed Critical Bundesdruckerei GmbH
Priority to SI200731280T priority Critical patent/SI2061630T1/sl
Publication of EP2061630A2 publication Critical patent/EP2061630A2/fr
Application granted granted Critical
Publication of EP2061630B1 publication Critical patent/EP2061630B1/fr
Priority to CY20131100483T priority patent/CY1114056T1/el
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B42D25/30—Identification or security features, e.g. for preventing forgery
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B42D25/20—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof characterised by a particular use or purpose
    • B42D25/29—Securities; Bank notes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B42D25/30—Identification or security features, e.g. for preventing forgery
    • B42D25/36—Identification or security features, e.g. for preventing forgery comprising special materials
    • B42D2033/46—

Definitions

  • the invention relates to a security and / or value document with a security feature, an ink for producing the security feature, a method for producing such a security and / or
  • Value document as well as a method for verifying such a security and / or value document.
  • Luminescent substances are those substances which fluoresce or phosphoresce upon excitation with light of sufficient energy, for example UV. These are energetic transition processes at the molecular or atomic level whose transition dipole moment is not zero (fluorescence) or zero (phosphorescence). The wavelengths or energies of the fluorescence or the phosphorescence are specific for the respective substances, since they correspond to the difference of the energy levels of the two states, between which one
  • Security feature for example, held under a UV light source, it lights up and can be seen by direct inspection.
  • Fluorescent inks or inks are very common in the trade and easy to obtain. Therefore, it is easy for unauthorized persons to obtain a suitable fluorescent ink and thus produce fake security and / or value documents with a fluorescent security feature.
  • 5,841,151 discloses various group II semiconductor contacts based on InAs x Py and In p Ga q As x P y , the two materials mentioned being in direct contact with one another and with x and y on the one hand and p and q on the other hand always being ., to 1.
  • this reference also effects on the wave functions of holes and electrons are described, which are associated with the application of a potential to the contact.
  • Further similar contacts from two different group III / V semiconductors are for example from the
  • Value document with a luminescent security feature to provide which provides further security against counterfeiting and improved detectability of counterfeits while continuing to produce the security and / or value document.
  • the invention is therefore based on the technical problem of specifying a security and / or value document which has a luminescent security feature which has an increased security against forgery.
  • the invention teaches a security and / or value document containing a security feature with a semiconductor subregion comprising at least a first semiconductor layer and a second semiconductor layer, which are contacted with each other and form a type II semiconductor contact system.
  • Type II semiconductor contacts exhibit luminescence due to the particular physics of the relationships, the decay time of which, by suitable selection and calculation of the materials, is in ranges between those of classical fluorescence and phosphorescence.
  • Type II semiconductor contacts are indeed in other technical Areas such as quantum well structures for laser diodes, quite common, but the decay time of the luminescence plays at most a minor role.
  • a security and / or value document according to the invention can still be verified by simple inspection, but additionally by measuring the decay time of the luminescence it contains a second inherent and hidden security feature that can be read out and verified , It is a covert security feature, since the decay time is determinable only by apparatus and can not be recognized by visual inspection. If a cooldown measured on a security and / or value document to be examined does not correspond to a reference cooldown for the true security feature, the security and / or value document being examined may be recognized as a forgery and discarded or confiscated, regardless of the identifiable and, if applicable, measurable wavelength of fluorescence or luminescence.
  • Type II semiconductor contacts are not readily available commercially, especially as a counterfeiter would also have to make a suitable selection or calculation of the semiconductor materials, which is simple and familiar to a person skilled in the solid state physics, but does not belong to the basic knowledge in counterfeiting circles. Finally, the production of type II semiconductor contacts is costly if the equipment required for this purpose, including operating personnel, is not readily available.
