EP1999804A2 - Opto-electronic devices exhibiting enhanced efficiency - Google Patents
Opto-electronic devices exhibiting enhanced efficiencyInfo
- Publication number
- EP1999804A2 EP1999804A2 EP07748871A EP07748871A EP1999804A2 EP 1999804 A2 EP1999804 A2 EP 1999804A2 EP 07748871 A EP07748871 A EP 07748871A EP 07748871 A EP07748871 A EP 07748871A EP 1999804 A2 EP1999804 A2 EP 1999804A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- organic
- opto
- ammonium salt
- cathode
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 41
- 230000001747 exhibiting effect Effects 0.000 title description 2
- 150000003863 ammonium salts Chemical class 0.000 claims abstract description 60
- 239000011368 organic material Substances 0.000 claims abstract description 47
- 239000000203 mixture Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 150000001449 anionic compounds Chemical class 0.000 claims abstract description 18
- 229910001412 inorganic anion Inorganic materials 0.000 claims abstract description 18
- 150000002891 organic anions Chemical class 0.000 claims abstract description 18
- -1 postassium Chemical compound 0.000 claims description 146
- 239000000463 material Substances 0.000 claims description 21
- 239000002608 ionic liquid Substances 0.000 claims description 13
- 238000002347 injection Methods 0.000 claims description 12
- 239000007924 injection Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229920000553 poly(phenylenevinylene) Polymers 0.000 claims description 6
- 229910052791 calcium Inorganic materials 0.000 claims description 5
- 239000011575 calcium Substances 0.000 claims description 5
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 claims description 5
- 229920002098 polyfluorene Polymers 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- 229920000265 Polyparaphenylene Polymers 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 229920000123 polythiophene Polymers 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- HXSCFGJKMYGCTP-UHFFFAOYSA-M 4-methylbenzenesulfonate;methyl-tris(2-methylpropyl)azanium Chemical compound CC1=CC=C(S([O-])(=O)=O)C=C1.CC(C)C[N+](C)(CC(C)C)CC(C)C HXSCFGJKMYGCTP-UHFFFAOYSA-M 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
- MUBKMWFYVHYZAI-UHFFFAOYSA-N [Al].[Cu].[Zn] Chemical compound [Al].[Cu].[Zn] MUBKMWFYVHYZAI-UHFFFAOYSA-N 0.000 claims description 2
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 2
- XQGNTZIWRWMCES-UHFFFAOYSA-M bis(2,4,4-trimethylpentyl)phosphinate;trihexyl(tetradecyl)azanium Chemical compound CC(C)(C)CC(C)CP([O-])(=O)CC(C)CC(C)(C)C.CCCCCCCCCCCCCC[N+](CCCCCC)(CCCCCC)CCCCCC XQGNTZIWRWMCES-UHFFFAOYSA-M 0.000 claims description 2
- LRESCJAINPKJTO-UHFFFAOYSA-N bis(trifluoromethylsulfonyl)azanide;1-ethyl-3-methylimidazol-3-ium Chemical compound CCN1C=C[N+](C)=C1.FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F LRESCJAINPKJTO-UHFFFAOYSA-N 0.000 claims description 2
- ZFIVWLTZVMPSMP-UHFFFAOYSA-N cyanoiminomethylideneazanide trihexyl(tetradecyl)azanium Chemical compound [N-](C#N)C#N.C(CCCCC)[N+](CCCCCCCCCCCCCC)(CCCCCC)CCCCCC ZFIVWLTZVMPSMP-UHFFFAOYSA-N 0.000 claims description 2
- JPCLQOXFHOQCOW-UHFFFAOYSA-M decanoate;trihexyl(tetradecyl)azanium Chemical compound CCCCCCCCCC([O-])=O.CCCCCCCCCCCCCC[N+](CCCCCC)(CCCCCC)CCCCCC JPCLQOXFHOQCOW-UHFFFAOYSA-M 0.000 claims description 2
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
- 238000013086 organic photovoltaic Methods 0.000 claims description 2
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- WAADFDOGNWGAHE-UHFFFAOYSA-M trihexyl(tetradecyl)azanium;bromide Chemical compound [Br-].CCCCCCCCCCCCCC[N+](CCCCCC)(CCCCCC)CCCCCC WAADFDOGNWGAHE-UHFFFAOYSA-M 0.000 claims description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 claims 4
- 239000010410 layer Substances 0.000 description 92
- 150000003254 radicals Chemical class 0.000 description 22
- 229920000642 polymer Polymers 0.000 description 17
- 238000000034 method Methods 0.000 description 12
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 12
- 125000003118 aryl group Chemical group 0.000 description 10
- 125000000524 functional group Chemical group 0.000 description 9
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 9
- 239000011149 active material Substances 0.000 description 8
- 125000000217 alkyl group Chemical group 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 7
- 125000004122 cyclic group Chemical group 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 125000005843 halogen group Chemical group 0.000 description 6
- 238000005286 illumination Methods 0.000 description 6
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 6
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 230000005525 hole transport Effects 0.000 description 5
- 229920000548 poly(silane) polymer Polymers 0.000 description 5
- 230000032258 transport Effects 0.000 description 5
- 229920000144 PEDOT:PSS Polymers 0.000 description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical group [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 125000003277 amino group Chemical group 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 125000001188 haloalkyl group Chemical group 0.000 description 4
- 125000005842 heteroatom Chemical group 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910052760 oxygen Chemical group 0.000 description 4
- 239000001301 oxygen Chemical group 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- 229910052711 selenium Inorganic materials 0.000 description 4
- 239000011669 selenium Chemical group 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 125000002252 acyl group Chemical group 0.000 description 3
- 125000003158 alcohol group Chemical group 0.000 description 3
- 125000003172 aldehyde group Chemical group 0.000 description 3
- 125000003342 alkenyl group Chemical group 0.000 description 3
- 125000000304 alkynyl group Chemical group 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 150000001408 amides Chemical class 0.000 description 3
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 3
- 125000002843 carboxylic acid group Chemical group 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 125000001033 ether group Chemical group 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 125000000468 ketone group Chemical group 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
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- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Chemical group 0.000 description 3
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
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- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- 239000002671 adjuvant Substances 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
