EP2061630B1 - Document de sécurité et / ou de valeur pourvu d'un système de contact à semi-conducteur de type ii - Google Patents

Document de sécurité et / ou de valeur pourvu d'un système de contact à semi-conducteur de type ii Download PDF

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Publication number
EP2061630B1
EP2061630B1 EP07801331.5A EP07801331A EP2061630B1 EP 2061630 B1 EP2061630 B1 EP 2061630B1 EP 07801331 A EP07801331 A EP 07801331A EP 2061630 B1 EP2061630 B1 EP 2061630B1
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EP
European Patent Office
Prior art keywords
semiconductor
security
valuable document
layer
electrical contact
Prior art date
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EP07801331.5A
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German (de)
English (en)
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EP2061630A2 (fr
Inventor
Malte Pflughoefft
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Bundesdruckerei GmbH
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Bundesdruckerei GmbH
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Priority to SI200731280T priority Critical patent/SI2061630T1/sl
Publication of EP2061630A2 publication Critical patent/EP2061630A2/fr
Application granted granted Critical
Publication of EP2061630B1 publication Critical patent/EP2061630B1/fr
Priority to CY20131100483T priority patent/CY1114056T1/el
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B42D25/30—Identification or security features, e.g. for preventing forgery
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B42D25/20—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof characterised by a particular use or purpose
    • B42D25/29—Securities; Bank notes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D25/00—Information-bearing cards or sheet-like structures characterised by identification or security features; Manufacture thereof
    • B42D25/30—Identification or security features, e.g. for preventing forgery
    • B42D25/36—Identification or security features, e.g. for preventing forgery comprising special materials
    • B42D2033/46—

