EP1987588A1 - Circuit oscillant integre accordable - Google Patents

Circuit oscillant integre accordable

Info

Publication number
EP1987588A1
EP1987588A1 EP07723857A EP07723857A EP1987588A1 EP 1987588 A1 EP1987588 A1 EP 1987588A1 EP 07723857 A EP07723857 A EP 07723857A EP 07723857 A EP07723857 A EP 07723857A EP 1987588 A1 EP1987588 A1 EP 1987588A1
Authority
EP
European Patent Office
Prior art keywords
resonant circuit
inductive element
parallel
circuit according
capacitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07723857A
Other languages
German (de)
English (en)
Inventor
Samir El Rai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microchip Technology Munich GmbH
Original Assignee
Atmel Duisburg GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Duisburg GmbH filed Critical Atmel Duisburg GmbH
Publication of EP1987588A1 publication Critical patent/EP1987588A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J3/00—Continuous tuning
    • H03J3/20—Continuous tuning of single resonant circuit by varying inductance only or capacitance only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J2200/00—Indexing scheme relating to tuning resonant circuits and selecting resonant circuits
    • H03J2200/15—Tuning of resonator by means of digitally controlled inductor bank

Definitions

  • the present invention relates to an integrated tunable resonant circuit according to the preamble of claim 1.
  • the invention further relates to a voltage controlled oscillator and an integrated circuit.
  • the invention is in the field of integrated circuits (IC). It is particularly in the field of integrated tunable tank circuits for providing a high frequency output signal having a (target) frequency dependent on a control signal.
  • IC integrated circuits
  • resonant circuits are widely used in radio frequency (RF) circuits such as voltage controlled oscillators, amplifiers, tuners, etc. in transceivers of telecommunication systems.
  • RF radio frequency
  • US Pat. No. 6,778,022 B1 discloses an LC parallel resonant circuit (FIG. 2A) whose oscillation frequency is adjusted (tuned) by correspondingly changing the value of variable capacitances of the parallel resonant circuit.
  • capacitors with the aid of digitally controlled switching elements which are connected in series with each capacitor, individually connected to the resonant circuit or not connected thereto (Fig. 3).
  • the disadvantage here is that the switching elements in the closed state represent a non-negligible series resistance, which affects the quality of the resonant circuit. If the width of the switching elements is increased in order to increase the quality, however, the stray capacitance of the switching elements increases.
  • the total capacitance of the resonant circuit increases, so that the maximum adjustable frequency and thus the width of the tuning range, in which the frequency can be adjusted, decreases.
  • An increase in quality can only be achieved at the expense of tunability or an improvement in tunability only at the expense of the quality of the resonant circuit.
  • the invention has for its object to provide simple and inexpensive to implement integrated resonant circuits and voltage controlled oscillators, which have improved tunability without compromising the quality and / or higher quality without limitation of tunability and robust against noise interference of Control signal are, so that efficient integrated circuits can be realized low cost.
  • this object is achieved by a resonant circuit having the features of patent claim 1, a voltage-controlled oscillator having the features of patent claim 20 and by an integrated circuit having the features of patent claim 21.
  • the integrated tunable oscillating circuit according to the invention for providing a high-frequency output signal with a frequency dependent on a control signal includes (A) a parallel resonant circuit having a first inductive element and an output for providing the high-frequency output signal, (B) a switching unit having a controlled path and a control connection to Switching between states, wherein the switching unit is designed to have a predominantly capacitive behavior in a first state (OFF) and a predominantly resistive behavior in a second state (ON), and (C) a second inductive element which can be coupled to the first inductive element in a transformer-like manner , wherein (D) the resonant circuit is configured to control the control terminal of the switching unit in response to the control signal and (E) the controlled path is connected in parallel to the second inductive element.
  • the voltage-controlled oscillator according to the invention has at least one such resonant circuit.
  • the integrated circuit according to the invention has at least one such oscillating circuit and / or at least one such voltage-controlled oscillator.
  • the essence of the invention is, in addition to the (first) parallel resonant circuit to provide at least one further turn-off (second) parallel resonant circuit whose (second) inductive element is transformer coupled to the (first) inductive element of the first parallel resonant circuit and the parallel to the second inductive element Switching unit having a controlled path which is connected in parallel to the second inductive element.
