EP2030252A1 - Versetzungsbasierter lichtemitter mit mis-struktur - Google Patents
Versetzungsbasierter lichtemitter mit mis-strukturInfo
- Publication number
- EP2030252A1 EP2030252A1 EP07729669A EP07729669A EP2030252A1 EP 2030252 A1 EP2030252 A1 EP 2030252A1 EP 07729669 A EP07729669 A EP 07729669A EP 07729669 A EP07729669 A EP 07729669A EP 2030252 A1 EP2030252 A1 EP 2030252A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- semiconductor
- angle
- light
- insulator
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 99
- 239000010703 silicon Substances 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 235000012431 wafers Nutrition 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 23
- 239000012212 insulator Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 8
- 238000001228 spectrum Methods 0.000 claims description 8
- 238000005401 electroluminescence Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000001194 electroluminescence spectrum Methods 0.000 abstract description 5
- 238000004020 luminiscence type Methods 0.000 description 43
- 239000010410 layer Substances 0.000 description 28
- 230000003595 spectral effect Effects 0.000 description 14
- 230000006798 recombination Effects 0.000 description 10
- 238000005215 recombination Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000009825 accumulation Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 5
- 238000001748 luminescence spectrum Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- -1 for example Substances 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000000103 photoluminescence spectrum Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000009395 breeding Methods 0.000 description 1
- 230000001488 breeding effect Effects 0.000 description 1
- 238000005136 cathodoluminescence Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000000763 evoking effect Effects 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0037—Devices characterised by their operation having a MIS barrier layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0054—Processes for devices with an active region comprising only group IV elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1347—Arrangement of liquid crystal layers or cells in which the final condition of one light beam is achieved by the addition of the effects of two or more layers or cells
- G02F1/13471—Arrangement of liquid crystal layers or cells in which the final condition of one light beam is achieved by the addition of the effects of two or more layers or cells in which all the liquid crystal cells or layers remain transparent, e.g. FLC, ECB, DAP, HAN, TN, STN, SBE-LC cells
- G02F1/13473—Arrangement of liquid crystal layers or cells in which the final condition of one light beam is achieved by the addition of the effects of two or more layers or cells in which all the liquid crystal cells or layers remain transparent, e.g. FLC, ECB, DAP, HAN, TN, STN, SBE-LC cells for wavelength filtering or for colour display without the use of colour mosaic filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/34—Colour display without the use of colour mosaic filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
- H01S3/0637—Integrated lateral waveguide, e.g. the active waveguide is integrated on a substrate made by Si on insulator technology (Si/SiO2)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3004—Structure or shape of the active region; Materials used for the active region employing a field effect structure for inducing charge-carriers, e.g. FET
- H01S5/3009—MIS or MOS conffigurations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3027—IV compounds
- H01S5/3031—Si
Definitions
- the invention relates to a light-emitting semiconductor component based on silicon and a method for producing such a light-emitting semiconductor component.
- Infrared spectral ranges are predestined for optical signal processing.
- the basic material of semiconductor technology is silicon.
- known, efficient light emitting diodes and laser diodes in the infrared spectral range are not made of silicon, but in particular of Ill-V semiconductors such as gallium arsenide, indium arsenide or Indiumgalliumarsenid. These can only be integrated into silicon-based semiconductor technology in the form of expensive hybrid processes. Such procedures are not granted application opportunities.
- Silicon has long not been considered to be a suitable base material for light emitters because, unlike, for example, gallium arsenide and many other semiconductor materials, silicon is a so-called indirect semiconductor.
- indirect semiconductors the energy minimum of the conduction band states, corresponding to the minimum free electron energy, and the energy maximum of the valence band states, corresponding to the minimum free hole energy, as a function of the charge carrier pulse, are not at the same pulse value.
- V. Kveder et al. achieve an increase in the efficiency of D1 luminescence at room temperature by suppressing non-radiative recombination processes caused by impurities located in the vicinity of the dislocations.
- Kveder et al. described light-emitting diodes Disadvantage of Kveder et al. described light-emitting diodes is that their luminescence extends over a relatively wide spectral range and also has a pronounced shoulder at higher energies by 0.85 eV. This luminescence is referred to as D2 luminescence. However, it is uninteresting for optoelectronic applications. The by Kveder et. Moreover, all plastically deformed substrates used to make the light-emitting diodes have the disadvantage that the irregular dislocation arrangements contained therein - A -
- the technical problem underlying the present invention is to further develop such a silicon-based light-emitting semiconductor component that the light emission is particularly intense.