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- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
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- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
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- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 125000002490 anilino group Chemical group [H]N(*)C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229940027991 antiseptic and disinfectant quinoline derivative Drugs 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 1
- 125000000732 arylene group Chemical group 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 125000003828 azulenyl group Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 125000005998 bromoethyl group Chemical group 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 description 1
- 150000001716 carbazoles Chemical class 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 125000004775 chlorodifluoromethyl group Chemical group FC(F)(Cl)* 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 125000004210 cyclohexylmethyl group Chemical group [H]C([H])(*)C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- GZYYOTJXMDCAJN-UHFFFAOYSA-N cyclohexyloxymethoxycyclohexane Chemical compound C1CCCCC1OCOC1CCCCC1 GZYYOTJXMDCAJN-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 125000002573 ethenylidene group Chemical group [*]=C=C([H])[H] 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 125000002485 formyl group Chemical group [H]C(*)=O 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-M hydrogensulfate Chemical compound OS([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-M 0.000 description 1
- 125000004029 hydroxymethyl group Chemical group [H]OC([H])([H])* 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 150000004693 imidazolium salts Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- SKWCWFYBFZIXHE-UHFFFAOYSA-K indium acetylacetonate Chemical compound CC(=O)C=C(C)O[In](OC(C)=CC(C)=O)OC(C)=CC(C)=O SKWCWFYBFZIXHE-UHFFFAOYSA-K 0.000 description 1
- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- KKFHAJHLJHVUDM-UHFFFAOYSA-N n-vinylcarbazole Chemical class C1=CC=C2N(C=C)C3=CC=CC=C3C2=C1 KKFHAJHLJHVUDM-UHFFFAOYSA-N 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000006250 one-dimensional material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 125000003538 pentan-3-yl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-M phenolate Chemical compound [O-]C1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-M 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 229940083082 pyrimidine derivative acting on arteriolar smooth muscle Drugs 0.000 description 1
- 150000003230 pyrimidines Chemical class 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 150000003248 quinolines Chemical class 0.000 description 1
- 150000003252 quinoxalines Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical compound [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 description 1
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 1
- ILMRJRBKQSSXGY-UHFFFAOYSA-N tert-butyl(dimethyl)silicon Chemical group C[Si](C)C(C)(C)C ILMRJRBKQSSXGY-UHFFFAOYSA-N 0.000 description 1
- 125000002813 thiocarbonyl group Chemical group *C(*)=S 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000006163 transport media Substances 0.000 description 1
- 125000005259 triarylamine group Chemical group 0.000 description 1
- 125000003866 trichloromethyl group Chemical group ClC(Cl)(Cl)* 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/20—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/135—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising mobile ions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/841—Applying alternating current [AC] during manufacturing or treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the present invention relates generally to the field of electro-optics, and more particularly to organic electro-optic devices and methods for making the same. More particularly the invention relates to organic electro-optic devices which operate with enhanced efficiency relative to currently known devices.
- organic electro-optic devices organic light-emitting diodes (OLEDs)
- OLEDs organic light-emitting diodes
- Another class of organic electro-optic devices photovoltaic devices, devices which convert light energy into electrical energy, have attracted similar interest.
- said cathode is in contact with at least one organic ammonium salt.
- R 1 -R 4 are independently at each occurrence a C1-C 20 aliphatic radical, a C 3 - C 2 o cycloaliphatic radical, or a Cj-C 2O aromatic radical, and wherein X " is selected from the group consisting of monovalent inorganic anions, monovalent organic anions, polyvalent inorganic anions, polyvalent organic anions, and mixtures thereof.
- the invention provides an OLED device comprising
- R'-R 4 are independently at each occurrence a C 1 -C 20 aliphatic radical, a C3- C 2 o cycloaliphatic radical, or a C 3 -C 20 aromatic radical, and wherein X " is selected from the group consisting of monovalent inorganic anions, monovalent organic anions, polyvalent inorganic anions, polyvalent organic anions, and mixtures thereof; said ammonium salt being disposed between the opto-electrtronically active organic material and the cathode, said ammonium salt being in contact with the cathode.
- Figure 1 is a schematic representation of a first opto-electronic device structure comprising a cathode in contact with an organic ammonium salt in accordance with embodiments of the present invention
- Figure 2 is a schematic representation of a second opto-electronic device structure comprising an organic ammonium salt and a charge injection material layer in accordance with embodiments of the present invention
- Figure 3 is a schematic representation of a third opto-electronic device structure having a layer comprising an organic ammonium salt in accordance with embodiments of the present invention
- Figure 4 shows the a plot of Efficiency versus Current Density for the OLED device of Comparative Example 1 (CEx.1) a device comprising a light emitting polymer (LEP) as the opto-electronically active material and an aluminum (Al) as the cathode;
- LEP light emitting polymer
- Al aluminum
- Figure 5 illustrates the I- V behavior of OLED device of Example 1 under forward and reverse bias
- Figure 6 presents a plot of Efficiency as a function of Current Density of the OLED of Example 1 ;
- Figure 7 shows a plot of Current versus Bias Voltage of an exemplary embodiment of the present invention measured under illumination and in the dark.