  • the effective inductance value of the first inductive element and thus the frequency of the output signal change due to the transformer coupling.
  • This way will advantageously achieves improved tunability without degrading the quality and / or higher quality without compromising tunability.
  • a higher robustness against noise disturbances of the control signal is made possible.
  • it is advantageously made possible to keep the resonant circuit resistance constant at resonance and the amplitude of the output signal, for example, in a voltage-controlled oscillator during the tuning process.
  • the capacitive behavior of the switching unit is based entirely on a capacity of the controlled path in the first state.
  • Such a resonant circuit is particularly easy to implement.
  • the capacitive behavior of the switching unit is based on the capacitance of the controlled path in the first state and a capacitive unit connected in parallel with the controlled path.
  • the total capacitance value of the switching unit can advantageously be kept constant for a variable value of the capacitance of the controlled path.
  • advantageously particularly high resonant circuit qualities can be achieved.
  • the switching unit preferably has a field-effect transistor whose drain-source channel forms the controlled path and whose gate terminal is connected to the control terminal. Such a resonant circuit is very inexpensive to realisiseren and requires little chip area.
  • the switching unit has a microelectromechanical switching element. In this way, advantageously very small values of the ohmic resistance and thus very high quality in the on state are possible.
  • the (first) parallel resonant circuit has a first capacitive unit connected in parallel with the first inductive element and having a preferably adjustable capacitance value.
  • the resonant circuit is configured to set the adjustable capacitance value of the first capacitive unit as a function of at least one further control signal.
  • Such a resonant circuit has a particularly wide tuning range and / or a particularly high frequency resolution during tuning.
  • the first capacitive unit is a parasitic capacitance. Such a resonant circuit is particularly easy to implement.
  • the switching unit has a second capacitive unit connected in parallel with the controlled path.
  • the total capacitance value of the switching unit can advantageously be kept constant for a variable value of the capacitance of the controlled path. In this way, advantageously particularly high resonant circuit qualities can be achieved.
  • the second capacitive unit has an adjustable capacitance value and the resonant circuit is configured to set the adjustable capacitance value of the second capacitive unit as a function of at least one further control signal.
  • a resonant circuit has a particularly wide tuning range and / or a particularly high frequency resolution during tuning.
  • the second inductive element has two series-connected inductive sub-elements and at the connection point of the inductive sub-elements, a first potential value can be applied when the switching unit is in the first state, and a different second potential value when the switching unit in the second State is. In this way, advantageously particularly high resonant circuit qualities and increased robustness of the control signal with respect to noise can be achieved.
  • a third inductive element which can be coupled in a transforming manner with the first inductive element and a second switching unit connected in parallel with the third inductive element is provided with a second controlled path, wherein the second controlled path is connected in parallel to the third inductive element.
  • At least one first resonant circuit and a second resonant circuit are provided according to one of the preceding claims, wherein a split parallel resonant circuit of the second resonant circuit is connected in parallel to the first inductive element of the first resonant circuit.
  • the frequency resolution of the resonant circuit is advantageously finer.
  • several output signals are provided in this way, which differ in their amplitude.
  • the integrated circuit is designed as a monolithic integrated circuit, as a hybrid circuit or as a multilayer ceramic circuit.
  • FIG. 1 shows a first embodiment of a resonant circuit according to the invention
  • FIG. 2 shows an embodiment of the switching unit of FIG. 1
  • FIG. 1 shows a first embodiment of a resonant circuit according to the invention
  • FIG. 2 shows an embodiment of the switching unit of FIG. 1
  • FIG. 3 shows a second embodiment of a resonant circuit according to the invention (top view); 4 shows a third exemplary embodiment of a resonant circuit according to the invention (top view);
  • Fig. 5 shows a fourth embodiment of a resonant circuit according to the invention (plan view).
  • FIG. 1 shows a circuit diagram of a first exemplary embodiment of a resonant circuit according to the invention.
  • the resonant circuit 10 has a first parallel resonant circuit 11 and a second oscillatory resonant circuit 12 which can be switched off.
