Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
  • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
  • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
  • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
  • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F21—LIGHTING
  • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
  • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F21—LIGHTING
  • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
  • F21Y2113/00—Combination of light sources
  • F21Y2113/10—Combination of light sources of different colours
  • F21Y2113/13—Combination of light sources of different colours comprising an assembly of point-like light sources
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F21—LIGHTING
  • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
  • F21Y2115/00—Light-generating elements of semiconductor light sources
  • F21Y2115/10—Light-emitting diodes [LED]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/481—Disposition
  • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
  • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
  • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
  • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
  • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
  • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
  • H01L2924/191—Disposition
  • H01L2924/19101—Disposition of discrete passive components
  • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Definitions

• the invention relates to an optoelectronic device and a method for operating an optoelectronic device.
• Optoelectronic devices may include multiple light emitting diodes.
• An emission spectrum of the optoelectronic arrangement results from the emission spectra of the individual light-emitting diodes. Due to scattering of the emission spectra of the light-emitting diodes in series production, it may be complicated to achieve color coordinates of the radiation of the optoelectronic device at a predetermined interval.
• a light-emitting diode arrangement which comprises two light-emitting diodes.
• the two LEDs are connected in anti-parallel to each other.
• the light-emitting diode arrangement comprises a device which provides the two light-emitting diodes with a current of alternating direction.
• Document US 5,861,990 describes a combined optical scattering and concentration arrangement in which a first surface of a material receives light from a range of angles of incidence and a second surface of the material emits light in a range of angles of radiation.
• the object of the present invention is to provide an optoelectronic device and a method for operating an optoelectronic device, which enable flexible adjustment of radiation of the optoelectronic device.
• An optoelectronic device comprises a power LED and a one-part LED. From the power light emitting diode, a first electromagnetic radiation can be provided. From the setting LED a second electromagnetic radiation can be emitted. The first radiation has a first emission spectrum and the second radiation has a second emission spectrum. A total radiation of the optoelectronic device comprises the first radiation and the second radiation.
• the majority of the total radiation of the optoelectronic device is realized by means of the power LED.
• the second radiation which is provided by the adjustment light-emitting diode, is added to the first radiation.
• the second emission spectrum differs from the first emission spectrum.
• the first emission spectrum may include a first wavelength that is different than the wavelengths covered by the second emission spectrum.
• the second emission spectrum may comprise a second wavelength different from that of the first emission spectra. - -
• the first and the second emission spectrum comprise the same wavelengths, wherein a first intensity distribution in the first emission spectrum differs from a second intensity distribution in the second emission spectrum.
• the tuning LED is used to accurately adjust an emission spectrum of the total radiation.
• the color coordinates of the total radiation of the optoelectronic device are achieved within a predefinable interval by admixing the second radiation with the first radiation.
• an X-coordinate and a Y-coordinate in a CIE diagram, English CIE chromaticity diagram called.
• the color coordinates which are achieved solely by operation of the power light-emitting diode and which are not within the predetermined interval, are shifted by means of the second radiation emitted by the setting light-emitting diode so that the sum of the first and the second radiation is color coordinates in the given interval.
• a first semiconductor body referred to as the chip or chip, comprises the power light emitting diode and a second semiconductor body has the tuning light emitting diode.
• the first semiconductor body has a first radiation exit area, from which the first radiation exits with the first emission spectrum, and the second semiconductor body a second radiation exit area, from the second radiation emerges with the second emission spectrum, on.
• the first radiation exit area is at least a factor of 4 larger than the second radiation exit area.
• the first radiation exit area is preferably larger by a factor of 5 than the second radiation exit area.
• An intensity ratio of the first radiation to the second radiation is a function of the area ratio of the first radiation exit surface to the second radiation exit surface.
• the optoelectronic device comprises a carrier, on which the first and the second semiconductor body are fastened.
• the carrier may be formed as a housing for the first and the second semiconductor body.
• a first electric power of the power LED and a second electric power of the setting LED are supplied.