- aromatic radical refers to an array of atoms having a valence of at least one comprising at least one aromatic group.
- the array of atoms having a valence of at least one comprising at least one aromatic group may include heteroatoms such as nitrogen, sulfur, selenium, silicon and oxygen, or may be composed exclusively of carbon and hydrogen.
- aromatic radical includes but is not limited to phenyl, pyridyl, furanyl, thienyl, naphthyl, phenylene, and biphenyl radicals.
- the aromatic radical contains at least one aromatic group.
- the aromatic radical may also include nonaromatic components.
- a benzyl group is an aromatic radical which comprises a phenyl ring (the aromatic group) and a methylene group (the nonaromatic component).
- a tetrahydronaphthyl radical is an aromatic radical comprising an aromatic group (CeH 3 ) fused to a nonaromatic component -(CHz) 4 -.
- aromatic radical is defined herein to encompass a wide range of functional groups such as alkyl groups, alkenyl groups, alkynyl groups, haloalkyl groups, haloaromatic groups, conjugated dienyl groups, alcohol groups, ether groups, aldehyde groups, ketone groups, carboxylic acid groups, acyl groups (for example carboxylic acid derivatives such as esters and amides), amine groups, nitro groups, and the like.
- the 4-methylphenyl radical is a C 7 aromatic radical comprising a methyl group, the methyl group being a functional group which is an alkyl group.
- the 2-nitrophenyl group is a Ce aromatic radical comprising a nitro group, the nitro group being a functional group.
- Aromatic radicals include halogenated aromatic radicals such as 4-trifluoromethylphenyl, hexafluoroisopropylidenebis(4-phen-l-yloxy) (i.e., ⁇ OPhC(CF 3 ) 2 PhO-), 4- chloromethylphen-1-yl, 3-trifluorovinyl-2-thienyl, 3-trichloromethylphen-l-yl (i.e., 3- CCl 3 Ph-), 4-(3-bromoprop-l-yl)phen-l-yl (i.e., 4-BrCH 2 CH 2 CH 2 Ph-), and the like.
- aromatic radicals include 4-allyloxyphen-l-oxy, 4-aminophen-l- yl (i.e., 4-H 2 NPh-), 3-aminocarbonylphen-l-yl (i.e., NH 2 COPh-), 4-benzoylphen-l-yl, dicyanomethylidenebis(4-phen-l-yloxy) (i.e., -OPhC(CN) 2 PhO-), 3-methylphen-l-yl, methylenebis(4-phen-l-yloxy) (i.e., -OPhCH 2 PhO-), 2-ethylphen-l-yl, phenylethenyl, 3-formyl-2-thienyI, 2-hexyl-5-furanyl, hexamethylene-l,6-bis(4-phen-l-yloxy) (i.e., — OPh(CH 2 ) 6 PhO-), 4-hydroxymethylphen-l-yl (i.e
- a C 3 - Qo aromatic radical includes aromatic radicals containing at least three but no more than 10 carbon atoms.
- the aromatic radical 1-imidazolyl (C 3 H 2 N 2 - ) represents a C3 aromatic radical.
- the benzyl radical (C 7 H 7 -) represents a C 7 aromatic radical.
- cycloaliphatic radical refers to a radical having a valence of at least one, and comprising an array of atoms which is cyclic but which is not aromatic. As defined herein a “cycloaliphatic radical” does not contain an aromatic group.
- a “cycloaliphatic radical” may comprise one or more noncyclic components.
- a cyclohexylmethyl group (CeHnCH 2 -) is an cycloaliphatic radical which comprises a cyclohexyl ring (the array of atoms which is cyclic but which is not aromatic) and a methylene group (the noncyclic component).
- the cycloaliphatic radical may include heteroatoms such as nitrogen, sulfur, selenium, silicon and oxygen, or may be composed exclusively of carbon and hydrogen.
- cycloaliphatic radical is defined herein to encompass a wide range of functional groups such as alkyl groups, alkenyl groups, alkynyl groups, haloalkyl groups, conjugated dienyl groups, alcohol groups, ether groups, aldehyde groups, ketone groups, carboxylic acid groups, acyl groups (for example carboxylic acid derivatives such as esters and amides), amine groups, nitro groups, and the like.
- the 4-methylcycIopent- l-yl radical is a C 6 cycloaliphatic radical comprising a methyl group, the methyl group being a functional group which is an alkyl group.
- the 2-nitrocyclobut-l-yl radical is a C 4 cycloaliphatic radical comprising a nitro group, the nitro group being a functional group.
- a cycloaliphatic radical may comprise one or more halogen atoms which may be the same or different. Halogen atoms include, for example; fluorine, chlorine, bromine, and iodine.