Definitions

  • the invention relates to a security and / or value document with a security feature, an ink for producing the security feature, a method for producing such a security and / or value document, and a method for verifying such a security and / or value document.
  • Luminescent substances are those substances which fluoresce or phosphoresce upon excitation with light of sufficient energy, for example UV. These are energy transfer processes at the molecular or atomic level whose transition dipole moment is not zero (fluorescence) or zero (phosphorescence). The wavelengths or energies of the fluorescence or the phosphorescence are specific for the respective substances, since they correspond to the difference of the energy levels of the two states between which there is a relaxation from the excited state, and lie mostly in the visible range.
  • Fluorescence typically shows a decay time of 10 ns and less, since it is a dipole-allowed transition (transition dipole moment not equal to zero), while phosphorescence typically has settling times in the range from 1,000 ⁇ s to several hours, since these are dipole-forbidden transitions (transition dipole moment) equals zero).
  • Prohibited transitions have a comparatively low transition probability, resulting in comparatively slow transitions.
  • the physical background of this behavior is for example the reference PW Atkins, Physical Chemistry, 2nd Edition, VCH, Weinheim, New York, Basel, Cambridge, Tokyo, 1996, pages 563 et seq. , detailed.
  • security features with fluorescent substances have the advantage that with the simplest means a review is possible, in addition to very cost-effective production. If such a security feature, for example, held under a UV light source, it lights up and can be seen by direct inspection.
  • WO02 / 53677 discloses an ink for security documents with fluorescent semiconductor nanocrystals.
  • the invention is therefore based on the technical problem of specifying a security and / or value document which has a luminescent security feature which has an increased security against forgery.
  • the invention teaches a security and / or value document containing a security feature with a semiconductor subregion, which comprises at least a first semiconductor layer and a second semiconductor layer, which are contacted with each other and form a type II semiconductor contact system.
  • Type II semiconductor contacts exhibit luminescence due to the particular physics of the relationships, the decay time of which, by suitable selection and calculation of the materials, is in ranges between those of classical fluorescence and phosphorescence.
  • Type II semiconductor contacts are indeed in other technical Areas such as quantum well structures for laser diodes, quite common, but the decay time of the luminescence plays at most a minor role.
  • a security and / or value document according to the invention can still be verified by simple inspection, but additionally by measuring the decay time of the luminescence, it contains a second inherent and hidden security feature that can be read out and verified , It is a hidden security feature, since the decay time is determinable only by equipment and can not be recognized by visual inspection. If a cooldown measured on a security and / or value document to be examined does not correspond to a reference cooldown for the true security feature, the security and / or value document being examined may be recognized as a forgery and discarded or confiscated, regardless of the identifiable and, if applicable, measurable wavelength of fluorescence or luminescence.
  • Type II semiconductor contacts are not readily available commercially, especially as a counterfeiter would also have to make a suitable selection or calculation of the semiconductor materials, which is simple and familiar to a person skilled in the solid state physics, but does not belong to the basic knowledge in counterfeiting circles. Finally, the production of type II semiconductor contacts is costly if the equipment required for this purpose, including operating personnel, is not readily available.
  • a security feature according to the invention will generally be designed such that the semiconductor subregion or the semiconductor subregions form a pattern.
  • a pattern may be a similar pattern for different security and / or value documents. Then, the pattern is suitable for verification of one type of security and / or valuable document. Examples of such document type-specific lateral patterns are: seals, coats of arms, regular or irregular surface patterns, such as line coats or guilloches, 1D and 2D barcodes. This may be visible or non-visible under normal light patterns, the non-visible patterns differ from the visible patterns in that the non-visible pattern only by means of technical aids, such as UV source visible.
  • the pattern can also be an individual pattern for different security and / or value documents (of the same document type), which pattern is coded in particular for identification information of the security and / or value document.
