EP2031633A1 - Stabilité mécanique élévée d'une source ionique à gaz - Google Patents

Stabilité mécanique élévée d'une source ionique à gaz Download PDF

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Publication number
EP2031633A1
EP2031633A1 EP07016766A EP07016766A EP2031633A1 EP 2031633 A1 EP2031633 A1 EP 2031633A1 EP 07016766 A EP07016766 A EP 07016766A EP 07016766 A EP07016766 A EP 07016766A EP 2031633 A1 EP2031633 A1 EP 2031633A1
Authority
EP
European Patent Office
Prior art keywords
emitter
unit
ion source
charged particle
particle beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP07016766A
Other languages
German (de)
English (en)
Other versions
EP2031633B1 (fr
Inventor
Dieter Winkler
Thomas Jasinski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ICT Integrated Circuit Testing Gesellschaft fuer Halbleiterprueftechnik mbH
Original Assignee
ICT Integrated Circuit Testing Gesellschaft fuer Halbleiterprueftechnik mbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ICT Integrated Circuit Testing Gesellschaft fuer Halbleiterprueftechnik mbH filed Critical ICT Integrated Circuit Testing Gesellschaft fuer Halbleiterprueftechnik mbH
Priority to EP07016766A priority Critical patent/EP2031633B1/fr
Priority to US12/199,574 priority patent/US8044370B2/en
Priority to JP2008218495A priority patent/JP5053958B2/ja
Publication of EP2031633A1 publication Critical patent/EP2031633A1/fr
Priority to US13/226,931 priority patent/US20110315890A1/en
Application granted granted Critical
Publication of EP2031633B1 publication Critical patent/EP2031633B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
    • F25D19/00—Arrangement or mounting of refrigeration units with respect to devices or objects to be refrigerated, e.g. infrared detectors
    • F25D19/006—Thermal coupling structure or interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/26—Ion sources; Ion guns using surface ionisation, e.g. field effect ion sources, thermionic ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B2500/00—Problems to be solved
    • F25B2500/13—Vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0216—Means for avoiding or correcting vibration effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0807—Gas field ion sources [GFIS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining

Definitions

  • the cooling unit can include any of the following systems:
  • the cooling unit may be cryo-cooler, e.g, open or closed cycle coolers, open or closed cycle Helium coolers, open or closed cycle nitrogen coolers, a combination thereof or another cooler.
  • cryo-cooler e.g, open or closed cycle coolers, open or closed cycle Helium coolers, open or closed cycle nitrogen coolers, a combination thereof or another cooler.
  • Particular examples can be pulse tube coolers or GM cooler (Gifford McMahon cooler).
  • a cooling unit 146 may introduce vibrations to the emitter. This is also true for the embodiments in which the emitter unit is divided into a supply module and an emitter module. Thus, the cooling unit should be mechanically decoupled from the emitter unit.
EP07016766A 2007-08-27 2007-08-27 Dispositif à particules chargées comprenant une source ionique à gaz ayant une stabilité mécanique élévée Active EP2031633B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP07016766A EP2031633B1 (fr) 2007-08-27 2007-08-27 Dispositif à particules chargées comprenant une source ionique à gaz ayant une stabilité mécanique élévée
US12/199,574 US8044370B2 (en) 2007-08-27 2008-08-27 Gas ion source with high mechanical stability
JP2008218495A JP5053958B2 (ja) 2007-08-27 2008-08-27 高い機械的安定性を備えたガスイオン源
US13/226,931 US20110315890A1 (en) 2007-08-27 2011-09-07 Gas ion source with high mechanical stability

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP07016766A EP2031633B1 (fr) 2007-08-27 2007-08-27 Dispositif à particules chargées comprenant une source ionique à gaz ayant une stabilité mécanique élévée

Publications (2)

Publication Number Publication Date
EP2031633A1 true EP2031633A1 (fr) 2009-03-04
EP2031633B1 EP2031633B1 (fr) 2012-09-19

Family

ID=38938538

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07016766A Active EP2031633B1 (fr) 2007-08-27 2007-08-27 Dispositif à particules chargées comprenant une source ionique à gaz ayant une stabilité mécanique élévée

Country Status (3)