- a light-emitting semiconductor component having a substrate which has a first interface between a first and a second silicon layer whose ideal imaginary grating structures are relative to one another about a first axis perpendicular to the substrate surface rotated by a rotation angle and tilted about a second axis lying parallel to the substrate surface by a tilt angle such that an offset network is present in the region of the interface, wherein the rotation angle and the tilt angle are selected so that an electroluminescence spectrum of the semiconductor device is an absolute value. Lutes maximum emitted light intensity at either 1, 3 microns wavelength of light or 1, 55 microns optical wavelength.
- the light-emitting semiconductor device further forms a metal-insulator-semiconductor structure in which the dislocation network is disposed near the insulator-semiconductor interface of the metal-insulator-semiconductor structure.
- the light emission of the semiconductor device of the present invention is significantly increased over the conventional semiconductor device described.
- the arrangement of the dislocation network near the insulator-semiconductor interface of the metal-insulator-semiconductor structure is to be understood such that the dislocation network lies in the vicinity of an accumulation zone of majority carriers near the insulator-semiconductor interface.
- an accumulation zone is formed in the case of a metal insulator-semiconductor (hereinafter also MIS) structure as a result of band bending in the semiconductor material near the insulator-semiconductor interface when a suitable operating voltage is applied. It is based on an attractive potential structure for majority carriers. For example, in the n-type silicon, an electron-attractive potential structure is present at the insulator-semiconductor interface.
- the invention is further based on the finding that by setting suitable pairs of rotation angle and tilt angle dislocation networks at the first boundary surface are formed, which cause a spectrally limited and intense luminescence, which is mainly caused by the emission or the D3 emission depending on the angle pair.
- the D1 luminescence covers the spectral range by 1.55 microns and the D3 luminescence covers the spectral range by 1.3 microns. Due to the simultaneous suppression of competing radiative energy relaxation processes, the quantum efficiency of the light emission increases in the respectively optimized luminescence region, ie either in the region of D1 luminescence or in the region of D3 luminescence.
- absolute maximum of the emitted light intensity refers to the spectral range between 0.7 and 1.2 eV in terms of the intensity comparison with other light emissions, ie it covers the range of the known D-luminescences and the light emissions with energies
- An intensity comparison with light emissions lying between 0.7 and 1.2 eV outside this spectral range plays no part in the definition of the light-emitting semiconductor component of the present invention.
- the dislocation network is located at a distance of 10 to 200 nanometers from the insulator-semiconductor interface. Higher light emission intensities can be achieved when the dislocation network is located at a distance of 20 to 100 nanometers from the insulator-semiconductor interface. The best results to date have been achieved in semiconductor devices where the dislocation network is located at a distance of 30 to 60 nanometers from the insulator-semiconductor interface.
- the light-emitting semiconductor component preferably forms a metal-insulator-semiconductor diode (MIS diode). In this case, a titanium layer is preferably used as the metal layer of the metal-insulator-semiconductor structure. Other metallically conductive materials described in the prior art should also be suitable.
- the thickness of the insulator layer is preferably 2 to 10 nanometers. In an alternative embodiment, the thickness of the insulator layer is 1 to 5 nanometers. The thickness should be selected to allow tunneling of minority carriers from the metal through the insulator into the semiconductor at normal operating voltages.
- the selection of a suitable angle pair plays a major role in the realization of the semiconductor device of the present invention. Numerous pairs of angles have proven to be unsuitable for highlighting the D1 or D3 emission. Preferably, the angle pair is set such that either essentially only the D1 or essentially only the D3 emission in the spectral range between 0.7 and 1.1 eV can be observed in the electroluminescence of the semiconductor component. "Substantially” means: Minor contributions from other luminescences or radiating band-band recombination can often not be prevented, but do not diminish the usability of a particular pair of angles.
- the angle of rotation between 1, 1 ° and 1, 5 ° and the tilt angle between 0.6 ° and 0.7 °.
- the light-emitting semiconductor component of this exemplary embodiment it is possible to clearly emphasize the D1 emission with respect to the emissions D2 to D4 and with respect to the band-band emission line at 1.1 eV. To this Way, the spectral width of the electroluminescence of the semiconductor device is significantly reduced. In addition, due to the suppression of competing radiative energy relaxation processes, the quantum efficiency of light emission in the region of D1 luminescence increases.
- the angle of rotation is 1, 3 °.
- the tilt angle is 0.64 °.
- the angle of rotation is 1, 3 ° and the tilt angle 0.64 °.
- the first and second silicon layers are preferably formed by two silicon wafers with (IOO) surfaces.
- the angle of rotation and the tilt angle can be manufactured and determined with an accuracy of at least 0.1 °.