  • the first parallel resonant circuit 11 includes a first inductive element L1 and a first capacitive unit C1 connected in parallel.
  • the high-frequency output signal yRF provided by the oscillating circuit 10 with appropriate excitation which has a (target) frequency f ⁇ , for example in the gigahertz range (tunable, for example, from 10 GHz to 14 GHz), can e.g. be tapped at the terminals of the capacitive unit C1.
  • the capacitive unit C1 preferably has an adjustable capacitance value that is set with the aid of at least one control signal vt1.
  • the capacitive unit C1 may, for example, comprise a unit with a continuously variable capacitance value, such as a varactor, capacitance, metal oxide semiconductor (MOS) diode or a MEM varactor (microelectromechanical) or / and a unit with a step-wise variable capacitance value , for example as switched MIM capacitor (metal insulator metal), switched polycap or as a switched capacitor-to-capacitor converter (CDAC) is executed.
  • the capacitive unit C1 preferably has a varactor diode and a capacitor bank connected in parallel.
  • the capacitive unit C1 may have a fixed capacitance value.
  • the capacitive unit C1 is a parasitic capacitance, for example, of a reinforcing element with which the resonant circuit according to the invention is used, for example, in a voltage-controlled oscillator.
  • the turn-off second parallel resonant circuit 12 has a parallel circuit of a second inductive element L2 and a switching unit S1.
  • the second inductive element L2 is transformer-coupled (inductively) to the first inductive element L1, which is illustrated in FIG. 1 by double arrows and the coupling inductance M.
  • the switching unit S1 has a controlled path 15, a control terminal 16 for switching the controlled route between a switched off / opened
  • the controlled path 15 is thus connected directly in parallel to the second inductive element L2.
  • the control signal vt2 is present at the control connection 16, so that the switching unit S1 or the controlled path 15 depends on the
  • Control signal vt2 is controlled and so between the states ON and OFF changes.
  • the switching unit S1 In the open state (OFF), the switching unit S1 has a predominantly capacitive behavior, while in the closed state (ON) exhibits a predominantly resistive behavior. This means that in the opened state the capacitive and in the closed state the resistive behavior predominates.
  • the capacitive behavior of the switching unit S1 is based here on the capacitance C_off of the controlled path 15 in the OFF state and possibly the capacitance of the capacitive unit C2, while the resistive behavior is due to the ohmic resistance Ron of the controlled path 15 in the ON state.
  • the capacitive unit C2 preferably has a fixed capacitance value and is designed, for example, as a MIM capacitor or as a distributed capacitance. Alternatively, it may have an adjustable capacitance value and be embodied, for example, as a varactor, MEM varactor, switched MIM capacitor and / or switched capacitor bank.
  • the resonant circuit according to the invention-as illustrated in FIG. 1- is implemented differentially and therefore provides a differential output signal yRF whose frequency f ⁇ depends on the control signals vt1 and vt2. If the first inductive element L1 is subdivided-as likewise shown in FIG.
  • the resonant circuit according to the invention may not be implemented as single ended.
  • the inductive elements L1, L2 are preferably designed as arranged in one or more metallization levels of an integrated circuit conductor loops. Alternatively, it can also be bonding wires or other connecting means, such as e.g. small solder balls, flip-chip transitions, etc. act.
  • FIG. 2 shows a preferred embodiment of the switching unit S1 with a field effect transistor (MOSFET).
  • the field effect transistor T1 has a drain
  • Terminal T1 D a source terminal T1S and a gate terminal T1G on.
  • the drain-source channel of the field effect transistor T1 forms the controlled path 15
  • the gate terminal T1G is connected to the control terminal 16, so that the control signal vt2 is applied to the gate terminal T1G.
  • Drain-source channel mainly a capacitance C_off, which is shown in dashed lines in Fig. 2 and referred to as drain-source capacitance C_DS.
  • the transistor T1 or its drain-source channel represents predominantly a resistor Ron.
  • the switching unit S1 has a microelectromechanical switching element (MEM) instead of a field effect transistor.
  • MEM microelectromechanical switching element
  • the switching unit S1 In the closed state (ON), the switching unit S1 short-circuits the second inductive element L2 and thus largely prevents the formation of a magnetic field. This reduces the inductance value of the first inductive element to the effective inductance value
  • L1_eff L1 - M 2 / L2 ⁇ L1, (1)
  • M denotes the coupling inductance
  • L1 the inductance values of the first and second inductive elements, respectively.
  • Ron of the controlled track 15 should be as small as possible.
