EP1952449A4 - Optical devices featuring textured semiconductor layers - Google Patents

Optical devices featuring textured semiconductor layers

Info

Publication number
EP1952449A4
EP1952449A4 EP06827176A EP06827176A EP1952449A4 EP 1952449 A4 EP1952449 A4 EP 1952449A4 EP 06827176 A EP06827176 A EP 06827176A EP 06827176 A EP06827176 A EP 06827176A EP 1952449 A4 EP1952449 A4 EP 1952449A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor layers
optical devices
devices featuring
textured semiconductor
featuring textured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06827176A
Other languages
German (de)
French (fr)
Other versions
EP1952449A2 (en
Inventor
Theodore D Moustakas
Jasper S Cabalu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boston University
Original Assignee
Boston University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boston University filed Critical Boston University
Publication of EP1952449A2 publication Critical patent/EP1952449A2/en
Publication of EP1952449A4 publication Critical patent/EP1952449A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
EP06827176A 2005-10-31 2006-10-31 Optical devices featuring textured semiconductor layers Withdrawn EP1952449A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US73203405P 2005-10-31 2005-10-31
PCT/US2006/042483 WO2007053624A2 (en) 2005-10-31 2006-10-31 Optical devices featuring textured semiconductor layers

Publications (2)

Publication Number Publication Date
EP1952449A2 EP1952449A2 (en) 2008-08-06
EP1952449A4 true EP1952449A4 (en) 2011-06-29

Family

ID=38006465

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06827176A Withdrawn EP1952449A4 (en) 2005-10-31 2006-10-31 Optical devices featuring textured semiconductor layers

Country Status (5)

Country Link
EP (1) EP1952449A4 (en)
JP (1) JP2009515340A (en)
CN (1) CN101506937A (en)
CA (1) CA2627880A1 (en)
WO (1) WO2007053624A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2221856B1 (en) * 2007-11-21 2020-09-09 Mitsubishi Chemical Corporation Nitride semiconductor, nitride semiconductor crystal growth method, and nitride semiconductor light emitting element
WO2009075972A2 (en) * 2007-12-10 2009-06-18 3M Innovative Properties Company Down-converted light emitting diode with simplified light extraction
US8492737B2 (en) 2010-11-18 2013-07-23 The Arizona Board Of Regents On Behalf Of The University Of Arizona Tunable infrared emitter
TW201436263A (en) * 2013-01-25 2014-09-16 Corsam Technologies Llc Photovoltaic dual textured glass
CN103280504A (en) * 2013-05-14 2013-09-04 西安神光皓瑞光电科技有限公司 Method for improving efficiency of luminescent device
CN104253179A (en) * 2013-06-28 2014-12-31 晶能光电（江西）有限公司 GaN-based LED epitaxial film preparation method
CN103413876A (en) * 2013-08-09 2013-11-27 西安神光皓瑞光电科技有限公司 Luminescent device and preparation method thereof
JP6434878B2 (en) * 2015-09-10 2018-12-05 株式会社東芝 Light emitting device
JP6846913B2 (en) * 2016-11-11 2021-03-24 日本碍子株式会社 Method for manufacturing wide-wavelength light-emitting device and wide-wavelength light-emitting device
FR3068484B1 (en) 2017-06-29 2019-11-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives COLOR PROJECTOR WITH TWO EMISSIVE SCREENS.
CN113228309B (en) * 2019-11-26 2022-04-29 重庆康佳光电技术研究院有限公司 Light emitting diode structure
CN113140618B (en) * 2021-03-31 2023-02-10 福建中晶科技有限公司 Sapphire composite substrate and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050056850A1 (en) * 2003-09-17 2005-03-17 Toyoda Gosei Co., Ltd. GaN based semiconductor light emitting device and method of making the same
US20050082544A1 (en) * 2003-10-20 2005-04-21 Yukio Narukawa Nitride semiconductor device, and its fabrication process
US20050242364A1 (en) * 2004-04-15 2005-11-03 Moustakas Theodore D Optical devices featuring textured semiconductor layers