- the angle of rotation between 8.9 ° and 9.1 ° and the tilt angle between 0.1 ° and 0.3 °.
- This embodiment also succeeds in producing a dislocation network at the first interface which causes intense luminescence, predominantly caused by the D1 emission.
- the angle of rotation is preferably 9.0 °. More preferably, the tilt angle is 0.2 °. Particularly preferably, the angle of rotation is 9.0 ° and the tilt angle is 0.2 °.
- the rotation angle is between see 8.1 and 8.3 ° and the tilt angle between 0.1 ° and 0.3 °.
- the surfaces are preferably connected by means of a wafer bonding method.
- dislocation networks can be made by means of plastic deformation, cf. the works of Kveder quoted at the beginning.
- An alternative is the generation of misfit dislocations upon deposition of layers with different lattice constants, such as silicon germanium layers on a silicon substrate.
- Dislocation networks can also be created by implantation of ions and subsequent annealing steps. This can result in perfect or imperfect dislocation loops or rod-like defects.
- wafer bonding offers the advantage of precisely setting the turning and tilting angles, thus producing particularly regular and well reproducible dislocation networks.
- the second axis defining the tilt of the first and second silicon layers to each other is parallel or approximately parallel to a ⁇ 110> direction of the wafers.
- Preferred embodiments of the semiconductor light emitting device of the present invention are embodied as a light emitting diode or a laser diode. This includes, in particular, a suitable contacting of the p and n regions, which can be applied by conventional methods. As is known, the production of a laser diode requires the additional creation of a resonator, which succeeds, for example, by mirroring the substrate edges or alternatively the substrate surfaces.
- a further aspect of the invention resides in the use of a silicon substrate which has a first interface between a first and a second silicon layer, whose ideal imaginary grating structures are rotated relative to one another about a first axis perpendicular to the substrate surface by an angle of rotation and about a second parallel to the second Substrate surface tilted by a tilt angle, such that in the region of the interface is an offset network, the angle of rotation and tilt angle are chosen so that an electroluminescence of the semiconductor device an absolute maximum of the emitted light intensity at either 1, 3 micrometers wavelength of light or 1, 55 micrometers optical wavelength, for producing a light-emitting semiconductor device according to the first aspect of the invention or one of the embodiments of such a semiconductor device described herein. Further details and embodiments of the present invention will be explained below with reference to the figures. Show it:
- FIG. 1 shows a perspective view of two silicon wafers for explaining the geometric conditions in the wafer bonding method.
- FIG. 2 shows, in four subfigures a) to d), essential process steps in the production of the substrate for an exemplary embodiment of a light emitter according to the invention.
- FIG. 3 shows a transmission electron micrograph of a dislocation network in a light emitter according to the invention.
- FIG. 4 shows photoluminescence spectra of a light emitter according to the invention at different temperatures.
- Fig. 5 shows luminescence spectra of two further dislocation networks at alternative angle pairs.
- FIG. 6 shows a schematic band diagram of an embodiment of an MIS light-emitting diode according to an exemplary embodiment of the invention.
- FIG. 7 shows a schematic band diagram of an embodiment of an MIS light-emitting diode according to a further exemplary embodiment of the invention.
- Fig. 8 shows electroluminescence spectra of an embodiment of an MIS light emitting diode according to the invention at different current levels.
- FIG. 9 shows a current-voltage characteristic of the embodiment of FIG. 8.
- FIG. 1 shows in a schematic three-dimensional view two wafers 100 and 102 which are used for the production of the substrate of a light emitter according to the invention.
- wafer 100 is a (IOO) silicon wafer
- hydrogen ions or helium ions are introduced into the implanted layer 104 extends over a depth of about 200 nm from the substrate surface.
- the wafer 102 is also a (IOO) silicon wafer. Unlike the wafer 100, however, its two surfaces 106 and 108 are not parallel to each other, but are tilted by a small angle ⁇ KIPP to each other. In English, this tilting is referred to as "ti It.” The axis about which the surface 108 is tilted to the surface 106 is parallel to the ⁇ 110> direction and indicated by a dashed line 110.
- a dashed line 1 18 shows a rotation axis perpendicular to the substrate surface 106.
- the rotation angle ⁇ DREH 1, 3 ° and the tilt angle ⁇ KIPP is 0.64 °.
- the angles refer to a scale between 0 and 360 °. However, it can be assumed that further combinations of rotation and tilt angle lead to a similarly narrow and intense light emission in the area of the D1 luminescence.
- FIG. 2 shows essential process steps in the production of the substrate of a light emitter according to the invention.