  • the following (pattern coded) data may be used: alphanumeric strings, such as personal records, parts of personal records, such as names, first names, address, date of birth, place of birth, and / or document data, pieces of document data, such as serial number, issuing office, Date of issue, expiry date, and other data, in particular digital data, public key (in the case of a document with a read-out chip or for access to centralized or decentralized databases) and / or checksums; and biometric data such as a photo, fingerprint, venous pattern of, for example, the hand or finger, iris and / or retina.
  • this string can also be a string not otherwise shown in the document. It is also possible to provide a plurality of patterns which can overlap each other (laterally) and yet can be read out separately, whether by the detected luminescence wavelength or by the measured decay time. Of course, it is also possible to provide a plurality of patterns which do not overlap each other (laterally). In both cases, in particular combinations of document type-specific patterns and individual patterns are possible and preferred.
  • value and / or security document includes in the context of the invention in particular identity cards, passports, ID cards, access control cards, visas, tax stamps, tickets, driver's licenses, motor vehicle papers, banknotes, checks, postage stamps, credit cards, any smart cards and adhesive labels (eg product assurance).
  • security and / or value documents typically have a substrate, a printing layer and optionally a transparent cover layer.
  • a substrate is a support structure to which the print layer is applied with information, images, patterns, and the like. Suitable materials for a substrate are all customary materials based on paper and / or plastic in question.
  • B ⁇ EA 2 / 6 ⁇ ⁇ 0 H / 2 ⁇ ⁇ 2
  • ⁇ is the respective wave function of the ground state A and of the excited state E
  • r is the spatial coordinate
  • d ⁇ is the time differential.
  • "int” stands for the integral sign.
  • FIG. 1a shows a type I contact between semiconductor materials A and B, where the abscissa is a spatial coordinate and the ordinate is the energy.
  • the solid lines show the courses of the conduction band (CB, conduction band) and the valence band (VB, valence band). It can be seen that in the semiconductor material B the conduction band and the valence band are each energy-shifted with different signs in relation to the conduction band and the valence band of the semiconductor material of the semiconductor material A.
  • the band gap is the smallest in the region of the semiconductor B.
  • the wave functions ⁇ (dashed lines) have an extreme value in the region of the semiconductor material B, that is, close to each other, so that the overlap integral is maximal.
  • FIG. 1b shows a type II contact between semiconductor materials A and B in an analogous representation.
  • the semiconductor material B here are the conduction band and the valence band in each case with the same sign with respect to the conduction band and the valence band of the semiconductor material of Semiconductor material A energy shifted.
  • the extreme values of the wave functions ⁇ are spatially separated, namely on the one hand in the semiconductor material A (GS) and on the other hand in the semiconductor material B (ES), which is characteristic of type II semiconductor contacts. Due to the spatial distance of the wave function extrema, there is a lower probability of spontaneous emission with the immediate consequence of the extension of the luminescence decay time compared to the type I contact semiconductor system.
  • the decay time can be tailor-made according to defined specifications, namely by the choice of the respective band gaps of the two semiconductor materials or the spacings of the respective ones Valence bands and conduction bands to one another and / or by means of a separating layer and by varying the thickness thereof.
  • a measured decay time is highly specific for the semiconductor material used for a security feature.
  • the term of the semiconductor subregion denotes a subregion of a security and / or value document according to the invention, which is formed by a type II semiconductor contact.
  • the security and / or value document may be a macroscopic structure, for example of the order of magnitude of 1 mm 2 and more.
  • microscopic structures, in particular microparticles or nanoparticles act as subarea, as described elsewhere.
  • Such a semiconductor subregion of a security and / or value document according to the invention can be produced by A) preferably a first barrier layer being grown epitaxially on a substrate, B) a first semiconductor layer of a first semiconductor material is preferably epitaxially grown on the barrier layer, C) optionally D) on the first semiconductor layer or the separation layer, a second semiconductor layer of a second semiconductor material is preferably grown epitaxially, E) optionally on the second semiconductor layer, a second barrier layer is preferably grown epitaxially, on the first semiconductor layer is preferably grown epitaxially a separation layer of a separation semiconductor material, F)