  • the inductance value of the first inductive element increases effectively when the expression ⁇ 2 L 2 C 2_res is less than one, ie
  • the maximum adjustable frequency of the resonant circuit increases, while by the effective increase according to equation (2) and (3) the minimum adjustable frequency decreases.
  • the tuning range of the resonant circuit thus increases.
  • increases in the value of the coupling inductance M lead to a widening of the tuning range.
  • the setting of the target frequency f ⁇ of the output signal yRF is effected in the oscillating circuit according to FIGS.
  • Such a division of the frequency tuning of a resonant circuit into a direct tuning of a resonant circuit capacitance (C1) and an indirect tuning of a resonant circuit inductance (L1_eff) by a capacitively tunable and transformerically (inductively) coupled second resonant circuit (12) opens up the possibility of achieving a required overall tunability (width of the resonant circuit) Area of the target frequencies f ⁇ ) so optimally distributed to the direct and indirect vote that further requirements for the resonant circuit, in particular the quality of the resonant circuit, can be met.
  • the quality is advantageously increased when the switching unit (ON) is closed by increasing the width of the transistor T1 and thus reducing the resistance Ron.
  • the quality is advantageously increased when the switching unit is open (OFF), in that the inverted control signal vt2_inv is preferably applied at the connection point 18 (see FIG. 1).
  • the control signal vt2 can take the two voltage values 3V and 0V to open and close the transistor T1
  • the controlled path 15 is supplied depending on the state of the switching unit with DC potentials, which lead to a higher quality of the drain-source capacitance and thus to a higher resonant circuit quality (for operating point adjustment thus advantageously no resistors are required, resulting in a increased robustness against noise).
  • the concomitant reduction of the capacitance C_DS is advantageously compensated by an increase in the capacitance C2.
  • connection point 18 the following potential values are applied at the connection point 18, again assuming the two exemplary voltage values 3V and 0V for the control signal vt2:
  • the switching unit S1 in the states 1 and 2 has a predominantly capacitive behavior and in state 3 a predominantly resistive behavior.
  • the states 1 and 2 differ here in the capacitance value of the drain-source capacitance C_DS. As a result, the frequency resolution of the resonant circuit is advantageously finer.
  • connection point 18 Alternatively, a fixed reference potential (ground) can be applied at connection point 18.
  • the resonant circuit according to the invention furthermore makes it possible to ensure, by an appropriate choice of the values of M, C2, L2, C1, L1, that the resonant circuit resistance at resonance and hence the amplitude of the output signal yRF, for example in a voltage-controlled oscillator, during the tuning process are advantageously substantially nonexistent changed.
  • the minimum or maximum effective inductance value L1 eff with L1 min or AL * L1 min and the minimum or maximum capacitance value of the first capacitive unit C1 is denoted by C1 min or AC * C1 min
  • the capacitive unit C2 of the switching unit S1 shown in FIGS. 1 and 2 can advantageously be dispensed with in further exemplary embodiments.
  • the capacitive behavior of the switching unit S1 in the OFF state is based exclusively on the capacitance C_off or C_DS of the controlled path 15 in the OFF state.
  • a further advantage results if the resonant circuit according to the invention is used e.g. in a voltage controlled oscillator (VCO) is used.
  • VCO voltage controlled oscillator
  • parasitic capacitances of amplification elements (transistors) of the VCO reduce the tuning proportion caused by a direct tuning of resonant circuit capacitances, they do not reduce the proportion attributable to an inventive indirect tuning of resonant circuit inductances (L1_eff).
  • FIG. 3 schematically shows a layout of a second exemplary embodiment of a resonant circuit according to the invention.
  • the plan view according to FIG. 3 corresponds to a detail of a horizontal sectional plane through an integrated circuit having a resonant circuit 10 according to the invention as shown in FIGS. 1 and 2.
  • the resonant circuit 20 has a first parallel resonant circuit 11 and a second parallel resonant circuit 12 which can be switched off.
  • the first parallel resonant circuit 11 has a first conductor loop 21 forming the first inductive element L1, to which a first capacitive unit C1 designed as a varactor diode with a capacitor bank (CDAC) connected in parallel is connected (represented symbolically in FIG. 3).
  • CDAC capacitor bank
  • the turn-off second parallel resonant circuit 12 has a second conductor loop 22 forming the second inductive element L2, to which the field effect transistor T1 and - parallel to this - a second capacitive unit C2 designed as an MIM capacitor are connected, which together form the switching unit S1.
  • the transistor T1 in this case has a plurality of drain-source "fingers".
  • the two conductor loops 21, 22 are transformer coupled.