- Cycloaliphatic radicals comprising one or more halogen atoms include 2-trifluoromethylcyclohex- 1 - yl, 4-bromodifluoromethylcyclooct-l-yl, 2-chlorodifluoromethylcyclohex-l-yl, he ⁇ afluoroisopropylidene-2,2-bis (cyclohex-4-yl) (i.e., -C 6 HiOC(CFs) 2 C 6 HiO-), 2- chloromethylcyclohex-1-yl, 3- difluoromethylenecyclohex-1-yl, 4- trichloromethylcyclohex-1-yloxy, 4-bromodichloromethylcyclohex-l-ylthio, 2- bromoethylcyclopent-1-yl, 2-bromopropylcyclohex-l-yloxy (e.g.,
- cycloaliphatic radicals include 4-allyloxycyclohex-l -yl, 4-aminocyclohex-l-yl (i.e., H 2 NCoHiO-), 4- aminocarbonylcyclopent-1-yl (i.e., NH 2 COC 5 Hg-), 4-acetyloxycyclohex-l-yl, 2,2- dicyanoisopropylidenebis(cyclohex-4-yloxy) (i.e., -OCeHi O C(CN) 2 C 6 H 1 OO-), 3- methylcyclohex-1-yl, methylenebis(cyclohex-4-yloxy) (i.e., -OCeHiOCH 2 CeHiOO-), 1-ethylcyclobut-l-yl, cyclopropylethenyl, 3-formyl-2-terahydrofuranyl, 2-hexyl-5
- a C 3 - Cio cycloaliphatic radical includes cycloatiphatic radicals containing at least three but no more than 10 carbon atoms.
- the cycloaliphatic radical 2-tetrahydrofuranyl (C 4 H 7 O-) represents a C 4 cycloaliphatic radical.
- the cyclohexylmethyl radical (CeHnCH 2 -) represents a C 7 cycloaliphatic radical.
- aliphatic radical refers to an organic radical having a valence of at least one consisting of a linear or branched array of atoms which is not cyclic. Aliphatic radicals are defined to comprise at least one carbon atom. The array of atoms comprising the aliphatic radical may include heteroatoms such as nitrogen, sulfur, silicon, selenium and oxygen or may be composed exclusively of carbon and hydrogen.
- aliphatic radical is defined herein to encompass, as part of the "linear or branched array of atoms which is not cyclic" a wide range of functional groups such as alkyl groups, alkenyl groups, alkynyl groups, haloalkyl groups , conjugated dienyl groups, alcohol groups, ether groups, aldehyde groups, ketone groups, carboxylic acid groups, acyl groups (for example carboxylic acid derivatives such as esters and amides), amine groups, nitro groups, and the like.
- functional groups such as alkyl groups, alkenyl groups, alkynyl groups, haloalkyl groups , conjugated dienyl groups, alcohol groups, ether groups, aldehyde groups, ketone groups, carboxylic acid groups, acyl groups (for example carboxylic acid derivatives such as esters and amides), amine groups, nitro groups, and the like.
- the 4-methylpent-l -yl radical is a C 6 aliphatic radical comprising a methyl group, the methyl group being a functional group which is an alkyl group.
- the 4-nitrobut- 1 -yl group is a C 4 aliphatic radical comprising a nitro group, the nitro group being a functional group.
- An aliphatic radical may be a haloalkyl group which comprises one or more halogen atoms which may be the same or different. Halogen atoms include, for example; fluorine, chlorine, bromine, and iodine.
- Aliphatic radicals comprising one or more halogen atoms include the alkyl halides trifluoromethyl, bromodifluoromethyl, chlorodifluoromethyl, hexafluoroisopropylidene, chloromethyl, difluorovinylidene, trichloromethyl, bromodichloromethyl, bromoethyl, 2-bromotrimethylene (e.g., -CH 2 CHBrCH 2 -), and the like.
- aliphatic radicals include allyl, aminocarbonyl (i.e., — CONH 2 ), carbonyl, 2,2-dicyanoisopropylidene (i.e., -CH 2 C(CN) 2 CH 2 -), methyl (i.e., - CH 3 ), methylene (i.e., -CH 2 -), ethyl, ethylene, formyl (i.e.,-CHO), hexyl, hexamethylene, hydroxymethyl (i.e., -CH 2 OH), mercaptomethyl (i.e., -CH 2 SH), methylthio (i.e., -SCH 3 ), methylthiomethyl (i.e., -CH 2 SCH 3 ), methoxy, methoxycarbonyl (i.e., CH 3 OCO-) , nitromethyl (i.e., -CH 2 NO 2 ), thiocarbonyl, trimethylsilyl (
- a Ci - Cio aliphatic radical contains at least one but no more than 10 carbon atoms.
- a methyl group i.e., CH 3 -
- a decyl group i.e., CH 3 (CH 2 )Q-
- a Ci 0 aliphatic radical is an example of a Ci 0 aliphatic radical.
- an organic opto-electronic device comprising a cathode comprising at least one zero-valent metal; an anode; and an opto- electronically active organic material disposed between said cathode and said anode; wherein said cathode is in contact with at least one organic ammonium salt, hi one embodiment, the cathode is in contact with at least one organic ammonium salt having structure (I)
- R 1 -R 4 are independently at each occurrence a Ci-C 20 aliphatic radical, a C 3 - C 20 cycloaliphatic radical, or a C 3 -Q 20 aromatic radical, and wherein X " is selected from the group consisting of monovalent inorganic anions, monovalent organic anions, polyvalent inorganic anions, polyvalent organic anions, and mixtures thereof.
- the cathode serves the purpose of injecting negative charge carriers (electrons) into the electro-active organic layer.
- the cathode comprises metals, such as K, Li, Na, Cs, Mg, Ca, Sr, Ba, Al, Ag, Au, In, Sn, Zn, Zr, Sc, Y, elements of the lanthanide series, alloys thereof, or mixtures thereof.
- Suitable alloy materials for the manufacture of cathode layer are Ag-Mg, Al-Li, In- Mg, Al-Ca, and Al-Au alloys.
- the cathode comprises a zero valent metal .
- the cathode comprises a zero valent metal selected from the group consisting of aluminum, copper, zinc, silver, nickel, palladium, platinum, iridium, lithium, sodium, potassium, calcium, barium, strontium, and mixtures of two or more of the foregoing.