  • the layer structure obtained in steps A) to E) are divided into particles while maintaining the layer structure by division in directions perpendicular to the planes of the layer structure, w obei the first semiconductor material and the second semiconductor material are selected with the proviso and doped if necessary, that the valence band and the conduction band of the second semiconductor material with respect to the valence band and the conduction band of the
  • the layers in particular the epitaxial layers can be carried out in the usual way.
  • MBE Molecular Beam Epitaxy
  • MOVPE Metal-Organic Vapor Phase Epitaxy
  • these methods with the equipment to be used, substances to be used, as well as deposition conditions according to the composition of a desired semiconductor layer are well known to those skilled in the semiconductor technology and need not be further explained here.
  • one or more of the semiconductor layers, for example the barrier layers may be doped.
  • an n-doped semiconductor is a semiconductor in which the electrical conduction takes place via electrons on the basis of donor atoms with excess valence electrons.
  • nitrogen, phosphorus, arsenic and antimony are suitable for the n-doping of silicon.
  • n-doping of GaP or (AlGa) P semiconductors for example, silicon and tellurium are suitable.
  • acceptors include boron, aluminum, gallium and indium.
  • GaP or (AlGa) P acceptors such as magnesium, zinc or carbon are possible.
  • particles according to the invention can be synthesized in solution according to the abovementioned references.
  • the term of a contact between the first semiconductor layer and the second semiconductor layer designates the planar connection of such layers either directly or with the interposition of a separating layer or a plurality of directly connected to each other Separating layers of different interface semiconductor materials.
  • the layer thicknesses of the first and second semiconductor layers and optionally of the barrier layers are not critical and may be in the range of 0.1 nm to 1 mm, but are preferably between 5 nm and 10 microns.
  • the layer thickness of the separating layer or the sum of the thicknesses of a plurality of separating layers is rather small and should be in the range from 0.1 to 100 nm, preferably in the range from 0.5 to 50 nm, in particular in the range from 0.5 to 20 nm, lie.
  • the semiconductor subregion can be formed in various ways.
  • semiconductor subregions are formed as semiconductor particles, which are arranged in the security and / or value document or on its surface.
  • the particles are not electrically contacted in the simplest embodiment, electroluminescence can not take place.
  • This can be done by incorporation into a substrate, for example made of paper or plastic, in a printing layer applied to the substrate, for example in the context of an ink, and / or in a covering layer on the printing layer, for example of a transparent plastic.
  • a multiplicity of semiconductor particles are set up in a printing ink applied or applied in or on the security and / or value document. are mixed, since then the entire production process differs from conventional production processes only in that an ink added to the semiconductor particles according to the invention is processed.
  • This variant of the invention can be used in virtually all relevant security and / or value documents.
  • a more technologically complex variant is characterized in that the semiconductor subregion comprises electrical contacts which are connected on the one hand to the first semiconductor layer and on the other hand to the second semiconductor layer, for example by means of the barrier layers, wherein the electrical contacts are in each case electrically connected to electrical contact fields which are in the range the surface of the security and / or value document are attached. This can be done by applying a potential, the modulation of the cooldown described above.
  • This variant will be especially recommended for security and / or value documents, which in any case contain a contact field, for example for a chip, such as smart cards, ID cards, passports and the like.
  • the electrical contacts and conductive layers, which form a capacitor be set up, for which reference is made in detail to the following statements.
  • the contact fields are typically not intended to excite electroluminescence or electroluminescence does not occur when a potential difference is applied.
  • a semiconductor subregion typically used in the context of the invention has a luminescence decay time of 1 to 100,000 ns, preferably of 10 to 10,000 ns. Decay time refers to the time elapsed between the initial intensity of the luminescence immediately after the end of the excitation and the decrease in the intensity of the luminescence to 1 / e of the initial intensity.
  • the cooldown may also be the time of the fall to 1/10 of the initial intensity; both values differ by a factor of about 2.3.
  • the cooldown can either be measured selectively for a defined wavelength, or non-wavelength selective.
  • the first semiconductor layer and the second semiconductor layer can in principle be formed of any desired semiconductor materials, optionally doped, the selection and composition taking place with the proviso that a type II semiconductor contact is produced.