  • a security feature according to the invention will generally be designed such that the semiconductor subregion or the semiconductor subregions form a pattern. Such a pattern may be a similar pattern for different security and / or value documents. Then, the pattern is suitable for verification of one type of security and / or valuable document.
  • Examples of such document type-specific lateral patterns are: seals, coats of arms, regular or irregular surface patterns, such as line coats or guilloches, ID and 2D barcodes.
  • This may be visible or non-visible under normal light patterns, the non-visible patterns differ from the visible patterns in that the non-visible pattern only by means of technical aids, such as UV source visible.
  • the pattern can also be an individual pattern for different security and / or value documents (of the same document type), which pattern is coded in particular for identification information of the security and / or value document.
  • the following (pattern-coded) data can be used: alphanumeric character strings, such as personal data records, parts of personal data records, such as names, first names, address,
  • Date of birth, place of birth, and / or document data parts of document data such as serial number, issuing authority, issue date, expiration date, and other data, in particular digital data, public key (in the case of a readable chip document or for access to centralized or decentralized databases) and / or checksums, and biometric data such as a photo, fingerprint, venous pattern of, for example, the hand or finger, iris and / or retina.
  • It is preferably a character string that uniquely identifies the document and / or the document carrier.
  • this string can also be a string not otherwise shown in the document.
  • value and / or security document includes in the context of the invention in particular identity cards, passports, ID cards, access control cards, visas, tax stamps, tickets, driver's licenses, motor vehicle papers, banknotes, checks, postage stamps, credit cards, any smart cards and adhesive labels (eg product assurance).
  • security and / or value documents typically have a substrate, a printing layer and optionally a transparent cover layer.
  • a substrate is a support structure to which the print layer is applied with information, images, patterns, and the like. Suitable materials for a substrate are all customary materials based on paper and / or plastic in question.
  • the physical relationships of the invention are shown below.
  • the coefficients of spontaneous emission (A) and induced absorption (B) are related according to Einstein:
  • ⁇ Ea is the transition dipole moment of the considered transition, which is given as:
  • ⁇ is the respective wave function of the ground state A and of the excited state E
  • r is the spatial coordinate
  • d ⁇ is the time differential
  • int * stands for the integral sign.
  • the Einstein coefficient of spontaneous emission is thus proportional to the square of the overlap integral. If one applies this knowledge to semiconductor contacts made of different semiconductors, then the relationships shown with reference to FIGS. 1a and 1b result.
  • Figure la shows a type I contact between semiconductor materials A and B, where the abscissa is a spatial coordinate and the ordinate is the energy.
  • the solid lines show the courses of the conduction band (CB, conduction band) and the valence band (VB, valence band).
  • Semiconductor material B, the conduction band and the valence band are each energy-shifted with different signs to the conduction band and the valence band of the semiconductor material of the semiconductor material A.
  • the band gap is the smallest in the region of the semiconductor B.
  • the wave functions ⁇ (dashed lines) have an extreme value in the region of the semiconductor material B, that is, close to each other, so that the overlap integral is maximal.
  • Figure Ib shows a type II contact between semiconductor materials "A and B in an analog representation.
  • the semiconductor material B are here the conduction band and the valence band, respectively with same sign with respect to the conduction band and the valence band of the semiconductor material of the Semiconductor material A energy shifted.
  • the extreme values of the wave functions ⁇ are spatially separated, namely on the one hand in the semiconductor material A (GS) and on the other hand in the semiconductor material B (ES), which corresponds to type II
  • Semiconductor contacts is characteristic. Due to the spatial distance of the wavefunction extrema, there is a lower probability of spontaneous emission with the immediate consequence of the extension of the luminescence decay time compared to the type I contact semiconductor system.
  • these relationships can be further enhanced by arranging a separating layer C between the semiconductor materials A and B.
  • the energy of its conduction band is closer to the conduction band of the semiconductor material A and the energy of its valence band closer to the valence band of the semiconductor material B.
  • the extreme values of the wave functions ⁇ are arranged further apart from each other so that there is a further reduction in the probability of spontaneous emission and, consequently, a further extension of the decay time.