• an amount of the first electrical power is at least a factor of 4 greater than the second electrical power.
• the amount of the first electrical power is preferably greater by a factor of 5 than the amount of the second electrical power.
• an intensity ratio of the first radiation to the second radiation is adjustable.
• the first radiation is greater in amount than the second radiation.
• the second emission spectrum and the second electrical power are provided such that the color coordinates of the total radiation of the optoelectronic device are within the predetermined interval in the CIE diagram.
• the optoelectronic arrangement comprises at least one further setting LED.
• the at least one further setting LED is intended to emit at least one further radiation.
• the at least one further radiation has at least one further emission spectrum.
• the total radiation of the optoelectronic arrangement additionally comprises the at least one further radiation.
• the at least one further emission spectrum preferably differs from the first emission spectrum and also from the second emission spectrum.
• the further adjusting light-emitting diode can preferably be used for more precise fine adjustment of the emission spectrum of the total radiation of the optoelectronic device.
• the color coordinates of the total radiation of the optoelectronic device can thus be set even more precisely in the predetermined interval by the admixing of the second radiation of the adjustment LED and the at least one further radiation of the at least one further adjustment LED to the first radiation.
• At least one further semiconductor body comprises the at least one further setting LED.
• the at least one further semiconductor body has at least one further radiation exit surface.
• the first radiation exit area of the first semiconductor body is larger by at least a factor of 4 than the at least one further radiation exit area.
• the at least one further setting LED is supplied with at least one additional electrical power.
• the first electrical power is preferably greater by at least a factor of 4 than the at least one further electrical power.
• the optoelectronic assembly comprises at least one further power light emitting diode.
• the at least one further power LED provides at least one additional radiation.
• the at least one additional radiation has at least one additional emission spectrum.
• the majority of the total radiation of the optoelectronic device is provided by means of two or more power LEDs.
• the adjustment LED or the adjustment LEDs can be used.
• the power and the setting LED and possibly the other power and / or setting LEDs are connected in parallel polarity.
• the optoelectronic arrangement comprises a device for optical mixing, which is arranged downstream of the power and the setting LED and optionally the other power and / or setting LEDs in Ab- beam direction.
• Radiation is supplied to the device for optical mixing.
• the first and the second radiation are internally rewired multiple times in the device for optical mixing.
• the optoelectronic arrangement thus provides the total radiation on the output side due to a mixture of the first and the second radiation and optionally the radiation of further adjustment and power LEDs. It is thus advantageously achieved that the radiations emitted by the optoelectronic device in different directions have approximately the same emission spectrum. By means of the device for optical mixing thus an angular independence of the emission spectrum of the total radiation is achieved. The intensity of the total radiation can be angle-dependent.
• the optical mixing device comprises a combined optical scattering and concentration assembly in which a first surface of a material receives light from a range of angles of incidence and a second surface of the material emits light in a range of angles of radiation.
• the optoelectronic arrangement comprises at least one phosphor.
• the phosphor is arranged downstream of the power and the setting LED and possibly the other power and / or setting LEDs in the emission direction.
• the phosphor can be incorporated in a potting compound, which is applied to the power LED and the setting LED and optionally other setting and power LEDs.
• the device for optical mixing comprises the at least one phosphor.
• the first radiation and / or the second radiation and / or a further radiation which may be affected by the further power and / or adjustment
• Light emitting diodes is emitted, at least at one wavelength at least partially converted.
• the phosphor absorbs at least a portion of the radiation emitted by the light emitting diode, and thereafter emits radiation of a longer wavelength than the wavelength of the radiation that was originally emitted by the light emitting diode.
• a resulting radiation is obtained by mixing the wavelength-converted portion of the radiation with the radiation originally emitted by the light-emitting diode.
• the phosphor is advantageously used to adjust the emission spectrum of the total radiation of the optoelectronic device.
• the power LED and / or the setting LED or the other power LEDs and / or the other setting LEDs can be realized as a thin-film light-emitting diode chip.
