EP1952449A4 - OPTICAL COMPONENTS WITH TEXTURED SEMICONDUCTOR LAYERS - Google Patents

OPTICAL COMPONENTS WITH TEXTURED SEMICONDUCTOR LAYERS

Info

Publication number
EP1952449A4
EP1952449A4 EP06827176A EP06827176A EP1952449A4 EP 1952449 A4 EP1952449 A4 EP 1952449A4 EP 06827176 A EP06827176 A EP 06827176A EP 06827176 A EP06827176 A EP 06827176A EP 1952449 A4 EP1952449 A4 EP 1952449A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor layers
optical devices
devices featuring
textured semiconductor
featuring textured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06827176A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP1952449A2 (en
Inventor
Theodore D Moustakas
Jasper S Cabalu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boston University
Original Assignee
Boston University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boston University filed Critical Boston University
Publication of EP1952449A2 publication Critical patent/EP1952449A2/en
Publication of EP1952449A4 publication Critical patent/EP1952449A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Luminescent Compositions (AREA)
EP06827176A 2005-10-31 2006-10-31 OPTICAL COMPONENTS WITH TEXTURED SEMICONDUCTOR LAYERS Withdrawn EP1952449A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US73203405P 2005-10-31 2005-10-31
PCT/US2006/042483 WO2007053624A2 (en) 2005-10-31 2006-10-31 Optical devices featuring textured semiconductor layers

Publications (2)

Publication Number Publication Date
EP1952449A2 EP1952449A2 (en) 2008-08-06
EP1952449A4 true EP1952449A4 (en) 2011-06-29

Family

ID=38006465

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06827176A Withdrawn EP1952449A4 (en) 2005-10-31 2006-10-31 OPTICAL COMPONENTS WITH TEXTURED SEMICONDUCTOR LAYERS

Country Status (5)

Country Link
EP (1) EP1952449A4 (ja)
JP (1) JP2009515340A (ja)
CN (1) CN101506937A (ja)
CA (1) CA2627880A1 (ja)
WO (1) WO2007053624A2 (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101502195B1 (ko) * 2007-11-21 2015-03-12 미쓰비시 가가꾸 가부시키가이샤 질화물 반도체 및 질화물 반도체의 결정 성장 방법 그리고 질화물 반도체 발광 소자
EP2232591A4 (en) * 2007-12-10 2013-12-25 3M Innovative Properties Co FREQUENCY-REDUCED LIGHT EMITTING DIODE WITH SIMPLIFIED LIGHT EXTRACTION
US8492737B2 (en) 2010-11-18 2013-07-23 The Arizona Board Of Regents On Behalf Of The University Of Arizona Tunable infrared emitter
TW201436263A (zh) * 2013-01-25 2014-09-16 Corsam Technologies Llc 光伏雙重紋理化玻璃
CN103280504A (zh) * 2013-05-14 2013-09-04 西安神光皓瑞光电科技有限公司 一种用于提高发光器件效率的方法
CN104253179A (zh) * 2013-06-28 2014-12-31 晶能光电（江西）有限公司 一种GaN基LED外延片的制备方法
CN103413876A (zh) * 2013-08-09 2013-11-27 西安神光皓瑞光电科技有限公司 一种发光器件及其制备方法
JP6434878B2 (ja) * 2015-09-10 2018-12-05 株式会社東芝 発光装置
JP6846913B2 (ja) * 2016-11-11 2021-03-24 日本碍子株式会社 広波長域発光素子および広波長域発光素子の作製方法
FR3068484B1 (fr) * 2017-06-29 2019-11-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives Projecteur couleur a deux ecrans emissifs.
CN113228309B (zh) * 2019-11-26 2022-04-29 重庆康佳光电技术研究院有限公司 发光二极管结构
CN113140618B (zh) * 2021-03-31 2023-02-10 福建中晶科技有限公司 一种蓝宝石复合衬底及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050056850A1 (en) * 2003-09-17 2005-03-17 Toyoda Gosei Co., Ltd. GaN based semiconductor light emitting device and method of making the same
US20050082544A1 (en) * 2003-10-20 2005-04-21 Yukio Narukawa Nitride semiconductor device, and its fabrication process
US20050242364A1 (en) * 2004-04-15 2005-11-03 Moustakas Theodore D Optical devices featuring textured semiconductor layers