  • a measured decay time is highly specific for the semiconductor material used for a security feature.
  • the term of the semiconductor subregion denotes a subregion of a security and / or value document according to the invention, which is formed by a type II semiconductor contact.
  • the security and / or value document may be a macroscopic structure, for example of the order of magnitude of 1 mm 2 and more.
  • microscopic structures, in particular microparticles or nanoparticles act as subarea, as described elsewhere.
  • Such a semiconductor subregion of a security and / or value document according to the invention can be produced by A) optionally growing epitaxially on a substrate a first barrier layer B) preferably a first semiconductor layer of a first semiconductor material is epitaxially grown on the barrier layer, C ) optionally on the first semiconductor layer, a separating layer of a release layer semiconductor material preferably
  • a second semiconductor layer of a second semiconductor material is grown preferably epitaxially, E) optionally on the second semiconductor layer, a second
  • step F) optionally the layer structure obtained in steps A) to E) are divided into particles to obtain the layer structure by division in directions perpendicular to the planes of the layer structure, wherein the
  • first semiconductor material and the second semiconductor material are selected with the proviso and doped if necessary, that the valence band and the conduction band of the second semiconductor material with respect to the valence band and the conduction band of the first semiconductor material in each case with
  • the separation layer semiconductor material has a conduction band, which is energetically closer to the conduction band of the first semiconductor material, and a valence band, which is energetically closer to the valence band of the second
  • Semiconductor material is, or vice versa.
  • the production of the layers, in particular the epitaxial layers can be carried out in the usual way.
  • MBE Molecular Beam Epitaxy
  • MOVPE Metal-Organic Vapor Phase Epitaxy
  • these methods with the equipment to be used, substances to be used, as well as Abscheidungs gs slaughter according to the composition of a desired semiconductor layer are well known to those skilled in semiconductor technology and need not be further explained here.
  • one or more of the semiconductor layers, for example the barrier layers may be doped.
  • an n-doped semiconductor is a semiconductor in which the electrical conduction takes place via electrons on the basis of donor atoms with excess valence electrons.
  • nitrogen, phosphorus, arsenic and antimony are suitable for the n-doping of silicon.
  • n-doping of GaP or (AlGa) P semiconductors for example, silicon and tellurium are suitable.
  • acceptors include boron, aluminum, gallium and indium.
  • GaP or (AlGa) P acceptors such as magnesium, zinc or carbon are possible.
  • particles according to the invention can be synthesized in solution according to the abovementioned references.
  • the term of a contact between the first semiconductor layer and the second semiconductor layer designates the planar connection of such layers either directly or with the interposition of a separating layer or a plurality of directly connected to each other Separating layers of different Trenn fürleiter- materials.
  • the layer thicknesses of the first and second semiconductor layers and optionally of the barrier layers are not critical and can be in the range of 0.1 nm to 1 mm, but are preferably between 5 nm and 10 ⁇ m.
  • the layer thickness of the separating layer or the sum of the thicknesses of a plurality of separating layers is rather small and should be in the range from 0.1 to 100 nm, preferably in the range from 0.5 to 50 nm, in particular in the range from 0.5 to 20 nm, lie.
  • the semiconductor subregion can be formed in various ways.
  • semiconductor subregions are formed as semiconductor particles, which are arranged in the security and / or value document or on its surface.
  • the particles are not electrically contacted in the simplest version, electroluminescence can not take place.
  • This can be done by incorporation into a substrate, for example made of paper or plastic, in a printing layer applied to the substrate, for example in the context of an ink, and / or in a covering layer on the printing layer, for example of a transparent plastic.
  • a multiplicity of semiconductor particles are set up in a printing ink applied or applied in or on the security and / or value document. are mixed, since then the entire production process differs from conventional production processes only in that an ink added to the semiconductor particles according to the invention is processed.
  • This variant of the invention can be used in virtually all relevant security and / or value documents.
  • a more technologically complex variant is characterized in that the semiconductor subregion comprises electrical contacts which, on the one hand, are connected to the first