• a thin-film light-emitting diode chip is characterized in particular by the following characteristic features: on a first main surface of a radiation-generating epitaxial layer sequence facing a carrier element, a reflective layer is applied or formed, which forms at least part of the electromagnetic radiation generated in the epitaxial layer sequence reflected back; the semiconductor layer sequence is free of a growth substrate.
• "free from a growth substrate means that a growth substrate which may be used for growth is removed from the semiconductor layer sequence or at least heavily thinned. In particular, it is thinned so that it alone or together with the epitaxial layer sequence is not self-supporting.
• the epitaxial layer sequence has a thickness in the range of 20 ⁇ m or less, in particular in the range of 10 ⁇ m; and the epitaxial layer sequence contains at least one semiconductor layer having at least one surface which has a mixing structure which, in the ideal case, leads to an approximately ergodic distribution of the light in the epitaxial epitaxial layer sequence, that is to say it has as ergodically stochastic scattering behavior as possible.
• a basic principle of a thin-film light-emitting diode chip is, for example, in I. Schnitzer et al. , Appl. Phys. Lett. 63
• a thin-film light-emitting diode chip is, to a good approximation, a Lambert surface radiator and is therefore particularly well suited for use in a headlight.
• Adjustment LEDs may be manufactured based on different semiconductor material systems, depending on the wavelength.
• a semiconductor body based on In x GayAli_ x _yAs for visible red to yellow radiation, for example, a semiconductor body based on In x Ga-yAl ] __ x _yP and for short-wave visible, especially green to blue Radiation or UV Radiation, for example, a semiconductor body based on In x GayAl ] __ x _yN suitable, where 0 ⁇ _ x ⁇ _ 1 and 0 £ y £ 1 applies.
• the epitaxial layer sequence preferably comprises at least one active zone which is suitable for generating electromagnetic radiation.
• the active zone may, for example, have a pn junction, a double heterostructure, a single quantum well or, more preferably, a multiple quantum well structure, abbreviated MQW.
• quantum well structure includes in particular any structure in which charge carriers can undergo quantization of their energy states by inclusion, English confinement.
• quantum well structure does not specify the dimensionality of the quantization. It thus includes quantum wells, quantum wires and quantum dots and any combination of these structures.
• a method for operating an optoelectronic device comprises providing a first radiation by means of a power light emitting diode.
• the first radiation has a first emission spectrum.
• a second radiation is provided by means of a setting LED.
• the second radiation comprises a second emission spectrum.
• a major portion of the total radiation from the power light emitting diode and a smaller portion from the tuning LED can be provided.
• the first and second radiation are emitted substantially simultaneously.
• the first electrical power is at least four times the second electrical power.
• the first electrical power is five times the second electrical power.
• the first and the second electrical power are supplied substantially simultaneously to the power light emitting diode and the tuning light emitting diode, respectively.
• the two electrical powers can each be constant.
• the power light emitting diode is a pulse width modulated first current and the tuning LED a pulse width modulated second current zugelei- tet.
• the first and the second electrical power are therefore not constant, but clocked.
• the modulation of the two currents can be approximately equal. Therefore, the two powers can be supplied to the power LED or the setting LED at substantially the same time.
• the first current may be modulated differently to the second current.
• the first and / or the second electrical power can be variable over time.
• changes in the color coordinates in operation may be possible.
• different color coordinates are thus adjustable during operation.
• long-term deviations of the color coordinates from the original color coordinates can also be compensated.
• Such long-term deviations can be caused by a different degradation at individual wavelengths in the emission spectra of the power and / or setting LED.
• FIGS. 1A and 1B show an exemplary embodiment of an optoelectronic device according to the invention as a cross section and in plan view
• FIG. 2 shows an alternative exemplary embodiment of an optoelectronic arrangement according to the invention in a plan view
• FIG. 3 shows an alternative exemplary embodiment of an optoelectronic device according to the invention as a schematic plan view
• FIG. 4 shows a further exemplary embodiment of an optoelectronic device according to the invention as a schematic plan view.
