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EP1952449A4 - Optical devices featuring textured semiconductor layers - Google Patents

Optical devices featuring textured semiconductor layers

Info

Publication number
EP1952449A4
EP1952449A4 EP06827176A EP06827176A EP1952449A4 EP 1952449 A4 EP1952449 A4 EP 1952449A4 EP 06827176 A EP06827176 A EP 06827176A EP 06827176 A EP06827176 A EP 06827176A EP 1952449 A4 EP1952449 A4 EP 1952449A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor layers
optical devices
devices featuring
textured semiconductor
featuring textured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06827176A
Other languages
German (de)
French (fr)
Other versions
EP1952449A2 (en
Inventor
Theodore D Moustakas
Jasper S Cabalu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boston University
Original Assignee
Boston University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US73203405P priority Critical
Application filed by Boston University filed Critical Boston University
Priority to PCT/US2006/042483 priority patent/WO2007053624A2/en
Publication of EP1952449A2 publication Critical patent/EP1952449A2/en
Publication of EP1952449A4 publication Critical patent/EP1952449A4/en
Application status is Withdrawn legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/02428Structure
    • H01L21/0243Surface structure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/02433Crystal orientation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02455Group 13/15 materials
    • H01L21/02458Nitrides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02494Structure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/0254Nitrides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
EP06827176A 2005-10-31 2006-10-31 Optical devices featuring textured semiconductor layers Withdrawn EP1952449A4 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US73203405P true 2005-10-31 2005-10-31
PCT/US2006/042483 WO2007053624A2 (en) 2005-10-31 2006-10-31 Optical devices featuring textured semiconductor layers

Publications (2)

Publication Number Publication Date
EP1952449A2 EP1952449A2 (en) 2008-08-06
EP1952449A4 true EP1952449A4 (en) 2011-06-29

Family

ID=38006465

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06827176A Withdrawn EP1952449A4 (en) 2005-10-31 2006-10-31 Optical devices featuring textured semiconductor layers

Country Status (5)

Country Link
EP (1) EP1952449A4 (en)
JP (1) JP2009515340A (en)
CN (1) CN101506937A (en)
CA (1) CA2627880A1 (en)
WO (1) WO2007053624A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009066466A1 (en) * 2007-11-21 2009-05-28 Mitsubishi Chemical Corporation Nitride semiconductor, nitride semiconductor crystal growth method, and nitride semiconductor light emitting element
JP2011507272A (en) * 2007-12-10 2011-03-03 スリーエム イノベイティブ プロパティズ カンパニー Down-converting light-emitting diode having a simple optical extraction method
US8492737B2 (en) 2010-11-18 2013-07-23 The Arizona Board Of Regents On Behalf Of The University Of Arizona Tunable infrared emitter
TW201436263A (en) * 2013-01-25 2014-09-16 Corsam Technologies Llc Photovoltaic dual textured glass
CN103280504A (en) * 2013-05-14 2013-09-04 西安神光皓瑞光电科技有限公司 Method for improving efficiency of luminescent device
CN104253179A (en) * 2013-06-28 2014-12-31 晶能光电(江西)有限公司 GaN-based LED epitaxial film preparation method
CN103413876A (en) * 2013-08-09 2013-11-27 西安神光皓瑞光电科技有限公司 Luminescent device and preparation method thereof
JP6434878B2 (en) * 2015-09-10 2018-12-05 株式会社東芝 The light-emitting device
WO2019002757A1 (en) * 2017-06-29 2019-01-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Colour projector with two emissive displays

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050056850A1 (en) * 2003-09-17 2005-03-17 Toyoda Gosei Co., Ltd. GaN based semiconductor light emitting device and method of making the same
US20050082544A1 (en) * 2003-10-20 2005-04-21 Yukio Narukawa Nitride semiconductor device, and its fabrication process
US20050242364A1 (en) * 2004-04-15 2005-11-03 Moustakas Theodore D Optical devices featuring textured semiconductor layers