  • Particularly suitable are all type II semiconductor contacts, which are known from the technological field of quantum well structures in many variants.
  • the layers of these contacts are usually formed of groups III / V or II / VI semiconductors.
  • groups III / V or II / VI semiconductors In addition to Ga, B, Al and In are also suitable as group III elements.
  • group V elements besides As also also also N, P and Sb come into question.
  • the invention further relates to an ink for printing a substrate of a security and / or value document containing particles with at least two semiconductor layers, which form a type II semiconductor contact system.
  • the other ingredients of the present invention are in accordance with the ingredients of prior art inks and typically include the usual other components of paints or inks, such as binders, penetrants, modifiers, biocides, surfactants, buffers, solvents (water and / or organic solvents), fillers, pigments, dyes, effect pigments, anti-foaming agents, anti-settling agents, UV stabilizers, etc.
  • Suitable color and ink formulations for various printing processes are well known to those of ordinary skill in the art and particles used in this invention will be substituted or additional added to conventional dyes or pigments.
  • the proportion of the particles in the ink may range from 0.01 to 50% by weight, preferably from 0.01 to 10% by weight, most preferably from 0.1 to 2% by weight, based on the Total weight of the ink, amount.
  • the particles may have a maximum spatial extent of 0.001 to 100 .mu.m, preferably of 0.01 to 20 .mu.m, in the case of inkjet inks of 0.001 to 0.1 .mu.m or 1 .mu.m.
  • the maximum spatial extent denotes the length of that straight joint between two points of the surface of a particle which is maximum for the particle.
  • the methods of gravure, high, flat, and through-printing which are well known to those skilled in the art are suitable.
  • intaglio, gravure, flexo, Letterset, offset or screen printing there are for example in question: intaglio, gravure, flexo, Letterset, offset or screen printing.
  • digital printing methods such as thermal transfer printing, ink jet printing or thermal sublimation printing are suitable.
  • the invention further relates to a method for producing a security and / or value document according to the invention, wherein a semiconductor subregion, which comprises at least a first semiconductor layer and a second semiconductor layer, which form a type II semiconductor contact system, into a substrate of the security and / or value document is introduced or applied to the surface, and wherein the first semiconductor layer is electrically contacted with a first electrical contact pad and wherein the second semiconductor layer is electrically contacted with a second electrical contact pad.
  • the substrate of the security and / or value document is printed with an ink according to the invention.
  • the invention can alternatively be embodied such that, instead of contacting the said semiconductor layers, they are arranged between two electrically conductive layers which are electrically insulated from the semiconductor layers. These electrically conductive layers are then contacted in each case with the electrical contact fields. As a result, a capacitor is created, in the field of which (when a potential difference and the two electrically conductive coatings are applied) the semiconductor layers are located and consequently corresponding fields are formed at the boundary layer between the semiconductor layers.
  • the invention further relates to a method for verifying a security and / or value document according to the invention, wherein the security and / or value document is irradiated with light radiation whose energy is sufficient to excite the luminescence of the semiconductor subregion, wherein the decay time of the excited luminescence is measured and is compared with a first cooldown reference value. Measurements of the decay time can be carried out with customary devices, for which reference is made merely by way of example to the exemplary embodiments.
  • a defined potential difference is applied to the first electrical contact field and the second electrical contact field, the security and / or value document being irradiated with light radiation whose Energy is sufficient to excite the luminescence of the semiconductor subregion, and wherein the decay time of the excited luminescence is measured and compared with a second decay duration reference value.
  • Suitable potential differences are those in the region of the contact field strengths in the range of 0.1 to 100,000 or 10,000 kV / cm, preferably 5 to 200 kV / cm produce.
  • the decay time of the excited luminescence can be measured without applying a potential difference, comparing the difference of the measured decay times without and with the application of the potential with a decay time difference reference value.
  • the potential difference to be applied is defined and its value is assigned to the security feature and possibly to the decay time difference reference value.