• FIG. 1A shows an exemplary embodiment of an optoelectronic device according to the invention as a cross section.
• the optoelectronic device 1 comprises a power LED 10, a setting LED 20 and a carrier 2.
• the power light-emitting diode 10 has a first semiconductor body 11 and the tuning LED 20 has a second semiconductor body 21.
• the first semiconductor body 11 comprises a first radiation exit surface FL.
• the second semiconductor body 21 comprises a second radiation exit surface FE.
• the carrier 2 comprises a first connection surface 31, on which the power light-emitting diode 10 is arranged, and a second connection surface 32, on which the adjustment light-emitting diode 20 is arranged.
• the first semiconductor body 11 is electrically conductive with the first connection surface 31 and the second semiconductor body 21 is electrically conductively connected to the second connection surface 32.
• the carrier 2 comprises a third and a fourth pad 33, 34. The first semiconductor body 11 is coupled to the third pad 33 and the second semiconductor body 21 is coupled to the fourth pad 34.
• connection region on the first radiation exit surface FL is connected to the third connection surface 33 by means of a bonding wire 35 and a connection region on the second radiation exit surface FE is connected to the fourth connection surface 34 by means of a further bonding wire 35.
• the power light emitting diode 10 is arranged near a center or a symmetry axis 7 of the optoelectronic device 1.
• the adjusting LED 20 is arranged at a distance from the axis of symmetry 7.
• the optoelectronic device 1 further comprises a device 5 for optical mixing.
• Device 5 for optical mixing is arranged on the carrier 2.
• the power light-emitting diode 10 is supplied with a first electrical power PL. Accordingly, the adjusting LED 20 is supplied with a second electric power PE.
• the supply of the first electrical power PL is realized by means of the first connection surface 31 or the third connection surface 33 and the bonding wire 35.
• the supply of the second electrical power PE is carried out by means of the second connection surface 32 and the fourth connection surface 34 as well as the further bonding wire 35.
• the power light emitting diode 10 outputs a first radiation SL.
• the first radiation SL has a first emission spectrum EL.
• the adjustment LED 20 emits a second radiation SE.
• the second radiation SE comprises a second emission spectrum EE.
• the first radiation SL is emitted at the first radiation exit surface FL and the second radiation SE is emitted at the second radiation exit surface SE.
• Radiation SL is performed in response to the first electric power PL and the emission of the second radiation SE is performed in response to the second electric power PE.
• the first and the second radiation SL, SE are provided such that the optoelectronic device 1 has a total radiation SO.
• the total radiation SO is a sum of the first and the second radiation SE, SL.
• the first radiation SL is greater in magnitude than the second Radiation SE.
• the optical mixing device 5 the first and the second radiation SL, SE are mixed. It is thereby achieved that the total radiation SO of the optoelectronic device 1 has approximately the same emission spectrum in each radiation direction. The total intensity of the total radiation depends on the direction
• the total radiation SO has an emission spectrum EO within a prescribable range.
• the optical mixing device 5 advantageously compensates for the fact that the power LED 10 and the tuning LED 20 can not be arranged at the same time in the symmetry axis 7 or in the center of the optoelectronic device 1.
• the optoelectronic device 1 additionally comprises a phosphor 6.
• the phosphor 6 is introduced into the optoelectronic device 1 such that it is arranged in a beam path of the first and the second radiation SL, SE.
• the phosphor 6 is used to set the emission spectrum EO of the total radiation SO of the optoelectronic device 1.
• the emission spectrum EO of the total radiation SO compared to the first and the second emission spectrum EL, EE be changed. Due to the phosphor 6, the emission spectrum EO is widened with respect to the first and the second emission spectrum EL, EE.
• FIG. 1B shows an exemplary embodiment of the optoelectronic device 1 according to the invention, which is shown as a cross section in FIG. 1A, in plan view.