- first process step is hydrogen with a dose of 1 x 10 16 - cm "2 implanted in the wafer 100 1 x 10 17 to give rise to the near-surface layer 104 This is shown in Figure 2a).
- the near-surface layer 104 is separated from the rest of the substrate 100 in a later method step, the result of which is shown in FIG. 2d) (so-called "smart-cut" method).
- the prepared wafer 100 with the surface layer 104 is applied at the bottom to the wafer 102, whose surface 108 comes into contact with the layer 104. Due to atomic dimensions of clean and smooth surfaces, substrates 100 and 102 adhere to each other, with intermolecular forces such as van der Waals forces or hydrogen bonds causing adhesion. By a subsequent temperature treatment of the resulting substrate 200, the adhesion is enhanced. At the same time, the layer 105 is blown off the substrate 200 with the aid of a smart-cut process.
- FIG. 2 d) shows as a result the thus prepared substrate 200, which is formed from the wafer 102 and the layer 104 of the wafer 100.
- the interface between the layer 104 and the layer 102 is at a distance from the substrate surface which is greater than 200 nm.
- the described smart-cut method can be applied.
- alternative methods are known which allow separation of the substrate 100 from the layer 104.
- the layer 104 can be formed with any thickness, whereby the interface with the substrate 102 gets a freely selectable depth. For example, it is conceivable that, depending on the doping profile, a greater distance of the barrier layer from the interface with the dislocation network has a positive influence on the excess charge carrier concentration and thus on the intensity or quantum efficiency of the light emission.
- Figure 3 shows a transmission electron micrograph of a dislocation network at the interface between the layer 104 and the wafer 100 of the substrate 200.
- Recognizable is a regular pattern of dark offset dislocation lines having a distance d of about 20 nm from each other.
- the dislocation network shown in Figure 3 is formed using a rotation angle ⁇ DREH VO ⁇ 1, 3 ° and a tilt angle ⁇ KIPP of 0.64 °.
- Figure 4 shows photoluminescence spectra of the substrate 200 when excited with light of energy above the band edge of silicon. Shown are three photoluminescence spectra in the spectral range between about 0.75 eV and 1.3 eV. A solid line spectrum was recorded at a substrate temperature of 80K. A spectrum indicated by a dashed line was taken at a substrate temperature of 140K. A spectrum shown by a dotted line was recorded at a temperature of 290K. Shown is the photoluminescence intensity in any linear units as a function of the energy of the emitted photons. It is clearly recognizable that the luminescence spectrum has only one clearly recognizable luminescence peak at all three temperatures which can be unambiguously identified as D1 luminescence on the basis of its energetic position.
- the maximum of the D1 luminescence is at room temperature at an energy of just under 0.8 eV, ie exactly in the spectral range of particular interest for optoelectronic applications.
- the luminescence spectrum shows an extremely low asymmetry of the line shape at room temperature, which suggests only minimal contributions of the D2 luminescence to the light emission. At lower temperatures, D2 luminescence is imperceptible.
- band-band recombination does not appreciably contribute to the luminescence of the substrate.
- Such a light-emitting diode can be incorporated directly into the silicon-based semiconductor technology.
- the pn junction is Preferably arranged so that the dislocation network, in the presence of multiple interfaces, the dislocation networks, outside of a form in Flußpolung of the semiconductor device barrier layer or lie.
- the maximum of the D1 luminescence is about 0.36 eV below the energy of the silicon band gap. This distance also remains constant with increasing temperature at which, as is known, the energy of the band gap decreases.
- FIG. 5 shows luminescence spectra of two further dislocation networks with alternative angle pairs.
- FIG. 5a shows a luminescence spectrum of a dislocation network which results from setting a rotation angle of 9 ° and a tilt angle of 0.2 °. The spectrum was recorded at a temperature of 80K. Even at this angle, the D1 luminescence dominates, although not as clearly as in the case of the example of FIG. 4.
- FIG. 5b shows a luminescence spectrum of an offset network which results from setting a rotation angle of 8.2 ° and a tilt angle of 0.2 °.
- D3 emission dominates the luminescence spectrum recorded at 80K.
- Contributions of other luminescences such as D1 emission and band-band emission are comparatively small. With this angle combination, therefore, it is possible to produce a light-emitting semiconductor component which emits predominantly at 1.3 micrometers of optical wavelength.
- FIG. 6 shows a schematic band diagram of an MIS light-emitting diode 600 according to an embodiment of the invention.
- the diagram of FIG. 6 corresponds to a light-emitting semiconductor component in the form of an MIS diode with a semiconductor region S formed by an n-doped silicon substrate.