  • the measurement of the decay time can be repeated at different potential differences in order to increase the security of the verification.
  • the excitation of the luminescence can in the context of the invention not only with a radiation whose energy is equal to or greater than the energy difference of the two Luminszenzzucons done, but also with a radiation whose energy is lower than this energy difference. Then the suggestion can be or multi-photon excitation or upconversion in the usual way.
  • Example 1 a type II semiconductor contact used according to the invention
  • a first semiconductor layer A is formed of InAs 0.43 P 0.57 in a thickness of 9.0 mm (stoichiometric indices of group III and group V elements add to each 1). It is a layer for electrons.
  • the band energy of the conduction band is -8.295 eV.
  • the band energy for heavy holes in the valence band is -9.220 eV.
  • the band energy for light holes in the valence band is - 9.307 eV.
  • a second semiconductor layer is formed of In 0.53 Ga 0.47 As 0.71 P 0.29 in a thickness of 12.0 nm. It is a layer for holes.
  • the band energy of the conduction band is -8.169 eV.
  • the band energy for heavy holes is -9.178 eV.
  • the band energy for light holes is -9.105 eV.
  • barrier layers of In 0.73 Ga 0.27 As 0.49 P 0.51 are provided with a thickness of 30 nm.
  • the band energy of the conduction band is -8.173 eV.
  • the band energy for heavy Holes is -9.228 eV.
  • the band energy for light holes is -9.206 eV.
  • FIG. 2 shows a schematic representation of the normalized wave functions ⁇ . It can be seen that the respective maxima are spatially separated, which leads to a prolonged cooldown compared to luminescence in type I contacts.
  • Example 2 Change in the decay time by applying a potential to the type II contact from example 1
  • the normalized wave functions ⁇ are shown as they result from the application of potentials in fields in the contact range of -100 kV / cm (a), -50 kV / cm (b), +50 kV / cm (c) and +100 kV / cm (d). It can be seen that the spatial separation of the maxima with the field strength and thus with the applied potential varies and is controllable, with the result that the decay times can also be varied and controlled. A defined field strength or potential difference can be assigned a specific shift in the cooldown.
  • Example 3 Measurement of cooldowns on type II contact GaAs / AlAs
  • the luminescence decay times in a type II contact system are investigated from undoped GaAs and AlAs (without separation layer).
  • X z excitons are excited with a YAG: Nd pulse laser of a wavelength of 532 nm with a pulse duration of 15 ⁇ s.
  • X xy excitons are excited with an N 2 laser of a wavelength of 337 nm and a pulse duration of 0.15 ⁇ s.
  • the luminescence is measured by means of a Doppelgittermonochromators with a photomultipier as a detector.
  • the cooldown measurements or lifetime measurements are carried out by means of the time-correlated single-photon counting technique.
  • the intensity of the luminescence due to the X z excitons decreases within about 5.5 ⁇ s to 1/10 of the initial intensity.
  • the intensity of the X xy excitons decreases within about 950 ⁇ s to 1/10 of the initial intensity.
  • the decay times can be measured by applying a potential between the GaAs and the AlAs layer, and then an increase or decrease in the decay times, depending on the polarity and magnitude of the potential can be determined. Then it is also possible to determine the difference of the cooldowns with and without potential application.
  • the total content of water considering the water introduced with the cartasol is 30% by weight based on the total amount of ink.
  • the use of cartasol also contains 1% by weight of acetic acid, based on the total amount of ink.
  • the conventional ink prepared in this way is mixed with 0.1% by weight, based on the total amount of ink, of particles having a maximum spatial extent of 0.1 ⁇ m with a Type II semiconductor contact according to Example 1, and the ink is homogenized.
  • Example 5 Verification of a security and / or value document according to the invention
  • a security and / or valuable document having a security feature with semiconductor subregions according to the invention for example as particles in the context of printing with an ink according to Example 4, is irradiated with UV excitation radiation and subjected to a cooldown measurement analogously to Example 3.
  • the measured cooldown is compared to a reference cooldown previously measured on a reference security feature.
  • a difference of the measured decay time to the Reference decay time beyond a defined allowable deviation window (which is essentially determined by the apparatus measurement error tolerances)
  • the security and / or value document is qualified as forged and confiscated.
  • Example 5 a comparison of the no-voltage cooldown with the reference cooldown in Example 5 is performed. Then the decay times of both measurements are subtracted from each other and the resulting difference in measured decay times is compared with a reference difference analogous to the above comparison.