• the first and the third pads 31, 33 are used for electrically conductive connection of the power LED 10 with two external terminals 47, 48 of the optoelectronic device 1. Accordingly, the second and the fourth pads 32, 34 for electrically conductive connection of the setting LED 20 with two further external terminals 49, 50 of the optoelectronic device. 1
• the optoelectronic device 1 comprises at least one further setting LED.
• the optoelectronic device 1 has at least one additional power light emitting diode.
• FIG. 2 shows an exemplary embodiment of an optoelectronic device according to the invention in plan view.
• the optoelectronic device 1 according to FIG. 2 is a development of the optoelectronic device 1 according to FIGS. 1A and 1B.
• the optoelectronic arrangement 1 according to FIG. 2 comprises a first and a second series resistor 37, 38, which are arranged on the carrier 2.
• the carrier 2 comprises a first and a second electrical connection 3, 4.
• the first connection surface 31 and the second connection surface 32 are connected to the first electrical connection 3.
• the power LED 10 is connected to the second electrical terminal 4 via the first series resistor 37. Accordingly, the adjustment LED 20 is over the second Series resistor 38 connected to the second electrical connection 4.
• the first series resistor 37 is arranged between the third connection surface 33 and the second electrical connection 4.
• the second series resistor 38 is arranged between the fourth connection surface 34 and the second electrical connection 4.
• the first and the second electrical connection 3, 4 serve as external connections of the optoelectronic device 1.
• the optoelectronic device 1 thus comprises a parallel circuit comprising a first series circuit, comprising the power LED 10 and the first series resistor 37, as well as a second series circuit the adjustment LED 20 and the second series resistor 38th
• the sum of the first and the second electrical power PL, PE is supplied to the optoelectronic device 1 by means of the first and the second electrical connection 3, 4.
• the first and the second series resistor 37, 38 can thus be carried out a division of the total electrical power to the first electric power PL and the second electric power PE.
• the radiation power of the first radiation SL or of the second radiation SE can be adjusted.
• an intensity distribution in the emission spectrum EO of the total radiation SO can be finely adjusted.
• the optoelectronic device 1 comprises at least one further series circuit, comprising a further adjustment LED and a further series resistor.
• the least a further series connection is connected between the first and the second electrical connection 3, 4.
• the optoelectronic device 1 at least one additional series circuit, comprising a further power LED and another series resistor.
• the at least one additional series circuit is connected between the first and the second electrical connection 3, 4.
• FIG. 3 shows an exemplary embodiment of an optoelectronic device according to the invention as a schematic plan view.
• the optoelectronic arrangement according to FIG. 3 is a further development of the optoelectronic arrangements shown in FIGS. 1A, 1B and 2.
• the optoelectronic device 1 comprises the power LED 10 and the first tuning LED 20.
• the optoelectronic device 1 comprises a second, a third and a fourth tuning LED 22, 24, 26.
• the power LED 10 and the four tuning LEDs 20, 22, 24, 26 are arranged symmetrically with respect to the axis of symmetry 7.
• the four setting light-emitting diodes 20, 22, 24, 26 are arranged uniformly distributed on a circular arc 8.
• the circular arc 8 has the axis of symmetry 7 as the center.
• the second adjusting LED 22 has a third semiconductor body 23 with a third radiation exit surface FEI.
• the third adjustment LED 24 has a fourth semiconductor body 25 with a fourth radiation exit surface FE2.
• the fourth adjustment LED 26 includes a fifth semiconductor body 27 having a fifth radiation exit surface FE3.
• the power light emitting diode 10 outputs the first radiation SL as a function of the first electrical power PL.
• the tuning LED 20 radiates the second radiation SE as a function of the second electrical power PE.
• the second setting LED 22 is supplied with a third electric power PE1.
• the second adjustment LED 22 emits a third radiation SEI.
• the third radiation SEI comprises a third emission spectrum EE1.
• the third setting LED 24 is supplied with a fourth electrical power PE2.
• the third radiation SEI comprises a third emission spectrum EE1.