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3424465B2 (en) * 1996-11-15 2003-07-07 日亜化学工業株式会社 The method of growing a nitride semiconductor device and a nitride semiconductor
JP3282174B2 (en) * 1997-01-29 2002-05-13 日亜化学工業株式会社 The nitride semiconductor light emitting device
US6153010A (en) * 1997-04-11 2000-11-28 Nichia Chemical Industries Ltd. Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device
US6294440B1 (en) * 1998-04-10 2001-09-25 Sharp Kabushiki Kaisha Semiconductor substrate, light-emitting device, and method for producing the same
US6218280B1 (en) * 1998-06-18 2001-04-17 University Of Florida Method and apparatus for producing group-III nitrides
US6252261B1 (en) * 1998-09-30 2001-06-26 Nec Corporation GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
JP3511923B2 (en) * 1998-12-25 2004-03-29 日亜化学工業株式会社 The light-emitting element
JP3619053B2 (en) * 1999-05-21 2005-02-09 キヤノン株式会社 Method of manufacturing a photoelectric conversion device
JP4145437B2 (en) * 1999-09-28 2008-09-03 住友電気工業株式会社 Method for producing a crystalline growth method and the single-crystal GaN substrate of single-crystal GaN and GaN single crystal
JP3725382B2 (en) * 1999-11-11 2005-12-07 株式会社東芝 Method of manufacturing a manufacturing method and a semiconductor light emitting element of the semiconductor element
JP4197814B2 (en) * 1999-11-12 2008-12-17 シャープ株式会社 Led driving method and led device and a display device
JP4055503B2 (en) * 2001-07-24 2008-03-05 日亜化学工業株式会社 Semiconductor light-emitting element
JP4158519B2 (en) * 2002-12-26 2008-10-01 住友電気工業株式会社 White light emitting device and manufacturing method thereof
US6871982B2 (en) * 2003-01-24 2005-03-29 Digital Optics International Corporation High-density illumination system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050056850A1 (en) * 2003-09-17 2005-03-17 Toyoda Gosei Co., Ltd. GaN based semiconductor light emitting device and method of making the same
US20050082544A1 (en) * 2003-10-20 2005-04-21 Yukio Narukawa Nitride semiconductor device, and its fabrication process
US20050242364A1 (en) * 2004-04-15 2005-11-03 Moustakas Theodore D Optical devices featuring textured semiconductor layers

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
BHATTACHARYYA A ET AL: "Comparative study of GaN/AlGaN MQWs grown homoepitaxially on (1100) and (0001) GaN", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 251, no. 1-4, 1 April 2003 (2003-04-01), pages 487 - 493, XP004416295, ISSN: 0022-0248, DOI: DOI:10.1016/S0022-0248(02)02433-8 *
CABALU J S ET AL: "Nitride LEDs based on flat and "wrinkled" quantum wells", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING SPIE-INT. SOC. OPT. ENG. USA, vol. 5732, no. 1, 25 March 2005 (2005-03-25), pages 185 - 196, XP002635688, ISSN: 0277-786X, DOI: 10.1117/12.588360 *
See also references of WO2007053624A2 *

Also Published As

Publication number Publication date
WO2007053624A2 (en) 2007-05-10
JP2009515340A (en) 2009-04-09
WO2007053624A3 (en) 2009-04-30
CA2627880A1 (en) 2007-05-10
CN101506937A (en) 2009-08-12
EP1952449A2 (en) 2008-08-06

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Legal Events

Date Code Title Description
17P Request for examination filed

Effective date: 20080530

AK Designated contracting states:

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

AX Request for extension of the european patent to

Countries concerned: ALBAHRMKRS

R17D Search report (correction)

Effective date: 20090430

RIN1 Inventor (correction)

Inventor name: MOUSTAKAS, THEODORE, D.

Inventor name: CABALU, JASPER S.

RIC1 Classification (correction)

Ipc: H01L 21/00 20060101AFI20090617BHEP

Ipc: H01L 33/00 20060101ALI20090617BHEP

RIN1 Inventor (correction)

Inventor name: CABALU, JASPER S.

Inventor name: MOUSTAKAS, THEODORE, D.

RIC1 Classification (correction)

Ipc: H01L 33/08 20100101ALN20110518BHEP

Ipc: H01L 33/32 20100101ALN20110518BHEP

Ipc: H01L 33/24 20100101ALI20110518BHEP

Ipc: H01L 21/00 20060101AFI20090617BHEP

Ipc: H01L 33/06 20100101ALI20110518BHEP

A4 Despatch of supplementary search report

Effective date: 20110527

18D Deemed to be withdrawn

Effective date: 20110503