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  • Business, Economics & Management (AREA)
  • Accounting & Taxation (AREA)
  • Finance (AREA)
  • Credit Cards Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Element Separation (AREA)

Claims (15)

  1. Document de sécurité et/ou de valeur contenant une caractéristique de sécurité pourvue d'une zone partielle à semi-conducteur qui comprend au moins une première couche de semi-conducteur et une seconde couche de semi-conducteur se trouvant en contact l'une avec l'autre et formant un système de contact à semi-conducteur du type II.
  2. Document de sécurité et/ou de valeur selon la revendication 1, dans lequel la zone partielle à semi-conducteur peut être fabriquée par ce que
    A) une première couche barrière est crûe sur un substrat,
    B) une première couche de semi-conducteur en une première matière semi-conductrice est crûe sur la couche barrière,
    C) optionnellement une couche de séparation en une matière semi-conductrice d'une couche de séparation est crûe sur la première couche de semi-conducteur,
    D) une seconde couche de semi-conducteur en une seconde matière semi-conductrice est crûe sur la première couche de semi-conducteur ou la couche de séparation,
    dans lequel la première matière semi-conductrice et la seconde matière semi-conductrice sont choisies et si nécessaire dopées de telle façon que la bande de valence et la bande de conduction de la seconde matière semi-conductrice en comparaison à la bande de valence et la bande de conduction de la première matière semi-conductrice soient respectivement déplacées avec le même signe, et dans lequel la matière semi-conductrice de la couche de séparation comprend une bande de conduction étant plus proche de la bande de conduction de la première matière semi-conductrice, et comprend une bande de valence étant plus proche de la bande de valence de la seconde matière semi-conductrice, ou vice-versa.
  3. Document de sécurité et/ou de valeur selon une des revendications 1 ou 2, dans lequel la zone partielle à semi-conducteur est formée en tant qu'au moins une particule semi-conductrice qui est située dans le document de sécurité et/ou de valeur ou sur la surface de celui-ci.
  4. Document de sécurité et/ou de valeur selon la revendication 3, dans lequel une pluralité de particules semi-conductrices est prévue dans une encre d'impression appliquée dans ou sur le document de sécurité et/ou de valeur.
  5. Document de sécurité et/ou de valeur selon la revendication 1 ou 2, dans lequel la zone partielle à semi-conducteur comprend des contacts électriques qui sont liés d'un côté à la première couche de semi-conducteur et de l'autre côté à la seconde couche de semi-conducteur, les contacts électriques étant respectivement liés à des champs de contact électriques qui sont situés dans le domaine de la surface du document de sécurité et/ou de valeur.
  6. Document de sécurité et/ou de valeur selon la revendication 1 ou 2, dans lequel la zone partielle à semi-conducteur est située entre deux couches électriquement conductrices chacune comprenant un contact électrique, les contacts électriques étant respectivement liés à des champs de contact électriques qui sont situés dans le domaine de la surface du document de sécurité et/ou de valeur.
  7. Document de sécurité et/ou de valeur selon la revendication 1 ou 2, dans lequel la zone partielle à semi-conducteur est située entre deux champs de contact électriques qui sont situés dans le domaine de la surface du document de sécurité et/ou de valeur.
  8. Document de sécurité et/ou de valeur selon une des revendications 1 à 7, dans lequel la première couche de semi-conducteur et la seconde couche de semi-conducteur sont respectivement formées de semi-conducteurs des groupes III/V ou II/VI.
  9. Encre d'impression d'un substrat d'un document de sécurité et/ou de valeur contenant des particules avec au moins deux couches de semi-conducteur formant un système de contact à semi-conducteur du type II.
  10. Encre selon la revendication 9, dans laquelle les particules ont une étendue spatiale maximale comprise entre 0,001 et 100 µm, de préférence entre 0,01 et 20 µm.
  11. Procédé de fabrication d'un document de sécurité et/ou de valeur selon une des revendications 1 à 8, dans lequel une zone partielle à semi-conducteur comprenant au moins une première couche de semi-conducteur et une seconde couche de semi-conducteur qui forment un système de contact à semi-conducteur du type II, est introduite dans un substrat du document de sécurité et/ou de valeur ou appliquée sur la surface de celui-ci, et dans lequel la première couche de semi-conducteur est mise en contact électrique avec un premier champ de contact électrique et dans lequel la seconde couche de semi-conducteur est mise en contact électrique avec un second champ de contact électrique.
  12. Procédé de fabrication d'un document de sécurité et/ou de valeur selon une des revendications 1 à 8, dans lequel un substrat du document de sécurité et/ou de valeur est imprimé par une encre selon la revendication 9 ou 10.
  13. Procédé de vérification d'un document de sécurité et/ou de valeur selon une des revendications 1 à 8, dans lequel le document de sécurité et/ou de valeur est irradié par un rayonnement lumineux, l'énergie duquel est suffisante pour exciter la luminescence de la zone partielle à semi-conducteur ou qui est conçu pour exciter la luminescence par des processus à deux ou multiples photons ou conversion ascendante, et dans lequel le temps d'extinction de la luminescence excitée est mesuré et comparé avec une première valeur de référence du temps d'extinction.
  14. Procédé selon la revendication 13, lorsqu'elle dépend des revendications 5 à 7, dans lequel une différence de potentiel définie est appliquée au premier champ de contact électrique et au second champ de contact électrique, dans lequel le document de sécurité et/ou de valeur selon une des revendications 5 à 8 est irradié par un rayonnement lumineux, l'énergie duquel est suffisante pour exciter la luminescence de la zone partielle à semi-conducteur, et dans lequel le temps d'extinction de la luminescence excitée est mesuré et comparé avec une deuxième valeur de référence du temps d'extinction.
  15. Procédé selon la revendication 14, dans lequel en addition, le temps d'extinction de la luminescence excitée est mesuré sans appliquer une différence de potentiel, et dans lequel la différence des temps d'extinction mesurés sans et avec l'application du potentiel est comparée avec une valeur de référence de la différence du temps d'extinction.
EP07801331.5A 2006-09-08 2007-09-05 Document de sécurité et / ou de valeur pourvu d'un système de contact à semi-conducteur de type ii Active EP2061630B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
SI200731280T SI2061630T1 (sl) 2006-09-08 2007-09-05 Varnostni ali vrednostni dokument s polprevodniškim kontaktnim sistemom tipa II
CY20131100483T CY1114056T1 (el) 2006-09-08 2013-06-14 Εγγραφο ασφαλειας και/ή αξιας με ενα συστημα επαφης ημιαγωγων τυπου ιι