  • the electrical contacts are each electrically connected to electrical contact pads which are mounted in the area of the surface of the security and / or value document. This can be done by applying a potential, the modulation of the cooldown described above. This variant will be especially recommended for security and / or value documents, which in any case contain a contact field, for example for a chip, such as smart cards, ID cards, passports and the like.
  • a contact field for example for a chip, such as smart cards, ID cards, passports and the like.
  • the electrical contacts and conductive layers, which form a capacitor be set up, including in detail the following
  • the contact fields are typically not intended to excite electroluminescence or electroluminescence does not occur when a potential difference is applied.
  • a semiconductor subregion typically used in the context of the invention has a luminescence decay time of 1 to 100,000 ns, preferably of 10 to 10,000 ns. The cooldown is the time between the
  • the cooldown may also be the time of the fall to 1/10 of the initial intensity; both values differ by a factor of about 2.3.
  • the decay time can either be measured selectively for a defined wavelength, or non-wavelength selective.
  • the first semiconductor layer and the second semiconductor layer can in principle be formed of any desired semiconductor materials, optionally doped, the selection and composition taking place with the proviso that a type II semiconductor contact is produced. Particularly suitable are all type II
  • the invention further relates to an ink for
  • the other ingredients of the present inks are consistent with the ingredients of prior art inks and typically include the usual other components of paints or inks, such as binders, penetrants, modifiers, biocides, surfactants, buffers, solvents (water and / or organic solvents), fillers, pigments, dyes, effect pigments, anti-foaming agents, anti-settling agents, UV stabilizers, etc.
  • suitable color and ink formulations for various printing processes are well known to those of ordinary skill in the art and particles used in this invention will be substituted or additional added to conventional dyes or pigments.
  • the proportion of the particles in the ink may range from 0.01 to 50% by weight, preferably from 0.01 to 10% by weight, most preferably from 0.1 to 2% by weight, based on the Total weight of the ink, amount.
  • the particles may have a maximum spatial extent of 0.001 to 100 .mu.m, preferably of 0.01 to 20 .mu.m, in the case of inkjet inks of 0.001 to 0.1 .mu.m or 1 .mu.m.
  • the maximum spatial extent denotes the length of that straight connection between two points of the surface of a particle that is responsible for the particle. is maximum.
  • the methods of gravure, high, plate, and through-pressure well known to those skilled in the art are suitable.
  • gravure printing, gravure printing, flexographic printing, letter set, offset or screen printing are suitable.
  • digital printing methods such as thermal transfer printing, inkjet printing or thermal sublimation printing are suitable.
  • the invention further relates to a method for producing a security and / or value document according to the invention, wherein a semiconductor subregion, which comprises at least a first semiconductor layer and a second semiconductor layer, which form a type II semiconductor contact system, into a substrate of the security and / or value document is introduced or applied to the surface, and wherein the first semiconductor layer is electrically contacted with a first electrical contact pad and wherein the second semiconductor layer is electrically contacted with a second electrical contact pad.
  • the substrate of the security and / or value document is printed with an ink according to the invention.
  • Semiconductor layer and the second semiconductor layer may be alternatively carried out so that instead of a.
  • Semiconductor layers are located and consequently corresponding fields arise at the interface between the semiconductor layers.
  • the invention further relates to a method for verifying a security and / or value document according to the invention, wherein the security and / or value document is irradiated with light radiation whose energy is sufficient to excite the luminescence of the semiconductor subregion, wherein the decay time of the excited luminescence is measured and is compared with a first cooldown reference value. Measurements of the decay time can be carried out with customary devices, for which reference is made merely by way of example to the exemplary embodiments.
  • a defined potential difference is applied to the first electrical contact field and the second electrical contact field, the security and / or value document being irradiated with light radiation whose Energy is sufficient to excite the luminescence of the semiconductor subregion, and wherein the decay time of the excited luminescence is measured and compared with a second decay duration reference value.
  • Suitable potential differences are those in the region of the contact field strengths in the range of 0.1 to 100,000 or 10,000 kV / cm, preferably 5 to 200 kV / cm produce.