  • the turn-off second parallel resonant circuit 12 is preferably disposed within or alternatively outside the first parallel resonant circuit 11.
  • the conductor loop 21 and / or the conductor loop 22 has a plurality of turns (full loops).
  • the number of turns can in this case coincide in two conductor loops or differ from one another.
  • the conductor loops can also be rectangular, square, oval, round or with "rounded corners”.
  • FIG. 4 schematically shows a layout of a third exemplary embodiment of a resonant circuit according to the invention.
  • the resonant circuit 30 two switch-off parallel resonant circuits 12, 13 are arranged within the first parallel resonant circuit 11 and are transformer-coupled thereto.
  • the first parallel resonant circuit 11 has a first conductor loop 31, which forms the first inductive element L1 and to which a first capacitive one designed as a varactor
  • the first switch-off parallel resonant circuit 12 has a second conductor loop 32 forming a second inductive element L2, to which a first switching unit S1 is connected.
  • the second switch-off parallel resonant circuit 13 has a third conductor loop 33, forming a third inductive element L3, to which a second conductor loop 33 is connected
  • Switching unit S2 is connected.
  • the switching units S1, S2 each have a controlled path connected in parallel to the element L2 (32) or L3 (33), which is controlled by a control signal vt2 or vt3.
  • the controlled paths are formed in this embodiment by field effect transistors (MOSFET). Separate capacitive elements are not provided in the switching units S1, S2, so that the switching units in this embodiment exclusively contain field-effect transistors, on whose drain-source capacitance the capacitive behavior of the switching units in the OFF state is based.
  • the first conductor loop 31 or the first inductive element L1 is transformer-coupled to the second and third conductor loops 32, 33 or to the second and third inductive elements L2, L3, respectively, as shown in FIG. 4 by means of the double arrows is.
  • the conductor loops 31-33 can analogously to the corresponding statement with respect.
  • Fig. 3 also be rectangular, oval, etc. executed.
  • the conductor loops 31, 32 and / or 33 have multiple turns (full loops), with the number of turns varying from conductor loop to conductor loop.
  • more than two switch-off parallel resonant circuits are provided, the inductive elements are each coupled in a transformer with the first parallel resonant circuit.
  • the more switchable parallel resonant circuits are provided, the finer the frequency resolution of the resonant circuit, i. the step size of the frequency tuning.
  • the switch-off parallel resonant circuits are arranged inside and / or outside the first parallel resonant circuit.
  • FIG. 5 schematically shows a layout of a preferred fourth exemplary embodiment of a resonant circuit according to the invention.
  • a plurality of resonant circuits 20, 20 ', ... according to the invention are interconnected.
  • the resonant circuit 20 according to the above description with respect to FIG. 3 is shown. It comprises a first parallel resonant circuit 11 with a first conductor loop 41 and a symbolically represented first capacitive unit C1, as well as a turn-off second parallel resonant circuit 12 with a transformer-coupled second conductor loop 42 and a switching unit S1.
  • Connected to the terminals of the first capacitive unit C1 is another resonant circuit 20 'according to the invention whose first parallel resonant circuit 11' has been split in the middle of its conductor loop 41 'and connected to the terminals of the capacitive unit C1 of the first resonant circuit 20.
  • the separated first resonant circuit 11 ' is connected in parallel to the conductor loop 41 and to the first capacitive unit C1 of the first resonant circuit 20.
  • the further resonant circuit 20' has a turn-off second parallel resonant circuit 12 'with a second (41') coupled second conductor loop 42nd 'and a switching unit SV.
  • a total of N output signals yRF are provided in this way, which differ in their amplitude and can be tapped at the capacitive units C1, CV of the first parallel resonant circuits 11, 1V.
  • the component values of stage change
  • both the widths and the radii of the conductor loops decrease and the capacitance values increase correspondingly from stage to stage (eg from top to bottom in FIG.
  • resonant circuit according to the invention described above with reference to exemplary embodiments can advantageously be used in a wide variety of applications in oscillator, resonator, amplifier, tuner circuits, etc.
  • the resonant circuit or the circuits according to the invention are each preferably part of an integrated circuit, for example, as a monolithic integrated circuit (eg application specific integrated circuit, ASIC, or application specific standard product, ASSP), as a hybrid circuit (thin or thick film technology) or is designed as a multilayer ceramic circuit arrangement.
  • ASIC application specific integrated circuit
  • ASSP application specific standard product
  • T1 D T1S drain or source of T1