Country Link
US (2) US8044370B2 (fr)
EP (1) EP2031633B1 (fr)
JP (1) JP5053958B2 (fr)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7554097B2 (en) 2003-10-16 2009-06-30 Alis Corporation Ion sources, systems and methods
US7554096B2 (en) 2003-10-16 2009-06-30 Alis Corporation Ion sources, systems and methods
US7557360B2 (en) 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7557359B2 (en) 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7557361B2 (en) 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7557358B2 (en) 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
WO2009154631A1 (fr) * 2008-06-20 2009-12-23 Carl Zeiss Smt, Inc. Sources d'ions, systèmes et procédés
US7786451B2 (en) 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US7786452B2 (en) 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US7804068B2 (en) 2006-11-15 2010-09-28 Alis Corporation Determining dopant information
WO2010135444A3 (fr) * 2009-05-20 2011-04-07 Carl Zeiss Nts, Llc Modification et surveillance d'échantillon simultanée
WO2010147872A3 (fr) * 2009-06-18 2011-10-20 Carl Zeiss Nts, Llc Systèmes à particules chargées refroidies et procédés
US8110814B2 (en) 2003-10-16 2012-02-07 Alis Corporation Ion sources, systems and methods

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9159527B2 (en) 2003-10-16 2015-10-13 Carl Zeiss Microscopy, Llc Systems and methods for a gas field ionization source
EP1936653B1 (fr) * 2006-12-18 2014-01-15 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Source ionique de champ de gaz pour applications multiples
EP2012341B1 (fr) * 2007-07-06 2012-05-02 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Source ionique de gaz modulaire
EP2031633B1 (fr) * 2007-08-27 2012-09-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Dispositif à particules chargées comprenant une source ionique à gaz ayant une stabilité mécanique élévée
US8779380B2 (en) 2008-06-05 2014-07-15 Hitachi High-Technologies Corporation Ion beam device
WO2010082466A1 (fr) * 2009-01-15 2010-07-22 株式会社日立ハイテクノロジーズ Dispositif à faisceau ionique
JP5033844B2 (ja) 2009-06-30 2012-09-26 株式会社日立ハイテクノロジーズ イオン顕微鏡
JP5383419B2 (ja) 2009-10-14 2014-01-08 株式会社日立ハイテクノロジーズ イオンビーム装置
JP6116307B2 (ja) * 2013-03-25 2017-04-19 株式会社日立ハイテクサイエンス 集束イオンビーム装置
JP6112930B2 (ja) 2013-03-26 2017-04-12 株式会社日立ハイテクサイエンス ガスイオン源、及び集束イオンビーム装置
JP5969586B2 (ja) * 2014-12-26 2016-08-17 株式会社日立ハイテクノロジーズ イオンビーム装置
JP6560871B2 (ja) * 2015-02-03 2019-08-14 株式会社日立ハイテクサイエンス 集束イオンビーム装置
JP6633986B2 (ja) * 2016-07-20 2020-01-22 株式会社日立ハイテクノロジーズ 荷電粒子線装置
KR102120946B1 (ko) * 2018-11-16 2020-06-10 (주)엠크래프츠 전자빔 자동정렬구조가 구비된 전자현미경

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998028776A2 (fr) * 1996-12-23 1998-07-02 Koninklijke Philips Electronics N.V. Appareil opto-electronique comportant un porte-echantillon a basse temperature

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4133121A1 (de) * 1991-10-05 1993-04-08 Inst Festkoerperphysik Und Ele Anordnung zur erzeugung einer feinfokussierten niederenergetischen ionensonde
US7554096B2 (en) * 2003-10-16 2009-06-30 Alis Corporation Ion sources, systems and methods
US7601953B2 (en) * 2006-03-20 2009-10-13 Alis Corporation Systems and methods for a gas field ion microscope
US9159527B2 (en) * 2003-10-16 2015-10-13 Carl Zeiss Microscopy, Llc Systems and methods for a gas field ionization source
US7939800B2 (en) * 2005-10-19 2011-05-10 ICT, Integrated Circuit Testing, Gesellschaft fur Halbleiterpruftechnik mbH Arrangement and method for compensating emitter tip vibrations
EP2031633B1 (fr) * 2007-08-27 2012-09-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Dispositif à particules chargées comprenant une source ionique à gaz ayant une stabilité mécanique élévée