- the cathode may be deposited on the underlying element by physical vapor deposition, chemical vapor deposition, sputtering, or like technique.
- the cathode is transparent.
- transparent means allowing at least 50 percent, commonly at least 80 percent, and more commonly at least 90 percent, of light in the visible wavelength range to be transmitted through at an incident angle of less than or equal to 10 degrees. This means that a device or article, for example a transparent cathode, described as being “transparent” will transmit at least 50 percent of light in the visible range which impinges on the device or article at an incident angle of about 10 degrees or less.
- the anode generally comprises a material having a bulk conductivity of at least 100 Siemens per centimeter, as measured by a four-point probe technique.
- ITO Indium tin oxide
- Other materials which may be utilized as the anode layer include tin oxide, indium oxide, zinc oxide, indium zinc oxide, zinc indium tin oxide, antimony oxide, and mixtures thereof.
- the cathode and the anode are referred to as "conductive layers".
- the conductive layers may be deposited on the underlying element by physical vapor deposition, chemical vapor deposition, sputtering, or like processes, or a combination of two or more of the foregoing techniques may be employed.
- the thickness of each conductive layer may vary independently but is generally in the range from about 10 nanometers to about 500 nanometers.
- the thicknesses of the conductive layers fall within a range from about 10 nanometers to about 500 nanometers in an embodiment, from about 10 nanometers to about 200 nanometers in another embodiment, and from about 50 nanometers to about 200 nanometers in still another embodiment.
- a thin, substantially transparent layer of a metal for example, having a thickness of less than about 50 nanometers, can also be used as a suitable conductive layer.
- Suitable exemplary metals include silver, copper, tungsten, nickel, cobalt, iron, selenium, germanium, gold, platinum, aluminum, or mixtures of two or more of the foregoing, and metal alloys comprising one or more of the foregoing.
- the anode is disposed on a substantially transparent substrate, such a glass substrate of a an organic polymeric substrate.
- the opto-electronically active material is disposed as a layer and serves as the transport medium for both holes and electrons in the opto-electronic device.
- the holes and electrons in the opto-electronically active layer combine to form excited state species which emit EM radiation in the visible range.
- a reversal of the voltage bias used to transform electrical energy into light energy in an OLED converts the OLED into a photovoltaic device which transforms light energy into electrical energy.
- a photovoltaic device holes and electrons are produced by the combined effect of light incident upon the opto- electronically active material, and the applied voltage bias. The holes and electrons so produced then result in a flow of electric current.
- the opto-electronic devices of the present invention are characterized by the ability to convert electrical energy into light energy (OLEDs), and upon reversal of the voltage bias, to convert light energy into electrical energy (photovoltaic devices (PVs)).
- Opto-electronically active organic materials are typically chosen to electroluminesce.in the desired wavelength range.
- the opto-electronically active material is typically disposed as an opto- electronically active layer within the opto-electronic device, said layer being disposed between the conductive layers of the device.
- the thickness of the opto-electronically active layer is typically from about in the exemplary range of about 10 nanometers to about 300 nanometers.
- the active opto-electronically active material used to form the opto-electronically active layer is an organic material which may be a polymer, a copolymer, a mixture of polymers or copolymers, or lower molecular-weight organic molecules having unsaturated bonds.
- Such materials generally possess a delocalized ⁇ -electron system, which typically enables the polymer chains or organic molecules to support positive and negative charge carriers with relatively high mobility.
- Suitable opto-electronically active polymers are illustrated by poly(n-vinylcarbazole) ("PVK", emitting violet-to-blue light in a wavelength range of from about 380 to about500 nanometers) and poly(n-vinylcarbazole) derivatives; polyfluorene and polyfluorene derivatives such as poly(alkylfluorene), for example poly(9,9-dihexylfluorene) (emitting light in a wavelength range of from about 410 to about 550 nanometers), poly(dioctylfluorene) (wavelength at peak electroluminescent (EL) emission of about 436 nanometers), and poly ⁇ 9,9-bis(3,6-dioxaheptyl) ⁇ fluorene-2,7-diyl ⁇
- polysilanes are linear silicon-backbone polymers substituted with a variety of alkyl and/or aryl groups. Polysilanes are quasi one-dimensional materials with delocalized sigma- conjugated electrons along polymer backbone. Examples of suitable polysilanes include, but are not limited to, poly(di-n-butylsilane), poly(di-n-pentylsilane), poly(di- n-hexylsilane), poly(methylphenylsilane), and poly ⁇ bis(p-butylphenyl)silane ⁇ .
- the polysilanes generally emit light in a wavelength in a range from about 320 nanometers to about 420 nanometers.
- organic materials having molecular weight less than about 5000 grams per mole and comprising one or more aromatic radicals also applicable as light emissive opto-electronically active organic materials.
- An example of such materials is l,3,5-tris ⁇ N-(4-diphenylaminophenyl) phenylamino ⁇ benzene, which emits light in the wavelength range of from about 380 to about 500 nanometers.
- the light emissive organic layer also may comprise still lower molecular weight organic molecules, such as phenylanthracene, tetraarylethene, coumarin, rubrene, tetraphenylbutadiene, anthracene, perylene, coronene, their derivatives, or a combination of two or more of the foregoing. These materials generally emit light having maximum wavelength of about 520 nanometers. Still other advantageous materials are the low molecular-weight metal organic complexes such as aluminum-, gallium-, and indium-acetylacetonate, which emit light in a wavelength range of from about 415 to about 457 nanometers.