Landscapes

  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

L'invention concerne un circuit oscillant intégré accordable destiné à délivrer un signal de sortie haute fréquence avec une fréquence dépendant du signal de commande, comportant un circuit oscillant parallèle avec un premier élément inductif et une sortie destinée à délivrer le signal de sortie haute fréquence, une unité de commutation avec une ligne commandée et une borne de commande pour commuter entre différents états, ladite unité de commutation étant réalisée pour posséder un comportement essentiellement capacitif dans un premier état et un comportement essentiellement résistif dans un deuxième état, ledit circuit oscillant étant réalisé pour activer la borne de commande de l'unité de commutation en fonction du signal de commande. Selon l'invention, le circuit oscillant comporte un deuxième élément inductif, apte à être couplé à la manière d'un transformateur au premier élément inductif, la ligne commandée étant montée en parallèle au deuxième élément inductif. L'invention concerne en outre un oscillateur asservi en tension et un circuit intégré.
EP07723857A 2006-05-17 2007-03-31 Circuit oscillant integre accordable Withdrawn EP1987588A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006023352A DE102006023352A1 (de) 2006-05-17 2006-05-17 Integrierter abstimmbarer Schwingkreis
PCT/EP2007/002916 WO2007131576A1 (fr) 2006-05-17 2007-03-31 circuit oscillant intégré accordable

Publications (1)

Publication Number Publication Date
EP1987588A1 true EP1987588A1 (fr) 2008-11-05

Family

ID=38137650

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07723857A Withdrawn EP1987588A1 (fr) 2006-05-17 2007-03-31 Circuit oscillant integre accordable

Country Status (4)

Country Link
US (1) US7633352B2 (fr)
EP (1) EP1987588A1 (fr)
DE (1) DE102006023352A1 (fr)
WO (1) WO2007131576A1 (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7936224B2 (en) * 2008-04-22 2011-05-03 Mediatek Inc. Voltage controlled oscillator
US7863993B1 (en) * 2008-09-08 2011-01-04 National Semiconductor Corporation Oscillator for providing oscillation signal with controllable frequency
GB2467931A (en) * 2009-02-19 2010-08-25 Cambridge Silicon Radio Ltd Tuning circuit with mutually coupled inductors
JP5702391B2 (ja) * 2009-09-29 2015-04-15 テレフオンアクチーボラゲット エル エム エリクソン（パブル） 通信ネットワークにおける使用のための発振器、周波数シンセサイザ及びネットワークノード
US8860521B2 (en) * 2012-12-19 2014-10-14 Intel IP Corporation Variable inductor for LC oscillator
US9240752B2 (en) * 2013-03-26 2016-01-19 Stmicroelectronics S.R.L. Power oscillator apparatus with transformer-based power combining
US10153728B2 (en) 2013-11-08 2018-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US10270389B2 (en) 2013-11-08 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US9191014B2 (en) 2013-11-08 2015-11-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus of synchronizing oscillators
US9473152B2 (en) * 2013-11-08 2016-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Coupling structure for inductive device
KR101729400B1 (ko) * 2014-06-30 2017-04-21 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 유도성 디바이스를 위한 커플링 구조물
US9543892B1 (en) * 2015-07-16 2017-01-10 Qualcomm Incorporated Overlapping uncoupled inductors for low-cost multi-frequency voltage-controlled oscillators
US9698727B1 (en) 2015-12-10 2017-07-04 Qualcomm Incorporated Coupled inductor-based resonator
US20190189342A1 (en) * 2017-12-20 2019-06-20 National Chung Shan Institute Of Science And Technology Variable inductor and integrated circuit using the variable inductor
CN115333371A (zh) * 2018-12-26 2022-11-11 华为技术有限公司 一种包含谐振电路的集成电路
US11901399B2 (en) 2019-09-11 2024-02-13 Realtek Semiconductor Corporation Enhanced sensing coil for semiconductor device
US11869700B2 (en) 2019-09-11 2024-01-09 Realtek Semiconductor Corporation Inductor device
TW202350060A (zh) * 2022-05-31 2023-12-16 瑞昱半導體股份有限公司 屏蔽電路與半導體裝置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5715526A (en) 1995-09-08 1998-02-03 Qualcomm Incorporated Apparatus and method for controlling transmission power in a cellular communications system
US5715528A (en) * 1996-02-08 1998-02-03 Ford Motor Company Converting capacitance to inductance in a floating resonant
US5994982A (en) * 1997-07-18 1999-11-30 Trw Inc. MEMS switched resonators for VCO applications
US6049702A (en) * 1997-12-04 2000-04-11 Rockwell Science Center, Llc Integrated passive transceiver section
US6013958A (en) * 1998-07-23 2000-01-11 Lucent Technologies Inc. Integrated circuit with variable capacitor
US6255913B1 (en) * 1999-10-04 2001-07-03 Agere Systems Guardian Corp. Variable frequency oscillator circuit
US6778022B1 (en) * 2001-05-17 2004-08-17 Rf Micro Devices, Inc. VCO with high-Q switching capacitor bank
US6621365B1 (en) * 2002-04-03 2003-09-16 Nokia Corporation Method and apparatus providing a dual mode VCO for an adaptive receiver
US7375598B2 (en) * 2004-02-19 2008-05-20 Texas Instruments Incorporated System and method for increasing radio frequency (RF)/microwave inductor-capacitor (LC) oscillator frequency tuning range
CA2563174C (fr) * 2004-04-21 2009-07-21 Synergy Microwave Corporation Oscillateur a tension controlee a bande large utilisant des resonateurs a couplage en mode evanescent
US7154349B2 (en) * 2004-08-11 2006-12-26 Qualcomm, Incorporated Coupled-inductor multi-band VCO
US7268634B2 (en) * 2004-08-27 2007-09-11 The Hong Kong University Of Science And Technology Dual-mode voltage controlled oscillator using integrated variable inductors
US7280001B2 (en) * 2005-09-14 2007-10-09 Silicon Laboratories Inc. Capacitor array segmentation
JP2007174552A (ja) * 2005-12-26 2007-07-05 Renesas Technology Corp 発振回路およびそれを内蔵した半導体集積回路