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006043119A DE102006043119A1 (de) 2006-09-08 2006-09-08 Sicherheits- und/oder Wertdokument mit einem Typ II Halbleiterkontaktsystem
PCT/DE2007/001596 WO2008028477A2 (fr) 2006-09-08 2007-09-05 Document de sécurité et / ou de valeur pourvu d'un système de contact à semi-conducteur de type ii

Publications (2)

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EP2061630A2 EP2061630A2 (fr) 2009-05-27
EP2061630B1 true EP2061630B1 (fr) 2013-04-24

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US (1) US9399365B2 (fr)
EP (1) EP2061630B1 (fr)
CN (1) CN101511601B (fr)
CY (1) CY1114056T1 (fr)
DE (1) DE102006043119A1 (fr)
ES (1) ES2410808T3 (fr)
PT (1) PT2061630E (fr)
RU (1) RU2430837C2 (fr)
SI (1) SI2061630T1 (fr)
WO (1) WO2008028477A2 (fr)

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US10173454B2 (en) * 2009-02-17 2019-01-08 Bundesdruckerei Gmbh Security and/or value document having a type II semiconductor contact system
US8503539B2 (en) * 2010-02-26 2013-08-06 Bao Tran High definition personal computer (PC) cam
EP2727739A1 (fr) * 2012-11-01 2014-05-07 Trüb AG Corps de carte avec couches de film modifiables
JP6337449B2 (ja) * 2013-11-27 2018-06-06 株式会社リコー 会議サーバ装置、プログラム、情報処理方法、及び会議システム
DE102013225518B4 (de) * 2013-12-10 2018-05-03 Bundesdruckerei Gmbh Sicherheitselement mit UV-anregbarem feldabhängigem Effekt

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WO2002053677A1 (fr) * 2001-01-05 2002-07-11 Biocrystal, Ltd. Compositions d'encre fluorescente comprenant des nanocristaux fluorescents fonctionnalises

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US6753999B2 (en) * 1998-03-18 2004-06-22 E Ink Corporation Electrophoretic displays in portable devices and systems for addressing such displays
US6552290B1 (en) * 1999-02-08 2003-04-22 Spectra Systems Corporation Optically-based methods and apparatus for performing sorting coding and authentication using a gain medium that provides a narrowband emission
CA2495309C (fr) * 2002-08-13 2011-11-08 Massachusetts Institute Of Technology Heterostructures de nanocristaux de semi-conducteur
DE10314162A1 (de) * 2003-03-28 2004-12-16 Siemens Ag Sicherheitsmerkmal mit einer Licht emittierenden Diode
DE10346634A1 (de) * 2003-10-08 2005-05-12 Giesecke & Devrient Gmbh Wertdokument
DE10346631A1 (de) * 2003-10-08 2005-05-19 Giesecke & Devrient Gmbh Wertdokument
DE102004016249A1 (de) * 2004-04-02 2005-10-20 Chromeon Gmbh Lumineszenz-optische Verfahren zur Authentikation von Produkten
DE102004045211B4 (de) 2004-09-17 2015-07-09 Ovd Kinegram Ag Sicherheitsdokument mit elektrisch gesteuertem Anzeigenelement

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WO2002053677A1 (fr) * 2001-01-05 2002-07-11 Biocrystal, Ltd. Compositions d'encre fluorescente comprenant des nanocristaux fluorescents fonctionnalises

Also Published As

Publication number Publication date
CN101511601A (zh) 2009-08-19
ES2410808T3 (es) 2013-07-03
SI2061630T1 (sl) 2013-09-30
DE102006043119A1 (de) 2008-03-27
CN101511601B (zh) 2012-05-23
WO2008028477A2 (fr) 2008-03-13
RU2430837C2 (ru) 2011-10-10
US9399365B2 (en) 2016-07-26
CY1114056T1 (el) 2016-07-27
EP2061630A2 (fr) 2009-05-27
WO2008028477A3 (fr) 2008-06-26
RU2009112730A (ru) 2010-10-20
US20110006667A1 (en) 2011-01-13
PT2061630E (pt) 2013-05-10

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