- Suitable aluminum compounds include aluminum (picolymethylketone)-bis ⁇ 2,6-di(t-butyl)phenoxide ⁇ .
- Scandium-(4-methoxy- picolylmethylketone)-bis(acetylacetonate), which emits in the wavelength range of from about 420 to about 433 nanometers may be employed.
- beneficial light emissive organic materials are those that emit light in the blue-green wavelength range.
- opto-electronically active organic materials that emit in the visible wavelength range and that may be employed with the present technique are organometallic complexes of 8-hydroxyquinoline, such as tris(8-quinolinolato)aluminum and other materials disclosed in U. Mitschke and P. Bauerle, "The Electroluminescence of Organic Materials,” J. Mater. Chem., Vol. 10, pp. 1471-1507 (2000), which is incorporated herein by reference.
- Additional exemplary organic materials that may be employed in the opto-electronically active layer of the present invention include those disclosed by Akcelrud in "Electroluminescent Polymers", Progress in Polymer Science, VoI 28 (2003), pp. 875 — 962, which is also incorporated herein by reference.
- the opto-electronically active organic material used in the present invention may include polymeric materials whose structures comprise various combinations of structures or structural units that are known in the art to be, or expected to be, active, together with structures that are either known or are potentially expected to perform other functions that enhance device performance, such as hole transport, electron transport, charge transport, and charge confinement, and so forth.
- the organic opto-electronic device provided by the present invention comprises a plurality of layers comprising the opto-electronically active organic material, said layers comprising the same or different opto-electronically active organic materials.
- the present invention provides a organic opto-electronic device comprising a plurality of electro-active layers each comprising the opto-electronically active organic material wherein said layers are formed by successively depositing, one layer comprising an opto-electronically active organic material on top of another layer comprising an opto-electronically active organic material.
- each layer comprises a different opto-electronically active organic material that emits light in a different wavelength range.
- each layer comprises a mixture of two or more opto-electronically active organic materials.
- the organic opto-electronic device is an OLED comprising a plurality of electro-active layers, each of said layers comprising a different light emissive organic material, each of said different light emissive organic materials emitting light in a different wavelength range.
- the cathode is in contact with an organic ammonium salt, which in certain embodiments is an organic ammonium salt having structure (I)
- R '-R 4 are independently at each occurrence a C 1 -C 20 aliphatic radical, a C3- C2 0 cycloaliphatic radical, or a C 3 -C 20 aromatic radical, and wherein X " is selected from the group consisting of monovalent inorganic anions, monovalent organic anions, polyvalent inorganic anions, polyvalent organic anions, and mixtures thereof.
- R' t R 2 , R 3 and R 4 in the ammonium salt represented by the structure (I) are the same or different and each represents a hydrocarbon group having 1 to 20 carbon atoms, wherein R 1 , R 2 , R 3 and R 4 are at any occurrence independently selected from the group consisting of aliphatic and aromatic hydrocarbon groups.
- R 1 , R 2 , R 3 and R 4 may be methyl, ethyl, n-propyl, isopropyl, allyl, n-butyl, sec-butyl, tert-butyl, 2-butenyl, 1-pentyl, 2-pentyl, 3- pentyl, 2-methyl-l -butyl, isopentyl, tert-pentyl, 3-methyl-2-butyl, neopentyl, n-hexyl, 4-methyl -2 -pentyl, cyctopentyl, cyclohexyl, 1-heptyl, 3-heptyl, 1-octyl, 2-octyl, 2-ethyl-l-hexyl, 1,1- dimethyl-3,3- dimethylbutyl (popular name: tert-octyl), nonyl, decyl, phenyl, 4-toluyl,
- R 1 , R 2 , R 3 and R 4 are aliphatic hydrocarbon groups having from 1 to 12 carbon atoms, such as methyl, ethyl, n-propyl, isopropyl, tert-butyl, tert-pentyl and l,l-dimethyl-3,3- dimethylbutyl.
- R 1 , R 2 , R 3 and R 4 may form a cyclic structure comprising at least one heteroatom.
- R 1 and R 2 may together form a cyclic structure comprising at least one heteroatom atom.
- the anionic species X " of structure I is selected from the group consisting of monovalent inorganic anions, monovalent organic anions, polyvalent inorganic anions, polyvalent organic anions, and mixtures thereof.
- Monovalent inorganic anions include chloride, bromide, fluoride, methanesulfonate, hydro gensul fate, bicarbonate, and the like.
- Polyvalent inorganic anions include carbonate, sulfate, sulfite, and the like.
- Monovalent organic anions include methanesulfonate, acetate, alkoxide, acetylacetonate, and the like.
- Polyvalent organic anions include malonate, succinate, ethylenedisufonate (i.e. " O 3 SCH 2 CH 2 SO 3 " ), and the like.
- Organic ammonium salts may be employed as components of the organic opto-electronic devices of the present invention.
- Organic ammonium salts which may be employed include ammonium salts having structure (I) which are exemplified in Table 1. (The dashed line ( ) signals the point of attachment of the group). Those skilled in the art will understand that structure (I) is not intended to exemplify all suitable organic ammonium salts which may be employed in the present invention.
- the imidazolium salts l-ethyl-3-methylimidazoliurn bis(trifluoromethylsulfonyl)imide and l-ethyl-3-methylimidazolium hexafluorophosphate fall outside the genus defined by structure (I) and yet may be employed as organic ammonium salts in the practice of the present invention.
- organic ammonium salts may be employed advantageously in the practice of the present invention.
- the performance characteristics of the organic opto-electronic devices of the present invention may be adjusted by changing the structure and/or physical properties of the organic ammonium salt employed.