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998028776A2 (fr) * 1996-12-23 1998-07-02 Koninklijke Philips Electronics N.V. Appareil opto-electronique comportant un porte-echantillon a basse temperature

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
BOTT M ET AL: "DESIGN PRINCIPLES OF A VARIABLE TEMPERATURE SCANNING TUNNELING MICROSCOPE", REVIEW OF SCIENTIFIC INSTRUMENTS, AIP, MELVILLE, NY, US, vol. 66, no. 8, 1 August 1995 (1995-08-01), pages 4135 - 4139, XP000525607, ISSN: 0034-6748 *
EADES J A ET AL: "A helium-cooled specimen stage for electron microscopy", JOURNAL OF PHYSICS E. SCIENTIFIC INSTRUMENTS, INSTITUTE OF PHYSICS PUBLISHING, BRISTOL, GB, vol. 15, no. 2, 1 February 1982 (1982-02-01), pages 184 - 186, XP020016757, ISSN: 0022-3735 *
HANSON G R ET AL: "H2 and rare gas field ion source with high angular current", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY, NEW YORK, NY, US, vol. 16, no. 6, November 1979 (1979-11-01), pages 1875 - 1878, XP007903682, ISSN: 0022-5355 *
HARIDAS M M ET AL: "Cryogenic-Scanning Electron Microscopy as a Technique to Image Sol-to-Gel Transformation in Chelated Alkoxide Systems", CERAMICS INTERNATIONAL, ELSEVIER, AMSTERDAM, NL, vol. 22, no. 2, 1996, pages 155 - 159, XP004040532, ISSN: 0272-8842 *
ORLOFF J ET AL: "Angular intensity of a gas-phase field ionization source", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 50, no. 9, September 1979 (1979-09-01), pages 6026 - 6027, XP007903677, ISSN: 0021-8979 *
WILBERTZ C ET AL: "A FOCUSED GAS-ION BEAM SYSTEM FOR SUBMICRON APPLICATION", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, SECTION - B: BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ELSEVIER, AMSTERDAM, NL, vol. B63, no. 1/2, January 1992 (1992-01-01), pages 120 - 124, XP008043027, ISSN: 0168-583X *
WILBERTZ C ET AL: "RECENT PROGRESS IN GAS FIELD ION SOURCE TECHNOLOGY", PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, vol. 2194, 1994, pages 407 - 417, XP008043021, ISSN: 0277-786X *

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7554097B2 (en) 2003-10-16 2009-06-30 Alis Corporation Ion sources, systems and methods
US7554096B2 (en) 2003-10-16 2009-06-30 Alis Corporation Ion sources, systems and methods
US7557360B2 (en) 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7557359B2 (en) 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7557361B2 (en) 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7557358B2 (en) 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US8110814B2 (en) 2003-10-16 2012-02-07 Alis Corporation Ion sources, systems and methods
US7786451B2 (en) 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US7786452B2 (en) 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US7804068B2 (en) 2006-11-15 2010-09-28 Alis Corporation Determining dopant information
WO2009154631A1 (fr) * 2008-06-20 2009-12-23 Carl Zeiss Smt, Inc. Sources d'ions, systèmes et procédés
US8633451B2 (en) 2008-06-20 2014-01-21 Carl Zeiss Microscopy, Llc Ion sources, systems and methods
WO2010135444A3 (fr) * 2009-05-20 2011-04-07 Carl Zeiss Nts, Llc Modification et surveillance d'échantillon simultanée
WO2010147872A3 (fr) * 2009-06-18 2011-10-20 Carl Zeiss Nts, Llc Systèmes à particules chargées refroidies et procédés
EP2610888A3 (fr) * 2009-06-18 2014-12-17 Carl Zeiss Microscopy, LLC Systèmes de particules chargées refroidies et procédés

Also Published As

Publication number Publication date
JP5053958B2 (ja) 2012-10-24
JP2009054589A (ja) 2009-03-12
EP2031633B1 (fr) 2012-09-19
US8044370B2 (en) 2011-10-25
US20110315890A1 (en) 2011-12-29
US20090057566A1 (en) 2009-03-05

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