• the third setting LED 24 is supplied with a fourth electrical power PE2.
• the third radiation SEI comprises
• Adjustment LED 24 emits a fourth radiation SE2.
• the fourth radiation SE2 comprises a fourth emission spectrum EE2.
• the fifth tuning LED 26 is supplied with a fifth electric power PE3.
• the fourth adjustment LED 26 emits a fifth radiation SE3.
• the fifth radiation SE3 comprises a fifth emission spectrum EE3.
• the total radiation SO of the optoelectronic device 1 is a function of the first to fifth radiation SL, SE, SEI, SE2, SE3.
• the total radiation SO of the optoelectronic device 1 is a summation of the first to fifth radiation SL, SE, SEI, SE2, SE3.
• the emission spectrum EO of the total radiation SO depends on the first to fifth emission spectrum EL, EE, EE1, EE2, EE3.
• An intensity distribution in the emission spectrum EO of the total radiation SO is a function of the intensity distributions in the five emission spectra EL, EE, EE1, EE2, EE3.
• the emission spectrum EO of the total radiation SO be fine tuned.
• a phosphor 6 is provided, which is a part of the power LED 10 and / or the four adjustment LEDs 20, 22, 24, 26 provided radiation SL, SE, SEI, SE2, SE3 converts.
• the emission spectrum EO of the total radiation SO is varied compared to a pure addition of the five emission spectra EL, EE, EE1, EE2, EE3.
• the four adjustment LEDs 20, 22, 24, 26 are arranged distributed uniformly on an ellipse.
• the optoelectronic device 1 comprises at least one further setting LED.
• the optoelectronic device 1 has at least one additional power light emitting diode.
• FIG. 4 shows an exemplary embodiment of an optoelectronic device according to the invention, which represents a development of the optoelectronic device according to FIGS. 1A, 1B and 2.
• the optoelectronic device 1 according to FIG. 4 comprises the power light diode 10 as well as a further power light diode 12.
• the power light diode 10 and the further power light diode 12 are arranged adjacently.
• the further power light emitting diode 12 has a further semiconductor body 13.
• the further semiconductor body 13 comprises a further radiation exit surface FL1.
• the optoelectronic device 1 furthermore comprises the setting LED 20 and the second setting LED 22.
• the power LED 10 and the further power LED 12 are arranged between the setting LED 20 and the second adjusting LED 22.
• the four Light-emitting diodes 10, 12, 20, 22 are arranged on a straight line 9.
• the arrangement of the four light-emitting diodes 10, 12, 20, 22 is symmetrical with respect to the axis of symmetry
• the further power light emitting diode 12 is supplied with a further electric power PLl.
• the further power light emitting diode 12 emits a further radiation SL1 at the further radiation exit surface FL1.
• the further radiation SL1 comprises a further emission spectrum EL1.
• the emission spectrum EO of the total radiation SO is therefore essentially a function of the first emission spectrum EL and of the further emission spectrum EL1, which is set finer by means of the second and the third emission spectrum EE, EE1.
• the emission spectrum EO of the total radiation SO is thus advantageously provided as a function of the first radiation SL and the further radiation SLl of two power LEDs.
• the optoelectronic device 1 comprises at least one further setting LED. In an alternative embodiment, the optoelectronic device 1 has at least one further power LED.

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• 2006
  • 2006-12-29 DE DE102006061941A patent/DE102006061941A1/de not_active Withdrawn
• 2007
  • 2007-12-14 EP EP07856113A patent/EP2054937A1/de not_active Withdrawn
  • 2007-12-14 WO PCT/DE2007/002264 patent/WO2008080383A1/de active Application Filing
  • 2007-12-14 CN CNA2007800489942A patent/CN101573793A/zh active Pending
  • 2007-12-14 KR KR1020097015959A patent/KR20090099000A/ko not_active Application Discontinuation
  • 2007-12-24 TW TW096149654A patent/TWI396272B/zh not_active IP Right Cessation

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