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2007131576A1 *

Also Published As

Publication number Publication date
DE102006023352A1 (de) 2007-11-22
WO2007131576A1 (fr) 2007-11-22
US7633352B2 (en) 2009-12-15
US20070268007A1 (en) 2007-11-22

Similar Documents

Publication Publication Date Title
WO2007131576A1 (fr) circuit oscillant intégré accordable
DE102006035204B4 (de) Monolithisch integrierbare Schaltungsanordnung
DE102005048409B4 (de) Verstärkeranordnung für Ultra-Breitband-Anwendungen und Verfahren
EP1858155A1 (fr) Circuit resonant intégré
DE102006017189B4 (de) Integrierte Oszillatorschaltung mit wenigstens zwei Schwingkreisen
EP1456859B1 (fr) Composant inductif
DE60030589T2 (de) Verfahren zur steuerspannungsversorgung für varaktoren, zur verminderung des phasenrauschens in elektronischen oszillatoren
DE102016108117A1 (de) System und Verfahren für eine Ansteuerung eines Hochfrequenzschalters
DE19647383C2 (de) Spannungsgesteuerte, veränderliche Abstimmschaltung
DE10350512A1 (de) Oszillatorschaltkreis und Differentialschaltkreis mit induktiver Last zum Erhalt eines breiten Oszillationsfrequenzbereiches und niedrigem Phasenrauschen
DE10215761A1 (de) Variables Dämpfungsglied
WO2008034597A1 (fr) Arrangement de circuit intégré et utilisation de lignes d'arrivée
DE10021273A1 (de) Oszillator mit veränderbarer Induktivität
DE3844393A1 (de) Schaltungsanordnung mit geschalteter spule
DE102004004707A1 (de) Kapazitätsdioden-Alternativschaltung
DE3037131A1 (de) Obertonkristallschwingschaltung
DE102006046189B4 (de) Oszillatorschaltung
DE102005032093B9 (de) Verstärkeranordnung
EP1202450B1 (fr) Arrangement de circuit
DE102005042789B4 (de) Schwingkreis und Oszillator mit Schwingkreis
DE102006017188A1 (de) Integrierte differenzielle Oszillatorschaltung
EP1786059B1 (fr) Élément de couplage pour le couplage électromagnétique d' au moins deux lignes d' une ligne de transmission
EP2005572B1 (fr) Oscillateur à amplificateur embarqué
DE19754666B4 (de) Oszillatorschaltung
DE10259050A1 (de) Integrierte Schaltung

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20080922

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE FR

RIN1 Information on inventor provided before grant (corrected)

Inventor name: EL RAI, SAMIR

RBV Designated contracting states (corrected)

Designated state(s): DE FR

17Q First examination report despatched

Effective date: 20090818

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Effective date: 20100617