  • the decay time of the excited luminescence can be measured without applying a potential difference, comparing the difference of the measured decay times without and with the application of the potential with a decay time difference reference value.
  • the potential difference to be applied is defined and its value is the security feature and possibly the
  • the measurement of the decay time can be at different
  • the excitation of the luminescence can in the context of the invention not only with a radiation whose energy is equal to or greater than the energy difference of the two Luminszenzzucons done, but also with a radiation whose energy is lower than this
  • Example 1 a type II semiconductor contact used according to the invention
  • a first semiconductor layer A is formed of InAso.43Po.57 in a thickness of 9.0 * nm (stoichiometric indices of group III and group V elements add to each 1). It is a layer for electrons.
  • the band energy of the conduction band is -8.295 eV.
  • the band energy for heavy holes in the valence band is -9.220 eV.
  • the band energy for light holes in the valence band is - 9.307 eV.
  • a second semiconductor layer is formed of Ino.53 Gaao.47Aso.71Po.29 in a thickness of 12.0 nm. It is a layer for holes.
  • the band energy of the conduction band is -8.169 eV.
  • the band energy for heavy holes is -9.178 eV.
  • the band energy for light holes is -9.105 eV.
  • barrier layers of InO .73 GaO .27 AsO .49 P 0.51 are provided with a thickness of 30 nm.
  • Conduction band is -8.173 eV.
  • the band energy for heavy Holes is -9.228 eV.
  • the band energy for light holes is -9.206 eV.
  • FIG. 2 shows a schematic representation of the normalized wave functions ⁇ . It can be seen that the respective maxima are spatially separated, which leads to a prolonged cooldown compared to luminescence in type I contacts.
  • Example 2 Change in the decay time by applying a potential to the type II contact from example 1
  • FIG. 3 shows the normalized wave functions ⁇ resulting from the application of potentials in fields in the contact region of -100 kV / cm (a), -50 kV / cm (b), +50 kV / cm (c) and +100 kV / cm (d). It can be seen that the spatial separation of the maxima with the field strength and thus with the applied
  • Cooldowns are variable and controllable.
  • a defined field strength or potential difference can be assigned a specific shift in the cooldown.
  • the luminescence decay times in a type II contact system are investigated from undoped GaAs and AlAS (without separation layer).
  • X 2 excitons are excited with a YAG: Nd pulse laser of a wavelength of 532 nm with a pulse duration of 15 ⁇ s.
  • X xy excitons are excited with an N 2 laser of a wavelength of 337 nm and a pulse duration of 0.15 ⁇ s.
  • the luminescence is measured by means of a Doppelgittermonochromators with a photomultipier as a detector.
  • the cooldown measurements or lifetime measurements are carried out by means of the time-correlated single-photon counting technique.
  • the intensity of the luminescence due to the X 2 excitons decreases within about 5.5 ⁇ s to 1/10 of the initial intensity.
  • the intensity of the X xy excitons decreases within about 950 ⁇ s to 1/10 of the initial intensity.
  • the cooldowns can be measured by applying a potential between the GaAs and the AlAs layer, and then increasing or decreasing
  • the following components are mixed together and homogenized: 20.0% by weight of Cartasol Red K-3B liquid, 40.6% by weight of lactic acid (80%), 19.6% by weight of ethanediol (ethylene glycol), 1.6% by weight of water, 16 , 7 wt .-% ethylene glycol monobutyl ether, 0.2 wt .-% Parmetol A26, 1.3 wt .-% sodium lactate solution (50%).
  • the total content of water considering the water introduced with the cartasol is 30% by weight based on the total amount of ink.
  • the use of cartasol also contains 1% by weight of acetic acid, based on the total amount of ink.
  • the conventional ink thus prepared becomes 0.1
  • Wt .-% based on the total amount of ink, of particles of a maximum spatial extent of 0.1 .mu.m mixed with a type II semiconductor contact according to Example 1 and the ink is homogenized.
  • Example 5 Verification of a security and / or value document according to the invention
  • a security and / or value document having a security feature with semiconductor subregions according to the invention for example as particles in the context of printing with an ink according to Example 4, is irradiated with UV excitation radiation and subjected to a cooldown measurement analogously to Example 3.
  • the measured cooldown is compared to a reference cooldown previously measured on a reference security feature.
  • a difference of the measured decay time to the Reference decay time beyond a defined allowable deviation window (which is essentially determined by the apparatus measurement error tolerances)
  • the security and / or value document is qualified as forged and confiscated.
  • Example 5 a comparison of the no-voltage cooldown with the reference cooldown in Example 5 is performed. Then the decay times of both measurements are subtracted from each other and the resulting difference in measured decay times is compared with a reference difference analogous to the above comparison.