- the organic ammonium salt is an ammonium salt which is an ionic liquid. In an alternate embodiment, a mixture comprising at least two organic ammonium salts is employed.
- the organic ammonium salt employed may be used in essentially pure form or as a mixture comprising an organic ammonium salt and one or more adjuvants. Suitable adjuvants include solvents, oils, waxes, and the like.
- the organic ammonium salt is selected from the group consisting of trihexyltetradecylammonium bis(trifluoromethylsulfonyl)arnide, trihexyl(tetradecyl)ammonium hexafluorophosphate, trihexyl(tetradecyl)ammonium dicyanamide, methyltriisobutylammonium tosylate, tetradecyltrihexylammonium decanoate, tetradecyltrihexylammonium bis(2,4,4-trimethylpentyl)phosphinate, tetradecyltrihexylammonium bromide, tetrahexyl ammonium tetrafluoroborate, 1- ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide, 1 -ethyl-3- methylimidazolium hexafluoride,
- Figures 1-3 illustrate embodiments of the invention.
- an exemplary optoelectronic device is shown in which the organic ammonium salt is dispersed in an opto-electronically active organic material which emits light under the influence of a voltage bias applied across cathode 10 and anode 14.
- the combination of the ammonium salt and the opto-electronically active organic material is shown in Figure 1 as layer 12.
- the organic ammonium salt is in contact with the anode by virtue of its being dispersed in the opto-electronically active organic material, there being no intervening layer between the cathode and the opto-electronically active organic material.
- Figure 2 illustrates another embodiment of the present invention wherein the opto-electronic device comprises a cathode 10 in contact with a layer 12 comprising a mixture of an ammonium salt having structure (I) dispersed in an opto- electronically active organic material.
- the opto-electronic device shown in Figure 2 also comprises an anode 14 and a charge injection layer 16.
- Figure 3 illustrates yet another embodiment of the present invention in which the cathode 10 is in direct contact with a layer 18 of an ionic liquid comprising an ammonium salt having structure (I).
- the layer of the ionic liquid 18 serves as an intervening layer between a layer 20 comprising an opto-electronically active organic material, which in one embodiment, is a mixture of two or more electro-active polymers.
- the organic optoelectronic device of Figure 3 may be operated as an OLED by applying a voltage bias across cathode 10 and anode 14.
- the organic opto-electronic device of Figure 3 may be operated as a photovoltaic (PV) device by applying a reverse (relative to the voltage bias employed when the opto-electronic device is operated as an OLED) voltage bias across cathode 10 and anode 14.
- PV photovoltaic
- One or more layers disposed between the conductive layers, in addition to the layer comprising the opto-electronic material, may also be present in the organic optoelectronic device provided by the present invention. Such layers are at times referred to as "intervening layers" since they are typically located between the layer comprising the opto-electronic material and one or more of the conductive layers.
- Intervening layers are typically located between the layer comprising the opto-electronic material and one or more of the conductive layers.
- Figure 3 comprises an intervening layer 16 between the anode 14 and the layer 12 comprising the opto-electronically active organic material.
- Various intervening layers may be included in the opto-electronic device to further increase the efficiency of the exemplary opto-electronic device.
- an intervening layer can serve to improve the injection and/or transport of positive charges (holes) into the opto-electronic device.
- the thickness of each of these layers is typically kept below 500 nanometers, commonly below 100 nanometers.
- Exemplary materials for these intervening layers are in certain embodiments of low-to-intermediate molecular weight (for example, less than about 2000 grams per mole) organic molecules, poly(3,4-ethylenedioxythipohene) doped with polystyrenesulfonic acid (“PEDOT:PSS”), and polyaniline, to name a few. They may be applied during the manufacture of the device by conventional methods such as spray coating, dip coating, or physical or chemical vapor deposition, and other processes.
- a hole injection enhancement layer is introduced between the anode layer and the active organic material layer to provide a higher injected current at a given forward bias and/or a higher maximum current before the failure of the device.
- the hole injection enhancement layer facilitates the injection of holes from the anode.
- Exemplary materials for the hole injection enhancement layer are arylene-based compounds, such as those disclosed in U.S. Patent 5,998,803, which is incorporated herein by reference. Particular examples include 3,4,9,10-perylenetetra-carboxylic dianhydride and bis(l,2,5-thiadiazolo)-p- quinobis( 1 ,3-dithiole).
- the exemplary device includes an intervening layer which is a hole transport layer.
- the hole transport layer is disposed between a hole injection enhancement layer and the layer comprising the layer comprising the opto-electronically active organic material.
- the hole transport layer transports holes and blocks the transportation of electrons so that holes and electrons may be substantially optimally combined in the active organic material layer.
- Exemplary materials for the hole transport layer may include triarylamines, triaryldiamines, tetraphenyldiamine, aromatic tertiary amines, hydrazone derivatives, carbazole derivatives, triazole derivatives, imidazole derivatives, oxadiazole derivatives having an amino group, and polythiophenes, to name a few.
- an intervening layer includes an "electron injecting and transporting enhancement layer" as an additional layer, which is typically disposed between an electron-donating material and the opto-electronically active organic material layer.
- Typical materials utilized for the electron injecting and transporting enhancement layer may include metal organic complexes, such as tris(8- quinolinolato)aluminum, oxadiazole derivatives, perylene derivatives, pyridine derivatives, pyrimidine derivatives, quinoline derivatives, quinoxaline derivatives, diphenylquinone derivatives, and nitro-substituted fluorene derivatives, and the like.