- the insulator region I which is formed, for example, of a silicon dioxide layer a few nanometers thick, is followed by a metal layer M, which is made of titanium, for example.
- the metal layer M and the substrate formed by the semiconductor region S have contact structures (not shown here) which serve to apply an electrical voltage to the component.
- the graph of Fig. 6 has a Y axis on which the energy is plotted in arbitrary linear units.
- the depiction is purely schematic in nature and does not accurately reflect actual amounts of energy or relationships between different energies.
- the band diagram of the semiconductor region S is known to have a band gap of approximately 1.1 eV between the upper edge of the valence band with the energy E v and the lower edge of the conduction band with the energy E c . Due to its n-doping, the Fermi energy E F of the semiconductor material is closer to the conduction band than to the valence band.
- this accumulation zone 604 corresponds to the region of curved band edge profiles in the semiconductor region S close to the interface 602.
- the curve of the lower band edge bent toward lower energies represents an attractive potential for electrons.
- the dislocation network D is arranged in this area and leads - possibly after a non-radiative energy relaxation of the holes to the valence band upper edge - to an effective capture of charge carriers and for the radiative recombination of electrons and holes with emission of photons of the respectively dominant luminescence of the dislocation network, ie either the D1 luminescence or the D3 luminescence.
- FIG. 7 shows a schematic band diagram of an exemplary embodiment of an MIS light-emitting diode 700 according to a further exemplary embodiment of the invention.
- the diagram of FIG. 7 shows an alternative embodiment in which, in comparison with FIG. 6, p-doped silicon in the semiconductor region S is used instead of n-doped silicon. Otherwise, the structure of the semiconductor device and the arrangement of the dislocation network D according to the example explained with reference to FIG. 6.
- an accumulation zone 704 is created for holes at the interface 702 between the insulator region and the semiconductor region S.
- a tunnel current of electrons occurring during operation through the insulator region I also leads to this Case of a radiative recombination with emission of photons of D1 or D3 luminescence, depending on the selected pair of rotation and tilt angle.
- FIG. 8 shows a diagram in which the electroluminescence intensity of an MIS light-emitting diode structure according to the example described in connection with FIG. 6 is plotted as a function of the wavelength at different current intensities.
- the silicon substrate is configured for D1 luminescence.
- Fig. 9 shows a current-voltage characteristic of the embodiment of Fig. 8.
- the LED shows a typical diode characteristic which increases exponentially above about 0.5 Volts. The characteristic was recorded at a temperature of 300 Kelvin.
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Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE102006026457 | 2006-05-31 | ||
DE102006047071A DE102006047071A1 (de) | 2006-05-31 | 2006-09-26 | Versetzungsbasierter Lichtemitter mit MIS-Struktur |
PCT/EP2007/055256 WO2007138078A1 (de) | 2006-05-31 | 2007-05-30 | Versetzungsbasierter lichtemitter mit mis-struktur |
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EP2030252A1 true EP2030252A1 (de) | 2009-03-04 |
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EP07729669A Withdrawn EP2030252A1 (de) | 2006-05-31 | 2007-05-30 | Versetzungsbasierter lichtemitter mit mis-struktur |
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EP (1) | EP2030252A1 (de) |
DE (1) | DE102006047071A1 (de) |
WO (1) | WO2007138078A1 (de) |
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DE102009000333A1 (de) * | 2009-01-20 | 2010-07-22 | Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik | Thermoelektrisches Halbleiterbauelement |
WO2013164659A1 (en) * | 2012-04-30 | 2013-11-07 | Tubitak | Methods for producing new silicon light source and devices |
US11011377B2 (en) | 2019-04-04 | 2021-05-18 | International Business Machines Corporation | Method for fabricating a semiconductor device |
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TW529188B (en) * | 2002-04-26 | 2003-04-21 | Univ Nat Taiwan | Metal oxide silicon structure with increased illumination efficiency by using nanometer structure |
US6905977B2 (en) * | 2003-03-26 | 2005-06-14 | National Taiwan University | Method of improving electroluminescent efficiency of a MOS device by etching a silicon substrate thereof |
US7880189B2 (en) * | 2005-05-03 | 2011-02-01 | IHP GmbH-Innovations for High Performance Microelectronics/ Leibniz-Institut für innovative Mikroelektronik | Dislocation-based light emitter |
-
2006
- 2006-09-26 DE DE102006047071A patent/DE102006047071A1/de not_active Ceased
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2007
- 2007-05-30 WO PCT/EP2007/055256 patent/WO2007138078A1/de active Application Filing
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WO2007138078A1 (de) | 2007-12-06 |
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