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
JP3424465B2 (en) * 1996-11-15 2003-07-07 日亜化学工業株式会社 Nitride semiconductor device and method of growing nitride semiconductor
JP3282174B2 (en) * 1997-01-29 2002-05-13 日亜化学工業株式会社 Nitride semiconductor light emitting device
EP0942459B1 (en) * 1997-04-11 2012-03-21 Nichia Corporation Method of growing nitride semiconductors
US6294440B1 (en) * 1998-04-10 2001-09-25 Sharp Kabushiki Kaisha Semiconductor substrate, light-emitting device, and method for producing the same
WO1999066565A1 (en) * 1998-06-18 1999-12-23 University Of Florida Method and apparatus for producing group-iii nitrides
US6252261B1 (en) * 1998-09-30 2001-06-26 Nec Corporation GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
JP3511923B2 (en) * 1998-12-25 2004-03-29 日亜化学工業株式会社 Light emitting element
JP3619053B2 (en) * 1999-05-21 2005-02-09 キヤノン株式会社 Method for manufacturing photoelectric conversion device
JP4145437B2 (en) * 1999-09-28 2008-09-03 住友電気工業株式会社 Single crystal GaN crystal growth method, single crystal GaN substrate manufacturing method, and single crystal GaN substrate
JP3725382B2 (en) * 1999-11-11 2005-12-07 株式会社東芝 Semiconductor device manufacturing method and semiconductor light emitting device manufacturing method
JP4197814B2 (en) * 1999-11-12 2008-12-17 シャープ株式会社 LED driving method, LED device and display device
JP4055503B2 (en) * 2001-07-24 2008-03-05 日亜化学工業株式会社 Semiconductor light emitting device
JP4158519B2 (en) * 2002-12-26 2008-10-01 住友電気工業株式会社 White light emitting device and method for manufacturing the same
JP4397394B2 (en) * 2003-01-24 2010-01-13 ディジタル・オプティクス・インターナショナル・コーポレイション High density lighting system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050056850A1 (en) * 2003-09-17 2005-03-17 Toyoda Gosei Co., Ltd. GaN based semiconductor light emitting device and method of making the same
US20050082544A1 (en) * 2003-10-20 2005-04-21 Yukio Narukawa Nitride semiconductor device, and its fabrication process
US20050242364A1 (en) * 2004-04-15 2005-11-03 Moustakas Theodore D Optical devices featuring textured semiconductor layers

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
BHATTACHARYYA A ET AL: "Comparative study of GaN/AlGaN MQWs grown homoepitaxially on (1100) and (0001) GaN", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 251, no. 1-4, 1 April 2003 (2003-04-01), pages 487 - 493, XP004416295, ISSN: 0022-0248, DOI: 10.1016/S0022-0248(02)02433-8 *
CABALU J S ET AL: "Nitride LEDs based on flat and "wrinkled" quantum wells", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING SPIE-INT. SOC. OPT. ENG. USA, vol. 5732, no. 1, 25 March 2005 (2005-03-25), pages 185 - 196, XP002635688, ISSN: 0277-786X, DOI: 10.1117/12.588360 *
See also references of WO2007053624A2 *

Also Published As

Publication number Publication date
EP1952449A2 (en) 2008-08-06
WO2007053624A2 (en) 2007-05-10
CN101506937A (en) 2009-08-12
WO2007053624A3 (en) 2009-04-30
CA2627880A1 (en) 2007-05-10
JP2009515340A (en) 2009-04-09

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Inventor name: CABALU, JASPER S.

Inventor name: MOUSTAKAS, THEODORE, D.

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Ipc: H01L 33/00 20060101ALI20090617BHEP

Ipc: H01L 21/00 20060101AFI20090617BHEP

RIN1 Information on inventor provided before grant (corrected)

Inventor name: CABALU, JASPER S.

Inventor name: MOUSTAKAS, THEODORE, D.

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/32 20100101ALN20110518BHEP

Ipc: H01L 33/08 20100101ALN20110518BHEP

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