- the opto-electronically active material may also be co-mingled with a polymeric material that can serve as a matrix polymer. Generally, any of the known polymeric materials may be used.
- the layer comprising the opto-electronically active material further includes a fluorescent dye or a phosphorescent dye.
- the present invention provides an organic opto-electronic device which is an organic light emitting diode (OLED), said OLED comprising a photoluminescent ("PL") layer.
- the photoluminescent layer is a fluorescent layer comprising at least one fluorescent material.
- the photoluminescent layer is a phosphorescent layer comprising at least one phosphorescent material.
- the opto-electronic device provided by the present invention comprises both a fluorescent layer and phosphorescent layer. Suitable photoluminescent materials for use in such layers are , for example those disclosed in U.S. Patent 6, 847,162.
- the opto-electronic devices provided by the present invention generally include a cathode comprising at least one zero-valent metal, said cathode being in contact with an organic ammonium salt having structure (I), an anode, an intervening layer and an opto-electronically active organic material layer.
- at least one of the cathode or the anode layers is transparent.
- all the layers present in the opto-electronic devices are transparent as defined herein.
- the opto-electronic device provided by the present invention comprises a transparent electrode which exhibits a percent light transmission of greater than or equal to about 90 percent in an embodiment, and greater than or equal to 95 percent in another embodiment.
- the present invention provides an optoelectronic device which is a photovoltaic ("PV") cell which exhibits efficient transport of electrons across an interface between an transparent electrode and an adjacent active organic material.
- PV photovoltaic
- the present invention encompasses a method for operating an optoelectronic device.
- the method includes applying an electrical field or light energy to the opto-electronic device to convert between electrical energy and light energy.
- the opto-electronic devices may be an organic photovoltaic device, a photodetector, a display device, and an organic light emitting device. Display devices are exemplified by devices used for signage.
- the device can be operable in a direct current mode.
- the device can be operable in an alternating current mode.
- poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonate was purchased from Bayer Corporation under the trade name Baytron® P.
- a green light-emitting polymer was obtained commercially from Dow (Chemical Company under the trade name of Lumation® 1304. Devices were made as follows. Pre-patterned ITO coated glass used as the anode substrate was cleaned with UV-ozone for 10 minutes.
- a layer (60nm) of ⁇ poly(3,4)- ethylendioxythiophene/polystyrene sulfonate ⁇ (PEDOT:PSS) polymer was deposited atop the ITO via spin-coating and the assembly was baked for about 1 hour at 180°C in air.
- the light emitting layer comprised a mixture of the light emitting polymer Lumation 1304 and an ammonium salt ionic liquid. In Comparative Example 1, no ammonium salt ionic liquid was included in the light emitting layer.
- the light emitting layer was formed by spin coating a solution of the LEP and the ammonium salt ionic liquid on top of the PEDOT:PSS layer.
- OLED was prepared as described in the General Procedure. The OLED was identical to the OLEDS of Examples 1 and 2 with the exception that no ammonium salt was included in the light emitting layer.
- the performance of the OLEDs of Examples 1 and 2 and of Comparative Example 1 was evaluated by measuring the current-voltage-luminance (I- V-L) characteristics of each OLED.
- a photodiode calibrated with a luminance meter (Minolta LS-1 10) was used to measure the luminance (in units of candela per square meter, cd/m2).
- a plot of efficiency (measured in candela per ampere, cd/A) as a function of current density (measured in milliamperes per square centimeter, mA/cm2) was obtained for each device from its I- V-L data.
- Figure 4 shows the a plot of Efficiency versus Current Density for the OLED device of Comparative Example 1 (CEx.1) a device comprising a light emitting polymer (LEP) as the opto-electronically active material and an aluminum (Al) as the cathode.
- LEP light emitting polymer
- Al aluminum
- An exemplary OLED was fabricated as described in the General Procedure.
- the ammonium salt employed was an ionic liquid trihexyltetradecylammonium tetrafluoroborate (CH 3 (CH 2 ) S ) 4 N(BF 4 ) (CAS# 15553-50-1), obtained from Sigma- Aldrich.
- the solution of LEP and the ionic liquid was prepared by mixing 2 milliliters of a 1.0 wt% solution of the LEP in tetrahydrofuran and 0.20 milliliters of a 0.5% solution of trihexyltetradecylammonium tetrafluoroborate in tetrahydrofuran.
- An exemplary organic opto-electronic device that could be used both as an OLED and a photovoltaic device (for example, a photodetector) was fabricated as in EXAMPLE 1.
- the ammonium salt used was an ionic liquid trihexyltetradecylammonium tetrafluoroborate.
- Figure 7 shows I-V characteristics of the device of Example 2 under UV illumination and in the dark. Where the device was operated as a photovoltaic device, a hand-held long-wavelength UV-lamp having an intensity of about 3mW/cm 2 at 364nm was used as the illumination light source. The device was illuminated through the transparent ITO electrode.
- the exemplary device exhibits a short-circuit current (Isc) of about 2XlO "6 Amperes (corresponding to about lxl0 "5 mA/cm 2 ), which is more than two orders of magnitude higher than the current measured in the dark, at an open circuit voltage of 2.05V.
- Isc short-circuit current
- the current was plotted against the applied voltage bias under illumination and in the dark.
- Isc short circuit current
- Voc open circuit voltage
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TW200738595A (en) | 2007-10-16 |
JP2009530847A (ja) | 2009-08-27 |
WO2007111763A3 (en) | 2008-02-28 |
KR20090003235A (ko) | 2009-01-09 |
WO2007111763A2 (en) | 2007-10-04 |
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