Landscapes

  • Business, Economics & Management (AREA)
  • Accounting & Taxation (AREA)
  • Finance (AREA)
  • Credit Cards Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Element Separation (AREA)

Abstract

Document de sécurité et / ou de valeur contenant une caractéristique de sécurité pourvue d'une zone partielle à semi-conducteur qui comprend une première couche de semi-conducteur et une seconde couche de semi-conducteur se trouvant en contact l'une avec l'autre et formant un système de contact à semi-conducteur du type II.
EP07801331.5A 2006-09-08 2007-09-05 Document de sécurité et / ou de valeur pourvu d'un système de contact à semi-conducteur de type ii Active EP2061630B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
SI200731280T SI2061630T1 (sl) 2006-09-08 2007-09-05 Varnostni ali vrednostni dokument s polprevodniškim kontaktnim sistemom tipa II
CY20131100483T CY1114056T1 (el) 2006-09-08 2013-06-14 Εγγραφο ασφαλειας και/ή αξιας με ενα συστημα επαφης ημιαγωγων τυπου ιι

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006043119A DE102006043119A1 (de) 2006-09-08 2006-09-08 Sicherheits- und/oder Wertdokument mit einem Typ II Halbleiterkontaktsystem
PCT/DE2007/001596 WO2008028477A2 (fr) 2006-09-08 2007-09-05 Document de sécurité et / ou de valeur pourvu d'un système de contact à semi-conducteur de type ii

Publications (2)

Publication Number Publication Date
EP2061630A2 true EP2061630A2 (fr) 2009-05-27
EP2061630B1 EP2061630B1 (fr) 2013-04-24

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EP07801331.5A Active EP2061630B1 (fr) 2006-09-08 2007-09-05 Document de sécurité et / ou de valeur pourvu d'un système de contact à semi-conducteur de type ii

Country Status (10)

Country Link
US (1) US9399365B2 (fr)
EP (1) EP2061630B1 (fr)
CN (1) CN101511601B (fr)
CY (1) CY1114056T1 (fr)
DE (1) DE102006043119A1 (fr)
ES (1) ES2410808T3 (fr)
PT (1) PT2061630E (fr)
RU (1) RU2430837C2 (fr)
SI (1) SI2061630T1 (fr)
WO (1) WO2008028477A2 (fr)

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Publication number Priority date Publication date Assignee Title
US10173454B2 (en) * 2009-02-17 2019-01-08 Bundesdruckerei Gmbh Security and/or value document having a type II semiconductor contact system
US8503539B2 (en) * 2010-02-26 2013-08-06 Bao Tran High definition personal computer (PC) cam
EP2727739A1 (fr) * 2012-11-01 2014-05-07 Trüb AG Corps de carte avec couches de film modifiables
JP6337449B2 (ja) * 2013-11-27 2018-06-06 株式会社リコー 会議サーバ装置、プログラム、情報処理方法、及び会議システム
DE102013225518B4 (de) * 2013-12-10 2018-05-03 Bundesdruckerei Gmbh Sicherheitselement mit UV-anregbarem feldabhängigem Effekt

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EP2061630B1 (fr) 2013-04-24
CN101511601A (zh) 2009-08-19
ES2410808T3 (es) 2013-07-03
SI2061630T1 (sl) 2013-09-30
DE102006043119A1 (de) 2008-03-27
CN101511601B (zh) 2012-05-23
WO2008028477A2 (fr) 2008-03-13
RU2430837C2 (ru) 2011-10-10
US9399365B2 (en) 2016-07-26
CY1114056T1 (el) 2016-07-27
WO2008028477A3 (fr) 2008-06-26
RU2009112730A (ru) 2010-10-20
US20110006667A1 (en) 2011-01-13
PT2061630E (pt) 2013-05-10

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