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3424465B2 (ja) * 1996-11-15 2003-07-07 日亜化学工業株式会社 窒化物半導体素子及び窒化物半導体の成長方法
JP3282174B2 (ja) * 1997-01-29 2002-05-13 日亜化学工業株式会社 窒化物半導体発光素子
CN1159750C (zh) * 1997-04-11 2004-07-28 日亚化学工业株式会社 氮化物半导体的生长方法
US6294440B1 (en) * 1998-04-10 2001-09-25 Sharp Kabushiki Kaisha Semiconductor substrate, light-emitting device, and method for producing the same
WO1999066565A1 (en) * 1998-06-18 1999-12-23 University Of Florida Method and apparatus for producing group-iii nitrides
US6252261B1 (en) * 1998-09-30 2001-06-26 Nec Corporation GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
JP3511923B2 (ja) * 1998-12-25 2004-03-29 日亜化学工業株式会社 発光素子
JP3619053B2 (ja) * 1999-05-21 2005-02-09 キヤノン株式会社 光電変換装置の製造方法
JP4145437B2 (ja) * 1999-09-28 2008-09-03 住友電気工業株式会社 単結晶ＧａＮの結晶成長方法及び単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
JP3725382B2 (ja) * 1999-11-11 2005-12-07 株式会社東芝 半導体素子の製造方法および半導体発光素子の製造方法
JP4197814B2 (ja) * 1999-11-12 2008-12-17 シャープ株式会社 Ｌｅｄ駆動方法およびｌｅｄ装置と表示装置
JP4055503B2 (ja) * 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
JP4158519B2 (ja) * 2002-12-26 2008-10-01 住友電気工業株式会社 白色発光素子およびその製造方法
JP4397394B2 (ja) * 2003-01-24 2010-01-13 ディジタル・オプティクス・インターナショナル・コーポレイション 高密度照明システム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050056850A1 (en) * 2003-09-17 2005-03-17 Toyoda Gosei Co., Ltd. GaN based semiconductor light emitting device and method of making the same
US20050082544A1 (en) * 2003-10-20 2005-04-21 Yukio Narukawa Nitride semiconductor device, and its fabrication process
US20050242364A1 (en) * 2004-04-15 2005-11-03 Moustakas Theodore D Optical devices featuring textured semiconductor layers

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
BHATTACHARYYA A ET AL: "Comparative study of GaN/AlGaN MQWs grown homoepitaxially on (1100) and (0001) GaN", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 251, no. 1-4, 1 April 2003 (2003-04-01), pages 487 - 493, XP004416295, ISSN: 0022-0248, DOI: 10.1016/S0022-0248(02)02433-8 *
CABALU J S ET AL: "Nitride LEDs based on flat and "wrinkled" quantum wells", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING SPIE-INT. SOC. OPT. ENG. USA, vol. 5732, no. 1, 25 March 2005 (2005-03-25), pages 185 - 196, XP002635688, ISSN: 0277-786X, DOI: 10.1117/12.588360 *
See also references of WO2007053624A2 *

Also Published As

Publication number Publication date
CA2627880A1 (en) 2007-05-10
EP1952449A2 (en) 2008-08-06
JP2009515340A (ja) 2009-04-09
CN101506937A (zh) 2009-08-12
WO2007053624A2 (en) 2007-05-10
WO2007053624A3 (en) 2009-04-30

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Legal Events

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R17D Deferred search report published (corrected)

Effective date: 20090430

RIN1 Information on inventor provided before grant (corrected)

Inventor name: CABALU, JASPER S.

Inventor name: MOUSTAKAS, THEODORE, D.

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/00 20060101ALI20090617BHEP

Ipc: H01L 21/00 20060101AFI20090617BHEP

RIN1 Information on inventor provided before grant (corrected)

Inventor name: CABALU, JASPER S.

Inventor name: MOUSTAKAS, THEODORE, D.

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/32 20100101ALN20110518BHEP

Ipc: H01L 33/08 20100101ALN20110518BHEP

Ipc: H01L 33/24 20100101ALI20110518BHEP

Ipc: H01L 33/06 20100101ALI20110518BHEP

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